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Device applications of epitaxial graphene on silicon carbide
Bulgarian Academic Science, Bulgaria.
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.ORCID iD: 0000-0002-2837-3656
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
2016 (English)In: Vacuum, ISSN 0042-207X, E-ISSN 1879-2715, Vol. 128, 186-197 p.Article, review/survey (Refereed) PublishedText
Abstract [en]

Graphene has become an extremely hot topic due to its intriguing material properties allowing for ground-breaking fundamental research and applications. It is one of the fastest developing materials during the last several years. This progress is also driven by the diversity of fabrication methods for graphene of different specific properties, size, quantity and cost. Graphene grown on SiC is of particular interest due to the possibility to avoid transferring of free standing graphene to a desired substrate while having a large area SiC (semi-insulating or conducting) substrate ready for device processing. Here, we present a review of the major current explorations of graphene on SiC in electronic devices, such as field effect transistors (FET), radio frequency (RF) transistors, integrated circuits (IC), and sensors. The successful role of graphene in the metrology sector is also addressed. Typical examples of graphene on SiC implementations are illustrated and the drawbacks and promises are critically analyzed. (C) 2016 Elsevier Ltd. All rights reserved.

Place, publisher, year, edition, pages
PERGAMON-ELSEVIER SCIENCE LTD , 2016. Vol. 128, 186-197 p.
Keyword [en]
Graphene FET; RF-transistors; IC; Graphene sensors; Detectors; Quantum Hall resistance
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:liu:diva-129150DOI: 10.1016/j.vacuum.2016.03.027ISI: 000376052500026OAI: oai:DiVA.org:liu-129150DiVA: diva2:936056
Note

Funding Agencies|European Union [604391]; Swedish Research Council [VR 621-2014-5805]; LiU Linnaeus Grant

Available from: 2016-06-13 Created: 2016-06-13 Last updated: 2016-08-31

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The full text will be freely available from 2018-06-30 11:35
Available from 2018-06-30 11:35

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Hultman, LarsYakimova, Rositsa
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