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  • 1.
    Beckers, Manfred
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
    Eriksson, Fredrik
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
    Lauridsen, Jonas
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
    Baehtz, C.
    Forschungszentrum Dresden Rossendorf.
    Jensen, Jens
    Linköpings universitet, Institutionen för fysik, kemi och biologi. Linköpings universitet, Tekniska högskolan.
    Hultman, Lars
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
    Formation of basal plane fiber-textured Ti2AlN films on amorphous substrates2010Ingår i: PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, ISSN 1862-6254, Vol. 4, nr 05-Jun, s. 121-123Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    The synthesis of fiber-textured Ti2AlN(0001) films on SiO2 was characterized by in-situ and ex-situ X-ray scattering and Rutherford backscattering spectrometry. Ti2AlN was formed by solid-state reaction between sequentially deposited Ti and AlN layers. A deposition at 275 degrees C yields a Ti(0001) out-of-plane orientation which is maintained for the following AlN(0001)/Ti(0001) layers. Annealing to 600 degrees C yields AlN decomposition and diffusion of Al and N into Ti, with consecutive transformation into (TiAlN)-Al-3(111) and Ti2AlN(0001) plus AlN residuals. Despite preferred Ti2AlN(0001) out-of-plane orientation, the in-plane distribution is random, as expected from the self-organized pseudo-epitaxial growth.

  • 2.
    Beckers, Manfred
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
    Höglund, Carina
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
    Baehtz, Carsten
    Institute of Ion Beam Physics and Materials Research, Forschungszentrum Dresden-Rossendorf.
    Martins, R.M.S.
    Institute of Ion Beam Physics and Materials Research, Forschungszentrum Dresden-Rossendorf.
    Persson, Per O. Å.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
    Hultman, Lars
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
    Möller, W.
    Institute of Ion Beam Physics and Materials Research, Forschungszentrum Dresden-Rossendorf.
    The influence of substrate temperature and Al mobility on the microstructural evolution of magnetron sputtered ternary Ti-Al-N thin films2009Ingår i: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 106, nr 6, s. 064915-Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Ternary Ti-Al-N films were deposited onto Al2O3 (0001) substrates by reactive co‑sputtering from elemental Ti and Al targets and analyzed by in situ and ex situ x-ray scattering, Rutherford backscattering spectroscopy, transmission electron microscopy and x-ray photoemission spectroscopy. The deposition parameters were set to values that yield Ti:Al:N ratios of 2:1:1 and 4:1:3 at room temperature. 2TiAlN depositions at 675 °C result in epitaxial Ti2AlN growth with basal planes parallel to the substrate surface. Nominal 4TiAl3N depositions at 675 °C and above, however, yield TiN and Ti2AlN domains due to Al loss to the vacuum. Depositions at a lower temperature of 600 °C yield films with correct 4:1:3 stoichiometry, but Ti4AlN3 formation is supposedly prevented by insufficient adatom mobility. Instead, an incoherent Tin+1AlNn structure with random twinned stacking sequences n is obtained, that exhibits both basal plane orientations parallel as well as nearly perpendicular to the substrate interface. X‑ray photoemission spectroscopy shows that in contrast to stoichiometric nitrides the Al is metallically bonded and hence acts as twinning plane within the Tin+1AlNn stackings. Domains with perpendicular basal plane orientation overgrowth those with parallel ones in a competitive growth mode. The resulting morphology is a combination of smooth‑surfaced parallel basal plane orientation domains interrupted by repeated facetted hillock-like features with perpendicular basal plane orientation.

  • 3.
    Darakchieva, Vanya
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska högskolan.
    Beckers, Manfred
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik.
    Hultman, Lars
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik.
    Xie, Mengyao
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska högskolan.
    Monemar, Bo
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska högskolan.
    Carlin, J.-F
    Grandjean, N.
    Strain and compositional analyzes of Al-rich Al1-xInxN alloys grown by MOVPE: impact on the applicability of Vegard's rule2008Ingår i: Physica Status Solidi (C) Current Topics in Solid State Physics, 2008, s. 1859-1862Konferensbidrag (Refereegranskat)
    Abstract [en]

    We have studied composition and strain in Al1–xInxN films with 0.128 x 0.22 grown on GaN-buffered sapphire substrates by metalorganic vapor phase epitaxy. A good agreement between the In contents determined by Rutherford backscattering spectrometry (RBS) and Xray diffraction (XRD) is found for x 18, suggesting applicability of Vegard's rule in the narrow compositional range around the lattice matching to GaN. The increase of the In content up to x = 0.22 leads to a formation of sub-layers with a higher composition, accompanied by deviations from Vegard's rule. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

  • 4.
    Darakchieva, Vanya
    et al.
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial.
    Beckers, Manfred
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik.
    Xie, Mengyao
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska högskolan.
    Hultman, Lars
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik.
    Monemar, Bo
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska högskolan.
    Carlin, J-. F.
    Feltin, E.
    Gonschorek, M.
    Grandjean, N.
    Effects of strain and composition on the lattice parameters and applicability of Vegard's rule in Al-rich Al1-x Inx N films grown on sapphire2008Ingår i: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 103, nr 10, s. 103513-Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    The lattice parameters and strain evolution in Al1-x In x N films with 0.07≤x≤0.22 grown on GaN-buffered sapphire substrates by metal organic vapor phase epitaxy have been studied by reciprocal space mapping. Decoupling of compositional effects on the strain determination was accomplished by measuring the In contents in the films both by Rutherford backscattering spectrometry (RBS) and x-ray diffraction (XRD). Differences between XRD and RBS In contents are discussed in terms of compositions and biaxial strain in the films. It is suggested that strain plays an important role for the observed deviation from Vegard's rule in the case of pseudomorphic films. On the other hand, a good agreement between the In contents determined by XRD and RBS is found for Al1-x Inx N films with low degree of strain or partially relaxed, suggesting applicability of Vegard's rule in the narrow compositional range around the lattice matching to GaN. © 2008 American Institute of Physics.

  • 5.
    Eklund, Per
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
    Beckers, Manfred
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
    Frodelius, Jenny
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
    Högberg, Hans
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
    Hultman, Lars
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
    Magnetron sputtering of Ti3SiC2 thin films from a Ti3SiC2 compound target2007Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, ISSN 0734-2101, E-ISSN 1520-8559, Vol. 25, nr 5, s. 1381-1388Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Ti3 Si C2 thin films were synthesized by magnetron sputtering from Ti3 Si C2 and Ti targets. Sputtering from a Ti3 Si C2 target alone resulted in films with a C content of ∼50 at. % or more, due to gas-phase scattering processes and differences in angular and energy distributions between species ejected from the target. Addition of Ti to the deposition flux from a Ti3 Si C2 target is shown to bind the excess C in Ti Cx intergrown with Ti3 Si C2 and Ti4 Si C3. Additionally, a substoichiometric Ti Cx buffer layer is shown to serve as a C sink and enable the growth of Ti3 Si C2.

  • 6.
    Eklund, Per
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
    Beckers, Manfred
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
    Jansson, Ulf
    Uppsala University.
    Högberg, Hans
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
    Hultman, Lars
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
    The M(n+1)AX(n) phases: Materials science and thin-film processing2010Ingår i: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 518, nr 8, s. 1851-1878Artikel, forskningsöversikt (Refereegranskat)
    Abstract [en]

    This article is a Critical review of the M(n + 1)AX(n) phases ("MAX phases", where n = 1, 2, or 3) from a materials science perspective. MAX phases are a class of hexagonal-structure ternary carbides and nitrides ("X") of a transition metal ("M") and an A-group element. The most well known are Ti2AlC, Ti3SiC2, and Ti4AlN3. There are similar to 60 MAX phases with at least 9 discovered in the last five years alone. What makes the MAX phases fascinating and potentially useful is their remarkable combination of chemical, physical, electrical, and mechanical properties, which in many ways combine the characteristics of metals and ceramics. For example, MAX phases are typically resistant to oxidation and corrosion, elastically stiff, but at the same time they exhibit high thermal and electrical conductivities and are machinable. These properties stem from an inherently nanolaminated crystal structure, with M1 + nXn slabs intercalated with pure A-element layers. The research on MAX phases has been accelerated by the introduction of thin-film processing methods. Magnetron sputtering and arc deposition have been employed to synthesize single-crystal material by epitaxial growth, which enables studies of fundamental material properties. However, the surface-initiated decomposition of M(n + 1)AX(n) thin films into MX compounds at temperatures of 1000-1100 degrees C is much lower than the decomposition temperatures typically reported for the corresponding bulk material. We also review the prospects for low-temperature synthesis, which is essential for deposition of MAX phases onto technologically important substrates. While deposition of MAX phases from the archetypical Ti-Si-C and Ti-Al-N systems typically requires synthesis temperatures of similar to 800 degrees C, recent results have demonstrated that V2GeC and Cr2AlC can be deposited at similar to 450 degrees C. Also, thermal spray of Ti2AlC powder has been used to produce thick coatings. We further treat progress in the use of first-principle calculations for predicting hypothetical MAX phases and their properties. Together with advances in processing and materials analysis, this progress has led to recent discoveries of numerous new MAX phases such as Ti4SiC3, Ta4AlC3. and Ti3SnC2. Finally, important future research directions are discussed. These include charting the unknown regions in phase diagrams to discover new equilibrium and metastable phases, as well as research challenges in understanding their physical properties, such as the effects of anisotropy, impurities, and vacancies on the electrical properties, and unexplored properties such as Superconductivity, magnetism, and optics.

  • 7.
    Flink, Axel
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
    Beckers, Manfred
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
    Sjolen, Jacob
    Seco Tools AB.
    Larsson, Tommy
    Seco Tools AB.
    Braun, Slawomir
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Ytors Fysik och Kemi. Linköpings universitet, Tekniska högskolan.
    Karlsson, Lennart
    Seco Tools AB.
    Hultman, Lars
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
    The location and effects of Si in (Ti1-xSix)N-y thin films2009Ingår i: JOURNAL OF MATERIALS RESEARCH, ISSN 0884-2914, Vol. 24, nr 8, s. 2483-2498Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    (Ti1-xSix)N-y (0 andlt;= x andlt;= 0.20; 0.99 andlt;= y(x) andlt;= 1.13) thin films deposited by arc evaporation have been investigated by analytical transmission electron microscopy, x-ray diffraction, x-ray photoelectron spectroscopy, and nanoindentation. Films with x andlt;= 0.09 are single-phase cubic (Ti,Si)N solid solutions with a dense columnar microstructure. Films with x andgt; 0.09 haven a featherlike microstructure consisting of cubic TiN:Si nanocrystallite bundles separated by metastable SiNz with coherent-to-semicoherent interfaces and a dislocation density of as much as 10(14) cm(-2) is present. The films exhibit retained composition and hardness between 31 and 42 GPa in annealing experiments to 1000 degrees C due to segregation of SiN, to the grain boundaries. During annealing at 1100-1200 degrees C, this tissue phase thickens and transforms to amorphous SiNz. At the same time, Si and N diffuse out of the films via the grain boundaries and TiN recrystallize.

  • 8.
    Frodelius, Jenny
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
    Eklund, Per
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
    Beckers, Manfred
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
    Persson, Per
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
    Högberg, Hans
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
    Hultman, Lars
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
    Sputter deposition from a Ti2AlC target: Process characterization and conditions for growth of Ti2AlC2010Ingår i: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 518, nr 6, s. 1621-1626Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Sputter deposition from a Ti2AlC target was found to yield Ti-Al-C films with a composition that deviates from the target composition of 2:1:1. For increasing substrate temperature from ambient to 1000 degrees C, the Al content decreased from 22 at.% to 5 at.%, due to re-evaporation. The C content in as-deposited films was equal to or higher than the Ti content. Mass spectrometry of the plasma revealed that the Ti and Al species were essentially thermalized, while a large fraction of C with energies andgt;4 eV was detected. Co-sputtering with Ti yielded a film stoichiometry of 2:0.8:0.9 for Ti:Al:C, which enabled growth of Ti2AlC. These results indicate that an additional Ti flux balances the excess C and therefore provides for more stoichiometric Ti2AlC synthesis conditions.

  • 9.
    Ghafoor, Naureen
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
    Eriksson, Fredrik
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
    Mikhaylushkin, Arkady
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Teoretisk Fysik. Linköpings universitet, Tekniska högskolan.
    Abrikosov, Igor
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Teoretisk Fysik. Linköpings universitet, Tekniska högskolan.
    Gullikson, Eric M.
    Beckers, Manfred
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
    Kressing, U.
    Hultman, Lars
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
    Birch, Jens
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
    Effects of O and N impurities on the nanostructural evolution during growth of Cr/Sc multilayers2009Ingår i: Journal of Materials Research, ISSN 0884-2914, E-ISSN 2044-5326, Vol. 24, nr 1, s. 79-95Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Transition metal multilayers are prime candidates for high reflectivity soft x-ray multilayer mirrors. In particular, Cr/Sc multilayers in the amorphous state have proven to give the highest reflectivity in the water window. We have investigated the influence of impurities N and O as residual gas elements on the growth, structure, and optical performance of Cr/Sc multilayers deposited in high vacuum conditions by a dual cathode direct current magnetron sputter deposition. Multilayer structures with the modulation periods in the range of 0.9–4.5 nm and Cr layer to bilayer thickness ratios in the range of 0.17–0.83 were deposited with an intentionally raised base pressure (pB), ranging from 2 × 10-7 to 2 × 10-5 Torr. Compositional depth profiles were obtained by elastic recoil detection analysis and Rutherford backscattering spectroscopy, while the structural investigations of the multilayers were carried out using hard x-ray reflectivity and transmission electron microscopy. By investigating stacked multilayers, i.e., several multilayers with different designs of the modulation periods, stacked on top of each other in the samples, we have been able to conclude that both N and O are incorporated preferentially in the interior of the Sc layers. At pB = 2 × 10-6 Torr, typically <3 at.% of N and <1.5 at.% of O was found, which did not influence the amorphous nanostructure of the layers. Multilayers deposited with a high pB ~2 × 10-5 Torr, a N content as high as ~37 at.% was measured by elastic recoil detection analysis. These multilayers mainly consist of understoichiometric face-centered cubic CrN x /ScN y nanocrystalline layers, which could be grown as thin at 0.3 nm and is explained by a stabilizing effect on the ScN y layers during growth. It is also shown that by adding a background pressure of as little as 5 × 10-6 Torr of pure N2 the soft x-ray reflectivity (? = 3.11 nm) can be enhanced by more than 100% by N incorporation into the multilayer structures, whereas pure O2 at the same background pressure had no effect.

  • 10.
    Höglund, Carina
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
    Alling, Björn
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Teoretisk Fysik. Linköpings universitet, Tekniska högskolan.
    Birch, Jens
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
    Beckers, Manfred
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
    Persson, Per O. Å.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
    Baehtz, Carsten
    Structural Diagnostics Division, Institute of Ion Beam Physics and Materials Research, Forschungszentrum Dresden-Rossendorf e.V., P.O. Box 510119, D-01314 Dresden, Germany.
    Czigány, Zsolt
    Research Institute for Technical Physics and Materials Science, Hungarian Academy of Sciences, P.O. Box 49, H-1525 Budapest, Hungary.
    Jensen, Jens
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
    Hultman, Lars
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
    Effects of volume mismatch and electronic structure on the decomposition of ScAlN and TiAlN solid solutions2010Ingår i: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 81, nr 22, s. 224101-Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Thin solid films of metastable rocksalt structure (c-) Sc1-xAlxN and Ti1-xAlxN were employed as model systems to investigate the relative influence of volume mismatch and electronic structure driving forces for phase separation. Reactive dual magnetron sputtering was used to deposit stoichiometric Sc0.57Al0.43N(111) and Ti0.51Al0.49N(111) thin films, at 675 °C and 600 °C, respectively, followed by stepwise annealing to a maximum temperature of 1100 °C. Phase transformations during growth and annealing were followed in situ using X-ray scattering. The results show that the as-deposited Sc0.57Al0.43N films phase separate at 1000 °C – 1100 °C into non-isostructural c-ScN and wurtzite-structure (w-) AlN, via nucleation and growth at domain boundaries. Ti0.51Al0.49N, however, exhibits spinodal decomposition into isostructural coherent c-TiN and c-AlN, in the temperature interval of 800 °C – 1000 °C. X-ray pole figures show the coherency between c-ScN and w-AlN, with AlN(0001) || ScN(001) and AlN<01ɸ10> || ScN<1ɸ10>. First principles calculations of mixing energy-lattice spacing curves explain the results on a fundamental physics level and open a route for design of novel metastable pseudobinary phases for hard coatings and electronic materials.

  • 11.
    Höglund, Carina
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
    Beckers, Manfred
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
    Schell, Norbert
    GKSS Research Center Geesthacht.
    Borany, J.v.
    Institute of Ion Beam Physics and Materials Research, Forschungszentrum Dresen-Rossendorf.
    Birch, Jens
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
    Hultman, Lars
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
    Topotaxial growth of Ti2AlN by solid state reaction in AlN/Ti(0001) multilayer thin films2007Ingår i: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 90, nr 174106Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    The formation of Ti2AlN by solid state reaction between layers of wurtzite-AlN and α-Ti was characterized by in situ x-ray scattering. The sequential deposition of these layers by dual magnetron sputtering onto Al2O3(0001) at 200 °C yielded smooth, heteroepitaxial (0001) oriented films, with abrupt AlN/Ti interfaces as shown by x-ray reflectivity and Rutherford backscattering spectroscopy. Annealing at 400 °C led to AlN decomposition and diffusion of released Al and N into the Ti layers, with formation of Ti3AlN. Further annealing at 500 °C resulted in a phase transformation into Ti2AlN(0001) after only 5 min.

  • 12.
    Höglund, Carina
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
    Birch, Jens
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
    Beckers, Manfred
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
    Alling, Björn
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Beräkningsfysik. Linköpings universitet, Tekniska högskolan.
    Czigany, Zsolt
    Research Institute for Technical Physics and Materials Science, Hungarian Academy of Sciences, P.O. Box 49, H-1525 Budapest, Hungary .
    Mücklich, Arndt
    Institute of Ion Beam Physics and Materials Research, Forschungszentrum Dresden-Rossendorf.
    Hultman, Lars
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
    Sc3AlN: A New Perovskite2008Ingår i: European Journal of Inorganic Chemistry, ISSN 1434-1948, E-ISSN 1099-1948, Vol. 2008, nr 8, s. 1193-1195Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Sc3AlN with perovskite structure has been synthesized as the first ternary phase in the Sc–Al–N system. Magnetron sputter epitaxy at 650 °C was used to grow single-crystal, stoichiometric Sc3AlN(111) thin films onto MgO(111) substrates with ScN(111) seed layers as shown by elastic recoil detection analysis, X-ray diffraction, and transmission electron microscopy. The Sc3AlN phase has a lattice parameter of 4.40 Å, which is in good agreement with the theoretically predicted 4.42 Å. Comparisons of total formation energies show that Sc3AlN is thermodynamically stable with respect to all known binary compounds. Sc3AlN(111) films of 1.75 μm thickness exhibit a nanoindentation hardness of 14.2 GPa, an elastic modulus of 249 GPa, and a roomtemperature electrical resistivity of 41.2 μΩ cm.

  • 13.
    Lauridsen, Jonas
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
    Eklund, Per
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
    Joelsson, T.
    Impact Coatings AB.
    Ljungcrantz, H.
    Impact Coatings AB.
    Öberg, Å.
    ABB Corporate Research.
    Lewin, E.
    Uppsala University, Sweden.
    Jansson, U.
    Uppsala University, Sweden.
    Beckers, Manfred
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
    Högberg, Hans
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
    Hultman, Lars
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
    High-rate deposition of amorphous and nanocomposite Ti-Si-C multifunctional coatings2010Ingår i: Surface & Coatings Technology, ISSN 0257-8972, E-ISSN 1879-3347, Vol. 205, nr 2, s. 299-305Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Amorphous (a) and nanocomposite Ti–Si–C coatings were deposited at rates up to 16 μm/h by direct current magnetron sputtering from a Ti3SiC2 compound target, using an industrial pilot-plant system, onto high-speed steel, Si, and SiO2 substrates as well as Ni-plated Cu cylinders, kept at a temperature of 200 or 270 °C. Electron microscopy, X-ray photoelectron spectroscopy, and X-ray diffraction analyses showed that TiC/a-C/a-SiC nanocomposites were formed consisting of textured TiC nanocrystallites (nc) embedded in a matrix of a-C and a-SiC. Elastic recoil detection analysis showed that coatings deposited at a target-to-substrate distance of 2 cm and an Ar pressure of 10 mTorr have a composition close to that of the Ti3SiC2 compound target, as explained by ballistic transport of the species. Increased target-to-substrate distance from 2 cm to 8 cm resulted in a higher carbon-to-titanium ratio in the coatings than for the Ti3SiC2 compound target, due to different gas-phase scattering properties between the sputtered species. The coating microstructure could be modified from nanocrystalline to predominantly amorphous by changing the pressure and target-to-substrate conditions to 4 mTorr and 2 cm, respectively. A decreased pressure from 10 mTorr to 4 or 2 mTorr at a target-to-substrate distance of 2 cm decreased the deposition rate up to a factor of ~7 as explained by resputtering and an increase in the plasma sheath thickness. The coatings exhibited electrical resistivity in the range 160–800 μΩ cm, contact resistance down to 0.8 mΩ at a contact force of 40 N, and nanoindentation hardness in the range of 6–38 GPa.

  • 14. Söderberg, Hans
    et al.
    Flink, Axel
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
    Birch, Jens
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
    Persson, Per
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
    Beckers, Manfred
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
    Hultman, Lars
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
    Odén, Magnus
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Nanostrukturerade material. Linköpings universitet, Tekniska högskolan.
    Growth and characterization of TiN/SiN(001) superlattice films2007Ingår i: Journal of Materials Research, ISSN 0884-2914, E-ISSN 2044-5326, Vol. 22, nr 11, s. 3255-3264Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    We report the layer structure and composition in recently discovered TiN/SiN(001) superlattices deposited by dual-reactive magnetron sputtering on MgO(001) substrates. High-resolution transmission electron microscopy combined with Z-contrast scanning transmission electron microscopy, x-ray reflection, diffraction, and reciprocal-space mapping shows the formation of high-quality superlattices with coherently strained cubic TiN and SiN layers for SiN thickness below 7–10 Å. For increasing SiN layer thicknesses, a transformation from epitaxial to amorphous SiNx (x ? 1) occurs during growth. Elastic recoil detection analysis revealed an increase in nitrogen and argon content in SiNx layers during the phase transformation. The oxygen, carbon, and hydrogen contents in the multilayers were around the detection limit (~0.1 at.%) with no indication of segregation to the layer interfaces. Nanoindentation experiments confirmed superlattice hardening in the films. The highest hardness of 40.4 ± 0.8 GPa was obtained for 20-Å TiN with 5-Å-thick SiN(001) interlayers, compared to monolithic TiN at 20.2 ± 0.9 GPa.

  • 15.
    Willmann, Herbert
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
    Beckers, Manfred
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
    Birch, Jens
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
    Mayrhofer, P.H.
    Department of Physical Metallurgy and Materials Testing, University of Leoben.
    Mitterer, C.
    University of Leoben.
    Hultman, Lars
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
    Epitaxial growth of Al-Cr-N thin films on MgO(111)2008Ingår i: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 517, nr 2, s. 598-602Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Cubic rock salt structure Al0.60Cr0.40N and Al0.68Cr0.32N films of different thicknesses were grown epitaxially onto MgO(111) substrates by reactive unbalanced magnetron sputtering at 500°C. Rutherford backscattering spectroscopy reveals stoichiometric nitrides with Al/Cr ratios close to the ones of the used compound targets of 60/40 and 70/30. High resolution x-ray diffraction proves epitaxial growth over the whole film thickness up to thicknesses of ~1.8 µm. Reciprocal space maps and selected area electron diffraction show that the AlxCr1-xN films grow fully relaxed. Scanning and transmission electron microscopy imaging reveals columnar microstructures with column widths between 12–16 nm and {001} surface faceting on individual columns. The fully relaxed growth and the columnar structure can be attributed to limited ad‑atom mobility on the initial AlxCr1-xN(111) growth surface.

  • 16.
    Willmann, Herbert
    et al.
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik.
    Beckers, Manfred
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi.
    Giuliani, Finn
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi.
    Birch, Jens
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik.
    Mayrhofer, P.H.
    Department of Physical Metallurgy and Materials Testing, University of Leoben, 8700 Leoben, Austria.
    Mitterer, C.
    Department of Physical Metallurgy and Materials Testing, University of Leoben, 8700 Leoben, Austria.
    Hultman, Lars
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik.
    Single-crystal growth of NaCl-structure Al-Cr-N thin films on MgO(0 0 1) by magnetron sputter epitaxy2007Ingår i: Scripta Materialia, ISSN 1359-6462, E-ISSN 1872-8456, Vol. 57, nr 12, s. 1089-1092Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Single-crystal NaCl-structure Al0.68Cr0.32N thin films were deposited onto MgO(0 0 1) substrates. The films exhibit cube-on-cube epitaxial growth with an initial pseudomorphic strained layer before complete relaxation into an isotropic lattice parameter of 4.119 Å as shown by symmetric high-resolution X-ray diffraction and asymmetric reciprocal space maps. The relaxation proceeds via a threading dislocation network as revealed by transmission electron microscopy. Films of 900 nm thickness have a hardness of 32.4 ± 0.5 GPa, an elastic modulus of 460.8 ± 5 GPa, and a room-temperature resistivity of 2.7 × 103 O cm as determined by nanoindentation and four-point probe measurements, respectively. © 2007 Acta Materialia Inc.

  • 17.
    Yazdi, Gholamreza
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Materiefysik. Linköpings universitet, Tekniska högskolan.
    Beckers, Manfred
    Linköpings universitet, Institutionen för fysik, kemi och biologi. Linköpings universitet, Tekniska högskolan.
    Giuliani, Finn
    Linköpings universitet, Institutionen för fysik, kemi och biologi. Linköpings universitet, Tekniska högskolan.
    Syväjärvi, Mikael
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Materiefysik. Linköpings universitet, Tekniska högskolan.
    Hultman, Lars
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
    Yakimova, Rositsa
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Materiefysik. Linköpings universitet, Tekniska högskolan.
    Freestanding AlN single crystals enabled by self-organization of 2H-SiC pyramids on 4H-SiC substrates2009Ingår i: APPLIED PHYSICS LETTERS, ISSN 0003-6951, Vol. 94, nr 8, s. 082109-Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    A sublimation-recondensation process is presented for high quality AlN (0001) crystals at a high growth rate by employing 4H-SiC substrates with a predeposited epilayer. It is based on the coalescence of well oriented AlN microrods, which evolve from the apex of 2H-SiC pyramids grown out of hexagonal pits formed by thermal etching of the substrate during a temperature ramp up. This process yields stress-free 120-mu m-thick AlN single crystals with a dislocation density as low as 2x10(6) cm(-2).

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