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  • 1.
    Adam, Rania Elhadi
    et al.
    Linköping University, Department of Science and Technology, Physics, Electronics and Mathematics. Linköping University, Faculty of Science & Engineering.
    Chalangar, Ebrahim
    Linköping University, Department of Science and Technology, Physics, Electronics and Mathematics. Linköping University, Faculty of Science & Engineering. School of Information Technology, Halmstad University, Halmstad, Sweden.
    Pirhashemi, Mahsa
    Department of Chemistry, Faculty of Sciences, University of Mohaghegh Ardabili, Ardabil, Iran.
    Pozina, Galia
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Liu, Xianjie
    Linköping University, Department of Physics, Chemistry and Biology, Surface Physics and Chemistry. Linköping University, Faculty of Science & Engineering.
    Palisaitis, Justinas
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Pettersson, Håkan
    Linköping University, Department of Science and Technology, Physics, Electronics and Mathematics. Linköping University, Faculty of Science & Engineering. School of Information Technology, Halmstad University, Halmstad, Sweden; Solid State Physics and NanoLund, Lund University, Lund, Sweden.
    Willander, Magnus
    Linköping University, Faculty of Science & Engineering. Linköping University, Department of Science and Technology, Physics, Electronics and Mathematics.
    Nur, Omer
    Linköping University, Department of Science and Technology, Physics, Electronics and Mathematics. Linköping University, Faculty of Science & Engineering.
    Graphene-based plasmonic nanocomposites for highly enhanced solar-driven photocatalytic activities2019In: RSC Advances, E-ISSN 2046-2069, Vol. 9, no 52, p. 30585-30598Article in journal (Refereed)
    Abstract [en]

    High-efficiency photocatalysts are crucial for the removal of organic pollutants and environmental sustainability. In the present work, we report on a new low-temperature hydrothermal chemical method, assisted by ultrasonication, to synthesize disruptive plasmonic ZnO/graphene/Ag/AgI nanocomposites for solar-driven photocatalysis. The plasmonic nanocomposites were investigated by a wide range of characterization techniques, confirming successful formation of photocatalysts with excellent degradation efficiency. Using Congo red as a model dye molecule, our experimental results demonstrated a photocatalytic reactivity exceeding 90% efficiency after one hour simulated solar irradiation. The significantly enhanced degradation efficiency is attributed to improved electronic properties of the nanocomposites by hybridization of the graphene and to the addition of Ag/AgI which generates a strong surface plasmon resonance effect in the metallic silver further improving the photocatalytic activity and stability under solar irradiation. Scavenger experiments suggest that superoxide and hydroxyl radicals are responsible for the photodegradation of Congo red. Our findings are important for the fundamental understanding of the photocatalytic mechanism of ZnO/graphene/Ag/AgI nanocomposites and can lead to further development of novel efficient photocatalyst materials.

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  • 2.
    Alnoor, Hatim
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Elsukova, Anna
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Palisaitis, Justinas
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Persson, Ingemar
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Tseng, Eric Nestor
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Lu, Jun
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Persson, Per O A
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Exploring MXenes and their MAX phase precursors by electron microscopy2021In: Materials Today Advances, E-ISSN 2590-0498, Vol. 9, article id 100123Article in journal (Refereed)
    Abstract [en]

    This review celebrates the width and depth of electron microscopy methods and how these have enabled massive research efforts on MXenes. MXenes constitute a powerful recent addition to 2-dimensional materials, derived from their parent family of nanolaminated materials known as MAX phases. Owing to their rich chemistry, MXenes exhibit properties that have revolutionized ranges of applications, including energy storage, electromagnetic interference shielding, water filtering, sensors, and catalysis. Few other methods have been more essential in MXene research and development of corresponding applications, compared with electron microscopy, which enables structural and chemical identification at the atomic scale. In the following, the electron microscopy methods that have been applied to MXene and MAX phase precursor research are presented together with research examples and are discussed with respect to advantages and challenges.

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  • 3.
    Amloy, Supaluck
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Karlsson, Fredrik
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    Palisaitis, Justinas
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Persson, Per
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Chen, Y. T.
    Institute of Atomic and Molecular Sciences, Academia Sinica, Taiwan.
    Chen, K. H.
    Institute of Atomic and Molecular Sciences, Academia Sinica, Taiwan.
    Hsu, H. C.
    Center for Condensed Matter Sciences, National Taiwan University, Taiwan.
    Hsiao, C. L.
    Center for Condensed Matter Sciences, National Taiwan.
    Chen, L. C.
    Center for Condensed Matter Sciences, National Taiwan.
    Holtz, Per-Olof
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Excitons and biexcitons in InGaN quantum dot like localization centersManuscript (preprint) (Other academic)
    Abstract [en]

    Indium segregation in a narrow InGaN single quantum well creates quantum dot (QD) like exciton localization centers. Cross section transmission electron microscopy reveals varying shapes and lateral sizes in the range ~1-5 nm of the QD-like features, while scanning near field optical microscopy demonstrates a highly inhomogeneous spatial distribution of optically active individual localization centers. Microphotoluminescence spectroscopy confirms the spectrally inhomogeneous distribution of localization centers, in which the exciton and the biexciton related emissions from single centers of varying geometry could be identified by means of excitation power dependencies. Interestingly, the biexciton binding energy (Ebxx) was found to vary from center to center, between 3 to -22 meV, in correlation with the exciton emission energy. Negative binding energies justify the three-dimensional quantum confinement, which confirms QD-like properties of the localization centers.! The observed energy correlation is proposed to be understood as variations of the lateral extension of the confinement potential, which would yield smaller values of Ebxx for reduced lateral extension and higher exciton emission energy. The proposed relation between lateral extension and Ebxx is further supported by the exciton and the biexciton recombination lifetimes of a single QD, which suggest a lateral extension of merely ~3 nm for a QD with strongly negative Ebxx = -15.5 meV.

  • 4.
    Amloy, Supaluck
    et al.
    Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology. Thaksin University, Thailand.
    Karlsson, K. Fredrik
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Eriksson, Martin O
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Palisaitis, Justinas
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Persson, Per O. Å.
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Chen, Y. T.
    Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology. Academia Sinica, Taiwan .
    Chen, K. H.
    Academia Sinica, Taiwan; National Taiwan University, Taiwan.
    Hsu, H. C.
    National Taiwan University, Taiwan.
    Hsiao, C. L.
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology. National Taiwan University, Taiwan.
    Chen, L. C.
    National Taiwan University, Taiwan.
    Holtz, Per-Olof
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Excitons and biexcitons in InGaN quantum dot like localization centers2014In: Nanotechnology, ISSN 0957-4484, Vol. 25, no 49, p. 495702-Article in journal (Refereed)
    Abstract [en]

    Indium segregation in a narrow InGaN single quantum well creates quantum dot (QD) like exciton localization centers. Cross-section transmission electron microscopy reveals varying shapes and lateral sizes in the range ∼1–5 nm of the QD-like features, while scanning near field optical microscopy demonstrates a highly inhomogeneous spatial distribution of optically active individual localization centers. Microphotoluminescence spectroscopy confirms the spectrally inhomogeneous distribution of localization centers, in which the exciton and the biexciton related emissions from single centers of varying geometry could be identified by means of excitation power dependencies. Interestingly, the biexciton binding energy (Ebxx) was found to vary from center to center, between 3 to −22 meV, in correlation with the exciton emission energy. Negative binding energies are only justified by a three-dimensional quantum confinement, which confirms QD-like properties of the localization centers. The observed energy correlation is proposed to be understood as variations of the lateral extension of the confinement potential, which would yield smaller values of Ebxx for reduced lateral extension and higher exciton emission energy. The proposed relation between lateral extension and Ebxx is further supported by the exciton and the biexciton recombination lifetimes of a single QD, which suggest a lateral extension of merely ∼3 nm for a QD with strongly negative Ebxx = −15.5 meV. 

  • 5.
    Bakhit, Babak
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Palisaitis, Justinas
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Persson, Per O.Å.
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Alling, Björn
    Linköping University, Department of Physics, Chemistry and Biology, Theoretical Physics. Linköping University, Faculty of Science & Engineering.
    Rosen, Johanna
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Petrov, Ivan
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering. Materials Research Laboratory and Department of Materials Science, University of Illinois, Urbana IL 61801, USA; Department of Materials Science and Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan.
    Greene, Joseph E
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering. Materials Research Laboratory and Department of Materials Science, University of Illinois, Urbana IL 61801, USA; Department of Materials Science and Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan.
    Greczynski, Grzegorz
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Self-organized columnar Zr0.7Ta0.3B1.5 core/shell-nanostructure thin films2020In: Surface & Coatings Technology, ISSN 0257-8972, E-ISSN 1879-3347, Vol. 401, article id 126237Article in journal (Refereed)
    Abstract [en]

    We recently showed that Zr1−xTaxBy thin films have columnar nanostructure in which column boundaries are B-rich for x < 0.2, while Ta-rich for x ≥ 0.2. Layers with x ≥ 0.2 exhibit higher hardness and, simultaneously, enhanced toughness. Here, we determine the atomic-scale nanostructure of sputter-deposited columnar Zr0.7Ta0.3B1.5 thin films. The columns, 95 ± 17 Å, are core/shell nanostructures in which 80 ± 15-Å cores are crystalline hexagonal-AlB2-structure Zr-rich stoichiometric Zr1−xTaxB2. The shell structure is a narrow dense, disordered region that is Ta-rich and highly B-deficient. The cores are formed under intense ion mixing via preferential Ta segregation, due to the lower formation enthalpy of TaB2 than ZrB2, in response to the chemical driving force to form a stoichiometric compound. The films with unique combination of nanosized crystalline cores and dense metallic-glass-like shells provide excellent mechanical properties.

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  • 6.
    Bakhit, Babak
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Palisaitis, Justinas
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Thörnberg, Jimmy
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Rosén, Johanna
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Persson, Per O A
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Petrov, Ivan
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering. Univ Illinois, IL 61801 USA; Natl Taiwan Univ Sci & Technol, Taiwan.
    Greene, Joseph E
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering. Univ Illinois, IL 61801 USA; Natl Taiwan Univ Sci & Technol, Taiwan.
    Greczynski, Grzegorz
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Improving the high-temperature oxidation resistance of TiB2 thin films by alloying with Al2020In: Acta Materialia, ISSN 1359-6454, E-ISSN 1873-2453, Vol. 196, p. 677-689Article in journal (Refereed)
    Abstract [en]

    Refractory transition-metal diborides (TMB2) are candidates for extreme environments due to melting points above 3000 degrees C, excellent hardness, good chemical stability, and thermal and electrical conductivity. However, they typically suffer from rapid high-temperature oxidation. Here, we study the effect of Al addition on the oxidation properties of sputter-deposited TiB2-rich Ti1-xAlxBy thin films and demonstrate that alloying the films with Al significantly increases the oxidation resistance with a slight decrease in hardness. TiB2.4 layers are deposited by dc magnetron sputtering (DCMS) from a TiB2 target, while Ti1-xAlxBy alloy films are grown by hybrid high-power impulse and dc magnetron co-sputtering (Al-HiPIMS/TiB2-DCMS). All as-deposited films exhibit columnar structure. The column boundaries of TiB2.4 are B-rich, while Ti0.68Al0.32B1.35 alloys have Ti-rich columns surrounded by a Ti(1-x)Al(x)By tissue phase which is predominantly Al rich. Air-annealing TiB2.4 at temperatures above 500 degrees C leads to the formation of oxide scales that do not contain B and mostly consist of a rutile-TiO2 (s) phase. The resulting oxidation products are highly porous due to the evaporation of B2O3 (g) phase as well as the coarsening of TiO2 crystallites. This poor oxidation resistance is significantly improved by alloying with Al. While air-annealing at 800 degrees C for 0.5 h results in the formation of an similar to 1900-nm oxide scale on TiB2.4, the thickness of the scale formed on the Ti0.68Al0.32B1.35 alloys is similar to 470 nm. The enhanced oxidation resistance is attributed to the formation of a dense, protective Al-containing oxide scale that considerably decreases the oxygen diffusion rate by suppressing the oxide-crystallites coarsening. (C) 2020 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

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  • 7.
    Bakhit, Babak
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Palisaitis, Justinas
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Wu, Zhengtao
    School of Electromechanical Engineering, Guangdong University of Technology, China.
    Sortica, Mauritio A.
    Applied Nuclear Physics, Department of Physics and Astronomy, Uppsala University, Sweden.
    Primetzhofer, Daniel
    Applied Nuclear Physics, Department of Physics and Astronomy, Uppsala University, Sweden.
    Persson, Per O. Å.
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Rosén, Johanna
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Petrov, Ivan
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering. Materials Research Laboratory and Department of Materials Science, University of Illinois, USA; Department of Materials Science and Engineering, National Taiwan University of Science and Technology, Taiwan.
    Greene, Joseph E.
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering. Materials Research Laboratory and Department of Materials Science, University of Illinois, USA; Department of Materials Science and Engineering, National Taiwan University of Science and Technology, Taiwan.
    Greczynski, Grzegorz
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Age hardening in superhard ZrB2-rich Zr1-xTaxBy thin films2021In: Scripta Materialia, ISSN 1359-6462, E-ISSN 1872-8456, Vol. 191, p. 120-125Article in journal (Refereed)
    Abstract [en]

    We recently showed that sputter-deposited Zr1-xTaxBy thin films have hexagonal AlB2-type columnar nanostructure in which column boundaries are B-rich for x < 0.2, while Ta-rich for x ≥ 0.2. As-deposited layers with x ≥ 0.2 exhibit higher hardness and, simultaneously, enhanced toughness. Here, we study the mechanical properties of ZrB2.4, Zr0.8Ta0.2B1.8, and Zr0.7Ta0.3B1.5 films annealed in Ar atmosphere as a function of annealing temperature Ta up to 1200 °C. In-situ and ex-situ nanoindentation analyses reveal that all films undergo age hardening up to Ta = 800 °C, with the highest hardness achieved for Zr0.8Ta0.2B1.8 (45.5±1.0 GPa). The age hardening, which occurs without any phase separation or decomposition, can be explained by point-defect recovery that enhances chemical bond density. Although hardness decreases at Ta > 800 °C due mainly to recrystallization, column coarsening, and planar defect annihilation, all layers show hardness values above 34 GPa over the entire Ta range.

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  • 8.
    Bakoglidis, Konstantinos
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering. Univ Manchester, England.
    Palisaitis, Justinas
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    dos Santos, Renato B.
    Univ Fed Bahia, Brazil.
    Rivelino, Roberto
    Univ Fed Bahia, Brazil.
    Persson, Per O A
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Gueorguiev, Gueorgui Kostov
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Self-Healing in Carbon Nitride Evidenced As Material Inflation and Superlubric Behavior2018In: ACS Applied Materials and Interfaces, ISSN 1944-8244, E-ISSN 1944-8252, Vol. 10, no 19, p. 16238-16243Article in journal (Refereed)
    Abstract [en]

    All known materials wear under extended mechanical contacting. Superlubricity may present solutions, but is an expressed mystery in C-based materials. We report negative wear of carbon nitride films; a wear-less condition with mechanically induced material inflation at the nanoscale and friction coefficient approaching ultralow values (0.06). Superlubricity in carbon nitride is expressed as C-N bond breaking for reduced coupling between graphitic-like sheets and eventual N-2 desorption. The transforming surface layer acts as a solid lubricant, whereas the film bulk retains its high elasticity. The present findings offer new means for materials design at the atomic level, and for property optimization in wear-critical applications like magnetic reading devices or nanomachines.

  • 9.
    Bangolla, Hemanth Kumar
    et al.
    Natl Taiwan Univ Sci & Technol, Taiwan.
    Siao, Ming-Deng
    Natl Taiwan Univ Sci & Technol, Taiwan.
    Huang, Yi-Hua
    Natl Taiwan Univ Sci & Technol, Taiwan.
    Chen, Ruei-San
    Natl Taiwan Univ Sci & Technol, Taiwan.
    Zukauskaite, Agne
    Fraunhofer Inst Organ Elect Electron Beam & Plasm, Germany.
    Palisaitis, Justinas
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Persson, Per O Å
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Birch, Jens
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Hsiao, Ching-Lien
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Composition-dependent photoconductivities in indium aluminium nitride nanorods grown by magnetron sputter epitaxy2022In: Nanoscale Advances, E-ISSN 2516-0230, Vol. 4, no 22, p. 4886-4894Article in journal (Refereed)
    Abstract [en]

    Photoconduction (PC) properties were investigated for ternary indium aluminium nitride (InxAl1-xN) nanorods (NRs) with different indium compositions (x) from 0.35 to 0.68, as grown by direct-current reactive magnetron sputter epitaxy. Cross-sectional scanning transmission electron microscopy (STEM) reveals single-crystal quality of the vertically aligned InxAl1-xN NRs. Single-rod photodetector devices with good ohmic contacts were fabricated using the focused-ion-beam technique (FIB), where the In-rich In0.68Al0.32N NR exhibits an optimal photocurrent responsivity of 1400 A W-1 and photoconductive gain of 3300. A transition from a positive photoresponse to a negative photoresponse was observed, while increasing the In composition x from 0.35 to 0.57. The negative PC was further enhanced by increasing x to 0.68. A model based on the coexistence and competition of deep electron trap states and recombination centers was proposed to explain the interesting composition-dependent PC in these ternary III-nitride 1D nanostructures.

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  • 10.
    Belaineh, Dagmawi
    et al.
    Linköping University, Department of Science and Technology, Laboratory of Organic Electronics. Linköping University, Faculty of Science & Engineering.
    Andreasen, Jens W.
    Tech Univ Denmark, Denmark.
    Palisaitis, Justinas
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Malti, Abdellah
    KTH Royal Inst Technol, Sweden; KTH Royal Inst Technol, Sweden.
    Håkansson, Karl
    RISE Bioecon, Sweden.
    Wagberg, Lars
    KTH Royal Inst Technol, Sweden; KTH Royal Inst Technol, Sweden.
    Crispin, Xavier
    Linköping University, Department of Science and Technology, Laboratory of Organic Electronics. Linköping University, Faculty of Science & Engineering.
    Engquist, Isak
    Linköping University, Department of Science and Technology, Laboratory of Organic Electronics. Linköping University, Faculty of Science & Engineering.
    Berggren, Magnus
    Linköping University, Department of Science and Technology, Laboratory of Organic Electronics. Linköping University, Faculty of Science & Engineering.
    Controlling the Organization of PEDOT:PSS on Cellulose Structures2019In: ACS APPLIED POLYMER MATERIALS, ISSN 2637-6105, Vol. 1, no 9, p. 2342-2351Article in journal (Refereed)
    Abstract [en]

    Composites of biopolymers and conducting polymers are emerging as promising candidates for a green technological future and are actively being explored in various applications, such as in energy storage, bioelectronics, and thermoelectrics. While the device characteristics of these composites have been actively investigated, there is limited knowledge concerning the fundamental intracomponent interactions and the modes of molecular structuring. Here, by use of cellulose and poly(3,4-ethylene-dioxythiophene):poly(styrenesulfonate) (PEDOT:PSS), it is shown that the chemical and structural makeup of the surfaces of the composite components are critical factors that determine the materials organization at relevant dimensions. AFM, TEM, and GIVVAXS measurements show that when mixed with cellulose nanofibrils, PEDOT:PSS organizes into continuous nanosized beadlike structures with an average diameter of 13 nm on the nanofibrils. In contrast, when PEDOT:PSS is blended with molecular cellulose, a phase-segregated conducting network morphology is reached, with a distinctly relatively lower electric conductivity. These results provide insight into the mechanisms of PEDOT:PSS crystallization and may have significant implications for the design of conducting biopolymer composites for a vast array of applications.

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  • 11.
    Chen, Jr-Tai
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Persson, Ingemar
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Nilsson, Daniel
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Hsu, Chih-Wei
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Palisaitis, Justinas
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Forsberg, Urban
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Persson, Per
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Janzén, Erik
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Room-Temperature mobility above 2200 cm2/V.s of two-dimensional electron gas in a sharp-interface AlGaN/GaN heterostructure2015In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 106, no 25, article id 251601Article in journal (Refereed)
    Abstract [en]

    A high mobility of 2250 cm2/V·s of a two-dimensional electron gas (2DEG) in a metalorganic chemical vapor deposition-grown AlGaN/GaN heterostructure was demonstrated. The mobility enhancement was a result of better electron confinement due to a sharp AlGaN/GaN interface, as confirmed by scanning transmission electron microscopy analysis, not owing to the formation of a traditional thin AlN exclusion layer. Moreover, we found that the electron mobility in the sharp-interface heterostructures can sustain above 2000 cm2/V·s for a wide range of 2DEG densities. Finally, it is promising that the sharp-interface AlGaN/GaN heterostructure would enable low contact resistance fabrication, less impurity-related scattering, and trapping than the AlGaN/AlN/GaN heterostructure, as the high-impurity-contained AlN is removed.

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  • 12.
    Chen, Yen-Ting
    et al.
    Academic Sinica, Taiwan .
    Araki, Tsutomu
    Ritsumeikan University, Japan .
    Palisaitis, Justinas
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Persson, Per O A
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Chen, Li-Chyong
    National Taiwan University, Taiwan .
    Chen, Kuei-Hsien
    Academic Sinica, Taiwan .
    Holtz, Per-Olof
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Birch, Jens
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Nanishi, Yasushi
    Ritsumeikan University, Japan .
    Nucleation of single GaN nanorods with diameters smaller than 35 nm by molecular beam epitaxy2013In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 103, no 20, p. 203108-Article in journal (Refereed)
    Abstract [en]

    Nucleation mechanism of catalyst-free GaN nanorod grown on Si(111) is investigated by the fabrication of uniform and narrow (andlt; 35 nm) nanorods without a pre-defined mask by molecular beam epitaxy. Direct evidences show that the nucleation of GaN nanorods stems from the sidewall of the underlying islands down to the Si(111) substrate, different from commonly reported ones on top of the island directly. Accordingly, the growth and density control of the nanorods is exploited by a "narrow-pass" approach that only narrow nanorod can be grown. The optimal size of surrounding non-nucleation area around single nanorod is estimated as 88 nm.

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  • 13.
    Chih-Wei, Chih-Wei
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
    Deminskyi, Petro
    Linköping University, Department of Physics, Chemistry and Biology, Chemistry. Linköping University, Faculty of Science & Engineering.
    Martinovic, Ivan
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
    Ivanov, Ivan Gueorguiev
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
    Palisaitis, Justinas
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Pedersen, Henrik
    Linköping University, Department of Physics, Chemistry and Biology, Chemistry. Linköping University, Faculty of Science & Engineering.
    Direct epitaxial nanometer-thin InN of high structural quality on 4H-SiC by atomic layer deposition2020In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 117, no 9, article id 093101Article in journal (Refereed)
    Abstract [en]

    Indium nitride (InN) is a highly promising material for high frequency electronics given its low bandgap and high electron mobility. The development of InN-based devices is hampered by the limitations in depositing very thin InN films of high quality. We demonstrate growth of high-structural-quality nanometer thin InN films on 4H-SiC by atomic layer deposition (ALD). High resolution x-ray diffraction and transmission electron microscopy show epitaxial growth and an atomically sharp interface between InN and 4H-SiC. The InN film is fully relaxed already after a few atomic layers and shows a very smooth morphology where the low surface roughness (0.14nm) is found to reproduce sub-nanometer surface features of the substrate. Raman measurements show an asymmetric broadening caused by grains in the InN film. Our results show the potential of ALD to prepare high-quality nanometer-thin InN films for subsequent formation of heterojunctions.

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  • 14.
    Dahlqvist, Martin
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Tao, Quanzheng
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Zhou, Jie
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Palisaitis, Justinas
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Persson, Per O A
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Rosén, Johanna
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Theoretical Prediction and Synthesis of a Family of Atomic Laminate Metal Borides with In-Plane Chemical Ordering2020In: Journal of the American Chemical Society, ISSN 0002-7863, E-ISSN 1520-5126, Vol. 142, no 43, p. 18583-18591Article in journal (Refereed)
    Abstract [en]

    All atomically laminated MAB phases (M = transition metal, A = A-group element, and B = boron) exhibit orthorhombic or tetragonal symmetry, with the only exception being hexagonal Ti2InB2. Inspired by the recent discovery of chemically ordered hexagonal carbides, i-MAX phases, we perform an extensive first-principles study to explore chemical ordering upon metal alloying of M2AlB2 (M from groups 3 to 9) in orthorhombic and hexagonal symmetry. Fifteen stable novel phases with in-plane chemical ordering are identified, coined i-MAB, along with 16 disordered stable alloys. The predictions are verified through the powder synthesis of Mo4/3Y2/3 AlB2 and Mo4/3Sc2/3AlB2 of space group R (3) over barm (no. 166), displaying the characteristic in-plane chemical order of Mo and Y/Sc and Kagome ordering of the Al atoms, as evident from X-ray diffraction and electron microscopy. The discovery of i-MAB phases expands the elemental space of these borides with M = Sc, Y, Zr, Hf, and Nb, realizing an increased property tuning potential of these phases as well as their suggested potential twodimensional derivatives.

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  • 15.
    Dahlqvist, Martin
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Zhou, Jie
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Persson, Ingemar
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Ahmed, Bilal
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Lu, Jun
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Halim, Joseph
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Tao, Quanzheng
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Palisaitis, Justinas
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Thörnberg, Jimmy
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Helmer, Pernilla
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Persson, Per O Å
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Rosén, Johanna
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Out-Of-Plane Ordered Laminate Borides and Their 2D Ti-Based Derivative from Chemical Exfoliation2021In: Advanced Materials, ISSN 0935-9648, E-ISSN 1521-4095, Vol. 33, no 38, article id 2008361Article in journal (Refereed)
    Abstract [en]

    Exploratory theoretical predictions in uncharted structural and compositional space are integral to materials discoveries. Inspired by M5SiB2 (T2) phases, the finding of a family of laminated quaternary metal borides, M M-4 SiB2, with out-of-plane chemical order is reported here. 11 chemically ordered phases as well as 40 solid solutions, introducing four elements previously not observed in these borides are predicted. The predictions are experimentally verified for Ti4MoSiB2, establishing Ti as part of the T2 boride compositional space. Chemical exfoliation of Ti4MoSiB2 and select removal of Si and MoB2 sub-layers is validated by derivation of a 2D material, TiOxCly, of high yield and in the form of delaminated sheets. These sheets have an experimentally determined direct band gap of approximate to 4.1 eV, and display characteristics suitable for supercapacitor applications. The results take the concept of chemical exfoliation beyond currently available 2D materials, and expands the envelope of 3D and 2D candidates, and their applications.

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  • 16.
    Ding, Haoming
    et al.
    Chinese Acad Sci, Peoples R China; Univ Chinese Acad Sci, Peoples R China; CNiTECH, Peoples R China.
    Li, Youbing
    Chinese Acad Sci, Peoples R China; CNiTECH, Peoples R China.
    Li, Mian
    Chinese Acad Sci, Peoples R China; CNiTECH, Peoples R China.
    Chen, Ke
    Chinese Acad Sci, Peoples R China; CNiTECH, Peoples R China.
    Liang, Kun
    Chinese Acad Sci, Peoples R China; CNiTECH, Peoples R China.
    Chen, Guoxin
    Chinese Acad Sci, Peoples R China; CNiTECH, Peoples R China.
    Lu, Jun
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Palisaitis, Justinas
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Persson, Per O A
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Eklund, Per
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Du, Shiyu
    Chinese Acad Sci, Peoples R China; Univ Chinese Acad Sci, Peoples R China; CNiTECH, Peoples R China.
    Chai, Zhifang
    Chinese Acad Sci, Peoples R China; Univ Chinese Acad Sci, Peoples R China; CNiTECH, Peoples R China.
    Gogotsi, Yury
    Drexel Univ, PA 19104 USA.
    Huang, Qing
    Chinese Acad Sci, Peoples R China; CNiTECH, Peoples R China; Adv Energy Sci & Technol Guangdong Lab, Peoples R China.
    Chemical scissor-mediated structural editing of layered transition metal carbides2023In: Science, ISSN 0036-8075, E-ISSN 1095-9203, Vol. 379, no 6637, p. 1130-1135Article in journal (Refereed)
    Abstract [en]

    Intercalated layered materials offer distinctive properties and serve as precursors for important two-dimensional (2D) materials. However, intercalation of non-van der Waals structures, which can expand the family of 2D materials, is difficult. We report a structural editing protocol for layered carbides (MAX phases) and their 2D derivatives (MXenes). Gap-opening and species-intercalating stages were respectively mediated by chemical scissors and intercalants, which created a large family of MAX phases with unconventional elements and structures, as well as MXenes with versatile terminals. The removal of terminals in MXenes with metal scissors and then the stitching of 2D carbide nanosheets with atom intercalation leads to the reconstruction of MAX phases and a family of metal-intercalated 2D carbides, both of which may drive advances in fields ranging from energy to printed electronics.

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  • 17.
    Dorri, Megan
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Thörnberg, Jimmy
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Hellgren, Niklas
    Messiah Univ, PA 17055 USA.
    Palisaitis, Justinas
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Petruhins, Andrejs
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Klimashin, Fedor
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Petrov, Ivan
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering. Univ Illinois, IL 61801 USA; Univ Illinois, IL 61801 USA; Natl Taiwan Univ Sci & Technol, Taiwan.
    Persson, Per O A
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Rosén, Johanna
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Synthesis and characterization of CrB 2 thin films grown by DC magnetron sputtering2021In: Scripta Materialia, ISSN 1359-6462, E-ISSN 1872-8456, Vol. 200, article id 113915Article in journal (Refereed)
    Abstract [en]

    CrB x thin films with 1.90 &lt; x &lt; 2.08 have been deposited by direct-current magnetron sputtering (DCMS) from a stoichiometric CrB 2 target at 5 and 20 mTorr (0.67 and 2.67 Pa) Ar pressure onto sapphire (0 0 01) substrates. All films, irrespective of deposition conditions, exhibit a (0 0 01) texture. Attesting to the achievement of close-to-stoichiometric composition, epitaxial film growth is observed at 900 ?C, while film growth at 500 ?C yields (0001) fiber texture. Film composition does not depend on substrate temperature but exhibits slightly reduced B content with increasing pressure for samples deposited at 900 ?C. Excess B in the overstoichiometric epitaxial CrB 2.08 films segregates to form B-rich inclusions. Understoichiometry in CrB 1.90 films is accommodated by Cr-rich stacking faults on { 1 1? 00 } prismatic planes. ? 2021 The Author(s). Published by Elsevier Ltd on behalf of Acta Materialia Inc. This is an open access article under the CC BY license ( http://creativecommons.org/licenses/by/4.0/ )

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  • 18.
    Dorri, Samira
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Birch, Jens
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Eriksson, Fredrik
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Palisaitis, Justinas
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Persson, Per O A
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Bakhit, Babak
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Ghafoor, Naureen
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Effects of stoichiometry and individual layer thickness ratio on the quality of epitaxial CrBx/TiBy superlattice thin films2023In: Materials & design, ISSN 0264-1275, E-ISSN 1873-4197, Vol. 228, article id 111842Article in journal (Refereed)
    Abstract [en]

    Studies of single crystal artificial superlattices (SLs) of transition-metal (TM) diborides, which is instru- mental to understand hardening mechanisms at nanoscale, is lacking. Here, CrBx/TiBy (0001) diboride SLs [x,y E 1.7-3.3] are grown epitaxially on Al2O3(0001) substrates by direct-current magnetron sputter epitaxy. Growth conditions for obtaining well-defined SLs with good interface quality are found at 4 mTorr Ar pressure and 600 degrees C. 1 -mu m-thick SL films deposited with modulation periods A between 1 and 10 nm, and A=6 nm SLs with TiBy-to-A layer thickness ratios F ranging from 0.2 to 0.8 are studied. SLs with A=6 nm and F in the range of 0.2-0.4, with a near stoichiometric B/TM ratio, exhibit the high- est structural quality. The effects of F and stoichiometries (B/TM ratio) on the distribution of B in the SL structures are discussed. By increasing the relative thickness of TiBy, the crystalline quality of SLs starts to deteriorate due to B segregation in over-stoichiometric TiBy, resulting in narrow epitaxial SL columnar growth with structurally-distorted B-rich boundaries. Moreover, increasing the relative thickness of under-stoichiometric CrBx enhances the SL quality and hinders formation of B-rich boundaries. The SLs are found to exhibit hardness values in the range of 29-34 GPa.(c) 2023 The Author(s). Published by Elsevier Ltd. This is an open access article under the CC BY license (http://creativecommons.org/licenses/by/4.0/).

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  • 19.
    Dorri, Samira
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Ghafoor, Naureen
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Palisaitis, Justinas
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Stendahl, Sjoerd
    Department of Physics and Astronomy, Material Physics, Uppsala University, Uppsala, Sweden.
    Devishvili, Anton
    Institut Laue-Langevin, Grenoble, France.
    Vorobiev, Alexei
    Department of Physics and Astronomy, Material Physics, Uppsala University, Uppsala, Sweden; Institut Laue-Langevin, Grenoble, France .
    Eriksson, Fredrik
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Persson, Per O.Å.
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Birch, Jens
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Enhanced quality of single crystal CrBx/TiBy diboride superlattices by controlling boron stoichiometry during sputter deposition2024In: Applied Surface Science, ISSN 0169-4332, E-ISSN 1873-5584, article id 159606Article in journal (Refereed)
    Abstract [en]

    Single-crystal CrB2/TiB2 diboride superlattices with well-defined layers are promising candidates for neutron optics. However, excess B in sputter-deposited TiBy using a single TiB2 target deteriorates the structural quality of CrBx/TiBy (0001) superlattices. We study the influence of co-sputtering of TiB2 + Ti on the stoichiometry and crystalline quality of 300-nm-thick TiBy single layers and CrBx/TiBy (0001) superlattices on Al2O3(0001) substrates grown by DC magnetron sputter epitaxy at growth-temperatures TS ranging from 600 to 900 °C. By controlling the relative applied powers to the TiB2 and Ti magnetrons, y could be reduced from 3.3 to 0.9. TiB2.3 grown at 750 °C exhibited epitaxial domains about 10x larger than non-co-sputtered films. Close-to-stoichiometry CrB1.7/TiB2.3 superlattices with modulation periods Λ = 6 nm grown at 750 °C showed the highest single crystal quality and best layer definition. TiB2.3 layers display rough top interfaces indicating kinetically limited growth while CrB1.7 forms flat and abrupt top interfaces indicating epitaxial growth with high adatom mobility.

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  • 20.
    Dorri, Samira
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Palisaitis, Justinas
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Greczynski, Grzegorz
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Petrov, Ivan
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering. University of Illinois at Urbana-Champaign, USA; National Taiwan University of Science and Technology, Taiwan.
    Birch, Jens
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Bakhit, Babak
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Oxidation kinetics of overstoichiometric TiB2 thin films grown by DC magnetron sputtering2022In: Corrosion Science, ISSN 0010-938X, E-ISSN 1879-0496, Vol. 206, article id 110493Article in journal (Refereed)
    Abstract [en]

    We systematically study the oxidation properties of sputter-deposited TiB2.5 coatings up to 700 °C. Oxide-scale thickness dox increases linearly with time ta for 300, 400, 500, and 700 °C, while an oxidation-protective behavior occurs with dox=250∙ta0.2 at 600 °C. Oxide-layer’s structure changes from amorphous to rutile/anatase-TiO2 at temperatures ≥ 500 °C. Abnormally low oxidation rate at 600 °C is attributed to a highly dense columnar TiO2-sublayer growing near oxide/film interface with a top-amorphous thin layer, suppressing oxygen diffusion. A model is proposed to explain the oxide-scale evolution at 600 °C. Decreasing heating rate to 1.0 °C/min plays a noticeable role in the TiB2.5 oxidation.

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  • 21.
    Ekström, Erik
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Elsukova, Anna
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Grasland, Justine
    IUT BloisUniv Francois Rabelais Tours, France.
    Palisaitis, Justinas
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Ramanath, Ganpati
    Rensselaer Polytech Inst, NY 12180 USA.
    Persson, Per
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Paul, Biplab
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Eriksson, Fredrik
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Le Febvrier, Arnaud
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Eklund, Per
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Epitaxial Growth of CaMnO3-y Films on LaAlO3 (112 over bar 0) by Pulsed Direct Current Reactive Magnetron Sputtering2022In: Physica Status Solidi. Rapid Research Letters, ISSN 1862-6254, E-ISSN 1862-6270, Vol. 16, no 4, article id 2100504Article in journal (Refereed)
    Abstract [en]

    CaMnO3 is a perovskite with attractive magnetic and thermoelectric properties. CaMnO3 films are usually grown by pulsed laser deposition or radio frequency magnetron sputtering from ceramic targets. Herein, epitaxial growth of CaMnO3-y (002) films on a (112 over bar 0)-oriented LaAlO3 substrate using pulsed direct current reactive magnetron sputtering is demonstrated, which is more suitable for industrial scale depositions. The CaMnO3-y shows growth with a small in-plane tilt of &lt;approximate to 0.2 degrees toward the (200) plane of CaMnO3-y and the (1 over bar 104) with respect to the LaAlO3 (112 over bar 0) substrate. X-ray photoelectron spectroscopy of the electronic core levels shows an oxygen deficiency described by CaMnO2.58 that yields a lower Seebeck coefficient and a higher electrical resistivity when compared to stoichiometric CaMnO3. The LaAlO3 (112 over bar 0) substrate promotes tensile-strained growth of single crystals. Scanning transmission electron microscopy and electron energy loss spectroscopy reveal antiphase boundaries composed of Ca on Mn sites along and , forming stacking faults.

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  • 22.
    Ekström, Erik
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Le Febvrier, Arnaud
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Bourgeois, F.
    Univ Technol Blois, France.
    Lundqvist, Björn
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
    Palisaitis, Justinas
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Persson, Per O A
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Caballero-Calero, O.
    CEI UAM, Spain.
    Martin-Gonzalez, M. S.
    CEI UAM, Spain.
    Klarbring, Johan
    Linköping University, Department of Physics, Chemistry and Biology, Theoretical Physics. Linköping University, Faculty of Science & Engineering.
    Simak, Sergey
    Linköping University, Department of Physics, Chemistry and Biology, Theoretical Physics. Linköping University, Faculty of Science & Engineering.
    Eriksson, Fredrik
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Paul, Biplab
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Eklund, Per
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    The effects of microstructure, Nb content and secondary Ruddlesden-Popper phase on thermoelectric properties in perovskite CaMn1-xNbxO3 (x=0-0.10) thin films2020In: RSC Advances, E-ISSN 2046-2069, RSC ADVANCES, Vol. 10, no 13, p. 7918-7926Article in journal (Refereed)
    Abstract [en]

    CaMn1-xNbxO3 (x = 0, 0.5, 0.6, 0.7 and 0.10) thin films have been grown by a two-step sputtering/annealing method. First, rock-salt-structured (Ca,Mn1-x,Nb-x)O thin films were deposited on 11 & x304;00 sapphire using reactive RF magnetron co-sputtering from elemental targets of Ca, Mn and Nb. The CaMn1-xNbxO3 films were then obtained by thermally induced phase transformation from rock-salt-structured (Ca,Mn1-xNbx)O to orthorhombic during post-deposition annealing at 700 degrees C for 3 h in oxygen flow. The X-ray diffraction patterns of pure CaMnO3 showed mixed orientation, while Nb-containing films were epitaxially grown in [101] out of-plane-direction. Scanning transmission electron microscopy showed a Ruddlesden-Popper (R-P) secondary phase in the films, which results in reduction of the electrical and thermal conductivity of CaMn1-xNbxO3. The electrical resistivity and Seebeck coefficient of the pure CaMnO3 film were measured to 2.7 omega cm and -270 mu V K-1 at room temperature, respectively. The electrical resistivity and Seebeck coefficient were reduced by alloying with Nb and was measured to 0.09 omega cm and -145 mu V K-1 for x = 0.05. Yielding a power factor of 21.5 mu W K-2 m(-1) near room temperature, nearly eight times higher than for pure CaMnO3 (2.8 mu W K-2 m(-1)). The power factors for alloyed samples are low compared to other studies on phase-pure material. This is due to high electrical resistivity originating from the secondary R-P phase. The thermal conductivity of the CaMn1-xNbxO3 films is low for all samples and is the lowest for x = 0.07 and 0.10, determined to 1.6 W m(-1) K-1. The low thermal conductivity is attributed to grain boundary scattering and the secondary R-P phase.

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  • 23.
    ElMeligy, Tarek Aly
    et al.
    Drexel Univ, PA 19104 USA.
    Kota, Sankalp
    Drexel Univ, PA 19104 USA.
    Natu, Varun
    Drexel Univ, PA 19104 USA.
    Lind, Hans
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Palisaitis, Justinas
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Persson, Per O A
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Rosén, Johanna
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Barsoum, Michel
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering. Drexel Univ, PA 19104 USA.
    Synthesis, characterization, properties, first principles calculations, and X-ray photoelectron spectroscopy of bulk Mn5SiB2 and Fe5SiB2 ternary borides2021In: Journal of Alloys and Compounds, ISSN 0925-8388, E-ISSN 1873-4669, Vol. 888, article id 161377Article in journal (Refereed)
    Abstract [en]

    Herein, we synthesize fully dense, bulk, predominantly single-phase, polycrystalline samples of the layered ternary transition metal borides Mn5SiB2 and Fe5SiB2 by reactively hot-pressing Mn, Fe, FeB, Si, and B powders. The atomic structures were imaged using high-resolution scanning transmission electron mi-croscopy and revealed high-crystal quality. Elongated striped defects, confined below the nanometer in width, were observed. Selected area electron diffraction further accentuates the high-crystal quality by discrete spots of pattern, that is expected from a tetragonal crystal structure along the [001] zone axis. With Vickers hardness values of 12.1 +/- 0.4 GPa, and 12.7 +/- 0.1 GPa, for Mn5SiB2 and Fe5SiB2 respectively, these borides are relatively soft. The room temperature electrical resistivities were 1.5 +/- 0.1 and 1.2 +/- 0.1 mu Omega m, for Mn5SiB2 and Fe5SiB2, respectively. The binding energies of the Mn, Fe and Si measured by X-ray photoelectron spectroscopy bolster the idea that the bonds are quite metallic in character. Density functional theory (DFT) calculations confirm that the ground states of both compounds are ferromagnetic as observed experimentally. We also use DFT to predict the elastic and electronic properties. In both compounds, the density of states at the Fermi level are dominated by the d-orbitals of the transition metals. Neither material was readily machinable with conventional tooling, but is so with sharp cobalt steel bits or electro-discharge machining (EDM). (C) 2021 Elsevier B.V. All rights reserved.

  • 24.
    Etman, Ahmed
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Materials design. Linköping University, Faculty of Science & Engineering.
    Halim, Joseph
    Linköping University, Department of Physics, Chemistry and Biology, Materials design. Linköping University, Faculty of Science & Engineering.
    Lind, Hans
    Linköping University, Department of Physics, Chemistry and Biology, Materials design. Linköping University, Faculty of Science & Engineering.
    Dorri, Megan
    Linköping University, Department of Physics, Chemistry and Biology, Materials design. Linköping University, Faculty of Science & Engineering.
    Palisaitis, Justinas
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Lu, Jun
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Persson, Per O A
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Rosén, Johanna
    Linköping University, Department of Physics, Chemistry and Biology, Materials design. Linköping University, Faculty of Science & Engineering.
    Computationally Driven Discovery of Quaternary Tantalum-Based MAB-Phases: Ta4M & DPRIME;SiB2 (M & DPRIME; = V, Cr, or Mo): Synthesis, Characterization, and Elastic Properties2023In: Crystal Growth & Design, ISSN 1528-7483, E-ISSN 1528-7505, Vol. 23, no 6, p. 4442-4447Article in journal (Refereed)
    Abstract [en]

    Out-of-plane chemically ordered transitionmetal boride(o-MAB) phases, Ta4M & DPRIME;SiB2 (M & DPRIME; = V, Cr), and a structurally equivalent disordered solidsolution MAB phase, Ta4MoSiB2, are synthesized.DFT calculations are used to examine the dynamic stability, elasticproperties, and electronic density states of the MAB phases. We report on the synthesis of computationally predictedout-of-planechemically ordered transition metal borides labeled o-MAB phases, Ta4M & DPRIME;SiB2 (M & DPRIME; =V, Cr), and a structurally equivalent disordered solid solution MABphase Ta4MoSiB2. The boride phases were preparedusing solid-state reaction sintering of the constituting elements.High-resolution scanning transmission electron microscopy along withRietveld refinement of the powder-X-ray diffraction patterns revealedthat the synthesized o-MAB phases Ta4CrSiB2 (98 wt % purity) and Ta4VSiB2 (81 wt% purity) possess chemical ordering with Ta preferentially residingin the 16l position and Cr and V in the 4c position, whereas Ta4MoSiB2 (46wt % purity) was concluded to form a disordered solid solution. Densityfunctional theory (DFT) calculations were used to investigate thedynamic stability, elastic properties, and electronic density statesfor the MAB phases, confirming the stability and suggesting the boridesbased on Cr and Mo to be stiffer than those based on V and Nb.

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  • 25.
    Fallqvist, Amie
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Olovsson, Weine
    Linköping University, Faculty of Science & Engineering. Linköping University, Department of Physics, Chemistry and Biology, Theoretical Physics.
    Alling, Björn
    Linköping University, Department of Physics, Chemistry and Biology, Theoretical Physics. Linköping University, Faculty of Science & Engineering. Max Planck Inst Eisenforsch GmbH, Germany.
    Palisaitis, Justinas
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Belov, M. P.
    Natl Univ Sci and Technol MISIS, Russia.
    Abrikosov, Igor
    Linköping University, Department of Physics, Chemistry and Biology, Theoretical Physics. Linköping University, Faculty of Science & Engineering.
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Persson, Per O A
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Resolving the debated atomic structure of the metastable cubic SiNx tissue phase in nanocomposites with TiN2018In: Physical Review Materials, E-ISSN 2475-9953, Vol. 2, no 9, article id 093608Article in journal (Refereed)
    Abstract [en]

    The TiN/SiNx nanocomposite and nanolaminate systems are the archetype for super if not ultrahard materials. Yet, the nature of the SiNx tissue phase is debated. Here, we show by atomically resolved electron microscopy methods that SiNx is epitaxially stabilized in a NaCl structure on the adjacent TiN(001) surfaces. Additionally, electron energy loss spectroscopy, supported by first-principles density functional theory calculations infer that SiNx hosts Si vacancies.

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  • 26.
    Fashandi, Hossein
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Dahlqvist, Martin
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Lu, Jun
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Palisaitis, Justinas
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Simak, Sergey
    Linköping University, Department of Physics, Chemistry and Biology, Theoretical Physics. Linköping University, Faculty of Science & Engineering.
    Abrikosov, Igor
    Linköping University, Department of Physics, Chemistry and Biology, Theoretical Physics. Linköping University, Faculty of Science & Engineering.
    Rosén, Johanna
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Andersson, Mike
    Linköping University, Department of Physics, Chemistry and Biology, Applied Sensor Science. Linköping University, Faculty of Science & Engineering.
    Lloyd Spetz, Anita
    Linköping University, Department of Physics, Chemistry and Biology, Applied Sensor Science. Linköping University, Faculty of Science & Engineering.
    Eklund, Per
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Synthesis of Ti3AuC2, Ti3Au2C2 and Ti3IrC2 by noble metal substitution reaction in Ti3SiC2 for high-temperature-stable Ohmic contacts to SiC2017In: Nature Materials, ISSN 1476-1122, E-ISSN 1476-4660, Vol. 16, no 8, p. 814-818Article in journal (Refereed)
    Abstract [en]

    The large class of layered ceramics encompasses both van der Waals (vdW) and non-vdW solids. While intercalation of noble metals in vdW solids is known, formation of compounds by incorporation of noble-metal layers in non-vdW layered solids is largely unexplored. Here, we show formation of Ti3AuC2 and Ti3Au2C2 phases with up to 31% lattice swelling by a substitutional solid-state reaction of Au into Ti3SiC2 single-crystal thin films with simultaneous out-diffusion of Si. Ti3IrC2 is subsequently produced by a substitution reaction of Ir for Au in Ti3Au2C2. These phases form Ohmic electrical contacts to SiC and remain stable after 1,000 h of ageing at 600 degrees C in air. The present results, by combined analytical electron microscopy and ab initio calculations, open avenues for processing of noble-metal-containing layered ceramics that have not been synthesized from elemental sources, along with tunable properties such as stable electrical contacts for high-temperature power electronics or gas sensors.

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  • 27.
    Filippov, Stanislav
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials. Linköping University, Faculty of Science & Engineering.
    Jansson, Mattias
    Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials. Linköping University, Faculty of Science & Engineering.
    Stehr, Jan Eric
    Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials. Linköping University, Faculty of Science & Engineering.
    Palisaitis, Justinas
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Persson, Per O. Å.
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Ishikawa, Fumitaro
    Graduate School of Science and Engineering, Ehime University, Matsuyama, Japan.
    Chen, Weimin M.
    Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials. Linköping University, Faculty of Science & Engineering.
    Buyanova, Irina A.
    Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials. Linköping University, Faculty of Science & Engineering.
    Strongly polarized quantum-dot-like light emitters embedded in GaAs/GaNAs core/shell nanowires2016In: Nanoscale, ISSN 2040-3364, E-ISSN 2040-3372, Vol. 8, no 35, p. 15939-15947Article in journal (Refereed)
    Abstract [en]

    Recent developments in fabrication techniques and extensive investigations of the physical properties of III-V semiconductor nanowires (NWs), such as GaAs NWs, have demonstrated their potential for a multitude of advanced electronic and photonics applications. Alloying of GaAs with nitrogen can further enhance the performance and extend the device functionality via intentional defects and heterostructure engineering in GaNAs and GaAs/GaNAs coaxial NWs. In this work, it is shown that incorporation of nitrogen in GaAs NWs leads to formation of three-dimensional confining potentials caused by short-range fluctuations in the nitrogen composition, which are superimposed on long-range alloy disorder. The resulting localized states exhibit a quantum-dot like electronic structure, forming optically active states in the GaNAs shell. By directly correlating the structural and optical properties of individual NWs, it is also shown that formation of the localized states is efficient in pure zinc-blende wires and is further facilitated by structural polymorphism. The light emission from these localized states is found to be spectrally narrow (similar to 50-130 mu eV) and is highly polarized (up to 100%) with the preferable polarization direction orthogonal to the NW axis, suggesting a preferential orientation of the localization potential. These properties of self-assembled nano-emitters embedded in the GaNAs-based nanowire structures may be attractive for potential optoelectronic applications.

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  • 28.
    Folkenant, M.
    et al.
    Uppsala University, Uppsala, Sweden.
    Nygren, K.
    Uppsala University, Uppsala, Sweden; Impact Coatings AB, Linköping, Sweden.
    Malinovskis, P.
    Uppsala University, Uppsala, Sweden.
    Palisaitis, Justinas
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Persson, Per O. Å.
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Lewin, E.
    Uppsala University, Uppsala, Sweden.
    Jansson, U.
    Uppsala University, Uppsala, Sweden.
    Structure and properties of Cr–C/Ag films deposited by magnetron sputtering2015In: Surface & Coatings Technology, ISSN 0257-8972, E-ISSN 1879-3347, Vol. 281, p. 184-192Article in journal (Refereed)
    Abstract [en]

    Cr–C/Ag thin films with 0–14 at.% Ag have been deposited by magnetron sputtering from elemental targets. The samples were analyzed by X-ray diffraction, transmission electron microscopy, X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM) to study their structure and chemical bonding. A complex nanocomposite structure consisting of three phases; nanocrystalline Ag, amorphous CrCx and amorphous carbon is reported. The carbon content in the amorphous carbide phase was determined to be 32–33 at.% C, independent of Ag content. Furthermore, SEM and XPS results showed higher amounts of Ag on the surface compared to the bulk. The hardness and Young's modulus were reduced from 12 to 8 GPa and from 270 to 170 GPa, respectively, with increasing Ag content. The contact resistance was found to decrease with Ag addition, with the most Ag rich sample approaching the values of an Ag reference sample. Initial tribological tests gave friction coefficients in the range of 0.3 to 0.5, with no clear trends. Annealing tests show that the material is stable after annealing at 500 °C for 1 h, but not after annealing at 800 °C for 1 h. In combination, these results suggest that sputtered Cr–C/Ag films could be potentially applicable for electric contact applications.

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  • 29.
    Folkenant, M.
    et al.
    Department of Chemistry, Ångström Laboratory, Uppsala University, Uppsala, Sweden.
    Nygren, K.
    Department of Chemistry, Ångström Laboratory, Uppsala University, Uppsala, Sweden; Impact Coatings AB, Linköping, Sweden.
    Malinovskis, Paulius
    Department of Chemistry, Ångström Laboratory, Uppsala University, Uppsala, Sweden.
    Palisaitis, Justinas
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Persson, Per O.Å .
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Lewin, E.
    Department of Chemistry, Ångström Laboratory, Uppsala University, Uppsala, Sweden.
    Jansson, U.
    Department of Chemistry, Ångström Laboratory, Uppsala University, Uppsala, Sweden.
    Structure and properties of Cr–C/Ag films deposited by magnetron sputtering2015In: Surface & Coatings Technology, ISSN 0257-8972, E-ISSN 1879-3347, Vol. 281, p. 184-192Article in journal (Refereed)
    Abstract [en]

    Cr–C/Ag thin films with 0–14 at.% Ag have been deposited by magnetron sputtering from elemental targets. The samples were analyzed by X-ray diffraction, transmission electron microscopy, X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM) to study their structure and chemical bonding. A complex nanocomposite structure consisting of three phases; nanocrystalline Ag, amorphous CrCx and amorphous carbon is reported. The carbon content in the amorphous carbide phase was determined to be 32–33 at.% C, independent of Ag content. Furthermore, SEM and XPS results showed higher amounts of Ag on the surface compared to the bulk. The hardness and Young's modulus were reduced from 12 to 8 GPa and from 270 to 170 GPa, respectively, with increasing Ag content. The contact resistance was found to decrease with Ag addition, with the most Ag rich sample approaching the values of an Ag reference sample. Initial tribological tests gave friction coefficients in the range of 0.3 to 0.5, with no clear trends. Annealing tests show that the material is stable after annealing at 500 °C for 1 h, but not after annealing at 800 °C for 1 h. In combination, these results suggest that sputtered Cr–C/Ag films could be potentially applicable for electric contact applications.

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  • 30.
    Ghafoor, Naureen
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Dorri, Samira
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Palisaitis, Justinas
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Rogström, Lina
    Linköping University, Department of Physics, Chemistry and Biology, Nanostructured Materials. Linköping University, Faculty of Science & Engineering.
    Bakhit, Babak
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Greczynski, Grzegorz
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Birch, Jens
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Phase separation paths in metastable Zr1-xAlxN monolithic layers compared to multilayers with TiN: Growth versus annealing temperatures2023In: Materialia, E-ISSN 2589-1529, Vol. 28, article id 101758Article in journal (Refereed)
    Abstract [en]

    Metastable super-saturated Zr1_xAlxN alloys tend to phase separate into the equilibrium cubic (c) ZrN and wurtzite (w) AlN due to a deep miscibility gap. Transformation is shown here to follow distinctly different paths depending on if Zr1_xAlxN (x = 0.3 and 0.6) is sputter deposited as a single layer or multi-layered with TiN, and further varied by post-deposition annealing. Using in situ high-energy synchrotron wide-angle X-ray scattering and analytical transmission electron microscopy, surface segregation effects are compared to secondary phase transformations occurring in as-deposited layers during thermal annealing up to 1000 degrees C. For the primary phase transformation from the vapor phase, w-AlN nucleates and an AlN-ZrN labyrinthine structure evolves at elevated deposition temperature with semi-coherent interfaces over several nanometers, where the higher Al content narrows the structure in both single and multilayers. Transformation in thinner alloy layers is governed by epitaxial forces which stabilize single-phase c-Zr0.4Al0.6N, which enables c-Zr0.4Al0.6N/TiN superlattice growth at temperatures as low as 350 degrees C. Regardless of the decomposition route, the formation of c-AlN is impeded and w-AlN instantaneously forms during transformation. In contrast, isostructural decomposition into w-AlN and w-Zr (Al)N occurs in w-Zr0.4Al0.6N alloys during annealing.

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  • 31.
    Ghafoor, Naureen
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Petrov, Ivan
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering. Univ Illinois, IL 61801 USA; Univ Illinois, IL 61801 USA.
    Holec, D.
    Univ Leoben, Austria.
    Greczynski, Grzegorz
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Palisaitis, Justinas
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Persson, Per O A
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Birch, Jens
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Self-structuring in Zr1-xAlxN films as a function of composition and growth temperature2018In: Scientific Reports, E-ISSN 2045-2322, Vol. 8, article id 16327Article in journal (Refereed)
    Abstract [en]

    Nanostructure formation via surface-diffusion-mediated segregation of ZrN and AIN in Zr1-xAlxN films during high mobility growth conditions is investigated for 0 amp;lt;= x amp;lt;= 1. The large immiscibility combined with interfacial surface and strain energy balance resulted in a hard nanolabyrinthine lamellar structure with well-defined (semi) coherent c-ZrN and w-AlN domains of sub-nm to similar to 4 nm in 0.2 amp;lt;= x amp;lt;= 0.4 films, as controlled by atom mobility. For high AlN contents (x amp;gt; 0.49) Al-rich ZrN domains attain wurtzite structure within fine equiaxed nanocomposite wurtzite lattice. Slow diffusion in wurtzite films points towards crystal structure dependent driving force for decomposition. The findings of unlikelihood of isostructural decomposition in c-Zr1-xAlxN, and stability of w-Zr1-xAlxN (in large x films) is complemented with first principles calculations.

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  • 32.
    Halim, Joseph
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Etman, Ahmed
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Elsukova, Anna
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Polcik, Peter
    Plansee Composite Mat GmbH, Germany.
    Palisaitis, Justinas
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Barsoum, Michel
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering. Drexel Univ, PA 19104 USA.
    Persson, Per O A
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Rosén, Johanna
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Tailored synthesis approach of (Mo2/3Y1/3)(2)AlC i-MAX and its two-dimensional derivative Mo1.33CTz MXene: enhancing the yield, quality, and performance in supercapacitor applications2021In: Nanoscale, ISSN 2040-3364, E-ISSN 2040-3372, Vol. 13, no 1, p. 311-319Article in journal (Refereed)
    Abstract [en]

    A vacancy-ordered MXene, Mo1.33CTz, obtained from the selective etching of Al and Sc from the parent i-MAX phase (Mo2/3Sc1/3)(2)AlC has previously shown excellent properties for supercapacitor applications. Attempts to synthesize the same MXene from another precursor, (Mo2/3Y1/3)(2)AlC, have not been able to match its forerunner. Herein, we show that the use of an AlY2.3 alloy instead of elemental Al and Y for the synthesis of (Mo2/3Y1/3)(2)AlC i-MAX, results in a close to 70% increase in sample purity due to the suppression of the main secondary phase, Mo3Al2C. Furthermore, through a modified etching procedure, we obtain a Mo1.33CTz MXene of high structural quality and improve the yield by a factor of 6 compared to our previous efforts. Free-standing films show high volumetric (1308 F cm(-3)) and gravimetric (436 F g(-1)) capacitances and a high stability (98% retention) at the level of, or even beyond, those reported for the Mo1.33CTz MXene produced from the Sc-based i-MAX. These results are of importance for the realization of high quality MXenes through use of more abundant elements (Y vs. Sc), while also reducing waste (impurity) material and facilitating the synthesis of a high-performance material for applications.

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  • 33.
    Halim, Joseph
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Materials design. Linköping University, Faculty of Science & Engineering.
    Helmer, Pernilla
    Linköping University, Department of Physics, Chemistry and Biology, Materials design. Linköping University, Faculty of Science & Engineering.
    Palisaitis, Justinas
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Dahlqvist, Martin
    Linköping University, Department of Physics, Chemistry and Biology, Materials design. Linköping University, Faculty of Science & Engineering.
    Thörnberg, Jimmy
    Linköping University, Department of Physics, Chemistry and Biology, Materials design. Linköping University, Faculty of Science & Engineering.
    Persson, Per O A
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Rosén, Johanna
    Linköping University, Department of Physics, Chemistry and Biology, Materials design. Linköping University, Faculty of Science & Engineering.
    Experimental and Theoretical Investigations of Out-of-Plane Ordered Nanolaminate Transition Metal Borides: M4CrSiB2 (M = Mo, W, Nb)2023In: Inorganic Chemistry, ISSN 0020-1669, E-ISSN 1520-510X, Vol. 62, no 14, p. 5341-5347Article in journal (Refereed)
    Abstract [en]

    We report the synthesis of three out-of-plane chemically ordered quaternary transition metal borides (o-MAB phases) of the chemical formula M4CrSiB2 (M = Mo, W, Nb). The addition of these phases to the recently discovered o-MAB phase Ti4MoSiB2 shows that this is indeed a new family of chemically ordered atomic laminates. Furthermore, our results expand the attainable chemistry of the traditional M5SiB2 MAB phases to also include Cr. The crystal structure and chemical ordering of the produced materials were investigated using high-resolution scanning transmission electron microscopy and X-ray diffraction by applying Rietveld refinement. Additionally, calculations based on density functional theory were performed to investigate the Cr preference for occupying the minority 4c Wyckoff site, thereby inducing chemical order.

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  • 34.
    Halim, Joseph
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Palisaitis, Justinas
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Lu, Jun
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Thörnberg, Jimmy
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    E. J., Moon
    Department of Materials Science and Engineering, Drexel University, Philadelphia, Pennsylvania 19104, United States.
    M., Precner
    Institute of Electrical Engineering, Slovak Academy of Sciences, Bratislava 84104, Slovak Republic.
    Eklund, Per
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Persson, Per O. Å.
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    M. W., Barsoum
    Department of Materials Science and Engineering, Drexel University, Philadelphia, Pennsylvania 19104, United States.
    Rosén, Johanna
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Synthesis of Two-Dimensional Nb1.33C (MXene) with Randomly Distributed Vacancies by Etching of the Quaternary Solid Solution (Nb2/3Sc1/3)2AlC MAX Phase2018In: ACS Applied Nano Materials, ISSN 2574-0970, Vol. 1, no 6, p. 2455-2460Article in journal (Refereed)
    Abstract [en]

    Introducing point defects in two-dimensional (2D) materials can alter or enhance their properties. Here, we demonstrate how etching a laminated (Nb2/3Sc1/3)2AlC MAX phase (solid solution) of both the Sc and Al atoms results in a 2D Nb1.33C material (MXene) with a large number of vacancies and vacancy clusters. This method is applicable to any quaternary, or higher, MAX phase, wherein one of the transition metals is more reactive than the other and could be of vital importance in applications such as catalysis and energy storage. We also report, for the first time, on the existence of solid solution (Nb2/3Sc1/3)3AlC2 and (Nb2/3Sc1/3)4AlC3 phases.

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  • 35.
    Hellgren, Niklas
    et al.
    Messiah Univ, PA 17055 USA.
    Sredenschek, Alexander
    Messiah Univ, PA 17055 USA; Penn State Univ, PA 16801 USA.
    Petruhins, Andrejs
    Linköping University, Department of Physics, Chemistry and Biology, Materials design. Linköping University, Faculty of Science & Engineering.
    Palisaitis, Justinas
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Klimashin, Fedor
    Linköping University, Department of Physics, Chemistry and Biology, Materials design. Linköping University, Faculty of Science & Engineering. EMPA, Switzerland.
    Sortica, Maurico A.
    Uppsala Univ, Sweden.
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Persson, Per O Å
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Rosén, Johanna
    Linköping University, Department of Physics, Chemistry and Biology, Materials design. Linköping University, Faculty of Science & Engineering.
    Synthesis and characterization of TiBx (1.2 ≤ x ≤ 2.8) thin films grown by DC magnetron co-sputtering from TiB2 and Ti targets2022In: Surface & Coatings Technology, ISSN 0257-8972, E-ISSN 1879-3347, Vol. 433, article id 128110Article in journal (Refereed)
    Abstract [en]

    Titanium boride, TiBx, thin films were grown by direct current magnetron co-sputtering from a compound TiB2 target and a Ti target at an Ar pressure of 2.2 mTorr (0.3 Pa) and substrate temperature of 450 ?degrees C. While keeping the power of the TiB2 target constant at 250 W, and by varying the power on the Ti target, P-Ti, between 0 and 100 W, the B/Ti ratio in the film could be continuously and controllably varied from 1.2 to 2.8, with close-tostoichiometric diboride films achieved for P-Ti = 50 W. This was done without altering the deposition pressure, which is otherwise the main modulator for the composition of magnetron sputtered TiBx diboride thin films. The film structure and properties of the as-deposited films were compared to those after vacuum-annealing for 2 h at 1100 ?degrees C. As-deposited films consisted of small (?50 nm) randomly oriented TiB2 crystallites, interspersed in an amorphous, sometimes porous tissue phase. Upon annealing, some of the tissue phase crystallized, but the diboride average grain size did not change noticeably. The near-stoichiometric film had the lowest resistivity, 122 mu omega cm, after annealing. Although this film had growth-induced porosity, an interconnected network of elongated crystallites provides a path for conduction. All films exhibited high hardness, in the 25-30 GPa range, where the highest value of similar to 32 GPa was obtained for the most Ti-rich film after annealing. This film had the highest density and was nano-crystalline, where dislocation propagation is interrupted by the off-stoichiometric grain boundaries.

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  • 36.
    Henry, Anne
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Lundskog, Anders
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Palisaitis, Justinas
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Ivanov, Ivan
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Kakanakova-Georgieva, Anelia
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    Forsberg, Urban
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Persson, Per
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Janzén, Erik
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    AlGaN Multiple Quantum Wells and AlN Grown in a Hot-wall MOCVD for Deep UV Applications2009In: ECS Transactions, Vol. 25, Iss. 8, ECS , 2009, p. 837-844Conference paper (Refereed)
    Abstract [en]

    AlxGa1-xN multiple quantum wells (MQW) were grown on AlN epilayer grown on 4H-SiC substrate. The growth was performed without interruption in a horizontal hot-wall MOCVD reactor using a mixture of hydrogen and nitrogen as carrier gases. The precursors were ammonia, trimethylaluminum and trimethylgallium. Results obtained from X-ray diffraction and infra-red reflectance were used to obtain the composition of the films when growing simple AlxGa1 xN layer. Visible reflectance was used to evaluate the thickness of the films. Finally the MQW parameters as thicknesses and composition variation were obtained by scanning transmission electron microscopy and demonstrated an agreement with the growth parameters used

  • 37.
    Hsiao, Ching-Lien
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Magnusson, Roger
    Linköping University, Department of Physics, Chemistry and Biology, Applied Optics . Linköping University, The Institute of Technology.
    Palisaitis, Justinas
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Sandström, Per
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Persson, Per O. Å.
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Valyukh, Sergiy
    Linköping University, Department of Physics, Chemistry and Biology, Applied Optics . Linköping University, The Institute of Technology.
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Järrendahl, Kenneth
    Linköping University, Department of Physics, Chemistry and Biology, Applied Optics . Linköping University, The Institute of Technology.
    Birch, Jens
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Curved-Lattice Epitaxial Growth of InxAl1-xN Nanospirals with Tailored Chirality2015In: Nano letters (Print), ISSN 1530-6984, E-ISSN 1530-6992, Vol. 15, no 1, p. 294-300Article in journal (Refereed)
    Abstract [en]

    Chirality, tailored by external morphology and internal composition, has been realized by controlled curved-lattice epitaxial growth (CLEG) of uniform coatings of single-crystalline InxAl1-xN nanospirals. The nanospirals are formed by sequentially stacking segments of curved nanorods on top of each other, where each segment is incrementally rotated around the spiral axis. By controlling the growth rate, segment length, rotation direction, and incremental rotation angle, spirals are tailored to predetermined handedness, pitch, and height.  The curved morphology of the segments is a result of a lateral compositional gradient across the segments while maintaining a preferred crystallographic growth direction, implying a lateral gradient in optical properties as well. Left- and right-handed nanospirals, tailored with 5 periods of 200 nm pitch, as confirmed by scanning electron microscopy, exhibit uniform spiral diameters of ~80 nm (local segment diameters of ~60 nm) with tapered hexagonal tips.  High resolution electron microscopy, in combination with nanoprobe energy dispersive X-ray spectroscopy and valence electron energy loss spectroscopy, show that individual nanospirals consist of an In-rich core with ~15 nm-diameter hexagonal cross-section, comprised of curved basal planes. The core is surrounded by an Al-rich shell with a thickness asymmetry spiraling along the core. The ensemble nanospirals, across the 1 cm2 wafers, show high in-plane ordering with respect to shape, crystalline orientation, and direction of compositional gradient. Mueller matrix spectroscopic ellipsometry shows that the tailored chirality is manifested in the polarization state of light reflected off the CLEG nanospiral-coated wafers. In that, the polarization state is shown to be dependent on the handedness of the nanospirals and the wavelength of the incident light in the ultraviolet-visible region.

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  • 38.
    Hsiao, Ching-Lien
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Magnusson, Roger
    Linköping University, Department of Physics, Chemistry and Biology, Applied Optics . Linköping University, The Institute of Technology.
    Palisaitis, Justinas
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Sandström, Per
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Valyukh, Sergiy
    Linköping University, Department of Physics, Chemistry and Biology, Applied Optics . Linköping University, The Institute of Technology.
    Persson, Per
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Järrendahl, Kenneth
    Linköping University, Department of Physics, Chemistry and Biology, Applied Optics . Linköping University, The Institute of Technology.
    Birch, Jens
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Curved-lattice epitaxial growth of chiral AlInN twisted nanorods for optical applications2012Manuscript (preprint) (Other academic)
    Abstract [en]

    Despite of using chiral metamaterials to manipulate light polarization states has been demonstrated their great potential for applications such as invisible cloaks, broadband or wavelength-tunable circular polarizers, microreflectors, etc. in the past decade [1-6], operating wavelength in ultraviolet-visible range is still a challenge issue. Since these chiral structures often consist of metallic materials, their operation is designed for the infrared and microwave regions [2-4]. Here, we show how a controlled curved-lattice epitaxial growth (CLEG) of wide-bandgap AlInN semiconductor curved nanocrystals [7] can be exploited as a novel route for tailoring chiral nanostructures in the form of twisted nanorods (TNRs). The fabricated TNRs are shown to reflect light with a high degree of polarization as well as a high degree of circular polarization (that is, nearly circularly polarized light) in the ultravioletvisible region. The obtained polarization is shown to be dependent on the handedness of the TNRs.

  • 39.
    Hsiao, Ching-Lien
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Palisaitis, Justinas
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Junaid, Muhammad
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Chen, Ruei-San
    Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
    Persson, Per O.Å.
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Sandström, Per
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Holtz, Per-Olof
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Birch, Jens
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Composition tunable Al1-xInxN nanorod arrays grown by ultra-high-vacuum magnetron sputter epitaxy2011Manuscript (preprint) (Other academic)
    Abstract [en]

    Self-assembled ternary Al1-xInxN nanorod arrays with variable In concentration, 0.10 ≤ x ≤ 0.32 have been realized onto c-plane sapphire substrates by ultra-high-vacuum magnetron sputter epitaxy with Ti0.21Zr0.79N or VN seed layers assistance. The formation of nanorods was very sensitive to the applied seed layer. Without proper seed layer assistance a continuous Al1-xInxN film was grown. The nanorods exhibit hexagonal crosssections with preferential growth along the c axis. A coaxial rod structure with higher In concentration in the core was observed by (scanning) transmission electron microscopy in combination with low-loss electron energy loss spectroscopy and energy dispersive xray spectroscopy. 5 K cathodoluminescence spectroscopy of Al0.86In0.14N nanorods revealed band edge emission at ~5.46 eV, which was accompanied by a strong defectrelated emission at ~ 3.38 eV.

  • 40.
    Hsiao, Ching-Lien
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Palisaitis, Justinas
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Junaid, Muhammad
    Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
    Persson, Per O A
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Jensen, Jens
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Zhao, Qingxiang
    Linköping University, Department of Science and Technology, Physics and Electronics. Linköping University, The Institute of Technology.
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Chen, Li-Chyong
    National Taiwan University, Taiwan .
    Chen, Kuei-Hsien
    National Taiwan University, Taiwan Academic Sinica, Taiwan .
    Birch, Jens
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Room-temperature heteroepitaxy of single-phase Al1-xInxN films with full composition range on isostructural wurtzite templates2012In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 524, p. 113-120Article in journal (Refereed)
    Abstract [en]

    Al1-xInxN heteroepitaxial layers covering the full composition range have been realized by magnetron sputter epitaxy on basal-plane AlN, GaN, and ZnO templates at room temperature (RT). Both Al1-xInxN single layers and multilayers grown on these isostructural templates show single phase, single crystal wurtzite structure. Even at large lattice mismatch between the film and the template, for instance InN/AlN (similar to 13% mismatch), heteroepitaxy is achieved. However, RT-grown Al1-xInxN films directly deposited on non-isostructural c-plane sapphire substrate exhibit a polycrystalline structure for all compositions, suggesting that substrate surface structure is important for guiding the initial nucleation. Degradation of Al1-xInxN structural quality with increasing indium content is attributed to the formation of more point-and structural defects. The defects result in a prominent hydrostatic tensile stress component, in addition to the biaxial stress component introduced by lattice mismatch, in all RT-grown Al1-xInxN films. These effects are reflected in the measured in-plane and out-of-plane strains. The effect of hydrostatic stress is negligible compared to the effects of lattice mismatch in high-temperature grown AlN layers thanks to their low amount of defects. We found that Vegards rule is applicable to determine x in the RT-grown Al1-xInxN epilayers if the lattice constants of RT-sputtered AlN and InN films are used instead of those of the strain-free bulk materials.

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  • 41.
    Hsiao, Ching-Lien
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Palisaitis, Justinas
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Muhammad, Junaid
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Chen, Ruei-San
    Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
    Persson, Per
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Sandström, Per
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Holtz, Per-Olof
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Birch, Jens
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Spontaneous Formation of AlInN Core–Shell Nanorod Arrays by Ultrahigh-Vacuum Magnetron Sputter Epitaxy2011In: Applied Physics Express, ISSN 1882-0786, Vol. 4, no 115002Article in journal (Refereed)
    Abstract [en]

    The spontaneous formation of AlInN core–shell nanorod arrays with variable In concentration has been realized by ultrahigh-vacuum magnetron sputter epitaxy with Ti0.21Zr0.79N or VN seed layer assistance. The nanorods exhibit hexagonal cross sections with preferential growth along the c-axis. A core–shell rod structure with a higher In concentration in the core was observed by (scanning) transmission electron microscopy in combination with low-loss electron energy loss spectroscopy and energy dispersive X-ray spectroscopy. 5 K cathodoluminescence spectroscopy of Al0.86In0.14N nanorods revealed band edge emission at ∼5.46 eV, which was accompanied by a strong defect-related emission at ∼3.38 eV

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  • 42.
    Hsiao, Ching-Lien
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Palisaitis, Justinas
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Persson, Per O A
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Junaid, Muhammad
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Serban, Alexandra
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Sandström, Per
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Birch, Jens
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Nucleation and core-shell formation mechanism of self-induced InxAl1−xN core-shell nanorods grown on sapphire substrates by magnetron sputter epitaxy2016In: Vacuum, ISSN 0042-207X, E-ISSN 1879-2715, Vol. 131, p. 39-43Article in journal (Refereed)
    Abstract [en]

    Nucleation of self-induced nanorod and core-shell structure formation by surface-induced phase separation have been studied at the initial growth stage. The growth of well-separated core shell nanorods is only found in a transition temperature region (600 degrees C amp;lt;= T amp;lt;= 800 degrees C) in contrast to the result of thin film growth outside this region (T amp;lt; 600 degrees C or T amp;gt; 800 degrees C). Formation of multiple compositional domains, due to phase separation, after similar to 20 nm InxAl1-xN epilayer growth from sapphire substrate promotes the core-shell nanorod growth, showing a modified Stranski-Krastanov growth mode. The use of VN seed layer makes the initial growth of the nanorods directly at the substrate interface, revealing a Volmer-Weber growth mode. Different compositional domains are found on VN template surface to support that the phase separation takes place at the initial nucleation process and forms by a self-patterning effect. The nanorods were grown from In-rich domains and initiated the formation of core-shell nanorods due to spinodal decomposition of the InxAl1-xN alloy with a composition in the miscibility gap.

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  • 43.
    Hsu, Chih-Wei
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Lundskog, Anders
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Palisaitis, Justinas
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Persson, Per
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Karlsson, K. Fredrik
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Forsberg, Urban
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Holtz, Per-Olof
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Janzén, Erik
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Controlled Growth of GaN Pyramidal template hosting InGaN Quantum DotsManuscript (preprint) (Other academic)
    Abstract [en]

    The emission properties of InGaN grown on hexagonal GaN pyramids with various pitch distances (PD) are studied. Emissions associated with InGaN quantum wells (QWs) and InGaN quantum dots (QDs) can be identified. The emission energies of InGaN QWs and QDs shift toward opposite directions with increasing PD; red-shift for QWs and blue-shift for QDs. Based on the source supply mechanism in a selective area growth process, the formation of InGaN QDs on GaN pyramids is believed to be a combined effect of Stranski-Krastanow growth mode and spinodal decomposition taking place at the microscopic (0001) surfaces on GaN pyramids.

  • 44.
    Hsu, Chih-Wei
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
    Martinovic, Ivan
    Linköping University, Faculty of Science & Engineering. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    Magnusson, Roger
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Bakhit, Babak
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Palisaitis, Justinas
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Persson, Per O A
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Rouf, Polla
    Linköping University, Department of Physics, Chemistry and Biology, Chemistry. Linköping University, Faculty of Science & Engineering.
    Pedersen, Henrik
    Linköping University, Department of Physics, Chemistry and Biology, Chemistry. Linköping University, Faculty of Science & Engineering.
    Homogeneous high In content InxGa1-x N films by supercycle atomic layer deposition2022In: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, ISSN 0734-2101, E-ISSN 1520-8559, Vol. 40, no 6, article id 060402Article in journal (Other academic)
    Abstract [en]

    InxGa1-x N is a strategically important material for electronic devices given its tunable bandgap, modulated by the In/Ga ratio. However, current applications are hindered by defects caused by strain relaxation and phase separation in the material. Here, we demonstrate growth of homogeneous InxGa1-x N films with 0.3 &lt; x &lt; 0.8 up to similar to 30 nm using atomic layer deposition (ALD) with a supercycle approach, switching between InN and GaN deposition. The composition is uniform along and across the films, without signs of In segregation. The InxGa1-x N films show higher In-content than the value predicted by the supercycle model. A more pronounced reduction of GPC(InN) than GPC(GaN) during the growth processes of InN and GaN bilayers is concluded based on our analysis. The intermixing between InN and GaN bilayers is suggested to explain the enhanced overall In-content. Our results show the advantage of ALD to prepare high-quality InxGa1-x N films, particularly with high In-content, which is difficult to achieve with other growth methods.

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  • 45.
    Israr, Muhammed Qadir
    et al.
    Linköping University, Department of Science and Technology. Linköping University, The Institute of Technology.
    Sadaf, Jamil Rana
    Linköping University, Department of Science and Technology. Linköping University, The Institute of Technology.
    Yang, Li-Li
    Linköping University, Department of Science and Technology. Linköping University, The Institute of Technology.
    Nour, Omer
    Linköping University, Department of Science and Technology. Linköping University, The Institute of Technology.
    Willander, Magnus
    Linköping University, Department of Science and Technology. Linköping University, The Institute of Technology.
    Palisaitis, Justinas
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Persson, Per
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Trimming of aqueous chemically grown ZnO nanorods into ZnO nanotubes and their comparative optical properties2009In: APPLIED PHYSICS LETTERS, ISSN 0003-6951, Vol. 95, no 7, p. 073114-Article in journal (Refereed)
    Abstract [en]

    Highly oriented ZnO nanotubes were fabricated on a silicon substrate by aqueous chemical growth at low temperature (andlt; 100 degrees C) by trimming of ZnO nanorods. The yield of nanotubes in the sample was 100%. Photoluminescence spectroscopy of the nanotubes reveals an enhanced and broadened ultraviolet (UV) emission peak, compared with the initial nanorods. This effect is attributed to whispering gallery mode resonance. In addition, a redshift of the UV emission peak is also observed. Enhancement in the deep defect band emission in the nanotubes compared to nanorods was also manifested as a result of the increased surface area.

  • 46.
    Ivanova, Mariya E.
    et al.
    Forschungszentrum Julich GmbH, Julich, Germany.
    Meulenberg, Wilhelm A.
    Forschungszentrum Julich GmbH, Julich, Germany.
    Palisaitis, Justinas
    Forschungszentrum Julich GmbH, Julich, Germany.
    Sebold, Doris
    Forschungszentrum Julich GmbH, Julich, Germany.
    Solís, Cecilia
    Universidad Politécnica de Valencia-Consejo Superior de Investigaciones Científicas, Valencia.
    Ziegner, Mirko
    Forschungszentrum Julich GmbH, Julich, Germany.
    Serra, Jose M.
    Universidad Politécnica de Valencia-Consejo Superior de Investigaciones Científicas, Valencia.
    Mayer, Joachim
    Forschungszentrum Julich GmbH, Julich, Germany.
    Hänsel, Michael
    Forschungszentrum Julich GmbH, Julich, Germany.
    Guillon, Olivier
    Forschungszentrum Julich GmbH, Julich, Germany.
    Functional properties of La0.99X0.01Nb0.99Al0.01O4−δ and La0.99X0.01Nb0.99Ti0.01O4−δ proton conductors where X is an alkaline earth cation2015In: Journal of the European Ceramic Society, ISSN 0955-2219, E-ISSN 1873-619X, Vol. 35, no 4, p. 1239-1253Article in journal (Refereed)
    Abstract [en]

    Lanthanum niobates with general formulas of La0.99X0.01Nb0.99Al0.01O4−δ and La0.99X0.01Nb0.99Ti0.01O4−δ (X = Mg, Ca, Sr or Ba) were synthesized via the conventional solid state reaction. Specimens with relative density above 96% were produced after sintering. Structural and phase composition studies revealed predominant monoclinic Fergusonite structure for the majority of samples. SEM and TEM studies elucidated the effect of the used dopant combinations on grain growth, micro-crack formation and secondary phase formation. Results from microstructural study were correlated to the grain interior and grain boundary conductivities for selected samples (La0.99Sr0.01Nb0.99Al0.01O4−δ and La0.99Sr0.01Nb0.99Ti0.01O4−δ). The majority of co-doped niobates exhibited appreciable protonic conductivity under humid atmospheres at intermediate temperatures. Sr- or Ca-doped compounds displayed the highest total conductivities with values for LSNA equal to 6 × 10−4 S/cm and 3 × 10−4 S/cm in wet air and in wet 4% H2–Ar (900 °C), respectively. Additionally, thermal expansion was studied to complete functional characterization of co-doped LaNbO4.

  • 47.
    Jokubavicius, Valdas
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Palisaitis, Justinas
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Vasiliauskas, Remigijus
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Yakimova, Rositsa
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Syväjärvi, Mikael
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Macrodefects in cubic silicon carbide crystals2010In: Materials Science Forum, Vols. 645-648, Transtec Publications; 1999 , 2010, Vol. 645-648, p. 375-378Conference paper (Refereed)
    Abstract [en]

    Different sublimation growth conditions of 3C-SiC approaching a bulk process have been investigated with the focus on appearance of macrodefects. The growth rate of 3C-SiC crystals grown on 6H-SiC varied from 380 to 460 mu m/h with the thickness of the crystals from 190 to 230 mu m, respectively. The formation of macrodefects with void character was revealed at the early stage of 3C-SiC crystal growth. The highest concentration of macrodefects appears in the vicinity of the domain in samples grown under high temperature gradient: and fastest temperature ramp up. The formation of macrodefects was related to carbon deficiency which appear due to high Si/C ratio which is used to enable formation of the 3C-SiC polytype.

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  • 48.
    Jouanny, I
    et al.
    University of Calif Los Angeles, CA USA .
    Palisaitis, Justinas
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Ngo, C
    University of Calif Los Angeles, CA USA .
    Mayrhofer, P H.
    Vienna University of Technology, Austria .
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Persson, Per O A .
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Kodambaka, S
    University of Calif Los Angeles, CA USA .
    In situ transmission electron microscopy studies of the kinetics of Pt-Mo alloy diffusion in ZrB2 thin films2013In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 103, no 12Article in journal (Refereed)
    Abstract [en]

    Using in situ high-temperature (1073–1173 K) transmission electron microscopy, we investigated the thermal stability of Pt and Mo in contact with polycrystalline ZrB2 thin films deposited on Al 2O3(0001). During annealing, we observed the diffusion of cubic-structured Pt1− x Mo x (with x = 0.2 ± 0.1) along the length of the ZrB2 layer. From the time-dependent increase in diffusion lengths, we determined that the Pt1− x Mo x does not react with ZrB2, but diffuses along the surface with a constant temperature-dependent velocity. We identify the rate-limiting step controlling the observed phenomenon as the flux of Mo atoms with an associated activation barrier of 3.8 ± 0.5 eV.

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  • 49.
    Junaid, Muhammad
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Hsiao, Ching-Lien
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Chen, Yen-Ting
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Lu, Jun
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Palisaitis, Justinas
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Persson, Per O A
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Birch, Jens
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Effects of N2 Partial Pressure on Growth, Structure, and Optical Properties of GaN Nanorods Deposited by Liquid-Target Reactive Magnetron Sputter Epitaxy2018In: Nanomaterials, E-ISSN 2079-4991, Vol. 8, no 4, article id 223Article in journal (Refereed)
    Abstract [en]

    GaN nanorods, essentially free from crystal defects and exhibiting very sharp band-edge luminescence, have been grown by reactive direct-current magnetron sputter epitaxy onto Si (111) substrates at a low working pressure of 5 mTorr. Upon diluting the reactive N2 working gas with a small amount of Ar (0.5 mTorr), we observed an increase in the nanorod aspect ratio from 8 to ~35, a decrease in the average diameter from 74 to 35 nm, and a two-fold increase in nanorod density. With further dilution (Ar = 2.5 mTorr), the aspect ratio decreased to 14, while the diameter increased to 60 nm and the nanorod density increased to a maximum of 2.4 × 109 cm−2. Yet, lower N2 partial pressures eventually led to the growth of continuous GaN films. The observed morphological dependence on N2 partial pressure is explained by a change from N-rich to Ga-rich growth conditions, combined with reduced GaN-poisoning of the Ga-target as the N2 gas pressure is reduced. Nanorods grown at 2.5 mTorr N2 partial pressure exhibited a high intensity 4 K photoluminescence neutral donor bound exciton transitions (D0XA) peak at ~3.479 eV with a full-width-at-half-maximum of 1.7 meV. High-resolution transmission electron microscopy corroborated the excellent crystalline quality of the nanorods.

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  • 50.
    Junaid, Muhammad
    et al.
    Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
    Hsiao, Ching-Lien
    Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
    Palisaitis, Justinas
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Jensen, Jens
    Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
    Persson, Per
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Birch, Jens
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Electronic-grade GaN(0001)/Al2O3(0001) grown by reactive DC-magnetron sputter epitaxy using a liquid Ga target2011In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 98, no 14, p. 141915-Article in journal (Refereed)
    Abstract [en]

    Electronic-grade GaN (0001) epilayers have been grown directly on Al2O3 (0001) substrates by reactive DC-magnetron sputter epitaxy (MSE) from a liquid Ga sputtering target in an Ar/N2 atmosphere. The as-grown GaN epitaxial film exhibit low threading dislocation density on the order of ≤ 1010 cm-2 obtained by transmission electron microscopy and modified Williamson-Hall plot. X-ray rocking curve shows narrow fullwidth at half maximum (FWHM) of 1054 arcsec of the 0002 reflection. A sharp 4 K photoluminescence peak at 3.474 eV with a FWHM of 6.3 meV is attributed to intrinsic GaN band edge emission. The high structural and optical qualities indicate that MSEgrown GaN epilayers can be used for fabricating high-performance devices without the need of any buffer layer.

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