liu.seSök publikationer i DiVA
Ändra sökning
Avgränsa sökresultatet
1 - 17 av 17
RefereraExporteraLänk till träfflistan
Permanent länk
Referera
Referensformat
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Annat format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annat språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf
Träffar per sida
  • 5
  • 10
  • 20
  • 50
  • 100
  • 250
Sortering
  • Standard (Relevans)
  • Författare A-Ö
  • Författare Ö-A
  • Titel A-Ö
  • Titel Ö-A
  • Publikationstyp A-Ö
  • Publikationstyp Ö-A
  • Äldst först
  • Nyast först
  • Skapad (Äldst först)
  • Skapad (Nyast först)
  • Senast uppdaterad (Äldst först)
  • Senast uppdaterad (Nyast först)
  • Disputationsdatum (tidigaste först)
  • Disputationsdatum (senaste först)
  • Standard (Relevans)
  • Författare A-Ö
  • Författare Ö-A
  • Titel A-Ö
  • Titel Ö-A
  • Publikationstyp A-Ö
  • Publikationstyp Ö-A
  • Äldst först
  • Nyast först
  • Skapad (Äldst först)
  • Skapad (Nyast först)
  • Senast uppdaterad (Äldst först)
  • Senast uppdaterad (Nyast först)
  • Disputationsdatum (tidigaste först)
  • Disputationsdatum (senaste först)
Markera
Maxantalet träffar du kan exportera från sökgränssnittet är 250. Vid större uttag använd dig av utsökningar.
  • 1.
    Argillander, Joakim
    et al.
    Linköpings universitet, Institutionen för systemteknik, Informationskodning. Linköpings universitet, Tekniska fakulteten.
    Alarcon, Alvaro
    Linköpings universitet, Institutionen för systemteknik, Informationskodning. Linköpings universitet, Tekniska fakulteten.
    Bao, Chunxiong
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Elektroniska och fotoniska material. Linköpings universitet, Tekniska fakulteten. Nanjing Univ, Peoples R China.
    Kuang, Chaoyang
    Linköpings universitet, Tekniska fakulteten. Linköpings universitet, Institutionen för teknik och naturvetenskap, Laboratoriet för organisk elektronik.
    Lima, Gustavo
    Univ Concepcion, Chile.
    Gao, Feng
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Elektroniska och fotoniska material. Linköpings universitet, Tekniska fakulteten.
    Xavier, Guilherme B.
    Linköpings universitet, Institutionen för systemteknik, Informationskodning. Linköpings universitet, Tekniska fakulteten.
    Quantum random number generation based on a perovskite light emitting diode2023Ingår i: Communications Physics, E-ISSN 2399-3650, Vol. 6, nr 1, artikel-id 157Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    True random number generation is not thought to be possible using a classical approach but by instead exploiting quantum mechanics genuine randomness can be achieved. Here, the authors demonstrate a certified quantum random number generation using a metal-halide perovskite light emitting diode as a source of weak coherent polarisation states randomly producing an output of either 0 or 1. The recent development of perovskite light emitting diodes (PeLEDs) has the potential to revolutionize the fields of optical communication and lighting devices, due to their simplicity of fabrication and outstanding optical properties. Here we demonstrate that PeLEDs can also be used in the field of quantum technologies by implementing a highly-secure quantum random number generator (QRNG). Modern QRNGs that certify their privacy are posed to replace classical random number generators in applications such as encryption and gambling, and therefore need to be cheap, fast and with integration capabilities. Using a compact metal-halide PeLED source, we generate random numbers, which are certified to be secure against an eavesdropper, following the quantum measurement-device-independent scenario. The obtained generation rate of more than 10 Mbit s(-1), which is already comparable to commercial devices, shows that PeLEDs can work as high-quality light sources for quantum information tasks, thus opening up future applications in quantum technologies.

    Ladda ner fulltext (pdf)
    fulltext
  • 2.
    Bao, Chunxiong
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Elektroniska och fotoniska material. Linköpings universitet, Tekniska fakulteten. Nanjing Univ, Peoples R China.
    Gao, Feng
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Elektroniska och fotoniska material. Linköpings universitet, Tekniska fakulteten.
    Physics of defects in metal halide perovskites2022Ingår i: Reports on progress in physics (Print), ISSN 0034-4885, E-ISSN 1361-6633, Vol. 85, nr 9, artikel-id 096501Artikel, forskningsöversikt (Refereegranskat)
    Abstract [en]

    Metal halide perovskites are widely used in optoelectronic devices, including solar cells, photodetectors, and light-emitting diodes. Defects in this class of low-temperature solution-processed semiconductors play significant roles in the optoelectronic properties and performance of devices based on these semiconductors. Investigating the defect properties provides not only insight into the origin of the outstanding performance of perovskite optoelectronic devices but also guidance for further improvement of performance. Defects in perovskites have been intensely studied. Here, we review the progress in defect-related physics and techniques for perovskites. We survey the theoretical and computational results of the origin and properties of defects in perovskites. The underlying mechanisms, functions, advantages, and limitations of trap state characterization techniques are discussed. We introduce the effect of defects on the performance of perovskite optoelectronic devices, followed by a discussion of the mechanism of defect treatment. Finally, we summarize and present key challenges and opportunities of defects and their role in the further development of perovskite optoelectronic devices.

  • 3.
    Bao, Chunxiong
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Biomolekylär och Organisk Elektronik. Linköpings universitet, Tekniska fakulteten. Shenzhen Univ, Peoples R China.
    Xu, Weidong
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Biomolekylär och Organisk Elektronik. Linköpings universitet, Tekniska fakulteten. Nanjing Tech Univ NanjingTech, Peoples R China.
    Yang, Jie
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Biomolekylär och Organisk Elektronik. Linköpings universitet, Tekniska fakulteten. Shenzhen Univ, Peoples R China.
    Bai, Sai
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Biomolekylär och Organisk Elektronik. Linköpings universitet, Tekniska fakulteten.
    Teng, Pengpeng
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Biomolekylär och Organisk Elektronik. Linköpings universitet, Tekniska fakulteten. Nanjing Univ Aeronaut and Astronaut, Peoples R China.
    Yang, Ying
    Nanjing Univ Aeronaut and Astronaut, Peoples R China.
    Wang, Jianpu
    Nanjing Tech Univ NanjingTech, Peoples R China.
    Zhao, Ni
    Chinese Univ Hong Kong, Peoples R China.
    Zhang, Wenjing
    Shenzhen Univ, Peoples R China.
    Huang, Wei
    Nanjing Tech Univ NanjingTech, Peoples R China; NPU, Peoples R China.
    Gao, Feng
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Biomolekylär och Organisk Elektronik. Linköpings universitet, Tekniska fakulteten.
    Bidirectional optical signal transmission between two identical devices using perovskite diodes2020Ingår i: NATURE ELECTRONICS, ISSN 2520-1131, Vol. 3, nr 3, s. 156-164Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    A solution-processed perovskite diode that functions as both optical transmitter and receiver can be used to build a monolithic pulse sensor and a bidirectional optical communication system. The integration of optical signal generation and reception into one device-thus allowing a bidirectional optical signal transmission between two identical devices-is of value in the development of miniaturized and integrated optoelectronic devices. However, conventional solution-processable semiconductors have intrinsic material and design limitations that prevent them from being used to create such devices with a high performance. Here we report an efficient solution-processed perovskite diode that is capable of working in both emission and detection modes. The device can be switched between modes by changing the bias direction, and it exhibits light emission with an external quantum efficiency of over 21% and a light detection limit on a subpicowatt scale. The operation speed for both functions can reach tens of megahertz. Benefiting from the small Stokes shift of perovskites, our diodes exhibit a high specific detectivity (more than 2 x 10(12) Jones) at its peak emission (~804 nm), which allows an optical signal exchange between two identical diodes. To illustrate the potential of the dual-functional diode, we show that it can be used to create a monolithic pulse sensor and a bidirectional optical communication system.

    Ladda ner fulltext (pdf)
    fulltext
  • 4.
    Bao, Chunxiong
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Biomolekylär och Organisk Elektronik. Linköpings universitet, Tekniska fakulteten. Shenzhen Univ, Peoples R China.
    Yang, Jie
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Biomolekylär och Organisk Elektronik. Linköpings universitet, Tekniska fakulteten. Southeast Univ, Peoples R China.
    Bai, Sai
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Biomolekylär och Organisk Elektronik. Linköpings universitet, Tekniska fakulteten.
    Xu, Weidong
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Biomolekylär och Organisk Elektronik. Linköpings universitet, Tekniska fakulteten.
    Yan, Zhibo
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Biomolekylär och Organisk Elektronik. Linköpings universitet, Tekniska fakulteten. Nanjing Univ, Peoples R China.
    Xu, Qingyu
    Southeast Univ, Peoples R China.
    Liu, Junming
    Nanjing Univ, Peoples R China.
    Zhang, Wenjing
    Shenzhen Univ, Peoples R China.
    Gao, Feng
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Biomolekylär och Organisk Elektronik. Linköpings universitet, Tekniska fakulteten.
    High Performance and Stable All-Inorganic Metal Halide Perovskite-Based Photodetectors for Optical Communication Applications2018Ingår i: Advanced Materials, ISSN 0935-9648, E-ISSN 1521-4095, Vol. 30, nr 38, artikel-id 1803422Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Photodetectors are critical parts of an optical communication system for achieving efficient photoelectronic conversion of signals, and the response speed directly determines the bandwidth of the whole system. Metal halide perovskites, an emerging class of low-cost solution-processed semiconductors, exhibiting strong optical absorption, low trap states, and high carrier mobility, are widely investigated in photodetection applications. Herein, through optimizing the device engineering and film quality, high-performance photodetectors based on all-inorganic cesium lead halide perovskite (CsPbIxBr3-x), which simultaneously possess high sensitivity and fast response, are demonstrated. The optimized devices processed from CsPbIBr2 perovskite show a practically measured detectable limit of about 21.5 pW cm(-2) and a fast response time of 20 ns, which are both among the highest reported device performance of perovskite-based photodetectors. Moreover, the photodetectors exhibit outstanding long-term environmental stability, with negligible degradation of the photoresponse property after 2000 h under ambient conditions. In addition, the resulting perovskite photodetector is successfully integrated into an optical communication system and its applications as an optical signal receiver on transmitting text and audio signals is demonstrated. The results suggest that all-inorganic metal halide perovskite-based photodetectors have great application potential for optical communication.

    Ladda ner fulltext (pdf)
    fulltext
  • 5.
    Bao, Chunxiong
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Elektroniska och fotoniska material. Linköpings universitet, Tekniska fakulteten. Nanjing Univ, Peoples R China.
    Yuan, Zhongcheng
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Elektroniska och fotoniska material. Linköpings universitet, Tekniska fakulteten. Univ Oxford, England.
    Niu, Wenxiao
    Nanjing Univ, Peoples R China.
    Yang, Jie
    Nanjing Tech Univ, Peoples R China; Nanjing Tech Univ, Peoples R China.
    Wang, Zijian
    Nanjing Univ, Peoples R China.
    Yu, Tao
    Nanjing Univ, Peoples R China.
    Wang, Jianpu
    Nanjing Tech Univ, Peoples R China; Nanjing Tech Univ, Peoples R China; Changzhou Univ, Peoples R China; Changzhou Univ, Peoples R China.
    Gao, Feng
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Elektroniska och fotoniska material. Linköpings universitet, Tekniska fakulteten. Westlake Univ, Peoples R China; Westlake Univ, Peoples R China.
    A multifunctional display based on photo-responsive perovskite light-emitting diodes2024Ingår i: NATURE ELECTRONICS, ISSN 2520-1131Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Current display screens are typically only used for information display, but can have a range of different sensors integrated into them for functions such as touch control, ambient light sensing and fingerprint sensing. Photo-responsive light-emitting diodes (LEDs), which can display information and respond to light excitation, could be used to develop future ultra-thin and large screen-to-body ratio screens. However, photo-response is difficult to achieve with conventional display technologies. Here, we report a multifunctional display that uses photo-responsive metal halide perovskite LEDs as pixels. The perovskite LED display can be simultaneously used as a touch screen, ambient light sensor and image sensor (including for fingerprint drawing) without integrating any additional sensors. The light-to-electricity conversion efficiency of the pixels also allow the display to act as a photovoltaic device that can charge the equipment. Photo-responsive metal halide perovskite light-emitting diodes can be used to create a multifunctional display that can function as a touch screen, ambient light sensor and image sensor.

  • 6.
    Chen, Hongting
    et al.
    Huazhong Univ Sci and Technol, Peoples R China.
    Fan, Lianwei
    Huazhong Univ Sci and Technol, Peoples R China.
    Zhang, Rui
    Huazhong Univ Sci and Technol, Peoples R China.
    Bao, Chunxiong
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Biomolekylär och Organisk Elektronik. Linköpings universitet, Tekniska fakulteten.
    Zhao, Haifeng
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Biomolekylär och Organisk Elektronik. Linköpings universitet, Tekniska fakulteten.
    Xiang, Wei
    Huazhong Univ Sci and Technol, Peoples R China.
    Liu, Wei
    Huazhong Univ Sci and Technol, Peoples R China.
    Niu, Guangda
    Huazhong Univ Sci and Technol, Peoples R China.
    Guo, Runda
    Huazhong Univ Sci and Technol, Peoples R China.
    Zhang, Louwen
    Huazhong Univ Sci and Technol, Peoples R China.
    Wang, Lei
    Huazhong Univ Sci and Technol, Peoples R China.
    High-Efficiency Formamidinium Lead Bromide Perovskite Nanocrystal-Based Light-Emitting Diodes Fabricated via a Surface Defect Self-Passivation Strategy2020Ingår i: Advanced Optical Materials, ISSN 2162-7568, E-ISSN 2195-1071, Vol. 8, nr 6, artikel-id 1901390Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Formamidinium lead bromide (FAPbBr(3)) nanocrystals (NCs) demonstrate great potential in light-emitting diode (LED) applications due to their pure green emission and excellent stability. However, the abundant defects at the surface of the NCs act as charge trapping centers and significantly increase the trap-assisted nonradiative recombination channels, hampering the performance improvement of LEDs based on FAPbBr(3) NCs. Herein, a facile self-passivation strategy of the surface defects is developed by introducing excess formamidinium bromide (FABr) during the colloidal synthesis of NCs, leading to much improved photoluminescence quantum yield (PLQY) of the obtained NCs. In addition, enhanced charge transport property is measured in the assembled films owing to the simultaneously declined insulating ligands at the surface of NCs. The molar ratio of FABr and PbBr2 is rationally optimized during the synthesis of NCs and high-efficient green-emissive LEDs are fabricated with a champion current efficiency of 76.8 cd A(-1), corresponding to an external quantum efficiency of 17.1%, which is among the best-performing green LEDs based on perovskite NCs so far.

  • 7.
    Guo, Ruiqi
    et al.
    Univ Sci and Technol, Peoples R China.
    Bao, Chunxiong
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Biomolekylär och Organisk Elektronik. Linköpings universitet, Tekniska fakulteten.
    Gao, Feng
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Biomolekylär och Organisk Elektronik. Linköpings universitet, Tekniska fakulteten.
    Tian, Jianjun
    Univ Sci and Technol, Peoples R China.
    Double Active Layers Constructed with Halide Perovskite and Quantum Dots for Broadband Photodetection2020Ingår i: Advanced Optical Materials, ISSN 2162-7568, E-ISSN 2195-1071, Vol. 8, nr 17, artikel-id 2000557Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Herein, solution-processed, high-performance broadband (300-1100 nm) photodetectors based on double active layers incorporating narrow-bandgap CuInSe2 (CISe) quantum dots (QDs) and halide perovskite are devised. The CISe QDs/perovskite film as the photoactive layer boosts the photocurrent and suppresses dark current. Due to the joint light absorption effect of CISe QDs and halide perovskite, the photoelectric conversion capacity is improved. Furthermore, CISe QDs as an electron-blocking layer can effectively block electrons to the hole transport layer and reduce the thermal noise. The optimized photodetector exhibits responsivity over 150 mA W-1 in the visible and more than 20 mA W-1 in the near-infrared (800-1000 nm) ranges, specific detectivity of more than 7.0 x 10(12) Jones in the visible region and 7.7 x 10(11) Jones in the near-infrared region, a transient response time of 277 ns with the active area of 0.013 cm(2), and a linear dynamic range of approximate to 75 dB. Importantly, the CISe QDs layer makes the perovskite denser and more hydrophobic, thus improves the environmental and thermal stability of the detector, even extends the working temperature to exceeding 150 degrees C. The design concept and the considerable performance of this novel device provide a reference value for polychromatic light detection.

  • 8.
    Jiang, Jizhong
    et al.
    Jilin Univ, Peoples R China.
    Xiong, Min
    Nanchang Univ, Peoples R China.
    Fan, Ke
    Hong Kong Polytech Univ, Peoples R China.
    Bao, Chunxiong
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Elektroniska och fotoniska material. Linköpings universitet, Tekniska fakulteten.
    Xin, Deyu
    China Acad Engn Phys, Peoples R China.
    Pan, Zhengwei
    Nanchang Univ, Peoples R China.
    Fei, Linfeng
    Nanchang Univ, Peoples R China.
    Huang, Haitao
    Hong Kong Polytech Univ, Peoples R China.
    Zhou, Lang
    Nanchang Univ, Peoples R China.
    Yao, Kai
    Nanchang Univ, Peoples R China.
    Zheng, Xiaojia
    China Acad Engn Phys, Peoples R China.
    Shen, Liang
    Jilin Univ, Peoples R China.
    Gao, Feng
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Elektroniska och fotoniska material. Linköpings universitet, Tekniska fakulteten.
    Synergistic strain engineering of perovskite single crystals for highly stable and sensitive X-ray detectors with low-bias imaging and monitoring2022Ingår i: Nature Photonics, ISSN 1749-4885, E-ISSN 1749-4893, Vol. 16, nr 8, s. 575-581Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    X-ray detectors based on dual-site-doped perovskite single crystals exhibit excellent sensitivity of 2.6 x 10(4) mu C Gy(air)(-1) cm(-2) under a low field of 1 V cm(-1). The detectable dose rate is as low as 7.09 nGy(air) s(-1). The operational stability is beyond half a year. Although three-dimensional metal halide perovskite (ABX(3)) single crystals are promising next-generation materials for radiation detection, state-of-the-art perovskite X-ray detectors include methylammonium as A-site cations, limiting the operational stability. Previous efforts to improve the stability using formamidinium-caesium-alloyed A-site cations usually sacrifice the detection performance because of high trap densities. Here we successfully solve this trade-off between stability and detection performance by synergistic composition engineering, where we include A-site alloys to decrease the trap density and B-site dopants to release the microstrain induced by A-site alloying. As such, we develop high-performance perovskite X-ray detectors with excellent stability. Our X-ray detectors exhibit high sensitivity of (2.6 +/- 0.1) x 10(4) mu C Gy(air)(-1) cm(-2) under 1 V cm(-1) and ultralow limit of detection of 7.09 nGy(air) s(-1). In addition, they feature long-term operational stability over half a year and impressive thermal stability up to 125 degrees C. We further demonstrate the promise of our perovskite X-ray detectors for low-bias portable applications with high-quality X-ray imaging and monitoring prototypes.

    Ladda ner fulltext (pdf)
    fulltext
  • 9.
    Karlsson, Max
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Elektroniska och fotoniska material. Linköpings universitet, Tekniska fakulteten.
    Yi, Ziyue
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Biomolekylär och Organisk Elektronik. Linköpings universitet, Tekniska fakulteten. Univ Cambridge, England.
    Reichert, Sebastian
    Tech Univ Chemnitz, Germany.
    Luo, Xiyu
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Elektroniska och fotoniska material. Linköpings universitet, Tekniska fakulteten. Tsinghua Univ Beijing, Peoples R China.
    Lin, Weihua
    Lund Univ, Sweden.
    Zhang, Zeyu
    Beijing Univ Technol, Peoples R China.
    Bao, Chunxiong
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Elektroniska och fotoniska material. Linköpings universitet, Tekniska fakulteten.
    Zhang, Rui
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Elektroniska och fotoniska material. Linköpings universitet, Tekniska fakulteten.
    Bai, Sai
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Elektroniska och fotoniska material. Linköpings universitet, Tekniska fakulteten.
    Zheng, Guanhaojie
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Biomolekylär och Organisk Elektronik. Linköpings universitet, Tekniska fakulteten.
    Teng, Pengpeng
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Biomolekylär och Organisk Elektronik. Linköpings universitet, Tekniska fakulteten.
    Duan, Lian
    Tsinghua Univ Beijing, Peoples R China.
    Lu, Yue
    Beijing Univ Technol, Peoples R China.
    Zheng, Kaibo
    Lund Univ, Sweden; Tech Univ Denmark, Denmark.
    Pullerits, Tonu
    Lund Univ, Sweden.
    Deibel, Carsten
    Tech Univ Chemnitz, Germany.
    Xu, Weidong
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Elektroniska och fotoniska material. Linköpings universitet, Tekniska fakulteten.
    Friend, Richard
    Univ Cambridge, England.
    Gao, Feng
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Elektroniska och fotoniska material. Linköpings universitet, Tekniska fakulteten.
    Mixed halide perovskites for spectrally stable and high-efficiency blue light-emitting diodes2021Ingår i: Nature Communications, E-ISSN 2041-1723, Vol. 12, nr 1, artikel-id 361Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Bright and efficient blue emission is key to further development of metal halide perovskite light-emitting diodes. Although modifying bromide/chloride composition is straightforward to achieve blue emission, practical implementation of this strategy has been challenging due to poor colour stability and severe photoluminescence quenching. Both detrimental effects become increasingly prominent in perovskites with the high chloride content needed to produce blue emission. Here, we solve these critical challenges in mixed halide perovskites and demonstrate spectrally stable blue perovskite light-emitting diodes over a wide range of emission wavelengths from 490 to 451 nanometres. The emission colour is directly tuned by modifying the halide composition. Particularly, our blue and deep-blue light-emitting diodes based on three-dimensional perovskites show high EQE values of 11.0% and 5.5% with emission peaks at 477 and 467nm, respectively. These achievements are enabled by a vapour-assisted crystallization technique, which largely mitigates local compositional heterogeneity and ion migration. Achieving bright and efficient blue emission in metal halide perovskite light-emitting diodes has proven to be challenging. Here, the authors demonstrate high EQE and spectrally stable blue light-emitting diodes based on mixed halide perovskites, with emission from 490 to 451nm by using a vapour-assisted crystallization technique.

    Ladda ner fulltext (pdf)
    fulltext
  • 10.
    Teng, Pengpeng
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Elektroniska och fotoniska material. Linköpings universitet, Tekniska fakulteten. Nanjing Univ Aeronaut & Astronaut, Peoples R China; Nanjing Univ Aeronaut & Astronaut, Sweden.
    Reichert, Sebastian
    Tech Univ Chemnitz, Germany.
    Xu, Weidong
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Elektroniska och fotoniska material. Linköpings universitet, Tekniska fakulteten.
    Yang, Shih-Chi
    Swiss Fed Labs Mat Sci & Technol, Switzerland.
    Fu, Fan
    Swiss Fed Labs Mat Sci & Technol, Switzerland.
    Zou, Yatao
    Soochow Univ, Peoples R China.
    Yin, Chunyang
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Elektroniska och fotoniska material. Linköpings universitet, Tekniska fakulteten.
    Bao, Chunxiong
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Elektroniska och fotoniska material. Linköpings universitet, Tekniska fakulteten.
    Karlsson, Max
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Elektroniska och fotoniska material. Linköpings universitet, Tekniska fakulteten.
    Liu, Xianjie
    Norrkoping Univ, Sweden.
    Qin, Jiajun
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Elektroniska och fotoniska material. Linköpings universitet, Tekniska fakulteten.
    Yu, Tao
    Nanjing Univ, Peoples R China.
    Tress, Wolfgang
    Zurich Univ Appl Sci, Switzerland.
    Yang, Ying
    Nanjing Univ Aeronaut & Astronaut, Peoples R China; Nanjing Univ Aeronaut & Astronaut, Sweden.
    Sun, Baoquan
    Soochow Univ, Peoples R China.
    Deibel, Carsten
    Tech Univ Chemnitz, Germany.
    Gao, Feng
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Elektroniska och fotoniska material. Linköpings universitet, Tekniska fakulteten.
    Degradation and self-repairing in perovskite light-emitting diodes2021Ingår i: Matter, ISSN 2590-2393, E-ISSN 2590-2385, Vol. 4, nr 11, s. 3710-3724Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    One of the most critical challenges in perovskite light-emitting diodes (PeLEDs) lies in poor operational stability. Although field dependent ion migration is believed to play an important role in the operation of perovskite optoelectronic devices, a complete understanding of how it affects the stability of PeLEDs is still missing. Here, we report a unique self-repairing behavior that the electroluminescence of moderately degraded PeLEDs can almost completely restore to their initial performance after resting. We find that the accumulated halides within the hole transport layer undergo back diffusion toward the surface of the perovskite layer during resting, repairing the vacancies and thus resulting in electroluminescence recovery. These findings indicate that one of the dominant degradation pathways in PeLEDs is the generation of halide vacancies at perovskite/hole transport layer interface during operation. We thus further passivate this key interface, which results in a high external quantum efficiency of 22.8% and obviously improved operational stability.

    Ladda ner fulltext (pdf)
    fulltext
  • 11.
    Tu, Yudi
    et al.
    Shenzhen Univ, Peoples R China.
    Xu, Yan
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Biomolekylär och Organisk Elektronik. Linköpings universitet, Tekniska fakulteten. Shenzhen Univ, Peoples R China.
    Li, Junzi
    Shenzhen Univ, Peoples R China.
    Hao, Qiaoyan
    Shenzhen Univ, Peoples R China.
    Liu, Xiaosong
    Shenzhen Univ, Peoples R China.
    Qi, Dianyu
    Shenzhen Univ, Peoples R China.
    Bao, Chunxiong
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Elektroniska och fotoniska material. Linköpings universitet, Tekniska fakulteten. Shenzhen Univ, Peoples R China.
    He, Tingchao
    Shenzhen Univ, Peoples R China.
    Gao, Feng
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Elektroniska och fotoniska material. Linköpings universitet, Tekniska fakulteten.
    Zhang, Wenjing
    Shenzhen Univ, Peoples R China.
    Ultrathin Single-Crystalline 2D Perovskite Photoconductor for High-Performance Narrowband and Wide Linear Dynamic Range PhotodetectionIngår i: Small, ISSN 1613-6810, E-ISSN 1613-6829, artikel-id 2005626Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    For next-generation Internet-of-Everything applications, for example, artificial-neural-network image sensors, artificial retina, visible light communication, on-chip light interconnection, and flexible devices, etc., high-performance microscale photodetectors are in urgent demands. 2D material (2DM) photodetectors have been researched and demonstrated impressive performances. However, they have not met the demands in filterless narrowband photoresponse, wide linear dynamic range (LDR), ultralow dark current, and large on/off ratio, which are key performances for these applications. 2D Ruddlesden-Popper perovskites (2D-RPPs) are recently highlighted photovoltaic and optoelectronic materials. Embedding ultrathin 2D-RPPs into 2DM photodetectors holds potentials to improve these performances. Herein, a single-crystalline ultrathin (PEA)(2)PbI4 is integrated into a vertical-stacked graphene-(PEA)(2)PbI4-graphene micro photoconductor (V-PEPI-PC). V-PEPI-PC exhibits narrowband photoresponses at 517 nm with a full-width-at-half-maximum of 15 nm and a wide LDR of 122 dB. Due to the multiple quantum wells in (PEA)(2)PbI4, V-PEPI-PC demonstrates an ultralow dark current of 1.1 x 10(-14) A (44 pA mm(-2)), a high specific detectivity of 1.2 x 10(13) Jones, and a high on/off ratio of 1.6 x 10(6). Owing to the short vertical channel, V-PEPI-PC shows a fast response rise time of 486 mu s. Therefore, the vertical-stacked photodetectors based on hybrid 2D-RPPs and 2DMs may have great potentials in future optoelectronics.

  • 12.
    Wang, Heyong
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Biomolekylär och Organisk Elektronik. Linköpings universitet, Tekniska fakulteten.
    Kosasih, Felix Utama
    Univ Cambridge, England.
    Yu, Hongling
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Biomolekylär och Organisk Elektronik. Linköpings universitet, Tekniska fakulteten.
    Zheng, Guanhaojie
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Biomolekylär och Organisk Elektronik. Linköpings universitet, Tekniska fakulteten.
    Zhang, Jiangbin
    Univ Cambridge, England.
    Pozina, Galia
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Liu, Yang
    Zhejiang Univ, Peoples R China.
    Bao, Chunxiong
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Biomolekylär och Organisk Elektronik. Linköpings universitet, Tekniska fakulteten.
    Hu, Zhang-Jun
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Molekylär ytfysik och nanovetenskap. Linköpings universitet, Tekniska fakulteten.
    Liu, Xianjie
    Linköpings universitet, Institutionen för teknik och naturvetenskap, Laboratoriet för organisk elektronik. Linköpings universitet, Tekniska fakulteten.
    Kobera, Libor
    Czech Acad Sci, Czech Republic.
    Abbrent, Sabina
    Czech Acad Sci, Czech Republic.
    Brus, Jiri
    Czech Acad Sci, Czech Republic.
    Jin, Yizheng
    Zhejiang Univ, Peoples R China.
    Fahlman, Mats
    Linköpings universitet, Institutionen för teknik och naturvetenskap, Laboratoriet för organisk elektronik. Linköpings universitet, Tekniska fakulteten.
    Friend, Richard H.
    Univ Cambridge, England.
    Ducati, Caterina
    Univ Cambridge, England.
    Liu, Xiaoke
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Biomolekylär och Organisk Elektronik. Linköpings universitet, Tekniska fakulteten.
    Gao, Feng
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Biomolekylär och Organisk Elektronik. Linköpings universitet, Tekniska fakulteten.
    Perovskite-molecule composite thin films for efficient and stable light-emitting diodes2020Ingår i: Nature Communications, E-ISSN 2041-1723, Vol. 11, nr 1, artikel-id 891Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Although perovskite light-emitting diodes (PeLEDs) have recently experienced significant progress, there are only scattered reports of PeLEDs with both high efficiency and long operational stability, calling for additional strategies to address this challenge. Here, we develop perovskite-molecule composite thin films for efficient and stable PeLEDs. The perovskite-molecule composite thin films consist of in-situ formed high-quality perovskite nanocrystals embedded in the electron-transport molecular matrix, which controls nucleation process of perovskites, leading to PeLEDs with a peak external quantum efficiency of 17.3% and half-lifetime of approximately 100 h. In addition, we find that the device degradation mechanism at high driving voltages is different from that at low driving voltages. This work provides an effective strategy and deep understanding for achieving efficient and stable PeLEDs from both material and device perspectives.

    Ladda ner fulltext (pdf)
    fulltext
  • 13.
    Xie, Haibing
    et al.
    Catalan Inst Nanosci & Nanotechnol ICN2, Spain; Barcelona Inst Sci & Technol BIST, Spain.
    Wang, Zaiwei
    Ecole Polytech Fed Lausanne, Switzerland.
    Chen, Zehua
    Eindhoven Univ Technol, Netherlands; Eindhoven Univ Technol, Netherlands.
    Pereyra, Carlos
    Catalan Inst Nanosci & Nanotechnol ICN2, Spain; Barcelona Inst Sci & Technol BIST, Spain.
    Pols, Mike
    Eindhoven Univ Technol, Netherlands; Eindhoven Univ Technol, Netherlands.
    Galkowski, Krzysztof
    Univ Cambridge, England; Nicolaus Copernicus Univ, Poland.
    Anaya, Miguel
    Univ Cambridge, England.
    Fu, Shuai
    Max Planck Inst Polymer Res, Germany.
    Jia, Xiaoyu
    Max Planck Inst Polymer Res, Germany.
    Tang, Pengyi
    Catalan Inst Nanosci & Nanotechnol ICN2, Spain; Barcelona Inst Sci & Technol BIST, Spain.
    Kubicki, Dominik Jozef
    Univ Cambridge, England; Ecole Polytech Fed Lausanne, Switzerland; Ecole Polytech Fed Lausanne, Switzerland.
    Agarwalla, Anand
    Ecole Polytech Fed Lausanne, Switzerland.
    Kim, Hui-Seon
    Ecole Polytech Fed Lausanne, Switzerland; Inha Univ, South Korea.
    Prochowicz, Daniel
    Ecole Polytech Fed Lausanne, Switzerland; Polish Acad Sci, Poland.
    Borrise, Xavier
    Univ Autonoma Barcelona UAB, Spain.
    Bonn, Mischa
    Max Planck Inst Polymer Res, Germany.
    Bao, Chunxiong
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Elektroniska och fotoniska material. Linköpings universitet, Tekniska fakulteten.
    Sun, Xiaoxiao
    Empa Swiss Fed Labs Mat Sci & Technol, Switzerland.
    Zakeeruddin, Shaik Mohammed
    Ecole Polytech Fed Lausanne, Switzerland.
    Emsley, Lyndon
    Ecole Polytech Fed Lausanne, Switzerland.
    Arbiol, Jordi
    Catalan Inst Nanosci & Nanotechnol ICN2, Spain; Barcelona Inst Sci & Technol BIST, Spain; ICREA, Spain.
    Gao, Feng
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Elektroniska och fotoniska material. Linköpings universitet, Tekniska fakulteten.
    Fu, Fan
    Empa Swiss Fed Labs Mat Sci & Technol, Switzerland.
    Wang, Hai I
    Max Planck Inst Polymer Res, Germany.
    Tielrooij, Klaas-Jan
    Catalan Inst Nanosci & Nanotechnol ICN2, Spain; Barcelona Inst Sci & Technol BIST, Spain.
    Stranks, Samuel D.
    Univ Cambridge, England; Univ Cambridge, England.
    Tao, Shuxia
    Eindhoven Univ Technol, Netherlands; Eindhoven Univ Technol, Netherlands.
    Graetzel, Michael
    Ecole Polytech Fed Lausanne, Switzerland.
    Hagfeldt, Anders
    Ecole Polytech Fed Lausanne, Switzerland; Uppsala Univ, Sweden.
    Lira-Cantu, Monica
    Catalan Inst Nanosci & Nanotechnol ICN2, Spain; Barcelona Inst Sci & Technol BIST, Spain; Ecole Polytech Fed Lausanne, Switzerland.
    Decoupling the effects of defects on efficiency and stability through phosphonates in stable halide perovskite solar cells2021Ingår i: Joule, E-ISSN 2542-4351, Vol. 5, nr 5, s. 1246-1266Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Understanding defects is of paramount importance for the development of stable halide perovskite solar cells (PSCs). However, isolating their distinctive effects on device efficiency and stability is currently a challenge. We report that adding the organic molecule 3-phosphonopropionic acid (H3pp) to the halide perovskite results in unchanged overall optoelectronic performance while having a tremendous effect on device stability. We obtained PSCs with similar to 21% efficiency that retain similar to 100% of the initial efficiency after 1,000 h at the maximum power point under simulated AM1.5G illumination. The strong interaction between the perovskite and the H3pp molecule through two types of hydrogen bonds (H center dot center dot center dot I and O center dot center dot center dot H) leads to shallow point defect passivation that has a significant effect on device stability but not on the non-radiative recombination and device efficiency. We expect that our work will have important implications for the current understanding and advancement of operational PSCs.

  • 14.
    Xu, Weidong
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Biomolekylär och Organisk Elektronik. Linköpings universitet, Tekniska fakulteten. Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing, China.
    Hu, Qi
    Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing, China.
    Bai, Sai
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Biomolekylär och Organisk Elektronik. Linköpings universitet, Tekniska fakulteten.
    Bao, Chunxiong
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Biomolekylär och Organisk Elektronik. Linköpings universitet, Tekniska fakulteten. International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Shenzhen University, Shenzhen, China.
    Miao, Yanfeng
    Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing, China.
    Yuan, Zhongcheng
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Biomolekylär och Organisk Elektronik. Linköpings universitet, Tekniska fakulteten.
    Borzda, Tetiana
    Center for Nano Science and Technology @Polimi, Istituto Italiano di Tecnologia, Milan, Italy.
    Barker, Alex J.
    Center for Nano Science and Technology @Polimi, Istituto Italiano di Tecnologia, Milan, Italy.
    Tyukalova, Elizaveta
    School of Materials Science and Engineering, Nanyang Technological University (NTU), Singapore, Singapore.
    Hu, Zhang-Jun
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Molekylär ytfysik och nanovetenskap. Linköpings universitet, Tekniska fakulteten.
    Kawecki, Maciej
    Laboratory for Nanoscale Materials Science, Empa, Dubendorf, Switzerland; Department of Physics, University of Basel, Basel, Switzerland.
    Wang, Heyong
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Biomolekylär och Organisk Elektronik. Linköpings universitet, Tekniska fakulteten.
    Yan, Zhibo
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Biomolekylär och Organisk Elektronik. Linköpings universitet, Tekniska fakulteten. Laboratory of Solid State Microstructures and Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, P. R. China.
    Liu, Xianjie
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Ytors Fysik och Kemi. Linköpings universitet, Tekniska fakulteten.
    Shi, Xiaobo
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Biomolekylär och Organisk Elektronik. Linköpings universitet, Tekniska fakulteten.
    Uvdal, Kajsa
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Molekylär ytfysik och nanovetenskap. Linköpings universitet, Tekniska fakulteten.
    Fahlman, Mats
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Ytors Fysik och Kemi. Linköpings universitet, Tekniska fakulteten.
    Zhang, Wenjing
    International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Shenzhen University, Shenzhen, China.
    Duchamp, Martial
    School of Materials Science and Engineering, Nanyang Technological University (NTU), Singapore, Singapore.
    Liu, Jun-Ming
    Laboratory of Solid State Microstructures and Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, P. R. China.
    Petrozza, Annamaria
    Center for Nano Science and Technology @Polimi, Istituto Italiano di Tecnologia, Milan, Italy.
    Wang, Jianpu
    Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing, China.
    Liu, Li-Min
    Beijing Computational Science Research Center, Beijing, China; School of Physics, Beihang University, Beijing, China.
    Huang, Wei
    Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing, China; Shaanxi Institute of Flexible Electronics (SIFE), Northwestern Polytechnical University (NPU), Xi’an, China.
    Gao, Feng
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Biomolekylär och Organisk Elektronik. Linköpings universitet, Tekniska fakulteten.
    Rational molecular passivation for high-performance perovskite light-emitting diodes2019Ingår i: Nature Photonics, ISSN 1749-4885, E-ISSN 1749-4893, Vol. 13, nr 6, s. 418-424Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    A major efficiency limit for solution-processed perovskite optoelectronic devices, for example light-emitting diodes, is trap-mediated non-radiative losses. Defect passivation using organic molecules has been identified as an attractive approach to tackle this issue. However, implementation of this approach has been hindered by a lack of deep understanding of how the molecular structures influence the effectiveness of passivation. We show that the so far largely ignored hydrogen bonds play a critical role in affecting the passivation. By weakening the hydrogen bonding between the passivating functional moieties and the organic cation featuring in the perovskite, we significantly enhance the interaction with defect sites and minimize non-radiative recombination losses. Consequently, we achieve exceptionally high-performance near-infrared perovskite light-emitting diodes with a record external quantum efficiency of 21.6%. In addition, our passivated perovskite light-emitting diodes maintain a high external quantum efficiency of 20.1% and a wall-plug efficiency of 11.0% at a high current density of 200 mA cm−2, making them more attractive than the most efficient organic and quantum-dot light-emitting diodes at high excitations.

    Ladda ner fulltext (pdf)
    fulltext
  • 15.
    Yan, Zhibo
    et al.
    Nanjing Univ, Peoples R China.
    Zhai, Wenjing
    Nanjing Univ, Peoples R China.
    Wang, Feng
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Elektroniska och fotoniska material. Linköpings universitet, Tekniska fakulteten.
    Li, Qian
    Nanjing Univ, Peoples R China.
    Lin, Lin
    Nanjing Univ, Peoples R China.
    Bao, Chunxiong
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Elektroniska och fotoniska material. Linköpings universitet, Tekniska fakulteten.
    Zhang, Chunfeng
    Nanjing Univ, Peoples R China.
    Gao, Feng
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Elektroniska och fotoniska material. Linköpings universitet, Tekniska fakulteten.
    Liu, J-M
    Nanjing Univ, Peoples R China; South China Normal Univ, Peoples R China; South China Normal Univ, Peoples R China.
    Reversible Ionic Polarization in Metal Halide Perovskites2021Ingår i: The Journal of Physical Chemistry C, ISSN 1932-7447, E-ISSN 1932-7455, Vol. 125, nr 1, s. 283-289Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Metal halide perovskites have emerged as promising photovoltaic materials with attractive photoelectronic properties. However, the fundamental mechanisms for their outstanding properties are still elusive. In this work, we reveal the reversible bulk ionic polarization property of perovskites through studying the photoelectric response on the controllable states by electrical poling from room temperature to low temperature (200 K). The overall increase in light absorption, photoconductance, and carrier recombination lifetime demonstrates that the bulk ionic polarization contributes to the excellent photoelectric properties of halide perovskites. Moreover, we also discuss the role of ionic polarization in the overshoot transient photocurrent relaxation phenomenon after the electrical poling. This work would promote deep understanding in the unique properties of perovskites and their excellent photovoltaic performance.

  • 16.
    Yang, Jie
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Biomolekylär och Organisk Elektronik. Linköpings universitet, Tekniska fakulteten. Shenzhen Univ, Peoples R China.
    Bao, Chunxiong
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Biomolekylär och Organisk Elektronik. Linköpings universitet, Tekniska fakulteten. Shenzhen Univ, Peoples R China.
    Ning, Weihua
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Biomolekylär och Organisk Elektronik. Linköpings universitet, Tekniska fakulteten. Nanjing Tech Univ, Peoples R China.
    Wu, Bo
    Nanyang Technol Univ, Singapore.
    Ji, Fuxiang
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Biomolekylär och Organisk Elektronik. Linköpings universitet, Tekniska fakulteten.
    Yan, Zhibo
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Biomolekylär och Organisk Elektronik. Linköpings universitet, Tekniska fakulteten. Nanjing Univ, Peoples R China.
    Tao, Youtian
    Nanjing Tech Univ, Peoples R China.
    Liu, Jun-Ming
    Nanjing Univ, Peoples R China.
    Sum, Tze Chien
    Nanyang Technol Univ, Singapore.
    Bai, Sai
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Biomolekylär och Organisk Elektronik. Linköpings universitet, Tekniska fakulteten.
    Wang, Jianpu
    Nanjing Tech Univ, Peoples R China.
    Huang, Wei
    Nanjing Tech Univ, Peoples R China.
    Zhang, Wenjing
    Shenzhen Univ, Peoples R China.
    Gao, Feng
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Biomolekylär och Organisk Elektronik. Linköpings universitet, Tekniska fakulteten.
    Stable, High-Sensitivity and Fast-Response Photodetectors Based on Lead-Free Cs2AgBiBr6 Double Perovskite Films2019Ingår i: Advanced Optical Materials, ISSN 2162-7568, E-ISSN 2195-1071, Vol. 7, nr 13, artikel-id 1801732Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Solution-processed metal halide perovskites (MHPs) have demonstrated great advances on achieving high-performance photodetectors. However, the intrinsic material instability and the toxicity of lead still hinder the practical applications of MHPs-based photodetectors. In this work, the first highly sensitive and fast-response lead-free perovskite photodetectors based on Cs2AgBiBr6 double perovskite films are demonstrated. A convenient solution method is developed to deposit high-quality Cs2AgBiBr6 film with large grain sizes, low trap densities, and long charge carrier lifetimes. Incorporated within a photodiode device architecture comprised of optimized hole- and electron-transporting layers, lead-free perovskite photodetectors are achieved exhibiting a high detectivity of 3.29 x 10(12) Jones, a large linear dynamic range of 193 dB, and a fast response time of approximate to 17 ns. All the key figures of merit of the devices are comparable with the reported best-performing photodetectors based on lead halide perovskites. In addition, the resulting devices exhibit excellent thermal and environmental stability. The nonencapsulated devices show negligible degradation after thermal stressing at 150 degrees C and less than 5% degradation in the photoresponsivity after storage in ambient air for approximate to 2300 h. The results demonstrate the great potential of the lead-free Cs2AgBiBr6 double perovskite in applications for environmentally friendly and high-performance photodetectors.

    Ladda ner fulltext (pdf)
    fulltext
  • 17.
    Zheng, Xiaopeng
    et al.
    KAUST, Saudi Arabia.
    Hou, Yi
    Univ Toronto, Canada.
    Bao, Chunxiong
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Biomolekylär och Organisk Elektronik. Linköpings universitet, Tekniska fakulteten.
    Yin, Jun
    KAUST, Saudi Arabia.
    Yuan, Fanglong
    Univ Toronto, Canada.
    Huang, Ziru
    University of Toronto, Toronto, Ontario, Canada.
    Song, Kepeng
    KAUST, Saudi Arabia.
    Liu, Jiakai
    KAUST, Saudi Arabia.
    Troughton, Joel
    KAUST, Saudi Arabia.
    Gasparini, Nicola
    KAUST, Saudi Arabia.
    Zhou, Chun
    Univ Toronto, Canada.
    Lin, Yuanbao
    KAUST, Saudi Arabia.
    Xue, Ding-Jiang
    Univ Toronto, Canada.
    Chen, Bin
    Univ Toronto, Canada.
    Johnston, Andrew K.
    Univ Toronto, Canada.
    Wei, Nini
    KAUST, Saudi Arabia.
    Hedhili, Mohamed Nejib
    KAUST, Saudi Arabia.
    Wei, Mingyang
    Univ Toronto, Canada.
    Alsalloum, Abdullah Y.
    KAUST, Saudi Arabia.
    Maity, Partha
    KAUST, Saudi Arabia.
    Turedi, Bekir
    KAUST, Saudi Arabia.
    Yang, Chen
    KAUST, Saudi Arabia.
    Baran, Derya
    KAUST, Saudi Arabia.
    Anthopoulos, Thomas D.
    KAUST, Saudi Arabia.
    Han, Yu
    KAUST, Saudi Arabia.
    Lu, Zheng-Hong
    Univ Toronto, Canada.
    Mohammed, Omar F.
    KAUST, Saudi Arabia.
    Gao, Feng
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Biomolekylär och Organisk Elektronik. Linköpings universitet, Tekniska fakulteten.
    Sargent, Edward H.
    Univ Toronto, Canada.
    Bakr, Osman M.
    KAUST, Saudi Arabia.
    Managing grains and interfaces via ligand anchoring enables 22.3%-efficiency inverted perovskite solar cells2020Ingår i: NATURE ENERGY, ISSN 2058-7546, Vol. 5, s. 131-140Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Inverted perovskite solar cells have attracted increasing attention because they have achieved long operating lifetimes. However, they have exhibited significantly inferior power conversion efficiencies compared to regular perovskite solar cells. Here we reduce this efficiency gap using a trace amount of surface-anchoring alkylamine ligands (AALs) with different chain lengths as grain and interface modifiers. We show that long-chain AALs added to the precursor solution suppress nonradiative carrier recombination and improve the optoelectronic properties of mixed-cation mixed-halide perovskite films. The resulting AAL surface-modified films exhibit a prominent (100) orientation and lower trap-state density as well as enhanced carrier mobilities and diffusion lengths. These translate into a certified stabilized power conversion efficiency of 22.3% (23.0% power conversion efficiency for lab-measured champion devices). The devices operate for over 1,000 h at the maximum power point under simulated AM1.5 illumination, without loss of efficiency. While perovskite solar cells with an inverted architecture hold great promise for operation stability, their power conversion efficiency lags behind that of conventional cells. Here, Zheng et al. achieve a certified 22.34% efficiency, exploiting alkylamine ligands as grain and interface modifiers.

1 - 17 av 17
RefereraExporteraLänk till träfflistan
Permanent länk
Referera
Referensformat
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Annat format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annat språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf