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  • 1.
    Barannikova, S A
    et al.
    Russian Academy of Science.
    Ponomareva, A V
    Moscow Steel and Alloys Institute.
    Zuev, L B
    Russian Academy of Science.
    Vekilov, Yu Kh
    Moscow Steel and Alloys Institute.
    Abrikosov, Igor
    Linköping University, Department of Physics, Chemistry and Biology, Theoretical Physics. Linköping University, The Institute of Technology.
    Significant correlation between macroscopic and microscopic parameters for the description of localized plastic flow auto-waves in deforming alloys2012In: Solid State Communications, ISSN 0038-1098, E-ISSN 1879-2766, Vol. 152, no 9, p. 784-787Article in journal (Refereed)
    Abstract [en]

    Understanding of mechanical properties of materials and a possibility to predicting them from ab initio calculations have fundamental importance for solid state theory. In this work we establish a significant correlation between the product of the macroscopic parameters of localized plastic flow auto-waves in deforming alloys, their length and propagation rate and the product of the microscopic (lattice) parameters of these materials, the spacing between close-packed planes of the lattice and the rate of transverse elastic waves. Thus, these products can be regard as invariants of plastic and elastic deformation processes, respectively. Moreover, the established regularity suggests that the elastic and the plastic processes simultaneously involved in the deformation are closely related. Our work also demonstrates that ab initio simulations can be used for the prediction of parameters of localized plastic flow auto-waves in deforming alloys.

  • 2.
    Chen, K.
    et al.
    Nanjing University, Peoples R China.
    Liu, Y. F.
    Nanjing University, Peoples R China.
    Gao, Feng
    Linköping University, Department of Physics, Chemistry and Biology, Biomolecular and Organic Electronics. Linköping University, The Institute of Technology.
    Du, Z. L.
    Nanjing University, Peoples R China.
    Liu, J. M.
    Nanjing University, Peoples R China.
    Ying, X. N.
    Nanjing University, Peoples R China.
    Lu, X. M.
    Nanjing University, Peoples R China.
    Zhu, J. S.
    Nanjing University, Peoples R China.
    Ti deficiency effect on the dielectric response of CaCu3Ti4O12 ceramics2007In: Solid State Communications, ISSN 0038-1098, E-ISSN 1879-2766, Vol. 141, no 8, p. 440-444Article in journal (Refereed)
    Abstract [en]

    Single phase ceramics CaCu3Ti4.0O12 and CaCu3Ti3.9O12 have been prepared using the traditional solid-state reaction method. Compared with the stoichiometric ceramics CaCu3Ti4.0O12, Ti-deficient ceramics CaCu3Ti3.9O12 have the larger lattice parameter, the higher force constant, and smaller dielectric constant and the lower dissipation factor, although their fundamental characters of dielectric response are similar. Their characteristic relaxation frequencies are not well fitted with the Arrhenius Law but a tentatively supposed relation. With the Cole-Cole Law, the fitted broadened factors of dissipation peaks are 0.5433 and 0.8651 for CaCu3Ti3.9O12 and CaCu3Ti4.0O12, respectively. All facts mentioned above imply that mutually correlated motion of Ti ions or defects may be expected to be responsible for the giant dielectric constant and high dissipation factor of CaCu3T4.0O12. (c) 2006 Elsevier Ltd. All rights reserved.

  • 3.
    Fahlman, Mats
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Surface Physics and Chemistry .
    Symposium on polymer electronics and nanotechnology, 20062007In: Solid State Communications, ISSN 0038-1098, E-ISSN 1879-2766, Vol. 142, no 1-2, p. 120-122Article in journal (Refereed)
    Abstract [en]

    An international symposium on polymer electronics and general nanotechnology was held in Linkoping, Sweden on August 17 August 19, 2006. The topics that were featured in the symposium include synthetic chemistry, electronic structure, and charge transport and devices. The developments in polymer electronics and nanotechnology that were described by invited speakers who are internationally recognized leaders in their respective areas are discussed. Commercial areas focused for include polymer based light emitting devices (P-LED) for laptop and TV-type display, and polymer-based transistor circuits. The use of modern synchrotron radiation techniques in nanotechnology in general and organic electronics was one of the main themes of the symposium. Polymer-based transistors comprise another area of importance in polymer electronics, where low cost consumer-oriented electronic applications are expected to dominate conventional inorganic electronics.

  • 4.
    Ferreira, Da Silva A.
    et al.
    Ferreira Da Silva, A., Laboratório Associado de Sensores e Materiais (LAS), Instituto Nacional de Pesquisas Espaciais-INPE, Cx. Postal 515, 12201-970, S.J. dos Campos, SP, Brazil.
    Rosa, R.R.
    Laboratório de Computção e Matemática Aplicada (LAC), Instituto Nacional de Pesquisas Espaciais-INPE, Cx. Postal 515, 12201-970, S.J. dos Campos, SP, Brazil.
    Roman, L.S.
    Laboratory of Applied Physics, Department of Physics, Linkoping University, 5-58183 Linkoping, Sweden.
    Veje, E.
    Oersted Laboratory, Niels Bohr Institute, Universitetsparken 5, DK-2100 Copenhagen, Denmark, Department of Electric Power Engineering, Technical University of Denmark, Building 325, DK-2800 Lyngby, Denmark.
    Pepe, I.
    Laboratório de Propriedades Opticas, Instituto de Física, Universidade Federal da Bahia, 40210-340 Salvador, Ba, Brazil.
    Characterization of asymmetric fragmentation patterns in SFM images of porous silicon2000In: Solid State Communications, ISSN 0038-1098, E-ISSN 1879-2766, Vol. 113, no 12, p. 703-708Article in journal (Refereed)
    Abstract [en]

    Due to possible technological applications in opto-electronic devices, the interest in characterizing porous silicon structure patterns has recently increased. From scanning force microscopy (SFM) we have obtained images of different samples of porous silicon and applied pattern characterization operators on these matrices. In this paper, asymmetric spatial fragmentation in amplitude envelopes of porous silicon samples are characterized by means of a parameter that quantifies the amount of spatial asymmetry in the gradient field. The results show that this method is well suited to characterize silicon porosity quantitatively.

  • 5.
    Fritzson, Peter
    et al.
    Linköping University.
    Berggren, Karl-Fredrik
    Linköping University.
    A pseudopotential calculation of the density of states of expanded crystalline mercury1976In: Solid State Communications, ISSN 0038-1098, E-ISSN 1879-2766, Vol. 19, no 4, p. 385-387Article in journal (Refereed)
    Abstract [en]

    The first calculation of the density of states of expanded crystalline Hg is reported for the f.c.c., b.c.c., and s.c. structures in the density range ∼ 4–9 g/cm3. The calculations are based on Animalu's local pseudopotential. It is found that a band gap opens up at 6.5 g/cm3 for f.c.c., 5.5 g/cm3 for b.c.c., and 4 g/cm3 for s.c.

  • 6.
    Graham, A.C.
    et al.
    Cavendish Laboratory, Madingley Road, Cambridge CB3 OHE, United Kingdom.
    Thomas, K.J.
    Cavendish Laboratory, Madingley Road, Cambridge CB3 OHE, United Kingdom.
    Pepper, M.
    Cavendish Laboratory, Madingley Road, Cambridge CB3 OHE, United Kingdom.
    Simmons, M.Y.
    Cavendish Laboratory, Madingley Road, Cambridge CB3 OHE, United Kingdom, School of Physics, University of New South Wales, Sydney, NSW 2052, Australia.
    Ritchie, D.A.
    Cavendish Laboratory, Madingley Road, Cambridge CB3 OHE, United Kingdom.
    Berggren, Karl-Fredrik
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Theoretical Physics .
    Jaksch, Peter
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Theoretical Physics .
    Debnarova, Andrea
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
    Yakimenko, I.I.
    0.7 Analogue structures and exchange interactions in quantum wires2004In: Solid State Communications, ISSN 0038-1098, E-ISSN 1879-2766, Vol. 131, no 9-10 SPEC. ISS., p. 591-597Article in journal (Refereed)
    Abstract [en]

    We present experimental studies of crossings of spin-split one-dimensional subbands in ballistic quantum wires in an in-plane magnetic field B ?. At low electron densities, a spontaneous spin-splitting occurs as subbands cross, which gives rise to additional non-quantised conductance structures called 0.7 analogues. We analyse the data within a spin-density-functional model, which includes exchange interactions in a magnetic field. Focussing on the region of the crossings of spin-split subbands, it is found that the energy levels rearrange as they cross due to exchange interactions. © 2004 Elsevier Ltd. All rights reserved.

  • 7.
    Isaev, E.I.
    et al.
    Theoretical Physics Department, Moscow Stt. Inst. Steel and Alloys, 4, Leninskii Prospect, Moscow 119049, Russian Federation.
    Lichtenstein, A.I.
    Research Institute of Materials, Nijmegen University, 1 Toernooiveld, 6525 ED Nijmegen, Netherlands.
    Vekilov, Yu.Kh.
    Theoretical Physics Department, Moscow Stt. Inst. Steel and Alloys, 4, Leninskii Prospect, Moscow 119049, Russian Federation.
    Smirnova, E.A.
    Theoretical Physics Department, Moscow Stt. Inst. Steel and Alloys, 4, Leninskii Prospect, Moscow 119049, Russian Federation.
    Abrikosov, Igor
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Theoretical Physics .
    Simak, S.I.
    Condensed Matter Theory Group, Uppsala University, SE-751 21 Uppsala, Sweden.
    Ahuja, R.
    Condensed Matter Theory Group, Uppsala University, SE-751 21 Uppsala, Sweden.
    Johansson, B.
    Condensed Matter Theory Group, Uppsala University, SE-751 21 Uppsala, Sweden, Dept. of Mat. Sci. and Engineering, Royal Institute of Technology (KTH), SE-100 44 Stockholm, Sweden.
    Ab initio phonon calculations for L12 Ni3Al and B2 NiAl2004In: Solid State Communications, ISSN 0038-1098, E-ISSN 1879-2766, Vol. 129, no 12, p. 809-814Article in journal (Refereed)
    Abstract [en]

    The phonon spectra and phonon density of states of the Ni3Al and NiAl intermetallic compounds are calculated from first principles using the linear response method in conjunction with ultrasoft pseudopotentials. The calculated phonon dispersion curves are in good agreement with available experimental results from inelastic neutron scattering. © 2003 Elsevier Ltd. All rights reserved.

  • 8.
    Klason, Peter
    et al.
    Department of Physics, Göteborg University, SE-412 96 Göteborg, Sweden.
    Borseth, Thomas Moe
    Physics Department/Centre of Material Science and Nanotechnology, University of Oslo, P. O. Box 1126 Blindern, 0318 Oslo, Norway.
    Zhao, Qing X
    Linköping University, Department of Science and Technology, Physics and Electronics. Linköping University, The Institute of Technology.
    Svensson, Bengt G
    Physics Department/Centre of Material Science and Nanotechnology, University of Oslo, P. O. Box 1126 Blindern, 0318 Oslo, Norway.
    Kuznetsov, Andrej Yu
    Physics Department/Centre of Material Science and Nanotechnology, University of Oslo, P. O. Box 1126 Blindern, 0318 Oslo, Norway.
    Bergman, Peder
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Willander, Magnus
    Linköping University, Department of Science and Technology, Physics and Electronics. Linköping University, The Institute of Technology. Department of Physics, Göteborg University, Göteborg, Sweden.
    Temperature dependence and decay times of zinc and oxygen vacancy related photoluminescence bands in zinc oxide2008In: Solid State Communications, ISSN 0038-1098, E-ISSN 1879-2766, Vol. 145, no 5-6, p. 321-326Article in journal (Refereed)
    Abstract [en]

    A photoluminescence study was performed at different temperatures on bulk ZnO samples annealed in zinc- and oxygen-rich atmospheres. The different annealing conditions create oxygen and zinc vacancies in a controlled way in the ZnO samples. These defects are both involved in the deep band emission (DBE) that is often observed in ZnO but exhibit different optical characteristics promoting defect identification. In particular, when decreasing the PL measurement temperature the energy peak position of the -related band decreases while that of  increases. Secondly, phonon replicas are clearly observed in the DBE spectra in the sample containing . Finally, the characteristics of the DBE decay time for - and -enriched samples are also different. Specifically, for the -enriched sample the decay curves show strong wavelength dependence and generally slower decay components as compared to the sample enriched with .

  • 9. Lozovik, Y. E.
    et al.
    Kurbakov, I.L.
    Astrakharchik, G. E.
    Boronat, J.
    Willander, Magnus
    Linköping University, The Institute of Technology. Linköping University, Department of Science and Technology.
    Strong correlation effects in 2D Bose-Einstein condensed dipolar excitons2007In: Solid State Communications, ISSN 0038-1098, E-ISSN 1879-2766, Vol. 144, no 9, p. 399-404Article in journal (Refereed)
    Abstract [en]

    By doing quantum Monte Carlo ab initio simulations we show that dipolar excitons, which are now under experimental study, actually are strongly correlated systems. Strong correlations manifest in significant deviations of excitation spectra from the Bogoliubov one, large Bose condensate depletion, short-range order in the pair correlation function, and peak(s) in the structure factor. © 2007 Elsevier Ltd. All rights reserved.

  • 10.
    Lozovik, Yu E
    et al.
    Institute of Spectroscopy, Troitsk, Russian Federation.
    Volkov, S Yu
    Institute of Spectroscopy, Troitsk, Russian Federation.
    Willander, Magnus
    Chalmers.
    Crystallization and quantum melting of few electron system in a spherical quantum dot: quantum Monte Carlo simulation2003In: Solid State Communications, ISSN 0038-1098, E-ISSN 1879-2766, Vol. 125, no 2, p. 127-131Article in journal (Refereed)
    Abstract [en]

    Spherical quantum dots with a few charged Fermi particles (electrons or holes) are studied for different total spins. Simulation by quantum path integral Monte Carlo method is performed. The dependence of the electron correlations in the quantum dot is studied at different mean interelectron separation controlled by number of electrons in the quantum dot and by steepness of electron confinement (the latter parameter can be changed by the gate voltage). The cold melting-quantum transition from Wigner crystal-like state (i.e. from regime of strongly correlated electrons) to a Ferad liquid-like state-driven by the steepness of electron confinement is studied. The pair correlation function and radial function characterizing electron quantum delocalization are analyzed.

  • 11. Onipko, A.
    et al.
    Malysheva, L.
    Bogolyubov Inst. for Theor. Physics, 252143, Kiev, Ukraine.
    Triple-, double-, and fractionally-spaced Wannier-Stark ladders2001In: Solid State Communications, ISSN 0038-1098, E-ISSN 1879-2766, Vol. 118, no 2, p. 63-67Article in journal (Refereed)
    Abstract [en]

    The concept of Wannier-Stark (WS) quantization literally refers to infinite crystals or bulk electron states. In real finite crystals, the bulk and edge or surface states always coexist. Moreover, when the surface states are already considerably localized due to the presence of a constant electric field, the WS ladder (WSL) and hence the WS localization may not yet come into play, at least, in the canonical form of WS quantization Ej = const±je, j = 0, 1, 2, ... (Ej is the one-electron energy, and the parameter e is associated with the electric field strength). We show that at certain voltages Vm, m = 3, 4, ..., which are lower than V8 needed for the WS band opening (the sub-WS regime), the mid-spectrum levels can form triple-, double-, and fractional-spaced WSLs, where El = ±l[1+2/(m-2)]em. It is also found that in the WS regime, the quantization of surface localized states (sls) smoothly changes from the Airy type (at the spectrum edges) to the WS type with a pronounced energy interval in between, where the level spacing doubles that of canonical WSL. Possible experimental manifestations of predicted effects are also outlined.

  • 12.
    Radchenko, T. M.
    et al.
    NASU, Ukraine.
    Shylau, A. A.
    Technical University of Denmark, Denmark.
    Zozoulenko, Igor
    Linköping University, Department of Science and Technology, Physics and Electronics. Linköping University, The Institute of Technology.
    Conductivity of epitaxial and CVD graphene with correlated line defects2014In: Solid State Communications, ISSN 0038-1098, E-ISSN 1879-2766, Vol. 195, p. 88-94Article in journal (Refereed)
    Abstract [en]

    Transport properties of single-layer graphene with correlated one-dimensional defects are studied theoretically using the computational model within the time-dependent real-space Kubo-Greenwood formalism. Such defects are present in epitaxial graphene, comprising atomic terraces and steps due to the substrate morphology, and in polycrystalline chemically vapor-deposited (CVD) graphene due to the grain boundaries, composed of a periodic array of dislocations, or quasi-periodic nanoripples originated from the metal substrate. The extended line defects are described by the long-range Lorentzian-type scattering potential. The dc conductivity is calculated numerically for different cases of distribution of line defects. This includes a random (uncorrelated) and a correlated distribution with a prevailing direction in the orientation of lines. The anisotropy of the conductivity along and across the line defects is revealed, which agrees with experimental measurements for epitaxial graphene grown on SiC. We performed a detailed study of the conductivity for different defect correlations, introducing the correlation angle alpha(max)-the maximum possible angle between any two lines. We find that for a given electron density, the relative enhancement of the conductivity for the case of fully correlated line defects in comparison to the case of uncorrelatecl ones is larger for a higher defect density. Finally, we, for the first time, study the conductivity of realistic samples where both extended line defects and point-like scatterers such as adatoms and charged impurities are presented.

  • 13.
    Rosen, Johanna
    et al.
    Rhein Westfal TH Aachen.
    Schneider, JA
    Rhein Westfal TH Aachen.
    Larsson, K
    Uppsala University.
    Ab initio studies of adsorption and migration surface processes on an alpha-Al2O3 surface2005In: Solid State Communications, ISSN 0038-1098, E-ISSN 1879-2766, Vol. 135, no 01-Feb, p. 90-94Article in journal (Refereed)
    Abstract [en]

    Surface processes on alpha-Al2O3 (0001) have been investigated theoretically using density functional theory. Ion-surface interactions prior to collision were investigated by means of ab initio molecular dynamics simulations, showing an adsorbate trajectory towards a preferred adsorption site. Furthermore, the adsorption process at different surface sites was investigated, together with calculations of barriers for migration between these sites. Although the equilibrium (bulk) adsorption site was energetically favourable, the presence and magnitude of the migration barriers indicate that activation energy is necessary to form the equilibrium surface structure. These results are of importance for a fundamental understanding of ion-surface interactions.

  • 14.
    Rosen, Johanna
    et al.
    Rhein Westfal TH Aachen.
    Schneider, JM
    Rhein Westfal TH Aachen.
    Larsson, K
    Uppsala University.
    Ab initio molecular dynamics study of ion-surface interactions2005In: Solid State Communications, ISSN 0038-1098, E-ISSN 1879-2766, Vol. 134, no 5, p. 333-336Article in journal (Refereed)
    Abstract [en]

    Ion-surface collisions have been investigated theoretically using ab initio molecular dynamics within density functional theory. The temporal evolution of the position of the bombarding ion, as well as its nearest neighbors, was studied for initial kinetic energies of 0 and 3.5 eV (0 and 5 km/s, respectively). Also investigated was the ion-surface interaction prior to collision and the following energy transfer, as indicated by changes in ion velocity. At 3.5 eV collision energy, the calculation results suggest the formation of local structural disorder within the simulation time frame studied. These results are of fundamental importance for an increased understanding of the ion-surface interaction during a collision event, with resulting changes in atomic level structure.

  • 15.
    Scabarozi, T.H.
    et al.
    Department of Materials Engineering, Drexel University, Philadelphia, PA 19104, United States, Department of Physics and Astronomy, Rowan University, Glassboro, NJ 08028, United States.
    Eklund, Per
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics.
    Emmerlich, Jens
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics.
    Högberg, Hans
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics.
    Meehan, T.
    Department of Physics and Astronomy, Rowan University, Glassboro, NJ 08028, United States.
    Finkel, P.
    Department of Physics and Astronomy, Rowan University, Glassboro, NJ 08028, United States.
    Barsoum, M.W.
    Department of Materials Engineering, Drexel University, Philadelphia, PA 19104, United States.
    Hettinger, J.D.
    Department of Physics and Astronomy, Rowan University, Glassboro, NJ 08028, United States.
    Hultman, Lars
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics.
    Lofland, S.E.
    Department of Physics and Astronomy, Rowan University, Glassboro, NJ 08028, United States.
    Weak electronic anisotropy in the layered nanolaminate Ti 2 GeC2008In: Solid State Communications, ISSN 0038-1098, E-ISSN 1879-2766, Vol. 146, no 11-12, p. 498-501Article in journal (Refereed)
    Abstract [en]

    We have investigated the anisotropy in electronic transport of the layered ternary Ti2GeC by comparing the results of measurements on c-axis oriented epitaxial thin-film and polycrystalline bulk samples. The electrical conductivities, Hall coefficients, and magnetoresistances were analyzed within a multi-band framework. An adequate description of the magnetotransport data on the film with the highest mobility required the use of the explicit field-dependent conductivity tensor with three conduction bands. The analysis indicated that n ˜ p, although with n ˜ 3.5 × 1027 m- 3. The ratio of the a- to c-axis conductivities is small and contrary to theoretical predictions. © 2008 Elsevier Ltd. All rights reserved.

  • 16.
    Thakur, Shweta
    et al.
    Shoolini University, India.
    Rai, Radheshyam
    Shoolini University, India.
    Tiwari, Ashutosh
    Linköping University, Department of Physics, Chemistry and Biology, Biosensors and Bioelectronics. Linköping University, The Institute of Technology.
    Structural, dielectric and magnetic properties of Gd and Dy doped (Bi0.95RE0.05)(Fe0.95Mn0.05)O-3 ceramics synthesized by SSR method2014In: Solid State Communications, ISSN 0038-1098, E-ISSN 1879-2766, Vol. 197Article in journal (Refereed)
    Abstract [en]

    The multiferruic (Bi0.95RE0.05)(Fe0.95Mn0.05)O-3 (where RE is Gd (BGFM) and Dy (BDFM)) has been synthesized by using the solid state reaction (SSR) technique. Effects of Gd and Dy substitutions on the structure, electrical and ferroelectric properties of (Bi0.95RE0.05)(Fe0.95Mn0.05)O-3 samples have been studied by performing X-ray diffraction, dielectric measurements and magnetic measurements. The crystal structure of the ceramic samples shows a monoclinic phase. Studies of dielectric properties (dielectric constant (epsilon) and tangent loss (tan delta)) both as a function of frequency (10 and 100 kHz) and temperatures (20-300 degrees C) exhibit dielectric anomaly in the range of (225-245 degrees C) suggesting a possible ferroelectric-paraelectric phase transition in the compounds. The vibrating sample magnetometer (VSM) measurement shows a significant change in the magnetic properties of Gd and Dy doped (Bi0.95RE0.05)(Fe0.95Mn0.05)O-3. It is seen that the coercive field (H-C) and remanent magnetization (M-R) increase for Gd.

  • 17.
    Tzalenchuk, Alexander
    et al.
    National Physics Lab, Teddington.
    Lara-Avila, Samuel
    Chalmers.
    Cedergren, Karin
    Chalmers.
    Syväjärvi, Mikael
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Yakimova, Rositsa
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Kazakova, Olga
    National Physics Lab, Teddington.
    Janssen, T J B M
    National Physics Lab, Teddington.
    Moth-Poulsen, Kasper
    University of California Berkeley.
    Bjornholm, Thomas
    University of Copenhagen.
    Kopylov, Sergey
    University of Lancaster.
    Falko, Vladimir
    University of Lancaster.
    Kubatkin, Sergey
    Chalmers.
    Engineering and metrology of epitaxial graphene2011In: Solid State Communications, ISSN 0038-1098, E-ISSN 1879-2766, Vol. 151, no 16, p. 1094-1099Article in journal (Refereed)
    Abstract [en]

    ere we review the concepts and technologies, in particular photochemical gating, which contributed to the recent progress in quantum Hall resistance metrology based on large scale epitaxial graphene on silicon carbide.

  • 18.
    Yablonskikh, M. V.
    et al.
    Russian Academy of Sciences-Ural Division,Yekaterinburg .
    Grebennikov, V. I.
    Russian Academy of Sciences-Ural Division,Yekaterinburg .
    Yarmoshenko, Y. M.
    Russian Academy of Sciences-Ural Division,Yekaterinburg .
    Kurmaev, E. Z.
    Russian Academy of Sciences-Ural Division,Yekaterinburg .
    Butorin, S. M.
    Uppsala University.
    Duda, L.-C.
    Uppsala University.
    Såthe, Conny
    Uppsala University.
    Käämbre, Tanel
    Uppsala University.
    Magnuson, Martin
    Uppsala University.
    Nordgren, J.
    Uppsala University.
    Plogmann, S.
    Universität Osnabrück, Germany.
    Neumann, M.
    Universität Osnabrück, Germany.
    Magnetic circular dichroism in X-ray fluorescence of Heuseler alloys at threshold excitation2001In: Solid State Communications, ISSN 0038-1098, E-ISSN 1879-2766, Solid State Communications, ISSN ISSN 0038-1098, EISSN 1879-2766, Vol. 117, no 2, p. 79-82Article in journal (Refereed)
    Abstract [en]

    The results of fluorescence measurements of magnetic circular dichroism (MCD) in Mn L2,3 X-ray emission and absorption for Heusler alloys NiMnSb and Co2MnSb are presented. Very intense resonance Mn L3 emission is found at the Mn 2p3/2 threshold and attributed to a peculiarity of the threshold excitation in materials with a half-metallic character of the electronic structure. The excitation energy dependence of Mn L2,3 X-ray emission spectra (XES) was measured at beamline ID12B at the European Synchrotron Radiation Facility (ESRF, Grenoble) using 83% circularly polarized X-rays. A very large MCD effect found in XES is attributed to strong exchange splitting of spin-up and spin-down Mn 3d states. The anomalously high ratio of L2 emission intensity to L3 emission intensity is found.

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