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  • 1.
    Boström, Mathias
    et al.
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Theoretical Physics .
    Sernelius, Bo
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Theoretical Physics .
    Temperature effects on the Casimir attraction between a pair of quantum wells2000In: Microelectronic Engineering, ISSN 0167-9317, E-ISSN 1873-5568, Vol. 51, p. 287-297Article in journal (Refereed)
    Abstract [en]

    We present calculations of the free energy of attraction between two quantum wells in which the wells are treated as strictly two-dimensional metallic sheets. The van der Waals force exhibits fractional separation dependence in this system. This is in contrast to the usual integer separation dependence. We have performed numerical calculations at different temperatures and with different carrier densities. Except at very low temperatures thermal effects will be a dominating source of attraction. We have determined temperature criteria that must be fulfilled for the fractional separation dependence to be observable. Thermal corrections will be important already at temperatures less than 1 K. We further make some comments on a recent measurement of the Casimir force.

  • 2.
    Chubarova, E.
    et al.
    Royal Institute Technology KTH.
    Nilsson, D.
    Royal Institute Technology KTH.
    Lindblom, M.
    Royal Institute Technology KTH.
    Reinspach, J.
    Royal Institute Technology KTH.
    Birch, Jens
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Vogt, U.
    Royal Institute Technology KTH.
    Hertz, H. M.
    Royal Institute Technology KTH.
    Holmberg, A.
    Royal Institute Technology KTH, Department Appl Phys, SE-10691 Stockholm, Sweden.
    Platinum zone plates for hard X-ray applications2011In: Microelectronic Engineering, ISSN 0167-9317, E-ISSN 1873-5568, Vol. 88, no 10, p. 3123-3126Article in journal (Refereed)
    Abstract [en]

    We describe the fabrication and evaluation of platinum zone plates for 5-12 kV X-ray imaging and focusing. These nano-scale circular periodic structures are fabricated by filling an e-beam generated mold with Pt in an electroplating process. The plating recipe is described. The resulting zone plates, having outer zone widths of 100 and 50 nm, show good uniformity and high aspect ratio. Their diffraction efficiencies are 50-70% of the theoretical, as measured at the European Synchrotron Radiation Facility. Platinum shows promise to become an attractive alternative to present hard X-ray zone plate materials due to its nano-structuring properties and the potential for zone-plate operation at higher temperatures.

  • 3.
    Collaert, N.
    et al.
    Imec, Kapeldreef 75, Heverlee, Belgium.
    Alian, A.
    Imec, Kapeldreef 75, Heverlee, Belgium.
    Arimura, H.
    Imec, Kapeldreef 75, Heverlee, Belgium.
    Boccardi, G.
    Imec, Kapeldreef 75, Heverlee, Belgium.
    Eneman, G.
    Imec, Kapeldreef 75, Heverlee, Belgium.
    Franco, J.
    Imec, Kapeldreef 75, Heverlee, Belgium.
    Ivanov, Ts.
    Imec, Kapeldreef 75, Heverlee, Belgium.
    Lin, D.
    Imec, Kapeldreef 75, Heverlee, Belgium.
    Loo, R.
    Imec, Kapeldreef 75, Heverlee, Belgium.
    Merckling, C.
    Imec, Kapeldreef 75, Heverlee, Belgium.
    Mitard, J.
    Imec, Kapeldreef 75, Heverlee, Belgium.
    Pourghaderi, M. A.
    Imec, Kapeldreef 75, Heverlee, Belgium.
    Rooyackers, R.
    Imec, Kapeldreef 75, Heverlee, Belgium.
    Sioncke, S.
    Imec, Kapeldreef 75, Heverlee, Belgium.
    Sun, J. W.
    Imec, Kapeldreef 75, Heverlee, Belgium.
    Vandooren, A.
    Imec, Kapeldreef 75, Heverlee, Belgium.
    Veloso, A.
    Imec, Kapeldreef 75, Heverlee, Belgium.
    Verhulst, A.
    Imec, Kapeldreef 75, Heverlee, Belgium.
    Waldron, N.
    Imec, Kapeldreef 75, Heverlee, Belgium.
    Witters, L.
    Imec, Kapeldreef 75, Heverlee, Belgium.
    Zhou, D.
    Imec, Kapeldreef 75, Heverlee, Belgium.
    Barla, K.
    Imec, Kapeldreef 75, Heverlee, Belgium.
    Thean, A. V. -Y
    Imec, Kapeldreef 75, Heverlee, Belgium.
    Ultimate nano-electronics: New materials and device concepts for scaling nano-electronics beyond the Si roadmap2015In: Microelectronic Engineering, ISSN 0167-9317, E-ISSN 1873-5568, Vol. 132, p. 218-225Article in journal (Refereed)
    Abstract [en]

    Abstract In this work, we will give an overview of the innovations in materials and new device concepts that will be needed to continue Moore’s law to the sub-10 nm technology nodes. To meet the power and performance requirements high mobility materials in combination with new device concepts like tunnel FETs and gate-all-around devices will need to be introduced. As the density is further increased and it becomes increasingly difficult to put contacts, spacers and gate in the available gate pitch, disruptive integration schemes such as vertical transistors and monolithic 3D integration might lead the way to the ultimate scaling of CMOS.

  • 4.
    Mikhelashvili, V.
    et al.
    Technion Israel Institute Technology, Israel.
    Meyler, B.
    Technion Israel Institute Technology, Israel.
    Garbrecht, Magnus
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Cohen-Hyams, T.
    Technion Israel Institute Technology, Israel.
    Roizin, Y.
    TowerJazz, Israel.
    Lisiansky, M.
    TowerJazz, Israel.
    Kaplan, W. D.
    Technion Israel Institute Technology, Israel.
    Salzman, Y.
    Technion Israel Institute Technology, Israel.
    Eisenstein, G.
    Technion Israel Institute Technology, Israel.
    The effect of light irradiation on electrons and holes trapping in nonvolotile memory capacitors employing sub 10 nm SiO2-HfO2 stacks and Au nanocrystals2011In: Microelectronic Engineering, ISSN 0167-9317, E-ISSN 1873-5568, Vol. 88, no 6, p. 964-968Article in journal (Refereed)
    Abstract [en]

    We demonstrate the possibility to control charge trapping in the memory stacks comprised of metal nanocrystals (NCs) sandwiched between SiO2 and high-k dielectric films by light irradiation. Non-equilibrium depletion effects in the state of the art charge trapping memories are reported for the first time. The studied nonvolatile memory devices employ Au NCs, thermal SiO2 tunnel layer, atomic layer deposited HfO2 blocking layer and Au/Pt metal gate. The memory windows are 3 V and 10.5 in the dark and under illumination for +/- 10 V programming voltages. Reliability limitations of the studied structure, in particular leakage currents and effects in high electric fields have been investigated in detail and are discussed in view of the mentioned device application. Low programming voltages and currents, and high light sensitivity make suggested NVM structures promising for developing digital imagers with ultralow power consumption. (c) 2011 Elsevier B.V. All rights reserved.

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