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  • 1.
    Crispin, Xavier
    et al.
    Linköpings universitet, Institutionen för teknik och naturvetenskap, Fysik och elektroteknik. Linköpings universitet, Tekniska högskolan.
    Herlogsson, Lars
    Linköpings universitet, Institutionen för teknik och naturvetenskap, Fysik och elektroteknik. Linköpings universitet, Tekniska högskolan.
    Larsson, Oscar
    Linköpings universitet, Institutionen för teknik och naturvetenskap, Fysik och elektroteknik. Linköpings universitet, Tekniska högskolan.
    Said, Elias
    Royal Institute of Technology, Stockholm, Sweden.
    Berggren, Magnus
    Linköpings universitet, Institutionen för teknik och naturvetenskap, Fysik och elektroteknik. Linköpings universitet, Tekniska högskolan.
    Polyelectrolyte-Gated Organic Field-Effect Transistors2010Inngår i: Iontronics: Ionic Carriers in Organic Electronic Materials and Devices / [ed] Janell Leger, Magnus Berggren, Sue Carter, Boca Raton: CRC Press; Taylor & Francis Group , 2010, s. 193-218Kapittel i bok, del av antologi (Annet vitenskapelig)
    Abstract [en]

    The field of organic electronics promises exciting new technologies based on inexpensive and mechanically flexible electronic devices. It has progressed over the past three decades to the point of commercial viability and is projected to grow to a 30 billion dollar market by the year 2015. Exploring new applications and device architectures, this book sets the tone for that exploration, gathering a community of experts in this area who are focused on the use of ionic functions to define the principle of operation in polymer devices. The contributors detail relevant technologies based on organic electronics, including polymer electrochromic devices and light-emitting electrochemical cells.

  • 2.
    Hamedi, Mahiar
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Biomolekylär och Organisk Elektronik. Linköpings universitet, Tekniska högskolan.
    Herlogsson, Lars
    Linköpings universitet, Institutionen för teknik och naturvetenskap. Linköpings universitet, Tekniska högskolan.
    Crispin, Xavier
    Linköpings universitet, Institutionen för teknik och naturvetenskap. Linköpings universitet, Tekniska högskolan.
    Marcilla, Rebeca
    CIDETEC, Spain.
    Berggren, Magnus
    Linköpings universitet, Institutionen för teknik och naturvetenskap. Linköpings universitet, Tekniska högskolan.
    Inganäs, Olle
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Biomolekylär och Organisk Elektronik. Linköpings universitet, Tekniska högskolan.
    Fiber-Embedded Electrolyte-Gated Field-Effect Transistors for e-Textiles2009Inngår i: Advanced Materials, ISSN 0935-9648, E-ISSN 1521-4095, Vol. 21, nr 5, s. 573-577Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    Electrolyte-gate organic field-effect transistors embedded at the junction of textile microfibers are demonstrated. The fiber transistor operates below I V and delivers large current densities. The transience of the organic thin-film transistors current and the impedance spectroscopy measurements reveal that the channel is formed in two steps.

  • 3. Bestill onlineKjøp publikasjonen >>
    Herlogsson, Lars
    Linköpings universitet, Institutionen för teknik och naturvetenskap. Linköpings universitet, Tekniska högskolan.
    Electrolyte-Gated Organic Thin-Film Transistors2011Doktoravhandling, med artikler (Annet vitenskapelig)
    Abstract [en]

    There has been a remarkable progress in the development of organic electronic materials since the discovery of conducting polymers more than three decades ago. Many of these materials can be processed from solution, in the form as inks. This allows for using traditional high-volume printing techniques for manufacturing of organic electronic devices on various flexible surfaces at low cost. Many of the envisioned applications will use printed batteries, organic solar cells or electromagnetic coupling for powering. This requires that the included devices are power efficient and can operate at low voltages.

    This thesis is focused on organic thin-film transistors that employ electrolytes as gate insulators. The high capacitance of the electrolyte layers allows the transistors to operate at very low voltages, at only 1 V. Polyanion-gated p-channel transistors and polycation-gated n-channel transistors are demonstrated. The mobile ions in the respective polyelectrolyte are attracted towards the gate electrode during transistor operation, while the polymer ions create a stable interface with the charged semiconductor channel. This suppresses electrochemical doping of the semiconductor bulk, which enables the transistors to fully operate in the field-effect mode. As a result, the transistors display relatively fast switching (≤ 100 µs). Interestingly, the switching speed of the transistors saturates as the channel length is reduced. This deviation from the downscaling rule is explained by that the ionic relaxation in the electrolyte limits the channel formation rather than the electronic transport in the semiconductor. Moreover, both unipolar and complementary integrated circuits based on polyelectrolyte-gated transistors are demonstrated. The complementary circuits operate at supply voltages down to 0.2 V, have a static power consumption of less than 2.5 nW per gate and display signal propagation delays down to 0.26 ms per stage. Hence, polyelectrolyte-gated circuits hold great promise for printed electronics applications driven by low-voltage and low-capacity power sources.

    Delarbeid
    1. Low-Voltage Polymer Field-Effect Transistors Gated via a Proton Conductor
    Åpne denne publikasjonen i ny fane eller vindu >>Low-Voltage Polymer Field-Effect Transistors Gated via a Proton Conductor
    Vise andre…
    2007 (engelsk)Inngår i: Advanced Materials, ISSN 0935-9648, E-ISSN 1521-4095, Vol. 19, nr 1, s. 97-101Artikkel i tidsskrift (Fagfellevurdert) Published
    Abstract [en]

    Low operating voltages for p-channel organic field-effect transistors (OFETs) can be achieved by using an electrolyte as the gate insulator. However, mobile anions in the electrolyte can lead to undesired electrochemistry in the channel. In order to avoid this, a polyanionic electrolyte is used as the gate insulator. The resulting OFET has operating voltages of less than 1 V (see figure) and shows fast switching (less than 0.3 ms) in ambient atmosphere.

    sted, utgiver, år, opplag, sider
    Wiley Online, 2007
    Emneord
    Field-effect transistors, polymer ¿ Photolithography ¿ Polyelectrolytes ¿ Polymers
    HSV kategori
    Identifikatorer
    urn:nbn:se:liu:diva-37442 (URN)10.1002/adma.200600871 (DOI)35829 (Lokal ID)35829 (Arkivnummer)35829 (OAI)
    Tilgjengelig fra: 2009-10-10 Laget: 2009-10-10 Sist oppdatert: 2023-12-06bibliografisk kontrollert
    2. Downscaling of Organic Field-Effect Transistors with a Polyelectrolyte Gate Insulator
    Åpne denne publikasjonen i ny fane eller vindu >>Downscaling of Organic Field-Effect Transistors with a Polyelectrolyte Gate Insulator
    Vise andre…
    2008 (engelsk)Inngår i: Advanced Materials, ISSN 0935-9648, E-ISSN 1521-4095, Vol. 20, nr 24, s. 4708-4713Artikkel i tidsskrift (Fagfellevurdert) Published
    Abstract [en]

    A polyelectrolyte is used as gate insulator material in organic field-effect transistors with self-aligned inkjet printed sub–micrometer channels. The small separation of the charges in the electric double layer at the electrolyte-semiconductor interface, which builds up in tens of microseconds, provides a very high transverse electric field in the channel that effectively suppresses short-channel effects at low applied gate voltages.

    sted, utgiver, år, opplag, sider
    Wiley Online, 2008
    Emneord
    Nanotechnology, Organic electronics, Organic field-effect transistors, Polyelectrolytes, Printed electronics
    HSV kategori
    Identifikatorer
    urn:nbn:se:liu:diva-43272 (URN)10.1002/adma.200801756 (DOI)73282 (Lokal ID)73282 (Arkivnummer)73282 (OAI)
    Tilgjengelig fra: 2009-10-10 Laget: 2009-10-10 Sist oppdatert: 2023-12-06bibliografisk kontrollert
    3. Low-Voltage Ring Oscillators Based on Polyelectrolyte-Gated Polymer Thin-Film Transistors
    Åpne denne publikasjonen i ny fane eller vindu >>Low-Voltage Ring Oscillators Based on Polyelectrolyte-Gated Polymer Thin-Film Transistors
    Vise andre…
    2010 (engelsk)Inngår i: Advanced Materials, ISSN 0935-9648, E-ISSN 1521-4095, Vol. 22, nr 1, s. 72-76Artikkel i tidsskrift (Fagfellevurdert) Published
    Abstract [en]

    A polyanionic electrolyte is used as gate insulator in top-gate p-channel polymer thin-film transistors. The high capacitance of the polyelectrolyte film allows the transistors and integrated circuits to operate below 1.5 V. Seven-stage ring oscillators that operate at supply voltages down to 0.9 V and exhibit signal propagation delays as low as 300 µs per stage are reported.

    Emneord
    organic electronics, oscillators, polyelectrolytes, thin-film transistors
    HSV kategori
    Identifikatorer
    urn:nbn:se:liu:diva-53026 (URN)10.1002/adma.200901850 (DOI)
    Tilgjengelig fra: 2010-01-14 Laget: 2010-01-14 Sist oppdatert: 2023-12-06bibliografisk kontrollert
    4. Polyelectrolyte-Gated Organic Complementary Circuits Operating at Low Power and Voltage
    Åpne denne publikasjonen i ny fane eller vindu >>Polyelectrolyte-Gated Organic Complementary Circuits Operating at Low Power and Voltage
    2011 (engelsk)Inngår i: Advanced Materials, ISSN 0935-9648, E-ISSN 1521-4095, Vol. 23, nr 40, s. 4684-Artikkel i tidsskrift (Fagfellevurdert) Published
    Abstract [en]

    In this work, polyanionic and polycationic electrolytes are used as gate insulators in p- and n-channel thin-film transistors, respectively. These material combinations are motivated by that the mobile ions in the electrolytes will be attracted to the oppositely charged gate electrodes when the transistors are operated in the accumulation mode. The electronic charges in the semiconductor channels will thus be balanced by the polyions, which are effectively immobile and cannot penetrate into the semiconductor bulk and cause electrochemical doping.

    sted, utgiver, år, opplag, sider
    Wiley-Blackwell, 2011
    Emneord
    Organic electronics, Conjugated polymers, Polyelectrolytes, Thin-film transistors, Oscillators
    HSV kategori
    Identifikatorer
    urn:nbn:se:liu:diva-69638 (URN)10.1002/adma.201101757 (DOI)000297009000014 ()
    Merknad
    Funding agencies|EU| 212311 |Swedish Government (Advanced Functional Materials)||Swedish Foundation for Strategic Research (OPEN)||Knut and Alice Wallenberg Foundation||Onnesjo Foundation||Tilgjengelig fra: 2011-07-08 Laget: 2011-07-08 Sist oppdatert: 2023-12-06bibliografisk kontrollert
    5. Fiber-Embedded Electrolyte-Gated Field-Effect Transistors for e-Textiles
    Åpne denne publikasjonen i ny fane eller vindu >>Fiber-Embedded Electrolyte-Gated Field-Effect Transistors for e-Textiles
    Vise andre…
    2009 (engelsk)Inngår i: Advanced Materials, ISSN 0935-9648, E-ISSN 1521-4095, Vol. 21, nr 5, s. 573-577Artikkel i tidsskrift (Fagfellevurdert) Published
    Abstract [en]

    Electrolyte-gate organic field-effect transistors embedded at the junction of textile microfibers are demonstrated. The fiber transistor operates below I V and delivers large current densities. The transience of the organic thin-film transistors current and the impedance spectroscopy measurements reveal that the channel is formed in two steps.

    Emneord
    Conducting polymers, electronic textile, fiber transistor, field-effect transistor
    HSV kategori
    Identifikatorer
    urn:nbn:se:liu:diva-16982 (URN)10.1002/adma.200802681 (DOI)
    Tilgjengelig fra: 2009-03-01 Laget: 2009-02-27 Sist oppdatert: 2023-12-06bibliografisk kontrollert
    6. A Water-Gate Organic Field-Effect Transistor
    Åpne denne publikasjonen i ny fane eller vindu >>A Water-Gate Organic Field-Effect Transistor
    Vise andre…
    2010 (engelsk)Inngår i: Advanced Materials, ISSN 0935-9648, E-ISSN 1521-4095, Vol. 22, nr 23, s. 2565-2569Artikkel i tidsskrift (Fagfellevurdert) Published
    Abstract [en]

    High-dielectric-constant insulators, organic monolayers, and electrolytes have been successfully used to generate organic field-effect transistors operating at low voltages. Here, we report on a device gated with pure water. By replacing the gate dielectric by a simple water droplet, we produce a transistor that entirely operates in the field-effect mode of operation at voltages lower than 1V. This result creates opportunities for sensor applications using water-gated devices as transducing medium.

    sted, utgiver, år, opplag, sider
    John Wiley and Sons, Ltd, 2010
    HSV kategori
    Identifikatorer
    urn:nbn:se:liu:diva-58247 (URN)10.1002/adma.200904163 (DOI)000279711100014 ()
    Tilgjengelig fra: 2010-08-10 Laget: 2010-08-09 Sist oppdatert: 2023-12-06bibliografisk kontrollert
    Fulltekst (pdf)
    Electrolyte-Gated Organic Thin-Film Transistors
    Download (pdf)
    omslag
  • 4.
    Herlogsson, Lars
    et al.
    Linköpings universitet, Institutionen för teknik och naturvetenskap. Linköpings universitet, Tekniska högskolan.
    Crispin, Xavier
    Linköpings universitet, Institutionen för teknik och naturvetenskap. Linköpings universitet, Tekniska högskolan.
    Robinson, Nathaniel D
    Linköpings universitet, Institutionen för teknik och naturvetenskap. Linköpings universitet, Tekniska högskolan.
    Sandberg, M.
    Thin Film Electronics AB.
    Hagel, O.-J.
    Thin Film Electronics AB.
    Gustafsson, G.
    Acreo AB.
    Berggren, Magnus
    Linköpings universitet, Institutionen för teknik och naturvetenskap. Linköpings universitet, Tekniska högskolan.
    Low-Voltage Polymer Field-Effect Transistors Gated via a Proton Conductor2007Inngår i: Advanced Materials, ISSN 0935-9648, E-ISSN 1521-4095, Vol. 19, nr 1, s. 97-101Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    Low operating voltages for p-channel organic field-effect transistors (OFETs) can be achieved by using an electrolyte as the gate insulator. However, mobile anions in the electrolyte can lead to undesired electrochemistry in the channel. In order to avoid this, a polyanionic electrolyte is used as the gate insulator. The resulting OFET has operating voltages of less than 1 V (see figure) and shows fast switching (less than 0.3 ms) in ambient atmosphere.

  • 5.
    Herlogsson, Lars
    et al.
    Linköpings universitet, Institutionen för teknik och naturvetenskap. Linköpings universitet, Tekniska högskolan.
    Crispin, Xavier
    Linköpings universitet, Institutionen för teknik och naturvetenskap. Linköpings universitet, Tekniska högskolan.
    Tierney, Steve
    Merck Chemicals Ltd..
    Berggren, Magnus
    Linköpings universitet, Institutionen för teknik och naturvetenskap, Fysik och elektroteknik. Linköpings universitet, Tekniska högskolan.
    Polyelectrolyte-Gated Organic Complementary Circuits Operating at Low Power and Voltage2011Inngår i: Advanced Materials, ISSN 0935-9648, E-ISSN 1521-4095, Vol. 23, nr 40, s. 4684-Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    In this work, polyanionic and polycationic electrolytes are used as gate insulators in p- and n-channel thin-film transistors, respectively. These material combinations are motivated by that the mobile ions in the electrolytes will be attracted to the oppositely charged gate electrodes when the transistors are operated in the accumulation mode. The electronic charges in the semiconductor channels will thus be balanced by the polyions, which are effectively immobile and cannot penetrate into the semiconductor bulk and cause electrochemical doping.

  • 6.
    Herlogsson, Lars
    et al.
    Linköpings universitet, Institutionen för teknik och naturvetenskap, Fysik och elektroteknik. Linköpings universitet, Tekniska högskolan.
    Cölle, Michael
    Merck Chemicals Ltd Chilworth Science Park Southampton, SO16 7QD, UK.
    Tierney, Steven
    Merck Chemicals Ltd Chilworth Science Park Southampton, SO16 7QD,l UK.
    Crispin, Xavier
    Linköpings universitet, Institutionen för teknik och naturvetenskap, Fysik och elektroteknik. Linköpings universitet, Tekniska högskolan.
    Berggren, Magnus
    Linköpings universitet, Institutionen för teknik och naturvetenskap, Fysik och elektroteknik. Linköpings universitet, Tekniska högskolan.
    Low-Voltage Ring Oscillators Based on Polyelectrolyte-Gated Polymer Thin-Film Transistors2010Inngår i: Advanced Materials, ISSN 0935-9648, E-ISSN 1521-4095, Vol. 22, nr 1, s. 72-76Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    A polyanionic electrolyte is used as gate insulator in top-gate p-channel polymer thin-film transistors. The high capacitance of the polyelectrolyte film allows the transistors and integrated circuits to operate below 1.5 V. Seven-stage ring oscillators that operate at supply voltages down to 0.9 V and exhibit signal propagation delays as low as 300 µs per stage are reported.

  • 7.
    Herlogsson, Lars
    et al.
    Linköpings universitet, Institutionen för teknik och naturvetenskap. Linköpings universitet, Tekniska högskolan.
    Noh, Yong-Young
    Cavendish Laboratory University of Cambridge, UK.
    Zhao, Ni
    Cavendish Laboratory University of Cambridge, UK.
    Crispin, Xavier
    Linköpings universitet, Institutionen för teknik och naturvetenskap. Linköpings universitet, Tekniska högskolan.
    Sirringhaus, Henning
    Cavendish Laboratory University of Cambridge, UK.
    Berggren, Magnus
    Linköpings universitet, Institutionen för teknik och naturvetenskap. Linköpings universitet, Tekniska högskolan.
    Downscaling of Organic Field-Effect Transistors with a Polyelectrolyte Gate Insulator2008Inngår i: Advanced Materials, ISSN 0935-9648, E-ISSN 1521-4095, Vol. 20, nr 24, s. 4708-4713Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    A polyelectrolyte is used as gate insulator material in organic field-effect transistors with self-aligned inkjet printed sub–micrometer channels. The small separation of the charges in the electric double layer at the electrolyte-semiconductor interface, which builds up in tens of microseconds, provides a very high transverse electric field in the channel that effectively suppresses short-channel effects at low applied gate voltages.

  • 8.
    Kergoat, Loig
    et al.
    University of Paris, France.
    Herlogsson, Lars
    Linköpings universitet, Institutionen för teknik och naturvetenskap. Linköpings universitet, Tekniska högskolan.
    Braga, Daniele
    University of Paris, France.
    Piro, Benoit
    University of Paris, France.
    Pham, Minh-Chau
    University of Paris, France.
    Crispin, Xavier
    Linköpings universitet, Institutionen för teknik och naturvetenskap. Linköpings universitet, Tekniska högskolan.
    Berggren, Magnus
    Linköpings universitet, Institutionen för teknik och naturvetenskap. Linköpings universitet, Tekniska högskolan.
    Horowitz, Gilles
    University of Paris, France.
    A Water-Gate Organic Field-Effect Transistor2010Inngår i: Advanced Materials, ISSN 0935-9648, E-ISSN 1521-4095, Vol. 22, nr 23, s. 2565-2569Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    High-dielectric-constant insulators, organic monolayers, and electrolytes have been successfully used to generate organic field-effect transistors operating at low voltages. Here, we report on a device gated with pure water. By replacing the gate dielectric by a simple water droplet, we produce a transistor that entirely operates in the field-effect mode of operation at voltages lower than 1V. This result creates opportunities for sensor applications using water-gated devices as transducing medium.

  • 9.
    Laiho, Ari
    et al.
    Linköpings universitet, Institutionen för teknik och naturvetenskap. Linköpings universitet, Tekniska högskolan.
    Herlogsson, Lars
    Linköpings universitet, Institutionen för teknik och naturvetenskap. Linköpings universitet, Tekniska högskolan.
    Forchheimer, Robert
    Linköpings universitet, Institutionen för systemteknik. Linköpings universitet, Tekniska högskolan.
    Crispin, Xavier
    Linköpings universitet, Institutionen för teknik och naturvetenskap. Linköpings universitet, Tekniska högskolan.
    Berggren, Magnus
    Linköpings universitet, Institutionen för teknik och naturvetenskap, Fysik och elektroteknik. Linköpings universitet, Tekniska högskolan.
    Controlling the dimensionality of charge transport in organic thin-film transistors2011Inngår i: Proceedings of the National Academy of Sciences of the United States of America, ISSN 0027-8424, E-ISSN 1091-6490, Vol. 108, nr 37, s. 15069-15073Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    Electrolyte-gated organic thin-film transistors (OTFTs) can offer a feasible platform for future flexible, large-area and low-cost electronic applications. These transistors can be divided into two groups on the basis of their operation mechanism: (i) field-effect transistors that switch fast but carry much less current than (ii) the electrochemical transistors which, on the contrary, switch slowly. An attractive approach would be to combine the benefits of the field-effect and the electrochemical transistors into one transistor that would both switch fast and carry high current densities. Here we report the development of a polyelectrolyte-gated OTFT based on conjugated polyelectrolytes, and we demonstrate that the OTFTs can be controllably operated either in the field-effect or the electrochemical regime. Moreover, we show that the extent of electrochemical doping can be restricted to a few monolayers of the conjugated polyelectrolyte film, which allows both high current densities and fast switching speeds at the same time. We propose an operation mechanism based on self-doping of the conjugated polyelectrolyte backbone by its ionic side groups.

    Fulltekst (pdf)
    fulltext
  • 10.
    Liu, Jiang
    et al.
    Linköpings universitet, Institutionen för teknik och naturvetenskap. Linköpings universitet, Tekniska högskolan.
    Herlogsson, Lars
    Linköpings universitet, Institutionen för teknik och naturvetenskap. Linköpings universitet, Tekniska högskolan.
    Sawadtee, A
    Acreo AB.
    Favia, P
    IMEC.
    Sandberg, M
    Acreo AB.
    Crispin, Xavier
    Linköpings universitet, Institutionen för teknik och naturvetenskap. Linköpings universitet, Tekniska högskolan.
    Engquist, Isak
    Linköpings universitet, Institutionen för teknik och naturvetenskap. Linköpings universitet, Tekniska högskolan.
    Berggren, Magnus
    Linköpings universitet, Institutionen för teknik och naturvetenskap. Linköpings universitet, Tekniska högskolan.
    Vertical polyelectrolyte-gated organic field-effect transistors2010Inngår i: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 97, s. 103303-Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    Short-channel, vertically structured organic transistors with a polyelectrolyte as gate insulator are demonstrated. The devices are fabricated using low-resolution, self-aligned, and mask-free photolithography. Owing to the use of a polyelectrolyte, our vertical electrolyte-gated organic field-effect transistors (VEGOFETs), with channel lengths of 2.2 and 0.7 μm, operate at voltages below one volt. The VEGOFETs show clear saturation and switch on and off in 200 μs. A vertical geometry to achieve short-transistor channels and the use of an electrolyte makes these transistors promising candidates for printed logics and drivers with low operating voltage.

    Fulltekst (pdf)
    FULLTEXT01
  • 11.
    Said, Elias
    et al.
    Linköpings universitet, Institutionen för teknik och naturvetenskap. Linköpings universitet, Tekniska högskolan.
    Crispin, Xavier
    Linköpings universitet, Institutionen för teknik och naturvetenskap. Linköpings universitet, Tekniska högskolan.
    Herlogsson, Lars
    Linköpings universitet, Institutionen för teknik och naturvetenskap. Linköpings universitet, Tekniska högskolan.
    Elhag, Sami
    Linköpings universitet, Institutionen för teknik och naturvetenskap. Linköpings universitet, Tekniska högskolan.
    Robinson, Nathaniel D.
    Linköpings universitet, Institutionen för teknik och naturvetenskap. Linköpings universitet, Tekniska högskolan.
    Berggren, Magnus
    Linköpings universitet, Institutionen för teknik och naturvetenskap. Linköpings universitet, Tekniska högskolan.
    Polymer field-effect transistor gated via a poly(styrenesulfonic acid) thin film2006Inngår i: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 89, nr 14, s. 143507-Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    A polyanionic proton conductor, named poly(styrenesulfonic acid) (PSSH), is used to gate an organic field-effect transistor (OFET) based on poly(3-hexylthiophene) (P3HT). Upon applying a gate bias, large electric double layer capacitors (EDLCs) are formed quickly at the gate-PSSH and P3HT-PSSH interfaces due to proton migration in the polyelectrolyte. This type of robust transistor, called an EDLC-OFET, displays fast response (<1  ms) and operates at low voltages (<1  V). The results presented are relevant for low-cost printed polymer electronics.

  • 12.
    Tu, Deyu
    et al.
    Linköpings universitet, Institutionen för systemteknik, Informationskodning. Linköpings universitet, Tekniska högskolan.
    Forchheimer, Robert
    Linköpings universitet, Institutionen för systemteknik, Informationskodning. Linköpings universitet, Tekniska högskolan.
    Herlogsson, Lars
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för teknik och naturvetenskap, Fysik och elektroteknik.
    Crispin, Xavier
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för teknik och naturvetenskap, Fysik och elektroteknik.
    Berggren, Magnus
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för teknik och naturvetenskap, Fysik och elektroteknik.
    Parameter extraction for electrolyte-gated organic field effect transistor modeling2011Konferansepaper (Fagfellevurdert)
    Abstract [en]

    We present a methodology to extract parameters for an electrolyte-gated organic field effect transistor DC model. The model is based on charge drift/diffusion transport under electric field and covers all regimes. Voltage dependent capacitance, mobility, contact resistance and threshold voltage shift are taken into account in this model. The feature parameters in the model are simply extracted from the transfer or output characteristics of electrolyte-gated organic field effect transistors. The extracted parameters are verified by good agreements between experimental and simulated results.

    Fulltekst (pdf)
    fulltext
  • 13.
    Tu, Deyu
    et al.
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för systemteknik, Informationskodning.
    Herlogsson, Lars
    Linköpings universitet, Institutionen för teknik och naturvetenskap. Linköpings universitet, Tekniska högskolan.
    Kergoat, Loig
    Linköpings universitet, Institutionen för teknik och naturvetenskap. Linköpings universitet, Tekniska högskolan.
    Crispin, Xavier
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för teknik och naturvetenskap, Fysik och elektroteknik.
    Berggren, Magnus
    Linköpings universitet, Institutionen för teknik och naturvetenskap, Fysik och elektroteknik. Linköpings universitet, Tekniska högskolan.
    A Static Model for Electrolyte-Gated Organic Field-Effect Transistors2011Inngår i: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 58, nr 10, s. 3574-3582Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    We present a dc model to simulate the static performance of electrolyte-gated organic field-effect transistors. The channel current is expressed as charge drift transport under electric field. The charges accumulated in the channel are considered being contributed fromvoltage-dependent electric-doublelayer capacitance. The voltage-dependent contact effect and short-channel effect are also taken into account in this model. A straightforward and efficient methodology is presented to extract the model parameters. The versatility of this model is discussed as well. The model is verified by the good agreement between simulation and experimental data.

    Fulltekst (pdf)
    fulltext
1 - 13 of 13
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