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  • 1.
    Beshkova, M.
    et al.
    Bulgarian Academy of Science, Sofia, Bulgaria.
    Zakhariev, Z.
    Bulgarian Academy of Science, Sofia, Bulgaria.
    Abrashev, M. V.
    University of Sofia, Bulgaria.
    Birch, Jens
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Postovit, A.
    Institute of Problem Microelectronics Technology and High Purity Materials, Moskow, Russia.
    Yakimova, Rositsa
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Properties of AlN epitaxial layers on 6H-SiC substrate grown by sublimation in argon, nitrogen, and their mixtures2006In: Materials Science & Engineering: B. Solid-state Materials for Advanced Technology, ISSN 0921-5107, E-ISSN 1873-4944, Vol. 129, no 1-3, p. 228-231Article in journal (Refereed)
    Abstract [en]

    Epitaxial layers of aluminum nitride (AlN) have been grown at temperature 1900 °C on 10 mm × 10 mm 6H-SiC substrate via sublimation-recondensation in RF heated graphite furnace. The source material was polycrystalline sintered AlN. Growth of AlN layers in pure nitrogen, mixed nitrogen/argon and pure argon atmosphere of 50 mbar were compared. A maximum growth rate of about 30 µm/h was achieved in pure nitrogen atmosphere. The surface morphology reflects the hexagonal symmetry of the seed, which is characteristic of an epitaxial growth for samples grown in a pure nitrogen and mixed nitrogen/argon atmosphere. X-ray diffraction (XRD) measurements show very strong and well defined (0 0 0 2) reflection positioned at around 36° in symmetric ?-2? scans. Micro-Raman spectroscopy reveals that the films have a wurtzite structure. Secondary-ion mass spectroscopy (SIMS) results showed a low concentration of carbon incorporation in the AlN layers. This study demonstrates that nitrogen is necessary for the successful epitaxial growth of AlN on 6H-SiC by sublimation. © 2006 Elsevier B.V. All rights reserved.

  • 2.
    Buyanova, Irina A.
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials. Linköping University, The Institute of Technology.
    Chen, Weimin
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials.
    Pozina, Galia
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Hai, P.N.
    Monemar, Bo
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Xin, H.P.
    Department of Electrical and Computer Engineering, University of California, San Diego, CA 92093-0407, United States.
    Tu, C.W.
    Department of Electrical and Computer Engineering, University of California, San Diego, CA 92093-0407, United States.
    Optical properties of GaNAs/GaAs structures2001In: Materials Science & Engineering: B. Solid-state Materials for Advanced Technology, ISSN 0921-5107, E-ISSN 1873-4944, Vol. 82, no 1-3, p. 143-147Article in journal (Refereed)
    Abstract [en]

    We review our recent results on optical characterization of MBE-grown GaNAs/GaAs quantum structures with N content up to 4.5%, by employing photoluminescence (PL), PL excitation, and time-resolved PL spectroscopies. The dominant PL mechanism has been determined as recombination of excitons trapped by potential fluctuations of the band edge, due to composition disorder and strain nonuniformity of the alloy. The estimated value of the localization potential is around 60 meV for the low-temperature grown structures and can be reduced by increasing the growth temperature or using post-growth rapid thermal annealing (RTA). © 2001 Elsevier Science S.A.

  • 3.
    Buyanova, Irina A.
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials. Linköping University, The Institute of Technology.
    Monemar, Bo
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Lindstrom, J.L.
    Lindström, J.L., Solid State Physics, Univ. of Lund, Box 118, S-221 00, Lund, Sweden.
    Hallberg, T.
    Murin, L.I.
    Inst. Solid Stt. Semiconduct. Phys., 220072, Minsk, Belarus.
    Markevich, V.P.
    Inst. Solid Stt. Semiconduct. Phys., 220072, Minsk, Belarus.
    Photoluminescence characterization of defects created in electron-irradiated silicon at elevated temperatures2000In: Materials Science & Engineering: B. Solid-state Materials for Advanced Technology, ISSN 0921-5107, E-ISSN 1873-4944, Vol. 72, no 2, p. 146-149Article in journal (Refereed)
    Abstract [en]

    Photoluminescence (PL) spectroscopy is employed to investigate radiative defects created in Si during electron-irradiation at elevated temperatures. The use of high temperature during electron irradiation has been found to affect considerably the defect formation process. The effect critically depends on the temperature of the irradiation as well as doping of the samples. For carbon-lean Si wafers high temperature electron irradiation stimulates the formation of extended defects, such as dislocations and precipitates. For carbon-rich Si wafers the increase of irradiation temperature up to 300°C enhances the formation of the known carbon-related defects. In addition, several new excitonic PL lines were observed after electron irradiation at T = 450°C. The dominant new PL center gives rise to a BE PL emission at 0.961 eV. The electronic structure of the 0.961 eV defect is discussed based on temperature-dependent and magneto-optical studies.

  • 4.
    Buyanova, Irina
    et al.
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials.
    Chen, Weimin
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials.
    Monemar, Bo
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Xin, H. P.
    Tu, C. W.
    Photoluminescence characterization of GaNAs/GaAs structures grown by molecular beam epitaxy2000In: Materials Science & Engineering: B. Solid-state Materials for Advanced Technology, ISSN 0921-5107, E-ISSN 1873-4944, Vol. 75, no 2-3, p. 166-169Article in journal (Refereed)
    Abstract [en]

    A number of optical spectroscopies, including photoluminescence (PL), PL excitation and cathodoluminescence, are employed for characterization of GaNAs epilayers and GaAs/GaNxAs1-x quantum well structures grown by gas source molecular beam epitaxy at low temperature. The existence of strong potential fluctuations in the band edge of the GaNAs alloy is concluded, even for the samples with high optical quality, from a detailed analysis of the characteristic properties of the GaNAs-related PL emission. Based on the observed similarity in the PL properties between the GaNAs epilayers and the QW structures, the potential fluctuations are suggested to be mainly due to composition disorder and strain nonuniformity of the alloy. ⌐ 2000 Elsevier Science S.A. All rights reserved.

  • 5.
    Du, Chun-Xia
    et al.
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
    Duteil, F.
    Hansson, Göran
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Surface and Semiconductor Physics .
    Ni, Wei-Xin
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Surface and Semiconductor Physics .
    Efficient 1.54 µm light emission from Si/SiGe/Si: Er2001In: Materials Science & Engineering: B. Solid-state Materials for Advanced Technology, ISSN 0921-5107, E-ISSN 1873-4944, Vol. 81, no 1-3, p. 105-108Article in journal (Refereed)
    Abstract [en]

    Si/SiGe/Si:Er:O-heterojunction bipolar transistor (HBT)-type light emitting devices with Er3+ ions incorporated in the collector region have been fabricated using layered structures prepared by differential molecular beam epitaxy (MBE). Intense light emission at 1.54 µm has been observed at room temperature by hot electron impact excitation at rather low injection current and applied voltage. Separate controls of the injection current and bias voltage make it possible to perform detailed electroluminescence (EL) studies that can not be done with conventional Si:Er light emitting diodes (LEDs). Saturation of the EL intensity occurs at very low current densities indicating a 100-fold increase of the effective excitation cross-section for Si/SiGe/Si:Er:O-HBTs compared with Si:Er-LEDs. © 2001 Elsevier Science B.V.

  • 6. Hai, P. N.
    et al.
    Chen, Weimin
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials.
    Buyanova, Irina
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials.
    Monemar, Bo
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    Xin, H. P.
    Tu, C. W.
    Properties of GaAsN/GaAs quantum wells studied by optical detection of cyclotron resonance2001In: Materials Science & Engineering: B. Solid-state Materials for Advanced Technology, ISSN 0921-5107, E-ISSN 1873-4944, Vol. 82, no 1-3, p. 218-220Article in journal (Refereed)
    Abstract [en]

    Effective masses and carrier recombination in GaNAs/GaAs quantum wells (QWs) with nitrogen composition up to 4.5%, have been studied by optical detection of cyclotron resonance (ODCR). When monitoring the PL emissions under the conditions of above-GaAs barrier excitation, the ODCR spectrum is dominated by the electron CR in GaAs with an effective mass value 0.066m0. The ODCR mechanism is discussed in terms of hot carrier effects, resulting in a reduced carrier recombination in GaAs and an enhanced carrier trapping in the GaNAs QW. Under resonant excitation of the GaNAs QWs, only a broad ODCR signal can be observed, corresponding to an effective mass value of 0.12m0 and 0.19m0 when the N composition is about 1.2 and 2%, respectively. This is attributed to the electron CR in the GaNAs QW with a lower electron mobility. This sizeable increase in the electron effective mass is in agreement with earlier theoretical predictions. ⌐ 2001 Elsevier Science B.V.

  • 7.
    Khun, Kimleang
    et al.
    Linköping University, Department of Science and Technology, Physics and Electronics. Linköping University, The Institute of Technology.
    Ibupoto, Z. H.
    University of Sindh Jamshoro, Pakistan.
    Liu, X.
    Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
    Beni, Valerio
    Linköping University, Department of Physics, Chemistry and Biology, Biosensors and Bioelectronics. Linköping University, The Institute of Technology.
    Willander, Magnus
    Linköping University, Department of Science and Technology, Physics and Electronics. Linköping University, The Institute of Technology.
    The ethylene glycol template assisted hydrothermal synthesis of Co3O4 nanowires; structural characterization and their application as glucose non-enzymatic sensor2015In: Materials Science & Engineering: B. Solid-state Materials for Advanced Technology, ISSN 0921-5107, E-ISSN 1873-4944, Vol. 194, p. 94-100Article in journal (Refereed)
    Abstract [en]

    In the work reported herein the ethylene glycol template assisted hydrothermal synthesis, onto Au substrate, of thin and highly dense cobalt oxide (Co3O4) nanowires and their characterization and their application for non-enzymatic glucose sensing are reported. The structure and composition of Co3O4 nanowires have been fully characterized using scanning electron microscopy, X-ray diffraction, high resolution transmission electron microscopy and X-ray photoelectron spectroscopy. The synthesized Co3O4 nanowires resulted to have high purity and showed diameter of approximately 10 nm. The prepared Co3O4 nanowires coated gold electrodes were applied to the non-enzymatic detection of glucose. The developed sensor showed high sensitivity (4.58 x 10(1) mu A mM(-1) cm(-2)), a wide linear range of concentration (1.00 x 10(-4)-1.2 x 10(1) mM) and a detection limit of 2.65 x 10(-5) mM. The developed glucose sensor has also shown to be very stable and selective over interferents such as uric acid and ascorbic acid. Furthermore, the proposed fabrication process was shown to be highly reproducible response (over nine electrodes).

  • 8.
    Osterman, J.
    et al.
    Department of Microelectronics, Royal Institute of Technology, PO Box Electrum 229, S 164 40 Kista, Sweden.
    Abtin, L.
    Department of Microelectronics, Royal Institute of Technology, PO Box Electrum 229, S 164 40 Kista, Sweden.
    Zimmermann, U.
    Department of Microelectronics, Royal Institute of Technology, PO Box Electrum 229, S 164 40 Kista, Sweden.
    Janson, M.S.
    Department of Microelectronics, Royal Institute of Technology, PO Box Electrum 229, S 164 40 Kista, Sweden.
    Anand, S.
    Department of Microelectronics, Royal Institute of Technology, PO Box Electrum 229, S 164 40 Kista, Sweden.
    Hallin, Christer
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
    Hallen, A.
    Hallén, A., Department of Microelectronics, Royal Institute of Technology, PO Box Electrum 229, S 164 40 Kista, Sweden.
    Scanning spreading resistance microscopy of aluminum implanted 4H-SiC2003In: Materials Science & Engineering: B. Solid-state Materials for Advanced Technology, ISSN 0921-5107, E-ISSN 1873-4944, Vol. 102, no 1-3, p. 128-131Conference paper (Other academic)
    Abstract [en]

    Results from the application of scanning spreading resistance microscopy (SSRM) for characterization of aluminum implanted 4H-SiC are presented. The implanted profiles are investigated electrically and morphologically as a function of post-implantation anneal conditions. The method is shown to be advantageous for measuring and optimizing the activation in many aspects with respect to existing alternative techniques: it provides information of the entire depth and Al concentration range, it is unaffected by annealing induced re-growth and/or surface roughening, and requires little sample preparation. The results indicate that the apparent activation and surface roughness do not saturate in the investigated temperature range of 1500-1650 °C. Finally, an apparent activation energy for the process of 3 eV is estimated. © 2003 Elsevier B.V. All rights reserved.

  • 9.
    Paul, D.J.
    et al.
    Cavendish Laboratory, University of Cambridge, Madingley Road, Cambridge CB3 0HE, United Kingdom.
    See, P.
    Cavendish Laboratory, University of Cambridge, Madingley Road, Cambridge CB3 0HE, United Kingdom.
    Zozoulenko, Igor
    Linköping University, The Institute of Technology. Linköping University, Department of Science and Technology.
    Berggren, Karl-Fredrik
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Theoretical Physics .
    Hollander, B.
    Holländer, B., Institut Für Schicht und Ionentechnik, Forschungszentrum Jülich, D-52425 Jülich, Germany.
    Mantl, S.
    Institut Für Schicht und Ionentechnik, Forschungszentrum Jülich, D-52425 Jülich, Germany.
    Griffin, N.
    National Microelectronics Research Centre, University College Cork, Lee Maltings, Prospect Row, Cork, Ireland.
    Coonan, B.P.
    National Microelectronics Research Centre, University College Cork, Lee Maltings, Prospect Row, Cork, Ireland.
    Redmond, G.
    National Microelectronics Research Centre, University College Cork, Lee Maltings, Prospect Row, Cork, Ireland.
    Crean, G.M.
    National Microelectronics Research Centre, University College Cork, Lee Maltings, Prospect Row, Cork, Ireland.
    n-type Si/SiGe resonant tunnelling diodes2002In: Materials Science & Engineering: B. Solid-state Materials for Advanced Technology, ISSN 0921-5107, E-ISSN 1873-4944, Vol. 89, no 1-3, p. 26-29Conference paper (Other academic)
    Abstract [en]

    Resonant tunnelling diodes (RTDs) have been fabricated using Si/SiGe heterolayers which demonstrate room temperature performance comparable to III-V technology. Peak current densities up to 282 kA cm-2 with peak-to-valley current ratios (PVCRs) of 2.4 have been demonstrated at room temperature in devices with dimensions of 5 × 5 µm2. Scaling the device size demonstrates that the peak current density is inversely proportional to the device area. It is suggested that this is related to thermal limitations in the device structure. Estimates are also produced for the maximum frequency of oscillations of the diodes which suggest that oscillators may operate with speeds comparable to III-V diodes. © 2002 Elsevier Science B.V. All rights reserved.

  • 10.
    Pozina, Galia
    et al.
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Bergman, Peder
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Monemar, Bo
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Yamaguchi, S.
    Department of Electrical Engineering and Electronics, High-Tech Research Center, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan.
    Amano, H.
    Department of Electrical Engineering and Electronics, High-Tech Research Center, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan.
    Akasaki, I.
    Department of Electrical Engineering and Electronics, High-Tech Research Center, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan.
    Time-resolved optical properties of GaN grown by metalorganic vapor phase epitaxy with indium surfactant2001In: Materials Science & Engineering: B. Solid-state Materials for Advanced Technology, ISSN 0921-5107, E-ISSN 1873-4944, Vol. 82, no 1-3, p. 137-139Article in journal (Refereed)
    Abstract [en]

    The effects of isoelectronic indium doping on optical properties of GaN layers grown by metalorganic vapor-phase epitaxy have been studied. Two sets of samples have been grown with hydrogen and with nitrogen as carrier gas. It has been shown from scanning electron microscopy, cathodoluminescence and time-resolved photoluminescence that In-doped samples have a lower dislocation density, a narrower photoluminescence line width and a longer free exciton lifetime. The improvements of structural and optical properties are attributed to the effect of In on dislocations. © 2001 Elsevier Science B.V.

  • 11.
    Schmidt, DC
    et al.
    Royal Inst Technol, S-16440 Kista, Sweden Univ Poitiers, CNRS, UMR 6630, Met Phys Lab, F-86960 Futuroscope, France Natl Def Res Inst, S-58111 Linkoping, Sweden.
    Aberg, D
    Royal Inst Technol, S-16440 Kista, Sweden Univ Poitiers, CNRS, UMR 6630, Met Phys Lab, F-86960 Futuroscope, France Natl Def Res Inst, S-58111 Linkoping, Sweden.
    Svensson, BG
    Lindstrom, JL
    Barbot, JF
    Royal Inst Technol, S-16440 Kista, Sweden Univ Poitiers, CNRS, UMR 6630, Met Phys Lab, F-86960 Futuroscope, France Natl Def Res Inst, S-58111 Linkoping, Sweden.
    Blanchard, C
    Royal Inst Technol, S-16440 Kista, Sweden Univ Poitiers, CNRS, UMR 6630, Met Phys Lab, F-86960 Futuroscope, France Natl Def Res Inst, S-58111 Linkoping, Sweden.
    The evolution of interstitial-type defects in silicon during platinum diffusion from 400 to 600 degrees C following 2-MeV electron irradiation1999In: Materials Science & Engineering: B. Solid-state Materials for Advanced Technology, ISSN 0921-5107, E-ISSN 1873-4944, Vol. 68, no 2, p. 67-71Article in journal (Refereed)
    Abstract [en]

    Platinum has been diffused into epitaxial n-type silicon for 30 min at temperatures from 400 to 600 degrees C following room temperature irradiation with 2-MeV electrons at a dose of 1 x 10(17) e(-) cm(-2). Platinum has only been detected by deep level transient spectroscopy (DLTS) following the highest diffusion temperature. For lower temperatures defects, not previously reported. arise which are thought to be of interstitial nature. The two principal defect levels are determined to be located at 0.29 and 0.41 eV below the conduction band. The compensation for the two lowest diffusion temperatures is observed to be extremely strong as manifested by a strong reduction of the steady state reverse bias capacitance during the DLTS measurements. Following thermal treatment at 500 degrees C this capacitance, however, increases. DLTS measurements down to 20 K detected thermal donors as well as a number of other defects not previously reported. Their signatures have been determined by DLTS and TSCap (thermally stimulated capacitance) measurements. The nature of the observed defects is discussed with reference to recent results concerning interstitial defects. (C) 1999 Elsevier Science S.A. All rights reserved.

  • 12. Valcheva, E.
    et al.
    Paskova, Tanja
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
    Abrashev, M.V.
    Faculty of Physics, Sofia University, 5, J. Bourchier blvd., Sofia 1164, Bulgaria.
    Persson, Per
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics.
    Paskov, Plamen
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Goldys, E.M.
    Semiconductor Science and Technology Laboratories, Macquarie University, Sydney, NSW 2109, Australia.
    Beccard, R.
    Aixtron AG, D-52072 Aachen, Germany.
    Heuken, M.
    Aixtron AG, D-52072 Aachen, Germany.
    Monemar, Bo
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Impact of MOCVD-GaN 'templates' on the spatial non-uniformities of strain and doping distribution in hydride vapour phase epitaxial GaN2001In: Materials Science & Engineering: B. Solid-state Materials for Advanced Technology, ISSN 0921-5107, E-ISSN 1873-4944, Vol. 82, no 1-3, p. 35-38Article in journal (Refereed)
    Abstract [en]

    Thick HVPE-GaN layers are grown on Si-doped and undoped MOCVD-GaN 'template' layers as well as directly on sapphire, with the aim to investigate the effect of the MOCVD template on the strain relaxation and spatial distribution of free carriers in the overgrown HVPE films. Spatially resolved cross-sectional micro-Raman measurements, cathodoluminescence and transmission electron microscopy show improved crystalline quality resulting in elimination of the non-uniformities of electron distribution, a low free carrier concentration (< 1017 cm-3) as well as a significant strain relaxation effect. © 2001 Elsevier Science B.V.

  • 13.
    Vetter, W.M.
    et al.
    Department of Materials Science, Stt. Univ. New York at Stony Brook, Stony Brook, NY 11794-2275, United States.
    Liu, J.Q.
    Department of Materials Science, Carnegie Mellon University, Pittsburgh, PA 15213-3890, United States.
    Dudley, M.
    Department of Materials Science, Stt. Univ. New York at Stony Brook, Stony Brook, NY 11794-2275, United States.
    Skowronski, M.
    Department of Materials Science, Carnegie Mellon University, Pittsburgh, PA 15213-3890, United States.
    Lendenmann, H.
    ABB Group Services Center, SE-721 78 Västerås, Sweden.
    Hallin, Christer
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
    Dislocation loops formed during the degradation of forward-biased 4H-SiC p-n junctions2003In: Materials Science & Engineering: B. Solid-state Materials for Advanced Technology, ISSN 0921-5107, E-ISSN 1873-4944, Vol. 98, no 3, p. 220-224Article in journal (Refereed)
    Abstract [en]

    The partial dislocations that border triangle or parallelogram-shaped stacking faults formed during the degradation of p-n diodes fabricated on 4H-SiC wafers were determined by transmission X-ray topography to be dislocation loops of Burgers vector 1/3<101¯0>, the Shockley partial type, consistent with previously reported TEM results. Some were separated from axial screw dislocations also present in the sample, indicating that the axial dislocations were not involved in the loops' nucleation, while others were seen to have interacted during their growth with the axial screw dislocations, distorting their shapes from those of ideal parallelograms. © 2003 Elsevier Science B.V. All rights reserved.

  • 14.
    Wang, Z. Q.
    et al.
    Nanjing University, Peoples R China.
    Gao, Feng
    Linköping University, Department of Physics, Chemistry and Biology, Biomolecular and Organic Electronics. Linköping University, The Institute of Technology.
    Wang, K. F.
    Nanjing University, Peoples R China.
    Yu, H.
    Nanjing University, Peoples R China.
    Ren, Z. F.
    Nanjing University, Peoples R China.
    Liu, J. -M.
    Nanjing University, Peoples R China.
    Synthesis and magnetic properties of Pr0.57Ca0.43MnO3 nanoparticles2007In: Materials Science & Engineering: B. Solid-state Materials for Advanced Technology, ISSN 0921-5107, E-ISSN 1873-4944, Vol. 136, no 1, p. 96-100Article in journal (Refereed)
    Abstract [en]

    Pr0.57Ca0.43MnO3 nanoparticles with an average particle size of similar to 20 nm have been synthesized using hydrothermal method in combination with post-annealing, and characterized using X-ray diffraction, X-ray photoelectron spectrometer, high-resolution transmission electron microscopy and superconducting quantum interference device magnetometery. The results show that the hydrothermal synthesis of Pr1-xCaxMnO3 compound below 240 degrees C is difficult. The Pr0.57Ca0.43MnO3 nanoparticles obtained by annealing the hydrothermal products at 900 degrees C for 2 h present an orthorhombic perovskite structure with the same lattice as bulk Pr0.6Sr0.4MnO3. Magnetic characterization reveals that the low-temperature antiferromagnetic and charge ordering transitions identified in bulk Pr0.57Ca0.43MnO3 are completely suppressed in the nanoparticles, while a ferromagnetic transition occurs at -110 K. The spin-freezing behavior at low temperature for the Pr0.57Ca0.43MnO3 nanoparticles is demonstrated. (c) 2006 Elsevier B.V. All rights reserved.

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