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  • 1.
    Wang, Yong
    et al.
    Zhejiang Univ, Peoples R China; Zhejiang Univ, Peoples R China; Zhejiang Univ, Peoples R China.
    Wang, Yu
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Elektroniska och fotoniska material. Linköpings universitet, Tekniska fakulteten.
    Gao, Feng
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Elektroniska och fotoniska material. Linköpings universitet, Tekniska fakulteten.
    Yang, Deren
    Zhejiang Univ, Peoples R China; Zhejiang Univ, Peoples R China; Zhejiang Univ, Peoples R China.
    Efficient Monolithic Perovskite/Silicon Tandem Photovoltaics2023Inngår i: ENERGY & ENVIRONMENTAL MATERIALS, ISSN 2575-0356, artikkel-id e12639Artikkel, forskningsoversikt (Fagfellevurdert)
    Abstract [en]

    Tunable bandgaps make halide perovskites promising candidates for developing tandem solar cells (TSCs), a strategy to break the radiative limit of 33.7% for single-junction solar cells. Combining perovskites with market-dominant crystalline silicon (c-Si) is particularly attractive; simple estimates based on the bandgap matching indicate that the efficiency limit in such tandem device is as high as 46%. However, state-of-the-art perovskite/c-Si TSCs only achieve an efficiency of similar to 32.5%, implying significant challenges and also rich opportunities. In this review, we start with the operating mechanism and efficiency limit of TSCs, followed by systematical discussions on wide-bandgap perovskite front cells, interface selective contacts, and electrical interconnection layer, as well as photon management for highly efficient perovskite/c-Si TSCs. We highlight the challenges in this field and provide our understanding of future research directions toward highly efficient and stable large-scale wide-bandgap perovskite front cells for the commercialization of perovskite/c-Si TSCs.

    Fulltekst (pdf)
    fulltext
  • 2.
    Zhang, Jibin
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Elektroniska och fotoniska material. Linköpings universitet, Tekniska fakulteten. Zhengzhou Univ, Peoples R China.
    Cai, Bo
    Nanjing Univ Sci & Technol, Peoples R China; Nanjing Univ Posts & Telecommun NUPT, Peoples R China.
    Zhou, Xin
    Jinan Univ, Peoples R China.
    Yuan, Fanglong
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Elektroniska och fotoniska material. Linköpings universitet, Tekniska fakulteten.
    Yin, Chunyang
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Elektroniska och fotoniska material. Linköpings universitet, Tekniska fakulteten. Univ Elect Sci & Technol China, Peoples R China.
    Wang, Heyong
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Elektroniska och fotoniska material. Linköpings universitet, Tekniska fakulteten.
    Chen, Hongting
    Jinan Univ, Peoples R China; Nanjing Univ Sci & Technol, Peoples R China.
    Ji, Xinzhen
    Zhengzhou Univ, Peoples R China.
    Liang, Xiangfei
    Jinan Univ, Peoples R China.
    Shen, Chao
    Jinan Univ, Peoples R China.
    Wang, Yu
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Elektroniska och fotoniska material. Linköpings universitet, Tekniska fakulteten.
    Ma, Zhuangzhuang
    Zhengzhou Univ, Peoples R China.
    Qing, Jian
    Jinan Univ, Peoples R China.
    Shi, Zhifeng
    Zhengzhou Univ, Peoples R China.
    Hu, Zhang-Jun
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Molekylär ytfysik och nanovetenskap. Linköpings universitet, Tekniska fakulteten.
    Hou, Lintao
    Jinan Univ, Peoples R China.
    Zeng, Haibo
    Nanjing Univ Sci & Technol, Peoples R China.
    Bai, Sai
    Univ Elect Sci & Technol China, Peoples R China.
    Gao, Feng
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Elektroniska och fotoniska material. Linköpings universitet, Tekniska fakulteten.
    Ligand-Induced Cation-p Interactions Enable High-Efficiency, Bright, and Spectrally Stable Rec. 2020 Pure-Red Perovskite Light-Emitting Diodes2023Inngår i: Advanced Materials, ISSN 0935-9648, E-ISSN 1521-4095, artikkel-id 2303938Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    Achieving high-performance perovskite light-emitting diodes (PeLEDs) with pure-red electroluminescence for practical applications remains a critical challenge because of the problematic luminescence property and spectral instability of existing emitters. Herein, high-efficiency Rec. 2020 pure-red PeLEDs, simultaneously exhibiting exceptional brightness and spectral stability, based on CsPb(Br/I)(3) perovskite nanocrystals (NCs) capping with aromatic amino acid ligands featuring cation-pi interactions, are reported. It is proven that strong cation-pi interactions between the PbI6-octahedra of perovskite units and the electron-rich indole ring of tryptophan (TRP) molecules not only chemically polish the imperfect surface sites, but also markedly increase the binding affinity of the ligand molecules, leading to high photoluminescence quantum yields and greatly enhanced spectral stability of the CsPb(Br/I)(3) NCs. Moreover, the incorporation of small-size aromatic TRP ligands ensures superior charge-transport properties of the assembled emissive layers. The resultant devices emitting at around 635 nm demonstrate a champion external quantum efficiency of 22.8%, a max luminance of 12 910 cd m(-2), and outstanding spectral stability, representing one of the best-performing Rec. 2020 pure-red PeLEDs achieved so far.

  • 3.
    Fan, Xiangyang
    et al.
    Pukyong Natl Univ, South Korea.
    Wang, Yu
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Elektroniska och fotoniska material. Linköpings universitet, Tekniska fakulteten.
    Shen, Xinyu
    Sungkyunkwan Univ SKKU, South Korea; Univ Oxford, England.
    Yu, Zhongkai
    Sungkyunkwan Univ SKKU, South Korea.
    Jeong, Woo Hyeon
    Sungkyunkwan Univ SKKU, South Korea.
    Jang, Ji Won
    Hanyang Univ, South Korea.
    Kim, Yeong Gyeong
    Pukyong Natl Univ, South Korea.
    Woo, Seung-Je
    Seoul Natl Univ, South Korea.
    Ahn, Hyungju
    POSTECH, South Korea.
    Choi, Hyosung
    Hanyang Univ, South Korea.
    Lee, Tae-Woo
    Seoul Natl Univ, South Korea.
    Park, Sung Heum
    Pukyong Natl Univ, South Korea.
    Gao, Feng
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Elektroniska och fotoniska material. Linköpings universitet, Tekniska fakulteten.
    Lee, Bo Ram
    Sungkyunkwan Univ SKKU, South Korea.
    Phosphine oxide modulator-ameliorated hole injection for blue perovskite light-emitting diodes2023Inngår i: Journal of Materials Chemistry A, ISSN 2050-7488, E-ISSN 2050-7496, Vol. 11, nr 38, s. 20808-20815Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    Despite the enormous developments in perovskite light-emitting diodes (PeLEDs) recently, obtaining efficient blue PeLEDs is still considered a critical challenge due to the non-radiative recombination and unbalanced charge injection caused by the unmatched carrier mobility and the deep hole-injection barrier between the hole-transport layer (HTL) and the emissive layer (EML). Herein, we incorporate tris(4-trifluoromethylphenyl)phosphine oxide (TMFPPO), obtained through a facile oxidation synthesis process, into poly(9-vinylcarbazole) (PVK). TMFPPO incorporation modulated the energy level and hole mobility of the binary-blend HTLs to eliminate the hole-injection barrier and balance the charge injection within the EML. Consequently, the blue PeLEDs with blended HTL presented an external quantum efficiency (EQE) of 7.23% centred at 477 nm, which was much higher than the EQE of a PVK device (4.95%). Our results demonstrate that modulating the energy level and charge injection of the HTL in the device is a promising method for obtaining efficient blue PeLEDs. TMFPPO is developed and incorporated into PVK to modulate the hole mobility and energy level of the hole-transport layer, giving rise to a barrier-free blue perovskite light-emitting diode and an enhancement of the EQE from 4.95 to 7.23% at 477 nm.

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