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2005 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 87, no 25, p. 252105-1-252105-3Article in journal (Refereed) Published
Abstract [en]
A conjugated polymer with a low band gap of 1.21 eV, i.e., absorbing infrared light, is demonstrated as active material in field-effect transistors (FETs). The material consists of alternating fluorene units and low band gap segments with electron donor-acceptor-donor units composed of two electron-donating thiophene rings attached on both sides of a thiadiazolo-quinoxaline electron-acceptor group. The polymer is solution-processable and air-stable; the resulting FETs exhibit typical p-channel characteristics and field-effect mobility of 0.03 cm2 V−1 s−1.
National Category
Natural Sciences
Identifiers
urn:nbn:se:liu:diva-34581 (URN)10.1063/1.2142289 (DOI)22029 (Local ID)22029 (Archive number)22029 (OAI)
2009-10-102009-10-102023-12-06