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  • 1.
    Yang, Li Li
    et al.
    Linköping University, Department of Science and Technology. Linköping University, The Institute of Technology.
    Zhao, Qingxiang
    Linköping University, Department of Science and Technology. Linköping University, The Institute of Technology.
    Israr, Muhammad Qadir
    Linköping University, Department of Science and Technology. Linköping University, The Institute of Technology.
    Sadaf, Jamil Rana
    Linköping University, Department of Science and Technology. Linköping University, The Institute of Technology.
    Willander, Magnus
    Linköping University, Department of Science and Technology. Linköping University, The Institute of Technology.
    Pozina, Galia
    Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
    Yang, J. H.
    Institute of Condensed State Physics, Jilin Normal University, Siping, 136000, People's Republic of China.
    Indirect optical transition due to surface band bending in ZnO nanotubes2010In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 108, no 10Article in journal (Refereed)
    Abstract [en]

    ZnO nanotubes (ZNTs) have been successfully evolved from ZnO nanorods (ZNRs) by a simple chemical etching process. Two peaks located at 382 nm and 384 nm in the UV emission region has been observed in the room temperature photoluminescence (PL) spectrum of ZNTs since the surface band bending in ZNTs induces the coexistence of indirect and direct transitions in their emission process. In addition, a strong enhancement of total luminescence intensity at room temperature in ZNTs has also be observed in comparison with that of ZNRs. Both temperature-dependent PL and time-resolved PL results not only further testify the coexistence of indirect and direct transitions due to the surface band bending, but also reveal that less nonradiative contribution to the emission process in ZNTs finally causes their stronger luminescence intensity.

  • 2.
    Yang, Li Li
    et al.
    Linköping University, Department of Science and Technology. Linköping University, The Institute of Technology.
    Zhao, Qingxiang
    Linköping University, Department of Science and Technology. Linköping University, The Institute of Technology.
    Xing, G. Z.
    Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, NanyangTechnological University, Singapore.
    Wang, D. D.
    Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, NanyangTechnological University, Singapore.
    Wu, T.
    Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, NanyangTechnological University, Singapore.
    Willander, Magnus
    Linköping University, Department of Science and Technology. Linköping University, The Institute of Technology.
    Ivanov, Ivan Gueorguiev
    Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
    Yang, J. H.
    Institute of Condensed State Physics, Jilin Normal University, Siping, 136000, People's Republic of China.
    Mg diffusion in Zn0.94Mg0.06O/ZnO heterostructures grown by MOCVDManuscript (preprint) (Other academic)
    Abstract [en]

    Zn0.94Mg0.06O/ZnO heterostructures were grown on 2 inch sapphire wafer by MOCVD equipment. Photoluminescence mapping demonstrated that Mg uniformly distributed on the entire wafer with average concentration of ~6%. The annealing effects on the Mg diffusion behaviors were investigated by secondary ion mass spectrometry (SIMS). All Mg SIMS depth profiles were fitted by three Gaussian distribution functions. The Mg diffusion coefficient in the as-grown Zn0.94Mg0.06O layer deposited at 700 oC was two order of magnitude lower than that of annealed samples, which indicated that the deposition temperature of 700 oC is much more beneficial to grow ZnMgO/ZnO heterostructures or quantum wells.

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