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  • 1.
    Admassie, S.
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Biomolecular and Organic Electronics . Linköping University, The Institute of Technology.
    Inganäs, Olle
    Linköping University, Department of Physics, Chemistry and Biology, Biomolecular and Organic Electronics . Linköping University, The Institute of Technology.
    Electrochromism in diffractive conducting polymer gratings2004In: Journal of the Electrochemical Society, ISSN 0013-4651, E-ISSN 1945-7111, Vol. 151, no 6Article in journal (Refereed)
    Abstract [en]

    The electrochromic polymer poly(3,4-ethylenedioxythiophene)-poly(styrene sulfonate) (PEDOT-PSS) spin-coated on ITO/glass was patterned with a soft lithographic method in order to diffract the incident light and thereby modify absorption of light by the film to improve the electrochromic efficiency of the polymer. The absorbance peak at around 610 nm was found to be much higher in the patterned PEDOT-PSS film than the one observed in the unpatterned film. Values of coloration efficiencies varying from 107 to 174 cm2/C were obtained for three different unpatterned PEDOT-PSS films, whereas for three different patterned PEDOT-PSS films higher values ranging from 211 to 371 cm2/C were found. These increased values of the electrochromic efficiencies are attributed to diffraction. © 2004 The Electrochemical Society. All rights reserved.

  • 2.
    Baranzahi, Amir
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Applied Physics. Linköping University, The Institute of Technology.
    Tobias, Peter
    Linköping University, Department of Physics, Chemistry and Biology, Applied Physics. Linköping University, The Institute of Technology.
    Lloyd Spetz, Anita
    Linköping University, Department of Physics, Chemistry and Biology, Applied Physics. Linköping University, The Institute of Technology.
    Mårtensson, Per
    Linköping University, Department of Physics, Chemistry and Biology, Applied Physics. Linköping University, The Institute of Technology.
    Ekedahl, Lars Gunnar
    Linköping University, Department of Physics, Chemistry and Biology, Applied Physics. Linköping University, The Institute of Technology.
    Lundström, Ingemar
    Linköping University, Department of Physics, Chemistry and Biology, Applied Physics. Linköping University, The Institute of Technology.
    Chemical sensors with catalytic metal gates - Switching behavior and kinetic phase transitions1998In: Journal of the Electrochemical Society, ISSN 0013-4651, E-ISSN 1945-7111, Vol. 145, no 10, p. 3401-3406Article in journal (Refereed)
    Abstract [en]

    Rapid transitions in the response of platinum-based chemical sensors occurring at given hydrogen-oxygen concentration ratios are explained by kinetic phase transitions or switching phenomena on the catalytic metal surface. Below the transition point the response of platinum-insulator silicon carbide devices is small and above the transition it is large. It is found that the critical ratio depends on the operation temperature and the properties of the device. Three different cases are identified, namely, injection-, diffusion-, and reaction-rate-determined transitions. At sufficiently large temperatures the transition is injection limited and occurs at the stoichiometric ratio of hydrogen and oxygen in the gas mixture. The implications of the experimental observations on the applications of chemical sensors with catalytic sensing layers are discussed.

  • 3. Ghosh, S.
    et al.
    Inganäs, Olle
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Biomolecular and Organic Electronics .
    Electrochemical characterization of poly(3,4-ethylene dioxythiophene) based conducting hydrogel networks2000In: Journal of the Electrochemical Society, ISSN 0013-4651, E-ISSN 1945-7111, Vol. 147, no 5, p. 1872-1877Article in journal (Refereed)
    Abstract [en]

    Poly(3,4-ethylene dioxythiophene), a conjugated polymer, doped with excess of polystyrenesulfonate (PSS), has been assembled into a mesoscopic conducting network in the form of a hydrogel. When used as an electrode, the material shows fast electrochemical kinetics as evident from cyclic voltammetry, chronopotentiometry, and impedance measurements. Due to high ionic mobility in the material, the electrochemical process is not limited by ion diffusion in the electrode, as normally is the case for conducting polymers, but by the resistance in the electronically conducting network. This resistance is decreased by growing another conducting polymer, polypyrrole (PPy), inside the hydrogel. Homogeneous deposition of PPy is confirmed by atomic force microscopy. The composite hydrogel also shows larger capacitance, only slightly affecting the kinetics of the electrode. Since the material can be charged and discharged in a very short time, application of such electrodes in high power density supercapacitors has been envisaged.

  • 4.
    Hitova, L.
    et al.
    Inst. Semiconduct. Phys. Technol., St. Kliment Ohridski Univ. of Sofia, 1164 Sofia, Bulgaria.
    Yakimova, Rositsa
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Trifonova, E.P.
    Faculty of Physics, St. Kliment Ohridski Univ. of Sofia, 1164 Sofia, Bulgaria.
    Lenchev, A.
    Faculty of Chemistry, St. Kliment Ohridski Univ. of Sofia, 1164 Sofia, Bulgaria.
    Janzén, Erik
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Heat capacity of 4H-SiC determined by differential scanning calorimetry2000In: Journal of the Electrochemical Society, ISSN 0013-4651, E-ISSN 1945-7111, Vol. 147, no 9, p. 3546-3547Article in journal (Refereed)
    Abstract [en]

    The thermochemical properties of monocrystalline 4H-SiC was studied. Differential scanning calorimetry was used to measure the heat capacity. The powders used were nitrogen doped. The powder is synthesized from pure Si and C. The heat capacity measurements were performed using a DSC-4 Perkin Elmer device. The data obtained were analyzed statistically using the computer program. The experimental data fitted the curves. The measured data and the extrapolated data for monocrystalline 4H-SiC are lower than those of monocrystalline 6H-SiC.

  • 5.
    Jensen, J.A.D.
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Moller, P.
    Møller, P., Department of Mfg. Eng. and Mgmt., The Technical University of Denmark, Lyngby DK-2800, Denmark.
    Bruton, T.
    BP Solar, European Technology Centre, Sunbury, United Kingdom.
    Mason, N.
    BP Solar, European Technology Centre, Sunbury, United Kingdom.
    Russell, R.
    BP Solar, European Technology Centre, Sunbury, United Kingdom.
    Hadley, J.
    Enthone, s-Herrogenbosch, Netherlands.
    Verhoeven, P.
    Enthone, s-Herrogenbosch, Netherlands.
    Matthewson, A.
    The Natl. Microelectronics Res. Ctr., University College Cork, Cork, Ireland.
    Electrochemical deposition of buried contacts in high-efficiency crystalline silicon photovoltaic cells2003In: Journal of the Electrochemical Society, ISSN 0013-4651, E-ISSN 1945-7111, Vol. 150, no 1Article in journal (Refereed)
    Abstract [en]

    This article reports on a newly developed method for electrochemical deposition of buried Cu contacts in Si-based photovoltaic (PV) cells. Contact grooves, 20 µm wide by 40 µm deep, were laser-cut into Si PV cells, hereafter applied with a thin electroless NiP base and subsequently filled with Cu by electrochemical deposition at a rate of up to 10 µm per min. With the newly developed process, void-free, superconformal Cu-filling of the laser-cut grooves was observed by scanning electron microscopy and focused ion beam techniques. The Cu microstructure in grooves showed both bottom and sidewall texture, with a grain-size decreasing from the center to the edges of the buried Cu contacts and a pronounced lateral growth outside the laser-cut grooves. The measured specific contact resistances of the buried contacts was better than the production standard. Overall performance of the new PV cells was equal to the production standard with measured efficiencies up to 16.9%.

  • 6.
    Johansson, Tomas
    et al.
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
    Persson, Nils-Krister
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Biomolecular and Organic Electronics .
    Inganäs, Olle
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Biomolecular and Organic Electronics .
    Moving Redox Fronts in Conjugated Polymers Studies from Lateral Electrochemistry in Polythiophenes2004In: Journal of the Electrochemical Society, ISSN 0013-4651, E-ISSN 1945-7111, Vol. 151, no 4Article in journal (Refereed)
    Abstract [en]

    The propagation speed of the front of electrochemical conversion, from semiconductor to highly doped polymer, in films of regioregular poly(3-hexylthiophene) spin cast on insulating substrates was analyzed. Propagation of the p-doped zone in polymer electrochromic devices was imaged simultaneously with recording of electrochemical data. The current is proportional to the propagation speed and has a Tafel-like behavior when taking the resistive drop in the film into account. The resistivity in the film, which gradually lowers the propagation speed, was used for determination of the conductivity of the p-doped polymer. By combining these values with the doping charge injected into the film during front migration we estimated the hole carrier mobility for different doping levels. © 2004 The Electrochemical Society.

  • 7.
    Karlsson, L M
    et al.
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
    Tengvall, Pentti
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Applied Physics.
    Lundström, Ingemar
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Applied Physics.
    Arwin, Hans
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Applied Optics .
    Back-side etching A tool for making morphology gradients in porous silicon2002In: Journal of the Electrochemical Society, ISSN 0013-4651, E-ISSN 1945-7111, Vol. 149, no 12Article in journal (Refereed)
    Abstract [en]

    A new method for preparing morphology gradients in electrochemically etched porous silicon layers in presented. The idea is to etch on the back side of the anode and thus utilize and inhomogenous electric field to control the pore size along a surface. The etching procedure resulted in a complex gradient in pore size, porosity, and porous layer thickness, which was studied by spectroscopic ellipsometry and scanning electron microscopy. The gradients are of interest, e.g., for biomaterials research, bio-sensor applications, and for basic studies of adsorption of organic molecules, like proteins. In order to investigate the potential of the gradient surfaces for protein adsorption studies, these were exposed to human serum albumin, and a gradient in the amount of adsorbed protein was observed.

  • 8.
    Kayambaki, M.
    et al.
    Found. for Res. and Technol.-Hellas, Heraklion, Crete 71110, Greece.
    Tsagaraki, K.
    Found. for Res. and Technol.-Hellas, Heraklion, Crete 71110, Greece.
    Cimalla, V.
    Found. for Res. and Technol.-Hellas, Heraklion, Crete 71110, Greece.
    Zekentes, K.
    Found. for Res. and Technol.-Hellas, Heraklion, Crete 71110, Greece.
    Yakimova, Rositsa
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Crystal quality evaluation by electrochemical preferential etching of p-type SiC crystals2000In: Journal of the Electrochemical Society, ISSN 0013-4651, E-ISSN 1945-7111, Vol. 147, no 7, p. 2744-2748Article in journal (Refereed)
    Abstract [en]

    An electrochemical etching process is used for evaluating the types and the distribution of crystal defects on both the Si and C faces of p-type 6H and 4H-SiC. The surface morphology of the etched area is different for the two surface polarities. Dislocation-related etch-pits appeared on the etched surfaces due to a preferential etching process. The etching experiments were conducted in a commercial apparatus in combination with accurate capacitance-voltage profiling, showing that this characterization method is highly useful and simple for evaluating SiC material quality.

  • 9.
    Leone, Stefano
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Henry, Anne
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Andersson, Sven
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Kordina, Olle
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Janzén, Erik
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Optimization of a Concentrated Chloride-Based CVD Process for 4H–SiC Epilayers2010In: Journal of the Electrochemical Society, ISSN 0013-4651, E-ISSN 1945-7111, Vol. 157, no 10, p. H969-H979Article in journal (Refereed)
    Abstract [en]

    Concentrated homoepitaxial growths of 4H–SiC was performed using a chloride-based chemical vapor deposition (CVD) process on different off-angle substrates (on-axis, 4 and 8° off-axis toward the [110] direction). A suitable combination of gas flow and process pressure is needed to produce the gas speed that yields an optimum cracking of the precursors and a uniform gas distribution for deposition over large areas. The use of low pressure and the addition of chlorinated precursors bring the added benefit of achieving higher growth rates. A systematic study of the gas speed's effect on the growth rate, uniformity, and morphology on the 4H–SiC epitaxial layers was performed. Growth rates in excess of 50  µm/h were achieved on 50 mm diameter wafers with excellent thickness uniformity (below 2% /mean without rotation of the substrate) and smooth morphology using only 1/10 of the typical gas carrier flow and process pressure demonstrating the feasibility of a concentrated chloride-based CVD process for 4H–SiC. Thermodynamic calculations showed that the improved thickness uniformity could be due to a more uniform gas phase composition of the silicon intermediates. The concentration of the SiCl2 intermediate increases by a factor of 8 at a reduced carrier flow, while all the other hydrogenated silicon intermediates decrease.

  • 10.
    Lofgren, P.M.
    et al.
    ABB Corporate Research, S-721 78 Väterås, Sweden, Faxén Laboratory, Royal Institute of Technology, S-100 44 Stockholm, Sweden.
    Ji, W.
    ABB Corporate Research, S-721 78 Väterås, Sweden.
    Hallin, C.
    Gu, C.-Y.
    ABB Corporate Research, S-721 78 Väterås, Sweden.
    Modeling of silicon carbide epitaxial growth in hot-wall chemical vapor deposition processes2000In: Journal of the Electrochemical Society, ISSN 0013-4651, E-ISSN 1945-7111, Vol. 147, no 1, p. 164-175Article in journal (Refereed)
    Abstract [en]

    A complete two-dimensional axisymmetric model for chemical vapor deposition (CVD) is presented, incorporating reduction heating by a radio frequency coil, flow, heat transfer (radiation included), and gas and surface chemistry, applied to epitaxial growth of silicon carbide (SiC) with H2 as the carrier gas and C3H8 and SiH4 as precursors. Temperatures range from 1873 to 1923 K. Predictions are compared to full-scale experiments carried out in the Linkoping hot-wall CVD reactor for epitaxial growth. Temperature predictions have previously shown to agree well with experiments, consequently, this paper focuses on the reaction mechanism model. Three different reaction mechanisms are compared to experiments where mechanisms contain 35 gas, seven surface, and two bulk species including gas and surface reactions. The predicted growth rate agrees well with experiments for 300 mbar but is slightly low for 50 mbar and somewhat high for 550 mbar. By including a recent mechanism for decomposition of SiH4, morphological conditions can be predicted comparing partial pressures of Si and C2H2 to experimental data from the literature. The predicted growth rate is not influenced by this additional model. It is demonstrated that when a model for hydrogen etching of the susceptor graphite is included, correct growth limitation is predicted.

  • 11.
    Menon, C.
    et al.
    Department of Microelectronics, Royal Institute of Technology (KTH), Electrum 229, SE-164 40 Kista, Sweden.
    Lindgren, A.-C.
    Department of Microelectronics, Royal Institute of Technology (KTH), Electrum 229, SE-164 40 Kista, Sweden.
    Persson, Per
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics.
    Hultman, Lars
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics.
    Radamson, H.H.
    Department of Microelectronics, Royal Institute of Technology (KTH), Electrum 229, SE-164 40 Kista, Sweden.
    Selective epitaxy of Si1-xGex layers for complementary metal oxide semiconductor applications2003In: Journal of the Electrochemical Society, ISSN 0013-4651, E-ISSN 1945-7111, Vol. 150, no 4Article in journal (Refereed)
    Abstract [en]

    The selective growth of Si-buffer/Si1-xGex/Si-cap structures (0.14 < × < 0.33) on patterned substrates aimed for channel layer applications in a metal-oxide-semiconductor field effect transistor structure was investigated. By optimizing the growth parameters the surface roughness of these structures was reduced. Furthermore, selective epitaxy of high B- or P-doped SiGe layers for source/drain applications was also studied. Abrupt dopant profiles with a good epitaxial quality and low sheet resistance, e.g., 195 and 260 O/? for 420 Å thick, B-doped Si0.81Ge0.19 and P-doped Si0.71Ge0.29 layers, respectively, were obtained. In this study, secondary ion mass spectroscopy, high-resolution reciprocal lattice mapping, atomic force microscopy, and cross-sectional transmission electron microscopy were used as the main characterization tools.

  • 12.
    Mikhelashvili, V.
    et al.
    Technion Israel Institute Technology, Israel.
    Meyler, B.
    Technion Israel Institute Technology, Israel.
    Yofis, S.
    Technion Israel Institute Technology, Israel.
    Salzman, J.
    Technion Israel Institute Technology, Israel.
    Garbrecht, Magnus
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Cohen-Hyams, T.
    Technion Israel Institute Technology, Israel.
    Kaplan, W. D.
    Technion Israel Institute Technology, Israel.
    Eisenstein, G.
    Technion Israel Institute Technology, Israel.
    A Nonvolatile Memory Capacitor Based on a Double Gold Nanocrystal Storing Layer and High-k Dielectric Tunneling and Control Layers2010In: Journal of the Electrochemical Society, ISSN 0013-4651, E-ISSN 1945-7111, Vol. 157, no 4, p. H463-H469Article in journal (Refereed)
    Abstract [en]

    We present a metal-insulator-semiconductor nonvolatile memory capacitor based on two gold nanoparticle charge storage layers, two HfO(2) layers, and a multilayer HfNO/HfTiO stack. The device exhibits an equivalent oxide thickness of 7.3 nm, a hysteresis of 15 V at a gate voltage of +11 to -8 V, and a storage charge density of 2.75x10(13) cm(-2). A leakage of 3.6x10(-5) A/cm(2) at -10 V, a breakdown voltage of 13.3 V, and good retention properties with a hysteresis window of 10 V following more than 10 h of consecutive write/erase operations with a +/- 7 V swing were demonstrated. The capacitor characteristics are frequency-independent in the 10 kHz-1 MHz range.

  • 13.
    Poksinski, Michal
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Applied Optics . Linköping University, The Institute of Technology.
    Dzuho, Hasan
    Linköping University, Department of Physics, Chemistry and Biology, Applied Optics . Linköping University, The Institute of Technology.
    Arwin, Hans
    Linköping University, Department of Physics, Chemistry and Biology, Applied Optics . Linköping University, The Institute of Technology.
    Copper corrosion monitoring with total internal reflection ellipsometry2003In: Journal of the Electrochemical Society, ISSN 0013-4651, E-ISSN 1945-7111, Vol. 150, no 11, p. B536-B539Article in journal (Refereed)
    Abstract [en]

    A technique for in situ monitoring of changes on surfaces of semitransparent thin films is presented. This technique combines ellipsometry and total internal reflection and is called total internal reflection ellipsometry. It utilizes the high surface sensitivity of ellipsometry and can be applied to detect and quantify very small changes on thin film surfaces. One example on an application is corrosion monitoring. The main advantage in comparison to ordinary ellipsometry is that measurements are done from the “back side” of the sample and thus the probe beam does not propagate through and will not be influenced by the media reacting with the surface. An overview of total internal reflection ellipsometry and results from corrosion monitoring on thin copper films are presented.

  • 14.
    Robinson, Nathaniel D
    et al.
    Linköping University, The Institute of Technology. Linköping University, Department of Science and Technology.
    Svensson, Per-Olof
    Linköping University, The Institute of Technology. Linköping University, Department of Science and Technology.
    Nilsson, David
    Linköping University, The Institute of Technology. Linköping University, Department of Science and Technology.
    Berggren, Magnus
    Linköping University, The Institute of Technology. Linköping University, Department of Science and Technology.
    On the Current Saturation Observed in Electrochemical Polymer Transistors2006In: Journal of the Electrochemical Society, ISSN 0013-4651, E-ISSN 1945-7111, Vol. 153, p. 39-44Article in journal (Refereed)
    Abstract [en]

    Electrochemical transistors based on conjugated polymers are proposed as a path to printed electronics on paper. The electrochemical doping/dedoping of conjugated polymers clearly plays a role in the current vs potential (I-V) characteristics of these devices, however, the mechanism of current saturation (often referred to as pinch-off) is not clearly understood, and the relationship between electrochemical devices and field-effect transistors is unclear. This paper offers a semiempirical model of the steady-state behavior of electrochemical transistors and compares this model with experimental observations of potential and electrochromic measurements within a device to illustrate the science behind the functionality observed. ©2006 The Electrochemical Society

  • 15.
    Syväjärvi, Mikael
    et al.
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Yakimova, Rositsa
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Janzén, Erik
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Anisotropic etching of SiC2000In: Journal of the Electrochemical Society, ISSN 0013-4651, E-ISSN 1945-7111, Vol. 147, no 9, p. 3519-3522Article in journal (Refereed)
    Abstract [en]

    The etching effect using molten KOH of micropipes and dislocations in silicon carbide single crystals is investigated. Most of the etch pits become hexagonal due to an anisotropic etching behavior. Micropipes are interconnected with dislocations, and this observation is discussed in relation to the growth process. The hexagonal pattern of micropipes is revealed by rapid etching provided by a large undersaturation. Etching from a melt gives a disintegration of the SiC crystal at the micropipe via spiral dissolution as a consequence of etching near equilibrium conditions. The Si- and C-faces are attacked by molten KOH preferentially and isotropically, respectively. The size of the micropipes with increasing etching time is studied for both the Si- and C-faces. The temperature dependence of the etch rate follows an Arrhenius dependence with an apparent activation energy of about 12-15 kcal/mol derived from measuring the etch rate and weight loss.

  • 16.
    Zangooie, S.
    et al.
    Ctr. Microlectron. Optical Mat. Res., Department of Electrical Engineering, University of Nebraska, Lincoln, NE 68588-0511, United States.
    Arwin, Hans
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Applied Optics .
    Surface, Pore Morphology, and Optical Properties of Porous 4H-SiC2001In: Journal of the Electrochemical Society, ISSN 0013-4651, E-ISSN 1945-7111, Vol. 148, no 6Article in journal (Refereed)
    Abstract [en]

    Electron microscopy and spectroscopic ellipsometry are used to investigate the microstructural and optical properties of porous SiC. It is discussed that lc dislocations are likely to play a role in the initial phases of the anodization process in terms of formation of nanometer sized holes. Pores are found to initially propagate nearly parallel with the sample surface and gradually change direction toward the c axis. Pore sizes are found to increase with depth toward the interface between the porous SiC and the substrate. A different pore morphology is found along the internal surfaces of micropipes, where structures are relatively large in size and appear spherical in shape. The anisotropy in pore propagation influences the etch rate, which varies in a nonlinear manner with the anodization time. The etching rate is also influenced by the larger absorptivity of the porous layers caused by formation of a disordered phase at the interface between the crystalline SiC and the pores. Ellipsometric analysis of porous SiC layers yields thicknesses and porosities in good agreement with the electron microscopy observations. Optical properties of the solid content of the porous layers are significantly different from those of hulk crystalline SiC, and depend on the etching time and sample thickness. © 2001 The Electrochemical Society. [DOI: 10.1149/1.1368109] All rights reserved.

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