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  • 1. Blomquist, T.
    et al.
    Zozoulenko, Igor
    Linköping University, The Institute of Technology. Linköping University, Department of Science and Technology.
    Origin of conductance oscillations in square electron billiards: A semi-classical approach2000In: Physica. E, Low-Dimensional systems and nanostructures, ISSN 1386-9477, E-ISSN 1873-1759, Vol. 6, no 1, 392-395 p.Article in journal (Refereed)
    Abstract [en]

    We perform semi-classical and quantum mechanical calculations on square billiards and provide a semi-classical interpretation of the conductance oscillations. We outline its relation to the Gutzwiller's picture of periodic orbits. The frequencies of the conductance oscillations are shown to be due to interference of pairs of long trajectories, which in the phase space are typically situated near the corresponding periodic orbit. We identify the pair of trajectories causing the pronounced peak in a recent experiment and from this directly extract the phase coherence length.

  • 2.
    Byszewski, M.
    et al.
    Ecole Polytechnique Fédérale de Lausanne .
    Chalupar, B.
    Ecole Polytechnique Fédérale de Lausanne .
    Karlsson, Fredrik
    Ecole Polytechnique Fédérale de Lausanne .
    Oberli, D.Y.
    Ecole Polytechnique Fédérale de Lausanne .
    Pelucchi, E.
    Ecole Polytechnique Fédérale de Lausanne .
    Rudra, A.
    Ecole Polytechnique Fédérale de Lausanne .
    Kapon, E.
    Ecole Polytechnique Fédérale de Lausanne .
    Magneto-photoluminescence of heavy- and light-hole excitons in site-controlled pyramidal quantum dots2008In: Physica. E, Low-Dimensional systems and nanostructures, ISSN 1386-9477, E-ISSN 1873-1759, Vol. 40, no 6, 1873-1875 p.Article in journal (Refereed)
    Abstract [en]

    Pyramidal, site-controlled InGaAs/AlGaAs quantum dots (QDs) are studied by micro-photoluminescence (PL) spectroscopy in a magnetic field. The light-hole (LH) excitonic transitions exhibit diamagnetic shifts similar to those of their heavy-hole (HH) counterparts. From the evolution of the excitonic lines, effective g-factors of g=1.7 and 0.4 for HH and LH neutral excitons are inferred

  • 3.
    Croitoru, MD
    et al.
    University of Instelling Antwerp, Netherlands.
    Gladilin, VN
    University of Instelling Antwerp, Netherlands.
    Fomin, VM
    University of Instelling Antwerp, Netherlands.
    Devreese, JT
    University of Instelling Antwerp, Netherlands.
    Kemerink, Martijn
    University of Instelling Antwerp, Netherlands.
    Koenraad, PM
    University of Instelling Antwerp, Netherlands.
    Sauthoff, K
    University of Instelling Antwerp, Netherlands.
    Wolter, JH
    University of Instelling Antwerp, Netherlands.
    Electroluminescence spectra of an STM-tip-induced quantum dot2004In: Physica. E, Low-Dimensional systems and nanostructures, ISSN 1386-9477, E-ISSN 1873-1759, Vol. 21, no 2-4, 270-274 p.Article in journal (Refereed)
    Abstract [en]

    We analyze the electroluminescence spectrum of an STM-tip-induced quantum dot in a GaAs surface layer. A flexible model has been developed, that combines analytical and numerical methods and describes the key features of many-particle states in the STM-tip-induced quantum dot. The dot is characterized by its depth and lateral width, which are experimentally controlled by the bias and the tunneling current. We find, in agreement with experiment, that increasing voltage on the STM-tip results in a red shift of the electroluminescence peaks, while the peak positions as a function of the electron tunneling current through the STM-tip reveal a blue shift. (C) 2003 Elsevier B.V. All rights reserved.

  • 4.
    Croitoru, MD
    et al.
    University of Antwerp, Moldova.
    Gladilin, VN
    University of Antwerp, Moldova.
    Fomin, VM
    University of Antwerp, Moldova.
    Devreese, JT
    University of Antwerp, Moldova.
    Kemerink, Martijn
    University of Antwerp, Moldova.
    Koenraad, PM
    University of Antwerp, Moldova.
    Sauthoff, K
    University of Antwerp, Moldova.
    Wolter, JH
    University of Antwerp, Moldova.
    Influence of the characteristics of the STM-tip on the electroluminescence spectra2005In: Physica. E, Low-Dimensional systems and nanostructures, ISSN 1386-9477, E-ISSN 1873-1759, Vol. 27, no 1-2, 13-20 p.Article in journal (Refereed)
    Abstract [en]

    We analyze the influence of the characteristics of the STM-tip (applied voltage, tip radius) on the electroluminescence spectra from an STM-tip-induced quantum dot. We find that positions of electroluminescence peaks, attributed to the electron-hole recombination in the quantum dot, are very sensitive to the characteristics of the tip, namely increasing voltage on the STM-tip results in a red shift of the electroluminescence peaks, while the peak positions as a function of the tip radius reveal a non-monotonous behavior. (c) 2004 Elsevier B.V. All rights reserved.

  • 5.
    Fu, Y
    et al.
    Chalmers.
    Willander, Magnus
    Chalmers.
    Hole conduction characteristics of strained Si1-xGex/Si resonant tunneling diode2002In: Physica. E, Low-Dimensional systems and nanostructures, ISSN 1386-9477, E-ISSN 1873-1759, Vol. 13, no 1, 72-79 p.Article in journal (Refereed)
    Abstract [en]

    We study the hole conduction characteristics of p-type strained Si1-xGex/Si double-barrier resonant tunneling diodes (RTD). By extensive theoretical calculation of the 6 x 6 k (.) p model together with the deformation potential to account to the strain in Si1-xGex layer, we have obtained the hole conduction characteristics which explains the recent experimental results of Han et al. (J. Cryst. Growth 209 (2000) 315), where it was reported that the low-bias resonance peak becomes dissolved by increasing the device temperature. The calculated I-V characteristics exhibits several resonance peaks, and the current density varies drastically (the second-resonance peak current density is higher than the first one by a factor of 10(3)). Since only resonance peak having high-enough current density is measurable, low-temperature I-V characterization can only dissolve high-bias resonance. Increasing the device temperature, low-bias resonance becomes significant due to thermal excitation.

  • 6.
    Karlsson, Fredrik
    et al.
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Moskalenko, Evgenii
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
    Holtz, Per-Olof
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Monemar, Bo
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Garcia, J.M.
    Schoenfeld, W.V.
    Petroff, P.M.
    The influence of carrier diffusion on the formation of charged excitons in InAs/GaAs quantum dots2002In: Physica. E, Low-Dimensional systems and nanostructures, ISSN 1386-9477, E-ISSN 1873-1759, Vol. 13, no 2-4, 101-104 p.Article in journal (Refereed)
    Abstract [en]

    It is demonstrated that the photoluminescence spectra of single self-assembled quantum dots are very sensitive to the excitation energy and crystal temperature. A qualitative explanation is given in terms of the effective diffusivity of the photogenerated carriers, determined by the experimental conditions, which influence the capture probability and hence also the charge state of the quantum dots (QDs). This is proposed as an effective tool to populate quantum dots with extra electrons in order to study phenomena involving charged excitons. ⌐ 2002 Elsevier Science B.V. All rights reserved.

  • 7.
    Kemerink, Martijn
    et al.
    Eindhoven University of Technology, Netherlands.
    Offermans, P
    Eindhoven University of Technology, Netherlands.
    Koenraad, PM
    Eindhoven University of Technology, Netherlands.
    van Duren, JKJ
    Eindhoven University of Technology, Netherlands.
    Janssen, RAJ
    Eindhoven University of Technology, Netherlands.
    Salemink, HWM
    Eindhoven University of Technology, Netherlands.
    Wolter, JH
    Eindhoven University of Technology, Netherlands.
    Measuring the potential distribution inside soft organic semiconductors with a scanning-tunneling microscope2002In: Physica. E, Low-Dimensional systems and nanostructures, ISSN 1386-9477, E-ISSN 1873-1759, Vol. 13, no 2-4, 1247-1250 p.Article in journal (Refereed)
    Abstract [en]

    For the first time, we directly measured the potential distribution inside organic semiconductors. Combined spectroscopic measurements are performed on MDMO-PPV layers on Au and Yb substrates, using a scanning-tunneling microscope. The results are analyzed with a model that treats both current injection and bulk transport in detail. It is found that tip height-bias curves, which are taken by following the height of the STM tip as a function of bias, while the STM feedback system is active, reflect the potential distribution between tip and sample electrode. (C) 2002 Elsevier Science B.V. All rights reserved.

  • 8.
    Kemerink, Martijn
    et al.
    Eindhoven University of Technology, Germany.
    Reusch, TCG
    Eindhoven University of Technology, Germany.
    Bruls, DM
    Eindhoven University of Technology, Germany.
    Koenraad, PM
    Eindhoven University of Technology, Germany.
    Salemink, HWM
    Eindhoven University of Technology, Germany.
    Wolter, JH
    Eindhoven University of Technology, Germany.
    Quantitative determination of the charge density on surface steps on semiconductors by high-resolution local scanning-tunneling spectroscopy2002In: Physica. E, Low-Dimensional systems and nanostructures, ISSN 1386-9477, E-ISSN 1873-1759, Vol. 13, no 2-4, 1159-1162 p.Article in journal (Refereed)
    Abstract [en]

    A novel technique is developed to follow the energetic position of the conduction and valence bands with respect to the Fermi level as a function of the lateral position on semiconductor surfaces. By combining high-resolution scanning-tunneling spectroscopy measurements with model calculations it is possible to relate the apparent change in conduction and valence band position to their real counterparts. This method allows one to determine the charge on surface artifacts like steps or vacancies, For a single step on p-type GaAs we find a charge of 0.9+/-0.3q nm(-1). (C) 2002 Elsevier Science B.V. All rights reserved.

  • 9.
    Larsson, Mats
    et al.
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Elfving, Anders
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Surface and Semiconductor Physics .
    Holtz, Per-Olof
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Hansson, Göran
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Surface and Semiconductor Physics .
    Ni, Wei-Xin
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Surface and Semiconductor Physics .
    Luminescence study of Si/Ge quantum dots2003In: Physica. E, Low-Dimensional systems and nanostructures, ISSN 1386-9477, E-ISSN 1873-1759, Vol. 16, no 3-4, 476-480 p.Article in journal (Refereed)
    Abstract [en]

    We present a photoluminescence (PL) study of Ge quantum dots embedded in Si. Two different types of recombination processes related to the Ge quantum dots are observed in temperature-dependent PL measurements. The Ge dot-related luminescence peak near 0.80 eV is ascribed to the spatially indirect recombination in the type-II band lineup, while a high-energy peak near 0.85 eV has its origin in the spatially direct recombination. A transition from the spatially indirect to the spatially direct recombination is observed as the temperature is increased. The PL dependence of the excitation power shows an upshift of the Ge quantum dot emission energy with increasing excitation power density. The blueshift is ascribed to band bending at the type-II Si/Ge interface at high carrier densities. Comparison is made with results derived from measurements on uncapped samples. For these uncapped samples, no energy shifts due to excitation power or temperatures are observed in contrast to the capped samples.

  • 10.
    Lisesivdin, S. B.
    et al.
    Gazi University, Turkey .
    Atmaca, G.
    Gazi University, Turkey .
    Arslan, E.
    Bilkent University, Turkey .
    Cakmakyapan, S.
    Bilkent University, Turkey .
    Kazar, O.
    Bilkent University, Turkey .
    Butun, S.
    Bilkent University, Turkey Northwestern University, IL 60208 USA .
    ul-Hassan, Jawad
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Janzén, Erik
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Ozbay, E.
    Bilkent University, Turkey Bilkent University, Turkey Bilkent University, Turkey .
    Extraction and scattering analyses of 2D and bulk carriers in epitaxial graphene-on-SiC structure2014In: Physica. E, Low-Dimensional systems and nanostructures, ISSN 1386-9477, E-ISSN 1873-1759, Vol. 63, 87-92 p.Article in journal (Refereed)
    Abstract [en]

    Hall effect measurements of a graphene-on-SiC system were carried out as a function of temperature (1.8-200 K) at a static magnetic field (0.51) With the analysis of temperature dependent single-field Hall data with the Simple Parallel Conduction Extraction Method (SPCEM), bulk and two-dimensional (2D) carrier densities and mobilities were extracted successfully. Bulk carrier is attributed to SIC substrate and 2D carrier is attributed to the graphene layer. For each SPCEM extracted carrier data, relevant three-dimensional or 2D scattering analyses were performed. Each SPCEM extracted carrier data were explained with the related scattering analyses. A temperature independent mobility component, which may related to an interaction between graphene and SIC, was observed for both scattering analyses with the same mobility limiting value. With the SPCEM, effective ionized impurity concentration of SiC substrate, extracted 2D-mobility, and sheet carrier density of the graphene layer are calculated with using temperature dependent static magnetic field Hall data.

  • 11.
    Narayan, V.
    Nanotube initiative, Venture Zone, Universitetsholding, SE-583 30, Linkoping, Sweden.
    Proposed strategy to sort semiconducting nanotubes by band-gap2007In: Physica. E, Low-Dimensional systems and nanostructures, ISSN 1386-9477, E-ISSN 1873-1759, Vol. 36, no 1, 73-78 p.Article in journal (Refereed)
    Abstract [en]

    We propose a strategy that uses a tunable infra-red source and an alternating non-linear potential defined by an electrode to sort a suspension of assorted semiconducting nanotubes. The band-gap scales with the inverse of the nanotube diameter, hence the infra-red frequency can be tuned to create excitons in some of the nanotubes, these excitons will be polarized by the potential. Since, a polarized exciton is a dipole, the excited nanotubes will experience a net force and may then diffuse towards the electrode, unlike the other nanotubes. We discuss experimental parameters such as IR intensity, electrode design, and potential frequency for a pilot experiment to sort nanotubes with lengths ˜ 0.5 µ m. The basic physics of the system has been illustrated using a Hartree model applied to nanotubes with nanoscale lengths. The calculated exciton binding energy suddenly drops to zero and the force on the nanotube increases dramatically when the exciton disassociates as the nanotube moves towards the electrode. The quantum adiabatic theorem shows that excitons will be adiabatically polarized for potential frequencies typical for experiments ˜ 1 - 10 MHz. The analysis indicates that the manipulation of nanotubes with nanometer lengths requires nanoscale electrodes. © 2006 Elsevier B.V. All rights reserved.

  • 12.
    Paskov, Plamen
    et al.
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Holtz, Per-Olof
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Wongmanerod, S.
    Monemar, Bo
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Garcia, J.M.
    Materials Department, University of California, Santa Barbara, CA 93106, United States.
    Schoenfeld, W.V.
    Materials Department, University of California, Santa Barbara, CA 93106, United States.
    Petroff, P.M.
    Materials Department, University of California, Santa Barbara, CA 93106, United States.
    Auger processes in InAs self-assembled quantum dots2000In: Physica. E, Low-Dimensional systems and nanostructures, ISSN 1386-9477, E-ISSN 1873-1759, Vol. 6, no 1, 440-443 p.Article in journal (Refereed)
    Abstract [en]

    An experimental evidence of Auger-like excitation processes in InAs/GaAs quantum dots is demonstrated. Photoluminescence spectra of resonantly excited dots exhibit a rich satellite structure below the ground-state emission band. The energy position and the intensity distribution of the satellites are analyzed and an interpretation of the satellites as due to shake-up processes of the interacting careers in the higher quantum dot states is suggested.

  • 13.
    Shvartsburg, A.B.
    et al.
    Joint Institute of High Temperatures Russian Academy of Sciences.
    Marklund, M.
    Department of Physics Umeå University.
    Brodin, G.
    Department of Physics Umeå University.
    Stenflo, Lennart
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Theoretical Physics .
    Superluminal tunneling of microwaves in smoothly varying transmission lines2008In: Physica. E, Low-Dimensional systems and nanostructures, ISSN 1386-9477, E-ISSN 1873-1759, Vol. 78, 016601-1-016601-6 p.Article in journal (Refereed)
    Abstract [en]

     Tunneling of microwaves through a smooth barrier in a transmission line is considered. In contrast to standard wave barriers, we study the case where the dielectric permittivity is positive, and the barrier is caused by the inhomogeneous dielectric profile. It is found that reflectionless, superluminal tunneling can take place for waves with a finite spectral width. The consequences of these findings are discussed, and an experimental setup testing our predictions is proposed.

  • 14. Sirigu, L.
    et al.
    Weman, Helge
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
    Karlsson, Fredrik
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Oberli, D.Y.
    Rudra, A.
    Kapon, E.
    Optical emission from a V-groove quantum wire laser diode immersed in high magnetic fields2002In: Physica. E, Low-Dimensional systems and nanostructures, ISSN 1386-9477, E-ISSN 1873-1759, Vol. 13, 881- p.Article in journal (Refereed)
  • 15.
    Sonde, S.
    et al.
    CNR-IMM, Stradale primosole, Catania, Italy.
    Vecchio, C.
    CNR-IMM, Stradale primosole, Catania, Italy.
    Giannazzo, F.
    CNR-IMM, Stradale primosole, Catania, Italy.
    Yakimova, Rositsa
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Rimini, E.
    CNR-IMM, Stradale primosole, Catania, Italy.
    Effect of graphene/4H-SiC(0 0 0 1) interface on electrostatic properties in graphene2012In: Physica. E, Low-Dimensional systems and nanostructures, ISSN 1386-9477, E-ISSN 1873-1759, Vol. 44, no 6, 993-996 p.Article in journal (Refereed)
    Abstract [en]

    Electrostatic properties, quantum capacitance (Cq) and local density of states (LDOS) are evaluated for graphene on 4H-SiC(0 0 0 1) by measuring the local capacitance with Scanning Capacitance Spectroscopy (SCS). Two distinct samples were used for comparative study, viz., graphene exfoliated and deposited on 4H-SiC(0 0 0 1)—DG, and graphene grown epitaxially on 4H-SiC(0 0 0 1)—EG. We observed a distinctly lower screening length (rscr) and Cq while wider variations in the LDOS for EG. Such differences are attributed to the peculiar interface between EG/4H-SiC(0 0 0 1), which is known to be more or less defective having the presence of positive charges.

  • 16.
    Sundqvist, P A
    et al.
    Chalmers.
    Narayan, V
    Chalmers.
    Vincent, J
    Chalmers.
    Willander, Magnus
    Chalmers.
    Spherical quantum dot with added parabolic confinement as a nanoscale tunable radiation detector2002In: Physica. E, Low-Dimensional systems and nanostructures, ISSN 1386-9477, E-ISSN 1873-1759, Vol. 15, no 1, 27-32 p.Article in journal (Refereed)
    Abstract [en]

    We have calculated the optical absorption matrix elements for a spherical silicon quantum dot embedded in silicon dioxide with the addition of a parabolic potential which is used to tune the bound state energy levels. The photon absorption from the ground state to the excited states was calculated as a function of the parabolic potential curvature constant and the dot radius which varied between 2 and 6 nm. The results show that we can tune the wavelength in the entire visible range. Furthermore, the absorption cross section was found to change by several orders of magnitude with increasing parabolic potential curvature constant. For large parabolic curvature constant the transition move out of the visible range, and the number of allowed transition increased with the dot radius.

  • 17. Toropov, A. A.
    et al.
    Sorokin, S. V.
    Kuritsyn, K. A.
    Ivanov, S. V.
    Pozina, Galia
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Bergman, Peder
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Wagner, Matthias
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Chen, Weimin
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials.
    Monemar, Bo
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Waag, A.
    Yakovlev, D. R.
    Sas, C.
    Ossau, W.
    Landwehr, G.
    Magneto-photoluminescence studies of Cd(Mn)Se/Zn(Mn)Se diluted magnetic nanostructures2001In: Physica. E, Low-Dimensional systems and nanostructures, ISSN 1386-9477, E-ISSN 1873-1759, Vol. 10, no 1-3, 362-367 p.Article in journal (Refereed)
    Abstract [en]

    We report on cw and time-resolved photoluminescence (PL) studies of Cd(Mn)Se/Zn(Mn)Se diluted magnetic semiconductor nanostructures grown by molecular beam epitaxy. Excitonic PL intensity, decay time and Zeeman splitting have been studied systematically as a function of Cd(Mn)Se nominal thickness, Mn concentration and sample design. Wave function mapping has been performed, evidencing the formation of semi-magnetic quantum disk islands in the samples with thick enough Cd(Mn)Se insertions. ⌐ 2001 Elsevier Science B.V.

  • 18.
    Zhu, Q.
    et al.
    Ecole Polytechnique Fédérale de Lausanne .
    Karlsson, Fredrik
    Ecole Polytechnique Fédérale de Lausanne .
    Rudra, A.
    Ecole Polytechnique Fédérale de Lausanne .
    Pelucchi, E.
    Ecole Polytechnique Fédérale de Lausanne .
    Kapon, E.
    Ecole Polytechnique Fédérale de Lausanne .
    Quantum dot molecules realized with modulated quantum wire heterostructrues2008In: Physica. E, Low-Dimensional systems and nanostructures, ISSN 1386-9477, E-ISSN 1873-1759, Vol. 40, no 6, 1815-1818 p.Article in journal (Refereed)
    Abstract [en]

    We report on double-quantum dot (QD) molecules realized with modulated quantum wire (QWR) heterostructures by self-limiting growth of AlGaAs alloys in inverted tetrahedral pyramids. The QWR barriers connecting the dots facilitate the tunnel-coupling between the confined carriers. Evidences for the presence of such coupling are provided by conventional micro-photoluminescence measurements and theoretical modeling. Systematically tuning the relative QD sizes in the QD molecules reveals spectral line splitting consistent with the expected level splitting due to carrier hybridization. Prospects for extension of these structures to larger QD superlattices are discussed.

  • 19.
    Zozoulenko, Igor
    et al.
    Linköping University, The Institute of Technology. Linköping University, Department of Science and Technology.
    Sachrajda, A.S.
    Inst. for Microstructural Science, National Research Council, Montreal Road, Ottawa, Ont. K1A 0R6, Canada.
    Gould, C.
    Inst. for Microstructural Science, National Research Council, Montreal Road, Ottawa, Ont. K1A 0R6, Canada, Dépt. de Physique and CRPS, Université de Sherbrooke, Sherbrooke, Que. J1K 2R1, Canada.
    Berggren, Karl-Fredrik
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Theoretical Physics .
    Zawadzki, P.
    Inst. for Microstructural Science, National Research Council, Montreal Road, Ottawa, Ont. K1A 0R6, Canada.
    Feng, Y.
    Inst. for Microstructural Science, National Research Council, Montreal Road, Ottawa, Ont. K1A 0R6, Canada.
    Wasilewski, Z.
    Inst. for Microstructural Science, National Research Council, Montreal Road, Ottawa, Ont. K1A 0R6, Canada.
    Magnetoconductance of a few-electron open quantum dot2000In: Physica. E, Low-Dimensional systems and nanostructures, ISSN 1386-9477, E-ISSN 1873-1759, Vol. 6, no 1, 409-413 p.Article in journal (Refereed)
    Abstract [en]

    Magnetoconductance of a small open lateral dot is studied both theoretically and experimentally for the conditions when the dot contains down to approximately 15 electrons. We confirm the existence of a new regime for open dots in which the transport through the structure occurs through individual eigenstates of the corresponding closed dot. In particular, at low magnetic fields the characteristic features in the conductance are related to the underlying eigenspectrum shells. When the number of modes in the leads is reduced more detailed structures within the shells due to single eigenlevels becomes discernible. At higher fields Landau level condensation is evident as well as the crossing of levels collapsing to the different Landau levels.

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