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  • 1.
    Ackelid, Ulf
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Applied Physics. Linköping University, The Institute of Technology.
    Armgarth, M.
    Linköping University, Department of Physics, Chemistry and Biology, Applied Physics. Linköping University, The Institute of Technology.
    Spetz, Anita
    Linköping University, Department of Physics, Chemistry and Biology, Applied Physics. Linköping University, The Institute of Technology.
    Lundström, Ingemar
    Linköping University, Department of Physics, Chemistry and Biology, Applied Physics. Linköping University, The Institute of Technology.
    Ethanol sensitivity of palladium-gate metal-oxide-semiconductor structures1986In: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 7, no 6, p. 353-355Article in journal (Refereed)
    Abstract [en]

    Hydrogen-sensitive palladium-gate MOS structures heated above 150°C show sensitivity to ethanol vapor. The effect is probably due to catalytic dehydrogenation of adsorbed ethanol molecules on the surface of the palladium gate.

  • 2.
    Briand, D.
    et al.
    Institute of Microtechnology, University of Neuchâtel, CH-2007 Neuchâtel, Switzerland.
    Sundgren, Hans
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Applied Physics .
    Van, Der Schoot B.
    Van Der Schoot, B., Institute of Microtechnology, University of Neuchâtel, CH-2007 Neuchâtel, Switzerland.
    Lundström, Ingemar
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Applied Physics .
    De, Rooij N.F.
    De Rooij, N.F., Institute of Microtechnology, University of Neuchâtel, CH-2007 Neuchâtel, Switzerland.
    Thermally isolated MOSFET for gas sending application2001In: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 22, no 1, p. 11-13Article in journal (Refereed)
    Abstract [en]

    This work reports on thermally isolated electronic components for gas sensing applications. The device is composed of an array of 4 MOSFET, a diode and a semiconductor resistor integrated on a micro-hotplate, which is fabricated using bulk micromachining of silicon. The thermal efficiency of the device is 2°C/mW with a thermal constant less than 100 ms. Holes are made in the passivation film over the gates of the MOSFET and gas sensitive films deposited on top of the gate insulator. The low thermal mass device realized allows new modes of operation for MOSFET gas sensors such as a combination of the field and thermal effects and a pulsed temperature mode of operation.

  • 3.
    Chen, Miaoxiang
    Linköping University, The Institute of Technology. Linköping University, Department of Science and Technology.
    Threshold-voltage tuning characteristics of all-organic electrochemical vertical rectifiers on flexible substrates2006In: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 27, no 4, p. 243-245Article in journal (Refereed)
    Abstract [en]

    A printed all-organic electrochemical vertical tunable rectifier is demonstrated using a conducting polymer as the active material on a flexible plastic substrate. Solution processable poly(3,4-ethylenedioxythiophene) combined with poly(styrene sulfonic acid) (PEDOT:PSS) was coated on polyester film, the rectifier channel was patterned on the PEDOT:PSS film through directly writing technique without the need for masks, patterns, or dies. A vertically layered electrochemical cell was structured via printing and laminating processes to reduce driving voltages. The resulting rectifier is a three-terminal device, the functionality of threshold voltage tuning is realized by adjusting the potential difference within the electrochemical cell. The driving voltages are reduced significantly compared to rectifiers with lateral device architecture. In a single device, the threshold voltage is tunable between 0.16 and 1.0 V while a bias voltage is swept from 0.9 to 1.7 V. © 2006 IEEE.

  • 4.
    Luo, Jun
    et al.
    Chinese Academy of Science.
    Gao, Xindong
    Uppsala University.
    Qiu, Zhi-Jun
    Fudan University.
    Lu, Jun
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Wu, Dongping
    Fudan University.
    Zhao, Chao
    Chinese Academy of Science.
    Li, Junfeng
    Chinese Academy of Science.
    Chen, Dapeng
    Chinese Academy of Science.
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Zhang, Shi-Li
    Uppsala University.
    Thermal Stability and Dopant Segregation for Schottky Diodes With Ultrathin Epitaxial NiSi(2-y)2011In: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 32, no 8, p. 1029-1031Article in journal (Refereed)
    Abstract [en]

    The Schottky barrier height (SBH) of an ultrathin epitaxial NiSi(2-y) film grown on Si(100) is modified significantly by means of dopant segregation (DS). The DS process begins with the NiSi(2-y) formation and is followed by dopant implantation and drive-in annealing. The rapid lattice restoration and superior morphological stability upon heat treatment up to 800 degrees C allow the epitaxial NiSi(2-y) film to take full advantage of the DS process. For drive-in annealing below 750 degrees C, the effective SBH is altered to similar to 0.9-1 eV for both electrons and holes by B-DS and As-DS, respectively, without deteriorating the integrity of the NiSi(2-y) film.

  • 5.
    Magnus, Fridrik
    et al.
    University of Iceland, Reykjavik, Iceland and Uppsala University, Sweden .
    Ingason, Arni Sigurdur
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Olafsson, Sveinn
    University of Iceland, Reykjavik, Iceland .
    Gudmundsson, Jon T.
    University of Iceland, Reykjavik, Iceland and Shanghai Jiao Tong University, Peoples R China .
    Nucleation and Resistivity of Ultrathin TiN Films Grown by High-Power Impulse Magnetron Sputtering2012In: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 33, no 7, p. 1045-1047Article in journal (Refereed)
    Abstract [en]

    TiN films have been grown on SiO2 by reactive high-power impulse magnetron sputtering (HiPIMS) at temperatures of 22 degrees C-600 degrees C. The film resistance is monitored in situ to determine the coalescence and continuity thicknesses that decrease with increasing growth temperature with a minimum of 0.38 +/- 0.05 nm and 1.7 +/- 0.2 nm, respectively, at 400 degrees C. We find that HiPIMS-deposited films have significantly lower resistivity than dc magnetron sputtered (dcMS) films on SiO2 at all growth temperatures due to reduced grain boundary scattering. Thus, ultrathin continuous TiN films with superior electrical characteristics can be obtained with HiPIMS at reduced temperatures compared to dcMS.

  • 6.
    Riedel, Gernot J
    et al.
    University of Bristol.
    Pomeroy, James W
    University of Bristol.
    Hilton, Keith P
    QinetiQ Ltd.
    Maclean, Jessica O
    QinetiQ Ltd.
    Wallis, David J
    QinetiQ Ltd.
    Uren, Michael J
    QinetiQ Ltd.
    Martin, Trevor
    QinetiQ Ltd.
    Forsberg, Urban
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Lundskog, Anders
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Kakanakova-Georgieva, Anelia
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    Pozina, Galia
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Janzén, Erik
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Lossy, Richard
    Ferdinand Braun Institute Hochstfrequenztech.
    Pazirandeh, Reza
    Ferdinand Braun Institute Hochstfrequenztech.
    Brunner, Frank
    Ferdinand Braun Institute Hochstfrequenztech.
    Wuerfl, Joachim
    Ferdinand Braun Institute Hochstfrequenztech.
    Kuball, Martin
    University of Bristol.
    Reducing Thermal Resistance of AlGaN/GaN Electronic Devices Using Novel Nucleation Layers2009In: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 30, no 2, p. 103-106Article in journal (Refereed)
    Abstract [en]

    Currently, up to 50% of the channel temperature in AlGaN/GaN electronic devices is due to the thermal-boundary resistance (TBR) associated with the nucleation layer (NL) needed between GaN and SiC substrates for high-quality heteroepitaxy. Using 3-D time-resolved Raman thermography, it is shown that modifying the NL used for GaN on SiC epitaxy from the metal-organic chemical vapor deposition (MOCVD)-grown standard AIN-NL to a hot-wall MOCVD-grown AIN-NL reduces NL TBR by 25%, resulting in similar to 10% reduction of the operating temperature of AlGaN/GaN HEMTs. Considering the exponential relationship between device lifetime and temperature, lower TBR NLs open new opportunities for improving the reliability of AlGaN/GaN devices.

  • 7.
    See, P.
    et al.
    IEEE, Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, United Kingdom.
    Paul, D.J.
    IEEE, Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, United Kingdom.
    Hollander, B.
    Holländer, B., IEEE, Institut für Schicht und Ionentechnik, Forschungszentrum Jülich, D-52425 Jülich, Germany.
    Mantl, S.
    IEEE, Institut für Schicht und Ionentechnik, Forschungszentrum Jülich, D-52425 Jülich, Germany.
    Zozoulenko, Igor
    Linköping University, The Institute of Technology. Linköping University, Department of Science and Technology.
    Berggren, Karl-Fredrik
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Theoretical Physics .
    High performance Si/Si1-x Gex resonant tunneling diodes2001In: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 22, no 4, p. 182-184Article in journal (Refereed)
    Abstract [en]

    Resonant tunneling diodes (RTDs) with strained i-Si0.4 Ge06. potential barriers and a strained i-Si quantum well, all on a relaxed Si0.8 Ge0.2 virtual substrate were successfully grown by ultra high vacuum compatible chemical vapor deposition and fabricated using standard Si processing methods. A large peak to valley current ratio of 2.9 and a peak current density of 4.3 kA/cm2 at room temperature were recorded from pulsed and continuous dc current-voltage measurements, the highest reported values to date for Si/Si1-x Gex RTDs. These dc figures of merit and material system render such structures suitable and highly compatible with present high speed and low power Si/Si1-x Gex heterojunction field effect transistor based integrated circuits.

  • 8.
    Sudow, M.
    et al.
    Microwave Electronics Laboratory, Chalmers University of Technology, 412 96 Göteborg, Sweden.
    Nemati, H.M.
    Microwave Electronics Laboratory, Chalmers University of Technology, 412 96 Göteborg, Sweden.
    Thorsell, M.
    Microwave Electronics Laboratory, Chalmers University of Technology, 412 96 Göteborg, Sweden.
    Gustavsson, U.
    Microwave Electronics Laboratory, Chalmers University of Technology, 412 96 Göteborg, Sweden.
    Andersson, K.
    Microwave Electronics Laboratory, Chalmers University of Technology, 412 96 Göteborg, Sweden.
    Fager, C.
    Microwave Electronics Laboratory, Chalmers University of Technology, 412 96 Göteborg, Sweden.
    Nilsson, P.-A.
    Nilsson, P.-Å., Microwave Electronics Laboratory, Chalmers University of Technology, 412 96 Göteborg, Sweden.
    ul-Hassan, Jawad
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Henry, Anne
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Janzén, Erik
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Jos, R.
    Microwave Electronics Laboratory, Chalmers University of Technology, 412 96 Göteborg, Sweden, NXP Semiconductors BV, 5656 Eindhoven, Netherlands.
    Rorsman, N.
    Microwave Electronics Laboratory, Chalmers University of Technology, 412 96 Göteborg, Sweden.
    SiC varactors for dynamic load modulation of high power amplifiers2008In: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 29, no 7, p. 728-730Article in journal (Refereed)
    Abstract [en]

    SiC Schottky diode varactors with a high breakdown voltage, a high tuning ratio, and a low series resistance have been designed and fabricated. These characteristics are particularly necessary for the dynamic load modulation of high power amplifiers (PAs), which is an attractive alternative to other efficiency enhancement techniques. For a SiC Schottky diode varactor with a 50-µm radius fabricated by using a graded doping profile, a breakdown voltage of 40 V, a tuning range of 5.6, and a series resistance of 0.9 O were achieved. The results show the great potential of this type of varactors for the use in the dynamic load modulation of high power amplifiers. © 2008 IEEE.

  • 9.
    Tobias, Peter
    et al.
    Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
    Baranzahi, Amir
    Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
    Lloyd Spetz, Anita
    Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
    Kordina, Olle
    Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
    Janzén, Erik
    Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
    Lundström, Ingemar
    Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
    Fast chemical sensing with metal-insulator silicon carbide structures1997In: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 18, no 6, p. 287-289Article in journal (Refereed)
    Abstract [en]

    It is demonstrated that the current-voltage characteristics of platinum-thin insulator silicon carbide diodes react rapidly to changes of the concentration of oxygen and hydrocarbons in the ambient already at temperatures around 500 degrees C-600 degrees C, In this letter, we use moving gas outlets to, for the first time, estimate time constants of the response in the order of a few milliseconds. The short time constants of these sensors make them suitable for applications in combustion monitoring. The new method to modulate gas concentrations rapidly at surfaces has the potential to be a valuable tool for evaluation of device structures for fast chemical sensing.

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