liu.seSearch for publications in DiVA
Change search
Refine search result
1 - 15 of 15
CiteExportLink to result list
Permanent link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Rows per page
  • 5
  • 10
  • 20
  • 50
  • 100
  • 250
Sort
  • Standard (Relevance)
  • Author A-Ö
  • Author Ö-A
  • Title A-Ö
  • Title Ö-A
  • Publication type A-Ö
  • Publication type Ö-A
  • Issued (Oldest first)
  • Issued (Newest first)
  • Created (Oldest first)
  • Created (Newest first)
  • Last updated (Oldest first)
  • Last updated (Newest first)
  • Disputation date (earliest first)
  • Disputation date (latest first)
  • Standard (Relevance)
  • Author A-Ö
  • Author Ö-A
  • Title A-Ö
  • Title Ö-A
  • Publication type A-Ö
  • Publication type Ö-A
  • Issued (Oldest first)
  • Issued (Newest first)
  • Created (Oldest first)
  • Created (Newest first)
  • Last updated (Oldest first)
  • Last updated (Newest first)
  • Disputation date (earliest first)
  • Disputation date (latest first)
Select
The maximal number of hits you can export is 250. When you want to export more records please use the Create feeds function.
  • 1.
    Agekyan, V F
    et al.
    St Petersburg State University.
    Holtz, Per-Olof
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Karczewski, G
    Polish Academy of Science.
    N Katz, V
    St Petersburg State University.
    Moskalenko, E S
    Russian Academy of Science.
    Yu Serov, A
    St Petersburg State University.
    Filosofov, N G
    St Petersburg State University.
    Magnetoluminescence of CdTe/MnTe/CdMgTe heterostructures with ultrathin MnTe layers2011In: Semiconductors (Woodbury, N.Y.), ISSN 1063-7826, E-ISSN 1090-6479, Vol. 45, no 10, p. 1301-1305Article in journal (Refereed)
    Abstract [en]

    CdTe/MnTe/CdMgTe quantum-well structures with one or two monolayers of MnTe inserted at CdTe/CdMgTe interfaces were fabricated. The spectra of the excitonic luminescence from CdTe quantum wells and their variation with temperature indicate that introduction of ultrathin MnTe layers improves the interface quality. The effect of a magnetic field in the Faraday configuration on the spectral position of the exciton-emission peaks indicates that frustration of magnetic moments in one-monolayer MnTe insertions is weaker than in two-monolayer insertions. The effect of a magnetic field on the exciton localization can be explained in terms of the exciton wave-function shrinkage and obstruction of the photoexcited charge-carrier motion in the quantum well.

  • 2.
    Averkiev, N S
    et al.
    Russian Academy of Science .
    Golub, L E
    Russian Academy of Science .
    Willander, Magnus
    Chalmers.
    Spin relaxation in asymmetrical heterostructures2002In: Semiconductors (Woodbury, N.Y.), ISSN 1063-7826, E-ISSN 1090-6479, Vol. 36, no 1, p. 91-97Article in journal (Refereed)
    Abstract [en]

    Electron spin relaxation by the Dyakonov-Perel mechanism is investigated theoretically in asymmetrical III-V heterostructures. Spin relaxation anisotropy for all three dimensions is demonstrated for a wide range of structural parameters and temperatures. Dependences of spin relaxation rates are obtained both for a GaAs-based heterojunctions and triangular quantum wells. The calculations show a several-orders-of-magnitude difference between spin relaxation times for heterostructure parameters realized in experiments.

  • 3.
    Davydov, S.Yu.
    et al.
    Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg 194021, Russian Federation.
    Lebedev, A.A.
    Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg 194021, Russian Federation.
    Savkina, N.S.
    Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg 194021, Russian Federation.
    Syväjärvi, Mikael
    Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
    Yakimova, Rositsa
    Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
    A Simple Model for Calculating the Growth Rate of Epitaxial Layers of Silicon Carbide in Vacuum2004In: Semiconductors (Woodbury, N.Y.), ISSN 1063-7826, E-ISSN 1090-6479, Vol. 38, no 2, p. 150-152Article in journal (Refereed)
    Abstract [en]

    The temperature dependence of the growth rate of epitaxial layers of silicon carbide in vacuum was calculated within the simple model based on the Hertz-Knudsen equation, taking into account the temperature-dependent sticking coefficient. The calculation results fit the experimental data well. © 2004 MAIK "Nauka/Interperiodica".

  • 4.
    Gubaydullin, A. R.
    et al.
    St Petersburg Acad Univ, Russia; Univ Claude Bernard Lyon 1, France.
    Symonds, C.
    Univ Claude Bernard Lyon 1, France.
    Bellessa, J.
    Univ Claude Bernard Lyon 1, France.
    Ivanov, K. A.
    St Petersburg Acad Univ, Russia; ITMO Univ, Russia.
    Kolykhalova, E. D.
    St Petersburg Acad Univ, Russia; Ioffe Inst, Russia; St Petersburg Sci Ctr, Russia.
    Sasin, M. E.
    Ioffe Inst, Russia.
    Pozina, Galia
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Kaliteevski, M. A.
    St Petersburg Acad Univ, Russia; ITMO Univ, Russia; Ioffe Inst, Russia.
    Purcell Effect in Tamm Plasmon Structures with QD Emitter2018In: Semiconductors (Woodbury, N.Y.), ISSN 1063-7826, E-ISSN 1090-6479, Vol. 52, no 4, p. 452-457Article in journal (Refereed)
    Abstract [en]

    We study Tamm plasmon structure based on GaAs/Al0.95GaAs distributed Bragg reflector covered by thin silver layer, with active area formed by InAs quantum dots. We have measured the spectral and angular characteristics of photoluminescence and performed theoretical calculation of the spontaneous emission rate (modal Purcell factor) in the structure by using S-quantization formalism. We show that for Tamm plasmon mode the spontaneous emission can be enhanced by more than an order of magnitude, despite absorption in metallic layer.

  • 5.
    Jmerik, V. N.
    et al.
    Ioffe Inst, Russia.
    Shubina, T. V.
    Ioffe Inst, Russia.
    Nechaev, D. V.
    Ioffe Inst, Russia.
    Semenov, A. N.
    Ioffe Inst, Russia.
    Kirilenko, D. A.
    Ioffe Inst, Russia.
    Davydov, V. Yu.
    Ioffe Inst, Russia.
    Smirnov, A. N.
    Ioffe Inst, Russia.
    Eliseev, I. A.
    Ioffe Inst, Russia.
    Pozina, Galia
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Ivanov, S. V.
    Ioffe Inst, Russia.
    Site-Controlled Growth of GaN Nanorods with Inserted InGaN Quantum Wells on mu-Cone Patterned Sapphire Substrates by Plasma-Assisted MBE2018In: Semiconductors (Woodbury, N.Y.), ISSN 1063-7826, E-ISSN 1090-6479, Vol. 52, no 5, p. 667-670Article in journal (Refereed)
    Abstract [en]

    We report on a new approach to fabricate regular arrays of GaN nanorods (NRs) with InGaN QWs by plasma-assisted molecular-beam epitaxy (PA MBE) on micro-cone patterned sapphire substrates (mu-CPSSs). A two-stage PA MBE fabrication process of GaN NRs has been developed, starting with a high temperature nucleation layer growth at metal-rich conditions to aggregate selectively GaN nucleus on c-oriented areas of the mu-CPSSs and followed by growth of 1-mu m-thick GaN NRs at strongly nitrogen-rich conditions exactly on the cone tips. These results are explained by energetically favorable GaN growth on the (000 (1) over bar) oriented sapphire surface. Both micro-photoluminescence and micro-cathodoluminescence confirm the formation of regular array of optically and spectrally isolated NRs without usage of any nanolithography.

  • 6.
    Lebedev, A.A.
    et al.
    Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg 194021, Russian Federation.
    Kozlovski, V.V.
    St. Petersburg State Technical Univ., St. Petersburg 195251, Russian Federation.
    Strokan, N.B.
    Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg 194021, Russian Federation.
    Davydov, D.V.
    Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg 194021, Russian Federation.
    Ivanov, A.M.
    Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg 194021, Russian Federation.
    Strel'chuk, A.M.
    Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg 194021, Russian Federation.
    Yakimova, Rositsa
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Radiation hardness of wide-gap semiconductors (using the example of silicon carbide)2002In: Semiconductors (Woodbury, N.Y.), ISSN 1063-7826, E-ISSN 1090-6479, Vol. 36, no 11, p. 1270-1275Article in journal (Refereed)
    Abstract [en]

    Results obtained in studying the effect of ionizing radiation on epitaxial layers and devices based on silicon carbide (SiC) are considered. It is shown that, in investigations of wide-gap semiconductors (WGS), account should be taken of how the rate of removal of mobile charge carriers - the standard parameter in determining the radiation hardness of a material - depends on temperature. The use of data obtained only at room temperature may lead to an incorrect assessment of the radiation hardness of WGS. A conclusion is made that the WGS properties combine, on the one hand, high radiation hardness of high-temperature devices based on these semiconductors and, on the other, the possibility of effective radiation-induced doping (e.g., for obtaining semi-insulating local regions in a material at room temperature). © 2002 MAIK "Nauka/Interperiodica".

  • 7.
    Lebedev, Alexander
    et al.
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
    Davydov, DV
    Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia Linkoping Univ, S-58183 Linkoping, Sweden.
    Savkina, NS
    Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia Linkoping Univ, S-58183 Linkoping, Sweden.
    Tregubova, AS
    Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia Linkoping Univ, S-58183 Linkoping, Sweden.
    Shcheglov, MP
    Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia Linkoping Univ, S-58183 Linkoping, Sweden.
    Yakimova, Rositsa
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Syväjärvi, Mikael
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Janzén, Erik
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Structural defects and deep-level centers in 4H-SiC epilayers grown by sublimational epitaxy in vacuum2000In: Semiconductors (Woodbury, N.Y.), ISSN 1063-7826, E-ISSN 1090-6479, Vol. 34, no 10, p. 1133-1136Article in journal (Refereed)
    Abstract [en]

    The parameters of deep-level centers in lightly doped 4H-SiC epilayers grown by sublimational epitaxy and CVD were investigated. Two deep-level centers with activation energies E-c - 0.18 eV and E-c - 0.65 eV (Z1 center) were observed and tentatively identified with structural defects of the SiC crystal lattice. The Z1 center concentration is shown to fall with decreasing uncompensated donor concentration N-d - N-a in the layers. For the same N-d - N-a, the Z1 center concentration is lower in layers with a higher dislocation density. (C) 2000 MAIK "Nauka/Interperiodica".

  • 8.
    Lebedev, Alexander
    et al.
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
    Zelenin, V.V.
    Abramov, P.L.
    Bogdanova, E.V.
    Lebedev, S.P.
    Nel¿son, D.K.
    Razbirin, B.S.
    Shcheglov, M.P.
    Tregubova, A.S.
    Syväjärvi, Mikael
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Yakimova, Rositsa
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    A study of thick 3C-SiC epitaxial layers grown on 6H-SiC substrates by sublimation epitaxy in vacuum2007In: Semiconductors (Woodbury, N.Y.), ISSN 1063-7826, E-ISSN 1090-6479, Vol. 41, no 3, p. 263-265Article in journal (Refereed)
    Abstract [en]

    3C-SiC epitaxial layers with a thickness of up to 100 μm were grown on 6H-SiC hexagonal substrates by sublimation epitaxy in vacuum. The n-type epitaxial layers with the area in the range 0.3-0.5 cm2 and uncompensated donor concentration N d - N a ∼ (10 17-1018) cm-3 were produced at maximum growth rates of up to 200 μm/h. An X-ray analysis demonstrated that the epitaxial layers are composed of the 3C-SiC polytype, without inclusions of other polytypes. The photoluminescence (PL) spectrum of the layers was found to be dominated by the donor-acceptor (Al-N) recombination band peaked at hv ≈ 2.12 eV. The PL spectrum measured at 6 K was analyzed in detail. It is concluded that the epitaxial layers obtained can serve as substrates for 3C-SiC-based electronic devices. © Nauka/Interperiodica 2007.

  • 9.
    Pozina, Galia
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Kaliteevski, M. A.
    St Petersburg Natl Res Acad Univ, Russia; Ioffe Inst, Russia; ITMO Univ, Russia.
    Nikitina, E. V.
    St Petersburg Natl Res Acad Univ, Russia; Ioffe Inst, Russia.
    Gubaidullin, A. R.
    St Petersburg Natl Res Acad Univ, Russia; ITMO Univ, Russia.
    Ivanov, K. A.
    St Petersburg Natl Res Acad Univ, Russia; ITMO Univ, Russia.
    Egorov, A. Yu.
    Ioffe Inst, Russia; ITMO Univ, Russia.
    Experimental Study of Spontaneous Emission in Bragg Multiple- Quantum-Well Structures with InAs Single-Layer Quantum Wells2018In: Semiconductors (Woodbury, N.Y.), ISSN 1063-7826, E-ISSN 1090-6479, Vol. 52, no 7, p. 877-880Article in journal (Refereed)
    Abstract [en]

    The time-resolved photoluminescence of a Bragg structure formed by InAs single-layer quantum wells in a GaAs matrix is investigated experimentally. The comparison of photoluminescence spectra recorded from the edge and the surface of the sample indicates that Bragg ordering of the quantum wells leads to substantial modification of the spectra, in particular, to the appearance of additional modes. The spectrum recorded at the edge of the sample features a single line corresponding to the exciton ground state. In the spectrum recorded at the surface, an additional line whose frequency and propagation angle correspond to the Bragg condition for quantum wells, appears at high excitation levels. The calculation of the modal Purcell factor explains the fact that spontaneous emission is enhanced only for specific propagation angles and frequencies, rather than for all angles and frequencies satisfying the Bragg condition.

  • 10.
    Strokan, N.B.
    et al.
    Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg 194021, Russian Federation.
    Ivanov, A.M.
    Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg 194021, Russian Federation.
    Boiko, M.E.
    Boiko, M.E., Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg 194021, Russian Federation.
    Savkina, N.S.
    Savkina, N.S..
    Strel'chuk, A.M.
    Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg 194021, Russian Federation.
    Lebedev, A.A.
    Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg 194021, Russian Federation.
    Yakimova, Rositsa
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Silicon carbide transistor structures as detectors of weakly ionizing radiation2003In: Semiconductors (Woodbury, N.Y.), ISSN 1063-7826, E-ISSN 1090-6479, Vol. 37, no 1, p. 65-69Article in journal (Refereed)
    Abstract [en]

    SiC-based nuclear radiation detectors figured prominently in the very first attempts of the 1960s to replace gas in ionization chambers with a more condensed semiconducting medium. However, the dynamics of improvement of SiC in those years was markedly inferior to the progress made in the development of competing materials. This study continues with the investigation of triode detector structures based on "pure" SiC films. It is established that for weakly ionizing radiation (as also in the case of strongly ionizing alpha particles) the signal is amplified by no less than a factor of several tens. This allows SiC films with a thickness of about 10 µm to be used to detect penetrating radiation, e.g., X-rays, since the effective thickness of the films is on the order of hundreds of micrometers. © 2003 MAIK "Nauka/Interperiodica".

  • 11.
    Strokan, N.B.
    et al.
    Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russian Federation.
    Ivanov, A.M.
    Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russian Federation.
    Lebedev, A.A.
    Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russian Federation.
    Syväjärvi, Mikael
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Yakimova, Rositsa
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Measurement of micrometer diffusion lengths by nuclear spectrometry2005In: Semiconductors (Woodbury, N.Y.), ISSN 1063-7826, E-ISSN 1090-6479, Vol. 39, no 12, p. 1394-1398Article in journal (Refereed)
    Abstract [en]

    A method for determination of diffusion lengths in the range 0.5-50 µm, which corresponds to carrier lifetimes in the nanosecond range, is suggested A calibrated nonequilibrium charge is injected into the base of the reverse-biased diode structure. The injection is provided by alpha particles generated by natural decay in the single-particle counting mode. The nuclear spectrometry technique is used to measure the amount of charge that diffused across the base to the boundary of the electric-field region. The loss of charge during the diffusion is calculated as a function of the depth of alpha particle penetration beyond the electric-field region. The derived power-law functions make it possible to relate the diffusion length with the exponent and numerical factor that describes the loss of charge. The experiment is performed with lightly doped 4H-SiC epitaxial films. © 2005 Pleiades Publishing, Inc.

  • 12.
    Strokan, N.B.
    et al.
    Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russian Federation.
    Ivanov, A.M.
    Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russian Federation.
    Lebedev, A.A.
    Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russian Federation.
    Syväjärvi, Mikael
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Yakimova, Rositsa
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    The limiting energy resolution of SiC detectors in ion spectrometry2005In: Semiconductors (Woodbury, N.Y.), ISSN 1063-7826, E-ISSN 1090-6479, Vol. 39, no 12, p. 1420-1425Article in journal (Refereed)
    Abstract [en]

    The Monte Carlo method is used to simulate the complete stopping of a particles in SiC. A histogram of energy losses in nuclear-scattering events is obtained. The energy-loss spectrum has the characteristic asymmetric shape with the line full width at the half-maximum FWHMnucl ˜ 4. 22 keV. The final shape of the spectral line is obtained by a convolution with the Gaussian function that describes the contribution of the ionization and noise fluctuations (originated in the detector and instrumentation) to the signal. The resulting value of FWHM for the line is equal to 8.75 keV (at a noise variance of 1.7 keV). The experimental energy resolution of the detectors was found to be poorer than the calculated value by a factor of 2. It is established that the losses of charge during its transport in the detector bulk are insignificant, so that the discrepancy between the calculated and experimental values of the resolution should be attributed to the nonoptimal design of the detector window. © 2005 Pleiades Publishing, Inc.

  • 13.
    Strokan, N.B.
    et al.
    Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russian Federation.
    Ivanov, A.M.
    Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russian Federation.
    Savkina, N.S.
    Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russian Federation.
    Lebedev, A.A.
    Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russian Federation.
    Kozlovskii, V.V.
    Kozlovskii, V.V., St. Petersburg Polytech. University, Politekhnicheskaya ul. 29, St. Petersburg, 195251, Russian Federation.
    Syväjärvi, Mikael
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Yakimova, Rositsa
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Radiation resistance of transistor- and diode-type SiC detectors irradiated with 8-MeV protons2004In: Semiconductors (Woodbury, N.Y.), ISSN 1063-7826, E-ISSN 1090-6479, Vol. 38, no 7, p. 807-811Article in journal (Refereed)
    Abstract [en]

    Nuclear-particle detectors based on SiC with a structure composed of an n+-type substrate, a p-type epitaxial layer, and a Schottky barrier are studied. Structures with a ~10-µm-thick 6H-SiC layer exhibit transistor properties, whereas those with a ~30-µm-thick 4H-SiC layer exhibit diode properties. It is established that a more than tenfold amplification of the signal is observed in the transistor-type structure. The amplification is retained after irradiation with 8-MeV protons with a dose of at least 5 × 1013 cm-2, in this case, the resolution is =10%. Amplification of the signal was not observed in the structures of diode type. However, there were diode-type detectors with a resolution of ˜3%, which is acceptable for a number of applications, even after irradiation with the highest dose of 2 × 1014 cm-2. © 2004 MAIK "Nauka/Interperiodica".

  • 14.
    Tkachman, M.G.
    et al.
    Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg 194021, Russian Federation.
    Shubina, T.V.
    Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg 194021, Russian Federation.
    Jmerik, V.N.
    Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg 194021, Russian Federation.
    Ivanov, S.V.
    Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg 194021, Russian Federation.
    Kop'ev, P.S.
    Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg 194021, Russian Federation.
    Paskova, Tanja
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
    Monemar, Bo
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Phonon-assisted exciton luminescence in GaN layers grown by MBE and chloride-hydride VPE2003In: Semiconductors (Woodbury, N.Y.), ISSN 1063-7826, E-ISSN 1090-6479, Vol. 37, no 5, p. 532-536Article in journal (Refereed)
    Abstract [en]

    Optical properties of GaN layers grown by the molecular-beam epitaxy (MBE) and chloride-hydride vapor-phase epitaxy (CHVPE) have been studied, and the quality of two types of samples has been compared. The photoluminescence spectra have an excitonic nature for both types of layers. To determine precisely the nature of exciton transitions, the reflectance spectra were studied. A key point was the investigation of phonon-assisted exciton luminescence, which provides information on the density distribution of the exciton states. Temperature dependences of the exciton transition energy and the ratio of intensities of one- and two-phpnon replicas were studied. The high quality of both types of layers has been confirmed, though the concentration of acceptors in MBE-grown samples is higher than in CHVPE samples. © 2003 MAIK "Nauka/Interperiodica".

  • 15. Toropov, A. A.
    et al.
    Lebedev, A. V.
    Sorokin, S. V.
    Solnyshkov, D. D.
    Ivanov, S. V.
    Kopev, P. S.
    Buyanova, Irina
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials.
    Chen, Weimin
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials.
    Monemar, Bo
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    ZnMnSe/ZnSSe Type-II semimagnetic superlattices: Growth and magnetoluminescence properties2002In: Semiconductors (Woodbury, N.Y.), ISSN 1063-7826, E-ISSN 1090-6479, Vol. 36, no 11, p. 1288-1293Article in journal (Refereed)
    Abstract [en]

    A ZnSSe/ZnMnSe type-II semimagnetic superlattice was pseudomorphically grown via molecular beam epitaxy on a GaAs substrate. The superlattice-layer thicknesses and compositions were chosen so that compressive strains in the ZnMnSe layer compensated tensile strains in the ZnSSe layer. The photoluminescence spectra in an external magnetic field demonstrate the effect of giant Zeeman splitting of an exciton. Simulation of the luminescence-line shift in a magnetic field allowed us to determine more accurately the band offsets at the ZnSSe/ZnMnSe interface.

1 - 15 of 15
CiteExportLink to result list
Permanent link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf