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  • 1.
    Liu, Jinghuang
    et al.
    Xidian Univ, Peoples R China.
    Pang, Tiqiang
    Linköping University, Department of Physics, Chemistry and Biology, Biomolecular and Organic Electronics. Linköping University, Faculty of Science & Engineering.
    Wang, Yucheng
    Northwestern Polytech Univ, Peoples R China.
    Du, Yongqi
    Xidian Univ, Peoples R China.
    Zhang, Yuming
    Xidian Univ, Peoples R China.
    Jia, Renxu
    Xidian Univ, Peoples R China.
    Effect of iodine doping on photoelectric properties of perovskite-based MOS devices2020In: Materials letters (General ed.), ISSN 0167-577X, E-ISSN 1873-4979, Vol. 261, article id 127040Article in journal (Refereed)
    Abstract [en]

    In this article, the PVK based metal-oxide-semiconductor (MOS) capacitor structures were fabricated and the photoelectric performance of the capacitor was carried out to study the intrinsic electrical characteristic of PVK with iodine doped. The electrical hysteresis of the capacitor after iodine doping becomes larger in the dark state, which indicates that the hysteresis behavior of the PVK is caused by the mobile iodine ions. The photocurrent of iodine-doped PVK is significantly greater than that of undoped PVK under illumination, which suggests that the capacitor has better response to light and the photodetectors efficiency also increase after iodine doping. Our results provide a theoretical basis for the potential application of memory devices such as memristors under dark. Meanwhile, it provides a method to improve photodetector performance by adding an appropriate amount of iodine to the PVK precursor solution. (C) 2019 Elsevier B.V. All rights reserved.

  • 2.
    Pang, Tiqiang
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Biomolecular and Organic Electronics. Linköping University, Faculty of Science & Engineering. Xidian Univ, Peoples R China.
    Sun, Kai
    Xidian Univ, Peoples R China; Ningbo Univ, Peoples R China.
    Wang, Yucheng
    Northwestern Polytech Univ, Peoples R China.
    Luan, Suzhen
    Xian Univ Sci and Technol, Peoples R China.
    Zhang, Yuming
    Xidian Univ, Peoples R China.
    Zhu, Yuejin
    Ningbo Univ, Peoples R China.
    Hu, Ziyang
    Ningbo Univ, Peoples R China.
    Jia, Renxu
    Xidian Univ, Peoples R China.
    Hysteresis effects on carrier transport and photoresponse characteristics in hybrid perovskites2020In: Journal of Materials Chemistry C, ISSN 2050-7526, E-ISSN 2050-7534, Vol. 8, no 6, p. 1962-1971Article in journal (Refereed)
    Abstract [en]

    Organic-inorganic hybrid perovskites have recently emerged as promising potential candidate materials in the area of photoelectrics due to their unparalleled optoelectronic features. However, the performance of an optoelectronic device is always affected by the mixed ionic and electronic conducting behavior within perovskites. Herein, the hysteresis effect on carrier mobility and photoresponse characteristics of perovskites were investigated through adding rational additives to the precursor solution. The results show that the perovskite with foreign fullerene derivative (PCBM) additive can suppress hysteresis behavior and increase the mobility by two-fold, while the perovskite with native iodine (I) additive will amplify hysteresis and reduce the mobility by two orders of magnitude at the room temperature compared with that of the pure perovskite. Furthermore, we found that the response characteristics of the photodetectors are strongly affected by the carrier mobility. Capacitance-voltage results confirm the significant change in hysteresis after the introduction of different additives, which explains the changes in mobility and photoresponse time. Our results enlighten the hysteresis effect related to carrier transport and photoresponse characteristics, and provide guidance for the development of reliable, high performance perovskite devices.

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