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  • 1.
    Jansson, Roger
    et al.
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
    Zangooie, S.
    Center for Microelectronic and Optical Materials Research, Department of Electrical Engineering, University of Nebraska, Lincoln, NE 68588-0511, United States.
    Kugler, T.
    Acreo AB, Interconncet and Packaging, Bredgatan 34, SE-602 21 Norrköping, Sweden.
    Arwin, Hans
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Applied Optics .
    Optical and microstructural characterization of thin films of photochromic fulgides2001In: Journal of Physics and Chemistry of Solids, ISSN 0022-3697, E-ISSN 1879-2553, Vol. 62, no 7, 1219-1228 p.Article in journal (Refereed)
    Abstract [en]

    Variable angle spectroscopic ellipsometry has been used for determining the optical properties, in terms of the complex dielectric function in the near UV-VIS-near IR spectral range, and the thicknesses of thin fulgide films of type E-a-(2,5-dimethyl-3-furyl)-ethylidene(adamantylidene)succinic anhydride and (E)-2-[a-(2,5-dimethyl-3-thienyl)ethylidene]-3-isopropylidenesuccinic anhydride. The films had thicknesses in the range 28-40 nm and were spin coated onto silicon substrates. To simultaneously extract film thicknesses and optical properties of the films, several methods of analysis were employed in order to decrease correlation between the fitting parameters in the optical model of the structure. In agreement with previous absorbance measurements done by others on similar materials in liquid or solid form, it was found that the fulgides studied have several resonances in the wavelength region below 400 nm and that new resonances appear in the middle of the visible region upon UV exposure. The ellipsometric analysis, as well as atomic force microscopy studies, showed that the films were very smooth with a root mean square surface roughness <0.4 nm and that a small thickness change of the film takes place upon UV exposure. Furthermore, AFM studies revealed that large phase changes take place when the samples are stored in darkness for several days, indicating that the materials are not stable in thin film form. © 2001 Elsevier Science Ltd.

  • 2.
    Mogulkoc, Y.
    et al.
    Ankara University, Turkey.
    Modarresi, Mohsen
    Linköping University, Department of Science and Technology, Physics and Electronics. Linköping University, Faculty of Science & Engineering. Ferdowsi University of Mashhad, Turkey.
    Mogulkoc, A.
    Ankara University, Turkey.
    Ciftci, Y. O.
    Gazi University, Turkey.
    Alkan, B.
    Ankara University, Turkey.
    First principle and tight-binding study of strained SnC2017In: Journal of Physics and Chemistry of Solids, ISSN 0022-3697, E-ISSN 1879-2553, Vol. 111, 458-463 p.Article in journal (Refereed)
    Abstract [en]

    We study the electronic and optical properties of strained single-layer SnC in the density functional theory (DFT) and tight-binding models. We extract the hopping parameters tight-binding Hamiltonian for monolayer SnC by considering the DFT results as a reference point. We also examine the phonon spectra in the scheme of DFT, and analyze the bonding character by using Mulliken bond population. Moreover, we show that the band gap modulation and transition from indirect to direct band gap in the compressive strained SnC. The applied tensile strain reduces the band gap and eventually the semiconductor to semimetal transition occurs for 7.5% of tensile strain. In the framework of tight-binding model, the effect of spin-orbit coupling on energy spectrum are also discussed. We indicate that while tensile strain closes the band gap, spin-orbit gap is still present which is order of similar to 40 meV at the Gamma point. The substrate effect is modeled through a staggered sub -lattice potential in the tight-binding approximation. The optical properties of pristine and strained SnC are also examined in the DFT scheme. We present the modulation of real and imaginary parts of dielectric function under applied strain.

  • 3.
    Mukhaylushkin, A.S.
    et al.
    Stockholm University.
    Simak, Sergey
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Theoretical Physics .
    Johansson, B.
    Royal Institute of Technology.
    Häussermann, U.
    Stockholm University.
    The role of orthorhombic distortions in gallium under high hydrostatic pressure2006In: Journal of Physics and Chemistry of Solids, ISSN 0022-3697, E-ISSN 1879-2553, Vol. 67, no 9-10, 2132-2135 p.Article in journal (Refereed)
    Abstract [en]

    We have performed a detailed analysis of the double-well feature of the total energy for the Ga-III phase as a function of tetragonal and orthorhombic distortions of the face-centered cubic (fcc) lattice. We demonstrate that in the low-pressure region this double-well feature disappears and only one minimum exists. In order to reveal this result, the possibility of orthorhombic distortions has to be taken into account. At elevated pressure between 58 and 84 GPa, the second minimum becomes pronounced, but never develops into a separate local minimum up to the transformation into the fcc phase. © 2006 Elsevier Ltd. All rights reserved.

  • 4.
    Shiryaev, A.A.
    et al.
    Shubnikov Institute of Crystallography RAS.
    Wiedenbeck, M.
    GeoForschungsZentrum.
    Reutsky, V.
    Institute of Geology and Mineralogy, SB RAS.
    Polyakov, V.B.
    Institute of Experimental Mineralogy RAS.
    Mel’nik, N.N.
    Lebedev Physics Institute RAS.
    Lebedev, A.A.
    Ioffe Physico-Technical Institute RAS.
    Yakimova, Rositsa
    Linköping University, Department of Physics, Chemistry and Biology, Materials Science . Linköping University, The Institute of Technology.
    Isotopic heterogeneity in synthetic and natural silicon carbide2008In: Journal of Physics and Chemistry of Solids, ISSN 0022-3697, E-ISSN 1879-2553, Vol. 69, no 10, 2492-2498 p.Article in journal (Refereed)
    Abstract [en]

    The distribution of both carbon and silicon isotopes in synthetic sublimation growth SiC wafers and in natural SiC grains was studied using secondary ion mass-spectrometry (SIMS). Significant variations in both isotopic ratios were observed which were broadly correlated with the crystalline perfection as documented by Raman microspectroscopy. Domains consisting of 15R (or with its admixture) are, on average, enriched in 12C isotope relative to 6H domains, and they also show larger scatter in their observed silicon isotope ratios. We ascribe such heterogeneity to fluctuations of Si/C ratio in the growth medium and it is possible to model the spatial extent of such fluctuations. For the natural SiC grains the isotopic data suggest that they grew under relatively stable conditions, although some of them show significant isotopic zoning.

  • 5.
    Zaman, Siama
    et al.
    Linköping University, Department of Science and Technology. Linköping University, The Institute of Technology.
    Zainelabdin, Ahmed
    Linköping University, Department of Science and Technology. Linköping University, The Institute of Technology.
    Amin, Gul
    Linköping University, Department of Science and Technology. Linköping University, The Institute of Technology.
    Nour, Omer
    Linköping University, Department of Science and Technology. Linköping University, The Institute of Technology.
    Willander, Magnus
    Linköping University, Department of Science and Technology. Linköping University, The Institute of Technology.
    Efficient catalytic effect of CuO nanostructures on the degradation of organic dyes2012In: Journal of Physics and Chemistry of Solids, ISSN 0022-3697, E-ISSN 1879-2553, Vol. 73, no 11, 1320-1325 p.Article in journal (Refereed)
    Abstract [en]

    An efficient catalytic effect of petals and flowers like CuO nanostructures (NSs) on the degradation of two organic dyes, methylene blue (MB) and rhodamine B (RB) were investigated. The highest degradation of 95% in CuO petals and 72% in flowers for MB is observed in 24 h. For RB, the degradation was 85% and 80% in petals and flowers, respectively for 5 h. It was observed that CuO petals appeared to be more active than flowers for degradation of both dyes associated to high specific surface area. The petals and flower like CuO NSs were synthesized using the chemical bath method at 90 °C. The grown CuO NSs were characterized using scanning electron microscopy (SEM), high resolution transmission electron microscopy (HRTEM), and X-ray diffraction (XRD).

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