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Electronic structure of GaN and Ga investigated by soft x-ray spectroscopy and first-principles methods
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.ORCID iD: 0000-0002-0317-0190
Universidad Complutense de Madrid.
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
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2010 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 81, p. 085125-Article in journal (Refereed) Published
Abstract [en]

The electronic structure and chemical bonding of wurtzite-GaN investigated by N 1s soft x-ray absorption spectroscopy and N K, Ga M1, and Ga M2,3 emission spectroscopy is compared to that of pure Ga. The measurements are interpreted by calculated spectra using first-principles density-functional theory (DFT) including dipole transition matrix elements and additional on-site Coulomb interaction (WC-GGA+U). The Ga 4p-N 2p and Ga 4s-N 2p hybridization and chemical bond regions are identified at the top of the valence band between −1.0 and −2.0 and further down between −5.5 and −6.5 eV, respectively. In addition, N 2s-N 2p-Ga 4s and N 2s-N 2p-Ga 3d hybridization regions occur at the bottom of the valence band between −13 and −15 eV, and between −17.0 and −18.0 eV, respectively. A bandlike satellite feature is also found around −10 eV in the Ga M1 and Ga M2,3 emission from GaN, but is absent in pure Ga and the calculated ground-state spectra. The difference between the identified spectroscopic features of GaN and Ga are discussed in relation to the various hybridization regions calculated within band-structure methods.

Place, publisher, year, edition, pages
2010. Vol. 81, p. 085125-
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-54428DOI: 10.1103/PhysRevB.81.085125ISI: 000275053300052OAI: oai:DiVA.org:liu-54428DiVA, id: diva2:303719
Note

Original Publication: Martin Magnuson, Maurizio Mattesini, Carina Höglund, Jens Birch and Lars Hultman, Electronic structure of GaN and Ga investigated by soft x-ray spectroscopy and first-principles methods, 2010, Physical Review B. Condensed Matter and Materials Physics, (81), 085125. http://dx.doi.org/10.1103/PhysRevB.81.085125 Copyright: American Physical Society http://www.aps.org/

Available from: 2010-03-15 Created: 2010-03-15 Last updated: 2018-06-04

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Magnuson, MartinHöglund, CarinaBirch, JensHultman, Lars

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