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  • 1.
    Luszczynska, B.
    et al.
    Lodz Univ Technol, Poland.
    Akkuratov, A. V
    Russian Acad Sci, Russia.
    Szymanski, Marek
    Linköping University, Department of Physics, Chemistry and Biology, Surface Physics and Chemistry. Linköping University, Faculty of Science & Engineering.
    Susarova, D. K.
    Russian Acad Sci, Russia.
    Dupont, B. G. R.
    Lodz Univ Technol, Poland.
    Babenko, S. D.
    Russian Acad Sci, Russia.
    Inasaridze, L. N.
    Russian Acad Sci, Russia.
    Bujak, P.
    Warsaw Univ Technol, Poland.
    Troshin, P. A.
    Lodz Univ Technol, Poland; Skolkovo Innovat Ctr, Russia.
    Ulanski, J.
    Lodz Univ Technol, Poland.
    New copolymers with fluorinated and non-fluorinated benzothiadiazole units for efficient single layer near infra-red photodiodes with fast time response2018In: Synthetic metals, ISSN 0379-6779, E-ISSN 1879-3290, Vol. 243, p. 67-74Article in journal (Refereed)
    Abstract [en]

    We describe the synthesis and photodetecting properties of new, low band-gap copolymers: P1 with 5,6-difluoro-2,1,3-benzothiadiazole and P2 with 2,1,3-benzothiadiazole, both containing diketopyrrolopyrrole acceptor units. These compounds have been used for fabrication of single layer, solution processed photodetectors. For this purpose, two blends with fullerene derivative (6,6)-phenyl-C61-butyric acid methyl ester ([60]PCBM): P1: [60]PCBM and P2:[60]PCBM, were prepared and applied as active layers in bulk-heterojunction photodiodes. For near infrared light (810 nm), these photodetectors, in spite of single layer structure, display competitive performance, showing specific detectivity up to 5.10(11) Jones, responsivity up to 0.3 A/W and rise and fall times of the transient signals below 10 mu s.

  • 2.
    Luszczynska, Beata
    et al.
    Lodz University of Technology, Poland.
    Szymanski, Marek
    Linköping University, Department of Physics, Chemistry and Biology, Surface Physics and Chemistry. Linköping University, Faculty of Science & Engineering.
    Hybrid, organic-inorganic composites for applications in Vis-NIR photodiodes2015In: OPTICS AND PHOTONICS FOR COUNTERTERRORISM, CRIME FIGHTING, AND DEFENCE XI; AND OPTICAL MATERIALS AND BIOMATERIALS IN SECURITY AND DEFENCE SYSTEMS TECHNOLOGY XII, SPIE-INT SOC OPTICAL ENGINEERING , 2015, Vol. 9652, no UNSP 96520WConference paper (Refereed)
    Abstract [en]

    Active layers of bulk heterojunction are extensively studied because of their great potential for application in low-cost optoelectronic devices like photovoiltaic cells and photodiodes. The performance of such devices is strongly influenced by the formed nanostructures which determine the transport ability of the organic composite. We investigated the charge carrier transport properties of two organic composites: poly(3-hexyothiophene) (P3HT) with (6,6)-phenyl-C60-butyric acid methyl ester (60PCBM) and poly(triarylamine) (PTTA) blended with 60PCBM. The optimised organic blend was used as a matrix material for Cu-In-Se nanocrystals. Adding Cu-In-Se nanocrystals to a P3HT/60PCBM bulk heterojunction leads to a significant improvement of the maximum external quantum efficiency of the investigated system from 48% to 70% (at wavelength 520 nm).

  • 3.
    Szymanski, Marek
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Surface Physics and Chemistry. Linköping University, Faculty of Science & Engineering.
    Tu, Deyu
    Linköping University, Department of Electrical Engineering, Information Coding. Linköping University, Faculty of Science & Engineering.
    Forchheimer, Robert
    Linköping University, Department of Electrical Engineering, Information Coding. Linköping University, Faculty of Science & Engineering.
    2-D Drift-Diffusion Simulation of Organic Electrochemical Transistors2017In: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 64, no 12, p. 5114-5120Article in journal (Refereed)
    Abstract [en]

    A 2-D device model of the organic electrochemical transistor is described and validated. Devices with channel length in range 100 nm-10 mm and channel thickness in range 50 nm-5 mu m are modeled. Steady-state, transient, and AC simulations are presented. Using the realistic values of physical parameters, the results are in good agreement with the experiments. The scaling of transconductance, bulk capacitance, and transient responses with device dimensions is well reproduced. The model reveals the important role of the electrical double layers in the channel, and the limitations of device scaling.

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