liu.seSearch for publications in DiVA
Change search
Refine search result
1 - 12 of 12
CiteExportLink to result list
Permanent link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Rows per page
  • 5
  • 10
  • 20
  • 50
  • 100
  • 250
Sort
  • Standard (Relevance)
  • Author A-Ö
  • Author Ö-A
  • Title A-Ö
  • Title Ö-A
  • Publication type A-Ö
  • Publication type Ö-A
  • Issued (Oldest first)
  • Issued (Newest first)
  • Created (Oldest first)
  • Created (Newest first)
  • Last updated (Oldest first)
  • Last updated (Newest first)
  • Disputation date (earliest first)
  • Disputation date (latest first)
  • Standard (Relevance)
  • Author A-Ö
  • Author Ö-A
  • Title A-Ö
  • Title Ö-A
  • Publication type A-Ö
  • Publication type Ö-A
  • Issued (Oldest first)
  • Issued (Newest first)
  • Created (Oldest first)
  • Created (Newest first)
  • Last updated (Oldest first)
  • Last updated (Newest first)
  • Disputation date (earliest first)
  • Disputation date (latest first)
Select
The maximal number of hits you can export is 250. When you want to export more records please use the Create feeds function.
  • 1.
    Ahsan, Naveed
    et al.
    Linköping University, Department of Electrical Engineering. Linköping University, The Institute of Technology.
    Dabrowski, Jerzy
    Linköping University, Department of Electrical Engineering, Electronic Devices. Linköping University, The Institute of Technology.
    Ouacha, Aziz
    Linköping University, Department of Electrical Engineering, Electronic Devices. Linköping University, The Institute of Technology.
    A Self-Tuning Technique for Optimization of Dual Band LNA2008In: European Wireless Technology Conference (EuWiT), EuMW 2008, October 27-28, 2008, Amsterdam, The Netherlands, IEEE , 2008, p. 178-181Conference paper (Refereed)
    Abstract [en]

    This paper presents a self-tuning technique for optimization of a dual band LNAthat can be used in a flexible RF front-end suitable for IEEE 802.11a/b/g WLANapplications. With this tuning technique the LNA can perform self-calibrationfor the optimal performance. A possible shift in resonance frequency due toprocess and temperature variations can be compensated by this method. Theproposed self-tuning technique is implemented by using a simple RF detector atthe LNA output. Based on the DC value provided by this detector the LNA istuned for a maximum gain through the tuning loop, which incorporates ADC,digital base-band and DAC. We show that the tuning error can be within halfLSB of ADC provided the DAC and ADC resolutions are constraint by aspecified condition. For 4-bit case this value corresponds to a gain error of0.4 dB. The LNA has been implemented in 0.2μm GaAs process offered byOMMICTM. In measurements the LNA achieves a gain of 15.1 dB and 21.6 dBin the upper and lower band, respectively, with corresponding NF of 3.8 dB and2.8 dB. In the lower band the measured IIP3 is -3 dBm and 1dB_CP is -8 dBm.

  • 2.
    Ahsan, Naveed
    et al.
    Linköping University, The Institute of Technology. Linköping University, Department of Electrical Engineering, Electronic Devices.
    Ouacha, Aziz
    Linköping University, The Institute of Technology. Linköping University, Department of Electrical Engineering, Electronic Devices.
    Dabrowski, Jerzy
    Linköping University, The Institute of Technology. Linköping University, Department of Electrical Engineering, Electronic Devices.
    A tunable LNA for flexible RF front-end.2006In: Swedish system-on-chip conference.,2006, Lund: Lunds universitet , 2006Conference paper (Refereed)
  • 3.
    Ahsan, Naveed
    et al.
    Linköping University, Department of Electrical Engineering, Electronic Devices. Linköping University, The Institute of Technology.
    Ouacha, Aziz
    Linköping University, Department of Electrical Engineering, Electronic Devices. Linköping University, The Institute of Technology.
    Dabrowski, Jerzy
    Linköping University, Department of Electrical Engineering, Electronic Devices. Linköping University, The Institute of Technology.
    Samuelsson, Carl
    Swedish Defence Research Agency (FOI), P.O. Box 1165, SE-581 11 Linköping, Sweden.
    Dual Band Tunable LNA for Flexible RF Front End2007In: Proceedings of the IEEE International Bhurban Conference on Applied Sciences & Technology (IBCAST 2007), January 8-11, 2007, Islamabad, Pakistan, IEEE Explore , 2007, p. 19-22Conference paper (Refereed)
    Abstract [en]

    This paper presents a dual band LNA that can be switched between two bands (2.4 GHz & 5.2 GHz) for IEEE 802.1 la/b/g WLAN applications. The LNA is also tunable within each band and the tuning is incorporated by on-chip varactors. The test chip consists of two fully integrated narrow-band tunable LNAs along with SPDT switch. For power saving one LNA can be switched off. The technology process is 0.2 mum GaAs offered by OMMIC. The LNA can achieve a relatively good performance over the two bands as demonstrated by simulation. With a 3V supply, the LNA has a gain of 26.2 dB at 2.4 GHz and 21.8 dB at 5.2 GHz and the corresponding NF varies between 2.07 dB and 1.84 dB, respectively. The LNA has an IIP3 of -7 dBm at 2.4 GHz and -1.6 dBm at 5.2 GHz.

  • 4.
    Ahsan, Naveed
    et al.
    Linköping University, The Institute of Technology. Linköping University, Department of Electrical Engineering, Electronic Devices.
    Ouacha, Aziz
    Linköping University, The Institute of Technology. Linköping University, Department of Electrical Engineering, Electronic Devices.
    Samuelsson, Carl
    FOI, Linköping.
    Boman, Tomas
    FOI, Linköping.
    A widely tunable filter using generic PROMFA cells.2007In: Swedish System-on-Chip Conference SSoCC,2007, Göteborg: CTH , 2007Conference paper (Refereed)
  • 5.
    Ahsan, Naveed
    et al.
    Linköping University, Department of Electrical Engineering, Electronic Devices. Linköping University, The Institute of Technology.
    Ouacha, Aziz
    Linköping University, Department of Electrical Engineering, Electronic Devices. Linköping University, The Institute of Technology.
    Samuelsson, Carl
    Swedish Defence Research Agency (FOI), P.O. Box 1165, SE-581 11 Linköping, Sweden.
    Boman, Tomas
    Swedish Defence Research Agency (FOI), P.O. Box 1165, SE-581 11 Linköping, Sweden.
    Applications of Programmable Microwave Function Array (PROMFA)2007In: Proceedings of the IEEE European Conference on Circuit Theory and Design (ECCTD 2007), August 26-30, 2007, Seville, Spain, IEEE , 2007, p. 164 -167Conference paper (Refereed)
    Abstract [en]

    This paper describes the use of programmable microwave function array (PROMFA) for different microwave application. The PROMFA concept is based on an array of generic cells, in which a number of different functions can be realized. Each PROMFA cell is a four-port circuit, that can either be programmed independently or collectively according to a specific need. Specifically, the phase shift capability in a single PROMFA cell, useful for a new type of phase shifter design is discussed. The paper also presents the functionality of this new architecture as a beamforming network. As an example case an active corporate feed network and a tunable recursive filter is demonstrated. Simulated and measured results are presented.

  • 6.
    Ahsan, Naveed
    et al.
    Linköping University, Department of Electrical Engineering. Linköping University, The Institute of Technology.
    Ouacha, Aziz
    Linköping University, Department of Electrical Engineering, Electronic Devices. Linköping University, The Institute of Technology.
    Svensson, Christer
    Linköping University, Department of Electrical Engineering, Electronic Devices. Linköping University, The Institute of Technology.
    Samuelsson, Carl
    Swedish Defence Research Agency (FOI), P.O. Box 1165, SE-581 11 Linköping, Sweden.
    Dąbrowski, Jerzy
    Linköping University, Department of Electrical Engineering, Electronic Devices. Linköping University, The Institute of Technology.
    A Design Approach for Flexible RF Circuits Using Reconfigurable PROMFA Cells2009In: Analog Integrated Circuits and Signal Processing, ISSN 0925-1030, E-ISSN 1573-1979Article in journal (Other academic)
    Abstract [en]

    This paper presents a design approach for flexible RF circuits using Programmable Microwave Function Array (PROMFA) cells. The concept is based on an array of generic cells that can be dynamically reconfigured. Therefore, the same circuit can be used for various functions e.g. amplifier, tunable filter and tunable oscillator. For proof of concept a test chip has been implemented in 90nm CMOS process. The chip measurement results indicate that a single unit cell amplifier has a typical gain of 4dB with noise figure of 2.65dB at 1.5GHz. The measured input referred 1dB compression point is -8dBm with an IIP3 of +1.1dBm at 1GHz. In a single unit cell oscillator configuration, the oscillator can achieve a wide tuning range of 600MHz to 1.8GHz. The measured phase noise is -94dBc/Hz at an offset frequency of 1MHz for the oscillation frequency of 1.2GHz. A single unit cell oscillator consumes 18mW at 1.2GHz while providing -8dBm power into 50Ω load. In a single unit cell filter configuration, the tunable band pass filter can achieve a reasonable tuning range of 600MHz to 1.2GHz with a typical power consumption of 13mW at 1GHz. A single unit cell has a total chip area of 0.091mm2 including the coupling capacitors.

  • 7.
    Ahsan, Naveed
    et al.
    Linköping University, Department of Electrical Engineering, Electronic Devices. Linköping University, The Institute of Technology.
    Svensson, Christer
    Linköping University, Department of Electrical Engineering, Electronic Devices. Linköping University, The Institute of Technology.
    Ramzan, Rashad
    Linköping University, Department of Electrical Engineering, Electronic Devices. Linköping University, The Institute of Technology.
    Dąbrowski, Jerzy
    Linköping University, Department of Electrical Engineering, Electronic Devices. Linköping University, The Institute of Technology.
    Ouacha, Aziz
    Linköping University, Department of Electrical Engineering, Electronic Devices. Linköping University, The Institute of Technology.
    Samuelsson, Carl
    Swedish Defence Research Agency (FOI), P.O. Box 1165, SE-581 11 Linköping, Sweden.
    A 1.1V 6.2mW, Highly Linear Wideband RF Front-end for Multi-Standard Receivers in 90nm CMOS2012In: Analog Integrated Circuits and Signal Processing, ISSN 0925-1030, E-ISSN 1573-1979, Vol. 70, no 1, p. 79-90Article in journal (Refereed)
    Abstract [en]

    This paper presents the design and implementation of a low power, highly linear, wideband RF front-end in 90nm CMOS. The architecture consists of an inverter-like common gate low noise amplifier followed by a passive ring mixer. The proposed architecture achieves high linearity in a wide band (0.5-6GHz) at very low power. Therefore, it is a suitable choice for software defined radio (SDR) receivers. The chip measurement results indicate that the inverter-like common gate input stage has a broadband input match achieving S11 below -8.8dB up to 6GHz. The measured single sideband noise figure at an LO frequency of 2GHz and an IF of 10MHz is 6.25dB. The front-end achieves a voltage conversion gain of 4.5dB at 1GHz with 3dB bandwidth of more than 6GHz. The measured input referred 1dB compression point is +1.5dBm while the IIP3 is +11.73dBm and the IIP2 is +26.23dBm respectively at an LO frequency of 2GHz. The RF front-end consumes 6.2mW from a 1.1V supply with an active chip area of 0.0856mm2.

  • 8.
    Mamor, M
    et al.
    Chalmers Univ Technol, Dept Phys, MC2, S-41296 Gothenburg, Sweden Univ Pretoria, Dept Phys, ZA-0002 Pretoria, South Africa Gothenburg Univ, S-41296 Gothenburg, Sweden Natl Def Res Estab, Dept Microwave Technol, S-58111 Linkoping, Sweden Chalmers Univ Technol, Dept Microelect ED, Solid State Elect Lab, S-41296 Gothenburg, Sweden.
    Ouacha, H
    Chalmers Univ Technol, Dept Phys, MC2, S-41296 Gothenburg, Sweden Univ Pretoria, Dept Phys, ZA-0002 Pretoria, South Africa Gothenburg Univ, S-41296 Gothenburg, Sweden Natl Def Res Estab, Dept Microwave Technol, S-58111 Linkoping, Sweden Chalmers Univ Technol, Dept Microelect ED, Solid State Elect Lab, S-41296 Gothenburg, Sweden.
    Willander, Magnus
    Linköping University, The Institute of Technology. Linköping University, Department of Science and Technology.
    Auret, FD
    Chalmers Univ Technol, Dept Phys, MC2, S-41296 Gothenburg, Sweden Univ Pretoria, Dept Phys, ZA-0002 Pretoria, South Africa Gothenburg Univ, S-41296 Gothenburg, Sweden Natl Def Res Estab, Dept Microwave Technol, S-58111 Linkoping, Sweden Chalmers Univ Technol, Dept Microelect ED, Solid State Elect Lab, S-41296 Gothenburg, Sweden.
    Goodman, SA
    Chalmers Univ Technol, Dept Phys, MC2, S-41296 Gothenburg, Sweden Univ Pretoria, Dept Phys, ZA-0002 Pretoria, South Africa Gothenburg Univ, S-41296 Gothenburg, Sweden Natl Def Res Estab, Dept Microwave Technol, S-58111 Linkoping, Sweden Chalmers Univ Technol, Dept Microelect ED, Solid State Elect Lab, S-41296 Gothenburg, Sweden.
    Ouacha, Aziz
    Linköping University, The Institute of Technology. Linköping University, Department of Electrical Engineering, Electronic Devices.
    Sveinbjornsson, E
    Chalmers Univ Technol, Dept Phys, MC2, S-41296 Gothenburg, Sweden Univ Pretoria, Dept Phys, ZA-0002 Pretoria, South Africa Gothenburg Univ, S-41296 Gothenburg, Sweden Natl Def Res Estab, Dept Microwave Technol, S-58111 Linkoping, Sweden Chalmers Univ Technol, Dept Microelect ED, Solid State Elect Lab, S-41296 Gothenburg, Sweden.
    High-energy He-ion irradiation-induced defects and their influence on the noise behavior of Pd/n-Si1-xGex Schottky junctions2000In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 76, no 25, p. 3750-3752Article in journal (Refereed)
    Abstract [en]

    We report on the electrical properties of defects introduced by high-energy 5.4 MeV He ions in n-type strained n-SiGe and the impact of this irradiation on the noise properties of Pd/n-Si1-xGex Schottky barrier diodes (SBDs). From the deep level transient spectroscopy measurements, the main defects EA1 and EA2 are observed in both Si and Si0.96Ge0.04 and have energy levels at 0.24 and 0.44 eV, respectively, below the conduction band. EA1 and EA2 have been correlated with the V-V and the P-V pairs, respectively. For both defects EA1 and EA2, the energy level position is found to be the same for x = 0 and 0.04, indicating that such levels are pinned to the conduction band. Furthermore, the impact of the high-energy He-ion irradiation on the electrical noise properties of Pd/n-Si1-xGex SBDs is also studied. From the noise experimental data, the main noise source observed in these irradiated diodes was attributed to the generation-recombination noise inducing an abnormal peak in their noise spectra at around f(1) = 180 Hz. This peak is found to be independent of Ge concentration. (C) 2000 American Institute of Physics. [S0003-6951(00)02125-2].

  • 9.
    Ouacha, Aziz
    et al.
    Linköping University, The Institute of Technology. Linköping University, Department of Electrical Engineering, Electronic Devices.
    Boman, Tomas
    FOI, Linköping.
    A microwave-based multifunction system. Concept: A necessity for network centric warfare.2003In: CIMI,2003, 2003Conference paper (Other academic)
  • 10.
    Ouacha, Aziz
    et al.
    Linköping University, Department of Electrical Engineering, Electronic Devices. Linköping University, The Institute of Technology.
    Gunnarsson, R.
    Swedish Defence Research Agency, Linköping.
    Pettersson, L.
    Swedish Defence Research Agency.
    Huss, L.-G.
    Swedish Defence Research Agency.
    Samuelsson, C.
    Swedish Defence Research Agency.
    Lindstrom, S.
    Swedish Defence Research Agency.
    Leijon, S.
    Swedish Defence Research Agency.
    Alfredsson, M.
    FMV.
    Wideband multibeam antenna for integration in small platforms in EuCAP 2010 - The 4th European Conference on Antennas and Propagation, vol , issue , pp 55058252010In: EuCAP 2010 - The 4th European Conference on Antennas and Propagation, 2010Conference paper (Refereed)
    Abstract [en]

    A wideband multibeam antenna for integration in small platforms such as UAVs has been demonstrated. The demonstration was performed on a single facet comprising an 8×4 bowtie antenna elements array and a beamforming network which includes both transmitter and receiver chains and can therefore be used in multifunction systems for EW and communication. The operating frequency band chosen for this demonstrator is 6 - 15 GHz. Due to the modularity of the concept, the demonstrated facet can either be used stand alone or forming a faceted array depending on the required field of coverage and/or platform structure. A compact and lightweight phased array concept for 360o coverage is also discussed.

  • 11.
    Ouacha, Aziz
    et al.
    Linköping University, The Institute of Technology. Linköping University, Department of Electrical Engineering, Electronic Devices.
    Nilsson, T.
    FOI, Linköping.
    Samuelsson, C.
    FOI, Linköping.
    Alfredson, M.
    FOI, Linköping.
    Key circuits for a reconfigurable and bi-directional beamformer for ultra wideband applications.2003In: European Microwave Week,2003, 2003Conference paper (Refereed)
  • 12.
    Samuelsson, Carl
    et al.
    FOI, Linköping.
    Ouacha, Aziz
    Linköping University, The Institute of Technology. Linköping University, Department of Electrical Engineering, Electronic Devices.
    Ahsan, Naveed
    Linköping University, The Institute of Technology. Linköping University, Department of Electrical Engineering, Electronic Devices.
    Boman, Tomas
    FOI, Linköping.
    Programmable microwave function array, PROMFA.2006In: Proceedings of Asia-Pacific Microwave Conference 2006.,2006, 2006Conference paper (Refereed)
1 - 12 of 12
CiteExportLink to result list
Permanent link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf