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  • 1.
    Choubina, Tatiana
    et al.
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
    Glasov, M.M.
    Toropov, A.A.
    Ivchenko, E.L.
    Usui, A.
    Bergman, Peder
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Monemar, Bo
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Light diffusion in GaN epilayers2007In: 3rd International Conference on Spontaneous Coherence in Excitonic System,2007, 2007Conference paper (Other academic)
  • 2.
    Choubina, Tatiana
    et al.
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
    Glazov, M.M.
    Toropov, A.A.
    Gippius, N.A.
    Bergman, Peder
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Monemar, Bo
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Usui, A.
    Vasson, A.
    Leymarie, J.
    Ivanov, Ivan Gueorguiev
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Kopev, P.S.
    Slow light in GaN2008In: 16th Int. Symp. ¿Nanostructures: Physics and Technology,2008, 2008, p. 257-Conference paper (Refereed)
  • 3.
    Choubina, Tatiana
    et al.
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
    Glazov, M.M.
    Toropov, A.A.
    Gippius, N.A.
    Vasson, A.
    Leymarie, J.
    Kavokin, A.
    Usui, A.
    Bergman, Peder
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Pozina, Galia
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Monemar, Bo
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    The slow light in GaN2008In: ICPS2008,2008, 2008, p. 647-Conference paper (Refereed)
  • 4.
    Choubina, Tatiana
    et al.
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
    Glazov, M.M.
    Toropov, A.A.
    Ivanov, Ivan Gueorguiev
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Gippius, N.A.
    Vasson, A.
    Leymaire, J.
    Kavokin, A.
    Usui, A.
    Bergman, Peder
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Pozina, Galia
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Monemar, Bo
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Realization of slow light in GaN crystals2008In: IWN 2008,2008, 2008Conference paper (Refereed)
  • 5. Ivanov, SV
    et al.
    Shubina, Tatiana
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
    Jmerik, VN
    Vekshin, VA
    Kop'ev, PS
    Monemar, Bo
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Plasma-assisted MBE growth and characterization of InN on sapphire2004In: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 269, no 1Article in journal (Refereed)
    Abstract [en]

    We report on a close correlation between the growth conditions of InN/Al2O3 (0 0 0 1) epilayers grown by plasma-assisted molecular beam epitaxy (MBE), their optical properties in the IR range, and the In clustering in the layers. High-spatial resolution techniques, namely micro-cathodoluminesesence, back-scattered electron imaging and energy dispersive X-ray analysis, were used to establish this correlation. The In-rich growth conditions, achieved by increasing either the growth temperature or the effective In/N flux ratio, causes the In clustering in InN, responsible in our samples for the 0.7-0.8 eV luminescence and IR optical absorption. Growth under In/N = 1: 1 conditions slightly shifted to the N-rich side generally produces InN layers without visible In clusters, having an optical absorption edge around 1.4 eV. A possible mechanism of In cluster formation is suggested on the basis of thermodynamic considerations for InN MBE growth. (C) 2004 Elsevier B.V. All rights reserved.

  • 6.
    Monemar, Bo
    et al.
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Paskov, Plamen
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Pozina, Galia
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Bergman, Peder
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Hemmingsson, Carl
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Toropov, A.A.
    Choubina, Tatiana
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
    Kawashima, T.
    Amano, H.
    Akasaki, I.
    Usui, A.
    Paskova, Tanja
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
    Properties of dopants and defects in GaN from bound exciton spectra2008In: Meijo International Symposium on Nitride Semiconductors 2008,2008, 2008Conference paper (Other academic)
  • 7.
    Ratnikov, V
    et al.
    Linkoping Univ, S-58183 Linkoping, Sweden Russian Acad Sci, Ioffe Inst, St Petersburg 194021, Russia Univ Sofia, Fac Phys, BU-1164 Sofia, Bulgaria.
    Kyutt, R
    Linkoping Univ, S-58183 Linkoping, Sweden Russian Acad Sci, Ioffe Inst, St Petersburg 194021, Russia Univ Sofia, Fac Phys, BU-1164 Sofia, Bulgaria.
    Shubina, Tatiana
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
    Paskova, Tanja
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
    Valcheva, E
    Linkoping Univ, S-58183 Linkoping, Sweden Russian Acad Sci, Ioffe Inst, St Petersburg 194021, Russia Univ Sofia, Fac Phys, BU-1164 Sofia, Bulgaria.
    Monemar, Bo
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Bragg and Laue x-ray diffraction study of dislocations in thick hydride vapor phase epitaxy GaN films2000In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 88, no 11, p. 6252-6259Article in journal (Refereed)
    Abstract [en]

    The dislocation structure of hydride vapor phase epitaxial thick GaN layers grown on sapphire is studied by analysis of the microdistortion tensor components. Symmetrical reflections (including reflections from planes forming a large angle with the basal plane) with two modes of scanning (theta and theta -2 theta) in two geometries (Bragg and Laue) are used to obtain the tensor components. The instant connections between the tensor components and major dislocation types are specified. Different types of dislocation distributions have been identified in the thick GaN films grown on sapphire with and without undoped and Si-doped metalorganic chemical vapor deposited templates. Transmission electron microscopy was used to confirm the x-ray results by direct visualization of defect rearrangements. (C) 2000 American Institute of Physics. [S0021-8979(00)06023-0].

  • 8.
    Ratnikov, VV
    et al.
    RAS, Ioffe Inst, St Petersburg 194021, Russia Linkoping Univ, S-58183 Linkoping, Sweden.
    Kyutt, RN
    RAS, Ioffe Inst, St Petersburg 194021, Russia Linkoping Univ, S-58183 Linkoping, Sweden.
    Shubina, Tatiana
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
    Paskova, Tanja
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
    Monemar, Bo
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Determination of microdistortion components and their application to structural characterization of HVBE GaN epitaxial layers2001In: Journal of Physics D: Applied Physics, ISSN 0022-3727, E-ISSN 1361-6463, Vol. 34, no 10A, p. A30-A34Article in journal (Refereed)
    Abstract [en]

    The dislocation structure of hydride vapour phase epitaxial thick GaN layers grown on sapphire is studied by analysis of the microdistortion tenser components. Symmetrical reflections (including reflections from planes forming large angles with the basal plane) with two modes of scanning (theta and theta -2 theta) in two geometries (Bragg and Lane) are used to obtain the tenser components. The instant connections between the tenser components and major dislocation types are specified. Different types of dislocation distributions have been identified in the thick GaN films grown on sapphire without and with undoped and Si-doped metal-organic chemical vapour deposited templates.

  • 9. Scott, K.
    et al.
    Butcher, A.
    Wintrebert-Fouquet, M.
    Chen, P.P.-T.
    Prince, K.E.
    Timmers, H.
    Shrestha, S.K.
    Shubina, Tatiana
    Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
    Ivanov, S.V.
    Wuhrer, R.
    Philips, M.R.
    Monemar, Bo
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    Non-stoichiometry and non-homogeneity in InN2005In: Physica Status Solidi. C, Current topics in solid state physics, ISSN 1610-1634, E-ISSN 1610-1642, Vol. 2, p. 2263-2266Article in journal (Refereed)
  • 10.
    Shubina, Tatiana
    et al.
    Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia.
    Glazov, M. M.
    Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia.
    Toropov, A. A.
    Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia.
    Gippius, N. A.
    UBP, CNRS, UMR 6602, LASMEA, F-63177 Clermont Ferrand, France.
    Vasson, A.
    UBP, CNRS, UMR 6602, LASMEA, F-63177 Clermont Ferrand, France.
    Leymarie, J.
    UBP, CNRS, UMR 6602, LASMEA, F-63177 Clermont Ferrand, France.
    Kavokin, A.
    Univ Southampton, Southampton SO17 1BJ, Hants, England.
    Usui, A.
    Furukawa Co Ltd, R&D Div, Tsukuba, Ibaraki 3050856, Japan.
    Bergman, Peder
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Pozina, Galia
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Monemar, Bo
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Resonant light delay in GaN with ballistic and diffusive propagation2008In: Physical Review Letters, ISSN 0031-9007, E-ISSN 1079-7114, Vol. 100, no 8Article in journal (Refereed)
    Abstract [en]

    We report on a strong delay in light propagation through bulk GaN, detected by time-of-flight spectroscopy. The delay increases resonantly as the photon energy approaches the energy of a neutral-donor bound exciton (BX), resulting in a velocity of light as low as 2100 km/s. In the close vicinity of the BX resonance, the transmitted light contains both ballistic and diffusive components. This phenomenon is quantitatively explained in terms of optical dispersion in a medium where resonant light scattering by the BX resonance takes place in addition to the polariton propagation.

  • 11.
    Shubina, Tatiana
    et al.
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
    Glazov, M.M.
    Ivanov, S.V.
    Vasson, A.
    Leymarie, J.
    Monemar, Bo
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Araki, T.
    Naoi, H.
    Nanishi, Y.
    Effects of non-stoichiometry and compensation on fundamental parameters of heavily-doped InN2007In: Physica Status Solidi. C, Current topics in solid state physics, ISSN 1610-1634, E-ISSN 1610-1642, Vol. 4, no 7, p. 2474-2477Article in journal (Refereed)
  • 12.
    Shubina, Tatiana
    et al.
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
    Ivanov, SV
    Jmerik, VN
    Glazov, MM
    Kalvarskii, AP
    Tkachman, MG
    Vasson, A
    Leymarie, J
    Kavokin, A
    Amano, H
    Akasaki, I
    Butcher, KSA
    Guo, Q
    Monemar, Bo
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    Kop'ev, PS
    Optical properties of InN with stoichoimetry violation and indium clustering2005In: Physica Status Solidi (a) applications and materials science, ISSN 1862-6300, E-ISSN 1862-6319, Vol. 202, no 3, p. 377-382Article in journal (Refereed)
    Abstract [en]

    We demonstrate that nonstoichiometry is one of the main reason of strong deviation of the InN optical gap in the 0.7-2 eV range, with N/In < 1 and N/In > 1 corresponding to the lower and higher energies, respectively. The phenomenon is discussed in terms of atomic orbital energies, which are strongly different for indium and nitrogen, therefore both excess atom incorporation and elimination could change the optical gap. We estimate such trends using the approximation of the empirical nearest-neighbor tight binding theory. It is also demonstrated that resonant absorption in In-enriched regions is an additional factor lowering an effective absorption edge.

  • 13.
    Shubina, Tatiana
    et al.
    Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
    Ivanov, SV
    Ioffe Physico-Technical Institute Polytekhnicheskaya 26 St. Petersburg 194021, Russia.
    Jmerik, VN
    Ioffe Physico-Technical Institute Polytekhnicheskaya 26 St. Petersburg 194021, Russia.
    Kop'ev, PS
    Ioffe Physico-Technical Institute Polytekhnicheskaya 26 St. Petersburg 194021, Russia.
    Vasson, A
    LASMEA-UMR 6602 CNRS-UBP 63177 AUBIERE CEDEX, France.
    Leymarie, J
    LASMEA-UMR 6602 CNRS-UBP 63177 AUBIERE CEDEX, France.
    Kavokin, A
    LASMEA-UMR 6602 CNRS-UBP 63177 AUBIERE CEDEX, France.
    Amano, H
    Meijo University, 1-501 Shiogamaguchi Tempaku-ku Nagoya 468-8502, Japan.
    Gil, B
    Université Montpellier II, 34095 Montpellier, France.
    Briot, O
    Université Montpellier II, 34095 Montpellier, France.
    Monemar, Bo
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Comment on "Mie resonances, infrared emission, and the band gap of InN" - Reply2004In: Physical Review Letters, ISSN 0031-9007, E-ISSN 1079-7114, Vol. 93, no 26, p. 269702-Article in journal (Other academic)
    Abstract [en]

    Abstract Not Available

  • 14.
    Shubina, Tatiana
    et al.
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
    Ivanov, S.V.
    Jmerik, V.N.
    Mizerov, A.M.
    Leymarie, J.
    Vasson, A.
    Monemar, Bo
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Kopev, P.S.
    Inhomogeneous InGaN and InN with In-enriched Nanostructures2007In: -,2007, 2007, p. 269-Conference paper (Refereed)
    Abstract [en]

      

  • 15.
    Shubina, Tatiana
    et al.
    Linköping University, Department of Physics, Chemistry and Biology.
    Ivanov, S.V.
    Jmerik, V.N.
    Solnyshkov, D.D.
    Vekshin, V.A.
    Kopev, P.S.
    Vasson, A
    Leymarie, J
    Kavokin, A
    Amano, H
    Shimono, K
    Monemar, Bo
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Mie Resonances, Infrared Emission, and the Band Gap of InN2004Article in journal (Refereed)
    Abstract [en]

    The deviations on the band-gap of InN which were linked to the precipitation of indium in the metallic phase that leads to additional optical losses associated with Mie resonances were discussed. The two sets of InP epilayers were examined by both plasma-assisted molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD) on sapphire. The Mie resonance for InN layers were important because of the activation in the In aggregation phenomena in the alloys. The results show that bright infrared emission arises in a close vicinity of In inclusions and was likely associated with surface states at the metal/InN interfaces.

  • 16.
    Shubina, Tatiana
    et al.
    Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
    Ivanov, S.V.
    Mjerik, V.N.
    Solnyshkov, D.D.
    Kopev, P.D.
    Vasson, A.
    Leymaire, J.
    Kavokin, A.
    Amano, H.
    Kamiyama, S.
    Iwaya, M.
    Akasaki, I.
    Lu, H.
    Schaff, W.J.
    Kasic, A.
    Monemar, Bo
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    Mie resonant Absorption and Infrared Emission in InN Related to Metallic In Clusters2005In: AIP Conference Proceedings, ISSN 0094-243X, E-ISSN 1551-7616, Vol. 772, p. 263-264Article in journal (Refereed)
  • 17.
    Shubina, Tatiana
    et al.
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
    Ivanov, SV
    AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden Chalmers, S-41296 Gothenburg, Sweden Gothenburg Univ, S-41296 Gothenburg, Sweden Univ Ulm, Abt Halbleiterphys, D-89081 Ulm, Germany Univ Wurzburg, Inst Phys, D-97074 Wurzburg, Germany.
    Toropov, AA
    AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden Chalmers, S-41296 Gothenburg, Sweden Gothenburg Univ, S-41296 Gothenburg, Sweden Univ Ulm, Abt Halbleiterphys, D-89081 Ulm, Germany Univ Wurzburg, Inst Phys, D-97074 Wurzburg, Germany.
    Sorokin, SV
    AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden Chalmers, S-41296 Gothenburg, Sweden Gothenburg Univ, S-41296 Gothenburg, Sweden Univ Ulm, Abt Halbleiterphys, D-89081 Ulm, Germany Univ Wurzburg, Inst Phys, D-97074 Wurzburg, Germany.
    Lebedev, Alexander
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
    Kyutt, RN
    AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden Chalmers, S-41296 Gothenburg, Sweden Gothenburg Univ, S-41296 Gothenburg, Sweden Univ Ulm, Abt Halbleiterphys, D-89081 Ulm, Germany Univ Wurzburg, Inst Phys, D-97074 Wurzburg, Germany.
    Solnyshkov, DD
    AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden Chalmers, S-41296 Gothenburg, Sweden Gothenburg Univ, S-41296 Gothenburg, Sweden Univ Ulm, Abt Halbleiterphys, D-89081 Ulm, Germany Univ Wurzburg, Inst Phys, D-97074 Wurzburg, Germany.
    Pozina, Galia
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Bergman, JP
    AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden Chalmers, S-41296 Gothenburg, Sweden Gothenburg Univ, S-41296 Gothenburg, Sweden Univ Ulm, Abt Halbleiterphys, D-89081 Ulm, Germany Univ Wurzburg, Inst Phys, D-97074 Wurzburg, Germany.
    Monemar, Bo
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Willander, Magnus
    Linköping University, The Institute of Technology. Linköping University, Department of Science and Technology.
    Waag, A
    AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden Chalmers, S-41296 Gothenburg, Sweden Gothenburg Univ, S-41296 Gothenburg, Sweden Univ Ulm, Abt Halbleiterphys, D-89081 Ulm, Germany Univ Wurzburg, Inst Phys, D-97074 Wurzburg, Germany.
    Landwehr, G
    AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden Chalmers, S-41296 Gothenburg, Sweden Gothenburg Univ, S-41296 Gothenburg, Sweden Univ Ulm, Abt Halbleiterphys, D-89081 Ulm, Germany Univ Wurzburg, Inst Phys, D-97074 Wurzburg, Germany.
    Interface effects in type-II CdSe/BeTe quantum dots2002In: Physica status solidi. B, Basic research, ISSN 0370-1972, E-ISSN 1521-3951, Vol. 229, no 1, p. 489-492Article in journal (Refereed)
    Abstract [en]

    We report on optical and structural studies of the interface symmetry in CdSe/BeTe multiple-layer structures containing self-assembled quantum dots. Temperature and decay behavior of the broad photoluminescence (PL) band is consistent with the type-II transitions involving deeply localized electron states. Large linear in-plane polarization of the PL (up to 80%) is observed, implying the C-2v (or lower) symmetry of the individual places of the electron localization.

  • 18.
    Shubina, Tatiana
    et al.
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
    Jmerik, VN
    Ivanov, SV
    Kop'ev, PS
    Kavokin, A
    Karlsson, K Fredrik
    Linköping University, Department of Physics, Chemistry and Biology, Materials Science . Linköping University, The Institute of Technology.
    Holtz, Per-Olof
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Monemar, Bo
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Narrow-line excitonic photoluminescence in GaN/AlxGa1-xN quantum well structures with inversion domains2003In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 67, no 24, p. 241306-Article in journal (Refereed)
    Abstract [en]

    Microphotoluminescence studies reveal strong and narrow lines of similar to1-meV minimal width in GaN/AlxGa1-xN quantum well (QW) structures having inversion domains (IDs). These narrow lines coexist in the spectra with broad (10-15 meV) peaks. The features of both kinds are characteristic for intersections of the IDs with QWs, which provide either three- or one-dimensional carrier confinement, depending on both the ID diameter and well width.

  • 19.
    Shubina, Tatiana
    et al.
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
    Jmerik, VN
    Tkachman, MG
    Vekshin, VA
    Ratnikov, VV
    Toropov, AA
    Sitnikova, AA
    Ivanov, SV
    Bergman, Peder
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Karlsson, Fredrik
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Holtz, Per-Olof
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Monemar, Bo
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Nanometric-scale fluctuations of intrinsic electric fields in GaN/AlGaN quantum wells with inversion domains2002In: Physica status solidi. B, Basic research, ISSN 0370-1972, E-ISSN 1521-3951, Vol. 234, no 3, p. 919-923Article in journal (Refereed)
    Abstract [en]

    Strain and electric field fluctuations in regions of different polarities in GaN/AlGaN quantum well (QW) structures of dominant N-polarity with inversion domains (IDs) split the photoluminescence (PL) emission into two bands. Micro-PL and time-resolved PL studies reveal strong inhomogeneity of the array of the IDs, where essential parameters, such as strain, electric fields, and sizes are fluctuating quantities. We demonstrate also that the ID formation decreases the intrinsic electric field magnitudes.

  • 20.
    Shubina, Tatiana
    et al.
    Ioffe Physico-Technical Institute, Polytekhnicheskaya 26, St. Petersburg 194021, Russian Federation.
    Jmerik, V.N.
    Ioffe Physico-Technical Institute, Polytekhnicheskaya 26, St. Petersburg 194021, Russian Federation.
    Tkachman, M.G.
    Ioffe Physico-Technical Institute, Polytekhnicheskaya 26, St. Petersburg 194021, Russian Federation.
    Vekshin, V.A.
    Ioffe Physico-Technical Institute, Polytekhnicheskaya 26, St. Petersburg 194021, Russian Federation.
    Toropov, A.A.
    Ioffe Physico-Technical Institute, Polytekhnicheskaya 26, St. Petersburg 194021, Russian Federation.
    Ivanov, S.V.
    Ioffe Physico-Technical Institute, Polytekhnicheskaya 26, St. Petersburg 194021, Russian Federation.
    Kop'ev, P.S.
    Ioffe Physico-Technical Institute, Polytekhnicheskaya 26, St. Petersburg 194021, Russian Federation.
    Bergman, Peder
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Karlsson, Fredrik
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Holtz, Per-Olof
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Monemar, Bo
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    Optical properties of GaN/AlGaN quantum wells with inversion domains2003In: Physica status solidi. A, Applied research, ISSN 0031-8965, E-ISSN 1521-396X, Vol. 195, no 3, p. 537-542Article in journal (Refereed)
    Abstract [en]

    Two-band photoluminescence (PL) and respective absorption and reflection features are observed in GaN/AlGaN MBE-grown quantum well (QW) structures of dominant N polarity with inversion domains (IDs). The PL bands are related to transitions in the regions of different polarity, characterized by different strain and electric fields. A micro-PL study reveals sharp and narrow (1.5-2.5 meV) PL lines placed between the bands, which are tentatively attributed to recombination at localization sites associated with intersections of the QWs with the domains. Additionally, we demonstrate that the ID formation decreases the overall strength of the intrinsic electric fields in the QW structures.

  • 21. Shubina, Tatiana
    et al.
    Karlsson, Fredrik
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Jmerik, V.N.
    Ivanov, S.V.
    Kavokin, P.S.
    Holtz, Per-Olof
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Kopev, P.S.
    Monemar, Bo
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Narrow-line excitonic luminescence in GaN/AlGaN nanostructures based on inversion domains2003In: Physica Status Solidi. C, Current topics in solid state physics, ISSN 1610-1634, E-ISSN 1610-1642, Vol. 0, no 7, p. 2716-2720Article in journal (Refereed)
    Abstract [en]

    Presented at: 5th International Conference on Nitride Semiconductors (ICNS-5), Nara, Japan, 25-30 May, 2003 

  • 22.
    Shubina, Tatiana
    et al.
    Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
    Leymarie, J.
    Jmerik, V.N.
    Amano, H.
    Schaff, W.J.
    Monemar, Bo
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    Ivanov, S.V.
    Optical properties of InN related to surface plasmons2005In: Physica Status Solidi (a) applications and materials science, ISSN 1862-6300, E-ISSN 1862-6319, Vol. 202, no 14, p. 2633-2641Article in journal (Refereed)
    Abstract [en]

    We report on the complex nature of infrared luminescence and absorption in InN films, which cannot be entirely explained by the concept of a conventional narrow-gap semiconductor. In particular, it concerns the detection of peaks near absorption edges by both thermally detected optical absorption and photoluminescence excitation spectroscopy and the observation of extraordinarily strong resonant enhancement of emission. To describe the experimental data a model is proposed, which takes into account surface plasmons in metal-like inclusions, modifying the optical properties of InN. © 2005 WILEY-VCH Verlag GmbH & Co. KGaA,.

  • 23.
    Shubina, Tatiana
    et al.
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
    Paskova, Tanja
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
    Toropov, AA
    Russian Acad Sci, AF Ioffe Phys Tech Inst, Ctr Nanoheterostruct Phys, St Petersburg 194021, Russia Linkoping Univ, Dept Phys & Measurement Technol, S-581833 Linkoping, Sweden.
    Lebedev, Alexander
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
    Ivanov, SV
    Russian Acad Sci, AF Ioffe Phys Tech Inst, Ctr Nanoheterostruct Phys, St Petersburg 194021, Russia Linkoping Univ, Dept Phys & Measurement Technol, S-581833 Linkoping, Sweden.
    Monemar, Bo
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Micro-photoluminescence spectroscopy of exciton-polaritons in GaN with the wave vector k normal to the c-axis2001In: Physica status solidi. B, Basic research, ISSN 0370-1972, E-ISSN 1521-3951, Vol. 228, no 2, p. 481-484Article in journal (Refereed)
    Abstract [en]

    We report on polarized micro-photoluminescence (mu -PL) and micro-reflectance (mu -R) studies of GaN layers grown by HVPE. A strong pi -polarized component in the vicinity of A exciton is observed in the mu -PL and attributed as a mixture of a bound B exciton, dominating at low temperature, and scattered A exciton-polariton states prevailing at higher temperatures. Temperature variation of exciton energies in the mu -R spectra reveals strain-induced difference between the top surface and the cleaved edges.

  • 24.
    Shubina, Tatiana
    et al.
    Linköping University, Department of Physics, Chemistry and Biology.
    Plotnikov, D.S.
    Terentev, Ya.V.
    Vinokurov, D.A.
    Pihtin, N.A.
    Tarasov, I.S.
    Ivanov, S.V.
    Leymarie, J.
    Kavokin, A.
    Vasson, A.
    Monemar, Bo
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Lu, H.
    Schaff, W.J
    Kopev, P.S.
    Surface-plasmon-related enhancement of luminescence in InN2005In: 13 Int. Symposium Nanostructures: Physics and Technology,2005, 2005, p. 268-269Conference paper (Refereed)
  • 25. Shubina, Tatiana
    et al.
    Plotnikov, D.S.
    Vasson, A.
    Leymarie, J.
    Larsson, Mats
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Holtz, Per-Olof
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Monemar, Bo
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Lu, H.
    Schaff, W.J.
    Kop¿ev, P.S.
    Surface-plasmon resonances in indium nitride with metal-enriched nano-particles2006In: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 288, no 2, p. 230-235Article in journal (Refereed)
    Abstract [en]

    Plasmonic resonances in In-enriched nano-particles, spontaneously formed during growth, can dramatically modify optical properties of InN. Experimental support for this is provided from detailed studies of absorption and infrared emission in InN. In particular, thermally detected optical absorption and photoluminescence excitation spectroscopy reveal a peak below the region of strong absorption in InN. A higher-energy part of the infrared emission having a noticeable p-polarization is markedly enhanced with excitation along the surface. These peculiarities are discussed in terms of the Mie resonances, arising in metallic spheroids with different aspect ratio, and their coupling with recombining states, whose strength depends on energy separation between the states and the resonances. © 2005 Elsevier B.V. All rights reserved.

  • 26.
    Shubina, Tatiana
    et al.
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
    Toropov, AA
    AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden.
    Ivanov, SV
    AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden.
    Bergman, JP
    AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden.
    Paskova, Tanja
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
    Holtz, Per-Olof
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Monemar, Bo
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Peculiarities of exciton-polaritons in GaN at different polarizations studied by mu-photoluminescence spectroscopy2002In: Physica status solidi. A, Applied research, ISSN 0031-8965, E-ISSN 1521-396X, Vol. 190, no 1, p. 205-211Article in journal (Refereed)
    Abstract [en]

    We report on polariton properties in high quality thick GaN grown by hydride vapor phase epitaxy on c-sapphire. A strong fine is observed in the vicinity of the A exciton in T-polarization (k perpendicular to c, E parallel to the c-axis) by micro-photoluminescence (mu-PL). Comparison of the mu-PL and mu-reflectance spectra confirms the internal origin of the polariton emission. In the samples with low density of residual donors the enhancement of the a-polarized component is induced mostly by interbranch scattering which occurs, possibly., due to the complex structure of the exciton-polariton branches at k perpendicular to c. The Gamma(1)-Gamma(5) exciton splitting in the C band is determined by the mu-reflectance as similar to1 meV.

  • 27.
    Shubina, Tatiana
    et al.
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
    Toropov, AA
    Jmerik, VN
    Tkachman, MG
    Lebedev, Alexander
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
    Ratnikov, VV
    Sitnikova, AA
    Vekshin, VA
    Ivanov, SV
    Kop'ev, PS
    Bigenwald, P
    Bergman, Peder
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Holtz, Per-Olof
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Monemar, Bo
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Intrinsic electric fields in N-polarity GaN/AlxGa1-xN quantum wells with inversion domains2003In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 67, no 19Article in journal (Refereed)
    Abstract [en]

    GaN/AlGaN quantum wells (QWs) of dominant N polarity with inversion domains (IDs), grown by molecular-beam epitaxy, have been studied. Two-band photoluminescence (PL), with the lower-energy band and an additional absorption edge related to the IDs, is observed in these QWs due to a difference in strain, electric field, and well width in the regions of different polarities. A time-resolved PL study reveals additionally strong inhomogeneity of the electric fields among the IDs. The intrinsic electric fields in the structures are relatively small-their maximal estimated value of 180 kV/cm is among the lowest ever reported. The low-scale electric fields indicate likely polarization deterioration in the N-polarity structures. These conditions are favorable for bright PL up to room temperature in 8-9-nm-wide wells.

  • 28. Shubina, Tatiana
    et al.
    Toropov, A.A.
    Lublinskaya, O.G.
    Kopev, P.S.
    Ivanov, S.V.
    El-Shaer, A.
    Al-Suleiman, M.
    Bakin, A.
    Waag, A.
    Voinilovich, A.
    Lutsenko, E.V.
    Yablonskii, G.P.
    Bergman, Peder
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Pozina, Galia
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Monemar, Bo
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Recombination dynamics and lasing in ZnO/ZnMgO single quantum well structures2007In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 91, no 20Article in journal (Refereed)
    Abstract [en]

    We report a time-resolved study of the recombination dynamics in molecular beam epitaxy grown ZnOZnMgO single quantum wells (SQWs) of 1.0-4.5 nm width. The SQWs exhibit different emission properties, depending on both the well width and defect density. Stimulated emission has been achieved at room temperature in a separate confinement double heterostructure having a 3 nm wide SQW as an active region. It has been found that a critical parameter for the lasing is the inhomogeneous broadening of both QW and barrier emission bands. © 2007 American Institute of Physics.

  • 29.
    Shubina, Tatiana
    et al.
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
    Vasson, A.
    Leymarie, J.
    Gippius, N.A.
    Jmerik, V.N.
    Monemar, Bo
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Ivanov, S.V.
    Localized plasmons at pores and clusters within inhomogeneous indium nitride films2007In: Physica Status Solidi. C, Current topics in solid state physics, ISSN 1610-1634, E-ISSN 1610-1642, Vol. 4, no 7, p. 2445-2448Article in journal (Refereed)
  • 30. Toropov, A.A.
    et al.
    Kitaev, Yu. E.
    Shubina, Tatiana
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
    Paskov, Plamen
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    Bergman, Peder
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    Monemar, Bo
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    Polarization-resolved phonon-assisted optical transitions of bound excitons in wurtzite GaN2008In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 77, no 19Article in journal (Refereed)
    Abstract [en]

    The selection rules of phonon-assisted optical transitions of bound excitons in bulk wurtzite GaN are studied both experimentally and theoretically. The linearly polarized photoluminescence is detected within the phonon replicas of the lines of impurity bound excitons in the geometry, when the light wave vector is normal to the hexagonal axis, and the electric field vector is either perpendicular or parallel to it. The degree and even sign of the linear polarization is found to depend on the symmetry of the involved optical phonon. To explain these data, a group-theory approach is applied to derive the selection rules for zero-phonon and phonon-assisted transitions involving excitons bound to either substitutional (C3v symmetry) or interstitial (C3v, Cs, or C1 symmetries) impurities. The obtained theoretical selection rules are in an agreement with the experimental results, provided the exciton is bound to the impurities with the C3v symmetry. © 2008 The American Physical Society.

  • 31. Toropov, A.A.
    et al.
    Nekrutina, O.V.
    Shubina, Tatiana
    Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
    Ivanov, S.V.
    Gruber, Th.
    Kling, R.
    Reuss, F.
    Kirchner, C.
    Waag, A.
    Karlsson, Fredrik
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    Bergman, Peder
    Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
    Monemar, Bo
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    Excitonic Properties of ZnO Films and Nanorods2005In: AIP Conference Proceedings, ISSN 0094-243X, E-ISSN 1551-7616, Vol. 772, p. 991-992Article in journal (Refereed)
  • 32. Toropov, A.A.
    et al.
    Nekrutkina, O.V.
    Choubina, Tatiana
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
    Gruber, Th.
    Kirchner, C.
    Waag, A.
    Karlsson, Fredrik
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    Holtz, Per-Olof
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    Monemar, Bo
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    Temperature-dependent exciton polariton photoluminescence in ZnO films2004In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 69, no 16, p. 165205-Article in journal (Refereed)
    Abstract [en]

    The polarized photoluminescence (PL) in a (0001) oriented ZnO epitaxial film is studied in the temperature range 4.5-250 K. We report the evidence of exciton polariton emission between 50 and 130 K. In this range the PL of mixed polariton modes is detected in the geometry of an extraordinary beam, realized by the use of a large-aperture microobjective collecting light from the cleaved sample edge at different angles with respect to the. c axis. The elevated temperatures facilitate the polariton emission due to the thermal population of both A and B exciton branches and the enhanced polariton scattering into the photonlike mixed modes.

  • 33. Toropov, AA
    et al.
    Nekrutkina, OV
    Shubina, Tatiana
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
    Gruber, T
    Kirchner, C
    Waag, A
    Karlsson, K.Fredrik
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Monemar, Bo
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    Temperature-dependent polarized luminescence of exciton polaritons in a ZnO film2005In: Physica Status Solidi (a) applications and materials science, ISSN 1862-6300, E-ISSN 1862-6319, Vol. 202, no 3, p. 392-395Article in journal (Refereed)
    Abstract [en]

    We report on the studies of linearly polarized photoluminescence (PL) in a (0001) oriented ZnO epitaxial film, grown by metal organic chemical vapor deposition on a GaN template. The emission of mixed longitudinal-transverse exciton polariton modes was observed up to 130 K that evidences polaritonic nature of the excitonic spectrum up to this elevated temperature.

1 - 33 of 33
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