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  • 1.
    Crispin, Xavier
    et al.
    Linköping University, Department of Science and Technology, Physics and Electronics. Linköping University, The Institute of Technology.
    Herlogsson, Lars
    Linköping University, Department of Science and Technology, Physics and Electronics. Linköping University, The Institute of Technology.
    Larsson, Oscar
    Linköping University, Department of Science and Technology, Physics and Electronics. Linköping University, The Institute of Technology.
    Said, Elias
    Royal Institute of Technology, Stockholm, Sweden.
    Berggren, Magnus
    Linköping University, Department of Science and Technology, Physics and Electronics. Linköping University, The Institute of Technology.
    Polyelectrolyte-Gated Organic Field-Effect Transistors2010In: Iontronics: Ionic Carriers in Organic Electronic Materials and Devices / [ed] Janell Leger, Magnus Berggren, Sue Carter, Boca Raton: CRC Press; Taylor & Francis Group , 2010, p. 193-218Chapter in book (Other academic)
    Abstract [en]

    The field of organic electronics promises exciting new technologies based on inexpensive and mechanically flexible electronic devices. It has progressed over the past three decades to the point of commercial viability and is projected to grow to a 30 billion dollar market by the year 2015. Exploring new applications and device architectures, this book sets the tone for that exploration, gathering a community of experts in this area who are focused on the use of ionic functions to define the principle of operation in polymer devices. The contributors detail relevant technologies based on organic electronics, including polymer electrochromic devices and light-emitting electrochemical cells.

  • 2.
    Hamedi, Mahiar
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Biomolecular and Organic Electronics. Linköping University, The Institute of Technology.
    Herlogsson, Lars
    Linköping University, Department of Science and Technology. Linköping University, The Institute of Technology.
    Crispin, Xavier
    Linköping University, Department of Science and Technology. Linköping University, The Institute of Technology.
    Marcilla, Rebeca
    CIDETEC, Spain.
    Berggren, Magnus
    Linköping University, Department of Science and Technology. Linköping University, The Institute of Technology.
    Inganäs, Olle
    Linköping University, Department of Physics, Chemistry and Biology, Biomolecular and Organic Electronics. Linköping University, The Institute of Technology.
    Fiber-Embedded Electrolyte-Gated Field-Effect Transistors for e-Textiles2009In: Advanced Materials, ISSN 0935-9648, E-ISSN 1521-4095, Vol. 21, no 5, p. 573-577Article in journal (Refereed)
    Abstract [en]

    Electrolyte-gate organic field-effect transistors embedded at the junction of textile microfibers are demonstrated. The fiber transistor operates below I V and delivers large current densities. The transience of the organic thin-film transistors current and the impedance spectroscopy measurements reveal that the channel is formed in two steps.

  • 3. Order onlineBuy this publication >>
    Herlogsson, Lars
    Linköping University, Department of Science and Technology. Linköping University, The Institute of Technology.
    Electrolyte-Gated Organic Thin-Film Transistors2011Doctoral thesis, comprehensive summary (Other academic)
    Abstract [en]

    There has been a remarkable progress in the development of organic electronic materials since the discovery of conducting polymers more than three decades ago. Many of these materials can be processed from solution, in the form as inks. This allows for using traditional high-volume printing techniques for manufacturing of organic electronic devices on various flexible surfaces at low cost. Many of the envisioned applications will use printed batteries, organic solar cells or electromagnetic coupling for powering. This requires that the included devices are power efficient and can operate at low voltages.

    This thesis is focused on organic thin-film transistors that employ electrolytes as gate insulators. The high capacitance of the electrolyte layers allows the transistors to operate at very low voltages, at only 1 V. Polyanion-gated p-channel transistors and polycation-gated n-channel transistors are demonstrated. The mobile ions in the respective polyelectrolyte are attracted towards the gate electrode during transistor operation, while the polymer ions create a stable interface with the charged semiconductor channel. This suppresses electrochemical doping of the semiconductor bulk, which enables the transistors to fully operate in the field-effect mode. As a result, the transistors display relatively fast switching (≤ 100 µs). Interestingly, the switching speed of the transistors saturates as the channel length is reduced. This deviation from the downscaling rule is explained by that the ionic relaxation in the electrolyte limits the channel formation rather than the electronic transport in the semiconductor. Moreover, both unipolar and complementary integrated circuits based on polyelectrolyte-gated transistors are demonstrated. The complementary circuits operate at supply voltages down to 0.2 V, have a static power consumption of less than 2.5 nW per gate and display signal propagation delays down to 0.26 ms per stage. Hence, polyelectrolyte-gated circuits hold great promise for printed electronics applications driven by low-voltage and low-capacity power sources.

    List of papers
    1. Low-Voltage Polymer Field-Effect Transistors Gated via a Proton Conductor
    Open this publication in new window or tab >>Low-Voltage Polymer Field-Effect Transistors Gated via a Proton Conductor
    Show others...
    2007 (English)In: Advanced Materials, ISSN 0935-9648, E-ISSN 1521-4095, Vol. 19, no 1, p. 97-101Article in journal (Refereed) Published
    Abstract [en]

    Low operating voltages for p-channel organic field-effect transistors (OFETs) can be achieved by using an electrolyte as the gate insulator. However, mobile anions in the electrolyte can lead to undesired electrochemistry in the channel. In order to avoid this, a polyanionic electrolyte is used as the gate insulator. The resulting OFET has operating voltages of less than 1 V (see figure) and shows fast switching (less than 0.3 ms) in ambient atmosphere.

    Place, publisher, year, edition, pages
    Wiley Online, 2007
    Keywords
    Field-effect transistors, polymer ¿ Photolithography ¿ Polyelectrolytes ¿ Polymers
    National Category
    Engineering and Technology
    Identifiers
    urn:nbn:se:liu:diva-37442 (URN)10.1002/adma.200600871 (DOI)35829 (Local ID)35829 (Archive number)35829 (OAI)
    Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2023-12-06Bibliographically approved
    2. Downscaling of Organic Field-Effect Transistors with a Polyelectrolyte Gate Insulator
    Open this publication in new window or tab >>Downscaling of Organic Field-Effect Transistors with a Polyelectrolyte Gate Insulator
    Show others...
    2008 (English)In: Advanced Materials, ISSN 0935-9648, E-ISSN 1521-4095, Vol. 20, no 24, p. 4708-4713Article in journal (Refereed) Published
    Abstract [en]

    A polyelectrolyte is used as gate insulator material in organic field-effect transistors with self-aligned inkjet printed sub–micrometer channels. The small separation of the charges in the electric double layer at the electrolyte-semiconductor interface, which builds up in tens of microseconds, provides a very high transverse electric field in the channel that effectively suppresses short-channel effects at low applied gate voltages.

    Place, publisher, year, edition, pages
    Wiley Online, 2008
    Keywords
    Nanotechnology, Organic electronics, Organic field-effect transistors, Polyelectrolytes, Printed electronics
    National Category
    Engineering and Technology
    Identifiers
    urn:nbn:se:liu:diva-43272 (URN)10.1002/adma.200801756 (DOI)73282 (Local ID)73282 (Archive number)73282 (OAI)
    Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2023-12-06Bibliographically approved
    3. Low-Voltage Ring Oscillators Based on Polyelectrolyte-Gated Polymer Thin-Film Transistors
    Open this publication in new window or tab >>Low-Voltage Ring Oscillators Based on Polyelectrolyte-Gated Polymer Thin-Film Transistors
    Show others...
    2010 (English)In: Advanced Materials, ISSN 0935-9648, E-ISSN 1521-4095, Vol. 22, no 1, p. 72-76Article in journal (Refereed) Published
    Abstract [en]

    A polyanionic electrolyte is used as gate insulator in top-gate p-channel polymer thin-film transistors. The high capacitance of the polyelectrolyte film allows the transistors and integrated circuits to operate below 1.5 V. Seven-stage ring oscillators that operate at supply voltages down to 0.9 V and exhibit signal propagation delays as low as 300 µs per stage are reported.

    Keywords
    organic electronics, oscillators, polyelectrolytes, thin-film transistors
    National Category
    Natural Sciences
    Identifiers
    urn:nbn:se:liu:diva-53026 (URN)10.1002/adma.200901850 (DOI)
    Available from: 2010-01-14 Created: 2010-01-14 Last updated: 2023-12-06Bibliographically approved
    4. Polyelectrolyte-Gated Organic Complementary Circuits Operating at Low Power and Voltage
    Open this publication in new window or tab >>Polyelectrolyte-Gated Organic Complementary Circuits Operating at Low Power and Voltage
    2011 (English)In: Advanced Materials, ISSN 0935-9648, E-ISSN 1521-4095, Vol. 23, no 40, p. 4684-Article in journal (Refereed) Published
    Abstract [en]

    In this work, polyanionic and polycationic electrolytes are used as gate insulators in p- and n-channel thin-film transistors, respectively. These material combinations are motivated by that the mobile ions in the electrolytes will be attracted to the oppositely charged gate electrodes when the transistors are operated in the accumulation mode. The electronic charges in the semiconductor channels will thus be balanced by the polyions, which are effectively immobile and cannot penetrate into the semiconductor bulk and cause electrochemical doping.

    Place, publisher, year, edition, pages
    Wiley-Blackwell, 2011
    Keywords
    Organic electronics, Conjugated polymers, Polyelectrolytes, Thin-film transistors, Oscillators
    National Category
    Other Electrical Engineering, Electronic Engineering, Information Engineering
    Identifiers
    urn:nbn:se:liu:diva-69638 (URN)10.1002/adma.201101757 (DOI)000297009000014 ()
    Note
    Funding agencies|EU| 212311 |Swedish Government (Advanced Functional Materials)||Swedish Foundation for Strategic Research (OPEN)||Knut and Alice Wallenberg Foundation||Onnesjo Foundation||Available from: 2011-07-08 Created: 2011-07-08 Last updated: 2023-12-06Bibliographically approved
    5. Fiber-Embedded Electrolyte-Gated Field-Effect Transistors for e-Textiles
    Open this publication in new window or tab >>Fiber-Embedded Electrolyte-Gated Field-Effect Transistors for e-Textiles
    Show others...
    2009 (English)In: Advanced Materials, ISSN 0935-9648, E-ISSN 1521-4095, Vol. 21, no 5, p. 573-577Article in journal (Refereed) Published
    Abstract [en]

    Electrolyte-gate organic field-effect transistors embedded at the junction of textile microfibers are demonstrated. The fiber transistor operates below I V and delivers large current densities. The transience of the organic thin-film transistors current and the impedance spectroscopy measurements reveal that the channel is formed in two steps.

    Keywords
    Conducting polymers, electronic textile, fiber transistor, field-effect transistor
    National Category
    Engineering and Technology
    Identifiers
    urn:nbn:se:liu:diva-16982 (URN)10.1002/adma.200802681 (DOI)
    Available from: 2009-03-01 Created: 2009-02-27 Last updated: 2023-12-06Bibliographically approved
    6. A Water-Gate Organic Field-Effect Transistor
    Open this publication in new window or tab >>A Water-Gate Organic Field-Effect Transistor
    Show others...
    2010 (English)In: Advanced Materials, ISSN 0935-9648, E-ISSN 1521-4095, Vol. 22, no 23, p. 2565-2569Article in journal (Refereed) Published
    Abstract [en]

    High-dielectric-constant insulators, organic monolayers, and electrolytes have been successfully used to generate organic field-effect transistors operating at low voltages. Here, we report on a device gated with pure water. By replacing the gate dielectric by a simple water droplet, we produce a transistor that entirely operates in the field-effect mode of operation at voltages lower than 1V. This result creates opportunities for sensor applications using water-gated devices as transducing medium.

    Place, publisher, year, edition, pages
    John Wiley and Sons, Ltd, 2010
    National Category
    Engineering and Technology
    Identifiers
    urn:nbn:se:liu:diva-58247 (URN)10.1002/adma.200904163 (DOI)000279711100014 ()
    Available from: 2010-08-10 Created: 2010-08-09 Last updated: 2023-12-06Bibliographically approved
    Download full text (pdf)
    Electrolyte-Gated Organic Thin-Film Transistors
    Download (pdf)
    omslag
  • 4.
    Herlogsson, Lars
    et al.
    Linköping University, Department of Science and Technology. Linköping University, The Institute of Technology.
    Crispin, Xavier
    Linköping University, Department of Science and Technology. Linköping University, The Institute of Technology.
    Robinson, Nathaniel D
    Linköping University, Department of Science and Technology. Linköping University, The Institute of Technology.
    Sandberg, M.
    Thin Film Electronics AB.
    Hagel, O.-J.
    Thin Film Electronics AB.
    Gustafsson, G.
    Acreo AB.
    Berggren, Magnus
    Linköping University, Department of Science and Technology. Linköping University, The Institute of Technology.
    Low-Voltage Polymer Field-Effect Transistors Gated via a Proton Conductor2007In: Advanced Materials, ISSN 0935-9648, E-ISSN 1521-4095, Vol. 19, no 1, p. 97-101Article in journal (Refereed)
    Abstract [en]

    Low operating voltages for p-channel organic field-effect transistors (OFETs) can be achieved by using an electrolyte as the gate insulator. However, mobile anions in the electrolyte can lead to undesired electrochemistry in the channel. In order to avoid this, a polyanionic electrolyte is used as the gate insulator. The resulting OFET has operating voltages of less than 1 V (see figure) and shows fast switching (less than 0.3 ms) in ambient atmosphere.

  • 5.
    Herlogsson, Lars
    et al.
    Linköping University, Department of Science and Technology. Linköping University, The Institute of Technology.
    Crispin, Xavier
    Linköping University, Department of Science and Technology. Linköping University, The Institute of Technology.
    Tierney, Steve
    Merck Chemicals Ltd..
    Berggren, Magnus
    Linköping University, Department of Science and Technology, Physics and Electronics. Linköping University, The Institute of Technology.
    Polyelectrolyte-Gated Organic Complementary Circuits Operating at Low Power and Voltage2011In: Advanced Materials, ISSN 0935-9648, E-ISSN 1521-4095, Vol. 23, no 40, p. 4684-Article in journal (Refereed)
    Abstract [en]

    In this work, polyanionic and polycationic electrolytes are used as gate insulators in p- and n-channel thin-film transistors, respectively. These material combinations are motivated by that the mobile ions in the electrolytes will be attracted to the oppositely charged gate electrodes when the transistors are operated in the accumulation mode. The electronic charges in the semiconductor channels will thus be balanced by the polyions, which are effectively immobile and cannot penetrate into the semiconductor bulk and cause electrochemical doping.

  • 6.
    Herlogsson, Lars
    et al.
    Linköping University, Department of Science and Technology, Physics and Electronics. Linköping University, The Institute of Technology.
    Cölle, Michael
    Merck Chemicals Ltd Chilworth Science Park Southampton, SO16 7QD, UK.
    Tierney, Steven
    Merck Chemicals Ltd Chilworth Science Park Southampton, SO16 7QD,l UK.
    Crispin, Xavier
    Linköping University, Department of Science and Technology, Physics and Electronics. Linköping University, The Institute of Technology.
    Berggren, Magnus
    Linköping University, Department of Science and Technology, Physics and Electronics. Linköping University, The Institute of Technology.
    Low-Voltage Ring Oscillators Based on Polyelectrolyte-Gated Polymer Thin-Film Transistors2010In: Advanced Materials, ISSN 0935-9648, E-ISSN 1521-4095, Vol. 22, no 1, p. 72-76Article in journal (Refereed)
    Abstract [en]

    A polyanionic electrolyte is used as gate insulator in top-gate p-channel polymer thin-film transistors. The high capacitance of the polyelectrolyte film allows the transistors and integrated circuits to operate below 1.5 V. Seven-stage ring oscillators that operate at supply voltages down to 0.9 V and exhibit signal propagation delays as low as 300 µs per stage are reported.

  • 7.
    Herlogsson, Lars
    et al.
    Linköping University, Department of Science and Technology. Linköping University, The Institute of Technology.
    Noh, Yong-Young
    Cavendish Laboratory University of Cambridge, UK.
    Zhao, Ni
    Cavendish Laboratory University of Cambridge, UK.
    Crispin, Xavier
    Linköping University, Department of Science and Technology. Linköping University, The Institute of Technology.
    Sirringhaus, Henning
    Cavendish Laboratory University of Cambridge, UK.
    Berggren, Magnus
    Linköping University, Department of Science and Technology. Linköping University, The Institute of Technology.
    Downscaling of Organic Field-Effect Transistors with a Polyelectrolyte Gate Insulator2008In: Advanced Materials, ISSN 0935-9648, E-ISSN 1521-4095, Vol. 20, no 24, p. 4708-4713Article in journal (Refereed)
    Abstract [en]

    A polyelectrolyte is used as gate insulator material in organic field-effect transistors with self-aligned inkjet printed sub–micrometer channels. The small separation of the charges in the electric double layer at the electrolyte-semiconductor interface, which builds up in tens of microseconds, provides a very high transverse electric field in the channel that effectively suppresses short-channel effects at low applied gate voltages.

  • 8.
    Kergoat, Loig
    et al.
    University of Paris, France.
    Herlogsson, Lars
    Linköping University, Department of Science and Technology. Linköping University, The Institute of Technology.
    Braga, Daniele
    University of Paris, France.
    Piro, Benoit
    University of Paris, France.
    Pham, Minh-Chau
    University of Paris, France.
    Crispin, Xavier
    Linköping University, Department of Science and Technology. Linköping University, The Institute of Technology.
    Berggren, Magnus
    Linköping University, Department of Science and Technology. Linköping University, The Institute of Technology.
    Horowitz, Gilles
    University of Paris, France.
    A Water-Gate Organic Field-Effect Transistor2010In: Advanced Materials, ISSN 0935-9648, E-ISSN 1521-4095, Vol. 22, no 23, p. 2565-2569Article in journal (Refereed)
    Abstract [en]

    High-dielectric-constant insulators, organic monolayers, and electrolytes have been successfully used to generate organic field-effect transistors operating at low voltages. Here, we report on a device gated with pure water. By replacing the gate dielectric by a simple water droplet, we produce a transistor that entirely operates in the field-effect mode of operation at voltages lower than 1V. This result creates opportunities for sensor applications using water-gated devices as transducing medium.

  • 9.
    Laiho, Ari
    et al.
    Linköping University, Department of Science and Technology. Linköping University, The Institute of Technology.
    Herlogsson, Lars
    Linköping University, Department of Science and Technology. Linköping University, The Institute of Technology.
    Forchheimer, Robert
    Linköping University, Department of Electrical Engineering. Linköping University, The Institute of Technology.
    Crispin, Xavier
    Linköping University, Department of Science and Technology. Linköping University, The Institute of Technology.
    Berggren, Magnus
    Linköping University, Department of Science and Technology, Physics and Electronics. Linköping University, The Institute of Technology.
    Controlling the dimensionality of charge transport in organic thin-film transistors2011In: Proceedings of the National Academy of Sciences of the United States of America, ISSN 0027-8424, E-ISSN 1091-6490, Vol. 108, no 37, p. 15069-15073Article in journal (Refereed)
    Abstract [en]

    Electrolyte-gated organic thin-film transistors (OTFTs) can offer a feasible platform for future flexible, large-area and low-cost electronic applications. These transistors can be divided into two groups on the basis of their operation mechanism: (i) field-effect transistors that switch fast but carry much less current than (ii) the electrochemical transistors which, on the contrary, switch slowly. An attractive approach would be to combine the benefits of the field-effect and the electrochemical transistors into one transistor that would both switch fast and carry high current densities. Here we report the development of a polyelectrolyte-gated OTFT based on conjugated polyelectrolytes, and we demonstrate that the OTFTs can be controllably operated either in the field-effect or the electrochemical regime. Moreover, we show that the extent of electrochemical doping can be restricted to a few monolayers of the conjugated polyelectrolyte film, which allows both high current densities and fast switching speeds at the same time. We propose an operation mechanism based on self-doping of the conjugated polyelectrolyte backbone by its ionic side groups.

    Download full text (pdf)
    fulltext
  • 10.
    Liu, Jiang
    et al.
    Linköping University, Department of Science and Technology. Linköping University, The Institute of Technology.
    Herlogsson, Lars
    Linköping University, Department of Science and Technology. Linköping University, The Institute of Technology.
    Sawadtee, A
    Acreo AB.
    Favia, P
    IMEC.
    Sandberg, M
    Acreo AB.
    Crispin, Xavier
    Linköping University, Department of Science and Technology. Linköping University, The Institute of Technology.
    Engquist, Isak
    Linköping University, Department of Science and Technology. Linköping University, The Institute of Technology.
    Berggren, Magnus
    Linköping University, Department of Science and Technology. Linköping University, The Institute of Technology.
    Vertical polyelectrolyte-gated organic field-effect transistors2010In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 97, p. 103303-Article in journal (Refereed)
    Abstract [en]

    Short-channel, vertically structured organic transistors with a polyelectrolyte as gate insulator are demonstrated. The devices are fabricated using low-resolution, self-aligned, and mask-free photolithography. Owing to the use of a polyelectrolyte, our vertical electrolyte-gated organic field-effect transistors (VEGOFETs), with channel lengths of 2.2 and 0.7 μm, operate at voltages below one volt. The VEGOFETs show clear saturation and switch on and off in 200 μs. A vertical geometry to achieve short-transistor channels and the use of an electrolyte makes these transistors promising candidates for printed logics and drivers with low operating voltage.

    Download full text (pdf)
    FULLTEXT01
  • 11.
    Said, Elias
    et al.
    Linköping University, Department of Science and Technology. Linköping University, The Institute of Technology.
    Crispin, Xavier
    Linköping University, Department of Science and Technology. Linköping University, The Institute of Technology.
    Herlogsson, Lars
    Linköping University, Department of Science and Technology. Linköping University, The Institute of Technology.
    Elhag, Sami
    Linköping University, Department of Science and Technology. Linköping University, The Institute of Technology.
    Robinson, Nathaniel D.
    Linköping University, Department of Science and Technology. Linköping University, The Institute of Technology.
    Berggren, Magnus
    Linköping University, Department of Science and Technology. Linköping University, The Institute of Technology.
    Polymer field-effect transistor gated via a poly(styrenesulfonic acid) thin film2006In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 89, no 14, p. 143507-Article in journal (Refereed)
    Abstract [en]

    A polyanionic proton conductor, named poly(styrenesulfonic acid) (PSSH), is used to gate an organic field-effect transistor (OFET) based on poly(3-hexylthiophene) (P3HT). Upon applying a gate bias, large electric double layer capacitors (EDLCs) are formed quickly at the gate-PSSH and P3HT-PSSH interfaces due to proton migration in the polyelectrolyte. This type of robust transistor, called an EDLC-OFET, displays fast response (<1  ms) and operates at low voltages (<1  V). The results presented are relevant for low-cost printed polymer electronics.

  • 12.
    Tu, Deyu
    et al.
    Linköping University, Department of Electrical Engineering, Information Coding. Linköping University, The Institute of Technology.
    Forchheimer, Robert
    Linköping University, Department of Electrical Engineering, Information Coding. Linköping University, The Institute of Technology.
    Herlogsson, Lars
    Linköping University, The Institute of Technology. Linköping University, Department of Science and Technology, Physics and Electronics.
    Crispin, Xavier
    Linköping University, The Institute of Technology. Linköping University, Department of Science and Technology, Physics and Electronics.
    Berggren, Magnus
    Linköping University, The Institute of Technology. Linköping University, Department of Science and Technology, Physics and Electronics.
    Parameter extraction for electrolyte-gated organic field effect transistor modeling2011Conference paper (Refereed)
    Abstract [en]

    We present a methodology to extract parameters for an electrolyte-gated organic field effect transistor DC model. The model is based on charge drift/diffusion transport under electric field and covers all regimes. Voltage dependent capacitance, mobility, contact resistance and threshold voltage shift are taken into account in this model. The feature parameters in the model are simply extracted from the transfer or output characteristics of electrolyte-gated organic field effect transistors. The extracted parameters are verified by good agreements between experimental and simulated results.

    Download full text (pdf)
    fulltext
  • 13.
    Tu, Deyu
    et al.
    Linköping University, The Institute of Technology. Linköping University, Department of Electrical Engineering, Information Coding.
    Herlogsson, Lars
    Linköping University, Department of Science and Technology. Linköping University, The Institute of Technology.
    Kergoat, Loig
    Linköping University, Department of Science and Technology. Linköping University, The Institute of Technology.
    Crispin, Xavier
    Linköping University, The Institute of Technology. Linköping University, Department of Science and Technology, Physics and Electronics.
    Berggren, Magnus
    Linköping University, Department of Science and Technology, Physics and Electronics. Linköping University, The Institute of Technology.
    A Static Model for Electrolyte-Gated Organic Field-Effect Transistors2011In: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 58, no 10, p. 3574-3582Article in journal (Refereed)
    Abstract [en]

    We present a dc model to simulate the static performance of electrolyte-gated organic field-effect transistors. The channel current is expressed as charge drift transport under electric field. The charges accumulated in the channel are considered being contributed fromvoltage-dependent electric-doublelayer capacitance. The voltage-dependent contact effect and short-channel effect are also taken into account in this model. A straightforward and efficient methodology is presented to extract the model parameters. The versatility of this model is discussed as well. The model is verified by the good agreement between simulation and experimental data.

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    fulltext
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