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  • 1.
    Alpat, B.
    et al.
    Ist Nazl Fis Nucl, Italy; Sabanci Univ, Turkey.
    Gulgun, M.A.
    Sabanci Univ, Turkey.
    Corapcioglu, G.
    Sabanci Univ, Turkey.
    Yildizhan Özyar, Melike
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Di Lazzaro, P.
    ENEA, Italy.
    Murra, D.
    ENEA, Italy.
    Kaplanoglu, T.
    Maprad Srl, Italy.
    Postolache, V
    Maprad Srl, Italy.
    Mengali, S.
    Consorzio CREO, Italy.
    Simeoni, M.
    Consorzio CREO, Italy.
    Urbani, A.
    Consorzio CREO, Italy.
    Testing of substrates for flexible optical solar reflectors: irradiations of nano-hybrid coatings of polyimide films with 20 keV electrons and with 200-400 nm ultraviolet radiation2019In: Journal of Instrumentation, ISSN 1748-0221, E-ISSN 1748-0221, Vol. 14, article id T06003Article in journal (Refereed)
    Abstract [en]

    In the frame of a project aimed at developing a new type of optical solar reflectors we present the scientific and technological issues addressed during irradiations of nano-hybrid coatings on polyimide films by using 20 keV electron beam from a modified use of Scanning Electron Microscope (SEM) and with ultraviolet (UV) dose equal to 300 space-equivalent Sun hours. Details of a new approach to use SEM for low energy electron irradiations and of a new UV irradiation setup are given.

  • 2.
    Baysal, Mustafa
    et al.
    Sabanci Univ, Turkey.
    Bilge, Kaan
    Sabanci Univ, Turkey; Imperial Coll London, England.
    Yildizhan, Melike
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering. Sabanci Univ, Turkey.
    Yorulmaz, Yelda
    Sabanci Univ, Turkey.
    Oncel, Cinar
    Mugla Sitki Kocaman Univ, Turkey.
    Papila, Melih
    Sabanci Univ, Turkey.
    Yurum, Yuda
    Sabanci Univ, Turkey.
    Catalytic synthesis of boron nitride nanotubes at low temperatures2018In: Nanoscale, ISSN 2040-3364, E-ISSN 2040-3372, Vol. 10, no 10, p. 4658-4662Article in journal (Refereed)
    Abstract [en]

    KFeO2 is demonstrated to be an efficient catalyst for the formation of boron nitride nanotubes (BNNT) by thermal chemical vapor deposition (TCVD). This alkali-based catalyst enables the formation of crystalline, multi-walled BNNTs with high aspect ratio at temperatures as low as 750 degrees C, significantly lower than those typically required for the product formation by TCVD.

  • 3.
    Meshkian, Rahele
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Dahlqvist, Martin
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Lu, Jun
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Wickman, Bjorn
    Chalmers Univ Technol, Sweden.
    Halim, Joseph
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Thörnberg, Jimmy
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Tao, Quanzheng
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Li, Shixuan
    Drexel Univ, PA 19104 USA.
    Intikhab, Saad
    Drexel Univ, PA 19104 USA.
    Snyder, Joshua
    Drexel Univ, PA 19104 USA.
    Barsoum, Michel W.
    Drexel Univ, PA 19104 USA.
    Yildizhan, Melike
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Palisaitis, Justinas
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Persson, Per O A
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Rosén, Johanna
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    W-Based Atomic Laminates and Their 2D Derivative W1.33C MXene with Vacancy Ordering2018In: Advanced Materials, ISSN 0935-9648, E-ISSN 1521-4095, Vol. 30, no 21, article id 1706409Article in journal (Refereed)
    Abstract [en]

    Structural design on the atomic level can provide novel chemistries of hybrid MAX phases and their MXenes. Herein, density functional theory is used to predict phase stability of quaternary i-MAX phases with in-plane chemical order and a general chemistry (W2/3M1/32)(2)AC, where M-2 = Sc, Y (W), and A = Al, Si, Ga, Ge, In, and Sn. Of over 18 compositions probed, only twowith a monoclinic C2/c structureare predicted to be stable: (W2/3Sc1/3)(2)AlC and (W2/3Y1/3)(2)AlC and indeed found to exist. Selectively etching the Al and Sc/Y atoms from these 3D laminates results in W1.33C-based MXene sheets with ordered metal divacancies. Using electrochemical experiments, this MXene is shown to be a new, promising catalyst for the hydrogen evolution reaction. The addition of yet one more element, W, to the stable of M elements known to form MAX phases, and the synthesis of a pure W-based MXene establishes that the etching of i-MAX phases is a fruitful path for creating new MXene chemistries that has hitherto been not possible, a fact that perforce increases the potential of tuning MXene properties for myriad applications.

  • 4.
    Zhou, Jie
    et al.
    Chinese Acad Sci, Peoples R China.
    Zha, Xian-Hu
    Chinese Acad Sci, Peoples R China.
    Yildizhan Özyar, Melike
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Eklund, Per
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Xue, Jianming
    Peking Univ, Peoples R China.
    Liao, Meiyong
    NIMS, Japan.
    Persson, Per O A
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Du, Shiyu
    Chinese Acad Sci, Peoples R China.
    Huang, Qing
    Chinese Acad Sci, Peoples R China.
    Two-Dimensional Hydroxyl-Functionalized and Carbon-Deficient Scandium Carbide, ScCxOH, a Direct Band Gap Semiconductor2019In: ACS Nano, ISSN 1936-0851, E-ISSN 1936-086X, Vol. 13, no 2, p. 1195-1203Article in journal (Refereed)
    Abstract [en]

    Two-dimensional (2D) materials have attracted intense attention in nanoscience and nanotechnology due to their outstanding properties. Among these materials, the emerging family of 2D transition metal carbides, carbonitrides, and nitrides (referred to as MXenes) stands out because of the vast available chemical space for tuning materials chemistry and surface termination, offering opportunities for property tailoring. Specifically, semiconducting properties are needed to enable utilization in optoelectronics, but direct band gaps are experimentally challenging to achieve in these 2D carbides. Here, we demonstrate the fabrication of 2D hydroxyl-functionalized and carbon-deficient scandium carbide, namely, ScCxOH, by selective etching of a layered parent ScAI(3)C(3) compound. The 2D configuration is determined as a direct band gap semiconductor, with an experimentally measured band gap approximated at 2.5 eV. Furthermore, this ScCxOH-based device exhibits excellent photoresponse in the ultraviolet-visible light region (responsivity of 0.125 A/W at 360 nm/10 V, and quantum efficiency of 43%). Thus, this 2D ScCxOH direct band gap semiconductor may find applications in visible light detectors, photocatalytic chemistry, and optoelectronic devices.

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