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  • 1. Abom, A.E.
    et al.
    Haasch, R.T.
    Frederick Seitz Mat. Res. Laboratory, University of Illinois, Urbana, IL 61801, United States.
    Hellgren, N.
    Frederick Seitz Mat. Res. Laboratory, University of Illinois, Urbana, IL 61801, United States.
    Finnegan, N.
    Frederick Seitz Mat. Res. Laboratory, University of Illinois, Urbana, IL 61801, United States.
    Hultman, Lars
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics.
    Eriksson, Mats
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Applied Physics .
    Characterization of the metal-insulator interface of field-effect chemical sensors2003In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 93, no 12, p. 9760-9768Article in journal (Refereed)
    Abstract [en]

    The metal-insulator interface of hydrogen-sensitive metal-insulator-semiconductor capacitors, with SiO2 as the insulator and Pt as the metal contact, was discussed. It was found that the difference in hydrogen response between differently prepared devices was explained by a difference in concentration of available adsorption sites. The analysis showed that the concentration of Pt atoms in contact with the oxide affected both the hydrogen response and the metal-oxide adhesion.

  • 2.
    Ahuja, R.
    et al.
    Condensed Matter Theory Group, Department of Physics, Uppsala University, SE-751 21 Uppsala, Sweden.
    Arwin, Hans
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Applied Optics .
    Da, Silva A.F.
    Da Silva, A.F., Instituto de Fisica, Universidade Federal da Bahia, Campus Universitario de Ondina, 40 210 340 Salvadoor, Ba, Brazil.
    Persson, C.
    Condensed Matter Theory Group, Department of Physics, Uppsala University, SE-751 21 Uppsala, Sweden.
    Osorio-Guillen, J.M.
    Osorio-Guillén, J.M., Condensed Matter Theory Group, Department of Physics, Uppsala University, SE-751 21 Uppsala, Sweden.
    Souza, De Almeida J.
    Souza De Almeida, J., Condensed Matter Theory Group, Department of Physics, Uppsala University, SE-751 21 Uppsala, Sweden.
    Araujo, C.M.
    Condensed Matter Theory Group, Department of Physics, Uppsala University, SE-751 21 Uppsala, Sweden, Instituto de Fisica, Universidade Federal da Bahia, Campus Universitario de Ondina, 40 210 340 Salvadoor, Ba, Brazil.
    Veje, E.
    Dept. of Electronic Power Eng., Technical University of Denmark, Building 325, DK-2800 Lyngby, Denmark.
    Veissid, N.
    Instituto Nac. de Pesq. Espaciais, LAS, C.P 515, 12 201 970 Sao Jose dos Campos, SP, Brazil.
    An, C.Y.
    Instituto Nac. de Pesq. Espaciais, LAS, C.P 515, 12 201 970 Sao Jose dos Campos, SP, Brazil.
    Pepe, I.
    Instituto de Fisica, Universidade Federal da Bahia, Campus Universitario de Ondina, 40 210 340 Salvadoor, Ba, Brazil, LPCC, College de France, F-75231, Paris, France.
    Johansson, B.
    Condensed Matter Theory Group, Department of Physics, Uppsala University, SE-751 21 Uppsala, Sweden.
    Electronic and optical properties of lead iodide2002In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 92, no 12, p. 7219-7224Article in journal (Refereed)
    Abstract [en]

    Electronic and optical properties of lead iodide were studied experimentally using absorption, transmission, ellipsometry, and theoretically using a full-potential linear muffin-tin-orbital method. The samples were mounted in a closed-cycle helium refrigeration system and studied at temperatures between 10 and 300 K. Band-gap energy of lead iodide was measured as a function of temperature using optical absorption. Calculations showed that there was a small anisotropy in optical properties of lead iodide, and dielectric function calculations agreed well with experiments.

  • 3.
    Ahuja, R.
    et al.
    Condensed Matter Theory Group, Department of Physics, Uppsala University, P.O. Box 530, SE-751 21 Uppsala, Sweden.
    Ferreira, Da Silva A.
    Ferreira Da Silva, A., Instituto de Física, Universidade Federal da Bahia, Campus Universitario de Ondina, 40 210 340 Salvador, Ba, Brazil.
    Persson, C.
    Condensed Matter Theory Group, Department of Physics, Uppsala University, P.O. Box 530, SE-751 21 Uppsala, Sweden.
    Osorio-Guillen, J.M.
    Osorio-Guillén, J.M., Condensed Matter Theory Group, Department of Physics, Uppsala University, P.O. Box 530, SE-751 21 Uppsala, Sweden.
    Pepe, I.
    Instituto de Física, Universidade Federal da Bahia, Campus Universitario de Ondina, 40 210 340 Salvador, Ba, Brazil.
    Järrendahl, Kenneth
    Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
    Lindquist, O.P.A.
    Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
    Edwards, N.V.
    Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
    Wahab, Qamar Ul
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Johansson, B.
    Condensed Matter Theory Group, Department of Physics, Uppsala University, P.O. Box 530, SE-751 21 Uppsala, Sweden.
    Optical properties of 4H-SiC2002In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 91, no 3, p. 2099-2103Article in journal (Refereed)
    Abstract [en]

    The optical band gap energy and the dielectric functions of n-type 4H-SiC have been investigated experimentally by transmission spectroscopy and spectroscopic ellipsometry and theoretically by an ab initio full-potential linear muffin-tin-orbital method. We present the real and imaginary parts of the dielectric functions, resolved into the transverse and longitudinal photon moment a, and we show that the anisotropy is small in 4H-SiC. The measurements and the calculations fall closely together in a wide range of energies. © 2002 American Institute of Physics.

  • 4.
    Aiempanakit, Montri
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Plasma and Coating Physics. Linköping University, The Institute of Technology.
    Aijaz, Asim
    Linköping University, Department of Physics, Chemistry and Biology, Plasma and Coating Physics. Linköping University, The Institute of Technology.
    Lundin, Daniel
    Linköping University, Department of Physics, Chemistry and Biology, Plasma and Coating Physics. Linköping University, The Institute of Technology.
    Helmersson, Ulf
    Linköping University, Department of Physics, Chemistry and Biology, Plasma and Coating Physics. Linköping University, The Institute of Technology.
    Kubart, Tomas
    The Ångström Laboratory, Uppsala University, Uppsala, Sweden.
    Understanding the discharge current behavior in reactive high power impulse magnetron sputtering of oxides2013In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 113, no 13Article in journal (Refereed)
    Abstract [en]

    The discharge current behavior in reactive high power impulse magnetron sputtering (HiPIMS) of Ti-O and Al-O is investigated. It is found that for both metals, the discharge peak current significantly increases in the oxide mode in contrast to the behavior in reactive direct current magnetron sputtering where the discharge current increases for Al but decreases for Ti when oxygen is introduced. In order to investigate the increase in the discharge current in HiPIMS-mode, the ionic contribution of the discharge in the oxide and metal mode is measured using time-resolved mass spectrometry. The energy distributions and time evolution are investigated during the pulse-on time as well as in the post-discharge. In the oxide mode, the discharge is dominated by ionized oxygen, which has been preferentially sputtered from the target surface. The ionized oxygen determines the discharge behavior in reactive HiPIMS.

  • 5.
    Al Hilli, Safaa
    et al.
    Göteborg University.
    Al Morfarji, R.
    Göteborg University.
    Klason, P.
    Göteborg University.
    Willander, Magnus
    Göteborg University.
    Gutman, N.
    The Hebrew University of Jerusalem.
    Saar, A.
    The Hebrew University of Jerusalem.
    Zinc oxide nanorods grown on two-dimensional macroporous periodic structures and plane Si as a pH sensor,2008In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 103, no 1, p. 014302-014309Article in journal (Refereed)
    Abstract [en]

    pH determination is a strong prerequisite for many biochemical and biological processes. We used two methods, namely, the electrochemical potential method (experimental) and site binding method (theoretical), to study the sensitivity of zinc oxide (ZnO) nanorods grown on two-dimensional macroporous periodic structures (2DMPPS) (p-and n-type) and plane n-type Si substrates for use as an intracellular pH sensing device. The dimension of these nanorods varied in radius between 50 and 300 nm and lengths of 1–10 μm. We found that the sensitivity of ZnO nanorods increases with reductions in size, from 35 mV/pH for D = 300 nm and L = 10 μm, to 58 mV/pH for D = 50 nm and L = 1 μm, using the site binding model. The experimental electrochemical potential difference for the ZnO nanorods working electrode versus Ag/AgCl reference electrode showed a high sensitivity range for ZnO nanorods grown on 2DMPPS n-Si substrate as compared to plane n-Si at room temperature for pH ranging from 4 to 12 in buffer and NaCl solutions

  • 6. Al Hilli, S.M.
    et al.
    Willander, Magnus
    Linköping University, The Institute of Technology. Linköping University, Department of Science and Technology.
    Öst, Anita
    Linköping University, Faculty of Health Sciences. Linköping University, Department of Biomedicine and Surgery, Division of cell biology.
    Strålfors, Peter
    Linköping University, Faculty of Health Sciences. Linköping University, Department of Biomedicine and Surgery, Division of cell biology.
    ZnO nanorods as an intracellular sensor for pH measurements2007In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 102, no 8Article in journal (Refereed)
    Abstract [en]

    ZnO nanorods with 80 nm diameter and 700 nm length and grown on the tip of a borosilicate glass capillary (0.7 μm in diameter) were used to create a highly sensitive pH sensor for monitoring in vivo biological process within single cells. The ZnO nanorods, functionalized by proton H3 O+ and hydroxyl O H- groups, exhibit a pH -dependent electrochemical potential difference versus a AgAgCl microelectrode. The potential difference was linear over a large dynamic range (4-11), which could be understood in terms of the change in surface charge during protonation and deprotonation. These nanoelectrode devices have the ability to enable analytical measurements in single living cells and have the capability to sense individual chemical species in specific locations within a cell. © 2007 American Institute of Physics.

  • 7.
    Alling, Björn
    et al.
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Theoretical Physics .
    Marten, Tobias
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Theoretical Physics .
    Abrikosov, Igor
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Theoretical Physics .
    Karimi, A.
    Swiss Federal Institute of Technology Lausanne, Switzerland.
    Comparison of thermodynamic properties of cubic Cr 1-x Al x N and Ti 1-x Al x N from first-principles calculations2007In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 102, no 044314Article in journal (Refereed)
    Abstract [en]

    In order to investigate the stability of the cubic phase of Cr1−xAlxN at high AlN content, first principles calculations of magnetic properties, lattice parameters, electronic structure, and mixing enthalpies of the system were performed. The mixing enthalpy was calculated on a fine concentration mesh to make possible the accurate determination of its second concentration derivative. The results are compared to calculations performed for the related compound Ti1−xAlxN and with experiments. The mixing enthalpy is discussed in the context of isostructural spinodal decomposition. It is shown that the magnetism is the key to understand the difference between the Cr- and Ti-containing systems. Cr1−xAlxN turns out to be more stable against spinodal decomposition than Ti1−xAlxN, especially for AlN-rich samples which are of interest in cutting tools applications.

  • 8.
    Almer, J.
    et al.
    Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois.
    Lienert, U
    Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois.
    Peng, Ru
    Linköping University, Department of Mechanical Engineering, Engineering Materials. Linköping University, The Institute of Technology.
    Schlauer, Christian
    Linköping University, Department of Mechanical Engineering, Engineering Materials. Linköping University, The Institute of Technology.
    Odén, Magnus
    Engineering Materials Luleå University of Technology.
    Strain and texture analysis of coatings using high-energy x-rays2003In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 94, no 1, p. 697-702Article in journal (Refereed)
    Abstract [en]

    We investigate the internal strain and crystallographic orientation (texture) in physical-vapor deposited metal nitride coatings of TiN and CrN. A high-energy diffraction technique is presented that uses synchrotron x rays and an area detector, and which allows the strain and intensity distributions of multiple crystallographic planes to be measured by a single x-ray exposure. Unique texture states and nonlinear sin2 ψ strain distributions are observed for all coatings investigated. Quantitative analysis indicates that existing micromechanical models can reasonably predict strain and corresponding stress for mixed-hkl reflections but are inadequate for fully describing measured data. Alternative mechanisms involving deposition-induced defects are proposed.

  • 9.
    Alnoor, Hatim
    et al.
    Linköping University, Department of Science and Technology. Linköping University, Faculty of Science & Engineering.
    Pozina, Galia
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Khranovskyy, Volodymyr
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
    Liu, Xianjie
    Linköping University, Department of Physics, Chemistry and Biology, Surface Physics and Chemistry. Linköping University, Faculty of Science & Engineering.
    Iandolo, Donata
    Linköping University, Department of Science and Technology, Physics and Electronics. Linköping University, Faculty of Science & Engineering.
    Willander, Magnus
    Linköping University, Department of Science and Technology, Physics and Electronics. Linköping University, Faculty of Science & Engineering.
    Nur, Omer
    Linköping University, Department of Science and Technology, Physics and Electronics. Linköping University, Faculty of Science & Engineering.
    Influence of ZnO seed layer precursor molar ratio on the density of interface defects in low temperature aqueous chemically synthesized ZnO nanorods/GaN light-emitting diodes2016In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 119, no 16, p. 165702-Article in journal (Refereed)
    Abstract [en]

    Low temperature aqueous chemical synthesis (LT-ACS) of zinc oxide (ZnO) nanorods (NRs) has been attracting considerable research interest due to its great potential in the development of light-emitting diodes (LEDs). The influence of the molar ratio of the zinc acetate (ZnAc): KOH as a ZnO seed layer precursor on the density of interface defects and hence the presence of non-radiative recombination centers in LT-ACS of ZnO NRs/GaN LEDs has been systematically investigated. The material quality of the as-prepared seed layer as quantitatively deduced by the X-ray photoelectron spectroscopy is found to be influenced by the molar ratio. It is revealed by spatially resolved cathodoluminescence that the seed layer molar ratio plays a significant role in the formation and the density of defects at the n-ZnO NRs/p-GaN heterostructure interface. Consequently, LED devices processed using ZnO NRs synthesized with molar ratio of 1:5M exhibit stronger yellow emission (similar to 575 nm) compared to those based on 1:1 and 1:3M ratios as measured by the electroluminescence. Furthermore, seed layer molar ratio shows a quantitative dependence of the non-radiative defect densities as deduced from light-output current characteristics analysis. These results have implications on the development of high-efficiency ZnO-based LEDs and may also be helpful in understanding the effects of the ZnO seed layer on defect-related non-radiative recombination. Published by AIP Publishing.

  • 10.
    Alnoor, Hatim
    et al.
    Linköping University, Department of Science and Technology. Linköping University, Faculty of Science & Engineering.
    Savoyant, Adrien
    Aix Marseille University, France.
    Liu, Xianjie
    Linköping University, Department of Physics, Chemistry and Biology, Surface Physics and Chemistry. Linköping University, Faculty of Science & Engineering.
    Pozina, Galia
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Willander, Magnus
    Linköping University, Department of Science and Technology, Physics and Electronics. Linköping University, Faculty of Science & Engineering.
    Nur, Omer
    Linköping University, Department of Science and Technology, Physics and Electronics. Linköping University, Faculty of Science & Engineering.
    An effective low-temperature solution synthesis of Co-doped [0001]-oriented ZnO nanorods2017In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 121, no 21, article id 215102Article in journal (Refereed)
    Abstract [en]

    We demonstrate an efficient possibility to synthesize vertically aligned pure zinc oxide (ZnO) and Co-doped ZnO nanorods (NRs) using the low-temperature aqueous chemical synthesis (90 degrees C). Two different mixing methods of the synthesis solutions were investigated for the Co-doped samples. The synthesized samples were compared to pure ZnO NRs regarding the Co incorporation and crystal quality. Electron paramagnetic resonance (EPR) measurements confirmed the substitution of Co2+ inside the ZnO NRs, giving a highly anisotropic magnetic Co2+ signal. The substitution of Zn2+ by Co2+ was observed to be combined with a drastic reduction in the core-defect (CD) signal (g similar to 1.956) which is seen in pure ZnO NRs. As revealed by the cathodoluminescence (CL), the incorporation of Co causes a slight red-shift of the UV peak position combined with an enhancement in the intensity of the defect-related yellow-orange emission compared to pure ZnO NRs. Furthermore, the EPR and the CL measurements allow a possible model of the defect configuration in the samples. It is proposed that the as-synthesized pure ZnO NRs likely contain Zn interstitial (Zn-i(+)) as CDs and oxygen vacancy (V-O) or oxygen interstitial (O-i) as surface defects. As a result, Co was found to likely occupy the Zn-i(+), leading to the observed CDs reduction and hence enhancing the crystal quality. These results open the possibility of synthesis of highly crystalline quality ZnO NRs-based diluted magnetic semiconductors using the low-temperature aqueous chemical method. Published by AIP Publishing.

  • 11.
    Anasori, Babak
    et al.
    Drexel University, PA 19104 USA; Drexel University, PA 19104 USA.
    Dahlqvist, Martin
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Halim, Joseph
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering. Drexel University, PA 19104 USA.
    Ju Moon, Eun
    Drexel University, PA 19104 USA.
    Lu, Jun
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Hosler, Brian C.
    Drexel University, PA 19104 USA.
    Caspi, Elad N.
    Drexel University, PA 19104 USA; Nucl Research Centre Negev, Israel.
    May, Steven J.
    Drexel University, PA 19104 USA.
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Eklund, Per
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Rosén, Johanna
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Barsoum, Michel W.
    Drexel University, PA 19104 USA.
    Experimental and theoretical characterization of ordered MAX phases Mo2TiAlC2 and Mo2Ti2AlC32015In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 118, no 9, p. 094304-Article in journal (Refereed)
    Abstract [en]

    Herein, we report on the phase stabilities and crystal structures of two newly discovered ordered, quaternary MAX phases-Mo2TiAlC2 and Mo2Ti2AlC3-synthesized by mixing and heating different elemental powder mixtures of mMo:(3-m) Ti:1.1Al:2C with 1.5 less than= m less than= 2.2 and 2Mo: 2Ti:1.1Al:2.7C to 1600 degrees C for 4 h under Ar flow. In general, for m greater than= 2 an ordered 312 phase, (Mo2Ti) AlC2, was the majority phase; for mless than 2, an ordered 413 phase (Mo2Ti2)AlC3, was the major product. The actual chemistries determined from X-ray photoelectron spectroscopy (XPS) are Mo2TiAlC1.7 and Mo2Ti1.9Al0.9C2.5, respectively. High resolution scanning transmission microscopy, XPS and Rietveld analysis of powder X-ray diffraction confirmed the general ordered stacking sequence to be Mo-Ti-Mo-Al-Mo-Ti-Mo for Mo2TiAlC2 and Mo-Ti-Ti-Mo-Al-Mo-Ti-Ti-Mo for Mo2Ti2AlC3, with the carbon atoms occupying the octahedral sites between the transition metal layers. Consistent with the experimental results, the theoretical calculations clearly show that M layer ordering is mostly driven by the high penalty paid in energy by having the Mo atoms surrounded by C in a face-centered configuration, i.e., in the center of the Mn+1Xn blocks. At 331 GPa and 367 GPa, respectively, the Youngs moduli of the ordered Mo2TiAlC2 and Mo2Ti2AlC3 are predicted to be higher than those calculated for their ternary end members. Like most other MAX phases, because of the high density of states at the Fermi level, the resistivity measurement over 300 to 10K for both phases showed metallic behavior. (C) 2015 AIP Publishing LLC.

  • 12.
    Andersson, Jon M.
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Plasma and Coating Physics. Linköping University, The Institute of Technology.
    Wallin, Erik
    Linköping University, Department of Physics, Chemistry and Biology, Plasma and Coating Physics. Linköping University, The Institute of Technology.
    Münger, Peter
    Linköping University, Department of Physics, Chemistry and Biology, Theoretical Physics. Linköping University, The Institute of Technology.
    Helmersson, Ulf
    Linköping University, Department of Physics, Chemistry and Biology, Plasma and Coating Physics. Linköping University, The Institute of Technology.
    Energy distributions of positive and negative ions during magnetron sputtering of an Al target in Ar/O2 mixtures2006In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 100, no 3, p. Art. No. 033305 AUG 1 2006-Article in journal (Refereed)
    Abstract [en]

    The ion flux obtained during reactive magnetron sputtering of an Al target in Ar/O2 gas mixtures was studied by energy-resolved mass spectrometry, as a function of the total and O2 partial pressures. The positive ions of film-forming species exhibited bimodal energy distributions, both for direct current and radio frequency discharges, with the higher energy ions most likely originating from sputtered neutrals. For the negative oxygen ions a high-energy peak was observed, corresponding to ions formed at the target surface and accelerated towards the substrate over the sheath potential. As the total pressure was increased the high-energy peaks diminished due to gas-phase scattering. Based on these results, the role of energetic bombardment for the phase constituent of alumina thin films are discussed.

  • 13.
    Andersson, Mattias
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Biomolecular and Organic Electronics . Linköping University, The Institute of Technology.
    Mueller, Christian
    Esfera UAB.
    Badada, Bekele H
    University of Cincinnati.
    Zhang, Fengling
    Linköping University, Department of Physics, Chemistry and Biology, Biomolecular and Organic Electronics . Linköping University, The Institute of Technology.
    Wuerful, Uli
    Fraunhofer Institute Solar Energy Syst ISE.
    Inganäs, Olle
    Linköping University, Department of Physics, Chemistry and Biology, Biomolecular and Organic Electronics . Linköping University, The Institute of Technology.
    Mobility and fill factor correlation in geminate recombination limited solar cells2011In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 110, no 2, p. 024509-Article in journal (Refereed)
    Abstract [en]

    Empirical data for the fill factor as a function of charge carrier mobility for two different polymer: fullerene systems is presented and analyzed. The results indicate that charge extraction depth limitations and space charge effects are inconsistent with the observed behavior, and the decrease in the fill factor is, instead, attributed to the field-dependent charge separation and geminate recombination. A solar cell photocurrent limited by the Onsager-Braun charge transfer exciton dissociation is shown to be able to accommodate the experimental observations. Charge dissociation limited solar cells always benefit from increased mobilities, and the negative contribution from the reduced charge separation is shown to be much more important for the fill factor in these material systems than any adverse effects from charge carrier extraction depth limitations or space charge effects due to unbalanced mobilities. The logarithmic dependence of the fill factor on the mobility for such a process is also shown to imply that simply increasing the mobilities is an impractical way to reach very high fill factors under these conditions since unrealistically high mobilities are required. A more controlled morphology is, instead, argued to be necessary for high performance.

  • 14.
    Andersson, Viktor
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Plasma and Coating Physics. Linköping University, The Institute of Technology.
    Persson, Nils-Krister
    School of Engineering, Swedish School of Textiles, University College of Borås, SE-501 90 Borås, Sweden.
    Inganäs, Olle
    Linköping University, Department of Physics, Chemistry and Biology, Biomolecular and Organic Electronics. Linköping University, The Institute of Technology.
    Comparative study of organic thin film tandem solar cells in alternative geometries2008In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 104, no 12, p. 124508-Article in journal (Refereed)
    Abstract [en]

    Optical modeling of one folded tandem solar cell and four types of stacked tandem solar cells has been performed using the finite element method and the transfer matrix method for the folded cell and the stacked cells, respectively. The results are analyzed by comparing upper limits for short circuit currents and power conversion efficiencies. In the case of serial connected tandems all of the five cell types may be compared, and we find that the folded cells are comparable to stacked tandem cells in terms of currents and power conversion efficiencies.

  • 15.
    Andersson, Viktor
    et al.
    Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
    Tvingstedt, Kristofer
    Linköping University, Department of Physics, Chemistry and Biology, Biomolecular and Organic Electronics . Linköping University, The Institute of Technology.
    Inganäs, Olle
    Linköping University, Department of Physics, Chemistry and Biology, Biomolecular and Organic Electronics . Linköping University, The Institute of Technology.
    Optical modeling of a folded organic solar cell2008In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 103, no 9, p. 094520-Article in journal (Refereed)
    Abstract [en]

    The optical behavior of a reflective tandem solar cell (V cell) is modeled by means of finite element method (FEM) simulations. The absorption of solar light in the active material as well as in both electrode layers is calculated. The FEM solves the electromagnetic wave equation on the entire defined geometry, resulting in the consideration of interference effects, as well as effects of refraction and reflection. Both single cells and tandem cells are modeled and confirmed to be in accordance with reflectance measurements. Energy dissipation in the active layers is studied as a function of layer thickness and folding angle, and the simulations clearly display the advantage of the light trapping feature of folded cells. This is especially prominent in cells with thinner active layers, where folding induces absorption in the active layer equivalent to that of much thicker cells.

  • 16. Asghar, M.
    et al.
    Hussain, I.
    Noor, N.
    Iqbal, F.
    Wahab, Qamar Ul
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Bhatti, A.
    Properties of dominant electron trap center in n-type SiC epilayers by means of deep level transient spectroscopy2007In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 101, no 7Article in journal (Refereed)
    Abstract [en]

    Characterization of dominant electron trap in as-grown SiC epilayers has been carried out using deep level transient spectroscopy. Two electron traps E1 and Z1 at Ec-0.21 and Ec-0.61 are observed, respectively, Z1 being the dominant level. Line shape fitting, capture cross section, and insensitivity with doping concentration have revealed interesting features of Z1 center. Spatial distribution discloses that the level is generated in the vicinity of epilayers/substrate interface and the rest of the overgrown layers is defect-free. Owing to the Si-rich growth conditions, the depth profile of Z1 relates it to carbon vacancy. The alpha particle irradiation transforms Z1 level into Z 1/Z2 center involving silicon and carbon vacancies. Isochronal annealing study further strengthens the proposed origin of the debated level. © 2007 American Institute of Physics.

  • 17.
    Ashkenov, N.
    et al.
    Universität Leipzig, Fak. F. Phys. and Geowissenschaften, Inst. F. Experimentelle Physik II, Linnéstrasse 5, 04103 Leipzig, Germany.
    Mbenkum, B.N.
    Universität Leipzig, Fak. F. Phys. and Geowissenschaften, Inst. F. Experimentelle Physik II, Linnéstrasse 5, 04103 Leipzig, Germany.
    Bundesmann, C.
    Universität Leipzig, Fak. F. Phys. and Geowissenschaften, Inst. F. Experimentelle Physik II, Linnéstrasse 5, 04103 Leipzig, Germany.
    Riede, V.
    Universität Leipzig, Fak. F. Phys. and Geowissenschaften, Inst. F. Experimentelle Physik II, Linnéstrasse 5, 04103 Leipzig, Germany.
    Lorenz, M.
    Universität Leipzig, Fak. F. Phys. and Geowissenschaften, Inst. F. Experimentelle Physik II, Linnéstrasse 5, 04103 Leipzig, Germany.
    Spemann, D.
    Universität Leipzig, Fak. F. Phys. and Geowissenschaften, Inst. F. Experimentelle Physik II, Linnéstrasse 5, 04103 Leipzig, Germany.
    Kaidashev, E.M.
    Universität Leipzig, Fak. F. Phys. and Geowissenschaften, Inst. F. Experimentelle Physik II, Linnéstrasse 5, 04103 Leipzig, Germany, Rostov State University, Mech./Appl. Math. Research Institute, 200/1 Stachky Avenue, Rostov-on-Don 344090, Russian Federation.
    Kasic, A.
    Universität Leipzig, Fak. F. Phys. and Geowissenschaften, Inst. F. Experimentelle Physik II, Linnéstrasse 5, 04103 Leipzig, Germany.
    Schubert, M.
    Universität Leipzig, Fak. F. Phys. and Geowissenschaften, Inst. F. Experimentelle Physik II, Linnéstrasse 5, 04103 Leipzig, Germany.
    Grundmann, M.
    Universität Leipzig, Fak. F. Phys. and Geowissenschaften, Inst. F. Experimentelle Physik II, Linnéstrasse 5, 04103 Leipzig, Germany.
    Wagner, G.
    Inst. F. Nichtklassische Chem. e.V., Universität Leipzig, Permoserstraße 15, 04318 Leipzig, Germany.
    Neumann, H.
    Inst. F. O. e.V., Permoserstrasse 15, 04303 Leipzig, Germany.
    Darakchieva, Vanya
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Arwin, Hans
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Applied Optics .
    Monemar, Bo
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Infrared dielectric functions and phonon modes of high-quality ZnO films2003In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 93, no 1, p. 126-133Article in journal (Refereed)
    Abstract [en]

    A study was performed on the phonon modes and infrared dielectric functions of high-quality ZnO thin films. The pulsed laser deposition technique was used to deposit the ZnO films on c-plane sapphire substrates and were investigated by high-resolution transmission electron microscopy, high-resolution x-ray diffraction and Rutherford backscattering experiments. The accurate long-wavelength dielectric constant limits of the films were also obtained and were compared with near-band-gap index-of-refraction data upon the Lyddane-Sachs-Teller relation for both film and bulk samples. It was found that the phonon modes of the film were highly consistent with those of the bulk sample.

  • 18.
    Ashraf, H.
    et al.
    Radboud University Nijmegen.
    Imran Arshad, M.
    Islamia University Bahawalpur.
    Muniza Faraz, Sadia
    Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
    Ul Wahab, Qamar
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Hageman, P. R.
    Radboud University Nijmegen.
    Asghar, M.
    Islamia University Bahawalpur.
    Study of electric field enhanced emission rates of an electron trap in n-type GaN grown by hydride vapor phase epitaxy2010In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 108, no 10Article in journal (Refereed)
    Abstract [en]

    Electric field-enhanced emission of electrons from a deep level defect in GaN grown by hydride vapor phase epitaxy has been studied. Using the field dependent mode of conventional deep level transient spectroscopy (DLTS), several frequency scans were performed keeping applied electric field (12.8-31.4 MV/m) and sample temperature (300-360 K) constant. Arrhenius plots of the resultant data yielded an activation energy of the electron trap E ranging from E-c -0.48 +/- 0.02 eV to E-c-0.35 +/- 0.02 eV, respectively. The extrapolation of the as-measured field dependent data (activation energy) revealed the zero-field emission energy (pure thermal activation energy) of the trap to be 0.55 +/- 0.02 eV. Various theoretical models were applied to justify the field-enhanced emission of the carriers from the trap. Eventually it was found that the Poole-Frenkel model associated with a square well potential of radius r=4.8 nm was consistent with the experimental data, and, as a result, the trap is attributed to a charged impurity. Earlier, qualitative measurements like current-voltage (I-V) and capacitance-voltage (C-V) measurements were performed, and screening parameters of the device were extracted to ascertain the reliability of DLTS data.

  • 19.
    Bano, Nargis
    et al.
    Linköping University, Department of Science and Technology. Linköping University, The Institute of Technology.
    Zaman, Siama
    Linköping University, Department of Science and Technology. Linköping University, The Institute of Technology.
    Zainelabdin, A
    Linköping University, Department of Science and Technology. Linköping University, The Institute of Technology.
    Hussain, S
    Linköping University, Department of Science and Technology. Linköping University, The Institute of Technology.
    Hussain, I
    Linköping University, Department of Science and Technology. Linköping University, The Institute of Technology.
    Nour, Omer
    Linköping University, Department of Science and Technology. Linköping University, The Institute of Technology.
    Willander, Magnus
    Linköping University, Department of Science and Technology. Linköping University, The Institute of Technology.
    ZnO-organic hybrid white light emitting diodes grown on flexible plastic using low temperature aqueous chemical method2010In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 108, no 4, p. 043103-Article in journal (Refereed)
    Abstract [en]

    We demonstrate white light luminescence from ZnO-organic hybrid light emitting diodes grown at 90 degrees C on flexible plastic substrate by aqueous chemical growth. The configuration used for the ZnO-organic hybrid white light emitting diodes (WLEDs) consists of a layer of poly (9, 9-dioctylfluorene) (PFO) on poly (3, 4-ethylenedioxythiophene) poly (styrenesulfonate) coated plastic with top ZnO nanorods. Structural, electrical, and optical properties of these WLEDs were measured and analyzed. Room temperature electroluminescence spectrum reveals a broad emission band covering the range from 420 to 750 nm. In order to distinguish the white light components and contribution of the PFO layer we used a Gaussian function to simulate the experimental data. Color coordinates measurement of the WLED reveals that the emitted light has a white impression. The color rendering index and correlated color temperature of the WLED were calculated to be 68 and 5800 K, respectively.

  • 20.
    Bartos, I.
    et al.
    Academic Science Czech Republic, Czech Republic.
    Romanyuk, O.
    Academic Science Czech Republic, Czech Republic.
    Houdkova, J.
    Academic Science Czech Republic, Czech Republic.
    Paskov, Plamen
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering. N Carolina State University, NC 27606 USA.
    Paskova, T.
    N Carolina State University, NC 27606 USA.
    Jiricek, P.
    Academic Science Czech Republic, Czech Republic.
    Correction: Electron band bending of polar, semipolar and non-polar GaN surfaces (vol 119, 105303, 2016)2016In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 119, no 15, p. 159901-Article in journal (Refereed)
    Abstract [en]

    n/a

  • 21.
    Bartos, I.
    et al.
    Academic Science Czech Republic, Czech Republic.
    Romanyuk, O.
    Academic Science Czech Republic, Czech Republic.
    Houdkova, J.
    Academic Science Czech Republic, Czech Republic.
    Paskov, Plamen
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering. N Carolina State University, NC 27695 USA.
    Paskova, T.
    N Carolina State University, NC 27695 USA.
    Jiricek, P.
    Academic Science Czech Republic, Czech Republic.
    Electron band bending of polar, semipolar and non-polar GaN surfaces2016In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 119, no 10, p. 105303-Article in journal (Refereed)
    Abstract [en]

    The magnitudes of the surface band bending have been determined by X-ray photoelectron spectroscopy for polar, semipolar, and non-polar surfaces of wurtzite GaN crystals. All surfaces have been prepared from crystalline GaN samples grown by the hydride-vapour phase epitaxy and separated from sapphire substrates. The Ga 3d core level peak shifts have been used for band bending determination. Small band bending magnitudes and also relatively small difference between the band bendings of the surfaces with opposite polarity have been found. These results point to the presence of electron surface states of different amounts and types on surfaces of different polarity and confirm the important role of the electron surface states in compensation of the bound surface polarity charges in wurtzite GaN crystals. (C) 2016 AIP Publishing LLC.

  • 22. Beckers, M.
    et al.
    Schell, N
    Martins, R. M. S.
    Mucklich, A
    Möller, W.
    Hultman, Lars
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics.
    Nucleation and growth of Ti2 AlN thin films deposited by reactive magnetron sputtering onto MgO(111)2007In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 102, no 7Article in journal (Refereed)
    Abstract [en]

    The nucleation and growth of Ti2 AlN thin films on MgO(111) substrates during dual direct current reactive magnetron cosputtering from Ti and Al targets in an Ar N2 atmosphere at a substrate temperature of 690 °C have been investigated. Time and thickness dependent in situ specular x-ray reflectivity and x-ray diffraction in combination with cross-sectional transmission electron microscopy and Rutherford backscattering spectroscopy reveal the formation of competing phases for slight N superstoichiometry with respect to Ti2 AlN. The stoichiometry deviations initiate the layer-by-layer growth of a ∼380 Å thick epitaxial N-substoichiometric cubic (Ti1-x Alx) Ny layer. N-vacancy driven diffusion of Ti and Al leads to decomposition of this metastable solid solution into nanosized cubic TiN y′ and AlN y″ domains as well as to a solid-state reaction with the MgO(111) by formation of a Mg2 (Al:Ti) O4 spinel, reducing the transformed (Ti1-x Alx) Ny layer thickness down to ∼60 Å. Local AlN y″ domains serve as templates for Ti2 AlN nucleation at higher thicknesses. At the same time TiN y′ and AlN y″ serve as a sink for excess gas phase N during the subsequent polycrystalline Ti2 AlN growth with random (Ti1-x Alx) Ny renucleation as a tissue phase along Ti2 AlN grain boundaries. The individual Ti2 AlN grains with vertical sizes up to the total thickness retain local epitaxy to the substrate, with basal planes nonparallel to the substrate interface. Concurrently the (Ti1-x Alx) Ny layer is further reduced by inward Ti2 AlN grain growth along the basal planes. © 2007 American Institute of Physics.

  • 23.
    Beckers, Manfred
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Höglund, Carina
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Baehtz, Carsten
    Institute of Ion Beam Physics and Materials Research, Forschungszentrum Dresden-Rossendorf.
    Martins, R.M.S.
    Institute of Ion Beam Physics and Materials Research, Forschungszentrum Dresden-Rossendorf.
    Persson, Per O. Å.
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Möller, W.
    Institute of Ion Beam Physics and Materials Research, Forschungszentrum Dresden-Rossendorf.
    The influence of substrate temperature and Al mobility on the microstructural evolution of magnetron sputtered ternary Ti-Al-N thin films2009In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 106, no 6, p. 064915-Article in journal (Refereed)
    Abstract [en]

    Ternary Ti-Al-N films were deposited onto Al2O3 (0001) substrates by reactive co‑sputtering from elemental Ti and Al targets and analyzed by in situ and ex situ x-ray scattering, Rutherford backscattering spectroscopy, transmission electron microscopy and x-ray photoemission spectroscopy. The deposition parameters were set to values that yield Ti:Al:N ratios of 2:1:1 and 4:1:3 at room temperature. 2TiAlN depositions at 675 °C result in epitaxial Ti2AlN growth with basal planes parallel to the substrate surface. Nominal 4TiAl3N depositions at 675 °C and above, however, yield TiN and Ti2AlN domains due to Al loss to the vacuum. Depositions at a lower temperature of 600 °C yield films with correct 4:1:3 stoichiometry, but Ti4AlN3 formation is supposedly prevented by insufficient adatom mobility. Instead, an incoherent Tin+1AlNn structure with random twinned stacking sequences n is obtained, that exhibits both basal plane orientations parallel as well as nearly perpendicular to the substrate interface. X‑ray photoemission spectroscopy shows that in contrast to stoichiometric nitrides the Al is metallically bonded and hence acts as twinning plane within the Tin+1AlNn stackings. Domains with perpendicular basal plane orientation overgrowth those with parallel ones in a competitive growth mode. The resulting morphology is a combination of smooth‑surfaced parallel basal plane orientation domains interrupted by repeated facetted hillock-like features with perpendicular basal plane orientation.

  • 24.
    Berggren, Magnus
    et al.
    Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
    Gustafsson, Göran
    Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
    Inganäs, Olle
    Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
    Andersson, Mats R.
    Chalmers Tekniska Högskola.
    Hjertberg, T.
    Chalmers Tekniska Högskola.
    Wennerström, O.
    Chalmers Tekniska Högskola.
    White light from an electroluminescent diode made from poly[3(4‐octylphenyl)‐2,2′‐bithiophene] and an oxadiazole derivative1994In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 76, no 11, p. 7530-7534Article in journal (Refereed)
    Abstract [en]

    We report on an electroluminescent diode emitting red, green, and blue light simultaneously. The device is based on a thin polymer layer, poly[3‐(4‐octylphenyl)‐2,2′‐bithiophene] and a thick molecular layer, 2‐(4‐biphenylyl)‐5‐(4‐tertbutyl‐phenyl)1,3,5‐oxadiazole. The quantum efficiency for light conversion is 0.3% and the turn‐on voltage for light emission is 7 V. In this article we present electric and spectroscopic characterizations. A mechanism for the light emission, based on electron and hole recombination between the two organic layers, is proposed

  • 25.
    Beyer, Franziska
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Hemmingsson, Carl
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Leone, Stefano
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Lin, Y.-C.
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Gällström, Henrik
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Henry, Anne
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Janzén, Erik
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Deep levels in iron doped n- and p-type 4H-SiC2011In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 110, p. 123701-1-123701-5Article in journal (Refereed)
    Abstract [en]

    Deep levels were detected in Fe-doped n- and p-type 4H-SiC using deep level transient spectroscopy (DLTS). One defect level (EC 0.39 eV) was detected in n-type material. DLTS spectra of p-type 4H-SiC show two dominant peaks (EV + 0.98 eV and EV + 1.46 eV). Secondary ion mass spectrometry measurements confirm the presence of Fe in both n- and p-type 4H-SiC epitaxial layers. The majority capture process for all the three Fe-related peaks is multi-phonon assisted. Similar defect behavior in Si indicates that the observed DLTS peaks are likely related to Fe and Fe-B pairs.

  • 26.
    Beyer, Franziska
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Hemmingsson, Carl
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Pedersen, Henrik
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Henry, Anne
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Janzén, Erik
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Isoya, J.
    University of Tsukuba.
    Morishita, N.
    Japan Atom Energy Agency.
    Ohshima, T.
    Japan Atom Energy Agency.
    Annealing behavior of the EB-centers and M-center in low-energy electron irradiated n-type 4H-SiC2011In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 109, no 10, p. 103703-Article in journal (Refereed)
    Abstract [en]

    After low-energy electron irradiation of epitaxial n-type 4H-SiC with a dose of 5 x 10(16) cm(-2), the bistable M-center, previously reported in high-energy proton implanted 4H-SiC, is detected in the deep level transient spectroscopy (DLTS) spectrum. The annealing behavior of the M-center is confirmed, and an enhanced recombination process is suggested. The annihilation process is coincidental with the evolvement of the bistable EB-centers in the low temperature range of the DLTS spectrum. The annealing energy of the M-center is similar to the generation energy of the EB-centers, thus partial transformation of the M-center to the EB-centers is suggested. The EB-centers completely disappeared after annealing temperatures higher than 700 degrees C without the formation of new defects in the observed DLTS scanning range. The threshold energy for moving Si atom in SiC is higher than the applied irradiation energy, and the annihilation temperatures are relatively low, therefore the M-center, EH1 and EH3, as well as the EB-centers are attributed to defects related to the C atom in SiC, most probably to carbon interstitials and their complexes.

  • 27.
    Booker, Ian Don
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
    Janzén, Erik
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
    Son, Nguyen Tien
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
    Hassan, Jawad
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
    Stenberg, Pontus
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
    Sveinbjörnsson, Einar
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering. Science Institute, University of Iceland, Reykjavik, Iceland.
    Donor and double donor transitions of the carbon vacancy related EH6/7 deep level in 4H-SiC2016In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 119, no 23, article id 235703Article in journal (Refereed)
    Abstract [en]

    Using medium- and high-resolution multi-spectra fitting of deep level transient spectroscopy (DLTS), minority carrier transient spectroscopy (MCTS), optical O-DLTS and optical-electrical (OE)-MCTS measurements, we show that the EH6∕7 deep level in 4H-SiC is composed of two strongly overlapping, two electron emission processes with thermal activation energies of 1.49 eV and 1.58 eV for EH6 and 1.48 eV and 1.66 eV for EH7. The electron emission peaks of EH7 completely overlap while the emission peaks of EH6 occur offset at slightly different temperatures in the spectra. OE-MCTS measurements of the hole capture cross section σp 0(T) in p-type samples reveal a trap-Auger process, whereby hole capture into the defect occupied by two electrons leads to a recombination event and the ejection of the second electron into the conduction band. Values of the hole and electron capture cross sections σn(T) and σp(T) differ strongly due to the donor like nature of the deep levels and while all σn(T) have a negative temperature dependence, the σp(T) appear to be temperature independent. Average values at the DLTS measurement temperature (∼600 K) are σn 2+(T) ≈ 1 × 10−14 cm2, σn +(T) ≈ 1 × 10−14 cm2, and σp 0(T) ≈ 9 × 10−18 cm2 for EH6 and σn 2+(T) ≈ 2 × 10−14 cm2, σn +(T) ≈ 2 × 10−14 cm2, σp 0(T) ≈ 1 × 10−20 cm2 for EH7. Since EH7 has already been identified as a donor transition of the carbon vacancy, we propose that the EH6∕7 center in total represents the overlapping first and second donor transitions of the carbon vacancy defects on both inequivalent lattice sites.

  • 28.
    Bouhafs, Chamseddine
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Darakchieva, Vanya
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Persson, Ingemar
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Tiberj, A.
    University of Montpellier 2, France.
    Persson, Per O A
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Paillet, M.
    University of Montpellier 2, France.
    Zahab, A. -A.
    University of Montpellier 2, France.
    Landois, P.
    University of Montpellier 2, France.
    Juillaguet, S.
    University of Montpellier 2, France.
    Schoeche, S.
    University of Nebraska, NE 68588 USA; University of Nebraska, NE 68588 USA.
    Schubert, M.
    University of Nebraska, NE 68588 USA; University of Nebraska, NE 68588 USA.
    Yakimova, Rositsa
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Structural properties and dielectric function of graphene grown by high-temperature sublimation on 4H-SiC(000-1)2015In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 117, no 8, p. 085701-Article in journal (Refereed)
    Abstract [en]

    Understanding and controlling growth of graphene on the carbon face (C-face) of SiC presents a significant challenge. In this work, we study the structural, vibrational, and dielectric function properties of graphene grown on the C-face of 4H-SiC by high-temperature sublimation in an argon atmosphere. The effect of growth temperature on the graphene number of layers and crystallite size is investigated and discussed in relation to graphene coverage and thickness homogeneity. An amorphous carbon layer at the interface between SiC and the graphene is identified, and its evolution with growth temperature is established. Atomic force microscopy, micro-Raman scattering spectroscopy, spectroscopic ellipsometry, and high-resolution cross-sectional transmission electron microscopy are combined to determine and correlate thickness, stacking order, dielectric function, and interface properties of graphene. The role of surface defects and growth temperature on the graphene growth mechanism and stacking is discussed, and a conclusion about the critical factors to achieve decoupled graphene layers is drawn. (C) 2015 AIP Publishing LLC.

  • 29.
    Brill, J. W.
    et al.
    University of Kentucky, KY 40506 USA.
    Shahi, Maryam
    University of Kentucky, KY 40506 USA.
    Payne, Marcia M.
    University of Kentucky, KY 40506 USA.
    Edberg, Jesper
    Linköping University, Department of Science and Technology, Physics and Electronics. Linköping University, Faculty of Science & Engineering.
    Yao, Y.
    University of Kentucky, KY 40506 USA.
    Crispin, Xavier
    Linköping University, Department of Science and Technology, Physics and Electronics. Linköping University, Faculty of Science & Engineering.
    Anthony, J. E.
    University of Kentucky, KY 40506 USA.
    Frequency-dependent photothermal measurement of transverse thermal diffusivity of organic semiconductors2015In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 118, no 23, p. 235501-Article in journal (Refereed)
    Abstract [en]

    We have used a photothermal technique, in which chopped light heats the front surface of a small (similar to 1 mm(2)) sample and the chopping frequency dependence of thermal radiation from the back surface is measured with a liquid-nitrogen-cooled infrared detector. In our system, the sample is placed directly in front of the detector within its dewar. Because the detector is also sensitive to some of the incident light, which leaks around or through the sample, measurements are made for the detector signal that is in quadrature with the chopped light. Results are presented for layered crystals of semiconducting 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-pn) and for papers of cellulose nanofibrils coated with semiconducting poly(3,4-ethylene-dioxythiophene): poly (styrene-sulfonate) (NFC-PEDOT). For NFC-PEDOT, we have found that the transverse diffusivity, smaller than the in-plane value, varies inversely with thickness, suggesting that texturing of the papers varies with thickness. For TIPS-pn, we have found that the interlayer diffusivity is an order of magnitude larger than the in-plane value, consistent with previous estimates, suggesting that low-frequency optical phonons, presumably associated with librations in the TIPS side groups, carry most of the heat. (C) 2015 AIP Publishing LLC.

  • 30. Broitman, E.
    et al.
    Hellgren, N.
    Järrendahl, Kenneth
    Linköping University, The Institute of Technology.
    Johansson, M.P.
    Olafsson, S.
    Radnoczi, G.
    Radnóczi, G., Res. Inst. Tech. Phys. and Mat. Sci., P.O. Box 49, H-1525 Budapest, Hungary.
    Sundgren, J.-E.
    Hultman, Lars
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics.
    Electrical and optical properties of CNx(0=x=0.25) films deposited by reactive magnetron sputtering2001In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 89, no 2, p. 1184-1190Article in journal (Refereed)
    Abstract [en]

    The electrical and optical properties of carbon-nitride CNx films (O=x=0.25) deposited by unbalanced reactive magnetron sputtering from a graphite target in mixed Ar/N2 discharges at a substrate temperature of 350°C have been investigated. Pure C films exhibit a dark conductivity at room temperature of 250 O-1 cm-1, which grows up to 250 O-1 cm-1 for CNx films with N content of 20%. For CNx films, temperature-dependent conductivity measurements suggest that two electron conduction processes exist in the investigated temperature range 130

  • 31.
    Burnett, Tim L
    et al.
    National Phys Lab, England .
    Yakimova, Rositsa
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Kazakova, Olga
    National Phys Lab, England .
    Identification of epitaxial graphene domains and adsorbed species in ambient conditions using quantified topography measurements2012In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 112, no 5, p. 054308-Article in journal (Refereed)
    Abstract [en]

    We discuss general limitations of topographical studies of epitaxial graphene in ambient conditions, in particular, when an accurate determination of the layers thickness is required. We demonstrate that the histogram method is the most accurate for measurements of small vertical distances (andlt;0.5 nm) and generally should be applied to epitaxial graphene and similar types of samples in order to get the correct and reproducible values. Experimental determination of the step height between different domains of epitaxial graphene shows excellent agreement with the predicted values once the adsorption of a 2D monolayer is taken into account on top of the one layer graphene. In contrast to general limitations of AFM topography, electrostatic force microscopy imaging allows a straightforward identification of domains of epitaxial graphene of different thickness.

  • 32.
    Buyanova, Irina
    et al.
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials.
    Rudko, G. Yu.
    Chen, Weimin
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials.
    Toropov, A. A.
    Sorokin, S. V.
    Ivanov, S. V.
    Kopev, P. S.
    Resonant suppression of exciton spin relaxation in Zn0.96Mn0.04Se/CdSe superlattices2003In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 93, no 10, p. 7352-Article in journal (Refereed)
    Abstract [en]

     Spin relaxation processes in strained Zn0.96Mn0.04Se/CdSe superlattices are studied in detail by using hot photoluminescence combined with tunable excitation spectroscopy. A drastic enhancement in occupation of the upper-lying |+1/2,-3/2> state of the heavy-hole excitons is observed when excitation photon energy is resonantly tuned near an integer number of the LO phonon energy above the |+1/2,-3/2> state. Assuming the Boltzmann distribution between the excitonic states, the spin temperature of the excitons is deduced to be as high as 85 K, well above the lattice temperature of 2 K. The observed behavior provides experimental evidence for a surprisingly strong suppression of spin relaxation from the upper spin-split excitonic branch for small values of wave vector.

  • 33.
    Calamba, Katherine
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Nanostructured Materials. Linköping University, Faculty of Science & Engineering. University of Lorraine, France.
    Schramm, Isabella
    Linköping University, Department of Physics, Chemistry and Biology, Nanostructured Materials. Linköping University, Faculty of Science & Engineering. Saarland University, Germany.
    Johansson Jöesaar, Mats P.
    Linköping University, Department of Physics, Chemistry and Biology, Nanostructured Materials. Linköping University, Faculty of Science & Engineering. SECO Tools AB, Sweden.
    Ghanbaja, J.
    University of Lorraine, France.
    Pierson, J. F.
    University of Lorraine, France.
    Mucklich, F.
    Saarland University, Germany.
    Odén, Magnus
    Linköping University, Department of Physics, Chemistry and Biology, Nanostructured Materials. Linköping University, Faculty of Science & Engineering.
    Enhanced thermal stability and mechanical properties of nitrogen deficient titanium aluminum nitride (Ti0.54Al0.46Ny) thin films by tuning the applied negative bias voltage2017In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 122, no 6, article id 065301Article in journal (Refereed)
    Abstract [en]

    Aspects on the phase stability and mechanical properties of nitrogen deficient (Ti0.54Al0.46)N-y alloys were investigated. Solid solution alloys of (Ti,Al)N were grown by cathodic arc deposition. The kinetic energy of the impinging ions was altered by varying the substrate bias voltage from -30V to -80 V. Films deposited with a high bias value of -80V showed larger lattice parameter, finer columnar structure, and higher compressive residual stress resulting in higher hardness than films biased at -30V when comparing their as-deposited states. At elevated temperatures, the presence of nitrogen vacancies and point defects (anti-sites and self-interstitials generated by the ion-bombardment during coating deposition) in (Ti0.54Al0.46)N-0.87 influence the driving force for phase separation. Highly biased nitrogen deficient films have point defects with higher stability during annealing, which cause a delay of the release of the stored lattice strain energy and then accelerates the decomposition tendencies to thermodynamically stable c-TiN and w-AlN. Low biased nitrogen deficient films have retarded phase transformation to w-AlN, which results in the prolongment of age hardening effect up to 1100 degrees C, i.e., the highest reported temperature for Ti-Al-N material system. Our study points out the role of vacancies and point defects in engineering thin films with enhanced thermal stability and mechanical properties for high temperature hard coating applications. Published by AIP Publishing.

  • 34.
    Calander, N
    et al.
    Chalmers.
    Willander, Magnus
    Chalmers.
    Theory of surface-plasmon resonance optical-field enhancement at prolate spheroids2002In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 92, no 9, p. 4878-4884Article in journal (Refereed)
    Abstract [en]

    The optical-field enhancement from plasmon resonance at spheroids is studied by solving Maxwell equations using spheroidal vector wave functions. This treatment is an extension of the Mie theory for spheres. The phase retardation or dephasing effects, as studied by finite-element methods in a previous article, are confirmed. Nevertheless, the optical-field enhancement is shown to be substantial under certain resonance conditions. It is suggested that the positions of the resonances in parameter space are determined by global antenna properties and the magnitude of the field enhancement by local plasmon resonance.

  • 35.
    Castro Meira, M. V.
    et al.
    University of Federal Reconcavo Bahia, Brazil University of Federal Bahia, Brazil .
    Ferreira da Silva, A.
    University of Federal Bahia, Brazil .
    Baldissera, G.
    Royal Institute Technology, Sweden .
    Persson, C.
    Royal Institute Technology, Sweden University of Oslo, Norway .
    Freitas, J. A.
    USN, USA .
    Gutman, N.
    Hebrew University of Jerusalem, Israel Hebrew University of Jerusalem, Israel .
    Saar, A.
    Hebrew University of Jerusalem, Israel Hebrew University of Jerusalem, Israel .
    Nur, Omer
    Linköping University, Department of Science and Technology, Physics and Electronics. Linköping University, The Institute of Technology.
    Willander, Magnus
    Linköping University, Department of Science and Technology, Physics and Electronics. Linköping University, The Institute of Technology.
    Optical characterization of ZnO nanopillars on Si and macroporous periodic Si structure2012In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 111, no 12, p. 123527-Article in journal (Refereed)
    Abstract [en]

    ZnO nanopillars were successfully grown using both the vapor-liquid-solid and the aqueous chemical growth methods on different substrates, such as quartz, n-, and p-type non-porous Si wafer (flat) and microporous periodic Si structure (MPSiS). Scanning electron microscopy was employed to compare sample morphologies. The absorption was calculated employing the GW(0) method, based on the local density approximation, and with the projector augmented wave approach. Experiment and theory show a reasonable agreement when the shape of the optical absorption is considered. The measured absorption of ZnO nanopillars, on different substrates, is lower than that observed for ZnO films on quartz substrate, in the energy gap spectral range. A strong effect of MPSiS substrates on ZnO nanopillar properties is observed. The photoluminescence technique was also employed as an optical characterization.

  • 36.
    Chason, E.
    et al.
    Brown University, USA.
    Karlson, M.
    Brown University, USA.
    Colin, J. J.
    University of Poitiers, France.
    Magnfält, Daniel
    Linköping University, Department of Physics, Chemistry and Biology. Linköping University, Faculty of Science & Engineering.
    Sarakinos, Kostas
    Linköping University, Department of Physics, Chemistry and Biology, Nanoscale engineering. Linköping University, Faculty of Science & Engineering.
    Abadias, G.
    University of Poitiers, France.
    A kinetic model for stress generation in thin films grown from energetic vapor fluxes2016In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 119, no 14, article id 145307Article in journal (Refereed)
    Abstract [en]

    We have developed a kinetic model for residual stress generation in thin films grown from energetic vapor fluxes, encountered, e.g., during sputter deposition. The new analytical model considers sub-surface point defects created by atomic peening, along with processes treated in already existing stress models for non-energetic deposition, i.e., thermally activated diffusion processes at the surface and the grain boundary. According to the new model, ballistically induced subsurface defects can get incorporated as excess atoms at the grain boundary, remain trapped in the bulk, or annihilate at the free surface, resulting in a complex dependence of the steady-state stress on the grain size, the growth rate, as well as the energetics of the incoming particle flux. We compare calculations from the model with in situ stress measurements performed on a series of Mo films sputter-deposited at different conditions and having different grain sizes. The model is able to reproduce the observed increase of compressive stress with increasing growth rate, behavior that is the opposite of what is typically seen under non-energetic growth conditions. On a grander scale, this study is a step towards obtaining a comprehensive understanding of stress generation and evolution in vapor deposited polycrystalline thin films. Published by AIP Publishing.

  • 37.
    Chen, Jr-Tai
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Hsu, Chih-Wei
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Forsberg, Urban
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Janzén, Erik
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Metalorganic chemical vapor deposition growth of high-mobility AlGaN/AlN/GaN heterostructures on GaN templates and native GaN substrates2015In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 117, no 8, article id 085301Article in journal (Refereed)
    Abstract [en]

    Severe surface decomposition of semi-insulating (SI) GaN templates occurred in high-temperature H2 atmosphere prior to epitaxial growth in a metalorganic chemical vapor deposition system. A two-step heating process with a surface stabilization technique was developed to preserve the GaN template surface. Utilizing the optimized heating process, a high two-dimensional electron gas mobility ∼2000 cm2/V·s was obtained in a thin AlGaN/AlN/GaN heterostructure with an only 100-nm-thick GaN spacer layer homoepitaxially grown on the GaN template. This technique was also demonstrated viable for native GaN substrates to stabilize the surface facilitating two-dimensional growth of GaN layers. Very high residual silicon and oxygen concentrations were found up to ∼1 × 1020 cm−3 at the interface between the GaN epilayer and the native GaN substrate. Capacitance-voltage measurements confirmed that the residual carbon doping controlled by growth conditions of the GaN epilayer can be used to successfully compensate the donor-like impurities. State-of-the-art structural properties of a high-mobility AlGaN/AlN/GaN heterostructure was then realized on a 1 × 1 cm2 SI native GaN substrate; the full width at half maximum of the X-ray rocking curves of the GaN (002) and (102) peaks are only 21 and 14 arc sec, respectively. The surface morphology of the heterostructure shows uniform parallel bilayer steps, and no morphological defects were noticeable over the entire epi-wafer.

  • 38.
    Chen, K.
    et al.
    Nanjing University, Peoples R China.
    Li, G. L.
    Nanjing University, Peoples R China.
    Gao, Feng
    Linköping University, Department of Physics, Chemistry and Biology, Biomolecular and Organic Electronics. Linköping University, The Institute of Technology.
    Liu, J.
    Nanjing University, Peoples R China.
    Liu, J. M.
    Nanjing University, Peoples R China.
    Zhu, J. S.
    Nanjing University, Peoples R China.
    Conducting grain boundaries in the high-dielectric-constant ceramic CaCu3Ti4O122007In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 101, no 7, p. 074101-Article in journal (Refereed)
    Abstract [en]

    To clarify the electrical property of grain boundaries, the fine-grained ceramics CaCu3Ti4O12 have been treated with the hydrofluoric acid to remove the parts of grain boundaries. The dielectric response difference between the etched samples and the pristine ones indicates that the ceramic CaCu3Ti4O12 consists of insulating or semiconducting grains with conducting grain boundaries. Therefore, the giant dielectric phenomenon is supposed not to derive from the grain boundary barrier layer capacitance effect. The possible mechanism is discussed. (c) 2007 American Institute of Physics.

  • 39.
    Chen, K.
    et al.
    Nanjing University, Peoples R China.
    Yuan, S. K.
    Nanjing University, Peoples R China.
    Li, P. L.
    Nanjing University, Peoples R China.
    Gao, Feng
    Linköping University, Department of Physics, Chemistry and Biology, Biomolecular and Organic Electronics. Linköping University, The Institute of Technology.
    Liu, J.
    Nanjing University, Peoples R China.
    Li, G. L.
    Nanjing University, Peoples R China.
    Zhao, A. G.
    Nanjing University, Peoples R China.
    Lu, X. M.
    Nanjing University, Peoples R China.
    Liu, J. M.
    Nanjing University, Peoples R China.
    Zhu, J. S.
    Nanjing University, Peoples R China.
    High permittivity in zr doped NiO ceramics2007In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 102, no 3, p. 034103-Article in journal (Refereed)
    Abstract [en]

    We report on measurements of the dielectric permittivity of NiO-based ceramics doped with Zr (ZNO). Samples were prepared by the traditional solid-state reaction method. The concentration of Zr has an effect on the dielectric properties of ZNO ceramics. High permittivity values (similar to 10(4)) were observed which remain almost constant from 200 K to 350 K at low frequencies. The high-dielectric-constant response of the ZNO ceramics is attributed mainly to a grain boundary (internal) barrier layer capacitance. (c) 2007 American Institute of Physics.

  • 40.
    Dagnelund, Daniel
    et al.
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials.
    Buyanova, Irina
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials.
    Wang, Xingjun
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials.
    Chen, Weimin
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials.
    Utsumi, A.
    Furukawa, Y.
    Wakahara, A.
    Yonezu, H.
    Formation of grown-in defects in molecular beam epitaxial Ga(In)NP: effects of growth conditions and post-growth treatments2008In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 103, p. 063519-Article in journal (Refereed)
    Abstract [en]

    Effects of growth conditions and post-growth treatments, such as presence of N ions, N2 flow, growth temperature, In alloying, and postgrowth rapid thermal annealing (RTA), on formation of grown-in defects in Ga(In)NP prepared by molecular beam epitaxy are studied in detail by the optically detected magnetic resonance (ODMR) technique. Several common residual defects, such as two Ga-interstitial defects (i.e., Gai-A and Gai-B) and two unidentified defects with a g factor around 2 (denoted by S1 and S2), are closely monitored. Bombardment of impinging N ions on grown sample surface is found to facilitate formation of these defects. Higher N2 flow is shown to have an even more profound effect than a higher number of ions in introducing these defects. Incorporation of a small amount of In (e.g., 5.1%) in GaNP seems to play a minor role in the formation of the defects. In GaInNP with 45% of In; however, the defects were found to be abundant. Effect of RTA on the defects is found to depend on initial configurations of Gai-related defects formed during the growth. In the alloys where the Gai-A and Gai-B defects are absent in the as-grown samples (i.e., GaNP grown at a low temperature of 460 °C), the concentrations of the two Gai defects are found to increase after postgrowth RTA. This indicates that the defects originally introduced in the as-grown alloys have been transformed into the more thermally stable Gai-A and Gai-B during RTA. On the other hand, when the Gai-A and Gai-B are readily abundant (e.g., at higher growth temperatures (>=500 °C), RTA leads to a slight reduction of the Gai-A and Gai-B ODMR signals. The S2 defect is also shown to be thermally stable upon the RTA treatment.

  • 41.
    Dagnelund, Daniel
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials. Linköping University, The Institute of Technology.
    Huang, Yuqing
    Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials. Linköping University, The Institute of Technology.
    Tu, C. W.
    Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California, USA .
    Yonezu, H.
    Department of Electrical and Electronic Engineering, Toyohashi University of Technology, Japan .
    Buyanova, Irina
    Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials. Linköping University, The Institute of Technology.
    Chen, Weimin
    Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials. Linköping University, The Institute of Technology.
    Dual-wavelength excited photoluminescence spectroscopy of deep-level hole traps in Ga(In)NP2015In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 117, p. 015701-Article in journal (Refereed)
    Abstract [en]

    By employing photoluminescence(PL) spectroscopy under dual-wavelength optical excitation, we uncover the presence of deep-level hole traps in Ga(In)NP alloys grown by molecular beam epitaxy(MBE). The energy level positions of the traps are determined to be at 0.56 eV and 0.78 eV above the top of the valance band. We show that photo-excitation of the holes from the traps, by a secondary light source with a photonenergy below the bandgapenergy, can lead to a strong enhancement (up to 25%) of the PL emissions from the alloys under a primary optical excitation above the bandgapenergy. We further demonstrate that the same hole traps can be found in various MBE-grown Ga(In)NP alloys, regardless of their growth temperatures, chemical compositions, and strain. The extent of the PL enhancement induced by the hole de-trapping is shown to vary between different alloys, however, likely reflecting their different trap concentrations. The absence of theses traps in the GaNP alloy grown by vapor phase epitaxy suggests that their incorporation could be associated with a contaminant accompanied by the N plasma source employed in the MBEgrowth, possibly a Cu impurity.

  • 42.
    Dagnelund, Daniel
    et al.
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials.
    Vorona, Igor
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
    Wang, Xingjun
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials.
    Buyanova, Irina
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials.
    Chen, Weimin
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials.
    Geelhaar, L.
    Riechert, H.
    Optically detected cyclotron resonance studies of InxGa1-xNyAs1-y/GaAs quantum wells sandwiched between type-II AlAs/GaAs superlattices.2007In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 101, p. 073705-Article in journal (Refereed)
    Abstract [en]

      We report on our results from a systematic study of layered structures containing an InGaNAs/GaAs single quantum well (SQW) enclosed between staggered type II AlAs/GaAs superlattices (SL), by the photoluminescence (PL) and optically detected cyclotron resonance (ODCR) techniques. Besides the ODCR signal known to originate from electrons in GaAs, the predominant ODCR peak is shown to be related to carriers with a two-dimensional character and a cyclotron resonance effective mass of m*[approximate](0.51-0.56)m0. The responsible carriers are ascribed to electrons on the ellipsoidal equienergy surface at the AlAs X point of the Brillouin zone within the SL, based on results from angular and spectral dependences of the ODCR signal. No ODCR signal related to the InGaNAs SQW was detected, presumably due to low carrier mobility despite the high optical quality. Multiple absorption of photons with energy below the band gap energy of the SL and the GaAs barriers was observed, which bears implication on the efficiency of light-emitting devices based on these structures.

  • 43.
    Dagnelund, Daniel
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials. Linköping University, The Institute of Technology.
    Vorona, I.P.
    Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kiev, Ukraine .
    Nosenko, G.
    Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kiev, Ukraine .
    Wang, X. J.
    National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China .
    Tu, C. W.
    Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California, USA .
    Yonezu, H.
    Department of Electrical and Electronic Engineering, Toyohashi University of Technology, Japan .
    Polimeni, A.
    INFM and Dipartimento di Fisica, Università di Roma “La Sapienza”, Roma, Italy.
    Capizzi, M.
    INFM and Dipartimento di Fisica, Universita` di Roma “La Sapienza”, Piazzale A. Moro 2,.
    Chen, Weimin
    Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials. Linköping University, The Institute of Technology.
    Buyanova, Irina
    Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials. Linköping University, The Institute of Technology.
    Effects of hydrogenation on non-radiative defects in GaNP and GaNAs alloys: An optically detected magnetic resonance study2012In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 111, no 023501Article in journal (Refereed)
    Abstract [en]

    Photoluminescence and optically detected magnetic resonance techniques are utilized to study defect properties of GaNP and GaNAs alloys subjected to post-growth hydrogenation by low-energy sub-threshold ion beam irradiation. It is found that in GaNP H incorporation leads to activation of new defects, which has a Ga interstitial (Ga-i) atom at its core and may also involve a H atom as a partner. The observed activation critically depends on the presence of N in the alloy, as it does not occur in GaP with a low level of N doping. In sharp contrast, in GaNAs hydrogen is found to efficiently passivate Ga-i-related defects present in the as-grown material. A possible mechanism responsible for the observed difference in the H behavior in GaNP and GaNAs is discussed.

  • 44.
    Dahlqvist, Martin
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Alling, Björn
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Rosén, Johanna
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Correlation between magnetic state and bulk modulus of Cr2AlC2013In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 113, no 21Article in journal (Refereed)
    Abstract [en]

    The effect of magnetism on the bulk modulus (B0) of M2AlC (M  = Ti, V, and Cr) has been studied using first principles calculations. We find that it is possible to identify an energetically favorable magnetic Cr2AlC phase without using any adjustable parameter, such as the Hubbard U. Furthermore, we show that an in-plane spin polarized configuration has substantially lower B0 as compared to the non-magnetic model. The existences of local magnetic moments on Cr atoms considerably improve agreement between theory and experiment regarding trends in B0 for M2AlC phases.

  • 45.
    Dannetun, Helen
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Applied Physics. Linköping University, The Institute of Technology.
    Lundström, Ingemar
    Linköping University, Department of Physics, Chemistry and Biology, Applied Physics. Linköping University, The Institute of Technology.
    Petersson, L.-G.
    Detection of hydrogen from the photodissociative splitting of water through hydrogen-oxygen separation over a thin Pd film1991In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 70, p. 453-Article in journal (Refereed)
    Abstract [en]

    The photodissociative splitting of water has been studied in gas phase on a plane solid surface. A hydrogen sensitive Pd‐metal‐oxide‐semiconductor (MOS) structure was coated with 1–2 nm TiOx and exposed to water vapor and ultraviolet light. A natural separation of the produced hydrogen and oxygen occurs over the Pd film of the structure and the produced hydrogen is monitored by the electric behavior of the MOS device. The results suggest that suitably treated thin Pd membranes may be of interest for studying the continuous photodissociation of water.

  • 46.
    Dannetun, Helen
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Applied Physics. Linköping University, The Institute of Technology.
    Lundström, Ingemar
    Linköping University, Department of Physics, Chemistry and Biology, Applied Physics. Linköping University, The Institute of Technology.
    Petersson, L.-G.
    Hydrocarbon dissociation on palladium studied with a hydrogen sensitive MOS structure1988In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 63, p. 207-Article in journal (Refereed)
    Abstract [en]

    The polycrystalline Pd surface of a hydrogen sensitive palladium‐silicon dioxide‐silicon [Pd‐MOS (metal‐oxide‐semiconductor)] structure has been exposed to small unsaturated hydrocarbons in the temperature range 300–500 K. Apart from the hydrogen response of the Pd‐MOS structure also work function (ΔΦ) and electron energy‐loss studies were performed. At 500 K the hydrocarbons dissociate completely upon adsorption and produce a surface with atomically adsorbed carbon. The Pd‐MOS structure can be used to observe both the dehydrogenation of the hydrocarbon molecules and the process of carbon adsorbing on the palladium surface. The sticking coefficient at this temperature for all hydrocarbons is close to unity. Furthermore, the hydrogen sensitivity of the structure is not drastically reduced by the adsorbed carbon. If the hydrocarbon adsorption is performed at 300 K there is still, at least on the initially clean surface, a large dehydrogenation. The dissociation is, however, not at all complete and there are considerable amounts of hydrocarbon species adsorbed for each gas. The induced work function shifts due to the different hydrocarbons vary from -1.0 to -1.7 eV. The hydrogen sensitivity of the Pd‐MOS structure is reduced for growing hydrocarbon coverages and disappears completely for work function shifts of -1.7 eV.

  • 47.
    Dannetun, Helen
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Applied Physics. Linköping University, The Institute of Technology.
    Petersson, L.-G.
    NO dissociation on polycrystalline Pd studied with a Pd-metal-oxide-semiconductor (Pd-MOS) structure1989In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 66, p. 1397-Article in journal (Refereed)
    Abstract [en]

    The dissociation probability of NO when adsorbed on polycrystalline Pd as a function of temperature (323–523 K) has been studied with a Pd‐metal‐oxide‐semiconductor (Pd‐MOS) structure. For comparison the same experiments were also carried out with O2, which adsorbs dissociatively in the whole temperature region, and with CO, which adsorbs molecularly. It was found that the Pd‐MOS structure can be used as a very sensitive sensor for NO dissociation and that dissociation of NO starts to be significant at temperatures around 400 K. The results are also compared with electron‐energy‐loss spectroscopy, ultraviolet photoemission spectroscopy, work‐function, and desorption studies.

  • 48.
    Darakchieva, Vanya
    et al.
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    Beckers, Manfred
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics.
    Xie, Mengyao
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Hultman, Lars
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics.
    Monemar, Bo
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Carlin, J-. F.
    Feltin, E.
    Gonschorek, M.
    Grandjean, N.
    Effects of strain and composition on the lattice parameters and applicability of Vegard's rule in Al-rich Al1-x Inx N films grown on sapphire2008In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 103, no 10, p. 103513-Article in journal (Refereed)
    Abstract [en]

    The lattice parameters and strain evolution in Al1-x In x N films with 0.07≤x≤0.22 grown on GaN-buffered sapphire substrates by metal organic vapor phase epitaxy have been studied by reciprocal space mapping. Decoupling of compositional effects on the strain determination was accomplished by measuring the In contents in the films both by Rutherford backscattering spectrometry (RBS) and x-ray diffraction (XRD). Differences between XRD and RBS In contents are discussed in terms of compositions and biaxial strain in the films. It is suggested that strain plays an important role for the observed deviation from Vegard's rule in the case of pseudomorphic films. On the other hand, a good agreement between the In contents determined by XRD and RBS is found for Al1-x Inx N films with low degree of strain or partially relaxed, suggesting applicability of Vegard's rule in the narrow compositional range around the lattice matching to GaN. © 2008 American Institute of Physics.

  • 49.
    Darakchieva, Vanya
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Lorenz, K
    CFNUL.
    Xie, Mengyao
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Alves, E
    CFNUL.
    Hsiao, C L
    National Taiwan University.
    Chen, L C
    National Taiwan University.
    Tu, L W
    National Sun Yat Sen University.
    Schaff, W J
    Cornell University.
    Yamaguchi, T
    Ritsumeikan University.
    Nanishi, Y
    Ritsumeikan University.
    Unintentional incorporation of hydrogen in wurtzite InN with different surface orientations2011In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 110, no 6, p. 063535-Article in journal (Refereed)
    Abstract [en]

    We have studied hydrogen impurities and related structural properties in state-of-the-art wurtzite InN films with polar, nonpolar, and semipolar surface orientations. The effects of thermal annealing and chemical treatment on the incorporation and stability of H are also discussed. The near-surface and bulk hydrogen concentrations in the as-grown films increase when changing the surface orientation from (0001) to (000 (1) over bar) to (1 (1) over bar 01) and to (11 (2) over bar0), which may be associated with a decrease in the grain size and change of the growth mode from 2D to 3D. Thermal annealing at 350 degrees C in N(2) leads to a reduction of H concentrations and the intrinsic levels of bulk H are found to correlate with the structural quality and defects in the annealed films.

  • 50.
    Darakchieva, Vanya
    et al.
    Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
    Paskova, Tanja
    Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
    Paskov, Plamen
    Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
    Monemar, Bo
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    Ashkenov, N.
    Schubert, M.
    Structural characteristics and lattice parameters of hydride vapor phase epitaxial GaN free-standing quasisubstrates2005In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 97, no 1, p. 013517-Article in journal (Refereed)
    Abstract [en]

    We have studied the lattice parameters of hydride vapor phase epitaxy (HVPE)-GaN quasisubstrates in relation to their structural properties. Layers grown on single-layer metalorganic vapor phase epitaxy (MOVPE) templates and on epitaxial lateral overgrown MOVPE templates are characterized by Raman scattering, high-resolution x-ray diffraction, and reciprocal space mapping. The strain relaxation in the films versus their thickness was found to proceed similarly in the GaN samples grown using the two types of templates but the strain saturates at different nonzero levels. The lattice parameters of relatively thin HVPE-GaN free-standing quasisubstrates indicate that no total strain relaxation is achieved after the sapphire removal. The lattice parameters of the thick quasisubstrates grown on different templates are not affected by the separation process and are found to have values very close to the reference strain-free lattice parameters of GaN powder. © 2005 American Institute of Physics.

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