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  • 1.
    Askari, Sadegh
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Plasma and Coating Physics. Linköping University, Faculty of Science & Engineering. Christian Albrechts Univ Kiel, Germany.
    Machhadani, Houssaine
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
    Benedikt, J.
    Christian Albrechts Univ Kiel, Germany.
    Helmersson, Ulf
    Linköping University, Department of Physics, Chemistry and Biology, Plasma and Coating Physics. Linköping University, Faculty of Science & Engineering.
    Plasma-based processes for planar and 3D surface patterning of functional nanoparticles2019In: Journal of nanoparticle research, ISSN 1388-0764, E-ISSN 1572-896X, Vol. 21, no 11, article id 223Article in journal (Refereed)
    Abstract [en]

    We present a gas-phase process for surface patterning and 3D self-assembly of nanoparticles (NPs) of functional materials such as metals, oxides, and nitrides. The method relies on electrostatic assembly of free-flying NPs with unipolar charge produced in plasma sources. We demonstrate the capability of the process in self-assembly of NPs, with the size in the range 10-60 nm, into arrays of free-standing 3D microstructures with complex morphologies. Considering that the plasma nanoparticle sources are compatible with synthesis of a large library of material NPs, the process introduces a novel approach for 3D printing of various functional NPs, high-precision device integration of NPs on sub-micrometer scales, and large-area parallel surface patterning of NPs.

  • 2.
    Chalangar, Ebrahim
    et al.
    Linköping University, Department of Science and Technology, Physics and Electronics. Linköping University, Faculty of Science & Engineering. Halmstad Univ, Sweden.
    Machhadani, Houssaine
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
    Lim, Seung-Hyuk
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
    Karlsson, Fredrik
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
    Nur, Omer
    Linköping University, Department of Science and Technology, Physics and Electronics. Linköping University, Faculty of Science & Engineering.
    Willander, Magnus
    Linköping University, Department of Science and Technology, Physics and Electronics. Linköping University, Faculty of Science & Engineering.
    Pettersson, Håkan
    Linköping University, Department of Science and Technology, Physics and Electronics. Linköping University, Faculty of Science & Engineering. Halmstad Univ, Sweden; Lund Univ, Sweden; Lund Univ, Sweden.
    Influence of morphology on electrical and optical properties of graphene/Al-doped ZnO-nanorod composites2018In: Nanotechnology, ISSN 0957-4484, E-ISSN 1361-6528, Vol. 29, no 41, article id 415201Article in journal (Refereed)
    Abstract [en]

    The development of future 3D-printed electronics relies on the access to highly conductive inexpensive materials that are printable at low temperatures (amp;lt;100 degrees C). The implementation of available materials for these applications are, however, still limited by issues related to cost and printing quality. Here, we report on the simple hydrothermal growth of novel nanocomposites that are well suited for conductive printing applications. The nanocomposites comprise highly Al-doped ZnO nanorods grown on graphene nanoplatelets (GNPs). The ZnO nanorods play the two major roles of (i) preventing GNPs from agglomerating and (ii) promoting electrical conduction paths between the graphene platelets. The effect of two different ZnO-nanorod morphologies with varying Al-doping concentration on the nanocomposite conductivity and the graphene dispersity are investigated. Time-dependent absorption, photoluminescence and photoconductivity measurements show that growth in high pH solutions promotes a better graphene dispersity, higher doping levels and enhanced bonding between the graphene and the ZnO nanorods. Growth in low pH solutions yields samples characterized by a higher conductivity and a reduced number of surface defects. These samples also exhibit a large persistent photoconductivity attributed to an effective charge separation and transfer from the nanorods to the graphene platelets. Our findings can be used to tailor the conductivity of novel printable composites, or for fabrication of large volumes of inexpensive porous conjugated graphene-semiconductor composites.

  • 3.
    Jemsson, Tomas
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Machhadani, Houssaine
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Holtz, Per-Olof
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Karlsson, Fredrik K
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Polarized single photon emission and photon bunching from an InGaN quantum dot on a GaN micropyramid2015In: Nanotechnology, ISSN 0957-4484, E-ISSN 1361-6528, Vol. 26, no 6, p. 065702-Article in journal (Refereed)
    Abstract [en]

    We report on excitonic single photon emission and biexcitonic photon bunching from an InGaN quantum dot formed on the apex of a hexagonal GaN micropyramid. An approach to suppress uncorrelated emission from the pyramid base is proposed, a metal lm is demonstrated to eectively screen background emission and thereby signicantly enhance the signal-to-background ratio of the quantum dot emission. As a result, the second order coherence function at zero time delay g(2)(0) is signicantly reduced (to g(2)(0) = 0.24, raw value) for the excitonic autocorrelation at a temperature of 12 K under continuous wave excitation, and a dominating single photon emission is demonstrated to survive up to 50 K. The deterioration of the g(2)(0)-value at elevated temperatures is well understood as the combined eect of reduced signal-to-background ratio and limited time resolution of the setup. This result underlines the great potential of site controlled pyramidal dots as sources of fast polarized single photons.

  • 4.
    Jemsson, Tomas
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Machhadani, Houssaine
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Karlsson, Fredrik K
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Hsu, Chih-Wei
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Holtz, Per-Olof
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Linearly polarized single photon antibunching from a site-controlled InGaN quantum dot2014In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 105, no 8, p. 081901-1-081901-4Article in journal (Refereed)
    Abstract [en]

    We report on the observation of linearly polarized single photon antibunching in the excitonic emission from a site-controlled InGaN quantum dot. The measured second order coherence function exhibits a significant dip at zero time difference, corresponding to g(m)(2) (0) = 0: 90 under continuous laser excitation. This relatively high value of g(m)(2) (0) is well understood by a model as the combination of short exciton life time (320 ps), limited experimental timing resolution and the presence of an uncorrelated broadband background emission from the sample. Our result provides the first rigorous evidence of InGaN quantum dot formation on hexagonal GaN pyramids, and it highlights a great potential in these dots as fast polarized single photon emitters if the background emission can be eliminated.

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