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Ga2O3 Schottky Barrier Diodes with n(-)-Ga2O3 Drift Layers Grown by HVPE
National Institute Informat and Commun Technology, Japan.
National Institute Informat and Commun Technology, Japan; Tamura Corp, Japan.
Tamura Corp, Japan.
Tokyo University of Agriculture and Technology, Japan.
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2015 (English)In: 2015 73RD ANNUAL DEVICE RESEARCH CONFERENCE (DRC), IEEE , 2015, 29-30 p.Conference paper, Published paper (Refereed)
Abstract [en]

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Place, publisher, year, edition, pages
IEEE , 2015. 29-30 p.
National Category
Chemical Sciences
Identifiers
URN: urn:nbn:se:liu:diva-131219DOI: 10.1109/DRC.2015.7175536ISI: 000380440500006ISBN: 978-1-4673-8135-2 (print)OAI: oai:DiVA.org:liu-131219DiVA: diva2:971789
Conference
2015 73rd Annual Device Research Conference (DRC)
Available from: 2016-09-19 Created: 2016-09-12 Last updated: 2016-09-19

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CiteExportLink to record
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Citation style
  • apa
  • harvard1
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  • modern-language-association-8th-edition
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