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Ti2AlN thin films synthesized by annealing of (Ti plus Al)/AlN multilayers
University of Poitiers, France.
University of Poitiers, France.
University of Poitiers, France.
University of Poitiers, France.
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2016 (English)In: Materials research bulletin, ISSN 0025-5408, E-ISSN 1873-4227, Vol. 80, 58-63 p.Article in journal (Refereed) PublishedText
Abstract [en]

Single-phase Ti2AlN thin films were obtained by annealing in vacuum of (Ti + Al)/AIN multilayers deposited at room temperature by magnetron sputtering onto single-crystalline (0001) 4H-SiC and (0001) Al2O3 substrates. In-situ X-ray diffraction experiments combined with ex-situ cross-sectional transmission electron microscopy observations reveal that interdiffusion processes occur in the multilayer at a temperature of similar to 400 degrees C leading to the formation of a (Ti, Al, N) solid solution, having the hexagonal structure of alpha-Ti, whereas the formation of Ti2AlN occurs at 550-600 degrees C. Highly oriented (0002) Ti2AlN thin films can be obtained after an annealing at 750 degrees C. (C) 2016 Elsevier Ltd. All rights reserved.

Place, publisher, year, edition, pages
PERGAMON-ELSEVIER SCIENCE LTD , 2016. Vol. 80, 58-63 p.
Keyword [en]
Annealing; MAX phases; Thin films; Multilayer
National Category
Inorganic Chemistry
URN: urn:nbn:se:liu:diva-130056DOI: 10.1016/j.materresbull.2016.03.031ISI: 000377230900008OAI: diva2:947039

Funding Agencies|University of Poitiers; European Research Council under the European Communitys Seventh Framework Programme/ERC [335383]; Swedish Foundation for Strategic Research through the Future Leaders 5 program

Available from: 2016-07-06 Created: 2016-07-06 Last updated: 2016-08-20

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Eklund, Per
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Thin Film PhysicsFaculty of Science & Engineering
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