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  • 1.
    Andrievskii, RA
    et al.
    Russian Acad Sci, Inst Problems Chem Phys, Chernogolovka 142432, Moscow Oblast, Russia Linkoping Univ, Dept Phys, Div Thin Film, S-581836 Linkoping, Sweden IP Bardin Cent Ferrous Met Res Inst, State Sci Ctr, Moscow 107005, Russia.
    Kalinnikov, GV
    Russian Acad Sci, Inst Problems Chem Phys, Chernogolovka 142432, Moscow Oblast, Russia Linkoping Univ, Dept Phys, Div Thin Film, S-581836 Linkoping, Sweden IP Bardin Cent Ferrous Met Res Inst, State Sci Ctr, Moscow 107005, Russia.
    Hellgren, N
    Russian Acad Sci, Inst Problems Chem Phys, Chernogolovka 142432, Moscow Oblast, Russia Linkoping Univ, Dept Phys, Div Thin Film, S-581836 Linkoping, Sweden IP Bardin Cent Ferrous Met Res Inst, State Sci Ctr, Moscow 107005, Russia.
    Sandstrom, P
    Shtanskii, DV
    Russian Acad Sci, Inst Problems Chem Phys, Chernogolovka 142432, Moscow Oblast, Russia Linkoping Univ, Dept Phys, Div Thin Film, S-581836 Linkoping, Sweden IP Bardin Cent Ferrous Met Res Inst, State Sci Ctr, Moscow 107005, Russia.
    Nanoindentation and strain characteristics of nanostructured boride/nitride films2000Inngår i: Physics of the solid state, ISSN 1063-7834, E-ISSN 1090-6460, Vol. 42, nr 9, s. 1671-1674Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    The hardness, elastic modulus, and elastic recovery of nanostructured boride/nitride films 1-2 mu m thick have been investigated by the nanoindentation technique under the maximum loads over a wide range (from 5 to 100 mN). It is demonstrated that only the hardness parameters remain constant at small loads (5-30 mN). The data obtained are discussed and compared with the parameters determined by other methods. (C) 2000 MAIK "Nauka/Interperiodica".

  • 2. Baikov, V.I.
    et al.
    Isaev, E.I.
    Korzhavyi, P.A.
    Vekilov, Y.K.
    Abrikosov, Igor
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Teoretisk Fysik.
    Ab initio studies of the energy characteristics and magnetic properties of point defects in GaAs2005Inngår i: Physics of the solid state, ISSN 1063-7834, E-ISSN 1090-6460, Vol. 47, s. 1831-1836Artikkel i tidsskrift (Fagfellevurdert)
  • 3.
    Belov, Maxim
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Teoretisk Fysik. Linköpings universitet, Tekniska högskolan. National University of Science and Technology MISIS, Russia.
    Syzdykova, A. B.
    National University of Science and Technology MISIS, Russia; Al Farabi Kazakh National University, Kazakhstan.
    Kh Vekilov, Yu
    National University of Science and Technology MISIS, Russia.
    Abrikosov, Igor
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Teoretisk Fysik. Linköpings universitet, Tekniska högskolan.
    Hydrogen in palladium: Anharmonicity of lattice dynamics from first principles2015Inngår i: Physics of the solid state, ISSN 1063-7834, E-ISSN 1090-6460, Vol. 57, nr 2, s. 260-265Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    The interaction potentials of the palladium and hydrogen sublattices at different hydrogen concentrations have been obtained in terms of the density functional theory and ab initio pseudopotentials. It has been shown that the anharmonicity of this interaction depends on the hydrogen concentration. The phonon spectrum of palladium hydride PdH has been calculated in the harmonic approximation and taking into account the anharmonic effects. The temperature-dependent effective potential technique accounting for the anharmonic effects of lattice vibrations has been described.

  • 4. Donchev, V.
    et al.
    Moskalenko, Evgenii
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi.
    Karlsson, K.F.
    Holtz, Per-Olof
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Materiefysik.
    Monemar, Bo
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Materiefysik.
    Schoenfeld, W.V.
    Materials Department, University of California, Santa Barbara, CA 93106, United States.
    Garcia, J.M.
    Institute de Microelectronica de Madrid, CNM-CSIC Isaak Newton 8, PTM 28760, Tres Cantos, Madrid, Spain.
    Petroff, P.M.
    Materials Department, University of California, Santa Barbara, CA 93106, United States.
    Enhancement of the photoluminescence intensity of a single InAs/GaAs quantum dot by separate generation of electrons and holes2006Inngår i: Physics of the solid state, ISSN 1063-7834, E-ISSN 1090-6460, Vol. 48, nr 10, s. 1993-1999Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    It is demonstrated that the microphotoluminescence (µPL) spectrum of a single InAs/GaAs self-assembled quantum dot (QD) undergoes considerable changes when the primary laser excitation is complemented with an additional infrared laser. The primary laser, tuned slightly below the GaAs band gap, provides electron-hole pairs in the wetting layer (WL), as well as excess free electrons from ionized shallow acceptors in the GaAs barriers. An additional IR laser with a fixed energy well below the QD ground state transition generates excess free holes from deep levels in GaAs. The excess electron and hole will experience diffusion separately, due to the time separation between the two events of their generation, to eventually become captured into the QD. Although the generation rates of excess carries are much lower than that of the electron-hole pair generation in the WL, they considerably influence the QD emission at low temperatures. The integrated PL intensity increases by several times as compared to single-laser excitation, and the QD exciton spectrum is redistributed in favor of a more neutral charge configuration. The dependence of the observed phenomenon on the powers of the two lasers and the temperature has been studied and is consistent with the model proposed. The concept of dual excitation could be successfully applied to different low-dimensional semiconductor structures in order to manipulate their charge state and emission intensity. © Nauka/Interperiodica 2006.

  • 5.
    Mikhailov, T. N.
    et al.
    Ioffe Inst, Russia; St Petersburg Acad Univ, Russia.
    Evropeitsev, E. A.
    Ioffe Inst, Russia.
    Belyaev, K. G.
    Ioffe Inst, Russia.
    Toropov, A. A.
    Ioffe Inst, Russia.
    Rodina, A. V.
    Ioffe Inst, Russia.
    Golovatenko, A. A.
    Ioffe Inst, Russia.
    Ivanov, S. V.
    Ioffe Inst, Russia.
    Pozina, Galia
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Shubina, T. V.
    Ioffe Inst, Russia.
    Forster Energy Transfer in Arrays of Epitaxial CdSe/ZnSe Quantum Dots Involving Bright and Dark Excitons2018Inngår i: Physics of the solid state, ISSN 1063-7834, E-ISSN 1090-6460, Vol. 60, nr 8, s. 1590-1594Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    Using time-resolved photoluminescence (PL) spectroscopy, we establish the presence of the Forster energy transfer mechanism between two arrays of epitaxial CdSe/ZnSe quantum dots (QDs) of different sizes. The mechanism operates through dipole-dipole interaction between ground excitonic states of the smaller QDs and excited states of the larger QDs. The dependence of energy transfer efficiency on the width of barrier separating the QD insets is shown to be in line with the Forster mechanism. The temperature dependence of the PL decay times and PL intensity suggests the involvement of dark excitons in the energy transfer process.

  • 6.
    Moskalenko, Evgenii
    et al.
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi.
    Karlsson, K.Fredrik
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Materiefysik. Linköpings universitet, Tekniska högskolan.
    Donchev, V.
    Faculty of Physics, Sofia University, Sofia, 1164, Bulgaria.
    Holtz, Per-Olof
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Materiefysik.
    Schoenfeld, W.V.
    Department of Materials, University of California, Santa Barbara, CA 93106, United States.
    Petroff, P.M.
    Department of Materials, University of California, Santa Barbara, CA 93106, United States.
    Effect of an electric field on the carrier collection efficiency of InAs quantum dots2005Inngår i: Physics of the solid state, ISSN 1063-7834, E-ISSN 1090-6460, Vol. 47, nr 11, s. 2154-2161Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    Individual and multiquantum dots of InAs are studied by means of microphotoluminescence in the case where, in addition to the principal laser exciting photoluminescence, second infrared laser is used. It is demonstrated that the absorption of the infrared photons effectively creates free holes in the sample, which leads to both a change in the charge state of a quantum dot and to a considerable reduction of their photoluminescence signal. The latter effect is explained in terms of effective screening of the internal electric field, facilitating carrier transport along the plane of a wetting layer, by the surplus holes from the infrared laser. It is shown that the effect of quenching of quantum dot photoluminescence gradually disappears at increased sample temperature (T) and/or dot density. This fact is due to the essentially increased value of quantum dot collection efficiency, which could be achieved at elevated sample temperatures for individual quantum dots or even at low T for the case of multiquantum dots. It is suggested that the observed phenomena can be widely used in practice to effectively manipulate the collection efficiency and the charge state of quantum-dot-based optical devices. © 2005 Pleiades Publishing, Inc.

  • 7.
    Moskalenko, Evgenii
    et al.
    Linköpings universitet, Institutionen för medicinsk teknik. Linköpings universitet, Tekniska högskolan.
    Larsson, Mats
    Linköpings universitet, Institutionen för medicinsk teknik. Linköpings universitet, Tekniska högskolan.
    Karlsson, Fredrik
    Linköpings universitet, Institutionen för medicinsk teknik. Linköpings universitet, Tekniska högskolan.
    Holtz, Per-Olof
    Linköpings universitet, Institutionen för medicinsk teknik. Linköpings universitet, Tekniska högskolan.
    Monemar, Bo
    Linköpings universitet, Institutionen för medicinsk teknik. Linköpings universitet, Tekniska högskolan.
    Schoenfeld, W.V.
    Materials Department, University of California, Santa Barbara, United States.
    Petroff, P.M.
    Materials Department, University of California, Santa Barbara, United States.
    The effect of the external lateral electric field on the luminescence intensity of InAs/GaAs quantum dots2007Inngår i: Physics of the solid state, ISSN 1063-7834, E-ISSN 1090-6460, Vol. 49, nr 10, s. 1995-1998Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    We report on low-temperature microphotoluminescence (μ-PL) measurements of InAs/GaAs quantum dots (QDs) exposed to a lateral external electric field. It is demonstrated that the QDs’ PL signal could be increased severalfold by altering the external and/or the internal electric field, which could be changed by an additional infrared laser. A model which accounts for a substantially faster lateral transport of the photoexcited carriers achieved in an external electric field is employed to explain the observed effects. The results obtained suggest that the lateral electric fields play a major role for the dot luminescence intensity measured in our experiment—a finding which could be used to tailor the properties of QD-based optoelectronic applications.

  • 8.
    Toropov, A. A.
    et al.
    Russian Academic Science, Russia.
    Shevchenko, E. A.
    Russian Academic Science, Russia.
    Shubina, T. V.
    Russian Academic Science, Russia.
    Jmerik, V. N.
    Russian Academic Science, Russia.
    Nechaev, D. V.
    Russian Academic Science, Russia.
    Pozina, Galia
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Ivanov, S. V.
    Russian Academic Science, Russia.
    AlGaN nanostructures with extremely high quantum yield at 300 K2016Inngår i: Physics of the solid state, ISSN 1063-7834, E-ISSN 1090-6460, Vol. 58, nr 11, s. 2261-2266Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    Theoretical optimization of a quantum well heterostructure based on AlGaN solid solutions is implemented in order to attain the maximum charge carrier activation energy and the maximum exciton binding energy at a radiation wavelength of similar to 300 nm. An optimized structure sample with the radiative recombination dominating over the temperature range of 5 to 300 K and the room temperature internal quantum yield as high as 80% of the value measured at 5 K has been manufactured via plasma-assisted molecular beam epitaxy.

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