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  • 1.
    Alami, Jones
    Linköping University, Department of Physics, Measurement Technology, Biology and Chemistry. Linköping University, The Institute of Technology.
    Plasma characterisation in high power pulsed magnetron sputtering2003Licentiate thesis, comprehensive summary (Other academic)
    Abstract [en]

    In this thesis, plasma parameters including plasma and floating potentials, electron energy distribution function (EEDF) plasma density and electron temperature are studied in a high power pulsed magnetron (HPPM) discharge at different Argon (Ar) gas pressures and different magnetron powers. It is reported that the EEDF during and shortly after the pulse can be represented by a bi-Maxwellian distribution indicating two energy groups of electrons.

    Furthermore, we report on the variation of the plasma parameters and electron energy distribution function with gas pressure in the pressure range 0.5-20 mtorr. At a high pressure (> 10 mTorr) two density peaks are present, the second of which occurs hundreds of microseconds after the pulse is switched off. It shows that the second peaks occurrence depends on the target material used as well as the chamber pressure and the magnetron power. It is found that the electron density is very high (up to 1019 m-3, during the whole of the measured 2000 µs, indicating the importance of the second density peak in maintaining the high plasma density.

    Measurements on the electron temperature show that this does not exceed 3 eV while the pulse is on, and that it is no more than 0.5 after the pulse is off. A movie is constructed using Langmuir probe measurements data, showing the temporal evolution of the plasma at 20 mTorr argon pressure and 11 J pulse energy. Analysis shows the existence of a magnetic trap underneath the center of the target. Furthermore, the electron flux in the substrate vicinity 10 - 12 cm from the target is found to be homogeneous. Ti thin films are grown along the sidewalls of a hole, 1 cm2 in area and 2 cm in depth, using both de magnetron and HPPM sputtering. Secondary electron microscopy shows that the film grown by de magnetron sputtering shows clear columnar growth, while a dense and flat film was produced using the HPPM sputtering technique.

  • 2.
    Alami, Jones
    Linköping University, Department of Physics, Chemistry and Biology, Plasma and Coating Physics . Linköping University, The Institute of Technology.
    Plasma Characterization & Thin Film Growth and Analysis in Highly Ionized Magnetron Sputtering2005Doctoral thesis, comprehensive summary (Other academic)
    Abstract [en]

    The present thesis addresses two research areas related to film growth in a highly ionized magnetron sputtering system: plasma characterization, and thin film growth and analysis. The deposition technique used is called high power pulsed magnetron sputtering (HPPMS). Characteristic for this technique are high energy pulses (a few Joules) of length 50-100 µs that are applied to the target (cathode) with a duty time of less than 1 % of the total pulse time. This results in a high electron density in the discharge (>1x1019 m-3) and leads to an increase of the ionization fraction of the sputtered material reaching up to 70 % for Cu.

    In this work the spatial and temporal evolution of the plasma parameters, including the electron energy distribution function (EEDF), the electron density and the electron temperature are determined using electrostatic Langmuir probes. Electron temperature measurements reveal a low effective temperature of 2-3 eV. The degree of ionization in the HPPMS discharge is explained in light of the self-sputtering yield of the target material. A simple model is therefore provided in order to compare the sputtering yield in HPPMS and that in dc magnetron sputtering (dcMS) for the same average power.

    Thin Ta films are grown using HPPMS and dcMS and their properties are studied. It is shown that enhanced microstructure and morphology of the deposited films is achieved by HPPMS. The Ta films are also deposited at a number of substrate inclination angles ranging from 0o (i.e., facing the target surface) up to 180 o (i.e., facing away from the target). Deposition rate measurements performed at all inclination angles for both techniques, reveal that growth made using HPPMS resulted in an improved film thickness at higher inclination. Furthermore, the high ionization of the Ta atoms in HPPMS discharge is found to allow for phase tailoring of the deposited films at all inclination angles by applying a bias voltage to the substrate. Finally, highly ionized magnetron sputtering of a compound MAX-phase material (Ti3SiC2) is performed, demonstrating that the HPPMS discharge could also be used to tailor the composition of the growing Ti-Si-C films.

    List of papers
    1. Evolution of the electron energy distribution and plasma parameters in a pulsed magnetron discharge
    Open this publication in new window or tab >>Evolution of the electron energy distribution and plasma parameters in a pulsed magnetron discharge
    2001 (English)In: Applied Physics Letters, ISSN 0003-6951, Vol. 78, no 22, p. 3427-Article in journal (Refereed) Published
    Abstract [en]

    We demonstrate the creation of high-density plasma in a pulsed magnetron discharge. A 2.4 MW pulse, 100 µs wide, with a repetition frequency of 50 Hz is applied to a planar magnetron discharge to study the temporal behavior of the plasma parameters: the electron energy distribution function, the electron density, and the average electron energy. The electron density in the vicinity of the substrate, 20 cm below the cathode target, peaks at 8×1017 m–3, 127 µs after initiating the pulse. Towards the end of the pulse two energy groups of electrons are present with a corresponding peak in average electron energy. With the disapperance of the high-energy electron group, the electron density peaks, and the electron energy distribution appears to be Maxwellian like. Following the electron density peak, the plasma becomes more Druyvesteyn like with a higher average electron energy.

    Keywords
    sputter deposition
    National Category
    Natural Sciences
    Identifiers
    urn:nbn:se:liu:diva-13372 (URN)10.1063/1.1376150 (DOI)
    Available from: 2005-10-25 Created: 2005-10-25 Last updated: 2013-10-30
    2. Spatial and temporal behavior of the plasma parameters in a pulsed magnetron discharge
    Open this publication in new window or tab >>Spatial and temporal behavior of the plasma parameters in a pulsed magnetron discharge
    2002 (English)In: Surface and Coatings Technology, Vol. 161, no 2-3, p. 249-256Article in journal (Refereed) Published
    Abstract [en]

    We demonstrate the evolution of the electron, energy distribution and the plasma parameters in a high-density plasma in a pulsed magnetron discharge. The high-density plasma is created by applying a high power pulse (1–2.4 MW) with pulse length 100 μs and repetition frequency of 50 Hz to a planar magnetron discharge. The spatial and temporal behavior of the plasma parameters are investigated using a Langmuir probe; the electron energy distribution function, the electron density and the average electron energy. The electron energy distribution function during and shortly after the pulse can be represented by a bi-Maxwellian distribution indicating two energy groups of electrons. Furthermore, we report on the variation of the plasma parameters and electron energy distribution function with gas pressure in the pressure range 0.5–20 mtorr. We report electron density as high as 4×1018 m−3 at 10 mtorr and 9 cm below the target in a pulsed discharge with average power 300 W. We estimate the traveling speed of the electron density peak along the axis of the discharge. The traveling speed decreases with increased gas pressure from 4×105 cm/s at 0.5 mtorr to 0.87×105 cm s−1 at 10 mtorr. The effective electron temperature peaks at the same time independent of position in the discharge, which indicates a burst of high energy electrons at the end of the pulse.

    Keywords
    Pulsed magnetron sputtering, Time evolution, Ionized sputtering, High density plasma, Ionized metal plasma
    National Category
    Natural Sciences
    Identifiers
    urn:nbn:se:liu:diva-13373 (URN)10.1016/S0257-8972(02)00518-2 (DOI)
    Available from: 2005-10-25 Created: 2005-10-25 Last updated: 2013-10-30
    3. Plasma dynamics in a highly ionized pulsed magnetron discharge
    Open this publication in new window or tab >>Plasma dynamics in a highly ionized pulsed magnetron discharge
    Show others...
    2005 (English)In: Plasma sources science & technology (Print), ISSN 0963-0252, E-ISSN 1361-6595, Vol. 14, no 3, p. 525-531Article in journal (Refereed) Published
    Abstract [en]

    We report on electrostatic probe measurements of a high-power pulsed magnetron discharge. Space- and time-dependent characteristics of the plasma parameters are obtained as functions of the process parameters. By applying high-power pulses (peak power of ~0.5 MW), with a pulse-on time of ~100 µs and a repetition frequency of 20 ms, peak electron densities of the order of ~1019 m− 3, i.e. three orders of magnitude higher than for a conventional dc magnetron discharge, are achieved soon after the pulse is switched on. At high sputtering gas pressures (>5 mTorr), a second peak occurs in the electron density curve, hundreds of microseconds after the pulse is switched off. This second peak is mainly due to an ion acoustic wave in the plasma, reflecting off the chamber walls. This is concluded from the time delay between the two peaks in the electron and ion saturation currents, which is shown to be dependent on the chamber dimensions and the sputtering gas composition. Finally, the electron temperature is determined, initially very high but decreasing rapidly as the pulse is turned off. The reduction seen in the electron temperature, close to the etched area of the cathode, is due to cooling by the sputtered metal atoms.

    National Category
    Engineering and Technology
    Identifiers
    urn:nbn:se:liu:diva-13374 (URN)10.1088/0963-0252/14/3/015 (DOI)
    Available from: 2005-10-25 Created: 2005-10-25 Last updated: 2017-12-13
    4. Ion-accoustic solitary waves in a high power pulsed magnetron sputtering discharge
    Open this publication in new window or tab >>Ion-accoustic solitary waves in a high power pulsed magnetron sputtering discharge
    2005 (English)In: Journal of Physics D: Applied Physics, ISSN 0022-3727, E-ISSN 1361-6463, Vol. 38, no 18, p. 3417-3421Article in journal (Refereed) Published
    Abstract [en]

    We report on the creation and propagation of ion-acoustic solitary waves in a high power pulsed magnetron sputtering discharge. A dense localized plasma is created by applying high energy pulses (4–12 J) of length 70 µs, at a repetition frequency of 50 pulses per second, to a planar magnetron sputtering source. The temporal behaviour of the electron density, measured by a Langmuir probe, shows solitary waves travelling away from the magnetron target. The velocity of the waves depends on the gas pressure but is roughly independent of the pulse energy.

    National Category
    Engineering and Technology
    Identifiers
    urn:nbn:se:liu:diva-13375 (URN)10.1088/0022-3727/38/18/015 (DOI)
    Available from: 2005-10-25 Created: 2005-10-25 Last updated: 2017-12-13
    5. Ion-assisted Physical Vapor Deposition for enhanced film properties on non-flat surfaces
    Open this publication in new window or tab >>Ion-assisted Physical Vapor Deposition for enhanced film properties on non-flat surfaces
    Show others...
    2005 (English)In: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, ISSN 0734-2101, E-ISSN 1520-8559, Vol. 23, no 2, p. 278-280Article in journal (Refereed) Published
    Abstract [en]

    We have synthesized Ta thin films on Si substrates placed along a wall of a 2-cm-deep and 1-cm-wide trench, using both a mostly neutral Ta flux by conventional dc magnetron sputtering (dcMS) and a mostly ionized Ta flux by high-power pulsed magnetron sputtering (HPPMS). Structure of the grown films was evaluated by scanning electron microscopy, transmission electron microscopy, and atomic force microscopy. The Ta thin film grown by HPPMS has a smooth surface and a dense crystalline structure with grains oriented perpendicular to the substrate surface, whereas the film grown by dcMS exhibits a rough surface, pores between the grains, and an inclined columnar structure. The improved homogeneity achieved by HPPMS is a direct consequence of the high ion fraction of sputtered species.

    Keywords
    tantalum, ion beam assisted deposition, sputter deposition, scanning electron microscopy, transmission electron microscopy, atomic force microscopy, surface structure, surface roughness, porosity, metallic thin films
    National Category
    Natural Sciences
    Identifiers
    urn:nbn:se:liu:diva-13376 (URN)10.1116/1.1861049 (DOI)
    Available from: 2005-10-25 Created: 2005-10-25 Last updated: 2017-12-13
    6. Phase tailoring of Ta thin films by highly ionized pulsed magnetron sputtering
    Open this publication in new window or tab >>Phase tailoring of Ta thin films by highly ionized pulsed magnetron sputtering
    Show others...
    2007 (English)In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 515, no 7-8, p. 3434-3438Article in journal (Refereed) Published
    Abstract [en]

    Ta thin films were grown on Si substrates at different inclination angles with respect to the sputter source using high power impulse magnetron sputtering (HIPIMS), an ionized physical vapor deposition technique. The ionization allowed for better control of the energy and directionality of the sputtered species, and consequently for improved properties of the deposited films. Depositions were made on Si substrates with the native oxide intact. The structure of the as deposited films was investigated using X-ray diffraction, while a four-point probe setup was used to measure the resistivity. A substrate bias process-window for growth of bcc-Ta was observed. However, the process-window position changed with changing inclination angles of the substrate. The formation of this low-resistivity bcc-phase could be understood in light of the high ion flux from the HIPIMS discharge.

    Place, publisher, year, edition, pages
    Elsevier, 2007
    Keywords
    HPPMS, Ionized PVD, IPVD, Pulsed sputtering
    National Category
    Physical Sciences
    Identifiers
    urn:nbn:se:liu:diva-10442 (URN)10.1016/j.tsf.2006.10.013 (DOI)
    Note
    Original publication: J. Alamia, P. Eklunda, J.M. Anderssona, M. Lattemanna, E. Wallina, J. Bohlmarka, P. Perssona, and U. Helmersson, Phase tailoring of Ta thin films by highly ionized pulsed magnetron sputtering, 2007, Thin Solid Films, (515), 7-8, 3434-3438. http://dx.doi.org/10.1016/j.tsf.2006.10.013. Copyright: Elsevier B.V., http://www.elsevier.com/Available from: 2007-12-14 Created: 2007-12-14 Last updated: 2017-12-14Bibliographically approved
    7. High-power impulse magnetron sputtering of Ti-Si-C thin films from a Ti3SiC2 compound target
    Open this publication in new window or tab >>High-power impulse magnetron sputtering of Ti-Si-C thin films from a Ti3SiC2 compound target
    Show others...
    2006 (English)In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 515, no 4, p. 1731-1736Article in journal (Refereed) Published
    Abstract [en]

    We have deposited Ti-Si-C thin films using high-power impulse magnetron sputtering (HIPIMS) from a Ti3SiC2 compound target. The as-deposited films were composite materials with TiC as the main crystalline constituent. X-ray diffraction and photoelectron spectroscopy indicated that they also contained amorphous SiC, and for films deposited on inclined substrates, crystalline Ti5Si3Cx. The film morphology was dense and flat, while films deposited with dc magnetron sputtering under comparable conditions were rough and porous. Due to the high degree of ionization of the sputtered species obtained in HIPIMS, it is possible to control the film composition, in particular the C content, by tuning the substrate inclination angle, the Ar process pressure, and the bias voltage.

    Place, publisher, year, edition, pages
    Institutionen för fysik, kemi och biologi, 2006
    Keywords
    HIPIMS, Titanium silicon carbide
    National Category
    Physical Sciences
    Identifiers
    urn:nbn:se:liu:diva-10437 (URN)10.1016/j.tsf.2006.06.015 (DOI)000242931900079 ()
    Note

    Original publication: J. Alami, P. Eklund, J. Emmerlich, O. Wilhelmsson, U. Jansson, H. Högberg, L. Hultman, & U. Helmersson, High-power impulse magnetron sputtering of Ti-Si-C thin films from a Ti3SiC2 compound target, 2006, Thin Solid Films, (515), 4, 1731-1736. http://dx.doi.org/10.1016/j.tsf.2006.06.015. Copyright: Elsevier B.V., http://www.elsevier.com/.

    Available from: 2007-12-14 Created: 2007-12-14 Last updated: 2017-12-14Bibliographically approved
  • 3.
    Alami, Jones
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Plasma and Coating Physics . Linköping University, The Institute of Technology.
    Eklund, Per
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Andersson, Jon M.
    Linköping University, Department of Physics, Chemistry and Biology, Plasma and Coating Physics . Linköping University, The Institute of Technology.
    Lattemann, Martina
    Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
    Wallin, Erik
    Linköping University, Department of Physics, Chemistry and Biology, Plasma and Coating Physics . Linköping University, The Institute of Technology.
    Böhlmark, Johan
    Linköping University, Department of Physics, Chemistry and Biology, Plasma and Coating Physics . Linköping University, The Institute of Technology.
    Persson, Per
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Helmersson, Ulf
    Linköping University, Department of Physics, Chemistry and Biology, Plasma and Coating Physics . Linköping University, The Institute of Technology.
    Phase tailoring of Ta thin films by highly ionized pulsed magnetron sputtering2007In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 515, no 7-8, p. 3434-3438Article in journal (Refereed)
    Abstract [en]

    Ta thin films were grown on Si substrates at different inclination angles with respect to the sputter source using high power impulse magnetron sputtering (HIPIMS), an ionized physical vapor deposition technique. The ionization allowed for better control of the energy and directionality of the sputtered species, and consequently for improved properties of the deposited films. Depositions were made on Si substrates with the native oxide intact. The structure of the as deposited films was investigated using X-ray diffraction, while a four-point probe setup was used to measure the resistivity. A substrate bias process-window for growth of bcc-Ta was observed. However, the process-window position changed with changing inclination angles of the substrate. The formation of this low-resistivity bcc-phase could be understood in light of the high ion flux from the HIPIMS discharge.

  • 4.
    Alami, Jones
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Plasma and Coating Physics. Linköping University, The Institute of Technology.
    Eklund, Per
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Emmerlich, Jens
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Wilhelmsson, O.
    Department of Materials Chemistry, The Ångström Laboratory, Uppsala University, Uppsala, Sweden.
    Jansson, U.
    Department of Materials Chemistry, The Ångström Laboratory, Uppsala University, Uppsala, Sweden.
    Högberg, Hans
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Helmersson, Ulf
    Linköping University, Department of Physics, Chemistry and Biology, Plasma and Coating Physics. Linköping University, The Institute of Technology.
    High-power impulse magnetron sputtering of Ti-Si-C thin films from a Ti3SiC2 compound target2006In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 515, no 4, p. 1731-1736Article in journal (Refereed)
    Abstract [en]

    We have deposited Ti-Si-C thin films using high-power impulse magnetron sputtering (HIPIMS) from a Ti3SiC2 compound target. The as-deposited films were composite materials with TiC as the main crystalline constituent. X-ray diffraction and photoelectron spectroscopy indicated that they also contained amorphous SiC, and for films deposited on inclined substrates, crystalline Ti5Si3Cx. The film morphology was dense and flat, while films deposited with dc magnetron sputtering under comparable conditions were rough and porous. Due to the high degree of ionization of the sputtered species obtained in HIPIMS, it is possible to control the film composition, in particular the C content, by tuning the substrate inclination angle, the Ar process pressure, and the bias voltage.

  • 5.
    Alami, Jones
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Plasma and Coating Physics . Linköping University, The Institute of Technology.
    Gudmundsson, J. T.
    University of Iceland, Reykjavik.
    Böhlmark, Johan
    Linköping University, Department of Physics, Chemistry and Biology, Plasma and Coating Physics . Linköping University, The Institute of Technology.
    Birch, Jens
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Helmersson, Ulf
    Linköping University, Department of Physics, Chemistry and Biology, Plasma and Coating Physics . Linköping University, The Institute of Technology.
    Plasma dynamics in a highly ionized pulsed magnetron discharge2005In: Plasma sources science & technology (Print), ISSN 0963-0252, E-ISSN 1361-6595, Vol. 14, no 3, p. 525-531Article in journal (Refereed)
    Abstract [en]

    We report on electrostatic probe measurements of a high-power pulsed magnetron discharge. Space- and time-dependent characteristics of the plasma parameters are obtained as functions of the process parameters. By applying high-power pulses (peak power of ~0.5 MW), with a pulse-on time of ~100 µs and a repetition frequency of 20 ms, peak electron densities of the order of ~1019 m− 3, i.e. three orders of magnitude higher than for a conventional dc magnetron discharge, are achieved soon after the pulse is switched on. At high sputtering gas pressures (>5 mTorr), a second peak occurs in the electron density curve, hundreds of microseconds after the pulse is switched off. This second peak is mainly due to an ion acoustic wave in the plasma, reflecting off the chamber walls. This is concluded from the time delay between the two peaks in the electron and ion saturation currents, which is shown to be dependent on the chamber dimensions and the sputtering gas composition. Finally, the electron temperature is determined, initially very high but decreasing rapidly as the pulse is turned off. The reduction seen in the electron temperature, close to the etched area of the cathode, is due to cooling by the sputtered metal atoms.

  • 6.
    Alami, Jones
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Plasma and Coating Physics . Linköping University, The Institute of Technology.
    Persson, Per O. Å.
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Music, Denis
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Gudmundsson, J. T.
    University of Iceland, Reykjavik.
    Böhlmark, Johan
    Linköping University, Department of Physics, Chemistry and Biology, Plasma and Coating Physics . Linköping University, The Institute of Technology.
    Helmersson, Ulf
    Linköping University, Department of Physics, Chemistry and Biology, Plasma and Coating Physics . Linköping University, The Institute of Technology.
    Ion-assisted Physical Vapor Deposition for enhanced film properties on non-flat surfaces2005In: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, ISSN 0734-2101, E-ISSN 1520-8559, Vol. 23, no 2, p. 278-280Article in journal (Refereed)
    Abstract [en]

    We have synthesized Ta thin films on Si substrates placed along a wall of a 2-cm-deep and 1-cm-wide trench, using both a mostly neutral Ta flux by conventional dc magnetron sputtering (dcMS) and a mostly ionized Ta flux by high-power pulsed magnetron sputtering (HPPMS). Structure of the grown films was evaluated by scanning electron microscopy, transmission electron microscopy, and atomic force microscopy. The Ta thin film grown by HPPMS has a smooth surface and a dense crystalline structure with grains oriented perpendicular to the substrate surface, whereas the film grown by dcMS exhibits a rough surface, pores between the grains, and an inclined columnar structure. The improved homogeneity achieved by HPPMS is a direct consequence of the high ion fraction of sputtered species.

  • 7.
    Böhlmark, Johan
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Plasma and Coating Physics . Linköping University, The Institute of Technology.
    Alami, Jones
    Linköping University, Department of Physics, Chemistry and Biology, Plasma and Coating Physics . Linköping University, The Institute of Technology.
    Christou, Chris
    Diamond Light Source, Rutherford Appleton Laboratory, Chilton, United Kingdom.
    Ehiasarian, Arutiun P.
    Materials Research Institute, Sheffield Hallam University, United Kingdom.
    Helmersson, Ulf
    Linköping University, Department of Physics, Chemistry and Biology, Plasma and Coating Physics . Linköping University, The Institute of Technology.
    Ionization of sputtered metals in high power pulsed magnetron sputtering2005In: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, ISSN 0734-2101, E-ISSN 1520-8559, Vol. 23, no 1, p. 18-22Article in journal (Refereed)
    Abstract [en]

    The ion to neutral ratio of the sputtered material have been studied for high power pulsed magnetron sputtering and compared with a continuous direct current (dc) discharge using the same experimental setup except for the power source. Optical emission spectroscopy (OES) was used to study the optical emission from the plasma through a side window. The emission was shown to be dominated by emission from metal ions. The distribution of metal ionized states clearly differed from the distribution of excited states, and we suggest the presence of a hot dense plasma surrounded by a cooler plasma. Sputtered material was ionized close to the target and transported into a cooler plasma region where the emission was also recorded. Assuming a Maxwell–Boltzmann distribution of excited states the emission from the plasma was quantified. This showed that the ionic contribution to the recorded spectrum was over 90% for high pulse powers. Even at relatively low applied pulse powers, the recorded spectra were dominated by emission from ions. OES analysis of the discharge in a continuous dc magnetron discharge was also made, which demonstrated much lower ionization.

  • 8.
    Böhlmark, Johan
    et al.
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Plasma and Coating Physics .
    Ehiasarian, A.P.
    Sheffield Hallam University.
    Lattemann, Martina
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Plasma and Coating Physics .
    Alami, Jones
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Plasma and Coating Physics .
    Helmersson, Ulf
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Plasma and Coating Physics .
    The Ion Energy Distributions in a High Power Impulse Magnetron Plasma2005In: 48th Annual Technical Conference of the Society of Vacuum Coaters,2005, 2005, p. 470-473Conference paper (Other academic)
  • 9.
    Böhlmark, Johan
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Plasma and Coating Physics . Linköping University, The Institute of Technology.
    Gudmundsson, J. T.
    Alami, Jones
    Linköping University, Department of Physics, Chemistry and Biology, Plasma and Coating Physics . Linköping University, The Institute of Technology.
    Lattemann, Martina
    Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
    Helmersson, Ulf
    Linköping University, Department of Physics, Chemistry and Biology, Plasma and Coating Physics . Linköping University, The Institute of Technology.
    Spatial electron density distribution in a high-power pulsed magnetron discharge2005In: IEEE Transactions on Plasma Science, ISSN 0093-3813, E-ISSN 1939-9375, Vol. 33, no 2, p. 346-347Article in journal (Refereed)
    Abstract [en]

    The spatial electron density distribution was measured as function of time in a high-power pulsed magnetron discharge. A Langmuir probe was positioned in various positions below the target and the electron density was mapped out. We recorded peak electron densities exceeding 1019 m-3 in a close vicinity of the target. The dynamics of the discharge showed a dense plasma expanding from the "race-track" axially into the vacuum chamber. We also record electrons trapped in a magnetic bottle where the magnetron magnetic field is zero, formed due to the unbalanced magnetron.

  • 10.
    Böhlmark, Johan
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Plasma and Coating Physics . Linköping University, The Institute of Technology.
    Helmersson, Ulf
    Linköping University, Department of Physics, Chemistry and Biology, Plasma and Coating Physics . Linköping University, The Institute of Technology.
    VanZeeland, Michael
    Large Plasma Device (LAPD), University of California Los Angeles, USA.
    Axnäs, I.
    Division of Plasma Physics, Alfvén Laboratory, Royal Institute of Technology, Stockholm, Sweden.
    Alami, Jones
    Linköping University, Department of Physics, Chemistry and Biology, Plasma and Coating Physics . Linköping University, The Institute of Technology.
    Brenning, Nils
    Division of Plasma Physics, Alfvén Laboratory, Royal Institute of Technology, Stockholm, Sweden.
    Measurement of the magnetic field change in a pulsed high current magnetron discharge2004In: Plasma Sources Science and Technology, ISSN 0963-0252, Vol. 13, no 4, p. 654-661Article in journal (Refereed)
    Abstract [en]

    In this paper we present a study of how the magnetic field of a circular planar magnetron is affected when it is exposed to a pulsed high current discharge. Spatially resolved magnetic field measurements are presented and the magnetic disturbance is quantified for different process parameters. The magnetic field is severely deformed by the discharge and we record changes of several millitesla, depending on the spatial location of the measurement. The shape of the deformation reveals the presence of azimuthally drifting electrons close to the target surface. Time resolved measurements show a transition between two types of magnetic perturbations. There is an early stage that is in phase with the axial discharge current and a late stage that is not in phase with the discharge current. The later part of the magnetic field deformation is seen as a travelling magnetic wave. We explain the magnetic perturbations by a combination of E × B drifting electrons and currents driven by plasma pressure gradients and the shape of the magnetic field. A plasma pressure wave is also recorded by a single tip Langmuir probe and the velocity (~103 m s−1) of the expanding plasma agrees well with the observed velocity of the magnetic wave. We note that the axial (discharge) current density is much too high compared to the azimuthal current density to be explained by classical collision terms, and an anomalous charge transport mechanism is required.

  • 11.
    Gudmundsson, J. T.
    et al.
    Science Institute, University of Iceland, Reykjavík, Iceland.
    Alami, Jones
    Linköping University, Department of Physics, Chemistry and Biology, Plasma and Coating Physics . Linköping University, The Institute of Technology.
    Helmersson, Ulf
    Linköping University, Department of Physics, Chemistry and Biology, Plasma and Coating Physics . Linköping University, The Institute of Technology.
    Evolution of the electron energy distribution and plasma parameters in a pulsed magnetron discharge2001In: Applied Physics Letters, ISSN 0003-6951, Vol. 78, no 22, p. 3427-Article in journal (Refereed)
    Abstract [en]

    We demonstrate the creation of high-density plasma in a pulsed magnetron discharge. A 2.4 MW pulse, 100 µs wide, with a repetition frequency of 50 Hz is applied to a planar magnetron discharge to study the temporal behavior of the plasma parameters: the electron energy distribution function, the electron density, and the average electron energy. The electron density in the vicinity of the substrate, 20 cm below the cathode target, peaks at 8×1017 m–3, 127 µs after initiating the pulse. Towards the end of the pulse two energy groups of electrons are present with a corresponding peak in average electron energy. With the disapperance of the high-energy electron group, the electron density peaks, and the electron energy distribution appears to be Maxwellian like. Following the electron density peak, the plasma becomes more Druyvesteyn like with a higher average electron energy.

  • 12.
    Gudmundsson, J. T.
    et al.
    Department of Electrical Engineering and Science Institute, University of Iceland, Reykjavík, Iceland.
    Alami, Jones
    Linköping University, Department of Physics, Chemistry and Biology, Plasma and Coating Physics . Linköping University, The Institute of Technology.
    Helmersson, Ulf
    Linköping University, Department of Physics, Chemistry and Biology, Plasma and Coating Physics . Linköping University, The Institute of Technology.
    Spatial and temporal behavior of the plasma parameters in a pulsed magnetron discharge2002In: Surface and Coatings Technology, Vol. 161, no 2-3, p. 249-256Article in journal (Refereed)
    Abstract [en]

    We demonstrate the evolution of the electron, energy distribution and the plasma parameters in a high-density plasma in a pulsed magnetron discharge. The high-density plasma is created by applying a high power pulse (1–2.4 MW) with pulse length 100 μs and repetition frequency of 50 Hz to a planar magnetron discharge. The spatial and temporal behavior of the plasma parameters are investigated using a Langmuir probe; the electron energy distribution function, the electron density and the average electron energy. The electron energy distribution function during and shortly after the pulse can be represented by a bi-Maxwellian distribution indicating two energy groups of electrons. Furthermore, we report on the variation of the plasma parameters and electron energy distribution function with gas pressure in the pressure range 0.5–20 mtorr. We report electron density as high as 4×1018 m−3 at 10 mtorr and 9 cm below the target in a pulsed discharge with average power 300 W. We estimate the traveling speed of the electron density peak along the axis of the discharge. The traveling speed decreases with increased gas pressure from 4×105 cm/s at 0.5 mtorr to 0.87×105 cm s−1 at 10 mtorr. The effective electron temperature peaks at the same time independent of position in the discharge, which indicates a burst of high energy electrons at the end of the pulse.

  • 13.
    Gylfason, K. B.
    et al.
    Science Institute, University of Iceland, Reykjavik, Iceland.
    Alami, Jones
    Linköping University, Department of Physics, Chemistry and Biology, Plasma and Coating Physics . Linköping University, The Institute of Technology.
    Helmersson, Ulf
    Linköping University, Department of Physics, Chemistry and Biology, Plasma and Coating Physics . Linköping University, The Institute of Technology.
    Gudmundsson, J. T.
    Science Institute, University of Iceland, Reykjavik, Iceland.
    Ion-accoustic solitary waves in a high power pulsed magnetron sputtering discharge2005In: Journal of Physics D: Applied Physics, ISSN 0022-3727, E-ISSN 1361-6463, Vol. 38, no 18, p. 3417-3421Article in journal (Refereed)
    Abstract [en]

    We report on the creation and propagation of ion-acoustic solitary waves in a high power pulsed magnetron sputtering discharge. A dense localized plasma is created by applying high energy pulses (4–12 J) of length 70 µs, at a repetition frequency of 50 pulses per second, to a planar magnetron sputtering source. The temporal behaviour of the electron density, measured by a Langmuir probe, shows solitary waves travelling away from the magnetron target. The velocity of the waves depends on the gas pressure but is roughly independent of the pulse energy.

  • 14.
    Helmersson, Ulf
    et al.
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Plasma and Coating Physics .
    Lattemann, Martina
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Plasma and Coating Physics .
    Alami, Jones
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Plasma and Coating Physics .
    Böhlmark, Johan
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Plasma and Coating Physics .
    Ehiasarian, A.P.
    Sheffield Hallam University.
    Gudmundsson, J.T.
    University of Iceland.
    High Power Impulse Magnetron Sputtering Discharges and Thin Film Growth: A Brief Review2005In: 48th Annual Technical Conference of the Society of Vacuum Coaters,2005, 2005, p. 458-464Conference paper (Other academic)
  • 15.
    Helmersson, Ulf
    et al.
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Plasma and Coating Physics .
    Lattemann, Martina
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Plasma and Coating Physics .
    Alami, Jones
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Plasma and Coating Physics .
    Böhlmark, Johan
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Plasma and Coating Physics .
    Ehiasarian, A.P.
    Sheffield Hallam University.
    Gudmundsson, J.T.
    University of Iceland.
    Highly Ionized Sputter Discharges for Thin Film Fabrication2006In: Bulletin of the Russian Academy of Sciences. Physics, ISSN 1062-8738, Vol. 70, no 8, p. 1421-1424Article in journal (Refereed)
  • 16.
    Jin, P.
    et al.
    National Institute of AIST, 2266-98 Anagahora, Shimoshidami, Nagoya, 463-8560, Japan.
    Xu, G.
    National Institute of AIST, 2266-98 Anagahora, Shimoshidami, Nagoya, 463-8560, Japan.
    Tazawa, M.
    National Institute of AIST, 2266-98 Anagahora, Shimoshidami, Nagoya, 463-8560, Japan.
    Yoshimura, K.
    National Institute of AIST, 2266-98 Anagahora, Shimoshidami, Nagoya, 463-8560, Japan.
    Music, Denis
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics.
    Alami, Jones
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Plasma and Coating Physics .
    Helmersson, Ulf
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Plasma and Coating Physics .
    Low temperature deposition of a-Al2O3 thin films by sputtering using a Cr2O3 template2002In: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, ISSN 0734-2101, E-ISSN 1520-8559, Vol. 20, no 6, p. 2134-2136Article in journal (Refereed)
    Abstract [en]

    A description about low temperature deposition of a-Al2O3 thin films by sputtering was presented. Cr2O3 thin layer was used as a template. Nanoindentation was used to study the mechanical properties of the deposited films. Calculations were made to obtain the hardness and Young's modulus of the films.

  • 17.
    Ni, Wei-Xin
    et al.
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Surface and Semiconductor Physics .
    Lyutovich, K.
    Institut fuer Halbleitertechnik, Universität Stuttgart, 70569 Stuttgart, Germany.
    Alami, Jones
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Plasma and Coating Physics .
    Tengstedt, Carl
    Linköping University, The Institute of Technology. Linköping University, Department of Science and Technology.
    Bauer, M.
    Institut fuer Halbleitertechnik, Universität Stuttgart, 70569 Stuttgart, Germany.
    Kasper, E.
    Institut fuer Halbleitertechnik, Universität Stuttgart, 70569 Stuttgart, Germany.
    X-ray reciprocal space mapping studies of strain relaxation in thin SiGe layers (=100 nm) using a low temperature growth step2001In: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 227-228, p. 756-760Conference paper (Other academic)
    Abstract [en]

    Relaxation of thin SiGe layers (~90 nm) grown by molecular beam epitaxy using a low temperature growth step (120-200°C) has been investigated using two-dimensional reciprocal space mapping of X-ray diffraction. The samples studied have been divided in two groups, depending on the substrate cooling process during the growth of the low temperature layer. It has been found that a higher degree of relaxation was easily achieved for the sample group without growth interruption. A process window for full relaxation of the Si0.74Ge0.26 layer has been observed in the range of 140-150°C. © 2001 Elsevier Science B.V.

1 - 17 of 17
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