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  • 1.
    Broitman, Esteban
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
    Hultman, Lars
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
    Adhesion improvement of carbon-based coatings through a high ionization deposition technique2012Ingår i: Journal of Physics, Conference Series, ISSN 1742-6588, E-ISSN 1742-6596, Vol. 370, nr 012009Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    The deposition of highly adherent carbon nitride (CNx) films using a pretreatment with two high power impulse magnetron sputtering (HIPIMS) power supplies in a master-slave configuration is reviewed. SKF3 (AISI 52100) steel substrates were pretreated in the environment of a high ionized Cr+Ar plasma in order to sputter clean the surface and implant Cr metal ions. CNx films were subsequently deposited at room temperature by DC magnetron sputtering from a high purity C target in a N-2/Ar plasma discharge. All processing was done in an industrial-scale CemeCon CC800 coating system. A series of depositions were obtained with samples pretreated at different bias voltages (DC and pulsed). The adhesion of CNx films, evaluated by the Daimler-Benz Rockwell-C test, reaches strength quality HF1. Adhesion results are correlated to high resolution transmission electron microscopy observations confirming the formation of an optimal interfacial mixing layer of Cr and steel. The throwing power increase for HIPIMS coatings is associated to the higher ionization in the plasma discharge.

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    adhesion
  • 2.
    Hammarström, Per
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Biokemi. Linköpings universitet, Tekniska högskolan.
    Ali Malik, Muhammad
    Linköpings universitet, Institutionen för fysik, kemi och biologi. Linköpings universitet, Tekniska högskolan.
    Mishra, Rajesh
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Biokemi. Linköpings universitet, Tekniska högskolan.
    Svensson, Samuel
    Linköpings universitet, Institutionen för medicin och hälsa, Farmakologi. Linköpings universitet, Hälsouniversitetet.
    Tengvall, Pentti
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tillämpad Fysik. Linköpings universitet, Tekniska högskolan.
    Lundström, Ingemar
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tillämpad Fysik. Linköpings universitet, Tekniska högskolan.
    A catalytic surface for amyloid fibril formation2008Ingår i: Journal of Physics, Conference Series, ISSN 1742-6588, E-ISSN 1742-6596, Vol. 100Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    A hydrophobic surface incubated in a solution of protein molecules (insulin monomers) was made into a catalytic surface for amyloid fibril formation by repeatedly incubate, rinse and dry the surface. The present contribution describes how this unexpected transformation occurred and its relation to rapid fibrillation of insulin solutions in contact with the surface. A tentative model of the properties of the catalytic surface is given, corroborated by ellipsometric measurements of the thickness of the organic layer on the surface and by atomic force microscopy. The surfaces used were spontaneously oxidized silicon made hydrophobic through treatment in dichlorodimethylsilane.

  • 3.
    Herberthson, Magnus
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Matematiska institutionen, Tillämpad matematik.
    Bounds for, and calculation of, the multipole moments of stationary spacetimes2007Ingår i: Journal of Physics, Conference Series, ISSN 1742-6588, E-ISSN 1742-6596, Vol. 66, nr 1Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    The multipole moments of stationary asymptotically flat spacetimes are considered. We demostrate how the tensorial recursion of Geroch and Hansen can be replaced by a scalar recursion on R2. We also give a bound on multipole moments. This confirms the "necessary part" of a long standing conjecture due to Geroch. © 2007 IOP Publishing Ltd.

  • 4.
    Herberthson, Magnus
    Linköpings universitet, Matematiska institutionen, Tillämpad matematik. Linköpings universitet, Tekniska högskolan.
    Static vacuum spacetimes with prescribed multipole moments2010Ingår i: Journal of Physics, Conference Series, ISSN 1742-6588, E-ISSN 1742-6596, ISSN 1742-6588, Vol. 229Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    This paper gives sufficient conditions on a sequence of multipole moments for a static spacetime to exist with precisely these moments. We outline the proof, which is constructive in the sense that a metric having prescribed multipole moments up to a given order can be calculated. These sufficient conditions agree with already known necessary conditions, and hence this completes the proof of a long standing conjecture due to Geroch

  • 5.
    Karim, Amir
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi. Linköpings universitet, Tekniska högskolan.
    Hansson, Göran V.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Yt- och Halvledarfysik. Linköpings universitet, Tekniska högskolan.
    Linnarsson, M. K.
    Lab of Materials and Semiconductor Physics, Royal Institute of Technology, Stockholm, Sweden.
    Influence of Er and O concentrations on the microstructure and luminescence of Si:Er/O LEDs2008Ingår i: Journal of Physics, Conference Series, ISSN 1742-6588, E-ISSN 1742-6596, Vol. 100, nr 042010Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Erbium(Er)/Oxygen(O) doped Silicon (Si) layers grown by molecular beam epitaxy (MBE), can be used for fabricating Si-based light emitting diodes. The electroluminescence intensity from these layers depends sensitively on the formation of specific types of Er/O precipitates inside the Si host. We have performed a detailed microstructure analysis of MBE-grown Er/O doped Si layers using electron microscopy and combined it with secondary ion mass spectrometry (SIMS) measurements as well as electroluminescence studies. Two types of microstructures are observed in different samples with specific Er and O concentrations and grown using Er and Si co-evaporation in O ambient. The first type of microstructure consists of planar precipitates along (311) planes mostly initiated at the onset of the growth of the Si:Er/O layer. The second characteristic type of microstructure observed contain round precipitates of Er/O. Using analytical microscopy techniques it was revealed that the round precipitates contain a higher ratio of Er to O as compared to the planar precipitates of the first type. The planar precipitates normally result in structures with high electroluminescence intensity while the structures with round precipitates have low intensity.

  • 6.
    Lenz, Annika
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Fysikalisk Kemi. Linköpings universitet, Tekniska högskolan.
    Karlsson, Maria
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Fysikalisk Kemi. Linköpings universitet, Tekniska högskolan.
    Ojamäe, Lars
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Fysikalisk Kemi. Linköpings universitet, Tekniska högskolan.
    Quantum-chemical investigations of phenol and larger aromatic molecules at the TiO2 anatase (101) surface2008Ingår i: Journal of Physics, Conference Series, ISSN 1742-6588, E-ISSN 1742-6596, Vol. 117, s. 012020-(8 pp)Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Adsorption of aromatic molecules at the (101) surface of titanium dioxide anatase is studied by quantum-chemical B3LYP computations, where both cluster and periodic calculations were performed and compared. For phenol different adsorption modes at a TiO2 cluster were mapped out and the energetically most favourable conformation was used for investigation of the electronic structure, for periodic calculations, and as a mould for the adsorption modes of phenylmethanol, phenylethanol, naphthalen-2-ol, phenanthren-2-ol, pyren-2-ol and perylen-2-ol. The alcohols form a H-bond to a surface O and a O(molecule)-Ti bond. For the larger aromatic molecules their increasingly higher HOMO levels decrease the effective bad gap of the system. Inclusion of spacer groups as in phenylmethanol and phenylethanol results in higher adsorption energies and larger band gaps. The LUMOs for the adsorbates help visualize the electronic coupling to the surface. Comparison of the cluster with the periodic model indicates that the former describes the electronic coupling in a similar manner as the latter, although the former lacks in the description of the anatase substrate.

  • 7.
    Lindgren, D
    et al.
    Lund University, Solid State Physics and the Nanometer Structure Consortium, Sweden.
    Heurlin, M
    Lund University, Solid State Physics and the Nanometer Structure Consortium, Sweden.
    Kawaguchi, K
    Lund University, Solid State Physics and the Nanometer Structure Consortium, Sweden.
    Borgström, M T
    Lund University, Solid State Physics and the Nanometer Structure Consortium, Sweden.
    Pistol, M-E
    Lund University, Solid State Physics and the Nanometer Structure Consortium, Sweden.
    Monemar, Bo
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska högskolan. Lund University, Sweden.
    Samuelson, L
    Lund University, Solid State Physics and the Nanometer Structure Consortium, Sweden.
    Gustafsson, A
    Lund University, Solid State Physics and the Nanometer Structure Consortium, Sweden.
    A luminescence study of doping effects in InP-based radial nanowire structures2013Ingår i: Journal of Physics, Conference Series, ISSN 1742-6588, E-ISSN 1742-6596, Vol. 471, nr 1, artikel-id 012040Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    We have used micro-photo- and cathodo-luminescence at low temperatures to study the effects of sulphur doping in InP and radial InP/InAs/InP structured nanowires. Samples with pure wurtzite crystal structure, with modulated wurtzite/zincblende crystal structure and with different radial InAs growth times were investigated. We observed a doping concentration gradient along the nanowires, the location of segments of different crystal structure and thickness fluctuations on the monolayer scale of the InAs layer.

    Ladda ner fulltext (pdf)
    fulltext
  • 8.
    Thomson, Mark D.
    et al.
    Physikalisches Institut, Goethe-University, D-60438 Frankfurt am Main,Germany.
    Meng, Fanqi
    Physikalisches Institut, Goethe-University, D-60438 Frankfurt am am Main, Germany.
    Sernelius, Bo E.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Teoretisk Fysik. Linköpings universitet, Tekniska fakulteten.
    Roskos, Hartmut G.
    Physikalisches Institut, Goethe-University, D-60438 Frankfurt am Main.
    Relativistic Doppler reflection as a probe for the initialrelaxation of a non-equilibrium electron-hole plasma in silicon2015Ingår i: Journal of Physics, Conference Series, ISSN 1742-6588, E-ISSN 1742-6596, Vol. 647, s. 012016-012019Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    This paper reviews the status of investigations of the relativistic Doppler reflectionof a broadband terahertz pulse at a counter-propagating plasma front of photo-excited chargecarriers in undoped silicon. When a THz pulse with 20-THz bandwidth impinges onto amoving plasma front with a carrier density in the range of 1019 per cm3, one observes a spectralup-shift, which is, however, much less pronounced than expected from simulations assuming a Drude plasma characterized by a single carrier relaxation time τ of the order of 15-100 fs.Qualitative agreement between simulations and experiments can be achieved if τ is chosen tobe less than 5 fs. In order to explore carrier relaxation in more detail, optical-pump/THz-probeexperiments in the conventional co-propagation geometry were performed. If the pump-probedelay is long enough for monitoring of the equilibrium value of the scattering time, τ rangesfrom 200 fs at low carrier density to 20 fs in the 1019-cm-3 density range. For small (subpicosecond)pump-probe delay, the data reveal a significantly faster scattering, which slowsdown during energy relaxation of the charge carriers.

    Ladda ner fulltext (pdf)
    fulltext
  • 9.
    Vasek, P.
    et al.
    Institute of Physics ASCR, Praha, Czech Republic.
    Smrcka, L.
    Institute of Physics ASCR, Praha, Czech Republic.
    Svoboda, P.
    Institute of Physics ASCR, Praha, Czech Republic.
    Ledinsky, M.
    Institute of Physics ASCR, Praha, Czech Republic.
    Jurka, V.
    Institute of Physics ASCR, Praha, Czech Republic.
    Orlita, M.
    Charles University, Praha, Czech Republic.
    Maude, D. K.
    Laboratoire National des Champs Magn´etiques Intenses, CNRS-UJF-UPS-INSA, Grenoble, France.
    Strupinski, W.
    Institute of Electronic Materials Technology, Warszawa, Poland.
    Stepniewski, R.
    Warsaw University, Poland.
    Yakimova, Rositsa
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska högskolan.
    Magnetotransport in graphene on silicon side of SiC2013Ingår i: Journal of Physics, Conference Series, ISSN 1742-6588, E-ISSN 1742-6596, Vol. 456, nr 1, s. 012038-Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    We have studied the transport properties of graphene grown on silicon side of SiC. Samples under study have been prepared by two different growth methods in two different laboratories. Magnetoresistance and Hall resistance have been measured at temperatures between 4 and 100 K in resistive magnet in magnetic fields up to 22 T. In spite of differences in sample preparation, the field dependence of resistances measured on both sets of samples exhibits two periods of magneto-oscillations indicating two different parallel conducting channels with different concentrations of carriers. The semi-quantitative agreement with the model calculation allows for conclusion that channels are formed by high-density and low-density Dirac carriers. The coexistence of two different groups of carriers on the silicon side of SiC was not reported before.

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    fulltext
1 - 9 av 9
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