liu.seSearch for publications in DiVA
Change search
Refine search result
1 - 18 of 18
CiteExportLink to result list
Permanent link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Rows per page
  • 5
  • 10
  • 20
  • 50
  • 100
  • 250
Sort
  • Standard (Relevance)
  • Author A-Ö
  • Author Ö-A
  • Title A-Ö
  • Title Ö-A
  • Publication type A-Ö
  • Publication type Ö-A
  • Issued (Oldest first)
  • Issued (Newest first)
  • Created (Oldest first)
  • Created (Newest first)
  • Last updated (Oldest first)
  • Last updated (Newest first)
  • Disputation date (earliest first)
  • Disputation date (latest first)
  • Standard (Relevance)
  • Author A-Ö
  • Author Ö-A
  • Title A-Ö
  • Title Ö-A
  • Publication type A-Ö
  • Publication type Ö-A
  • Issued (Oldest first)
  • Issued (Newest first)
  • Created (Oldest first)
  • Created (Newest first)
  • Last updated (Oldest first)
  • Last updated (Newest first)
  • Disputation date (earliest first)
  • Disputation date (latest first)
Select
The maximal number of hits you can export is 250. When you want to export more records please use the Create feeds function.
  • 1.
    Bergsten, Johan
    et al.
    Chalmers, Sweden.
    Chen, Jr-Tai
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
    Gustafsson, Sebastian
    Chalmers, Sweden.
    Malmros, Anna
    Chalmers, Sweden.
    Forsberg, Urban
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
    Thorsell, Mattias
    Chalmers, Sweden.
    Janzén, Erik
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
    Rorsman, Niklas
    Chalmers, Sweden.
    Performance Enhancement of Microwave GaN HEMTs Without an AlN-Exclusion Layer Using an Optimized AlGaN/GaN Interface Growth Process2016In: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 63, no 1, p. 333-338Article in journal (Refereed)
    Abstract [en]

    The impact of the sharpness of the AlGaN/GaN interface in high-electron mobility transistors (HEMTs) is investigated. Two structures, one with an optimized AlGaN/GaN interface and another with an unoptimized, were grown using hot-wall metal-organic chemical vapor deposition. The structure with optimized sharpness of the interface shows electron mobility of 1760 cm(2)/V . s as compared with 1660 cm(2)/V . s for the nonoptimized interface. Gated Hall measurements indicate that the sharper interface maintains higher mobility when the electrons are close to the interface compared with the nonoptimized structure, indicating less scattering due to alloy disorder and interface roughness. HEMTs were processed and evaluated. The higher mobility manifests as lower parasitic resistance yielding a better dc and high-frequency performance. A small-signal equivalent model is extracted. The results indicate a lower electron penetration into the buffer in the optimized sample. Pulsed-IV measurements imply that the sharper interface provides less dispersive effects at large drain biases. We speculate that the mobility enhancement seen AlGaN/AlN/GaN structures compared with the AlGaN/GaN case is not only related to the larger conduction band offset but also due to a more welldefined interface minimizing scattering due to alloy disorder and interface roughness.

  • 2.
    Bergsten, Johan
    et al.
    Chalmers Univ Technol, Sweden.
    Thorsell, Mattias
    Chalmers Univ Technol, Sweden.
    Adolph, David
    Chalmers Univ Technol, Sweden.
    Chen, Jr-Tai
    SweGaN AB, SE-58330 Linkoping, Sweden.
    Kordina, Olof
    SweGaN AB, SE-58330 Linkoping, Sweden.
    Sveinbjörnsson, Einar
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering. Univ Iceland, Iceland.
    Rorsman, Niklas
    Chalmers Univ Technol, Sweden.
    Electron Trapping in Extended Defects in Microwave AlGaN/GaN HEMTs With Carbon-Doped Buffers2018In: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 65, no 6, p. 2446-2453Article in journal (Refereed)
    Abstract [en]

    This paper investigates AlGaN/GaN high-electron mobility transistors (HEMTs) fabricated on epistructures with carbon (C)-doped buffers. Metalorganic chemical vapor deposition is used to grow two C-doped structures with different doping profiles, using growth parameters to change the C incorporation. The C concentration is low enough to result in n-type GaN. Reference devices are also fabricated on a structure using iron (Fe) as dopant, to exclude any process related variations and provide a relevant benchmark. All devices exhibit similar dc performance. However, pulsed I-V measurements show extensive dispersion in the C-doped devices, with values of dynamicRON 3-4 times larger than in the dc case. Due to the extensive trapping, the devices with C-dopedbuffers can only supply about half the outputpower of the Fe-doped sample, 2.5 W/mm compared to 4.8 W/mm at 10 GHz. In drain current transient measurements, the trap filling time is varied, finding large prevalence of trapping at dislocations for the C-doped samples. Clusters of C around the dislocations are suggested to be the main cause for the increased dispersion.

  • 3.
    Gribisch, Philipp
    et al.
    Lund Univ, Sweden.
    Delgado Carrascon, Rosalia
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
    Darakchieva, Vanya
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering. Lund Univ, Sweden.
    Lind, Erik
    Lund Univ, Sweden.
    Capacitance and Mobility Evaluation for Normally-Off Fully-Vertical GaN FinFETs2023In: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 70, no 8, p. 4101-4107Article in journal (Refereed)
    Abstract [en]

    In this work, we present the fabrication and analysis of fully-vertical GaN FinFETs with a gate length of 550 nm. The devices with fin widths of around 100 nm reveal normally-OFF behavior and subthreshold swings (SSs) very close to the 60-mV/dec limit. Low hysteresis values indicate low defect densities at the oxide/GaN interface. The devices exhibit low specific ON-resistances at a maximum of around 90 V breakdown voltage, which is reasonable for the drift layer thickness of 1 mu m. The capacitances in the devices were modeled and identified with capacitance voltage measurements, which could also be used to approximate the effective and field effect mobility in the channel and reveal to around 164 and 54 cm(2)/(Vs) at higher gate voltages, which is a slight improvement to reported values for similar devices.

  • 4.
    Gribisch, Philipp
    et al.
    Department of Electrical and Information Technology and NanoLund, Lund University, Lund, Sweden.
    Delgado Carrascon, Rosalia
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
    Darakchieva, Vanya
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering. NanoLund and the Physics Department, Lund University, Lund, Sweden.
    Lind, Erik
    Department of Electrical and Information Technology and NanoLund, Lund University, Lund, Sweden.
    Tuning of Quasi-Vertical GaN FinFETs Fabricated on SiC Substrates2023In: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 70, no 5, p. 2408-2414Article in journal (Refereed)
    Abstract [en]

    In this work, we present the fabrication and investigation of the properties of quasi-vertical gallium nitride (GaN) fin field effect transistors (FinFETs) on silicon carbide (SiC) substrates and the influence of a postgate metallization annealing (PMA). The devices reveal low subthreshold swings (SSs) down to around 70 mV/dec. For a 1- μm -thick drift layer, a low ON-resistance below 0.05 mΩ⋅ cm2 (normalized on the fin area) and a breakdown voltage of 60 V were obtained. Devices with included PMA show a decreased threshold voltage and ON-resistance and by several orders of magnitude reduced gate leakage current compared to non-annealed devices. The devices show ohmic contact behavior and slightly negative threshold voltages, which indicates normally- ON behavior. The effective and field-effect mobility of the fin channel was obtained with a modeled carrier concentration and reveal to around 70 and 13 cm2/(Vs) at high gate voltages, which is in a good comparison to so far reported similar devices.

  • 5.
    Gustafsson, Sebastian
    et al.
    Microwave Electronics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Göteborg, Sweden.
    Chen, Jr-Tai
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Bergsten, Johan
    Microwave Electronics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Göteborg, Sweden.
    Forsberg, Urban
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Thorsell, Mattias
    Microwave Electronics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Göteborg, Sweden.
    Janzén, Erik
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Rorsman, Niklas
    Microwave Electronics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Göteborg, Sweden.
    Dispersive Effects in Microwave AlGaN/AlN/GaN HEMTs With Carbon-Doped Buffer2015In: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 62, no 7, p. 2162-2169Article in journal (Refereed)
    Abstract [en]

    Aluminium gallium nitride (AlGaN)/GaN high-electron mobility transistor performance is to a large extent affected by the buffer design, which, in this paper, is varied using different levels of carbon incorporation. Three epitaxial structures have been fabricated: 1) two with uniform carbon doping profile but different carbon concentration and 2) one with a stepped doping profile. The epitaxial structures have been grown on 4H-SiC using hot-wall metal-organic chemical vapor deposition with residual carbon doping. The leakage currents in OFF-state at 10 V drain voltage were in the same order of magnitude (10-4 A/mm) for the high-doped and stepped-doped buffer. The high-doped material had a current collapse (CC) of 78.8% compared with 16.1% for the stepped-doped material under dynamic I-V conditions. The low-doped material had low CC (5.2%) but poor buffer isolation. Trap characterization revealed that the high-doped material had two trap levels at 0.15 and 0.59 eV, and the low-doped material had one trap level at 0.59 eV.

  • 6.
    Hjelmgren, H
    et al.
    Ericsson Microelect AB, S-16481 Stockholm, Sweden.
    Litwin, A
    Ericsson Microelect AB, S-16481 Stockholm, Sweden.
    Small-signal substrate resistance effect in RF CMOS identified through device simulations2001In: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 48, no 2, p. 397-399Article in journal (Refereed)
    Abstract [en]

    An anomalous dip in the measured s(22) characteristic, as well as a decrease in the output resistance, of MOS devices for rf applications was found to be a pure ac effect caused by the small-signal substrate transconductance. The study of the ac characteristics of multifinger transistors in rf applications with high-resistivity substrate also puts a question mark on the possibility of achieving fully scalable models, considering the observed ac substrate effect.

  • 7.
    Kassamakova, L
    et al.
    Bulgarian Acad Sci, Inst Appl Phys, Plovdiv 4000, Bulgaria IMC, Ind Microelect Ctr, S-16421 Kista, Sweden Royal Inst Technol, S-10044 Stockholm, Sweden Linkoping Univ, S-58183 Linkoping, Sweden.
    Kakanakov, RD
    Bulgarian Acad Sci, Inst Appl Phys, Plovdiv 4000, Bulgaria IMC, Ind Microelect Ctr, S-16421 Kista, Sweden Royal Inst Technol, S-10044 Stockholm, Sweden Linkoping Univ, S-58183 Linkoping, Sweden.
    Kassamakov, IV
    Bulgarian Acad Sci, Inst Appl Phys, Plovdiv 4000, Bulgaria IMC, Ind Microelect Ctr, S-16421 Kista, Sweden Royal Inst Technol, S-10044 Stockholm, Sweden Linkoping Univ, S-58183 Linkoping, Sweden.
    Nordell, N
    Bulgarian Acad Sci, Inst Appl Phys, Plovdiv 4000, Bulgaria IMC, Ind Microelect Ctr, S-16421 Kista, Sweden Royal Inst Technol, S-10044 Stockholm, Sweden Linkoping Univ, S-58183 Linkoping, Sweden.
    Savage, S
    Bulgarian Acad Sci, Inst Appl Phys, Plovdiv 4000, Bulgaria IMC, Ind Microelect Ctr, S-16421 Kista, Sweden Royal Inst Technol, S-10044 Stockholm, Sweden Linkoping Univ, S-58183 Linkoping, Sweden.
    Hjorvarsson, B
    Bulgarian Acad Sci, Inst Appl Phys, Plovdiv 4000, Bulgaria IMC, Ind Microelect Ctr, S-16421 Kista, Sweden Royal Inst Technol, S-10044 Stockholm, Sweden Linkoping Univ, S-58183 Linkoping, Sweden.
    Svedberg, EB
    Abom, L
    Bulgarian Acad Sci, Inst Appl Phys, Plovdiv 4000, Bulgaria IMC, Ind Microelect Ctr, S-16421 Kista, Sweden Royal Inst Technol, S-10044 Stockholm, Sweden Linkoping Univ, S-58183 Linkoping, Sweden.
    Madsen, LD
    Bulgarian Acad Sci, Inst Appl Phys, Plovdiv 4000, Bulgaria IMC, Ind Microelect Ctr, S-16421 Kista, Sweden Royal Inst Technol, S-10044 Stockholm, Sweden Linkoping Univ, S-58183 Linkoping, Sweden.
    Temperature stable Pd ohmic contacts to p-type 4H-SiC formed at low temperatures1999In: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 46, no 3, p. 605-611Article in journal (Refereed)
    Abstract [en]

    The formation of low resistivity Pd-based ohmic contacts to p-type 4H-SiC below 750 degrees C are reported herein, The electrical properties of the contacts were examined using I-V measurements and the transmission-line model (TLM) technique. Contact resistivity as a function of annealing was investigated over the temperature range of 600 degrees C-700 degrees C, The lowest contact resistivity (5.5 x 10(-5) Ohm cm(2)) was obtained after annealing at 700 degrees C for 5 min, Atomic force microscopy of the as-deposited Pd layer showed a root-mean square roughness of similar to 8 nm, while after annealing at 700 degrees C, agglomeration occurred, increasing the roughness to 111 nm, Auger electron spectroscopy depth profiles revealed that with annealing, interdiffusion had resulted in the formation of Pd-rich silicides. However, X-ray diffraction and Rutherford backscattering showed that the majority of the film was still (unreacted) Pd. The thermal stability and reliability of the Pd contacts were examined by aging and temperature dependence electrical tests, The contacts annealed at 700 OC were stable at prolonged heating at a constant temperature of 500 degrees C and they showed thermal stability in air at operating temperatures up to 450 degrees C, This stability was not found for contacts formed at lower temperatures of 600 degrees C or 650 degrees C.

  • 8.
    Kawahara, Jun
    et al.
    Department of Printed Electronics, Acreo Swedish ICT AB, Norrköping.
    Andersson Ersman, Peter
    Department of Printed Electronics, Acreo Swedish ICT AB, Norrköping.
    Katoh, Kazuya
    R&D Strategy Department, Lintec Corporation, Saitama, Japan.
    Berggren, Magnus
    Linköping University, Department of Science and Technology, Physics and Electronics. Linköping University, The Institute of Technology.
    Fast-switching printed organic electrochemical transistors including electronic vias through plastic and paper substrates2013In: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 60, no 6, p. 2052-2056Article in journal (Refereed)
    Abstract [en]

    A novel vertical architecture for all-printed organic electrochemical transistors, based on poly(3, 4-ethylenedioxythiophene):poly(styrene sulfonate), realized on flexible substrates, is reported. The transistors are manufactured along both faces of plastic or paper substrates and via connections are realized using laser ablation or simple punch through using a pin. Successful modulation of the electric current that flows between the two sides of the substrate is achieved using electrolyte-gating and electrochemical modulation of the electronic charge transport of the bulk of the transistor channel. In addition to this, the transistors are exhibiting fast switching and high ON/OFF current ratios.

    Download full text (pdf)
    fulltext
  • 9.
    Konofaos, N.
    et al.
    Comp. Engineering/Informatics Dept., University of Patras, Patras 26500, Greece.
    Evangelou, E.K.
    Laboratorio MDM-INFM, Agrate Briana 20041, Italy.
    Wang, Z.
    Helmersson, Ulf
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Plasma and Coating Physics .
    Properties of Al-SrTiO3-ITO capacitors for microelectronic device applications2004In: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 51, no 7, p. 1202-1205Article in journal (Refereed)
    Abstract [en]

    Growth of SrTiO3 (STO) thin films on indium tin oxide (ITO) substrates took place by RF magnetron sputtering under various deposition conditions. Subsequent AI metallization created metal-insulator-metal (MIM) capacitors. The properties of such capacitors were investigated by means of structural and electrical measurements, revealing the films transparency, the dielectric constant, the switching time characteristics, and the trapped charges density. Dielectric constant values as high as 120 were obtained for low frequencies of around 2 kHz, the switching time was found to be 3.2 µs and the trapped charges were found equal to 2.9 nCcm-2. The results showed that the films were suitable for use in electronic devices where high capacitance is required and for potential applications in optical devices. © 2004 IEEE.

  • 10.
    Li, Miao
    et al.
    Tampere Univ, Finland.
    Honkanen, Mari
    Tampere Univ, Finland.
    Liu, Xianjie
    Linköping University, Department of Science and Technology, Laboratory of Organic Electronics. Linköping University, Faculty of Science & Engineering.
    Rokaya, Chakra
    Tampere Univ, Finland.
    Schramm, Andreas
    Tampere Univ, Finland.
    Fahlman, Mats
    Linköping University, Department of Science and Technology, Laboratory of Organic Electronics. Linköping University, Faculty of Science & Engineering.
    Berger, Paul R.
    Tampere Univ, Finland; Ohio State Univ, OH 43210 USA.
    Lupo, Donald
    Tampere Univ, Finland.
    0.7-GHz Solution-Processed Indium Oxide Rectifying Diodes2020In: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 67, no 1, p. 360-364Article in journal (Refereed)
    Abstract [en]

    Solution-based deposition, with its simplicity and possibility for upscaling through printing, is a promising process for low-cost electronics. Metal oxide semiconductor devices, especially indium oxide with its excellent electrical properties, offer high performance compared to amorphous Si-based rivals, and with a form factor conducive to flexible and wearable electronics. Here, rectifying diodes based on an amorphous spin-coated indium oxide are fabricated for high-speed applications. We report a solution-processed diode approaching the UHF range, based on indium oxide, with aluminum and gold as the electrodes. The device was spin-coated from a precursor material and configured into a half-wave rectifier. The J-V and frequency behavior of the diodes were studied, and the material composition of the diode was investigated by X-ray photoemission spectroscopy (XPS). The 3-dB point was found to be over 700 MHz. The results are promising for the development of autonomously powered wireless Internet-of-Things systems based on scalable, low-cost processes.

  • 11.
    Lloyd-Spets, Anita
    et al.
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Applied Physics.
    Tobias, P
    Linkoping Univ, S SENCE, S-58183 Linkoping, Sweden Linkoping Univ, Appl Phys Lab, S-58183 Linkoping, Sweden.
    Baranzahi, A
    Martensson, P
    Lundström, Ingemar
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Applied Physics.
    Current status of silicon carbide based high-temperature gas sensors1999In: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 46, no 3, p. 561-566Article in journal (Refereed)
    Abstract [en]

    Silicon carbide (SIC) based field effect gas sensors can be operated at very high temperatures. Catalytic metal-insulator-silicon carbide (MISiC) Schottky diodes respond very fast to a change between a reducing and an oxidizing atmosphere, and cylinder-specific combustion engine monitoring has been demonstrated. The sensors have also been suggested for high-temperature electronic nose applications. Car applications and other harsh environments put very strong requirements on the long-term stability of the sensors. Here rye review the current status of the field of SiC based Schottkg diode gas sensors with emphasis on the work in our group. Basic work on understanding of the detection mechanism and the influence of interfacial layers on the long-term stability of the sensors is reviewed, The direction of future research and device development in our group is also discussed.

  • 12.
    Luo, Jun
    et al.
    Fudan University.
    Wu, Dongping
    Fudan University.
    Qiu, Zhijun
    Fudan University.
    Lu, Jun
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Ostling, Mikael
    Royal Institute of Technology KTH.
    Zhang, Shi-Li
    Fudan University.
    On Different Process Schemes for MOSFETs With a Controllable NiSi-Based Metallic Source/Drain2011In: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 58, no 7, p. 1898-1906Article in journal (Refereed)
    Abstract [en]

    This paper focuses on different silicidation schemes toward a controllable NiSi-based metallic source/drain (MSD) process with restricted lateral encroachment of NiSi. These schemes include thickness control of Ni, Ni-Pt alloying, and two-step annealing. Experimental results show that all the three process schemes can give rise to effective control of lateral encroachment during Ni silicidation. By controlling t(Ni), NiSi-based MSD metal-oxide-semiconductor field-effect transistors (MOSFETs) of gate length L(G) = 55 nm are readily realized on ultrathin-body silicon-on-insulator substrates with 20-nm surface Si thickness. With the aid of dopant segregation (DS) to modifying the Schottky barrier heights of NiSi, both n- and p-type MSD MOSFETs show significant performance improvement, compared to reference devices without DS.

  • 13.
    Malmros, Anna
    et al.
    Chalmers Univ Technol, Sweden.
    Chen, Jr-Tai
    SweGaN, SE-58330 Linkoping, Sweden.
    Hjelmgren, Hans
    Chalmers Univ Technol, Sweden.
    Lu, Jun
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Kordina, Olof
    SweGaN, SE-58330 Linkoping, Sweden.
    Sveinbjörnsson, Einar
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering. Univ Iceland, Iceland.
    Zirath, Herbert
    Chalmers Univ Technol, Sweden.
    Rorsman, Niklas
    Chalmers Univ Technol, Sweden.
    Enhanced Mobility in InAlN/AlN/GaN HEMTs Using a GaN Interlayer2019In: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 66, no 7, p. 2910-2915Article in journal (Refereed)
    Abstract [en]

    An enhancement of the electron mobility (mu) in InAlN/AlN/GaN heterostructures is demonstrated by the incorporation of a thin GaN interlayer (IL) between the InAlN and AlN. The introduction of a GaN IL increases mu at room temperature (RT) from 1600 to 1930 cm(2)/Vs. The effect is further enhanced at cryogenic temperature (5 K), where the GaN IL sample exhibits a mu of 16 000 cm(2)/Vs, compared to 6900cm(2)/Vs without IL. The results indicate the reduction of one or more scattering mechanisms normally present in InAlN/AlN/GaN heterostructures. We propose that the improvement in mu is either due to the suppression of fluctuations in the quantum well subband energies or to reduced Coulomb scattering, both related to compositional variations in the InAlN. HEMTs fabricated on the GaN IL sample demonstrate larger improvement in dc- and high-frequency performance at 5 K; f(max) increases by 25 GHz to 153 GHz, compared to an increase of 6 GHz to 133 GHz without IL. The difference in improvement was associated mainly with the drop in the access resistances.

  • 14.
    Nicholls, Jordan R.
    et al.
    Griffith Univ, Australia.
    Vidarsson, Arnar M.
    Univ Iceland, Iceland.
    Haasmann, Daniel
    Griffith Univ, Australia.
    Sveinbjörnsson, Einar
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering. Univ Iceland, Iceland.
    Dimitrijev, Sima
    Griffith Univ, Australia.
    Near-Interface Trap Model for the Low Temperature Conductance Signal in SiC MOS Capacitors With Nitrided Gate Oxides2020In: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 67, no 9, p. 3722-3728Article in journal (Refereed)
    Abstract [en]

    The low channel-carrier mobility in commercial SiC MOSFETs has been attributed to fast electron traps labeled "NI." These traps exhibit anomalous behavior compared to other interface trap signals. Furthermore, the electrical parameters extracted from a conventional interface trap analysis of the NI signal are not physically reasonable. To explore the origin of these traps, we fabricated SiC MOS capacitors and measured the conductance across a range of temperatures (between 50 and 300 K). By analyzing the surface electron density at the signal peaks, it is evident that these traps are in fact near-interface traps (NITs)-they are located within the oxide and exchange electrons via a tunneling mechanism. We also developed a model for the conductance generated by NITs and demonstrated a good fit to the experimental data. The knowledge that the NI signal is due to NITs will help in directing future efforts to improve SiC MOSFET performance.

  • 15.
    Pearton, S.J.
    et al.
    Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, United States.
    Norton, D.P.
    Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, United States.
    Ivill, M.P.
    Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, United States.
    Hebard, A.F.
    Department of Physics, University of Florida, Gainesville, FL 32611, United States.
    Zavada, J.M.
    Army Research Office, Research Triangle Park, NC 27709, United States.
    Chen, Weimin
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials.
    Buyanova, Irina A.
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials.
    ZnO doped with transition metal ions2007In: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 54, no 5, p. 1040-1048Article in journal (Refereed)
    Abstract [en]

    Spin-dependent phenomena in ZnO may lead to devices with new or enhanced functionality, such as polarized solid-state light sources and sensitive biological and chemical sensors. In this paper, we review the experimental results on transition metal doping of ZnO and show that the material can be made with a single phase at high levels of Co incorporation (~ 15 at.%) and exhibits the anomalous Hall effect. ZnO is expected to be one of the most promising materials for room-temperature polarized light emission, but to date, we have been unable to detect the optical spin polarization in ZnO. The short spin relaxation time observed likely results from the Rashba effect. Possible solutions involve either cubic phase ZnO or the use of additional stressor layers to create a larger spin splitting in order to get a polarized light emission from these structures or to look at alternative semiconductors and fresh device approaches. © 2007 IEEE.

  • 16.
    Szymanski, Marek
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Surface Physics and Chemistry. Linköping University, Faculty of Science & Engineering.
    Tu, Deyu
    Linköping University, Department of Electrical Engineering, Information Coding. Linköping University, Faculty of Science & Engineering.
    Forchheimer, Robert
    Linköping University, Department of Electrical Engineering, Information Coding. Linköping University, Faculty of Science & Engineering.
    2-D Drift-Diffusion Simulation of Organic Electrochemical Transistors2017In: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 64, no 12, p. 5114-5120Article in journal (Refereed)
    Abstract [en]

    A 2-D device model of the organic electrochemical transistor is described and validated. Devices with channel length in range 100 nm-10 mm and channel thickness in range 50 nm-5 mu m are modeled. Steady-state, transient, and AC simulations are presented. Using the realistic values of physical parameters, the results are in good agreement with the experiments. The scaling of transconductance, bulk capacitance, and transient responses with device dimensions is well reproduced. The model reveals the important role of the electrical double layers in the channel, and the limitations of device scaling.

  • 17.
    Tu, Deyu
    et al.
    Linköping University, The Institute of Technology. Linköping University, Department of Electrical Engineering, Information Coding.
    Herlogsson, Lars
    Linköping University, Department of Science and Technology. Linköping University, The Institute of Technology.
    Kergoat, Loig
    Linköping University, Department of Science and Technology. Linköping University, The Institute of Technology.
    Crispin, Xavier
    Linköping University, The Institute of Technology. Linköping University, Department of Science and Technology, Physics and Electronics.
    Berggren, Magnus
    Linköping University, Department of Science and Technology, Physics and Electronics. Linköping University, The Institute of Technology.
    A Static Model for Electrolyte-Gated Organic Field-Effect Transistors2011In: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 58, no 10, p. 3574-3582Article in journal (Refereed)
    Abstract [en]

    We present a dc model to simulate the static performance of electrolyte-gated organic field-effect transistors. The channel current is expressed as charge drift transport under electric field. The charges accumulated in the channel are considered being contributed fromvoltage-dependent electric-doublelayer capacitance. The voltage-dependent contact effect and short-channel effect are also taken into account in this model. A straightforward and efficient methodology is presented to extract the model parameters. The versatility of this model is discussed as well. The model is verified by the good agreement between simulation and experimental data.

    Download full text (pdf)
    fulltext
  • 18.
    Zhang, Hongpeng
    et al.
    Xidian Univ, Peoples R China.
    Yuan, Lei
    Xidian Univ, Peoples R China.
    Tang, Xiaoyan
    Xidian Univ, Peoples R China.
    Hu, Jichao
    Xian Univ Technol, Peoples R China.
    Sun, Jianwu
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
    Zhang, Yimen
    Xidian Univ, Peoples R China.
    Zhang, Yuming
    Xidian Univ, Peoples R China.
    Jia, Renxu
    Xidian Univ, Peoples R China.
    Influence of Metal Gate Electrodes on Electrical Properties of Atomic-Layer-Deposited Al-Rich HfAlO/Ga2O3 MOSCAPs2020In: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 67, no 4, p. 1730-1736Article in journal (Refereed)
    Abstract [en]

    As the p-type doping beta-Ga2O3 is absent up to now, metal gate (MG) stacks with high work functions are expected to benefit the fabrication of normally-OFF beta-Ga2O3 transistors. In this article, the electrical characteristics of beta-Ga2O3 metal-electrode-gated metal-oxidesemiconductor (MOS) deviceswith Al-rich HfAlO dielectrics and different MG stacks (Ni, Au, Pt, and Ti) are evaluated. The interface state density (Dit) of HfAlO/ beta-Ga2O3 interface is characterized based on the frequency-dependent capacitance-voltage (C-V) and photo-assisted deep ultraviolet (DUV) C-V measurements. An average Dit of 4.45 x 10(11) eV(-1)cm(-2) is extracted from the photo-assisted (deep UV) C-V measurement, while a large amount of border traps, negative fixed charges, and deep traps is also induced at the oxide layer and/or HfAlO/beta-Ga2O3 interface. Then, this article investigates the evaluations of Ti, Ni, Au, and Pt as candidate MGs for beta-Ga2O3 MOS using Al-rich HfAlO as gate dielectric. The obvious flat-band voltage (V-FB) shift and gate leakage variation are observed in beta-Ga2O3 capacitors with different MG solutions, indicating that HfAlO dielectric combined with Ni, Au, and Pt MGs is promising to facilitate some beneficial modifications of normally-OFF beta-Ga2O3 transistors, while Ti electrode ismore suitable for normally-ON beta-Ga2O3 transistors. This article provides an additional practical guideline for choosing the appropriate MG stacks and potential gate dielectric to the development of normally-OFF Ga2O3 transistors.

1 - 18 of 18
CiteExportLink to result list
Permanent link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf