liu.seSearch for publications in DiVA
Change search
Refine search result
1 - 37 of 37
CiteExportLink to result list
Permanent link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Rows per page
  • 5
  • 10
  • 20
  • 50
  • 100
  • 250
Sort
  • Standard (Relevance)
  • Author A-Ö
  • Author Ö-A
  • Title A-Ö
  • Title Ö-A
  • Publication type A-Ö
  • Publication type Ö-A
  • Issued (Oldest first)
  • Issued (Newest first)
  • Created (Oldest first)
  • Created (Newest first)
  • Last updated (Oldest first)
  • Last updated (Newest first)
  • Disputation date (earliest first)
  • Disputation date (latest first)
  • Standard (Relevance)
  • Author A-Ö
  • Author Ö-A
  • Title A-Ö
  • Title Ö-A
  • Publication type A-Ö
  • Publication type Ö-A
  • Issued (Oldest first)
  • Issued (Newest first)
  • Created (Oldest first)
  • Created (Newest first)
  • Last updated (Oldest first)
  • Last updated (Newest first)
  • Disputation date (earliest first)
  • Disputation date (latest first)
Select
The maximal number of hits you can export is 250. When you want to export more records please use the Create feeds function.
  • 1.
    Andersson, Stefan
    Linköping University, The Institute of Technology. Linköping University, Department of Electrical Engineering, Electronic Devices.
    Digital integrated circuits - Manchester carry-chain adder.2003Other (Other (popular science, discussion, etc.))
  • 2.
    Andersson, Stefan
    Linköping University, Department of Electrical Engineering, Electronic Devices. Linköping University, The Institute of Technology.
    Multiband LNA Design and RF-Sampling Front-Ends for Flexible Wireless Receivers2006Doctoral thesis, comprehensive summary (Other academic)
    Abstract [en]

    The wireless market is developing very fast today with a steadily increasing number of users all around the world. An increasing number of users and the constant need for higher and higher data rates have led to an increasing number of emerging wireless communication standards. As a result there is a huge demand for flexible and low-cost radio architectures for portable applications. Moving towards multistandard radio, a high level of integration becomes a necessity and can only be accomplished by new improved radio architectures and full utilization of technology scaling. Modern nanometer CMOS technologies have the required performance for making high-performance RF circuits together with advanced digital signal processing. This is necessary for the development of low-cost highly integrated multistandard radios. The ultimate solution for the future is a software-defined radio, where a single hardware is used that can be reconfigured by software to handle any standard. Direct analog-to-digital conversion could be used for that purpose, but is not yet feasible due to the extremely tough requirements that put on the analog-to-digital converter (ADC). Meanwhile, the goal is to create radios that are as flexible as possible with today’s technology. The key to success is to have an RF front-end architecture that is flexible enough without putting too tough requirements on the ADC.

    One of the key components in such a radio front-end is a multiband multistandard low-noise amplifier (LNA). The LNA must be capable of handling several carrier frequencies within a large bandwidth. Therefore it is not possible to optimize the circuit performance for just one frequency band as can be done for a single application LNA. Two different circuit topologies that are suitable for multiband multistandard LNAs have been investigated, implemented, and measured. Those two LNA topologies are: (i) wideband LNAs that cover all the frequency bands of interest (ii) tunable narrowband LNAs that are tunable over a wide range of frequency bands.

    Before analog-to-digital conversion the RF signal has to be downconverted to a frequency manageable by the analog-to-digital converter. Recently the concept of direct sampling of the RF signal and discrete-time signal processing before analog-to-digital conversion has drawn a lot of attention. Today’s CMOS technologies demonstrate very high speeds, making the RF-sampling technique appealing in a context of multistandard operation at GHz frequencies. In this thesis the concept of RF sampling and decimation is used to implement a flexible RF front-end, where the RF signal is sampled and downconverted to baseband frequency. A discrete-time switched-capacitor filter is used for filtering and decimation in order to decrease the sample rate from a value close to the carrier frequency to a value suitable for analog-to-digital conversion. To demonstrate the feasibility of this approach an RF-sampling front-end primarily intended for WLAN has been implemented in a 0.13 μm CMOS process.

    List of papers
    1. A Tuned, Inductorless, Recursive Filter LNA in CMOS
    Open this publication in new window or tab >>A Tuned, Inductorless, Recursive Filter LNA in CMOS
    2002 (English)In: Proceedings of the European Solid-State Circuit Conference (ESSCIRC), Florens, Italy, September, 2002, p. 351-354Conference paper, Published paper (Refereed)
    Abstract [en]

    An active recursive filter approach is proposed for the implementation of an inductorless, tuned LNA in CMOS. Such an LNA was designed and fabricated ina 0.8 μm CMOS process. In simulation, the feasibility of this type of LNA was demonstrated, and reasonably good performance was obtained. The fabricated device shows a center frequency tuning range from 250 MHz to 975 MHz. Gain and Q value are tunable in a wide range. The LNA exhibits an input referred 1 dB compression point of -31 dB m and a noise figure of approximately 3 dB measured at 900 MHz center frequency.

    National Category
    Engineering and Technology
    Identifiers
    urn:nbn:se:liu:diva-14084 (URN)
    Conference
    28th European Solid-State Circuit Conference (ESSCIRC). Firenze, Italy, September 24-26, 2002.
    Available from: 2006-10-16 Created: 2006-10-16 Last updated: 2013-10-31
    2. An Active Recursive RF Filter in 0.35 μm BiCMOS
    Open this publication in new window or tab >>An Active Recursive RF Filter in 0.35 μm BiCMOS
    2005 (English)In: Journal of Analog Integrated Circuits and Signal Processing, ISSN 0925-1030, Vol. 44, no 3, p. 213-218Article in journal (Refereed) Published
    Abstract [en]

    An active recursive filter approach is proposed for the implementaion of an inductorless, tuneable RF filter in BiCMOS. A test circuit was designed and manufactured in a 0.35 μm SiGe BiCMOS technology. In simulations, the feasibility of this type of filter was demonstrated and reasonably good performance was obtained. The simulations show a center frequency tuning range from 6 to 9.4 GHz and a noise figure of 8.8 to 10.4 dB depending on center frequency. Gain and Q-value are tunable in a wide range. Simulated IIP-3 and 1-dB compression point is −26 and −34 dBm respectively, simulated at the center frequency 8.5 GHz and with 15 dB gain. Measurements on the fabricated device shows a center frequency tuning range from 6.6 to 10 GHz, i.e. slightly higher center frequencies were measured than the simulated.

    Keywords
    active filter, tuneable recursive filter for multicarrier systems, inductorless RF filter, tuneable gain and Q
    National Category
    Engineering and Technology
    Identifiers
    urn:nbn:se:liu:diva-14085 (URN)10.1007/s10470-005-3002-2 (DOI)
    Available from: 2006-10-16 Created: 2006-10-16 Last updated: 2013-10-31
    3. A 750 MHz to 3 GHz Tunable Narrowband Low-Noise Amplifier
    Open this publication in new window or tab >>A 750 MHz to 3 GHz Tunable Narrowband Low-Noise Amplifier
    2005 (English)In: Proceedings of the Norchip 2005 Conference, Oulu, Finland, 2005, p. 8-11Conference paper, Published paper (Refereed)
    Abstract [en]

    An active recursive filter approach is proposed for the implementation of an inductorless, tunable LNA in CMOS. A test circuit was designed and manufactured in a 0.18 μm CMOS technology. The feasibility of this type of LNA was demonstrated in both simulations and measurements and reasonably good performance was obtained. The measurements show a center frequency tuning range from 0.75-3 GHz and a minimum noise figure of 4.8 dB. Gain and Q value are also tunable in a wide range. Measured IIP-3 and 1-dB compression point is -24 dBm and -29.5 dBm respectively, measured at the center frequency 1.7 GHz and with 21 dB gain.

    Keywords
    CMOS integrated circuits, UHF amplifiers, active filters, circuit tuning, integrated circuit design, low noise amplifiers, recursive filters, CMOS technology, active recursive filter, inductorless low-noise amplifier, tunable narrowband low-noise amplifier
    National Category
    Engineering and Technology
    Identifiers
    urn:nbn:se:liu:diva-14086 (URN)10.1109/NORCHP.2005.1596976 (DOI)
    Available from: 2006-10-16 Created: 2006-10-16
    4. Wideband LNA for a Multistandard Wireless Receiver in 0.18 μm CMOS
    Open this publication in new window or tab >>Wideband LNA for a Multistandard Wireless Receiver in 0.18 μm CMOS
    2003 (English)In: Proceedings of the 29th European Solid-State Circuits Conference, 2003. ESSCIRC '03, 2003, p. 655-658Conference paper, Published paper (Refereed)
    Abstract [en]

    A differential wideband LNA for a multistandard receiver has been designed and implemented in 0.18μm CMOS. The circuit topology is a two-stage amplifier with active feedback. The input stage is a common-source stage with a common-drain stage in the feedback loop for impedance matching. Bandwidth enhancement with inductive shunt-peaking is used for maximizing the bandwidth. Measurements on the fabricated device show a power gain of 13.1 dB and a 3-dB bandwidth of nearly 7 GHz together with an IIP3 and a 1-dB compression point of -4.7 dBm and -15.2 dBm respectively. The measured noise figures are 3.3 dB at 1 GHz and 5.5 dB at 6 GHz. Reported LNAs with similar performance are usually implemented with bipolar transistors or MESFETs.

    Keywords
    CMOS integrated circuits, integrated circuit design, radio receivers, wideband amplifiers
    National Category
    Engineering and Technology
    Identifiers
    urn:nbn:se:liu:diva-14087 (URN)10.1109/ESSCIRC.2003.1257220 (DOI)0-7803-7995-0 (ISBN)
    Conference
    29th European Solid-State Circuits Conference, 2003. Estoril, Portugal, September 16-18.
    Available from: 2006-10-16 Created: 2006-10-16 Last updated: 2013-10-31
    5. Wideband LNA for aMultistandard RF-Sampling Front-End in 0.13 μm CMOS
    Open this publication in new window or tab >>Wideband LNA for aMultistandard RF-Sampling Front-End in 0.13 μm CMOS
    (English)Manuscript (Other academic)
    Abstract [en]

    The pad pitch of modern RF ICs is in order of few tens of micrometers. Connecting the large number of high speed I/Os to outside world with good signal fidelity and low cost is extremely challenging. To cope with this requirement, we need reflection-free transmission lines from on-chip pad to on-board SMA connectors. Such a transmission line is very hard to design due to the difference in on-chip and on-board feature size and the requirement for extremely large bandwidth. In this paper, we propose the use of narrow tracks close to chip and wide tracks away from the chip. This narrow to wide transition in width results in impedance discontinuity. A step change in substrate thickness is utilized to cancel the effect of the width discontinuity, thus achieving a reflection-free microstrip. To verify the concept several microstrips were designed on multilayer FR4 PCB without any additional manufacturing steps. The TDR measurements reveal that impedance variation is less then 3Ω for 50Ω microstrip when the width changes from 165μm to 940μm and substrate thickness changes from 100μm to 500μm. The Sparameter measurement on same microstrip shows S11 better then -9dB for the frequency range 1-6GHz

    National Category
    Engineering and Technology
    Identifiers
    urn:nbn:se:liu:diva-14088 (URN)
    Available from: 2006-10-16 Created: 2006-10-16 Last updated: 2018-10-08
    6. Channel length as a design parameter for low noise wideband LNAs in deep submicron CMOS technologies
    Open this publication in new window or tab >>Channel length as a design parameter for low noise wideband LNAs in deep submicron CMOS technologies
    2004 (English)In: Proceedings of the Norchip 2004 Conference, Oslo, Norway, November, 2004, p. 123-126Conference paper, Published paper (Refereed)
    Abstract [en]

    In this paper, measurements of drain thermal noise for three NMOS devices with different channel lengths was carried out. The three NMOS devices were all implemented in a 0.18 μm CMOS technology, with channel lengths 0.18. 0.36, and 0.72 μm, respectively. The result was then compared with simulated data using the BSIM3- model and parameters provided by the vendor Large discrepancies between measurements and simulations were observed. This work was done in order to understand how to utilize transistor length as a design parameter to achieve optimal noise gures for wideband LNAs in deep submicron technologies.

    Keywords
    CMOS, wideband LNAs
    National Category
    Engineering and Technology
    Identifiers
    urn:nbn:se:liu:diva-14089 (URN)10.1109/NORCHP.2004.1423838 (DOI)0-7803-8510-1 (ISBN)
    Available from: 2006-10-16 Created: 2006-10-16 Last updated: 2013-10-31
    7. SC Filter for RF Down Conversion with Wideband Image Rejection
    Open this publication in new window or tab >>SC Filter for RF Down Conversion with Wideband Image Rejection
    2006 (English)In: Proceedings of the ISCAS 2006 conference, Kos, Greece, 2006, p. 3542-3545Conference paper, Published paper (Refereed)
    Keywords
    SF filter, RF downconversion, RF sampling
    National Category
    Engineering and Technology
    Identifiers
    urn:nbn:se:liu:diva-14090 (URN)
    Available from: 2006-10-16 Created: 2006-10-16 Last updated: 2009-04-24
    8. SC Filter for RF Sampling and Downconversion with Wideband Image Rejection
    Open this publication in new window or tab >>SC Filter for RF Sampling and Downconversion with Wideband Image Rejection
    2006 (English)In: Journal of Analog Integrated Circuits and Signal Processing by Springer, special issue: MIXDES, ISSN 0925-1030, Vol. 49, no 2, p. 115-122Article in journal (Refereed) Published
    Abstract [en]

    In this paper we present an SC filter for RF downconversion using the direct RF sampling and decimation technique. The circuit architecture is generic and it features high image rejection for wideband signals and good linearity. An SC implementation in 0.13μm CMOS suitable for an RF of 2.4 GHz and 20 MHz signal bandwidth is presented as a demonstrator. Simulation results obtained using Cadence Spectre simulation tools are included.

    Keywords
    RF sampling, Decimation filter, SC filter, Wideband image rejection
    National Category
    Engineering and Technology
    Identifiers
    urn:nbn:se:liu:diva-14091 (URN)10.1007/s10470-006-7833-2 (DOI)
    Available from: 2006-10-16 Created: 2006-10-16
    9. Noise Analysis and Noise Estimation of an RF-Sampling Front-End using an SC Decimation Filter
    Open this publication in new window or tab >>Noise Analysis and Noise Estimation of an RF-Sampling Front-End using an SC Decimation Filter
    2006 (English)In: Proceedings of the MIXDES 2006 Conference, Gdynia, Poland, 2006, p. 343-348Conference paper, Published paper (Refereed)
    Keywords
    RF sampling, decimation, thermal- and 1/f-noise, SC filter
    National Category
    Engineering and Technology
    Identifiers
    urn:nbn:se:liu:diva-14092 (URN)
    Available from: 2006-10-16 Created: 2006-10-16 Last updated: 2009-04-24
    10. Multiband Direct RF-Sampling Receiver Front-End for WLAN in 0.13 μm CMOS
    Open this publication in new window or tab >>Multiband Direct RF-Sampling Receiver Front-End for WLAN in 0.13 μm CMOS
    (English)Manuscript (Other academic)
    Abstract [en]

    In this paper a flexible RF-sampling front-end primarily intended for WLAN operating in the 2.4 GHz and 5- 6 GHz bands is presented. The circuit is implemented in a 0.13 mum CMOS process with certain built-in test features. It consists of a wideband LNA and a SC discrete-time decimation filter used as a sampling IQ down-converter. The architecture is generic and scalable in frequency and it can operate at a sampling frequency up to 3 GHz and RF carrier up to 6 GHz. The decimation factor is 8 or 16 rendering the following A/D conversion feasible. The frequency response, linearity, and NF of the whole front-end have been measured. At the power consumption of 176 mW the circuit achieves specs that are satisfactory for WLAN applications.

    Identifiers
    urn:nbn:se:liu:diva-14093 (URN)10.1109/ECCTD.2007.4529563 (DOI)
    Available from: 2006-10-16 Created: 2006-10-16 Last updated: 2014-08-19
  • 3.
    Andersson, Stefan
    Linköping University, Department of Electrical Engineering, Electronic Devices. Linköping University, The Institute of Technology.
    New directions in RF LNA design2004Licentiate thesis, comprehensive summary (Other academic)
    Abstract [en]

    The RF field develops fast today and to meet the increasing needs from more and more users and higher and higher data rates for mobile terminals the number of wireless standards are rapidly increasing. This has lead to an increased number of frequency spectra dedicated for wireless communication, such as the recent ones for WCDMA, Bluetooth, and WLAN. Instead of using one RF front-end for each standard as done today, the need for multiband multistandard front-end receiver architectures will be large in the near future. This is a big step towards software defined radio. This single front-end approach will lead to more flexible receivers to a lower cost for the consumers. Multiband multistandard receivers need circuitry that can adapt to several RF-bands with very varying carrier frequencies and different requirements. For cost effectiveness there should also be a minimum of external components and on-chip passives.

    One of the most critical components in a multiband multistandard receiver, independent of the receiver architecture, is the low-noise amplifier (LNA). The LNA must be capable of handling several carrier frequencies within a large bandwidth. Therefore it is not possible to optimize the circuit performance for just one frequency band as can be done for a single application LNA. This makes the design task more difficult. Two different circuit topologies that are suitable for multi band multistandard LNAs are:

    • Wideband LNAs that cover the frequency bands of interest

    • Tunable narrowband LNAs, tunable over the frequency bands of interest

    The main focus of the research has been to develop suitable circuit techniques for such LNAs in silicon technologies (CMOS and BiCMOS) in the frequency range 1-10 GHz with a minimum of passives. Both wideband LNAs and tunable narrowband LNAs based on the principle of active recursive filters have been implemented in both CMOS and BiCMOS technologies.

    List of papers
    1. A Tuned, Inductorless, Recursive Filter LNA in CMOS
    Open this publication in new window or tab >>A Tuned, Inductorless, Recursive Filter LNA in CMOS
    2002 (English)In: Proceedings of the European Solid-State Circuit Conference (ESSCIRC), Florens, Italy, September, 2002, p. 351-354Conference paper, Published paper (Refereed)
    Abstract [en]

    An active recursive filter approach is proposed for the implementation of an inductorless, tuned LNA in CMOS. Such an LNA was designed and fabricated ina 0.8 μm CMOS process. In simulation, the feasibility of this type of LNA was demonstrated, and reasonably good performance was obtained. The fabricated device shows a center frequency tuning range from 250 MHz to 975 MHz. Gain and Q value are tunable in a wide range. The LNA exhibits an input referred 1 dB compression point of -31 dB m and a noise figure of approximately 3 dB measured at 900 MHz center frequency.

    National Category
    Engineering and Technology
    Identifiers
    urn:nbn:se:liu:diva-14084 (URN)
    Conference
    28th European Solid-State Circuit Conference (ESSCIRC). Firenze, Italy, September 24-26, 2002.
    Available from: 2006-10-16 Created: 2006-10-16 Last updated: 2013-10-31
    2. An Active Recursive RF Filter in 0.35 μm BiCMOS
    Open this publication in new window or tab >>An Active Recursive RF Filter in 0.35 μm BiCMOS
    2005 (English)In: Journal of Analog Integrated Circuits and Signal Processing, ISSN 0925-1030, Vol. 44, no 3, p. 213-218Article in journal (Refereed) Published
    Abstract [en]

    An active recursive filter approach is proposed for the implementaion of an inductorless, tuneable RF filter in BiCMOS. A test circuit was designed and manufactured in a 0.35 μm SiGe BiCMOS technology. In simulations, the feasibility of this type of filter was demonstrated and reasonably good performance was obtained. The simulations show a center frequency tuning range from 6 to 9.4 GHz and a noise figure of 8.8 to 10.4 dB depending on center frequency. Gain and Q-value are tunable in a wide range. Simulated IIP-3 and 1-dB compression point is −26 and −34 dBm respectively, simulated at the center frequency 8.5 GHz and with 15 dB gain. Measurements on the fabricated device shows a center frequency tuning range from 6.6 to 10 GHz, i.e. slightly higher center frequencies were measured than the simulated.

    Keywords
    active filter, tuneable recursive filter for multicarrier systems, inductorless RF filter, tuneable gain and Q
    National Category
    Engineering and Technology
    Identifiers
    urn:nbn:se:liu:diva-14085 (URN)10.1007/s10470-005-3002-2 (DOI)
    Available from: 2006-10-16 Created: 2006-10-16 Last updated: 2013-10-31
    3. Wideband LNA for a Multistandard Wireless Receiver in 0.18 μm CMOS
    Open this publication in new window or tab >>Wideband LNA for a Multistandard Wireless Receiver in 0.18 μm CMOS
    2003 (English)In: Proceedings of the 29th European Solid-State Circuits Conference, 2003. ESSCIRC '03, 2003, p. 655-658Conference paper, Published paper (Refereed)
    Abstract [en]

    A differential wideband LNA for a multistandard receiver has been designed and implemented in 0.18μm CMOS. The circuit topology is a two-stage amplifier with active feedback. The input stage is a common-source stage with a common-drain stage in the feedback loop for impedance matching. Bandwidth enhancement with inductive shunt-peaking is used for maximizing the bandwidth. Measurements on the fabricated device show a power gain of 13.1 dB and a 3-dB bandwidth of nearly 7 GHz together with an IIP3 and a 1-dB compression point of -4.7 dBm and -15.2 dBm respectively. The measured noise figures are 3.3 dB at 1 GHz and 5.5 dB at 6 GHz. Reported LNAs with similar performance are usually implemented with bipolar transistors or MESFETs.

    Keywords
    CMOS integrated circuits, integrated circuit design, radio receivers, wideband amplifiers
    National Category
    Engineering and Technology
    Identifiers
    urn:nbn:se:liu:diva-14087 (URN)10.1109/ESSCIRC.2003.1257220 (DOI)0-7803-7995-0 (ISBN)
    Conference
    29th European Solid-State Circuits Conference, 2003. Estoril, Portugal, September 16-18.
    Available from: 2006-10-16 Created: 2006-10-16 Last updated: 2013-10-31
    4. Channel length as a design parameter for low noise wideband LNAs in deep submicron CMOS technologies
    Open this publication in new window or tab >>Channel length as a design parameter for low noise wideband LNAs in deep submicron CMOS technologies
    2004 (English)In: Proceedings of the Norchip 2004 Conference, Oslo, Norway, November, 2004, p. 123-126Conference paper, Published paper (Refereed)
    Abstract [en]

    In this paper, measurements of drain thermal noise for three NMOS devices with different channel lengths was carried out. The three NMOS devices were all implemented in a 0.18 μm CMOS technology, with channel lengths 0.18. 0.36, and 0.72 μm, respectively. The result was then compared with simulated data using the BSIM3- model and parameters provided by the vendor Large discrepancies between measurements and simulations were observed. This work was done in order to understand how to utilize transistor length as a design parameter to achieve optimal noise gures for wideband LNAs in deep submicron technologies.

    Keywords
    CMOS, wideband LNAs
    National Category
    Engineering and Technology
    Identifiers
    urn:nbn:se:liu:diva-14089 (URN)10.1109/NORCHP.2004.1423838 (DOI)0-7803-8510-1 (ISBN)
    Available from: 2006-10-16 Created: 2006-10-16 Last updated: 2013-10-31
    5. On the excess thermal noise in short channel MOS transistors
    Open this publication in new window or tab >>On the excess thermal noise in short channel MOS transistors
    (English)Manuscript (preprint) (Other academic)
    Abstract [en]

    Drain noise current was measured at an extended temperature range on NMOS transistors of various length made in a 0.18 μm process. A comparison with theoretical noise models strongly indicates the mechanism of shot noise at low currents. We therefore suggest that the excess noise observed in short channel MOS transistors are due to shot noise, with an explanation borrowed from the theory of vacuum diodes.

    National Category
    Engineering and Technology
    Identifiers
    urn:nbn:se:liu:diva-100236 (URN)
    Available from: 2013-10-31 Created: 2013-10-31 Last updated: 2013-10-31
  • 4.
    Andersson, Stefan
    et al.
    Linköping University, The Institute of Technology. Linköping University, Department of Electrical Engineering, Electronic Devices.
    Caputa, Peter
    Linköping University, The Institute of Technology. Linköping University, Department of Electrical Engineering, Electronic Devices.
    Hansson, Martin
    Linköping University, The Institute of Technology. Linköping University, Department of Electrical Engineering, Electronic Devices.
    Alvandpour, Atila
    Linköping University, The Institute of Technology. Linköping University, Department of Electrical Engineering, Electronic Devices.
    TSEK 01, VLSI design projekt 20042003Other (Other (popular science, discussion, etc.))
  • 5.
    Andersson, Stefan
    et al.
    Linköping University, Department of Electrical Engineering, Electronic Devices. Linköping University, The Institute of Technology.
    Caputa, Peter
    Linköping University, Department of Electrical Engineering, Electronic Devices. Linköping University, The Institute of Technology.
    Svensson, Christer
    Linköping University, Department of Electrical Engineering, Electronic Devices. Linköping University, The Institute of Technology.
    A Tuned, Inductorless, Recursive Filter LNA in CMOS2002In: Proceedings of the European Solid-State Circuit Conference (ESSCIRC), Florens, Italy, September, 2002, p. 351-354Conference paper (Refereed)
    Abstract [en]

    An active recursive filter approach is proposed for the implementation of an inductorless, tuned LNA in CMOS. Such an LNA was designed and fabricated ina 0.8 μm CMOS process. In simulation, the feasibility of this type of LNA was demonstrated, and reasonably good performance was obtained. The fabricated device shows a center frequency tuning range from 250 MHz to 975 MHz. Gain and Q value are tunable in a wide range. The LNA exhibits an input referred 1 dB compression point of -31 dB m and a noise figure of approximately 3 dB measured at 900 MHz center frequency.

  • 6.
    Andersson, Stefan
    et al.
    Linköping University, The Institute of Technology. Linköping University, Department of Electrical Engineering, Electronic Devices.
    Carlsson, Ingvar
    EK-ISY Linköpings universitet.
    Natarajan, Sreedhar
    Linköping University, The Institute of Technology. Linköping University, Department of Electrical Engineering, Electronic Devices.
    Alvandpour, Atila
    Linköping University, The Institute of Technology. Linköping University, Department of Electrical Engineering, Electronic Devices.
    A 128Kb 5T SRAM in 0.18mm CMOS.2007In: International Conference on Memory Technology and Design ICMTD 2007,2007, 2007, p. 185-Conference paper (Refereed)
  • 7.
    Andersson, Stefan
    et al.
    Linköping University, The Institute of Technology. Linköping University, Department of Electrical Engineering, Electronic Devices.
    Konopacki, J
    Silesian university of technology Gliwice, Poland.
    Dabrowski, Jerzy
    Linköping University, The Institute of Technology. Linköping University, Department of Electrical Engineering, Electronic Devices.
    Svensson, Christer
    Linköping University, The Institute of Technology. Linköping University, Department of Electrical Engineering, Electronic Devices.
    RF-sampling mixer for zero-IF receiver with high image-rejection.2005In: Swedish System-on-Chip Conference,2005, 2005Conference paper (Other academic)
  • 8.
    Andersson, Stefan
    et al.
    Linköping University, The Institute of Technology. Linköping University, Department of Electrical Engineering, Electronic Devices.
    Konopacki, J.
    Silesian University of Technology, Poland.
    Dabrowski, Jerzy
    Linköping University, The Institute of Technology. Linköping University, Department of Electrical Engineering, Electronic Devices.
    Svensson, Christer
    Linköping University, The Institute of Technology. Linköping University, Department of Electrical Engineering, Electronic Devices.
    RF-sampling mixer for zero-IF receiver with high image-rejection.2005In: MIXDES 2005,2005, 2005, p. 185-188Conference paper (Refereed)
  • 9.
    Andersson, Stefan
    et al.
    Linköping University, Department of Electrical Engineering, Electronic Devices. Linköping University, The Institute of Technology.
    Konopacki, Jacek
    Institute of Electronics, Silesian University of Technology, Gliwice, Poland.
    Dabrowski, Jerzy
    Linköping University, Department of Electrical Engineering, Electronic Devices. Linköping University, The Institute of Technology.
    Svensson, Christer
    Linköping University, Department of Electrical Engineering, Electronic Devices. Linköping University, The Institute of Technology.
    Noise Analysis and Noise Estimation of an RF-Sampling Front-End using an SC Decimation Filter2006In: Proceedings of the MIXDES 2006 Conference, Gdynia, Poland, 2006, p. 343-348Conference paper (Refereed)
  • 10.
    Andersson, Stefan
    et al.
    Linköping University, Department of Electrical Engineering, Electronic Devices. Linköping University, The Institute of Technology.
    Konopacki, Jacek
    Institute of Electronics, Silesian University of Technology, Gliwice, Poland.
    Dabrowski, Jerzy
    Linköping University, Department of Electrical Engineering, Electronic Devices. Linköping University, The Institute of Technology.
    Svensson, Christer
    Linköping University, Department of Electrical Engineering, Electronic Devices. Linköping University, The Institute of Technology.
    SC Filter for RF Down Conversion with Wideband Image Rejection2006In: Proceedings of the ISCAS 2006 conference, Kos, Greece, 2006, p. 3542-3545Conference paper (Refereed)
  • 11.
    Andersson, Stefan
    et al.
    Linköping University, Department of Electrical Engineering, Electronic Devices. Linköping University, The Institute of Technology.
    Konopacki, Jacek
    Institute of Electronics, Silesian University of Technology, Gliwice, Poland.
    Dabrowski, Jerzy
    Linköping University, Department of Electrical Engineering, Electronic Devices. Linköping University, The Institute of Technology.
    Svensson, Christer
    Linköping University, Department of Electrical Engineering, Electronic Devices. Linköping University, The Institute of Technology.
    SC Filter for RF Sampling and Downconversion with Wideband Image Rejection2006In: Journal of Analog Integrated Circuits and Signal Processing by Springer, special issue: MIXDES, ISSN 0925-1030, Vol. 49, no 2, p. 115-122Article in journal (Refereed)
    Abstract [en]

    In this paper we present an SC filter for RF downconversion using the direct RF sampling and decimation technique. The circuit architecture is generic and it features high image rejection for wideband signals and good linearity. An SC implementation in 0.13μm CMOS suitable for an RF of 2.4 GHz and 20 MHz signal bandwidth is presented as a demonstrator. Simulation results obtained using Cadence Spectre simulation tools are included.

  • 12.
    Andersson, Stefan
    et al.
    Linköping University, The Institute of Technology. Linköping University, Department of Electrical Engineering, Electronic Devices.
    Rashad, Ramzan
    Linköping University, The Institute of Technology. Linköping University, Department of Electrical Engineering, Electronic Devices.
    Dabrowski, Jerzy
    Linköping University, The Institute of Technology. Linköping University, Department of Electrical Engineering, Electronic Devices.
    Svensson, Christer
    Linköping University, The Institute of Technology. Linköping University, Department of Electrical Engineering, Electronic Devices.
    Direct RF sampling receiver front-end for WLAN.2006In: Swedis system-on-chip conference,2006, Lund: Lunds universitet , 2006Conference paper (Refereed)
  • 13.
    Andersson, Stefan
    et al.
    Linköping University, The Institute of Technology. Linköping University, Department of Electrical Engineering, Electronic Devices.
    Rashad, Ramzan
    Linköping University, The Institute of Technology. Linköping University, Department of Electrical Engineering, Electronic Devices.
    Dabrowski, Jerzy
    Linköping University, The Institute of Technology. Linköping University, Department of Electrical Engineering, Electronic Devices.
    Svensson, Christer
    Linköping University, The Institute of Technology. Linköping University, Department of Electrical Engineering, Electronic Devices.
    Flexible direct RF-sampling receiver front-end in 0.13 um CMOS.2007In: Swedish System-on-Chip Conference SSoCC,2007, Göteborg: CTH , 2007Conference paper (Refereed)
    Abstract [en]

      

  • 14.
    Andersson, Stefan
    et al.
    Linköping University, The Institute of Technology. Linköping University, Department of Electrical Engineering, Electronic Devices.
    Svensson, Christer
    Linköping University, The Institute of Technology. Linköping University, Department of Electrical Engineering, Electronic Devices.
    10 GHz wideband low-noise amplifier using a 0,35um SiGe BiCMOS technology.2002In: SSoCC´02 confernce,2002, 2002Conference paper (Refereed)
  • 15.
    Andersson, Stefan
    et al.
    Linköping University, Department of Electrical Engineering, Electronic Devices. Linköping University, The Institute of Technology.
    Svensson, Christer
    Linköping University, Department of Electrical Engineering, Electronic Devices. Linköping University, The Institute of Technology.
    A 750 MHz to 3 GHz Tunable Narrowband Low-Noise Amplifier2005In: Proceedings of the Norchip 2005 Conference, Oulu, Finland, 2005, p. 8-11Conference paper (Refereed)
    Abstract [en]

    An active recursive filter approach is proposed for the implementation of an inductorless, tunable LNA in CMOS. A test circuit was designed and manufactured in a 0.18 μm CMOS technology. The feasibility of this type of LNA was demonstrated in both simulations and measurements and reasonably good performance was obtained. The measurements show a center frequency tuning range from 0.75-3 GHz and a minimum noise figure of 4.8 dB. Gain and Q value are also tunable in a wide range. Measured IIP-3 and 1-dB compression point is -24 dBm and -29.5 dBm respectively, measured at the center frequency 1.7 GHz and with 21 dB gain.

  • 16.
    Andersson, Stefan
    et al.
    Linköping University, The Institute of Technology. Linköping University, Department of Electrical Engineering, Electronic Devices.
    Svensson, Christer
    Linköping University, The Institute of Technology. Linköping University, Department of Electrical Engineering, Electronic Devices.
    A widely tunable narrowband low-noise amplifier.2005In: RadioVetenskap och Kommunikation,2005, 2005, p. 501-504Conference paper (Refereed)
  • 17.
    Andersson, Stefan
    et al.
    Linköping University, The Institute of Technology. Linköping University, Department of Electrical Engineering, Electronic Devices.
    Svensson, Christer
    Linköping University, The Institute of Technology. Linköping University, Department of Electrical Engineering, Electronic Devices.
    An active recursive RF filter in 0.35 um BiCMOS.2003In: GigaHerz Conference 2003.,2003, 2003Conference paper (Other academic)
  • 18.
    Andersson, Stefan
    et al.
    Linköping University, Department of Electrical Engineering, Electronic Devices. Linköping University, The Institute of Technology.
    Svensson, Christer
    Linköping University, Department of Electrical Engineering, Electronic Devices. Linköping University, The Institute of Technology.
    An Active Recursive RF Filter in 0.35 μm BiCMOS2005In: Journal of Analog Integrated Circuits and Signal Processing, ISSN 0925-1030, Vol. 44, no 3, p. 213-218Article in journal (Refereed)
    Abstract [en]

    An active recursive filter approach is proposed for the implementaion of an inductorless, tuneable RF filter in BiCMOS. A test circuit was designed and manufactured in a 0.35 μm SiGe BiCMOS technology. In simulations, the feasibility of this type of filter was demonstrated and reasonably good performance was obtained. The simulations show a center frequency tuning range from 6 to 9.4 GHz and a noise figure of 8.8 to 10.4 dB depending on center frequency. Gain and Q-value are tunable in a wide range. Simulated IIP-3 and 1-dB compression point is −26 and −34 dBm respectively, simulated at the center frequency 8.5 GHz and with 15 dB gain. Measurements on the fabricated device shows a center frequency tuning range from 6.6 to 10 GHz, i.e. slightly higher center frequencies were measured than the simulated.

  • 19.
    Andersson, Stefan
    et al.
    Linköping University, Department of Electrical Engineering, Electronic Devices. Linköping University, The Institute of Technology.
    Svensson, Christer
    Linköping University, Department of Electrical Engineering, Electronic Devices. Linköping University, The Institute of Technology.
    Channel length as a design parameter for low noise wideband LNAs in deep submicron CMOS technologies2004In: Proceedings of the Norchip 2004 Conference, Oslo, Norway, November, 2004, p. 123-126Conference paper (Refereed)
    Abstract [en]

    In this paper, measurements of drain thermal noise for three NMOS devices with different channel lengths was carried out. The three NMOS devices were all implemented in a 0.18 μm CMOS technology, with channel lengths 0.18. 0.36, and 0.72 μm, respectively. The result was then compared with simulated data using the BSIM3- model and parameters provided by the vendor Large discrepancies between measurements and simulations were observed. This work was done in order to understand how to utilize transistor length as a design parameter to achieve optimal noise gures for wideband LNAs in deep submicron technologies.

  • 20.
    Andersson, Stefan
    et al.
    Linköping University, The Institute of Technology. Linköping University, Department of Electrical Engineering, Electronic Devices.
    Svensson, Christer
    Linköping University, The Institute of Technology. Linköping University, Department of Electrical Engineering, Electronic Devices.
    Direct experimental verification of shot noise in short channel MOS transistors2005In: Electronics Letters, ISSN 0013-5194, E-ISSN 1350-911X, Vol. 41, no 15, p. 869-871Article in journal (Refereed)
    Abstract [en]

    Drain noise current was measured at an extended temperature range on n-MOS transistors of various lengths made in a 0.18 urn process. A comparison with theoretical noise models strongly indicates the mechanism of shot noise produced near the source by diffusion currents, as proposed by Obrecht et al. © IEE 2005.

  • 21.
    Andersson, Stefan
    et al.
    Linköping University, The Institute of Technology. Linköping University, Department of Electrical Engineering, Electronic Devices.
    Svensson, Christer
    Linköping University, The Institute of Technology. Linköping University, Department of Electrical Engineering, Electronic Devices.
    Drugge, Oskar
    Acreo AB, Norrköping.
    Wideband LNA for a multistandard wireless receiver in 0.18 um CMOS.2003In: Swedish system-on-chip conference,2003, Lund: Lunds universitet , 2003Conference paper (Other academic)
  • 22.
    Andersson, Stefan
    et al.
    Linköping University, Department of Electrical Engineering, Electronic Devices. Linköping University, The Institute of Technology.
    Svensson, Christer
    Linköping University, Department of Electrical Engineering, Electronic Devices. Linköping University, The Institute of Technology.
    Drugge, Oskar
    Wideband LNA for a Multistandard Wireless Receiver in 0.18 μm CMOS2003In: Proceedings of the 29th European Solid-State Circuits Conference, 2003. ESSCIRC '03, 2003, p. 655-658Conference paper (Refereed)
    Abstract [en]

    A differential wideband LNA for a multistandard receiver has been designed and implemented in 0.18μm CMOS. The circuit topology is a two-stage amplifier with active feedback. The input stage is a common-source stage with a common-drain stage in the feedback loop for impedance matching. Bandwidth enhancement with inductive shunt-peaking is used for maximizing the bandwidth. Measurements on the fabricated device show a power gain of 13.1 dB and a 3-dB bandwidth of nearly 7 GHz together with an IIP3 and a 1-dB compression point of -4.7 dBm and -15.2 dBm respectively. The measured noise figures are 3.3 dB at 1 GHz and 5.5 dB at 6 GHz. Reported LNAs with similar performance are usually implemented with bipolar transistors or MESFETs.

  • 23.
    Blad, Anton
    et al.
    Linköping University, The Institute of Technology. Linköping University, Department of Electrical Engineering, Electronics System.
    Svensson, Christer
    Linköping University, The Institute of Technology. Linköping University, Department of Electrical Engineering, Electronic Devices.
    Johansson, Håkan
    Linköping University, The Institute of Technology. Linköping University, Department of Electrical Engineering, Electronics System.
    Andersson, Stefan
    Linköping University, The Institute of Technology. Linköping University, Department of Electrical Engineering, Electronic Devices.
    An RF sampling radio frontend based on sigmadelta-conversion.2006In: 24th Norchip Conference,2006, IEEE , 2006, p. 133-136Conference paper (Refereed)
  • 24.
    Caputa, Peter
    et al.
    Linköping University, Department of Electrical Engineering, Electronic Devices. Linköping University, The Institute of Technology.
    Fredriksson, Henrik
    Linköping University, Department of Electrical Engineering, Electronic Devices. Linköping University, The Institute of Technology.
    Hansson, Martin
    Linköping University, Department of Electrical Engineering, Electronic Devices. Linköping University, The Institute of Technology.
    Andersson, Stefan
    Linköping University, Department of Electrical Engineering, Electronic Devices. Linköping University, The Institute of Technology.
    Alvandpour, Atila
    Linköping University, Department of Electrical Engineering, Electronic Devices. Linköping University, The Institute of Technology.
    Svensson, Christer
    Linköping University, Department of Electrical Engineering, Electronic Devices. Linköping University, The Institute of Technology.
    An Extended Transition Energy Cost Model for Buses in Deep Submicron Technologies2004In: Proceedings of the Power and Timing Modeling, Optimization and Simulation Conference, Santorini, Greece, 2004, p. 849-858Conference paper (Other academic)
  • 25.
    Caputa, Peter
    et al.
    Linköping University, Department of Electrical Engineering, Electronic Devices. Linköping University, The Institute of Technology.
    Fredriksson, Henrik
    Linköping University, Department of Electrical Engineering, Electronic Devices. Linköping University, The Institute of Technology.
    Hansson, Martin
    Linköping University, Department of Electrical Engineering, Electronic Devices. Linköping University, The Institute of Technology.
    Andersson, Stefan
    Linköping University, Department of Electrical Engineering, Electronic Devices. Linköping University, The Institute of Technology.
    Alvandpour, Atila
    Linköping University, Department of Electrical Engineering, Electronic Devices. Linköping University, The Institute of Technology.
    Svensson, Christer
    Linköping University, The Institute of Technology. Linköping University, Department of Electrical Engineering, Electronic Devices.
    An extended transition energy cost model for buses in deep submicron technologies2004In: Integrated Circuit and System Design. Power and Timing Modeling, Optimization and Simulation: 14th International Workshop, PATMOS 2004, Santorini, Greece, September 15-17, 2004. Proceedings / [ed] Enrico Macii, Vassilis Paliouras, Odysseas Koufopavlou, Springer Berlin/Heidelberg, 2004, Vol. 3254, p. 849-858Chapter in book (Refereed)
    Abstract [en]

    In this paper we present and carefully analyze a transition energy cost model aimed for efficient power estimation of performance critical deep submicron buses. We derive an accurate transition energy cost matrix, scalable to buses of arbitrary bit width, which includes properties that closer capture effects present in high-performance VLSI buses. The proposed energy model is verified against Spectre simulations of an implementable bus, including drivers. The average discrepancy between results from Spectre and the suggested model is limited to 4.5% when fringing effects of edge wires is neglected. The proposed energy model can account for effects that limit potential energy savings from bus transition coding.

  • 26.
    Carlsson, Ingvar
    et al.
    EK. ISY, LiU.
    Andersson, Stefan
    Linköping University, The Institute of Technology. Linköping University, Department of Electrical Engineering, Electronic Devices.
    Natarajan, S
    MoSys.
    Alvandpour, Atila
    Linköping University, The Institute of Technology. Linköping University, Department of Electrical Engineering, Electronic Devices.
    A high density, low leakage, 5T SRAM for embedded caches2004In: ESSCIRC 2004,2004, Leuven: IEEE, Inc. , 2004, p. 215-Conference paper (Refereed)
  • 27.
    Dabrowski, Jerzy
    et al.
    Linköping University, The Institute of Technology. Linköping University, Department of Electrical Engineering, Electronic Devices.
    Andersson, Stefan
    Linköping University, The Institute of Technology. Linköping University, Department of Electrical Engineering, Electronic Devices.
    Svensson, Christer
    Linköping University, The Institute of Technology. Linköping University, Department of Electrical Engineering, Electronic Devices.
    Konopacki, J.
    Silesian University of Technology, Gliwice, Poland.
    SC Filter Design for RF Applications2006In: Mixed design of integrated circuits and systems MIXDES 2006,2006, Lodz, Poland: Dpt of Microelectronics and Computer Science, Technical University of Lodz, Poland , 2006, p. 341-Conference paper (Refereed)
  • 28.
    Hansson, Martin
    et al.
    Linköping University, The Institute of Technology. Linköping University, Department of Electrical Engineering, Electronic Devices.
    Andersson, Stefan
    Linköping University, The Institute of Technology. Linköping University, Department of Electrical Engineering, Electronic Devices.
    Caputa, Peter
    Linköping University, The Institute of Technology. Linköping University, Department of Electrical Engineering, Electronic Devices.
    Alvandpour, Atila
    Linköping University, The Institute of Technology. Linköping University, Department of Electrical Engineering, Electronic Devices.
    Laboratory Manual, TSEK01 VLSI Design Project 2006.2005Other (Other (popular science, discussion, etc.))
  • 29.
    Hansson, Martin
    et al.
    Linköping University, The Institute of Technology. Linköping University, Department of Electrical Engineering, Electronic Devices.
    Andersson, Stefan
    Linköping University, The Institute of Technology. Linköping University, Department of Electrical Engineering, Electronic Devices.
    Caputa, Peter
    Linköping University, The Institute of Technology. Linköping University, Department of Electrical Engineering, Electronic Devices.
    Alvandpour, Atila
    Linköping University, The Institute of Technology. Linköping University, Department of Electrical Engineering, Electronic Devices.
    TSEK 01 VLSI design project 2005.2004Other (Other (popular science, discussion, etc.))
  • 30.
    Lakdawala, H.
    et al.
    Intel, Hillsboro, USA.
    Zhan, J.
    Intel, Hillsboro, USA.
    Andersson, Stefan
    Linköping University, The Institute of Technology. Linköping University, Department of Electrical Engineering, Electronic Devices.
    Carlton, B.R.
    Intel, Hillsboro, USA.
    Nicholls, R.B.
    Intel, Hillsboro, USA.
    Yaghini, N.
    Intel, Hillsboro, USA.
    Bishop, R.E.
    Intel, Hillsboro, USA.
    Taylor, S.S.
    Intel, Hillsboro, USA.
    Soumyanath, K.
    Intel, Hillsboro, USA.
    Multi-band (1-6GHz), sampled, sliding-IF receiver with discrete-time filtering in 90nm digital CMOS process.2006In: VLSI Symposium Conference,2006, Piscataway: IEEE , 2006, p. 230-Conference paper (Refereed)
  • 31.
    Ramzan, Rashad
    et al.
    Linköping University, Department of Electrical Engineering. Linköping University, The Institute of Technology.
    Andersson, Stefan
    Linköping University, Department of Electrical Engineering. Linköping University, The Institute of Technology.
    Dabrowski, Jerzy
    Linköping University, Department of Electrical Engineering, Electronic Devices. Linköping University, The Institute of Technology.
    Svensson, Christer
    Linköping University, Department of Electrical Engineering, Electronic Devices. Linköping University, The Institute of Technology.
    A 1.4V 25mW Inductorless Wideband LNA in 0.13μm CMOS2007In: IEEE International Solid State Circuits Conference (ISSCC), San Francisco, California, USA, Februrary 11-15, IEEE , 2007, p. 424-613Conference paper (Refereed)
    Abstract [en]

    A 1.4V wideband inductorless LNA, implemented in a 0.13mum CMOS process, consumes 25mW and occupies 0.019mm2. Measurement results show 17dB voltage gain, 7GHz BW, 2.4dB NF at 3GHz, -4.1 dBm IIP3, and -20dBm P1dB. A common-drain feedback circuit provides wideband 50Omega input matching and partial noise cancellation. A current reuse technique improves both gain and power.

  • 32.
    Ramzan, Rashad
    et al.
    Linköping University, Department of Electrical Engineering, Electronic Devices. Linköping University, The Institute of Technology.
    Andersson, Stefan
    Linköping University, Department of Electrical Engineering, Electronic Devices. Linköping University, The Institute of Technology.
    Dabrowski, Jerzy
    Linköping University, Department of Electrical Engineering, Electronic Devices. Linköping University, The Institute of Technology.
    Svensson, Christer
    Linköping University, Department of Electrical Engineering, Electronic Devices. Linköping University, The Institute of Technology.
    Multiband RF-Sampling Receiver Front-End with On-Chip Testability in 0.13μm CMOS2009In: Analog Integrated Circuits and Signal Processing, ISSN 0925-1030, E-ISSN 1573-1979, Vol. 61, no 2, p. 115-127Article in journal (Refereed)
    Abstract [en]

    In this paper a flexible RF-sampling front-end primarily intended for WLAN standards operating in the 2.4 GHz and 5–6 GHz bands is presented. The circuit is implemented with on-chip Design for Test (DfT) features in 0.13 μm CMOS process. The front-end consists of a wideband LNA, a sampling IQ down-converter implemented as switched-capacitor decimation filter, test attenuator (TA), and RF detectors. The architecture is generic and scalable in frequency. It can operate at a sampling frequency up to 3 GHz and RF carrier up to 6 GHz with 29 subsampling. The selectable decimation factor of 8 or 16 makes the A/D conversion feasible. The frequency response, linearity, and NF of the whole frontend have been measured. The power consumption of complete RF front-end is 176 mW. The on-chip DfT features are helpful in reduction of overall test cost and time in volume production. The measurement results show the feasibility of DfT approach for multiband radio receiver design using standard CMOS process.

  • 33.
    Ramzan, Rashad
    et al.
    Linköping University, Department of Electrical Engineering. Linköping University, The Institute of Technology.
    Andersson, Stefan
    Linköping University, Department of Electrical Engineering, Electronic Devices. Linköping University, The Institute of Technology.
    Dabrowski, Jerzy
    Linköping University, Department of Electrical Engineering, Electronic Devices. Linköping University, The Institute of Technology.
    Svensson, Christer
    Linköping University, Department of Electrical Engineering, Electronic Devices. Linköping University, The Institute of Technology.
    Wideband LNA for aMultistandard RF-Sampling Front-End in 0.13 μm CMOSManuscript (Other academic)
    Abstract [en]

    The pad pitch of modern RF ICs is in order of few tens of micrometers. Connecting the large number of high speed I/Os to outside world with good signal fidelity and low cost is extremely challenging. To cope with this requirement, we need reflection-free transmission lines from on-chip pad to on-board SMA connectors. Such a transmission line is very hard to design due to the difference in on-chip and on-board feature size and the requirement for extremely large bandwidth. In this paper, we propose the use of narrow tracks close to chip and wide tracks away from the chip. This narrow to wide transition in width results in impedance discontinuity. A step change in substrate thickness is utilized to cancel the effect of the width discontinuity, thus achieving a reflection-free microstrip. To verify the concept several microstrips were designed on multilayer FR4 PCB without any additional manufacturing steps. The TDR measurements reveal that impedance variation is less then 3Ω for 50Ω microstrip when the width changes from 165μm to 940μm and substrate thickness changes from 100μm to 500μm. The Sparameter measurement on same microstrip shows S11 better then -9dB for the frequency range 1-6GHz

  • 34.
    Rashad, Ramzan
    et al.
    Linköping University, The Institute of Technology. Linköping University, Department of Electrical Engineering, Electronic Devices.
    Andersson, Stefan
    Linköping University, The Institute of Technology. Linköping University, Department of Electrical Engineering, Electronic Devices.
    Wasim, Muhammad
    ISY Linköpings universitet.
    Dabrowski, Jerzy
    Linköping University, The Institute of Technology. Linköping University, Department of Electrical Engineering, Electronic Devices.
    On-chip BIST for radio front-ends.2006In: Swedish system-on-chip conference.,2006, Lund: Lunds universitet , 2006Conference paper (Refereed)
  • 35.
    Svensson, Christer
    et al.
    Linköping University, The Institute of Technology. Linköping University, Department of Electrical Engineering, Electronic Devices.
    Andersson, Stefan
    Linköping University, The Institute of Technology. Linköping University, Department of Electrical Engineering, Electronic Devices.
    Software Defined Radio - Visions, Challenges and Solutions.2006In: Radio Design in Nanometer Technologies. / [ed] Mohammed Ismail and Delia Rodríguez de Llera González., München: Springer Verlag , 2006, 1, p. -326Chapter in book (Other academic)
    Abstract [en]

      "Radio Design in Nanometer Technologies" addresses current trends and future directions in radio design for wireless applications. As radio transceivers constitute the major bottleneck in a wireless chipset in terms of power consumption and die size, the radio must be designed in the context of the entire system, end to end. Therefore the book will address wireless systems as well as the DSP parts before it gets into coverage of radio design issues. To that end, the book contains three parts: Part 1 is a general part discussing current and future wireless networks, chipset evolution over the past decade and ending with a discussion on radio requirements for software defined radio(SDR). Part 2 will focus on the digital baseband of a wireless chip set, flexible DSP cores for multi-standard wireless platforms and system-on-chip SoC implementation and design flow issues. Part 3 will be devoted to radio design issues starting at the transceiver level and going down to discuss critical issues facing design of future multi band multi standard radios for emerging wireless standards such as UMTS, WiMaX, MIMO and WLAN in a way that is consistent with the prevailing vision of SDR. As such, the book is the first volume that looks at the integrated radio design problem as a 'piece of a big puzzle', namely the entire chipset or single chip that builds an entire wireless system. This is the only way to successfully design radios to meet the stringent demands of today's increasingly complex wireless systems

  • 36.
    Svensson, Christer
    et al.
    Linköping University, The Institute of Technology. Linköping University, Department of Electrical Engineering, Electronic Devices.
    Andersson, Stefan
    Linköping University, The Institute of Technology. Linköping University, Department of Electrical Engineering, Electronic Devices.
    Bogner, Peter
    Infineon Technologies, Villach, Austria.
    On the power consumption of analog to digital converters.2006In: 24th Norchip Conference,2006, IEEE , 2006, p. 49-52Conference paper (Refereed)
  • 37.
    Svensson, Christer
    et al.
    Linköping University, The Institute of Technology. Linköping University, Department of Electrical Engineering, Electronic Devices.
    Caputa, Peter
    Linköping University, The Institute of Technology. Linköping University, Department of Electrical Engineering, Electronic Devices.
    Andersson, Stefan
    Linköping University, The Institute of Technology. Linköping University, Department of Electrical Engineering, Electronic Devices.
    A tuned, inductorless, recursive filter LNA in CMOS.2002In: RVK 02 conference.,2002, 2002Conference paper (Refereed)
1 - 37 of 37
CiteExportLink to result list
Permanent link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf