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  • 1. Arnaudov, B.
    et al.
    Paskov, Plamen
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Materiefysik.
    Harati Zadeh, Hamid
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi.
    Holtz, Per-Olof
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Materiefysik.
    Monemar, Bo
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Materiefysik.
    Kamiyama, S.
    Iwaya, M.
    Amano, H.
    Akasaki, I.
    Radiative recombination mechanism in highly modulation doped GaN/AlGaN multiple quantum wells2006Inngår i: Physica Status Solidi. C, Current topics in solid state physics, ISSN 1610-1634, E-ISSN 1610-1642, Vol. 6, s. 1888-1891Artikkel i tidsskrift (Fagfellevurdert)
  • 2.
    Arwin, Hans
    et al.
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Tillämpad optik.
    Wronkowska, A A
    Firszt, F
    Wronkowski, A
    Wakula, M
    Strzalkowski, K
    Paszkowicz, W
    Characterisation of Cd1-x-yZnxBeySe crystals by spectroscopic ellipsometry and luminescence2006Inngår i: Physica Status Solidi. C, Current topics in solid state physics, ISSN 1610-1634, E-ISSN 1610-1642, s. 1193-1196Artikkel i tidsskrift (Fagfellevurdert)
  • 3.
    Berlind, Torun
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tillämpad optik. Linköpings universitet, Tekniska högskolan.
    Pribi, G. K.
    J. A. Woollam Co Inc., Lincoln, NE, USA.
    Thompson, D.
    Department of Electrical Engineering, University of Nebraska-Lincoln, NE, USA.
    Woollam, J. O.
    J. A. Woollam Co Inc., Lincoln, NE, USA.
    Arwin, Hans
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tillämpad optik. Linköpings universitet, Tekniska högskolan.
    Effects of ion concentration on refractive indices offluids measured by the minimum deviation technique2008Inngår i: Physica Status Solidi. C, Current topics in solid state physics, ISSN 1610-1634, E-ISSN 1610-1642, Vol. 5, nr 5, s. 1249-1252Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    The prism minimum deviation technique has been used to measure the fluid dependence of refractive indices. Fluids with varying ion concentration (0 to 1.0 M) and varying protein concentration (0.01-10 mg/ml) have been examined and the measurements show that these parameters influence the refractive index values. Also it is shown by simulations that it is important to take the change of refractive index of the fluid into account when evaluating insitu protein adsorption measurements.

  • 4.
    Bi, Zhaoxia
    et al.
    Solid State Lighting Center, the Nanometer Structure Consortium, Lund University, Box 118, 221 00 Lund, Sweden.
    Lindgren, David
    Solid State Lighting Center, the Nanometer Structure Consortium, Lund University, Box 118, 221 00 Lund, Sweden.
    Johansson, B. Jonas
    Solid State Lighting Center, the Nanometer Structure Consortium, Lund University, Box 118, 221 00 Lund, Sweden.
    Ek, Martin
    Center for Analysis and Synthesis/nCHREM, Lund University, Box 124, 221 00 Lund, Sweden.
    Wallenberg, L. Reine
    Center for Analysis and Synthesis/nCHREM, Lund University, Box 124, 221 00 Lund, Sweden.
    Gustafsson, Anders
    Solid State Lighting Center, the Nanometer Structure Consortium, Lund University, Box 118, 221 00 Lund, Sweden.
    Borgström, Magnus T
    Solid State Lighting Center, the Nanometer Structure Consortium, Lund University, Box 118, 221 00 Lund, Sweden.
    Ohlsson, Jonas
    QuNano AB, Ideon Science Park, Scheelevägen 17, 223 70 Lund, Sweden.
    Monemar, Bo
    Solid State Lighting Center, the Nanometer Structure Consortium, Lund University, Box 118, 221 00 Lund, Sweden.
    Samuelson, Lars
    Solid State Lighting Center, the Nanometer Structure Consortium, Lund University, Box 118, 221 00 Lund, Sweden.
    InN quantum dots on GaN nanowires grown by MOVPE2014Inngår i: Physica Status Solidi. C, Current topics in solid state physics, ISSN 1610-1634, E-ISSN 1610-1642, Vol. 11, nr 3-4, s. 421-424Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    In this work, growth of InN quantum dots (QDs) on GaN nanowires (NWs) by metal-organic vapour phase epitaxy is demonstrated, illustrating the feasibility to combine 0D and 1D structures for nitride semiconductors. Selective area growth was used to generate arrays of c-oriented GaN NWs using Si3N4 as the mask material. In general, InN QDs tend to form at the NW edges between the m-plane side facets, but the QD growth can also be tuned to the side facets by controlling the growth temperature and the growth rate. TEM characterization reveals that I1-type stacking faults are formed in the QDs and originate from the misfit dislocations at the InN/GaN interface. Photoluminescence measurement at 4 K shows that the peak shifts to high energy with reduced dot size. (© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

  • 5.
    Dagnelund, Daniel
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Funktionella elektroniska material. Linköpings universitet, Tekniska högskolan.
    Tu, C. W.
    Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California, USA .
    Polimeni, A.
    INFM and Dipartimento di Fisica, Università di Roma “La Sapienza”, Roma, Italy.
    Capizzi, M.
    INFM and Dipartimento di Fisica, Università di Roma “La Sapienza,” Roma, Italy .
    Chen, Weimin
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Funktionella elektroniska material. Linköpings universitet, Tekniska högskolan.
    Buyanova, Irina
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Funktionella elektroniska material. Linköpings universitet, Tekniska högskolan.
    Effect of thermal annealing on defects in post-growth hydrogenated GaNP2013Inngår i: Physica Status Solidi. C, Current topics in solid state physics, ISSN 1610-1634, E-ISSN 1610-1642, Vol. 10, nr 4, s. 561-563Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    Effect of thermal annealing on paramagnetic centers in post-growth hydrogenated GaN0.0081P0.9919 epilayer is examined by means of photoluminescence and optically detected magnetic resonance (ODMR) techniques. In recent studies, several Ga-interstitial (Gai) related centers were found to be activated by the presence of hydrogen in the hydrogenated GaNP alloys. These centers compete with near-band edge radiative recombination. Annealing at 400 ºC in Ar-ambient is found to cause quenching of the Gai-related ODMR signals that were activated by post-growth hydrogenation. We tentatively ascribe this effect to dissociation of the H-Gai complexes and subsequent out-diffusion of H.

  • 6. Donchev, V.
    et al.
    Karlsson, Fredrik
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Materiefysik.
    Moskalenko, Evgenii
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi.
    Holtz, Per-Olof
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Materiefysik.
    Monemar, Bo
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Materiefysik.
    Schoenfeld, J.M.
    Garcia, J.M.
    Petroff, M.
    Temperature Study of the Photoluminescence of a Single InAs/GaAs Quantum Dot2004Inngår i: Physica Status Solidi. C, Current topics in solid state physics, ISSN 1610-1634, E-ISSN 1610-1642, Vol. 3, s. 608-Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    Presented at: The 8th Conference on Optics of Excitons in Confined Systems, Lecce, Italy, February 3 - 4, 2003

  • 7.
    Gogova, D.
    et al.
    Leibniz-Institut für Kristallzüchtung, Max-Born-Straße 2, 12489 Berlin, Germany; Central Laboratory of Solar Energy and New Energy Sources at the Bulgarian Academy of Sciences, Blvd. Tzarigradsko shose 72, 1784 Sofia, Bulgaria.
    Siche, D.
    Leibniz-Institut für Kristallzüchtung, Max-Born-Straße 2, 12489 Berlin, Germany.
    Kwasniewski, A.
    Leibniz-Institut für Kristallzüchtung, Max-Born-Straße 2, 12489 Berlin, Germany.
    Schmidbauer, M.
    Leibniz-Institut für Kristallzüchtung, Max-Born-Straße 2, 12489 Berlin, Germany.
    Fornari, R.
    Leibniz-Institut für Kristallzüchtung, Max-Born-Straße 2, 12489 Berlin, Germany.
    Hemmingsson, Carl
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska fakulteten.
    Yakimova, Rositsa
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska fakulteten. Central Laboratory of Solar Energy and New Energy Sources at the Bulgarian Academy of Sciences, Blvd. Tzarigradsko shose 72, 1784 Sofia, Bulgaria.
    Monemar, Bo
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska fakulteten.
    HVPE GaN substrates: growth and characterization2010Inngår i: Physica Status Solidi. C, Current topics in solid state physics, ISSN 1610-1634, E-ISSN 1610-1642, Vol. 7, nr 7-8, s. 1756-1759Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    GaN substrates with low dislocation densities were prepared by halide vapor-phase epitaxy (HVPE) on c-plane sapphire and by means of a post-growth laser-induced lift-off or natural stress-induced (self-) separation process. The HVPE growth on InGaN/GaN buffer layers and subsequent self-separation method was seen as advantageous, in comparison with the laser-induced lift-off one, in terms of lower cost and better crystalline quality of the GaN material obtained. (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

  • 8.
    Hofmann, T.
    et al.
    Institut fur Experimentelle Physik II, Universität Leipzig, Leipzig, Germany.
    Chavdarov, T.
    Institut fur Experimentelle Physik II, Universität Leipzig, Leipzig, Germany.
    Darakchieva, Vanya
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska högskolan.
    Lu, H.
    Department of Electrical and Computer Engineering, Cornell University, USA.
    Schaff, W.J.
    Department of Electrical and Computer Engineering, Cornell University, USA.
    Schubert, M.
    Department of Electrical Engineering and Center for Materials Research and Analysis (CMRA), University of Nebraska-Lincoln, Lincoln, USA.
    Anisotropy of the Γ-point effective mass and mobility in hexagonal InN2006Inngår i: Physica Status Solidi. C, Current topics in solid state physics, ISSN 1610-1634, E-ISSN 1610-1642, Vol. 3, nr 6, s. 1854-1857Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    We determine the anisotropic electron effective mass and mobility parameters in wurtzite InN thin films with free electron concentration Nfrom 1.8 × 1017 cm–3 to 9.5 × 1018 cm–3 using Infrared Magneto-optic Generalized Ellipsometry. The room-temperature measurements were carried out with magnetic fields up to 4.5 T. For the Γ-point we estimate m* = 0.047m0 and m* = 0.039m0 for polarization perpendicular and parallel to the c -axis, respectively. Scattering by impurities or ionized donors may explain the decrease of mobility for polarization parallel to the c -axis from 1600 cm2/(Vs) to 800 cm2/(Vs) with increase in N , where the perpendicular mobility is further decreased, likely caused by additional grain boundary scattering.

  • 9. Kasic, A.
    et al.
    Schubert, M.
    Inst. f. Experimentelle Physik II, Universität Leipzig, Linnéstraße 5, 04103 Leipzig, Germany.
    Off, J.
    4. Physikalisches Institut, Universität Stuttgart, Pfaffenwaldring 57, 70569 Stuttgart, Germany, OSRAM Opto Semiconductors, Wernerwerkstr. 2, 93049 Regensburg, Germany.
    Kuhn, B.
    4. Physikalisches Institut, Universität Stuttgart, Pfaffenwaldring 57, 70569 Stuttgart, Germany, Robert Bosch GmbH, Tübinger Str. 123, 72762 Reutlingen, Germany.
    Scholz, F.
    4. Physikalisches Institut, Universität Stuttgart, Pfaffenwaldring 57, 70569 Stuttgart, Germany, Abteilung Optoelektronik, Universität Ulm, 89069 Ulm, Germany.
    Einfeldt, S.
    Inst. für Festkörperphysik, Universität Bremen, Kufsteiner Straße NW 1, 28359 Bremen, Germany.
    Bottcher, T.
    Böttcher, T., Inst. für Festkörperphysik, Universität Bremen, Kufsteiner Straße NW 1, 28359 Bremen, Germany.
    Hommel, D.
    Inst. für Festkörperphysik, Universität Bremen, Kufsteiner Straße NW 1, 28359 Bremen, Germany.
    As, D.J.
    Fachbereich Physik, Universität Paderborn, Warburger Straße 100, 33095 Paderborn, Germany.
    Kohler, U.
    Köhler, U., Fachbereich Physik, Universität Paderborn, Warburger Straße 100, 33095 Paderborn, Germany.
    Dadgar, A.
    Inst. für Experimentelle Physik, Otto-von Guericke Univ. Magdeburg, Universitätsplatz 2, 39016 Magdeburg, Germany.
    Krost, A.
    Inst. für Experimentelle Physik, Otto-von Guericke Univ. Magdeburg, Universitätsplatz 2, 39016 Magdeburg, Germany.
    Saito, Y.
    Faculty of Science and Engineering, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu, Shiga 525-8577, Japan.
    Nanishi, Y.
    Faculty of Science and Engineering, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu, Shiga 525-8577, Japan.
    Correia, M.R.
    Departamento de Física, Universidade de Aveiro, 3810-193 Aveiro, Portugal.
    Pereira, S.
    Departamento de Física, Universidade de Aveiro, 3810-193 Aveiro, Portugal.
    Darakchieva, Vanya
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Materiefysik.
    Monemar, Bo
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Materiefysik.
    Amano, H.
    High-Tech Research Center, Dept. of Mat. Sci. and Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan.
    Akasaki, I.
    High-Tech Research Center, Dept. of Mat. Sci. and Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan.
    Wagner, G.
    Inst. f. Nichtklassische Chemie, Universität Leipzig, Permoserstraße 15, 04318 Leipzig, Germany.
    Phonons and free-carrier properties of binary, ternary, and quaternary group-III nitride layers measured by infrared Spectroscopic Ellipsometry2003Inngår i: Physica Status Solidi. C, Current topics in solid state physics, ISSN 1610-1634, E-ISSN 1610-1642, Vol. 0, nr 6 SPEC. ISS., s. 1750-1769Konferansepaper (Annet vitenskapelig)
    Abstract [en]

    This work reviews recent ellipsometric investigations of the infrared dielectric functions of binary, ternary, and quaternary group-III nitride films. Spectroscopic Ellipsometry in the mid-infrared range is employed for the first time to determine phonon and free-carrier properties of individual group-III nitride heterostructure components, including layers of some ten nanometer thickness. Assuming the effective carrier mass, the free-carrier concentration and mobility parameters can be quantified upon model analysis of the infrared dielectric function. In combination with Hall-effect measurements, the effective carrier masses for wurtzite n- and p-type GaN and n-type InN are obtained. The mode behavior of both the E1(TO) and A1(LO) phonons are determined for ternary compounds. For strain-sensitive phonon modes, the composition and strain dependences of the phonon frequencies are differentiated and quantified. Information on the crystal quality and compositional homogeneity of the films can be extracted from the phonon mode broadening parameters. A comprehensive IR dielectric function database of group-III nitride materials has been established and can be used for the analysis of complex thin-film heterostructures designed for optoelectronic device applications. Information on concentration and mobility of free carriers, thickness, alloy composition, average strain state, and crystal quality of individual sample constituents can be derived. © 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  • 10. Khranovskyy, V.
    et al.
    Grossner, U.
    Lazorenko, V.
    Lashkarev, G.
    Svensson, B.G.
    Yakimova, Rositsa
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Materiefysik.
    Study of annealing influence on electrical and morphological properties of ZnO: Ga thin films2006Inngår i: Physica Status Solidi. C, Current topics in solid state physics, ISSN 1610-1634, E-ISSN 1610-1642, Vol. 3, nr 4, s. 780784-Artikkel i tidsskrift (Fagfellevurdert)
  • 11.
    Larsson, Henrik
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi. Linköpings universitet, Tekniska högskolan.
    Gogova, Daniela
    Linköpings universitet, Institutionen för fysik, kemi och biologi. Linköpings universitet, Tekniska högskolan.
    Kasic, A.
    Linköpings universitet, Institutionen för fysik, kemi och biologi. Linköpings universitet, Tekniska högskolan.
    Yakimova, Rositsa
    Linköpings universitet, Institutionen för fysik, kemi och biologi. Linköpings universitet, Tekniska högskolan.
    Monemar, Bo
    Linköpings universitet, Institutionen för fysik, kemi och biologi. Linköpings universitet, Tekniska högskolan.
    Miskys, C. R.
    Walter Schottky Institut, Technische Universität Munchen, Germany.
    Stutzmann, M.
    Walter Schottky Institut, Technische Universität Munchen, Germany.
    Free-standing HVPE-GaN Layers2003Inngår i: Physica Status Solidi. C, Current topics in solid state physics, ISSN 1610-1634, E-ISSN 1610-1642, Vol. 0, nr 7, s. 1985-1988Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    We have grown GaN layers with a thickness up to 340 μm in an rf-heated vertical HVPE reactor with a bottom-fed design. The GaN layers were separated from the sapphire substrate by a LLO process. The free-standing GaN was investigated by HRXRD, AFM and low temperature CL. The FWHM values of the ω-scans are 96 and 129 arcsec for the (104) and (002) reflection, respectively, which indicates high crystalline quality. The c and a lattice parameters are determined as c = 0.51850 ± 0.00004 nm and a = 0.31890 ± 0.00004 nm, indicating stress free material. The etch pit density was estimated to be 1 × 107 cm−2. The used HVPE growth procedure together with the subsequent LLO are obviously capable to provide high-quality free-standing GaN material for further epitaxial overgrowth.

  • 12. Ochalski, T.J.
    et al.
    Grzegorczyk, A.
    Rudzinski, M.
    Larsen, P.K.
    Kowalczyk, E.
    Holtz, Per-Olof
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Materiefysik.
    Bergman, Peder
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Materiefysik.
    Paskov, Plamen
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Materiefysik.
    Optical study of AlGaN/GaN based HEMT structures2005Inngår i: Physica Status Solidi. C, Current topics in solid state physics, ISSN 1610-1634, E-ISSN 1610-1642, Vol. 2, s. 2791-2794Artikkel i tidsskrift (Fagfellevurdert)
  • 13.
    Paskov, Plamen
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi. Linköpings universitet, Tekniska högskolan.
    Bergman, Peder
    Linköpings universitet, Institutionen för fysik, kemi och biologi. Linköpings universitet, Tekniska högskolan.
    Darakchieva, Vanya
    Linköpings universitet, Institutionen för fysik, kemi och biologi. Linköpings universitet, Tekniska högskolan.
    Paskova, Tanja
    Linköpings universitet, Institutionen för fysik, kemi och biologi. Linköpings universitet, Tekniska högskolan.
    Monemar, Bo
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial.
    Iwaya, M.
    Kamiyama, S.
    Amano, H.
    Akasaki, I.
    Photoluminescence of GaN/AlN superlattices grown by MOCVD2005Inngår i: Physica Status Solidi. C, Current topics in solid state physics, ISSN 1610-1634, E-ISSN 1610-1642, Vol. 2, s. 2345-2348Artikkel i tidsskrift (Fagfellevurdert)
  • 14.
    Paskov, Plamen
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi. Linköpings universitet, Tekniska högskolan.
    Bergman, Peder
    Linköpings universitet, Institutionen för fysik, kemi och biologi. Linköpings universitet, Tekniska högskolan.
    Monemar, Bo
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial.
    Keller, S.
    DenBaars, S.P.
    Mishra, U.K.
    Spatially direct and indirect transitions in InGaN/GaN structures with coupled quantum wells2005Inngår i: Physica Status Solidi. C, Current topics in solid state physics, ISSN 1610-1634, E-ISSN 1610-1642, Vol. 2, s. 2337-2340Artikkel i tidsskrift (Fagfellevurdert)
  • 15.
    Paskov, Plamen
    et al.
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Materiefysik.
    Schifano, R.
    Malinauskas, T.
    Paskova, T.
    Bergman, Peder
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Materiefysik.
    Monemar, Bo
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Materiefysik.
    Figge, S.
    Hommel, D.
    Haskell, B.A.
    Fini, P.T.
    Speck, J.S.
    Nakamura, S.
    Photoluminescence of a -plane GaN: comparison between MOCVD and HVPE grown layers2006Inngår i: Physica Status Solidi. C, Current topics in solid state physics, ISSN 1610-1634, E-ISSN 1610-1642, Vol. 6, s. 1499-1502Artikkel i tidsskrift (Fagfellevurdert)
  • 16. Paskova, T.
    et al.
    Darakchieva, Vanya
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Materiefysik.
    Paskov, Plamen
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Materiefysik.
    Monemar, Bo
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Materiefysik.
    Suski, T.
    Bockowski, M.
    Ashkenov, N.
    Schubert, M.
    Bending in HVPE GaN free-standing films: effects of laser lift-off, polishing and high temperature annealing2006Inngår i: Physica Status Solidi. C, Current topics in solid state physics, ISSN 1610-1634, E-ISSN 1610-1642, Vol. 3, s. 1475-1478Artikkel i tidsskrift (Fagfellevurdert)
  • 17.
    Paskova, Tanja
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi. Linköpings universitet, Tekniska högskolan.
    Darakchieva, Vanya
    Linköpings universitet, Institutionen för fysik, kemi och biologi. Linköpings universitet, Tekniska högskolan.
    Paskov, Plamen
    Linköpings universitet, Institutionen för fysik, kemi och biologi. Linköpings universitet, Tekniska högskolan.
    Birch, Jens
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
    Valcheva, E.
    Persson, Per
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik.
    Arnaudov, B.
    Tungasmita, S.
    Monemar, Bo
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial.
    Nonpolar a-plane HVPE GaN: growth and in-plane anisotropic properties2005Inngår i: Physica Status Solidi. C, Current topics in solid state physics, ISSN 1610-1634, E-ISSN 1610-1642, Vol. 2, s. 2027-2031Artikkel i tidsskrift (Fagfellevurdert)
  • 18.
    Paskova, Tanja
    et al.
    Kyma Technologies Inc.
    Preble, E. A.
    Kyma Technologies Inc.
    Hanser, A. D.
    Kyma Technologies Inc.
    Evans, K. R.
    Kyma Technologies Inc.
    Kröger, R.
    University of York.
    Paskov, Plamen
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska högskolan.
    Cheng, A. J.
    Auburn University.
    Park, M.
    Auburn University.
    Grenko, J. A.
    North Carolina State University.
    Johnson, M. A. L.
    North Carolina State University.
    Polar and nonpolar HVPE GaN substrates: impact of doping on the structural, electrical and optical characteristics2009Inngår i: Physica Status Solidi. C, Current topics in solid state physics, ISSN 1610-1634, E-ISSN 1610-1642, Vol. 6, nr 2, s. 344-347Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    Polar and nonpolar bulk GaN substrates with low defect density and high structural and optical quality are demonstrated. The effect of doping by silicon, oxygen and iron within moderate doping levels on the properties of the polar GaN substrates was found uncompromised, as confirmed by high resolution X-ray diffraction and low temperature photoluminescence spectroscopy. In contrast, the lattice parameters were affected significantly, which has to be considered in the subsequent homoepitaxial device growth. The boule growth and respectively the nonpolar substrate homogeneity were found to be hampered by the doping, due to surface microcracking and higher impurity incorporation, while n-type undoped nonpolar substrates were demonstrated of superior quality.

  • 19. Scott, K.
    et al.
    Butcher, A.
    Wintrebert-Fouquet, M.
    Chen, P.P.-T.
    Prince, K.E.
    Timmers, H.
    Shrestha, S.K.
    Shubina, Tatiana
    Linköpings universitet, Institutionen för fysik, kemi och biologi. Linköpings universitet, Tekniska högskolan.
    Ivanov, S.V.
    Wuhrer, R.
    Philips, M.R.
    Monemar, Bo
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial.
    Non-stoichiometry and non-homogeneity in InN2005Inngår i: Physica Status Solidi. C, Current topics in solid state physics, ISSN 1610-1634, E-ISSN 1610-1642, Vol. 2, s. 2263-2266Artikkel i tidsskrift (Fagfellevurdert)
  • 20.
    Sedrine, N. Ben
    et al.
    Instituto Tecnológico e Nuclear, 2686-953 Sacavèm, Portugal.
    Darakchieva, Vanya
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska högskolan.
    Lindgren, D
    Division of Solid State Physics, Lund University, 221 00 Lund, Sweden.
    Monemar, Bo
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska högskolan.
    Che, S. B.
    Graduate School of Electrical and Electronic Engineering, Chiba University, 263-8522 Chiba, Japan.
    Ishitani, Y
    Graduate School of Electrical and Electronic Engineering, Chiba University, 263-8522 Chiba, Japan.
    Yoshikawa, A
    Graduate School of Electrical and Electronic Engineering, Chiba University, 263-8522 Chiba, Japan.
    Optical properties of InN/In0.73Ga0.27N multiple quantum wells studied by spectroscopic ellipsometry2011Inngår i: Physica Status Solidi. C, Current topics in solid state physics, ISSN 1610-1634, E-ISSN 1610-1642, Vol. 8, nr 5, s. 1629-1632Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    In this work we study the optical properties of two high quality fifty-periods of In-polarity InN/In0.73Ga0.27N MQWs samples, grown by radio-frequency plasma-assisted molecular beam epitaxy, with different well (0.5-1 nm) and barrier thicknesses (3-4 nm). We employ spectroscopic ellipsometry at room temperature in the energy range from 0.6 to 6 eV, and incidence angles of 60 and 70°. Ellipsometric data were successfully modelled using the model dielectric function approach and a multilayer model assuming the MQWs as a homogeneous layer. The E0, A and E1 MQWs transition energies were determined and found to exhibit a blueshift with decreasing the well thickness.

  • 21.
    Shubina, Tatiana
    et al.
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi.
    Glazov, M.M.
    Ivanov, S.V.
    Vasson, A.
    Leymarie, J.
    Monemar, Bo
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Materiefysik.
    Araki, T.
    Naoi, H.
    Nanishi, Y.
    Effects of non-stoichiometry and compensation on fundamental parameters of heavily-doped InN2007Inngår i: Physica Status Solidi. C, Current topics in solid state physics, ISSN 1610-1634, E-ISSN 1610-1642, Vol. 4, nr 7, s. 2474-2477Artikkel i tidsskrift (Fagfellevurdert)
  • 22. Shubina, Tatiana
    et al.
    Karlsson, Fredrik
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Materiefysik.
    Jmerik, V.N.
    Ivanov, S.V.
    Kavokin, P.S.
    Holtz, Per-Olof
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Materiefysik.
    Kopev, P.S.
    Monemar, Bo
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Materiefysik.
    Narrow-line excitonic luminescence in GaN/AlGaN nanostructures based on inversion domains2003Inngår i: Physica Status Solidi. C, Current topics in solid state physics, ISSN 1610-1634, E-ISSN 1610-1642, Vol. 0, nr 7, s. 2716-2720Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    Presented at: 5th International Conference on Nitride Semiconductors (ICNS-5), Nara, Japan, 25-30 May, 2003 

  • 23.
    Shubina, Tatiana
    et al.
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi.
    Vasson, A.
    Leymarie, J.
    Gippius, N.A.
    Jmerik, V.N.
    Monemar, Bo
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Materiefysik.
    Ivanov, S.V.
    Localized plasmons at pores and clusters within inhomogeneous indium nitride films2007Inngår i: Physica Status Solidi. C, Current topics in solid state physics, ISSN 1610-1634, E-ISSN 1610-1642, Vol. 4, nr 7, s. 2445-2448Artikkel i tidsskrift (Fagfellevurdert)
  • 24.
    Stehr, Jan Eric
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Funktionella elektroniska material. Linköpings universitet, Tekniska fakulteten.
    Chen, Weimin
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Funktionella elektroniska material. Linköpings universitet, Tekniska fakulteten.
    Reddy, N. K.
    Humboldt University, Institute of Chemistry, Berlin, Germany .
    Tu, C. W.
    Department of Electrical and Computer Engineering, University of California, La Jolla, CA, USA .
    Buyanova, Irina
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Funktionella elektroniska material. Linköpings universitet, Tekniska fakulteten.
    Unintentional nitrogen incorporation in ZnO nanowires detected by electron paramagnetic resonance spectroscopy2016Inngår i: Physica Status Solidi. C, Current topics in solid state physics, ISSN 1610-1634, E-ISSN 1610-1642, Vol. 13, nr 7-9, s. 572-575Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    Unintentional incorporation of nitrogen in ZnO nanowires (NWs) grown by rapid thermal chemical vapor deposition is unambiguously proven by electron paramagnetic resonance spectroscopy. The nitrogen dopants are suggested to be provided from contaminations in the source gases. The majority of incorporated nitrogen atoms are concluded to reside at oxygen sites, i.e. in the atomic configuration of nitrogen substituting for oxygen (NO). The NO centers are suggested to be located in proximity to the NW surface, based on their reduced optical ionization energy as compared with that in a bulk material. This implies that the defect formation energy at the NW surface could be lower than its bulk value, consistent with previous theoretical predictions. The obtained results underline that nitrogen can be easily incorporated in ZnO nanostructures which may be of advantage for realizing p-type conducting ZnO via N doping. On the other hand, the awareness of this process can help to prevent such unintentional doping in structures with desired n-type conductivity.

  • 25.
    Tumėnas, Saulius
    et al.
    Center for Physical Sciences and Technology, Vilnius, Lithuania.
    Karpus, Vytautas
    Center for Physical Sciences and Technology, Vilnius, Lithuania.
    Bertulis, Klemensas
    Center for Physical Sciences and Technology, Vilnius, Lithuania.
    Arwin, Hans
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tillämpad optik. Linköpings universitet, Tekniska högskolan.
    Dielectric function and refractiveindex of GaBixAs1-x(x = 0.035, 0.052, 0.075)2012Inngår i: Physica Status Solidi. C, Current topics in solid state physics, ISSN 1610-1634, E-ISSN 1610-1642, Vol. 9, nr 7, s. 1633-1635Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    MBE grown GaBiAs epitaxial layers with Bi content of3.5 %, 5.2 %, and 7.5 %, sandwiched between GaAs,have been investigated by spectroscopic ellipsometry inthe infrared and absorption threshold spectral regions.The real and imaginary parts of the dielectric function ofGaBiAs indicate bandgap Eg and spin-orbit splitting Δ0+values close to literature data. The refractive index ofGaBiAs in the IR region 0.2–0.8 eV exceeds that ofGaAs by ca. 0.8 %, 2.3 %, and 3.6 %, for Bi content3.5 %, 5.2 %, and 7.5 %, respectively.

  • 26.
    Willander, Magnus
    et al.
    Linköpings universitet, Institutionen för teknik och naturvetenskap. Linköpings universitet, Tekniska högskolan.
    Asif, Muhammad
    Linköpings universitet, Institutionen för teknik och naturvetenskap. Linköpings universitet, Tekniska högskolan.
    Zaman, Siama
    Linköpings universitet, Institutionen för teknik och naturvetenskap. Linköpings universitet, Tekniska högskolan.
    Zainelabdin, A.
    Linköpings universitet, Institutionen för teknik och naturvetenskap. Linköpings universitet, Tekniska högskolan.
    Bano, Nargis
    Linköpings universitet, Institutionen för teknik och naturvetenskap. Linköpings universitet, Tekniska högskolan.
    Al-Hilli, Safaa
    Linköpings universitet, Institutionen för teknik och naturvetenskap. Linköpings universitet, Tekniska högskolan.
    Nour, Omer
    Linköpings universitet, Institutionen för teknik och naturvetenskap. Linköpings universitet, Tekniska högskolan.
    Different interfaces to crystalline ZnO nanorods and their applications2009Inngår i: Physica Status Solidi. C, Current topics in solid state physics, ISSN 1610-1634, E-ISSN 1610-1642, Vol. 6, nr 12, s. 2683-2694Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    In this paper we will demonstrate the growth of crystalline ZnO nanorods on different substrates including some of crystalline as well as amorphous nature. The application of these ZnO nanorods to optoelectronics and to bioelectronics will be highlighted. We demonstrate the fabrication of n-ZnO nano-rods/p-type substrates and fabricated light emitting diodes (LEDs) based on these structures. Among the presented LEDs, a hybrid configuration based on the integration of p-type polymers on flexible plastic provides a potential for developing large area white LEDs. Moreover, ZnO nanorods based intracellular measurements using bare and functionalized ZnO surfaces were demonstrated to be a valuable non-destructive tool for obtaining intracellular measurements paving the way for a wealth of intracellular information.

  • 27.
    Willander, Magnus
    et al.
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för teknik och naturvetenskap.
    Klason, P.
    Yang, L.L.
    Al Hilli, Safaa
    Zhao, Qingxiang
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för teknik och naturvetenskap.
    Nour, Omer
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för teknik och naturvetenskap.
    ZnO nanowires: chemical growth, electro-deposition and application to intracellular nano-sensors2008Inngår i: Physica Status Solidi. C, Current topics in solid state physics, ISSN 1610-1634, E-ISSN 1610-1642, Vol. 5, nr 9, s. 3076-3083Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    In this paper we present our results on growth, characterization, and nano-devices based on ZnO nano-structures. The ZnO nano-structures were grown by mainly two methods, the catalytic Vapor Liquid Solid (VLS) and the low temperature chemical growth. We show that by multiple coating combined with low temperature chemical growth, well aligned with size controlled ZnO nanowires on silicon substrates can be achieved. The dissolution, due to its important on the stability of ZnO nano-structures in aqueous medium, is then discussed and some preliminary experimental results are shown. Basic Optical characteristics of ZnO nano-rods are briefly discussed. Finally, electrochemical intracellular nano-sensors based on ZnO nano-wires are demonstrated as efficient nano-sensors for monitoring the human cell activity with minute pH changes. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

  • 28.
    Willander, Magnus
    et al.
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för teknik och naturvetenskap.
    Lozovik, Y.E.
    Wadeasa, A.
    Nour, Omer
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för teknik och naturvetenskap.
    Semenov, A.G.
    Vornrova, N.S.
    Light emission from different zinc oxide junctions and nanostructures2009Inngår i: Physica Status Solidi. C, Current topics in solid state physics, ISSN 1610-1634, E-ISSN 1610-1642, Physica Status Solidi A, Vol. 206, nr 5, s. 853-859Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    We will discuss our experimental results for optical spectra produced by hole-injection from different p-type organic and inorganic materials into n-type ZnO nanowires. The influence of different growth techniques and conditions on the nanowires and their emission spectral characteristics will then be analyzed and discussed. The latest findings on the mixture of the green emission band responsible for visible light emission from ZnO and the blue light emission from the organic polymer will be presented. Different high brightness light emitting diodes (HB-LEDs) from our grown ZnO nanowires are demonstrated. The p-type multi layer organic structures contain PEDOT:PSS as hole injectors combined with a hole transporting layer, and in some structures, a final top electron blocking/hole barrier stepping layer is placed. The purpose of this layer is to adjust the hole and electron emission from the corresponding junction side to optimize the LED performance. Structural scanning electron microscopy (SEM), electrical (IV characteristics), photoluminescence (PL) and electroluminescence (EL) characteristics of these devices are displayed. Theoretically, we study the superfluidity of a two-dimensional system of excitonic polaritons in an optical microcavity with an embedded quantum well. Using the effective low-energy action for thermodynamic phase fluctuations, we obtain an expression for the analogue of the superfluid density in the system in terms of the “current–current” correlation function. The Kosterlits–Thouless transition temperature to the superfluid state as a function of the controlling parameters is calculated. Two methods are considered for producing traps for a polariton system in an optical microcavity. The behaviour of a two-component Bose condensate of photons and excitons is analyzed theoretically for both types of the trap. The Bose condensate is described by the coupled system of equations of the Gross–Pitaevskii type. The approximate wave functions and the spatial profiles of coupled photon and exciton condensates are obtained.

  • 29.
    Wronskowska, A.A.
    et al.
    Inst of Mathematics and Physics University of Technology and Life Sciences, Poland.
    Arwin, Hans
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Tillämpad optik.
    Bukaluk, A.
    Inst of Mathematics and Physics, University of Technology and Life Science, Poland.
    Skowronski, L.
    Inst of Mathematics and Physics, University of Technology and Life Sciences, Poland.
    Trzcinski, M.
    Inst of Mathematics and Physics, University of Technology and Life Sciences, Poland.
    Okulewicz, K.
    Inst of Mathematics and Physics, University of Technology and Life Sciences, Poland.
    Wronkowksi, A.
    Inst of Mathematics and Physics, University of Technology and Life Sciences, Poland.
    IR-VIS-UV ellipsometry, XRD and AES investigation of In/Cu and In/Pd thin films2008Inngår i: Physica Status Solidi. C, Current topics in solid state physics, ISSN 1610-1634, E-ISSN 1610-1642, Vol. 5, nr 5, s. 1141-1144Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    Optical and compositional properties of In, In/Pd and Pd/In/Pd thin films evaporated on Cu and SiO2 substrates in vacuum were investigated by means of X-ray diffractometry, Auger electron spectroscopy and spectroscopic ellipsometry methods. Auger depth profile studies were performed in order to determine the composition of InCu and InPd structures. In both systems interdiffusion of metals was detected at room temperature. The XRD patterns indicated formation of CuIn2 and PdIn3 phases in the samples. Optical properties of the composite layers containing intermetallic phases were derived from ellipsometric quantities Ψ and Δ measured in the photon energy range 0.1-6.0 eV at different angles of incidence using suitable multilayer models for the examined samples.

  • 30. Zhuravlev, K.S.
    et al.
    Ree, D.D.
    Mansurov, V.G.
    Nikitin, A.Yu.
    Paskov, Plamen
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Materiefysik.
    Holtz, Per-Olof
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Materiefysik.
    Microphotoluminescence of GaN/AlN quantum dots grown by MBE2006Inngår i: Physica Status Solidi. C, Current topics in solid state physics, ISSN 1610-1634, E-ISSN 1610-1642, Vol. 3, s. 2048-2051Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    Presented at: The 6th International Conference on Nitride Semiconductors (ICNS6), Bremen, Germany, Aug 28-Sept 2, 2005

1 - 30 of 30
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