ZrB2 thin films deposited on GaN(0001) by magnetron sputtering from a ZrB2 target
2016 (English)In: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 453, 71-76 p.Article in journal (Refereed) PublishedText
ZrB2 films were deposited on 900 °C-preheated or non-preheated GaN(0001) surfaces by direct current magnetron sputtering from a compound target. Analytical transmission electron microscopy and scanning transmission electron microscopy with energy dispersive X-ray spectroscopy and electron energy loss spectroscopy revealed a 0001 fiber textured ZrB2 film growth following the formation of a ~2 nm thick amorphous BN layer onto the GaN(0001) at a substrate temperature of 900 °C. The amorphous BN layer remains when the substrate temperature is lowered to 500 °C or when the preheating step is removed from the process and results in the growth of polycrystalline ZrB2 films. The ZrB2 growth phenomena on GaN(0001) is compared to on 4H-SiC(0001), Si(111), and Al2O3(0001) substrates, which yield epitaxial film growth. The decomposition of the GaN surface during vacuum processing during BN interfacial layer formation is found to impede epitaxial growth of ZrB2.
Place, publisher, year, edition, pages
Elsevier, 2016. Vol. 453, 71-76 p.
A1. X-ray diffraction; A1. Interfaces; A1. Energy-dispersive X-ray spectroscopy; A1. Electron energy loss spectroscopy; A3. Physical vapor deposition processes; B1. Borides
IdentifiersURN: urn:nbn:se:liu:diva-130920DOI: 10.1016/j.jcrysgro.2016.08.011OAI: oai:DiVA.org:liu-130920DiVA: diva2:956682