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  • 1.
    Abadei, S.
    et al.
    Department of Microelectronics, Chalmers University of Technology, 412 96 Göteborg, Sweden.
    Gevorgian, S.
    Department of Microelectronics, Chalmers University of Technology, 412 96 Göteborg, Sweden, Core Unit Research Center, Ericsson Microwave Systems, SE-431 84, Mölnda, Sweden.
    Kugler, Veronika Mozhdeh
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
    Helmersson, Ulf
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Plasma and Coating Physics .
    Andreasson, J.
    Department of Materials and Manufacturing Engineering, Luleå University of Technology, 971 87, Luleå, Sweden.
    Microwave properties of tunable capacitors basee on magnetron sputtered ferroelectric Na0.5K0.5NbO3 film on low and high resistivity silicon substrates2001In: Integrated Ferroelectrics, ISSN 1058-4587, E-ISSN 1607-8489, Vol. 39, no 1-4, p. 359-366Conference paper (Other academic)
    Abstract [en]

    In this work, small signal DC voltage dependent dielectric permittivity, loss tangent, and tuneability of magnetron sputtered epitaxial Na0.5K0.5NO3 films are studied experimentally. (100)-oriented Na0.5K0.5NbO3 films are deposited onto SiO2-buffered CMOS grade low resistivity (p = 10-20 cm) and high resistivity (p = 15-45 kcm) silicon substrates. Planar capacitors with 2 or 4 m gaps between electrodes have been fabricated on top of ferroelectric films. These devices have been characterized in the frequency range 1.0 MHz to 50 GHz at temperatures 30 - 300K. Na0.5K0.5NbO3/SiO2/Si structures on high resistivity silicon substrate exhibit C-V performances typical for Metal-Insulator- Semiconductor (MIS) capacitors. At low frequencies, f 1.0 GHz, the large tuneability and large losses are associated with the MIS structure, while at higher microwave frequencies the tuneability is mainly associated with the ferroelectric, film. At 1.0 MHz and room temperature, the tuneability of Na0.5K0.5NbO3/SiO2/Si structures more than 90%, reducing to 10-15 % at 50 GHz. The losses decrease with increasing the DC bias and frequency. A Q-factor more than 15 at 50 GHz is observed. The dielectric permittivity of the Na0.5K0.5NbO3 film is in the range 50-150 at frequencies 0.045-50 GHz. On low resistivity substrate the performance of Na0.5K0.5NbO3 films is completely screened by the high losses in silicon, and the tuneability is negligible. © 2001 Taylor and Francis.

  • 2.
    Chen, Kai
    et al.
    Nanjing University of Science and Technology, Peoples R China; Nanjing University, Peoples R China.
    Guo, Rui
    Nanjing University of Science and Technology, Peoples R China.
    Ma, Chunguang
    Nanjing University of Science and Technology, Peoples R China.
    Dai, Tingyang
    Nanjing University, Peoples R China.
    Ye, Sunjie
    Nanjing University, Peoples R China.
    Lu, Yun
    Nanjing University, Peoples R China.
    Gao, Feng
    Linköping University, Department of Physics, Chemistry and Biology, Biomolecular and Organic Electronics. Linköping University, The Institute of Technology.
    Zhu, Jinsong
    Nanjing University, Peoples R China.
    Jiang, Wei
    Nanjing University of Science and Technology, Peoples R China.
    Self-Assembled Core-Shell Polymer Dielectric Prepared by Solution Casting Process2009In: Integrated Ferroelectrics, ISSN 1058-4587, E-ISSN 1607-8489, Vol. 113, p. 1-8Article in journal (Refereed)
    Abstract [en]

    Giant permittivity at 1 MHz, which slightly changes with temperatures, is observed in a polymer composite. The dielectric spectroscopy demonstrates that the samples are electrically heterogeneous. The microstructure observation and the ingredient analysis evidence they self assemble the conducting cores surrounded by the insulating shells. The giant-dielectric phenomenon is therefore attributed to the percolation effect. The electrically heterogeneous microstructure with effective permittivity values about 10 000 can be fabricated by a simple solution casting process in air. The composite is an attractive option to the currently used printing dielectric and the future flexible electronics.

  • 3.
    Qiu, X. Y.
    et al.
    Nanjing University, Peoples R China.
    Gao, Feng
    Linköping University, Department of Physics, Chemistry and Biology, Biomolecular and Organic Electronics. Linköping University, The Institute of Technology.
    Liu, H. W.
    Nanjing University, Peoples R China.
    Zhu, J. S.
    Nanjing University, Peoples R China.
    Liu, J. -M.
    Nanjing University, Peoples R China.
    Phase separation enhanced interfacial reactions in complex high-k dielectric films2006In: Integrated Ferroelectrics, ISSN 1058-4587, E-ISSN 1607-8489, Vol. 86, no 1, p. 13-19Article in journal (Refereed)
    Abstract [en]

    Amorphous CaZrOx, ZrAlxSiyOz and HfAlOx complex high-k dielectric films are deposited by pulsed laser deposition, and their microstructural characteristics and interfacial reactions between deposited films and Si substrates during high temperature annealing processes are investigated by X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy. An essential finding is that nano-scale phase separation appears to be a common phenomenon for these amorphous films. The nonstoichiometric ZrOx or HfOx clusters precipitating from the amorphous matrix either react with silicon on the interface to form silicate or silicide interfacial layer, or nucleate and grow into nanosized crystals embedded in the outer layer of the dielectric films, which degrades the electrical performances of films.

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