SIC epitaxial growth on large area substrates: history and evolution
2012 (English)In: Silicon carbide epitaxy / [ed] Francesco La Via, Kerala, Indien: Research Signpost , 2012, 1-25 p.Chapter in book (Refereed)
In the past decades, the commercial requirements have steered the development of SiC materials to increasing perfection in quality, size, uniformity, and reproducibility. It has indeed been intense and captivating and we have yet to see the end of this development. This brief review gives a short historic background trying to highlight the main technological achievements which have advanced the technology to the point where we stand today. The need for a high throughput has made the development of multi-wafer reactors particularly fascinating. Today there are warm-wall reactors with a capacity of 10 x 100 mm and dual chamber hot-wall reactors with a capacity of 7 x 100 mm and with auto-loading capability. The growth rate increase seen in the past decade has lead to an interesting situation as it is no longer the growth rate that limits the throughput but rather the heat- and cooldown times. At the end of this chapter a brief outlook for the future is also given.
Place, publisher, year, edition, pages
Kerala, Indien: Research Signpost , 2012. 1-25 p.
Condensed Matter Physics
IdentifiersURN: urn:nbn:se:liu:diva-130634ISBN: 9788130805009OAI: oai:DiVA.org:liu-130634DiVA: diva2:953949