liu.seSearch for publications in DiVA
Change search
Refine search result
1 - 4 of 4
CiteExportLink to result list
Permanent link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Rows per page
  • 5
  • 10
  • 20
  • 50
  • 100
  • 250
Sort
  • Standard (Relevance)
  • Author A-Ö
  • Author Ö-A
  • Title A-Ö
  • Title Ö-A
  • Publication type A-Ö
  • Publication type Ö-A
  • Issued (Oldest first)
  • Issued (Newest first)
  • Created (Oldest first)
  • Created (Newest first)
  • Last updated (Oldest first)
  • Last updated (Newest first)
  • Disputation date (earliest first)
  • Disputation date (latest first)
  • Standard (Relevance)
  • Author A-Ö
  • Author Ö-A
  • Title A-Ö
  • Title Ö-A
  • Publication type A-Ö
  • Publication type Ö-A
  • Issued (Oldest first)
  • Issued (Newest first)
  • Created (Oldest first)
  • Created (Newest first)
  • Last updated (Oldest first)
  • Last updated (Newest first)
  • Disputation date (earliest first)
  • Disputation date (latest first)
Select
The maximal number of hits you can export is 250. When you want to export more records please use the Create feeds function.
  • 1.
    Chen, Miaoxiang
    Linköping University, The Institute of Technology. Linköping University, Department of Science and Technology.
    Printed electrochemical devices using conducting polymers as active materials on flexible substrates2005In: Proceedings of the IEEE, ISSN 0018-9219, E-ISSN 1558-2256, Vol. 93, no 7, p. 1339-1347Article in journal (Refereed)
    Abstract [en]

    This paper reports some of our initial works in pursuit of a simple and low-cost method of fabricating all-organic electrochemical diodes, triodes, and transistors on flexible plastic or paper substrates. Conducting polymer poly(3,4-ethylenedioxythiophene) poly(styrene sulfonate) (PEDOT: PSS), utilized as an active component, is deposited by spin-coating or printing techniques. The devices are directly fabricated from design without the need for masks, patterns, or dies. The output characteristics of both half-wave and full-wave rectifier circuits from two-terminal diodes show stable performances at frequencies below 5 Hz. In three-terminal tunable triodes, threshold voltage can be tuned in the range between 0.25 and 1.6 V In Jour-terminal transistors, ambipolar operation function can be realized in one single device. I-ON/I-OFF current ratios of 10(3)-10(4) have been achieved in the triode and transistor at operating voltages below 3 V In addition, the device applications in electrochromic displays, logical circuits, as well as the switching speed of the circuits and device stability, are discussed.

  • 2.
    Holland, Oliver
    et al.
    Kings Coll London, England.
    Steinbach, Eckehard
    Tech Univ Munich, Germany.
    Prasad, R. Venkatesha
    Delft Univ Technol, Netherlands.
    Liu, Qian
    Dalian Univ Technol, Peoples R China.
    Dawy, Zaher
    Amer Univ Beirut, Lebanon.
    Aijaz, Adnan
    Toshiba Res Europe Ltd, England.
    Pappas, Nikolaos
    Linköping University, Department of Science and Technology, Communications and Transport Systems. Linköping University, Faculty of Science & Engineering.
    Chandra, Kishor
    Delft Univ Technol, Netherlands.
    Rao, Vijay S.
    Delft Univ Technol, Netherlands.
    Oteafy, Sharief
    Depaul Univ, IL 60604 USA.
    Eid, Mohamad
    New York Univ Abu Dhabi, U Arab Emirates.
    Luden, Mark
    Guitarnrner Co, OH 43086 USA.
    Bhardwaj, Amit
    Tech Univ Munich, Germany.
    Liu, Xun
    Kings Coll London, England.
    Sachs, Joachim
    Ericsson Res, Sweden.
    Araujo, Jose
    Ericsson Res, Sweden.
    The IEEE 1918.1 "Tactile Internet" Standards Working Group and its Standards2019In: Proceedings of the IEEE, ISSN 0018-9219, E-ISSN 1558-2256, Vol. 107, no 2, p. 256-279Article in journal (Refereed)
    Abstract [en]

    The IEEE "Tactile Internet" (TI) Standards working group (WG), designated the numbering IEEE 1918.1, undertakes pioneering work on the development of standards for the TI. This paper describes the WG, its intentions, and its developing baseline standard and the associated reasoning behind that and touches on a further standard already initiated under its scope: IEEE 1918.1.1 on "Haptic Codecs for the TI." IEEE 1918.1 and its baseline standard aim to set the framework and act as the foundations for the TI, thereby also serving as a basis for further standards developed on TI within the WG. This paper discusses the aspects of the framework such as its created TI architecture, including the elements, functions, interfaces, and other considerations therein, as well as the novel aspects and differentiating factors compared with, e.g., 5G Ultra-Reliable Low-Latency Communication, where it is noted that the TI will likely operate as an overlay on other networks or combinations of networks. Key foundations of the WG and its baseline standard are also highlighted, including the intended use cases and associated requirements that the standard must serve, and the TIs fundamental definition and assumptions as understood by the WG, among other aspects.

  • 3.
    Leitao, Paulo
    et al.
    Polytech Institute Braganca, Brazil; Artificial Intelligence and Comp Science Lab LIACC, Portugal.
    Karnouskos, Stamatis
    SAP, Germany.
    Ribeiro, Luis
    Linköping University, Department of Management and Engineering, Manufacturing Engineering. Linköping University, Faculty of Science & Engineering.
    Lee, Jay
    University of Cincinnati, OH 45221 USA.
    Strasser, Thomas
    AIT Austrian Institute Technology, Austria.
    Colombo, Armando W.
    University of Appl Science Emden Leer, Germany; Schneider Elect Ind Business, France.
    Smart Agents in Industrial Cyber-Physical Systems2016In: Proceedings of the IEEE, ISSN 0018-9219, E-ISSN 1558-2256, Vol. 104, no 5, p. 1086-1101Article in journal (Refereed)
    Abstract [en]

    Future industrial systems can be realized using the cyber-physical systems (CPSs) that advocate the coexistence of cyber and physical counterparts in a network structure to perform the systems functions in a collaborative manner. Multiagent systems share common ground with CPSs and can empower them with a multitude of capabilities in their efforts to achieve complexity management, decentralization, intelligence, modularity, flexibility, robustness, adaptation, and responsiveness. This work surveys and analyzes the current state of the industrial application of agent technology in CPSs, and provides a vision on the way agents can effectively enable emerging CPS challenges.

  • 4.
    Paskova, Tanya
    et al.
    Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
    Hanser, Drew A.
    Kyma Technol Inc.
    Evans, Keith R.
    Kyma Technol Inc.
    GaN Substrates for III-Nitride Devices2010In: Proceedings of the IEEE, ISSN 0018-9219, E-ISSN 1558-2256, Vol. 98, no 7, p. 1324-1338Article in journal (Refereed)
    Abstract [en]

    Despite the rapid commercialization of III-nitride semiconductor devices for applications in visible and ultraviolet optoelectronics and in high-power and high-frequency electronics, their full potential is limited by two primary obstacles: i) a high defect density and biaxial strain due to the heteroepitaxial growth on foreign substrates, which result in lower performance and shortened device lifetime, and ii) a strong built-in electric field due to spontaneous and piezoelectric polarization in the wurtzite structures along the well-established [0001] growth direction for nitrides. Recent advances in the research, development, and commercial production of native GaN substrates with low defect density and high structural and optical quality have opened opportunities to overcome both of these obstacles and have led to significant progress in the development of several opto-electronic and high-power devices. In this paper, the recent achievements in bulk GaN growth development using different approaches are reviewed; comparison of the bulk materials grown in different directions is made; and the current achievements in device performance utilizing native GaN substrate material are summarized.

1 - 4 of 4
CiteExportLink to result list
Permanent link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf