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  • 1.
    Bergman, JP
    et al.
    Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden ABB Corp, SE-72178 Vasteras, Sweden Okmet AB, SE-58183 Linkoping, Sweden.
    Jakobsson, H
    Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden ABB Corp, SE-72178 Vasteras, Sweden Okmet AB, SE-58183 Linkoping, Sweden.
    Storasta, Liutauras
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    Carlsson, Fredrik
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
    Magnusson, Björn
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    Sridhara, S
    Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden ABB Corp, SE-72178 Vasteras, Sweden Okmet AB, SE-58183 Linkoping, Sweden.
    Pozina, Galia
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    Lendenmann, H
    Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden ABB Corp, SE-72178 Vasteras, Sweden Okmet AB, SE-58183 Linkoping, Sweden.
    Janzén, Erik
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    Characterisation and defects in silicon carbide2002In: Materials Science Forum, Vols. 389-393, 2002, Vol. 389-3Conference paper (Refereed)
    Abstract [en]

    In this work we present experimental results of several defects in 4H Sic that are of interest both from a fundamental and physical point of view. And also of great importance for device applications utilizing the Sic material. These defects include the temperature stable so called D1 defect, which is created after irradiation. This optical emission has been identified as an isoelectronic defect bound at a hole attractive pseudodonor, and we have been able to correlate this to the electrically observed hole trap HS1 seen in minority carrier transient spectroscopy (MCTS). It also includes the UD1 defect observed using absorption and FTIR and which is believed to be responsible for the semi-insulating behavior of material grown by the High temperature, HTCVD technique. Finally, we have described the formation and proper-ties of critical, generated defect in high power Sic bipolar devices. This is identified as a stacking fault in the Sic basal plane, using mainly white beam synchrotron Xray topography. The stacking fault is both optically and electrically active, by forming extended local potential reduction of the conduction band.

  • 2.
    Bergman, Peder
    et al.
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    Storasta, Liutauras
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    Carlsson, Fredrik
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
    Sridhara, S.
    Magnusson, Björn
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    Janzén, Erik
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Defects in 4H silicon carbide2001In: Physica B, Vols. 308-310, 2001, Vol. 308-310, p. 675-679Conference paper (Refereed)
    Abstract [en]

    We present experimental results related to several different intrinsic defects that in different ways influence the material properties and are therefore technologically important defects. This includes the so-called D1 defect which is created after irradiation and which is temperature stable. From the optical measurements we were able to identify the D1 bound exciton as an isoelectronic defect bound at a hole attractive pseudo-donor, and we have been able to correlate this to the electrically observed hole trap HS1 seen in minority carrier transient spectroscopy (MCTS). Finally, we describe the formation and properties of a critical, generated defect in high power SiC bipolar devices. It is identified as a stacking fault in the SiC basal plane. It can be seen as a local reduction of the carrier lifetime, in triangular or rectangular shape, which explains the enhanced forward voltage drop in the diodes. The entire stacking faults are also optically active as can be seen as dark triangles and rectangles in low temperature cathodo-luminescence, and the fault and their bounding partial dislocations are seen and identified using synchrotron topography. © 2001 Elsevier Science B.V. All rights reserved.

  • 3.
    Carlsson, Fredrik
    et al.
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
    Sridhara, SG
    Hallen, A
    Bergman, JP
    Janzén, Erik
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    D-II PL intensity dependence on dose, implantation temperature and implanted species in 4H-and 6H-SiC2003In: Materials Science Forum, Vols. 433-436, 2003, Vol. 433-4, p. 345-348Conference paper (Refereed)
    Abstract [en]

    In most semi-conductor processing ion implantation is a key technology. The drawback of ion implantation is that a great deal of lattice defects, such as vacancies, interstitials, anti sites and complexes, are introduced. The annealing behaviour of these defects is important for the viability of ion implantation as a commonly used method. In SiC a defect that is only seen after ion implantation and not after irradiation with neutrons or electrons is the D-II defect. The use of Si or C as implanted species have made it possible to investigate the D-II photoluminescence (PL) intensity dependence on an excess of either of the two constituents in SiC. The effect of performing a hot implant at 600degreesC compared to a room temperature implant was also looked into. The D-II PL intensity was measured after a 1500degreesC anneal. When the implantation was performed at room temperature the C implanted samples showed a significantly higher D-II luminescence than the Si implanted. This makes it tempting to assume that a surplus of C and likely C interstitials are involved in the defect formation. However, when the implantation is done at 600degreesC the difference between Si and C implanted samples almost disappears and a slightly higher D-II intensity can be seen in the Si implanted samples. This effect may be due to the mobility of C interstitials at temperatures above 500degreesC. This clearly demonstrates the effect of hot implantation that there is a major change in D-II PL intensity even after a 1500degreesC anneal.

  • 4.
    Carlsson, Fredrik
    et al.
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
    Storasta, Liutauras
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    Bergman, Peder
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Janzén, Erik
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Trapped carrier electroluminescence (TraCE) - A novel method for correlating electrical and optical measurements2001In: Physica B, Vols. 308-310, 2001, Vol. 308-310, p. 1165-1168Conference paper (Refereed)
    Abstract [en]

    SiC is a semiconductor with very good material properties for high power, high frequency and high temperature applications. During device fabrication irradiation with particles is often used, e.g., ion-implantation, which creates intrinsic defects. The most persistent defect in SiC is DI that appears after irradiation and subsequent high temperature annealing. A direct method called Trapped Carrier Electroluminescence (TraCE) for correlating minority carrier traps with luminescence measurements is presented. A semi-transparent Schottky diode under reverse bias is illuminated with a laser pulse of above band gap light to create minority carriers that are captured to traps in the space charge region. Majority carriers are introduced when the reverse bias is removed and the space charge region is reduced. The majority carriers recombine with the trapped minority carriers and the emitted light from the recombination is detected. TraCE has been used to study and correlate the DI bound exciton luminescence from intrinsic defects in SiC with an electrically observed hole trap HS1. © 2001 Elsevier Science B.V. All rights reserved.

  • 5.
    Carlsson, Fredrik
    et al.
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
    Storasta, Liutauras
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    Hemmingsson, Carl
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    Bergman, Peder
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Janzén, Erik
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    Electroluminescence from implanted and epitaxially grown pn-diodes2000In: Materials Science Forum, Vols. 338-343, Trans Tech Publications Inc., 2000, Vol. 338-3, p. 687-690Conference paper (Refereed)
    Abstract [en]

    The electroluminescence from pn-diodes with (1) aluminum doped epitaxially grown, (2) aluminum implanted or (3) aluminum and boron implanted p-layer have been investigated. The temperature dependence for both the spectra and the decays of the major spectral components have been investigated at temperatures from 80 K to 550 K. The implanted diodes show implantation damage in the form of the D-1 center and lack of emission from the aluminum center. The epitaxial diodes show luminescence from the aluminum center. The band edge luminescence is visible above 150 K for the epitaxial diode and above 300 K for the implanted. The emission from deep boron can be seen in the aluminum and boron co-implanted diode and in the epitaxially grown diode that have an unintentional boron doping below 10(17) cm(-3).

  • 6.
    Carlsson, Fredrik
    et al.
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
    Storasta, Liutauras
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    Magnusson, Björn
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    Bergman, Peder
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Skold, K
    Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden Uppsala Univ, Inst Neutron Res, SE-61182 Nykoping, Sweden.
    Janzén, Erik
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Neutron irradiation of 4H SiC2001In: Materials Science Forum, Vols. 353-356, 2001, Vol. 353-3, p. 555-558Conference paper (Refereed)
    Abstract [en]

    The effect of neutron irradiation on 4H SiC epitaxial layers are studied. Several different doses of both fast and thermal neutrons have been used and the samples have been annealed from 500 degreesC to 2000 degreesC. The defect concentration dependence on the fast neutron flux and on the annealing temperature is investigated. At temperatures from 900 degreesC to 1300 degreesC new lines between 3960 Angstrom and 4270 Angstrom appear. They are similar in behavior to the E-A and D1 spectra and are assumed to be related to excitons bound to isoelectronic centers. After annealing at 2000 degreesC another new line appears at 3809 Angstrom. The similarity of this line with phosphorus in 6H makes us tentatively ascribe it to phosphorus.

  • 7.
    Gali, Adam
    et al.
    Department of Atomic Physics, Budapest Univ. of Technol./Economics, Budafoki út 8, H-1111 Budapest, Hungary.
    Deak, P.
    Deák, P., Department of Atomic Physics, Budapest Univ. of Technol./Economics, Budafoki út 8, H-1111 Budapest, Hungary.
    Rauls, E.
    Theoretische Physik, Universität Paderborn, D-33098 Paderborn, Germany.
    Nguyen, Tien Son
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Ivanov, Ivan Gueorguiev
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    Carlsson, Fredrik
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
    Janzén, Erik
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    Choyke, W.J.
    Department of Physics, University of Pittsburgh, Pittsburgh, PA 15260, United States.
    Anti-site pair in SiC: A model of the DI center2003In: Physica B, 2003, Vol. 340-342, p. 175-179Conference paper (Refereed)
    Abstract [en]

    The DI low-temperature photoluminescence center is a well-known defect stable up to 1700°C annealing in SiC, still its structure is not known after decades of study. Combining experimental and theoretical studies in this paper we will show that the properties of an anti-site pair can reproduce the measured one-electron level position and local vibration modes of the D I center and the model is consistent with other experimental findings as well. We give theoretical values of the hyperfine constants of the anti-site pair in its paramagnetic state as a means to confirm our model. © 2003 Elsevier B.V. All rights reserved.

  • 8.
    Gali, Adam
    et al.
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
    Deak, P
    Rauls, E
    Nguyen, Tien Son
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Ivanov, Ivan Gueorguiev
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    Carlsson, Fredrik
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
    Janzén, Erik
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    Choyke, WJ
    Correlation between the antisite pair and the D-I center in SiC2003In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 67, no 15Article in journal (Refereed)
    Abstract [en]

    The D-I low temperature photoluminescence center is a well-known defect stable up to 1700 degreesC annealing in SiC, still its structure is not yet known. Combining experimental and theoretical studies, in this paper we will show that the properties of an antisite pair can reproduce the measured one-electron level position and local vibration modes of the D-I center, and are consistent with other experimental findings as well. We give theoretical values of the hyperfine constants of the antisite pair in its paramagnetic state as a means to confirm a model.

  • 9. Gali, Adam
    et al.
    Deák, P.
    Rauls, E.
    Nguyen, Son Tien
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    Ivanov, Ivan Gueorguiev
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    Carlsson, Fredrik
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    Janzén, Erik
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    Choyke, W.J.
    Antisites as possible origin of irradiation induced photoluminescence centers in SiC: A theoretical study on clusters of antisites and carbon interstitials in 4H-SiC2004In: Mater. Sci. Forum, Vol. 457-460, Trans Tech Publications Inc. , 2004, p. 443-Conference paper (Refereed)
  • 10.
    Hallen, A.
    et al.
    Hallén, A., Department of Electronics, Royal Institute of Technology, P.O. Box Electrum 229, S 164 40 Kista, Sweden.
    Janson, M.S.
    Department of Electronics, Royal Institute of Technology, P.O. Box Electrum 229, S 164 40 Kista, Sweden.
    Kuznetsov, A.Yu.
    Department of Electronics, Royal Institute of Technology, P.O. Box Electrum 229, S 164 40 Kista, Sweden.
    Aberg, D.
    Åberg, D., Department of Electronics, Royal Institute of Technology, P.O. Box Electrum 229, S 164 40 Kista, Sweden.
    Linnarsson, M.K.
    Department of Electronics, Royal Institute of Technology, P.O. Box Electrum 229, S 164 40 Kista, Sweden.
    Svensson, B.G.
    Department of Electronics, Royal Institute of Technology, P.O. Box Electrum 229, S 164 40 Kista, Sweden, Physical Electronics, Department of Physics, Oslo University, P.O. Box 1048, Blindern, N 0316 Oslo, Norway.
    Persson, Per
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics.
    Carlsson, Fredrik
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
    Storasta, Liutauras
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Bergman, Peder
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Sridhara, S.G
    Zhang, Y.
    Division of Ion Physics, Box 534, Ångström Laboratory, S-751 21 Uppsala, Sweden.
    Ion implantation of silicon carbide2002In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, ISSN 0168-583X, E-ISSN 1872-9584, Vol. 186, no 1-4, p. 186-194Article in journal (Refereed)
    Abstract [en]

    Ion implantation is an important technique for a successful implementation of commercial SiC devices. Much effort has also been devoted to optimising implantation and annealing parameters to improve the electrical device characteristics. However, there is a severe lack of understanding of the fundamental implantation process and the generation and annealing kinetics of point defects and defect complexes. Only very few of the most elementary intrinsic point defects have been unambiguously identified so far. To reach a deeper understanding of the basic mechanisms SiC samples have been implanted with a broad range of ions, energies, doses, etc., and the resulting defects and damage produced in the lattice have been studied with a multitude of characterisation techniques. In this contribution we will review some of the results generated recently and also try to indicate where more research is needed. In particular, deep level transient spectroscopy (DLTS) has been used to investigate point defects at very low doses and transmission electron microscopy (TEM) and Rutherford backscattering spectrometry (RBS) are used for studying the damage build-up at high doses. © 2002 Elsevier Science B.V. All rights reserved.

  • 11.
    Janzén, Erik
    et al.
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    Ivanov, Ivan Gueorguiev
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    Nguyen, Son Tien
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    Magnusson, Björn
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    Zolnai, Z
    Henry, Anne
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    Bergman, Peder
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    Storasta, Liutauras
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    Carlsson, Fredrik
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
    Defects in SiC2003In: Physica B: Condensed Matter, Vols. 340-342, 2003, Vol. 340, p. 15-24Conference paper (Refereed)
    Abstract [en]

    Recent results from studies of shallow donors, pseudodonors, and deep level defects in SiC are presented. The selection rules for transitions between the electronic levels of shallow donors in 4H-SiC in the dipole approximation are derived and the ionization energy for the N donor at hexagonal site is determined. Optical and electrical studies of the D-I center reveal the pseudodonor nature of this defect. Defects in high-purity semi-insulating (SI) SiC substrates including the carbon vacancy (V-C), silicon vacancy (V-Si), and (V-C-C-Si) pair are studied. The annealing behavior of these defects and their role in carrier compensation in SI 4H-SiC are discussed. (C) 2003 Elsevier B.V. All rights reserved.

  • 12.
    Magnusson, Björn
    et al.
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    Ellison, A
    Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden Okmet AB, SE-58330 Linkoping, Sweden.
    Carlsson, Fredrik
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
    Nguyen, Tien Son
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Janzén, Erik
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    As-grown and process-induced intrinsic deep-level luminescence in 4H SiC2001In: Materials Science Forum, Vols. 353-356, Trans Tech Publications Inc., 2001, Vol. 353-356, p. 365-368Conference paper (Refereed)
    Abstract [en]

    A deep level in 4H SiC is studied by photoluminescence (PL) for different annealing temperatures. The luminescence consists of four no-phonon lines between 1.09 and 1.15 eV and their phonon assisted spectra. No splitting or shifting of the lines could be observed in a magnetic field up to 5T. The defect can be introduced in the material by either ion implantation or irradiation, but may also be present in as-grown samples. The PL intensity increases with annealing up to 1000 degreesC, thereafter decreases and vanishes at 1300 degreesC. We tentatively ascribe this deep level defect to a silicon vacancy related complex.

  • 13.
    Sridhara, SG
    et al.
    Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden.
    Carlsson, Fredrik
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
    Bergman, JP
    Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden.
    Henry, Anne
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    Janzén, Erik
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    Investigation of an ion-implantation induced high temperature persistent intrinsic defect in SiC2001In: Materials Science Forum, Vols. 353-356, 2001, Vol. 353-3, p. 377-380Conference paper (Refereed)
    Abstract [en]

    We report a study of the D-II defect spectrum in 6H SiC using different photoluminescence techniques. The spectrum is proposed to be the result of bound exciton recombination at isoelectronic centers.

  • 14. Sridhara, S.G.
    et al.
    Carlsson, Fredrik
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
    Bergman, Peder
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Janzén, Erik
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Luminescence from stacking faults in 4H SiC2001In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 79, no 24, p. 3944-3946Article in journal (Refereed)
    Abstract [en]

    A previously unreported photoluminescence spectrum observed in certain 4H SiC bipolar diodes after extended forward voltage operation is reported. We assign this emission to exciton recombination at local potential fluctuations caused by stacking faults, which are created during operation of the diodes. Possible recombination mechanisms responsible for the spectrum are discussed. © 2001 American Institute of Physics.

  • 15.
    Storasta, Liutauras
    et al.
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    Carlsson, Fredrik
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
    Bergman, Peder
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    Janzén, Erik
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    Recombination enhanced defect annealing in 4H-SiC2005In: Materials Science Forum, Vols. 483-485, 2005, Vol. 483, p. 369-372Conference paper (Refereed)
    Abstract [en]

    Recombination enhanced defect annealing of intrinsic defects in 4H-SiC, created by low energy electron irradiation, has been observed. A reduction the defect concentration at temperature lower than the normal annealing temperature of 400&DEG, C and 800&DEG, C is observed after either above bandgap laser excitation or forward biasing of a pin-diode. The presence of the defects has been studied both electrically and optically using capacitance transient spectroscopy and low temperature photoluminescence. Photoluminescence measurements show that several lines, normally detected after electron irradiation, have almost or entirely disappeared by recombination enhanced annealing at room temperature. From capacitance transient measurements, the annealing enhancement is found to be largest for the HS2 hole trap, while the EH1 and EH3 electron traps also anneal out by recombination enhanced reaction but at a lower rate.

  • 16.
    Storasta, Liutauras
    et al.
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    Carlsson, Fredrik
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
    Sridhara, SG
    Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden Royal Inst Technol, Dept Elect, SE-16440 Kista, Sweden.
    Aberg, D
    Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden Royal Inst Technol, Dept Elect, SE-16440 Kista, Sweden.
    Bergman, Peder
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Hallen, A
    Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden Royal Inst Technol, Dept Elect, SE-16440 Kista, Sweden.
    Janzén, Erik
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    Proton irradiation induced defects in 4H-SiC2001In: Materials Science Forum, Vols. 353-356, 2001, Vol. 353-3, p. 431-434Conference paper (Refereed)
    Abstract [en]

    Defects created by proton irradiation of n-type 4H-SiC epilayers with different fluences and six annealing steps were investigated by Deep Level Transient Spectroscopy (DLTS) and Minority Carrier Transient Spectroscopy (MCTS). Three previously unreported hole traps with energy levels of E-V + 0.35 eV, E-V + 0.44 eV, E-V + 0.80 eV and several electron traps were found. Annealing properties and dependence upon irradiation dose of majority and minority carrier traps is presented. High temperature stability of a E-V + 0.35 eV trap has been demonstrated.

  • 17.
    Storasta, Liutauras
    et al.
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Carlsson, Fredrik
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
    Sridhara, S.G.
    Bergman, Peder
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Henry, Anne
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Egilsson, T.
    Hallen, A.
    Janzén, Erik
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Pseudodonor nature of the D1 defect in 4H-SiC2001In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 78, no 1, p. 46-48Article in journal (Refereed)
    Abstract [en]

    We use the recent findings about the pseudodonor character of the D1 defect to establish an energy-level scheme in the band gap for the defect, predicting the existence of a hole trap at about 0.35 eV above the valence band. Using minority carrier transient spectroscopy, we prove that the D1 defect indeed is correlated to such a hole trap. In addition, we show that the D1 defect is not correlated to the Z1/2 electron trap, in contrast to what was previously reported. © 2001 American Institute of Physics.

  • 18. Svensson, BG
    et al.
    Hallen, A
    Royal Inst Technol, SE-16440 Kista, Sweden Univ Oslo, Dept Phys, NO-0316 Oslo, Norway Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden Australian Natl Univ, Canberra, ACT 0200, Australia CSIC, CNM, ES-08193 Bellaterra, Spain.
    Linnarsson, MK
    Royal Inst Technol, SE-16440 Kista, Sweden Univ Oslo, Dept Phys, NO-0316 Oslo, Norway Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden Australian Natl Univ, Canberra, ACT 0200, Australia CSIC, CNM, ES-08193 Bellaterra, Spain.
    Kuznetsov, AY
    Royal Inst Technol, SE-16440 Kista, Sweden Univ Oslo, Dept Phys, NO-0316 Oslo, Norway Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden Australian Natl Univ, Canberra, ACT 0200, Australia CSIC, CNM, ES-08193 Bellaterra, Spain.
    Janson, MS
    Aberg, D
    Royal Inst Technol, SE-16440 Kista, Sweden Univ Oslo, Dept Phys, NO-0316 Oslo, Norway Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden Australian Natl Univ, Canberra, ACT 0200, Australia CSIC, CNM, ES-08193 Bellaterra, Spain.
    Osterman, J
    Royal Inst Technol, SE-16440 Kista, Sweden Univ Oslo, Dept Phys, NO-0316 Oslo, Norway Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden Australian Natl Univ, Canberra, ACT 0200, Australia CSIC, CNM, ES-08193 Bellaterra, Spain.
    Persson, Per
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics.
    Hultman, Lars
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics.
    Storasta, Liutauras
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    Carlsson, Fredrik
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
    Bergman, JP
    Royal Inst Technol, SE-16440 Kista, Sweden Univ Oslo, Dept Phys, NO-0316 Oslo, Norway Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden Australian Natl Univ, Canberra, ACT 0200, Australia CSIC, CNM, ES-08193 Bellaterra, Spain.
    Jagadish, C
    Royal Inst Technol, SE-16440 Kista, Sweden Univ Oslo, Dept Phys, NO-0316 Oslo, Norway Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden Australian Natl Univ, Canberra, ACT 0200, Australia CSIC, CNM, ES-08193 Bellaterra, Spain.
    Morvan, E
    Royal Inst Technol, SE-16440 Kista, Sweden Univ Oslo, Dept Phys, NO-0316 Oslo, Norway Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden Australian Natl Univ, Canberra, ACT 0200, Australia CSIC, CNM, ES-08193 Bellaterra, Spain.
    Doping of silicon carbide by ion implantation2001In: Materials Science Forum, Vols. 353-356, Trans Tech Publications Inc., 2001, Vol. 353-356, p. 549-554Conference paper (Refereed)
    Abstract [en]

    A brief survey is given of some recent results on doping of 4H- and 6H-SiC by ion implantation. The doses and energies used are between 10(9) and 10(15) cm(-2) and 100 keV and 5 MeV, respectively, and B and Al ions (p-type dopants) are predominantly studied. After low dose implantation (less than or equal to 10(10) cm(-2)) a strong compensation is observed in n-type samples and this holds irrespective of implantation temperature up to 600 degreesC. However, at higher doses (10(14)-10(15) Al/cm(2)) the rate of defect recombination (annihilation) increases substantially during hot implants (greater than or equal to 200 degreesC) and in these samples one type of structural defect dominates after past-implant annealing at 1700-2000 degreesC. The defect is identified as a dislocation loop composed of clustered interstitial atoms inserted on the basal plane in the hexagonal crystal structure. Finally, transient enhanced diffusion (TED) of ion-implanted boron in 4H-samples is discussed.

1 - 18 of 18
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