Nonequilibrium drift-diffusion model for organic semiconductor devices
2016 (English)In: PHYSICAL REVIEW B, ISSN 2469-9950 (print); 2469-9969 (online), Vol. 94, no 3, 035205Article in journal (Refereed) Published
Two prevailing formalisms are currently used to model charge transport in organic semiconductor devices. Drift-diffusion calculations, on the one hand, are time effective but assume local thermodynamic equilibrium, which is not always realistic. Kinetic Monte Carlo models, on the other hand, do not require this assumption but are computationally expensive. Here, we present a nonequilibrium drift-diffusion model that bridges this gap by fusing the established multiple trap and release formalism with the drift-diffusion transport equation. For a prototypical photovoltaic system the model is shown to quantitatively describe, with a single set of parameters, experiments probing (1) temperature-dependent steady-state charge transport-space-charge limited currents, and (2) time-resolved charge transport and relaxation of nonequilibrated photocreated charges. Moreover, the outputs of the developed kinetic drift-diffusion model are an order of magnitude, or more, faster to compute and in good agreement with kinetic Monte Carlo calculations.
Place, publisher, year, edition, pages
AMER PHYSICAL SOC , 2016. Vol. 94, no 3, 035205
Other Physics Topics
IdentifiersURN: urn:nbn:se:liu:diva-131516DOI: 10.1103/PhysRevB.94.035205ISI: 000381482700003OAI: oai:DiVA.org:liu-131516DiVA: diva2:974402