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  • 1.
    Adnane, Bouchaib
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Yt- och Halvledarfysik. Linköpings universitet, Tekniska högskolan.
    Lai, Yi-Fan
    National Nano Device Labs, Taiwan.
    Shieh, Jia-Min
    National Nano Device Labs, Taiwan.
    Holtz, Per-Olof
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska högskolan.
    Ni, Wei-Xin
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Yt- och Halvledarfysik. Linköpings universitet, Tekniska högskolan.
    Photoluminescence study of nanocrystalline-Si(Ge) embedded in mesoporous silica2009Inngår i: Solid-State Electronics, ISSN 0038-1101, E-ISSN 1879-2405, Vol. 53, nr 8, s. 862-864Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    Photoluminescence (PL) properties of mesoporous silica (MS) samples incorporated with Si or Ge nanocrystals (nc) have been investigated with various excitation powers and post-RTA processes. The analysis of experimental results revealed a superlinear intensity dependence (m = 1.7) in the MS reference sample without nanocrystals, while a sublinear behavior (m = 0.8) is observed for the nc-Si in MS. It thus suggests the same recombination responsible for the luminescence at similar to 2.75 eV for both samples, but different kinetic limitations for the carrier transfer processes. Si nanocrystals play in this case an important role in generating more photo-excited carriers, enhancing the PL intensity.

  • 2.
    Azam, Sher
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Materiefysik. Linköpings universitet, Tekniska högskolan.
    Svensson, Christer
    Linköpings universitet, Institutionen för systemteknik, Elektroniska komponenter. Linköpings universitet, Tekniska högskolan.
    Wahab, Qamar
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Materiefysik. Linköpings universitet, Tekniska högskolan.
    Pulse Input Class-C Power Amplifier Response of SiC MESFET using Physical Transistor Structure in TCAD2008Inngår i: Solid-State Electronics, ISSN 0038-1101, E-ISSN 1879-2405, Vol. 52, nr 5, s. 740-744Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    The switching behavior of a previously fabricated and tested SiC transistor is studied in Class-C amplifier in TCAD simulation. The transistor is simulated for pulse input signals in Class-C power amplifier. The simulated gain (dB), power density (W/mm) and power added efficiency (PAE%) at 500 MHz, 1, 2 and 3 GHz was studied using computational TCAD load pull simulation technique. A Maximum PAE of 77.8% at 500 MHz with 45.4 dB power gain and power density of 2.43 W/mm is achieved. This technique allows the prediction of switching response of the device for switching amplifier Classes (Class-C–F) before undertaking an expensive and time consuming device fabrication. The beauty of this technique is that, we need no matching and other lumped element networks for studying the large signal behavior of RF and microwave transistors.

  • 3.
    Bertilsson, K.
    et al.
    Department of Information Technology, Mid-Sweden University, S-851 70 Sundsvall, Sweden.
    Nilsson, H.-E.
    Department of Information Technology, Mid-Sweden University, S-851 70 Sundsvall, Sweden.
    Hjelm, M.
    Department of Information Technology, Mid-Sweden University, S-851 70 Sundsvall, Sweden, Department of Solid State Electronics, Kungl. Tekniska Högskolan (KTH), Electrum, S-164 40 Kista, Sweden.
    Petersson, C.S.
    Department of Solid State Electronics, Kungl. Tekniska Högskolan (KTH), Electrum, S-164 40 Kista, Sweden.
    Kackell, P.
    Käckell, P., Institut Für Festkörpertheorie und Theoretische Optik, Max-Wien-Platz 1, 07743 Jena, Germany.
    Persson, C.
    The effect of different transport models in simulation of high frequency 4H-SiC and 6H-SiC vertical MESFETs2001Inngår i: Solid-State Electronics, ISSN 0038-1101, E-ISSN 1879-2405, Vol. 45, nr 5, s. 645-653Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    A full band Monte Carlo (MC) study of the high frequency performance of a 4H-SiC short channel vertical MESFET is presented. The MC model used is based on data from a full potential band structure calculation using the local density approximation to the density functional theory. The MC results have been compared with simulations using state of the art drift-diffusion and hydrodynamic transport models. Transport parameters such as mobility, saturation velocity and energy relaxation time are extracted from MC simulations. © 2001 Elsevier Science Ltd.

  • 4.
    Ciechonski, Rafal
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska högskolan.
    Syväjärvi, Mikael
    Linköpings universitet, Institutionen för fysik, kemi och biologi. Linköpings universitet, Tekniska högskolan.
    Wahab, Qamar Ul
    Linköpings universitet, Institutionen för fysik, kemi och biologi. Linköpings universitet, Tekniska högskolan.
    Yakimova, Rositsa
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial.
    Evaluation of MOS structures processed on 4H–SiC layers grown by PVT epitaxy2005Inngår i: Solid-State Electronics, ISSN 0038-1101, E-ISSN 1879-2405, Vol. 49, nr 12, s. 1917-1920Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    MOS capacitors have been fabricated on 4H–SiC epilayers grown by physical vapor transport (PVT) epitaxy. The properties were compared with those on similar structures based on chemical vapor deposition (CVD) layers. Capacitance–voltage (CV) and conductance measurements (GV) were performed in the frequency range of 1 kHz to 1 MHz and also at temperatures up to 475 K. Detailed investigations of the PVT structures indicate a stable behaviour of the interface traps from room temperature up to 475 K. The amount of positive oxide charge QO is 6.83 × 109 cm−2 at room temperature and decreases with temperature increase. This suggests that the processed devices are temperature stable. The density of interface states Dit obtained by Nicollian–Brews conductance method is lower in the structure based on the PVT grown sample.

  • 5.
    Danielsson, E.
    et al.
    KTH, Dept. Microelectron./Info. Technol., P.O. Box Electrum 229, S-164 40 Kista, Sweden.
    Zetterling, C.-M.
    KTH, Dept. Microelectron./Info. Technol., P.O. Box Electrum 229, S-164 40 Kista, Sweden.
    Domeij, M.
    KTH, Dept. Microelectron./Info. Technol., P.O. Box Electrum 229, S-164 40 Kista, Sweden.
    Ostling, M.
    Östling, M., KTH, Dept. Microelectron./Info. Technol., P.O. Box Electrum 229, S-164 40 Kista, Sweden.
    Forsberg, Urban
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Materiefysik.
    Janzén, Erik
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Materiefysik.
    Investigation of thermal properties in fabricated 4H-SiC high power bipolar transistors2003Inngår i: Solid-State Electronics, ISSN 0038-1101, E-ISSN 1879-2405, Vol. 47, nr 4, s. 639-644Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    Silicon carbide bipolar junction transistors have been fabricated and investigated. The transistors had a maximum current gain of approximately 10 times, and a breakdown voltage of 450 V. When operated at high power densities the device showed a clear self-heating effect, decreasing the current gain. The junction temperature was extracted during self-heating to approximately 150 °C, using the assumption that the current gain only depends on temperature. Thermal images of a device under operation were also recorded using an infrared camera, showing a significant temperature increase in the vicinity of the device. The device was also tested in a switched setup, showing fast turn on and turn off at 1 MHz and 300 V supply voltage. Device simulations have been used to analyze the measured data. The thermal conductivity is fitted against the self-heating, and the lifetime in the base is fitted against the measurement of the current gain. © 2003 Elsevier Science Ltd. All rights reserved.

  • 6.
    Jonsson, Rolf
    et al.
    FOI, Linköping.
    Wahab, Qamar Ul
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial.
    Rudner, Staffan
    FOI, Linköping.
    Svensson, Christer
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för systemteknik, Elektroniska komponenter.
    Computational load pull simulations of SiC microwave power transistors2003Inngår i: Solid-State Electronics, ISSN 0038-1101, E-ISSN 1879-2405, Vol. 47, nr 11, s. 1921-1926Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    The design of power transistors for microwave applications requires a good understanding of their large signal behaviour in a real circuit context. The computational load-pull simulation technique is a powerful new way to evaluate the full time-domain voltages and currents of microwave power transistors during realistic operation. With this method it is possible to relate details in the time domain voltages and currents to corresponding variations in carrier densities, electrical field, etc. in the device. We have utilised the standard device simulator Medici, directly driven by sine voltage sources on both input and output. The resulting data from the simulations was then analysed using Matlab. Several 4H-SiC MESFET structures were evaluated by this technique and we found the p-type buffer layer doping and thickness to be crucial to obtain an optimum RF power. A 4H-SiC MESFET structure was found to have an output power of 6.2 W/mm at 1 GHz. ⌐ 2003 Elsevier Ltd. All rights reserved.

  • 7.
    Kashif, Ahsan-Ullah
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska högskolan.
    Johansson, T.
    Infineon Technologies Nordic AB, SE-164 81 Kista, Sweden.
    Svensson, Christer
    Linköpings universitet, Institutionen för systemteknik, Elektroniska komponenter. Linköpings universitet, Tekniska högskolan.
    Azam, Sher
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska högskolan.
    Arnborg, T.
    Ericsson AB, SE-221 83 Lund, Sweden.
    Wahab, Qamar
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska högskolan.
    Influence of interface state charges on RF performance of LDMOS transistor2008Inngår i: Solid-State Electronics, ISSN 0038-1101, E-ISSN 1879-2405, Vol. 52, nr 7, s. 1099-1105Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    Si-LDMOS transistor is studied by TCAD simulation for improved RF performance. In LDMOS structure, a low-doped reduced surface field (RESURF) region is used to obtain high breakdown voltage, but it reduces the transistor RF performance due to high on-resistance. The interface charges between oxide and the RESURF region are studied and found to have a strong impact on the transistor performance both in DC and RF. The presence of excess interface state charges at the RESURF region results not only higher DC drain current but also improved RF performance in terms of power, gain and efficiency. The most important achievement is the enhancement of operating frequency and RF output power is obtained well above 1 W/mm up to 4 GHz.

  • 8.
    Khosa, R. Y.
    et al.
    Univ Iceland, Iceland; Univ Educ Lahore, Pakistan.
    Chen, Jr-Tai
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska fakulteten.
    Pålsson, K.
    Univ Iceland, Iceland.
    Karhu, Robin
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska fakulteten.
    Ul-Hassan, Jawad
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska fakulteten.
    Rorsman, N.
    Chalmers Univ Technol, Sweden.
    Sveinbjörnsson, Einar
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska fakulteten. Univ Iceland, Iceland.
    Electrical properties of 4H-SiC MIS capacitors with AlN gate dielectric grown by MOCVD2019Inngår i: Solid-State Electronics, ISSN 0038-1101, E-ISSN 1879-2405, Vol. 153, s. 52-58Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    We report on the electrical properties of the AlN/4H-SiC interface using capacitance- and conductance-voltage (CV and GV) analysis of AlN/SiC MIS capacitors. The crystalline AlN layers are made by hot wall MOCVD. CV analysis at room temperature reveals an order of magnitude lower density of interface traps at the AlN/SiC interface than at nitrided SiO2/SiC interfaces. Electron trapping in bulk traps within the AlN is significant when the MIS capacitors are biased into accumulation resulting in a large flatband voltage shift towards higher gate voltage. This process is reversible and the electrons are fully released from the AlN layer if depletion bias is applied at elevated temperatures. Current-voltage (IV) analysis reveals that the breakdown electric field intensity across the AlN dielectric is 3-4 MV/cm and is limited by trap assisted leakage. By depositing an additional SiO2 layer on top of the AlN layer, it is possible to increase the breakdown voltage of the MIS capacitors significantly without having much impact on the quality of the AlN/SiC interface.

  • 9.
    Lee, Sang-Kwon
    et al.
    Dept of Semiconductor Science and Technology Chonbuk National University.
    Suh, Eun-Kyung
    Dept of Semiconductor Science and Technology Chonbuk National University.
    Cho, Namn-Kyo
    Nano Mechantronic Research Center Korea Eletronics Technology Inst..
    Park, Hyo-Duck
    Nano Mechantronic Research Center Korea Electronics Technology Inst..
    Unéus, Lars
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Tillämpad Fysik.
    Lloyd-Spets, Anita
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Tillämpad Fysik.
    Comparison study of ohmic contacts to 4H-silicon carbide in oxidizing ambient for harsh environment gas sensor applications2005Inngår i: Solid-State Electronics, ISSN 0038-1101, E-ISSN 1879-2405, Vol. 49, s. 1297-1301Artikkel i tidsskrift (Fagfellevurdert)
  • 10.
    Nawaz, M
    et al.
    Ericsson Microelectronics AB.
    Permthamassin, K
    Ericsson Microelectronics AB.
    Zaring, C
    Ericsson Microelectronics AB.
    Willander, Magnus
    Chalmers.
    A theoretical optimization of GaInP/GaInAs/GaAs based 980 nm Al-free pump laser using self-consistent numerical simulation2003Inngår i: Solid-State Electronics, ISSN 0038-1101, E-ISSN 1879-2405, Vol. 47, nr 2, s. 291-295Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    Using self-consistent two-dimensional numerical simulation (LASTIP), the layer structure of the laser diodes is optimized. A ridge waveguide structure with GaInAs/GaAs and GaInAs/GaInAsP active regions has been simulated. The influence of the well numbers and waveguide thicknesses on the threshold current is studied. Compared to GaInAs/ GaAs, GaInAs/GaInAsP active region suffers from larger spread in the threshold current due to non-uniformities in the carrier density with increasing quantum wells. Simulations have been performed for different temperatures and at different cavity lengths.

  • 11. Persson, C.
    et al.
    Lindefelt, Ulf
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi.
    Sernelius, Bo
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Teoretisk Fysik.
    Plasma-induced band edge shifts in 3C-, 2H-, 4H-, 6H-SiC and Si2000Inngår i: Solid-State Electronics, ISSN 0038-1101, E-ISSN 1879-2405, Vol. 44, nr 3, s. 471-476Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    Plasma-induced energy shifts of the conduction band minimum and of the valence band maximum have been calculated for 3C-, 2H-, 4H-, 6H-, 6H-SiC and Si. The resulting narrowing of the fundamental band gap and of the optical band gap are presented. The method utilized is based on a zero-temperature formalism within the random phase approximation. Electron-electron, hole-hole, electron-hole, electron-optical phonon and hole-optical phonon interactions have been taken into account. The calculations are based on band structure data from a relativistic, full-potential band structure calculation.

  • 12.
    Shtepliuk, I
    et al.
    Kiev, Ukraine.
    Khranovskyy, Volodymyr
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska högskolan.
    Lashkarev, G
    Kiev, Ukraine.
    Khomyak, V.
    Chernivtsi, Ukraine.
    Lazorenko, V
    Kiev, Ukraine.
    Ievtushenko, A
    Kiev, Ukraine.
    Syväjärvi, Mikael
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska högskolan.
    Jokubavicius, Valdas
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
    Yakimova, Rositsa
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska högskolan.
    Electrical properties of n-Zn0.94Cd0.06O/p-SiC heterostructures2013Inngår i: Solid-State Electronics, ISSN 0038-1101, E-ISSN 1879-2405, Vol. 81, s. 72-77Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    We report the low-temperature (250 °C) fabrication of n-ZnCdO/p-SiC heterostructures by direct current magnetron sputtering (DC MS) technique. As-grown heterostructures exhibit diode characteristics: current–voltage measurements showed a typical rectifying characteristic of a p–n junction and the presence of series resistance. It is found that the turn-on voltage of heterostructures depends on the acceptor concentration in p-SiC. Via Cd doping of ZnO the energy barrier for holes can be lowered, which promotes the hole injection from the p-type layer to the n-type layer as well as favors the radiative recombination in the n-ZnCdO layer.

  • 13.
    Tu, Deyu
    et al.
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för systemteknik, Informationskodning.
    Forchheimer, Robert
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för systemteknik, Informationskodning.
    Self-oscillation in electrochemical transistors: An RLC modeling approach2012Inngår i: Solid-State Electronics, ISSN 0038-1101, E-ISSN 1879-2405, Solid-State Electronics: an international journal, ISSN 0038-1101, Vol. 69, s. 7-10Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    We propose an RLC model for PEDOT:PSS electrochemical transistors to interpret the persistent oscillating currents observed in experiments. The electrochemical reaction is represented by an inductor in the equivalent circuit. The simulation results show that an electrochemical device can be operated as normal transistors or oscillators under different voltage bias. This model predicts that analog circuit functions can be realized with "inductor-like" electrochemical devices.

  • 14.
    Ul Hassan Alvi, Naveed
    et al.
    Linköpings universitet, Institutionen för teknik och naturvetenskap. Linköpings universitet, Tekniska högskolan.
    Riaz, Muhammad
    Linköpings universitet, Institutionen för teknik och naturvetenskap. Linköpings universitet, Tekniska högskolan.
    Tzamalis, G
    Linköpings universitet, Institutionen för teknik och naturvetenskap. Linköpings universitet, Tekniska högskolan.
    Nour, Omer
    Linköpings universitet, Institutionen för teknik och naturvetenskap. Linköpings universitet, Tekniska högskolan.
    Willander, Magnus
    Linköpings universitet, Institutionen för teknik och naturvetenskap. Linköpings universitet, Tekniska högskolan.
    Junction temperature in n-ZnO nanorods/(p-4H-SiC, p-GaN, and p-Si) heterojunction light emitting diodes2010Inngår i: Solid-State Electronics, ISSN 0038-1101, E-ISSN 1879-2405, Vol. 54, nr 5, s. 536-540Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    The junction temperature of n-ZnO nanorods/(p-4H-SiC, p-GaN, and p-Si) heterojunction light emitting diodes (LEDs) at built-in potential was modeled and experiments were performed at various temperatures (15-65 degrees C) to validate the model. As the LEDs operate near the built-in potential thats why it is interesting to investigate the temperature coefficient of forward voltage near the built-in potential (similar to V-o). The model and experimental values of the temperature coefficient of forward voltage near the built-in potential (similar to V-o) were compared. We measured the experimental temperature coefficient of the series resistance. By including the temperature coefficient of the series resistance in the model, the theoretical and experimental values become very close to each other. It was found that the series resistance has the main contribution in the junction temperature of our devices. We also measured the junction temperature above the built-in potential and found that the model deviates at higher forward voltage. From this observation we concluded that the model is applicable for low power devices, operated near the built-in potential.

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