Acreo has a long tradition of working with quantum structure based infrared (IR) detectors and arrays. This includes QWIP (quantum well infrared photodetector), QDIP (quantum dot infrared photodetector), and InAs/GaInSb based photon detectors of different structure and composition. It also covers RandD on uncooled microbolometers. The integrated thermistor material of such detectors is advantageously based on quantum structures that are optimised for high temperature coefficient and low noise. Especially the SiGe material system is preferred due to the compatibility with silicon technology. The RandD work on IR detectors is a prominent part of Acreos centre of excellence "IMAGIC" on imaging detectors and systems for non-visible wavelengths. IMAGIC is a collaboration between Acreo, several industry partners and universities like the Royal Institute of Technology (KTH) and Linkoping University.
The doping level of a semiconductor material can be determined using the plasma resonance frequency to obtain the carrier concentration associated with doping. This paper provides an overview of the procedure for the three most common polytypes of SiC. Results for 3C-SiC are presented and discussed. In phosphorus doped samples analysed, it is submitted that the 2nd plasma resonance cannot be detected due to high values of the free carrier damping constant gamma. (C) 2015 Elsevier B.V. All rights reserved.
n/a
AlxGa1-xN epilayers, grown on c-plane oriented sapphire substrates by metal organic chemical vapour deposition (MOCVD), were evaluated using FTIR infrared reflectance spectroscopy. A peak at similar to 850 cm(-1) in the reflectance spectra, not reported before, was observed. Possible origins for this peak are considered and discussed. (C) 2016 Elsevier B.V. All rights reserved.