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  • 1.
    Beshkova, Milena
    et al.
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Grigorov, K. G.
    Zakhariev, Z.
    Abrashev, M.
    Massi, M.
    Yakimova, Rositsa
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Sublimation epitaxy of AlN layers grown by different conditions on 4H-SiC substrates2007In: Journal of Optoelectronics and Advanced Materials, ISSN 1454-4164, E-ISSN 1841-7132, Vol. 9, no 1, p. 213-216Article in journal (Refereed)
    Abstract [en]

    Epitaxial layers of aluminium nitride were grown at temperature 2100 degrees C on 10X10 mm(2) 4H-SiC substrates via a sublimation-recondensation method in an RF heated graphite furnace. The source material was polycrystalline sintered AIN. Growths of AIN layers in vacuum and pure nitrogen at 20 mbar were compared. MA maximum growth rate of 70 mu m/h was achieved in a pure N-2 atmosphere. The surface morphology reveals the hexagonal symmetry of the seeds, suggesting an epitaxial growth. This was confirmed by High-Resolution X-Ray Diffraction. The spectra showed a strong and well defined (0002) reflection positioned at 36.04 degrees in a symmetric theta-2 theta scan for both samples. Micro-Raman spectroscopy revealed that the films had a wurtzite structure. Rutherford Backscattering Spectrometry indicated the quality with a relative chi(min) parameter 0.68.

  • 2.
    Fakhar-E-Alam, M.
    et al.
    Linköping University, Department of Science and Technology. Linköping University, Faculty of Science & Engineering. GC University, Pakistan.
    Kishwer, Sultana
    Linköping University, Department of Science and Technology. Linköping University, Faculty of Science & Engineering.
    Abbas, Najeeb
    GC University, Pakistan.
    Atif, M.
    King Saud University, Saudi Arabia; National Institute Laser and Optron, Pakistan.
    Nour, Omer
    Linköping University, Department of Science and Technology, Physics and Electronics. Linköping University, Faculty of Science & Engineering.
    Willander, Magnus
    Linköping University, Department of Science and Technology, Physics and Electronics. Linköping University, Faculty of Science & Engineering.
    Amin, Nasir
    GC University, Pakistan.
    Farooq, W. A.
    King Saud University, Saudi Arabia.
    Anticancer effects of nanometallic oxides and their ligands with photosensitizers in osteosarcoma cells2015In: Journal of Optoelectronics and Advanced Materials, ISSN 1454-4164, E-ISSN 1841-7132, Vol. 17, no 11-12, p. 1808-1815Article in journal (Refereed)
    Abstract [en]

    We studied the cytotoxic effects in Osteosarcoma (U2OS) cells to different nanosized metallic oxides e.g. zinc oxide nanowires (ZnO-NRs), manganese di-oxide nanowires (MnO2 NWs), ferric oxide nanoparticles (Fe2O3 NPs) individually and their connplexed forms with photosensitizers photofrin (R), 5-Aminolevulinic acid (5-ALA), and protoporphyrin IX (Pp IX). Cellular toxicity was assayed by cellular morphology, reactive oxygen species (ROS) detection, MTT assay under ultraviolet (UV), visible light and laser exposed conditions. Prominent cell death with above cited nanomaterials in their complexed forms with Photosensitizer was observed in labeled U2OS cells. This cell death might be due to their synergetic effect via the release of singlet oxygen species in Osteosarcoma cells showing their anticancer-cell effects.

  • 3.
    Kanciurzewska, Anna
    et al.
    Linköping University, The Institute of Technology. Linköping University, Department of Science and Technology.
    Dobruchowska, E.
    Baranzahi, Amir
    Linköping University, The Institute of Technology. Linköping University, Department of Science and Technology.
    Carlegrim, Elin
    Linköping University, The Institute of Technology. Linköping University, Department of Science and Technology.
    Fahlman, Mats
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Surface Physics and Chemistry .
    Girtu, M. A.
    Study on Poly(3,4-ethylene dioxythiophene)-Poly(styrenesulfonate) as a plastic counter electrode in dye sensitized solar cells2007In: Journal of Optoelectronics and Advanced Materials, ISSN 1454-4164, E-ISSN 1841-7132, Vol. 9, no 4, p. 1052-1059Article in journal (Refereed)
    Abstract [en]

    Dye sensitized solar cells with PEDOT-PSS coated directly on flexible polyester substrate as counter electrode have been fabricated. The behavior of such plastic counter electrode in the presence of I/I-3 redox electrolyte has been investigated with X-ray photoelectron spectroscopy. We have found that some of iodine species are "trapped" within the PEDOT-PSS layer. The presence of I-3, I-2 and PEDOT charge transfer complexes with iodine species may block the surface of the electrode. Furthermore, the PEDOT may be further oxidized (p-doped) during cell operation, which in turn may cause overoxidation and loss of conductivity in the PEDOT-PSS film. Additionally, the interactions between PEDOT and iodine species may be enlarged because of the partial loss of PSS protective counter ion. That has resulted in decrease of PEDOT-PSS catalytic activity for reduction of I-3 to I in the redox electrolyte and has caused worse cell performance than in case of DSSC with Pt counter electrode.

  • 4.
    Khranovskyy, Volodymyr
    et al.
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    Yazdi, Gholamreza
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    Larsson, Arvid
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    Hussain, S
    Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
    Holtz, Per-Olof
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    Yakimova, Rositsa
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    Growth and characterization of ZnO nanostructured material2008In: Journal of Optoelectronics and Advanced Materials, ISSN 1454-4164, E-ISSN 1841-7132, Vol. 10, no 11, p. 2969-2975Article in journal (Refereed)
    Abstract [en]

    ZnO is a wide band gap (3.37 eV) semiconductor material with a high exciton binding energy (60 meV) at room temperature, which is a prerequisite for realization of efficient and stable optoelectronic systems. We demonstrated the APMOCVD growth of nanostructured ZnO material on Si and SiC with advanced emitting properties. The comparison of the properties of nanostructured polycrystalline layers with spatially disconnected ZnO nanocrystals clearly showed the advantage of the latter structures. Such structures distinctively luminesce in the UV range of the spectrum due to excitonic emission, while the contribution of the defect related luminescence is negligible. The significant improvement of the PL properties can be related to the decreased number of non-radiative recombination centers in the nanocrystals of high structural quality.

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