Spin transport in epitaxial graphene on the C-terminated (000(1)over-bar)-face of silicon carbide
2016 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 109, no 1, 012402- p.Article in journal (Refereed) PublishedText
We performed a temperature dependent study of the charge and spin transport properties of epitaxial graphene on the C-terminated (000 (1) over bar) face of silicon carbide (SiC), a system without a carbon buffer layer between the graphene and the SiC. Using spin Hanle precession in the nonlocal geometry, we measured a spin relaxation length of lambda(S) = 0.7 lm at room temperature, lower than in exfoliated graphene. We show that the charge and spin diffusion coefficient, D-C and D-S, respectively, increasingly deviate from each other during electrical measurements up to a difference of a factor 4. Thus, we show that a model of localized states that was previously used to explain D-C not equal D-S, can also be applied to epitaxial graphene systems without a carbon buffer layer. We attribute the effect to charge trap states in the interface between the graphene and the SiC. Published by AIP Publishing.
Place, publisher, year, edition, pages
AMER INST PHYSICS , 2016. Vol. 109, no 1, 012402- p.
Condensed Matter Physics
IdentifiersURN: urn:nbn:se:liu:diva-130389DOI: 10.1063/1.4955017ISI: 000379587000019OAI: oai:DiVA.org:liu-130389DiVA: diva2:952727
Funding Agencies|NanoNed; Zernike Institute for Advanced Materials; EU FP7 project "ConceptGraphene" ; EU FP7 project "Graphene Flagship" 2016-08-152016-08-052016-08-15