Properties of ScxAl1-xN (x=0.27) thin films on sapphire and silicon substrates upon high temperature loading
2016 (English)In: Microsystem Technologies: Micro- and Nanosystems Information Storage and Processing Systems, ISSN 0946-7076, E-ISSN 1432-1858, Vol. 22, no 7, 1679-1689 p.Article in journal (Refereed) PublishedText
Scandium Aluminum Nitride thin films (ScxAl1-xN) are attracting more and more attention for micro-electromechanical systems (MEMS) because of significantly increased piezoelectric constants compared to pure AlN. This work provides a comprehensive study of thermal annealing effects on ScxAl1-xN (x = 27 %) films synthesized via DC magnetron sputter deposition at nominally unheated Silicon and Sapphire substrates. Compared to the "as deposited" state increasing c-axis orientation and crystalline quality upon annealing up to 1000 A degrees C of films with mixed crystallographic orientation is observed via X-ray diffraction and transmission electron microscopy based analyses. Also the piezoelectric coefficient d (33) of ScxAl1-xN on Si shows increasing values at enhanced annealing temperatures. However, the improved piezoelectric properties are accompanied by both increased leakage currents and loss tangent values.
Place, publisher, year, edition, pages
SPRINGER , 2016. Vol. 22, no 7, 1679-1689 p.
IdentifiersURN: urn:nbn:se:liu:diva-130409DOI: 10.1007/s00542-015-2798-7ISI: 000379331500019OAI: oai:DiVA.org:liu-130409DiVA: diva2:952662
SPIE EUROPE Symposium on Microtechnologies