Band structure engineering in organic semiconductors
2016 (English)In: Science, ISSN 0036-8075, E-ISSN 1095-9203, Vol. 352, no 6292, 1446-1449 p.Article in journal (Refereed) PublishedText
A key breakthrough in modern electronics was the introduction of band structure engineering, the design of almost arbitrary electronic potential structures by alloying different semiconductors to continuously tune the band gap and band-edge energies. Implementation of this approach in organic semiconductors has been hindered by strong localization of the electronic states in these materials. We show that the influence of so far largely ignored long-range Coulomb interactions provides a workaround. Photoelectron spectroscopy confirms that the ionization energies of crystalline organic semiconductors can be continuously tuned over a wide range by blending them with their halogenated derivatives. Correspondingly, the photovoltaic gap and open-circuit voltage of organic solar cells can be continuously tuned by the blending ratio of these donors.
Place, publisher, year, edition, pages
AMER ASSOC ADVANCEMENT SCIENCE , 2016. Vol. 352, no 6292, 1446-1449 p.
Condensed Matter Physics
IdentifiersURN: urn:nbn:se:liu:diva-130126DOI: 10.1126/science.aaf0590ISI: 000377975400045PubMedID: 27313043OAI: oai:DiVA.org:liu-130126DiVA: diva2:948591
Funding Agencies|DFG [LE-747/44-1]; European Communitys Seventh Framework Programme [EP7-267995]; Knut and Alice Wallenberg Foundation through a Wallenberg Scholar grant; Swedish Research Council (VR) [330-2014-6433]; European Commission, Made Sklodowska-Curie Actions [INCA 600398]; Bundesministerium fur Bildung und Forschung [FKZ 03EK3503B]; Dr Isolde-Dietrich-Stiftung2016-07-122016-07-112016-07-12