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  • 1.
    Amloy, Supaluck
    et al.
    Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology. Thaksin University, Thailand.
    Karlsson, K. Fredrik
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Eriksson, Martin O
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Palisaitis, Justinas
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Persson, Per O. Å.
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Chen, Y. T.
    Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology. Academia Sinica, Taiwan .
    Chen, K. H.
    Academia Sinica, Taiwan; National Taiwan University, Taiwan.
    Hsu, H. C.
    National Taiwan University, Taiwan.
    Hsiao, C. L.
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology. National Taiwan University, Taiwan.
    Chen, L. C.
    National Taiwan University, Taiwan.
    Holtz, Per-Olof
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Excitons and biexcitons in InGaN quantum dot like localization centers2014In: Nanotechnology, ISSN 0957-4484, Vol. 25, no 49, p. 495702-Article in journal (Refereed)
    Abstract [en]

    Indium segregation in a narrow InGaN single quantum well creates quantum dot (QD) like exciton localization centers. Cross-section transmission electron microscopy reveals varying shapes and lateral sizes in the range ∼1–5 nm of the QD-like features, while scanning near field optical microscopy demonstrates a highly inhomogeneous spatial distribution of optically active individual localization centers. Microphotoluminescence spectroscopy confirms the spectrally inhomogeneous distribution of localization centers, in which the exciton and the biexciton related emissions from single centers of varying geometry could be identified by means of excitation power dependencies. Interestingly, the biexciton binding energy (Ebxx) was found to vary from center to center, between 3 to −22 meV, in correlation with the exciton emission energy. Negative binding energies are only justified by a three-dimensional quantum confinement, which confirms QD-like properties of the localization centers. The observed energy correlation is proposed to be understood as variations of the lateral extension of the confinement potential, which would yield smaller values of Ebxx for reduced lateral extension and higher exciton emission energy. The proposed relation between lateral extension and Ebxx is further supported by the exciton and the biexciton recombination lifetimes of a single QD, which suggest a lateral extension of merely ∼3 nm for a QD with strongly negative Ebxx = −15.5 meV. 

  • 2.
    Amloy, Supaluck
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Moskalenko, Evgenii
    Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
    Eriksson, M
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Karlsson, K Fredrik
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Chen, Y T
    Academic Sinica, Taiwan .
    Chen, K H
    Academic Sinica, Taiwan National Taiwan University, Taiwan .
    Hsu, H C
    National Taiwan University, Taiwan .
    Hsiao, C L
    National Taiwan University, Taiwan .
    Chen, L C
    National Taiwan University, Taiwan .
    Holtz, Per-Olof
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Dynamic characteristics of the exciton and the biexciton in a single InGaN quantum dot2012In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 101, no 6Article in journal (Refereed)
    Abstract [en]

    The dynamics of the exciton and the biexciton related emission from a single InGaN quantum dot (QD) have been measured by time-resolved microphotoluminescence spectroscopy. An exciton-biexciton pair of the same QD was identified by the combination of power dependence and polarization-resolved spectroscopy. Moreover, the spectral temperature evolution was utilized in order to distinguish the biexciton from a trion. Both the exciton and the biexciton related emission reveal mono-exponential decays corresponding to time constants of similar to 900 and similar to 500 ps, respectively. The obtained lifetime ratio of similar to 1.8 indicates that the QD is small, with a size comparable to the exciton Bohr radius.

  • 3.
    Eriksson, Martin. O.
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Hsu, Chih-Wei
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Lundskog, Anders
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Karlsson, K. Fredrik
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Bergman, Peder
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Janzén, Erik
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Holtz, Per-Olof
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    The Dynamics of Charged and Neutral Excitons in an InGaN Quantum Dot on a GaN PyramidManuscript (preprint) (Other academic)
    Abstract [en]

    The neutral (X0) and negatively charged excitons (X-) in an InGaN QD on a GaN pyramid is studied by the timeintegrated micro-photoluminescence (μPL) and time-resolved micro-photoluminescence (TRμPL) microcopies. Both X0 and X- exhibit mono-exponential decay curves with fitted lifetimes of 310 and 140 ps, respectively. Neither energy shifts nor changes in the life times X0 and X- with increasing excitation power were observed, indicating the QD is small and free from the quantum confine Stark effect. The TRμPL is not only a powerful technique for studying the dynamics of exciton in QDXs, but also for the identification of exciton complexes in QDs.

  • 4.
    Hsu, Chih-Wei
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Moskalenko, Evgenii
    Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
    Eriksson, Martin
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Lundskog, Anders
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Karlsson, Fredrik K.
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Forsberg, Urban
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Janzén, Erik
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Holtz, Per-Olof
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    The charged exciton in an InGaN quantum dot on a GaN pyramid2013In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 103, no 1Article in journal (Refereed)
    Abstract [en]

    The emission of a charged exciton in an InGaN quantum dot (QD) on top of a GaN pyramid is identified experimentally. The intensity of the charged exciton exhibits the expected competition with that of the single exciton, as observed in temperature-dependent micro-photoluminescence measurements, performed with different excitation energies. The non-zero charge state of this complex is further supported by time resolved micro-photoluminescence measurements, which excludes neutral alternatives of biexciton. The potential fluctuations in the vicinity of the QD that localizes the charge carriers are proposed to be responsible for the unequal supply of electrons and holes into the QD.

  • 5.
    Hsu, Hsu-Cheng
    et al.
    National Cheng Kung University, Taiwan .
    Huang, Hsin-Ying
    National Cheng Kung University, Taiwan .
    Eriksson, Martin
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    Dai, Tsen-Fang
    National Cheng Kung University, Taiwan .
    Holtz, Per-Olof
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Surface related and intrinsic exciton recombination dynamics in ZnO nanoparticles synthesized by a sol-gel method2013In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 102, no 1, p. 013109-Article in journal (Refereed)
    Abstract [en]

    ZnO nanoparticles with controlled sizes produced by a sol-gel method are studied by means of time-integrated as well as time-resolved photoluminescence (TRPL) spectroscopy. Room-temperature photoluminescence spectra show a blueshift of the excitonic emission with the decreasing particle size, which is attributed to the quantum confinement effect. The temperature dependence of the exciton lifetimes deduced from the TRPL results contains two components: the fast decay is attributed to surface trapping of exciton and the slow decay is mainly representative of the radiative processes involving the bound or free excitons.

  • 6.
    Ibupoto, Zafar Hussain
    et al.
    Linköping University, Department of Science and Technology, Physics and Electronics. Linköping University, The Institute of Technology.
    Khun, Kimleang
    Linköping University, Department of Science and Technology, Physics and Electronics. Linköping University, The Institute of Technology.
    Eriksson, Martin
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    AlSalhi, Mohammad
    King Saud University, Riyadh, Saudi Arabia .
    Atif, Muhammad
    King Saud University, Riyadh, Saudi Arabia .
    Ansari, Anees
    King Saud University, Riyadh, Saudi Arabia .
    Willander, Magnus
    Linköping University, Department of Science and Technology, Physics and Electronics. Linköping University, The Institute of Technology. King Saud University, Riyadh, Saudi Arabia .
    Hydrothermal Growth of Vertically Aligned ZnO Nanorods Using a Biocomposite Seed Layer of ZnO Nanoparticles2013In: Materials, ISSN 1996-1944, E-ISSN 1996-1944, Vol. 6, no 8, p. 3584-3597Article in journal (Refereed)
    Abstract [en]

    Well aligned ZnO nanorods have been prepared by a low temperature aqueous chemical growth method, using a biocomposite seed layer of ZnO nanoparticles prepared in starch and cellulose bio polymers. The effect of different concentrations of biocomposite seed layer on the alignment of ZnO nanorods has been investigated. ZnO nanorods grown on a gold-coated glass substrate have been characterized by X-ray diffraction (XRD) and field emission scanning electron microscopy (FESEM) techniques. These techniques have shown that the ZnO nanorods are well aligned and perpendicular to the substrate, and grown with a high density and uniformity on the substrate. Moreover, ZnO nanorods can be grown with an orientation along the c-axis of the substrate and exhibit a wurtzite crystal structure with a dominant (002) peak in an XRD spectrum and possessed a high crystal quality. A photoluminescence (PL) spectroscopy study of the ZnO nanorods has revealed a conventional near band edge ultraviolet emission, along with emission in the visible part of the electromagnetic spectrum due to defect emission. This study provides an alternative method for the fabrication of well aligned ZnO nanorods. This method can be helpful in improving the performance of devices where alignment plays a significant role.

  • 7.
    Khranovskyy, Volodymyr
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Eriksson, Martin O.
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Radnóczi, György Zoltán
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Khalid, Abbas
    University of Dublin Trinity Coll, Ireland.
    Zhang, Hongzhou
    University of Dublin Trinity Coll, Ireland.
    Holtz, Per-Olof
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Yakimova, Rositsa
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Correction: Photoluminescence study of basal plane stacking faults in ZnO nanowires (vol 4639, pg 50, 2014)2014In: Physica. B, Condensed matter, ISSN 0921-4526, E-ISSN 1873-2135, Vol. 454, p. 279-279Article in journal (Other academic)
    Abstract [en]

    n/a

  • 8.
    Khranovskyy, Volodymyr
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Tsiaoussis, Ioannis
    Aristotle University of Thessaloniki, Greece.
    Eriksson, Martin
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Yakimova, Rositsa
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Effect of Ag doping on the microstructure and photoluminescence of ZnO nanostructures2014In: Physica Status Solidi (a) applications and materials science, ISSN 1862-6300, E-ISSN 1862-6319, Vol. 211, no 9, p. 2109-2114Article in journal (Refereed)
    Abstract [en]

    ZnO nanostructures were obtained by metal-organic chemical vapor deposition via Ag catalyst-assisted growth in a temperature range of 200-500 degrees C. Growth at temperatures above 500 degrees C resulted in vertically aligned ZnO nanorods (NLs). Ag incorporation into ZnO up to 0.4 at.% promoted creation of basal plane stacking fault (BSF) defects and corrugation of the side facets of the NLs. The presence of BSFs give rise to an additional photoluminescence peak with a wavelength of similar to 386 nm, which is slightly red-shifted compared to the commonly observed NBE emission at similar to 375 nm. The observed emission was found to be specifically observed from the side facets of the NLs. It is suggested that this emission is due to a high concentration of BSFs in the ZnO as a result of an incorporation of Ag as acceptor dopant. [GRAPHICS] SEM image of an Ag-doped ZnO nanorod with corrugated side facets. The observed corrugation is accompanied by a high concentration of basal plane stacking faults.

  • 9.
    Lundskog, Anders
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Palisaitis, Justinas
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Hsu, Chih-Wei
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Eriksson, Martin
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Karlsson, Fredrik
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Persson, Per
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Forsberg, Urban
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Holtz, Per-Olof
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Janzén, Erik
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    InGaN quantum dot formation mechanism on hexagonal GaN/InGaN/GaN pyramids2012In: Nanotechnology, ISSN 0957-4484, E-ISSN 1361-6528, Vol. 23, no 30, p. 305708-Article in journal (Refereed)
    Abstract [en]

    Growing InGaN quantum dots (QDs) at the apex of hexagonal GaN pyramids is an elegant approach to achieve a deterministic positioning of QDs. Despite similar synthesis procedures by metal–organic chemical vapor deposition, the optical properties of the QDs reported in the literature vary drastically. The QDs tend to exhibit either narrow or broad emission lines in the micro-photoluminescence spectra. By coupled microstructural and optical investigations, the QDs giving rise to narrow emission lines were concluded to nucleate in association with a (0001) facet at the apex of the GaN pyramid.

  • 10.
    Masuda, Rui
    et al.
    Tokyo University of Agriculture and Technology.
    Hsu, Chih-Wei
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Eriksson, Martin
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Kumagai, Yoshinao
    Tokyo University of Agriculture and Technology.
    Koukitu, Akinori
    Tokyo University of Agriculture and Technology.
    Holtz, Per-Olof
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Improvements in Optical Properties of (0001) ZnO Layers Grown on (0001) Sapphire Substrates by Halide Vapor Phase Epitaxy Using Thick Buffer Layers2012In: Japanese Journal of Applied Physics, ISSN 0021-4922, E-ISSN 1347-4065, Vol. 51, no 3, p. 031103-Article in journal (Refereed)
    Abstract [en]

    The optical properties of (0001) ZnO layers grown at 1000 degrees C on (0001) sapphire substrates by halide vapor phase epitaxy (HVPE) were investigated by various photoluminescence (PL) measurements. A layer grown with a H2O/ZnCl2 (VI/II) ratio of 20 on a 0.4-mu m-thick buffer layer exhibited a significant near-band-edge (NBE) peak blueshift and degraded internal quantum efficiency (eta(int)) due to residual compressive stress. Growth with a VI/II ratio of 600 diminished the NBE peak blueshift; however, deep level emission and a reduction of PL decay time (tau(PL)) were caused by point defects generated by excess O source supply. A layer without the NBE peak blueshift and deep level emission was realized by growth with a VI/II ratio of 20 and a buffer layer of 0.8 mu m. The eta(int) and tau(PL) for HVPE-grown layers could be improved to 4.1% and 122.8 ps by using the thick buffer layer and appropriate VI/II ratio.

  • 11.
    Sadollah Khani, Azar
    et al.
    Linköping University, Department of Science and Technology, Physics and Electronics. Linköping University, The Institute of Technology. Shahid Chamran University, Iran.
    Nour, Omer
    Linköping University, Department of Science and Technology, Physics and Electronics. Linköping University, The Institute of Technology.
    Willander, Magnus
    Linköping University, Department of Science and Technology, Physics and Electronics. Linköping University, The Institute of Technology.
    Kazeminezhad, Iraj
    Shahid Chamran University, Iran.
    Khranovskyy, Volodymyr
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Eriksson, Martin O.
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
    Yakimova, Rositsa
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Holtz, Per-Olof
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    A detailed optical investigation of ZnO@ZnS core-shell nanoparticles and their photocatalytic activity at different pH values2015In: Ceramics International, ISSN 0272-8842, E-ISSN 1873-3956, Vol. 41, no 5, p. 7174-7184Article in journal (Refereed)
    Abstract [en]

    In this study zinc oxide nanoparticles (NPs) were synthesized via a co-precipitation method and were covered by zinc sulfate using a chemical approach at a temperature of 60 degrees C forming ZnO@ZnS core-shell nanoparticles (CSNPs). In order to investigate the effect of the shell thickness on the optical and photocatalytic properties, many samples were grown with different concentration of the sulfur source. The results show that, covering ZnO with ZnS leads to form a type II band alignment system. In addition, the band gap of the ZnO@ZnS CSNPs was found less than both of the core and the shell materials. Also the emission peak intensity of the ZnO NPs changes as a result of manipulating oxygen vacancies via covering. The photocatalytic activity of the ZnO@ZnS CSNPs was invpstigated for degradation of the Congo red dye. As dye pollutants can be found in mediums with different pH, the experiments were performed at three pH values to determine the best photocatalyst for each pH. Congo red dye degradation experiments indicate that the ZnO@ZnS CSNPs act more efficiently as a photcatalyst at pH values of 4 and 7 compare to the pure ZnO NPs.

  • 12.
    Sodzel, Dzmitry
    et al.
    Institute of Biophysics and Cell Engineering of National Academy of Sciences of Belarus, Belarus .
    Khranovskyy, Volodymyr
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
    Beni, Valerio
    Linköping University, Department of Physics, Chemistry and Biology, Biosensors and Bioelectronics. Linköping University, Faculty of Science & Engineering.
    Turner, Anthony P F
    Linköping University, Department of Physics, Chemistry and Biology, Biosensors and Bioelectronics. Linköping University, Faculty of Science & Engineering.
    Viter, Roman
    National Science Center FOTONIKA-LV, University of Latvia, Riga, Latvia; Odessa National I.I. Mechnikov University, Odessa, Ukraine .
    Eriksson, Martin O
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
    Holtz, Per-Olof
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
    Janot, Jean-Marc
    Institut Européen des Membranes, UMR5635 ENSCM UM CNRS, Université Montpellier, Montpellier cedex 5, France .
    Bechelany, Mikhael
    Institut Européen des Membranes, UMR5635 ENSCM UM CNRS, Université Montpellier, Montpellier cedex 5, France .
    Belma, Sebastien
    Institut Européen des Membranes, UMR5635 ENSCM UM CNRS, Université Montpellier, Montpellier cedex 5, France .
    Smyntyna, Valentyn
    Odessa National I.I. Mechnikov University, Odessa, Ukraine .
    Kolesneva, Ekaterina
    Institute of Biophysics and Cell Engineering of National Academy of Sciences of Belarus, Minsk, Belarus .
    Dubovskaya, Lyudmila
    Institute of Biophysics and Cell Engineering of National Academy of Sciences of Belarus, Minsk, Belarus.
    Volotovski, Igor
    Institute of Biophysics and Cell Engineering of National Academy of Sciences of Belarus, Minsk, Belarus.
    Ubelis, Arnolds
    National Science Center FOTONIKA-LV, University of Latvia, Riga, Latvia .
    Yakimova, Rositsa
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
    Control of hydrogen peroxide and glucose via UV and Visible Photoluminescence of ZnO nanoparticles.2015In: Microchimica Acta, ISSN 0026-3672, E-ISSN 1436-5073, Vol. 182, no 9-10, p. 1819-1826Article in journal (Refereed)
    Abstract [en]

    We report on an indirect optical method for the determination of glucose via the detection of hydrogen peroxide (H2O2) that is generated during the glucose oxidase (GOx) catalyzed oxidation of glucose. It is based on the finding that the ultraviolet (~374 nm) and visible (~525 nm) photoluminescence of pristine zinc oxide (ZnO) nanoparticles strongly depends on the concentration of H2O2 in water solution. Photoluminescence is quenched by up to 90 % at a 100 mM level of H2O2. The sensor constructed by immobilizing GOx on ZnO nanoparticles enabled glucose to be continuously monitored in the 10 mM to 130 mM concentration range, and the limit of detection is 10 mM. This enzymatic sensing scheme is supposed to be applicable to monitoring glucose in the food, beverage and fermentation industries. It has a wide scope in that it may be extended to numerous other substrate or enzyme activity assays based on the formation of H2O2, and of assays based on the consumption of H2O2 by peroxidases.

  • 13.
    Sun, Jianwu W.
    et al.
    Université Montpellier 2 and CNRS, France.
    Khranovskyy, Volodymyr
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Mexis, M.
    Université Montpellier 2 and CNRS, France .
    Eriksson, Martin
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Syväjärvi, Mikael
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Tsiaoussis, I.
    Aristotle University of Thessaloniki, Greece.
    Yazdi, Gholamreza
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Peyre, H.
    Université Montpellier 2 and CNRS, France.
    Juillaguet, S.
    Université Montpellier 2 and CNRS, France.
    Camassel, J.
    Université Montpellier 2 and CNRS, France.
    Holtz, Per-Olof
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Bergman, Peder
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Yakimova, Rositsa
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Comparative micro-photoluminescence investigation of ZnO hexagonal nanopillars and the seeding layer grown on 4H-SiC2012In: Journal of Luminescence, ISSN 0022-2313, E-ISSN 1872-7883, Vol. 132, no 1, p. 122-127Article in journal (Refereed)
    Abstract [en]

    We report on a comparative micro-photoluminescence investigation of ZnO hexagonal nanopillars (HNPs) and the seeding layer grown on the off-axis 4H-SiC substrate. Transmission electron microscope (TEM) results establish that a thin seeding layer continuously covers the terraces of 4H-SiC prior to the growth of ZnO HNPs. Low temperature photoluminescence (LTPL) shows that ZnO HNPs are only dominated by strong donor bound exciton emissions without any deep level emissions. Micro-LTPL mapping demonstrates that this is specific also for the seeding layer. To further understand the recombination mechanisms, time-resolved micro-PL spectra (micro-TRPL) have been collected at 5 K and identical bi-exponential decays have been found on both the HNPs and seeding layer. Temperature-dependent TRPL indicates that the decay time of donor bound exciton is mainly determined by the contributions of non-radiative recombinations. This could be explained by the TEM observation of the non-radiative defects in both the seeding layer and HNPs, like domain boundaries and dislocations, generated at the ZnO/SiC interface due to biaxial strain.

  • 14.
    Urgessa, Z. N.
    et al.
    Nelson Mandela Metropolitan University, South Africa.
    Botha, J. R.
    Nelson Mandela Metropolitan University, South Africa.
    Eriksson, Martin O.
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Mbulanga, C. M.
    Nelson Mandela Metropolitan University, South Africa.
    Dobson, S. R.
    Nelson Mandela Metropolitan University, South Africa.
    Tankio Djiokap, S. R.
    Nelson Mandela Metropolitan University, South Africa.
    Karlsson, K. Fredrik
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Khranovskyy, Volodymyr
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Yakimova, Rositsa
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Holtz, Per-Olof
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Low temperature near band edge recombination dynamics in ZnO nanorods2014In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 116, no 12, p. 123506-Article in journal (Refereed)
    Abstract [en]

    The recombination dynamics of neutral donor bound excitons ((DX)-X-o: I-4, I-6/6a) and near band edge defect-related emission in solution grown ZnO nanorods are investigated using steady state and time-resolved photoluminescence (PL) measurements. The effects of annealing are also studied. Low temperature steady state PL shows a systematic removal of the I-4 line after annealing at 450 degrees C and the subsequent domination of I-6a in these PL spectra. Additionally, the time decay of the I-4, I-6/6a, free exciton (FX), and basal plane stacking fault-related (BSF) PL transitions are studied as a function of annealing temperature. For the various annealing temperatures studied, the PL decay is described by a bi-exponential profile with a fast component (contribution from the surface) and slow component (related to bulk recombination). The fast component dominates in the case of as-grown and low temperature annealed samples (anneal temperatures up to 300 degrees C), suggesting the presence of surface adsorbed impurities. For samples annealed above 400 degrees C, the effects of the surface are reduced. The sample annealed at 850 degrees C produced an overall enhancement of the crystal quality. The underlying mechanisms for the observed PL characteristics are discussed based on near surface band bending caused by surface impurities.

  • 15.
    Yang, S.
    et al.
    National Synchrotron Radiation Research Center, Hsinchu, Taiwan .
    Hsu, H. C.
    National Cheng Kung University, Taiwan.
    Liu, W-R.
    National Synchrotron Radiation Research Center, Hsinchu, Taiwan.
    Lin, B. H.
    National Synchrotron Radiation Research Center, Hsinchu, Taiwan.
    Kuo, C. C.
    National Chiao Tung University, Hsinchu, Taiwan .
    Hsu, C-H.
    National Synchrotron Radiation Research Center, Hsinchu, Taiwan .
    Eriksson, Martin
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Holtz, Per-Olof
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Hsieh, W. F.
    National Chiao Tung University, Hsinchu, Taiwan .
    Recombination dynamics of a localized exciton bound at basal stacking faults within the m-(p)lane ZnO film2014In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 105, no 1, p. 011106-Article in journal (Refereed)
    Abstract [en]

    We investigated the carrier dynamics near basal stacking faults (BSFs) in m-plane ZnO epitaxial film. The behaviors of the type-II quantum wells related to the BSFs are verified through time-resolved and time-integrated photoluminescence. The decay time of the emission of BSFs is observed to have a higher power law value and longer decay time than the emission of the donor-bound excitons. The spectral-dependent decay times reveal a phenomenon of carriers migrating among band tail states, which are related to the spatial distribution of the type-II quantum wells formed by the BSFs. A high density of excited carriers leads to a band bending effect, which in turn causes a blue-shift of the emission peak of BSFs with a broadened distribution of band tail states.

  • 16.
    Yang, S
    et al.
    National Chiao Tung University, Taiwan National Chiao Tung University, Taiwan .
    Lin, B H
    National Synchrotron Radiat Research Centre, Taiwan National Chiao Tung University, Taiwan National Chiao Tung University, Taiwan .
    Kuo, C C
    National Chiao Tung University, Taiwan National Chiao Tung University, Taiwan .
    Hsu, H C
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. National Cheng Kung University, Taiwan National Cheng Kung University, Taiwan National Cheng Kung University, Taiwan .
    Liu, W-R
    National Synchrotron Radiat Research Centre, Taiwan National Chiao Tung University, Taiwan National Chiao Tung University, Taiwan .
    Eriksson, M O
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Holtz, Per-Olof
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Chang, C-S
    National Chiao Tung University, Taiwan National Chiao Tung University, Taiwan .
    Hsu, C-H
    National Synchrotron Radiat Research Centre, Taiwan National Chiao Tung University, Taiwan National Chiao Tung University, Taiwan .
    Hsieh, W F
    National Chiao Tung University, Taiwan National Chiao Tung University, Taiwan National Cheng Kung University, Taiwan National Cheng Kung University, Taiwan .
    Improvement of Crystalline and Photoluminescence of Atomic Layer Deposited m-Plane ZnO Epitaxial Films by Annealing Treatment2012In: Crystal Growth & Design, ISSN 1528-7483, E-ISSN 1528-7505, Vol. 12, no 10, p. 4745-4751Article in journal (Refereed)
    Abstract [en]

    Monocrystalline m-plane ZnO epitaxial films with flat surface morphology were grown on m-plane sapphire by using atomic layer deposition. X-ray diffraction and transmission electron microscopy measurements verify not only the in-plane epitaxial relationship of the as-grown films as (10 (1) over bar0)andlt; 0001 andgt;(ZnO)parallel to(10 (1) over bar0)andlt;(1) over bar2 (1) over bar0 andgt; Al2O3 but also the absence of domains with undesirable orientations, which are generally obtained in the m-plane ZnO films grown by other methods. Experimental results indicate that the basal plane stacking fault (BSF) is the dominant structural defects that contribute to the emission at 3.31 eV in m-plane ZnO films. Exactly how thermal annealing affects the structural and optical properties of ZnO epi-films was also investigated. Additionally, based on time-resolved photoluminescence at 5 K, the decay time of BSF related emission and near-band-edge (NBE) emission were determined. Results of this work further demonstrated that the decay time of NBE emission increases with a higher annealing temperature, accompanied by an improvement in crystal structure.

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