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Comments on a peak of AlxGa1-xN observed by infrared reflectance
NMMU, South Africa.
NMMU, South Africa.
NMMU, South Africa.
NMMU, South Africa.
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2016 (English)In: Infrared physics & technology, ISSN 1350-4495, E-ISSN 1879-0275, Vol. 76, 493-499 p.Article in journal (Refereed) PublishedText
Abstract [en]

AlxGa1-xN epilayers, grown on c-plane oriented sapphire substrates by metal organic chemical vapour deposition (MOCVD), were evaluated using FTIR infrared reflectance spectroscopy. A peak at similar to 850 cm(-1) in the reflectance spectra, not reported before, was observed. Possible origins for this peak are considered and discussed. (C) 2016 Elsevier B.V. All rights reserved.

Place, publisher, year, edition, pages
ELSEVIER SCIENCE BV , 2016. Vol. 76, 493-499 p.
Keyword [en]
AlxGa1-xN; Infrared reflectance; Unassigned peak origin
National Category
Condensed Matter Physics
URN: urn:nbn:se:liu:diva-130141DOI: 10.1016/j.infrared.2016.03.024ISI: 000377725100059OAI: diva2:948556

Funding Agencies|National Research Foundation, South Africa

Available from: 2016-07-12 Created: 2016-07-11 Last updated: 2016-07-12

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Henry, Anne
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Thin Film PhysicsFaculty of Science & Engineering
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