liu.seSearch for publications in DiVA
Change search
Refine search result
1 - 3 of 3
CiteExportLink to result list
Permanent link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Rows per page
  • 5
  • 10
  • 20
  • 50
  • 100
  • 250
Sort
  • Standard (Relevance)
  • Author A-Ö
  • Author Ö-A
  • Title A-Ö
  • Title Ö-A
  • Publication type A-Ö
  • Publication type Ö-A
  • Issued (Oldest first)
  • Issued (Newest first)
  • Created (Oldest first)
  • Created (Newest first)
  • Last updated (Oldest first)
  • Last updated (Newest first)
  • Disputation date (earliest first)
  • Disputation date (latest first)
  • Standard (Relevance)
  • Author A-Ö
  • Author Ö-A
  • Title A-Ö
  • Title Ö-A
  • Publication type A-Ö
  • Publication type Ö-A
  • Issued (Oldest first)
  • Issued (Newest first)
  • Created (Oldest first)
  • Created (Newest first)
  • Last updated (Oldest first)
  • Last updated (Newest first)
  • Disputation date (earliest first)
  • Disputation date (latest first)
Select
The maximal number of hits you can export is 250. When you want to export more records please use the Create feeds function.
  • 1.
    Chubarov, M.
    et al.
    Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology. Not Found: Linkoping Univ, Dept Phys Chem and Biol, SE-58183 Linkoping, Sweden .
    Pedersen, Henrik
    Linköping University, Department of Physics, Chemistry and Biology, Chemistry. Linköping University, The Institute of Technology.
    Högberg, Hans
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Czigany, Zs.
    Hungarian Academic Science, Hungary .
    Henry, Anne
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Chemical vapour deposition of epitaxial rhombohedral BN thin films on SiC substrates2014In: CrystEngComm, ISSN 1466-8033, E-ISSN 1466-8033, Vol. 16, no 24, p. 5430-5436Article in journal (Refereed)
    Abstract [en]

    Epitaxial growth of rhombohedral boron nitride (r-BN) on different polytypes of silicon carbide (SiC) is demonstrated using thermally activated hot-wall chemical vapour deposition and triethyl boron and ammonia as precursors. With respect to the crystalline quality of the r-BN films, we investigate the influence of the deposition temperature, the precursor ratio (N/B) and the addition of a minute amount of silicon to the gas mixture. From X-ray diffraction and transmission electron microscopy, we find that the optimal growth temperature for epitaxial r-BN on the Si-face of the SiC substrates is 1500 degrees C at a N/B ratio of 642 and silicon needs to be present not only in the gas mixture during deposition but also on the substrate surface. Such conditions result in the growth of films with a c-axis identical to that of the bulk material and a thickness of 200 nm, which is promising for the development of BN films for electronic applications.

  • 2.
    Chubarov, Mikhail
    et al.
    Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
    Pedersen, Henrik
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Högberg, Hans
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Henry, Anne
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    On the effect of silicon in CVD of sp2 hybridized boron nitride thin films2013In: CrystEngComm, ISSN 1466-8033, E-ISSN 1466-8033, Vol. 15, no 3, p. 455-458Article in journal (Refereed)
    Abstract [en]

    The influence of silicon on the growth of epitaxial rhombohedral boron nitride (r-BN) films deposited on sapphire (0001) by chemical vapor deposition is investigated. X-ray diffraction measurements and secondary ion mass spectrometry show that silicon favors the formation of r-BN and is incorporated into the film.

  • 3.
    Metaferia, Wondwosen
    et al.
    KTH, Sweden .
    Dev, Apurba
    KTH, Sweden .
    Kataria, Himanshu
    KTH, Sweden .
    Junesand, Carl
    KTH, Sweden .
    Sun, Yan-Ting
    KTH, Sweden .
    Anand, Srinivasan
    KTH, Sweden .
    Tommila, Juha
    Tampere University of Technology, Finland .
    Pozina, Galia
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Guina, Mircea
    Tampere University of Technology, Finland .
    Niemi, Tapio
    Tampere University of Technology, Finland .
    Lourdudoss, Sebastian
    KTH, Sweden .
    High quality InP nanopyramidal frusta on Si2014In: CrystEngComm, ISSN 1466-8033, E-ISSN 1466-8033, Vol. 16, no 21, p. 4624-4632Article in journal (Refereed)
    Abstract [en]

    Nanosized octagonal pyramidal frusta of indium phosphide were selectively grown at circular hole openings on a silicon dioxide mask deposited on indium phosphide and indium phosphide pre-coated silicon substrates. The eight facets of the frusta were determined to be {111} and {110} truncated by a top (100) facet. The size of the top flat surface can be controlled by the diameter of the openings in the mask and the separation between them. The limited height of the frusta is attributed to kinetically controlled selective growth on the (100) top surface. Independent analyses with photoluminescence, cathodoluminescence and scanning spreading resistance measurements confirm certain doping enrichment in the frustum facets. This is understood to be due to crystallographic orientation dependent dopant incorporation. The blue shift from the respective spectra is the result of this enrichment exhibiting the Burstein-Moss effect. Very bright panchromatic cathodoluminescence images indicate that the top surfaces of the frusta are free from dislocations. The good optical and morphological quality of the nanopyramidal frusta indicates that the fabrication method is very attractive for the growth of site-, shape-, and number-controlled semiconductor quantum dot structures on silicon for nanophotonic applications.

1 - 3 of 3
CiteExportLink to result list
Permanent link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf