liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Epitaxial Graphene on SiC: A Review of Growth and Characterization
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
2016 (English)In: Crystals, ISSN 2073-4352, Vol. 6, no 5, 53Article, review/survey (Refereed) Published
Resource type
Text
Abstract [en]

This review is devoted to one of the most promising two-dimensional (2D) materials, graphene. Graphene can be prepared by different methods and the one discussed here is fabricated by the thermal decomposition of SiC. The aim of the paper is to overview the fabrication aspects, growth mechanisms, and structural and electronic properties of graphene on SiC and the means of their assessment. Starting from historical aspects, it is shown that the most optimal conditions resulting in a large area of one ML graphene comprise high temperature and argon ambience, which allow better controllability and reproducibility of the graphene quality. Elemental intercalation as a means to overcome the problem of substrate influence on graphene carrier mobility has been described. The most common characterization techniques used are low-energy electron microscopy (LEEM), angle-resolved photoelectron spectroscopy (ARPES), Raman spectroscopy, atomic force microscopy (AFM) in different modes, Hall measurements, etc. The main results point to the applicability of graphene on SiC in quantum metrology, and the understanding of new physics and growth phenomena of 2D materials and devices.

Place, publisher, year, edition, pages
MDPI AG , 2016. Vol. 6, no 5, 53
Keyword [en]
graphene; epitaxial; SiC; sublimation
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-129674DOI: 10.3390/cryst6050053ISI: 000377262000006OAI: oai:DiVA.org:liu-129674DiVA: diva2:943123
Note

Funding Agencies|European Union Seventh Framework Program [604391]; Swedish Research Council [VR 621-2014-5805]; SSF; KAW funding

Available from: 2016-06-27 Created: 2016-06-23 Last updated: 2017-11-28

Open Access in DiVA

fulltext(23138 kB)2814 downloads
File information
File name FULLTEXT01.pdfFile size 23138 kBChecksum SHA-512
f4f06e57c80d70740b559f84e0e41dda002ac10e5a40a4aa93e144a06db0f06818d019e0f6d78b444aa007c3cf687112d1c8bf24205f6d3d689f0d29b4825333
Type fulltextMimetype application/pdf

Other links

Publisher's full text

Authority records BETA

Yazdi, GholamrezaIakimov, TihomirYakimova, Rositsa

Search in DiVA

By author/editor
Yazdi, GholamrezaIakimov, TihomirYakimova, Rositsa
By organisation
Semiconductor MaterialsFaculty of Science & Engineering
In the same journal
Crystals
Condensed Matter Physics

Search outside of DiVA

GoogleGoogle Scholar
Total: 2814 downloads
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 133 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf