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  • 1.
    Ahvenniemi, Esko
    et al.
    Aalto University, Finland.
    Akbashev, Andrew R.
    Stanford University, CA 94305 USA.
    Ali, Saima
    Aalto University, Finland.
    Bechelany, Mikhael
    University of Montpellier, France.
    Berdova, Maria
    University of Twente, Netherlands.
    Boyadjiev, Stefan
    Bulgarian Academic Science, Bulgaria.
    Cameron, David C.
    Masaryk University, Czech Republic.
    Chen, Rong
    Huazhong University of Science and Technology, Peoples R China.
    Chubarov, Mikhail
    University of Grenoble Alpes, France.
    Cremers, Veronique
    University of Ghent, Belgium.
    Devi, Anjana
    Ruhr University of Bochum, Germany.
    Drozd, Viktor
    St Petersburg State University, Russia.
    Elnikova, Liliya
    Institute Theoret and Expt Phys, Russia.
    Gottardi, Gloria
    Fdn Bruno Kessler, Italy.
    Grigoras, Kestutis
    VTT Technical Research Centre Finland, Finland.
    Hausmann, Dennis M.
    Lam Research Corp, OR 97062 USA.
    Seong Hwang, Cheol
    Seoul National University, South Korea; Seoul National University, South Korea.
    Jen, Shih-Hui
    Globalfoundries, NY 12203 USA.
    Kallio, Tanja
    Aalto University, Finland.
    Kanervo, Jaana
    Aalto University, Finland; Abo Akad University, Finland.
    Khmelnitskiy, Ivan
    St Petersburg Electrotech University of LETI, Russia.
    Han Kim, Do
    MIT, MA 02139 USA.
    Klibanov, Lev
    Techinsights, Canada.
    Koshtyal, Yury
    Ioffe Institute, Russia.
    Krause, A. Outi I.
    Aalto University, Finland.
    Kuhs, Jakob
    University of Ghent, Belgium.
    Kaerkkaenen, Irina
    Sentech Instruments GmbH, Germany.
    Kaariainen, Marja-Leena
    NovaldMedical Ltd Oy, Finland.
    Kaariainen, Tommi
    NovaldMedical Ltd Oy, Finland; University of Helsinki, Finland.
    Lamagna, Luca
    STMicroelectronics, Italy.
    Lapicki, Adam A.
    Seagate Technology Ireland, North Ireland.
    Leskela, Markku
    University of Helsinki, Finland.
    Lipsanen, Harri
    Aalto University, Finland.
    Lyytinen, Jussi
    Aalto University, Finland.
    Malkov, Anatoly
    Technical University, Russia.
    Malygin, Anatoly
    Technical University, Russia.
    Mennad, Abdelkader
    CDER, Algeria.
    Militzer, Christian
    Technical University of Chemnitz, Germany.
    Molarius, Jyrki
    Summa Semicond Oy, Finland.
    Norek, Malgorzata
    Mil University of Technology, Poland.
    Ozgit-Akgun, Cagla
    ASELSAN Inc, Turkey.
    Panov, Mikhail
    St Petersburg Electrotech University of LETI, Russia.
    Pedersen, Henrik
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Kemi. Linköpings universitet, Tekniska fakulteten.
    Piallat, Fabien
    KOBUS, France.
    Popov, Georgi
    University of Helsinki, Finland.
    Puurunen, Riikka L.
    VTT Technical Research Centre Finland, Finland.
    Rampelberg, Geert
    University of Ghent, Belgium.
    Ras, Robin H. A.
    Aalto University, Espoo, Finland.
    Rauwel, Erwan
    Tallinn University of Technology, Estonia.
    Roozeboom, Fred
    Eindhoven University of Technology, Netherlands; TNO, Netherlands.
    Sajavaara, Timo
    University of Jyvaskyla, Finland.
    Salami, Hossein
    University of Maryland, MD 20742 USA.
    Savin, Hele
    Aalto University, Finland.
    Schneider, Nathanaelle
    IRDEP CNRS, France; IPVF, France.
    Seidel, Thomas E.
    Seitek50, FL 32135 USA.
    Sundqvist, Jonas
    Fraunhofer Institute Ceram Technology and Syst IKTS, Germany.
    Suyatin, Dmitry B.
    Lund University, Sweden; Lund University, Sweden.
    Torndahl, Tobias
    Uppsala University, Sweden.
    van Ommen, J. Ruud
    Delft University of Technology, Netherlands.
    Wiemer, Claudia
    CNR, Italy.
    Ylivaara, Oili M. E.
    VTT Technical Research Centre Finland, Finland.
    Yurkevich, Oksana
    Immanuel Kant Balt Federal University, Russia.
    Recommended reading list of early publications on atomic layer deposition-Outcome of the "Virtual Project on the History of ALD"2017Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, ISSN 0734-2101, E-ISSN 1520-8559, Vol. 35, nr 1, artikel-id 010801Artikel, forskningsöversikt (Refereegranskat)
    Abstract [en]

    Atomic layer deposition (ALD), a gas-phase thin film deposition technique based on repeated, self-terminating gas-solid reactions, has become the method of choice in semiconductor manufacturing and many other technological areas for depositing thin conformal inorganic material layers for various applications. ALD has been discovered and developed independently, at least twice, under different names: atomic layer epitaxy (ALE) and molecular layering. ALE, dating back to 1974 in Finland, has been commonly known as the origin of ALD, while work done since the 1960s in the Soviet Union under the name "molecular layering" (and sometimes other names) has remained much less known. The virtual project on the history of ALD (VPHA) is a volunteer-based effort with open participation, set up to make the early days of ALD more transparent. In VPHA, started in July 2013, the target is to list, read and comment on all early ALD academic and patent literature up to 1986. VPHA has resulted in two essays and several presentations at international conferences. This paper, based on a poster presentation at the 16th International Conference on Atomic Layer Deposition in Dublin, Ireland, 2016, presents a recommended reading list of early ALD publications, created collectively by the VPHA participants through voting. The list contains 22 publications from Finland, Japan, Soviet Union, United Kingdom, and United States. Up to now, a balanced overview regarding the early history of ALD has been missing; the current list is an attempt to remedy this deficiency. (C) 2016 Author(s).

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  • 2.
    Aijaz, Asim
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Plasma och beläggningsfysik. Linköpings universitet, Tekniska högskolan. Uppsala University, Sweden.
    Louring, Sascha
    Aarhus University, Denmark; Danish Technology Institute, Denmark.
    Lundin, Daniel
    University of Paris Saclay, France.
    Kubart, Tomas
    Uppsala University, Sweden.
    Jensen, Jens
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Sarakinos, Kostas
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Nanodesign. Linköpings universitet, Tekniska fakulteten.
    Helmersson, Ulf
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Plasma och beläggningsfysik. Linköpings universitet, Tekniska fakulteten.
    Synthesis of hydrogenated diamondlike carbon thin films using neon-acetylene based high power impulse magnetron sputtering discharges2016Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, ISSN 0734-2101, E-ISSN 1520-8559, Vol. 34, nr 6, artikel-id 061504Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Hydrogenated diamondlike carbon (DLC:H) thin films exhibit many interesting properties that can be tailored by controlling the composition and energy of the vapor fluxes used for their synthesis. This control can be facilitated by high electron density and/or high electron temperature plasmas that allow one to effectively tune the gas and surface chemistry during film growth, as well as the degree of ionization of the film forming species. The authors have recently demonstrated by adding Ne in an Ar-C high power impulse magnetron sputtering (HiPIMS) discharge that electron temperatures can be effectively increased to substantially ionize C species [Aijaz et al., Diamond Relat. Mater. 23, 1 (2012)]. The authors also developed an Ar-C2H2 HiPIMS process in which the high electron densities provided by the HiPIMS operation mode enhance gas phase dissociation reactions enabling control of the plasma and growth chemistry [Aijaz et al., Diamond Relat. Mater. 44, 117 (2014)]. Seeking to further enhance electron temperature and thereby promote electron impact induced interactions, control plasma chemical reaction pathways, and tune the resulting film properties, in this work, the authors synthesize DLC: H thin films by admixing Ne in a HiPIMS based Ar/C2H2 discharge. The authors investigate the plasma properties and discharge characteristics by measuring electron energy distributions as well as by studying discharge current characteristics showing an electron temperature enhancement in C2H2 based discharges and the role of ionic contribution to the film growth. These discharge conditions allow for the growth of thick (amp;gt;1 mu m) DLC: H thin films exhibiting low compressive stresses (similar to 0.5 GPa), high hardness (similar to 25 GPa), low H content (similar to 11%), and density in the order of 2.2 g/cm(3). The authors also show that film densification and change of mechanical properties are related to H removal by ion bombardment rather than subplantation. (C) 2016 American Vacuum Society.

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  • 3.
    Alami, Jones
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Plasma och beläggningsfysik. Linköpings universitet, Tekniska högskolan.
    Persson, Per O. Å.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
    Music, Denis
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
    Gudmundsson, J. T.
    University of Iceland, Reykjavik.
    Böhlmark, Johan
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Plasma och beläggningsfysik. Linköpings universitet, Tekniska högskolan.
    Helmersson, Ulf
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Plasma och beläggningsfysik. Linköpings universitet, Tekniska högskolan.
    Ion-assisted Physical Vapor Deposition for enhanced film properties on non-flat surfaces2005Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, ISSN 0734-2101, E-ISSN 1520-8559, Vol. 23, nr 2, s. 278-280Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    We have synthesized Ta thin films on Si substrates placed along a wall of a 2-cm-deep and 1-cm-wide trench, using both a mostly neutral Ta flux by conventional dc magnetron sputtering (dcMS) and a mostly ionized Ta flux by high-power pulsed magnetron sputtering (HPPMS). Structure of the grown films was evaluated by scanning electron microscopy, transmission electron microscopy, and atomic force microscopy. The Ta thin film grown by HPPMS has a smooth surface and a dense crystalline structure with grains oriented perpendicular to the substrate surface, whereas the film grown by dcMS exhibits a rough surface, pores between the grains, and an inclined columnar structure. The improved homogeneity achieved by HPPMS is a direct consequence of the high ion fraction of sputtered species.

  • 4.
    Alijan Farzad Lahiji, Faezeh
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Bairagi, Samiran
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Magnusson, Roger
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Sortica, Mauricio A.
    Uppsala Univ, Sweden.
    Primetzhofer, Daniel
    Uppsala Univ, Sweden.
    Ekström, Erik
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Paul, Biplab
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Le Febvrier, Arnaud
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Eklund, Per
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Growth and optical properties of NiO thin films deposited by pulsed dc reactive magnetron sputtering2023Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, ISSN 0734-2101, E-ISSN 1520-8559, Vol. 41, nr 6, artikel-id 063402Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    NiO thin films with varied oxygen contents are grown on Si(100) and c-Al2O3 at a substrate temperature of 300 degrees C using pulsed dc reactive magnetron sputtering. We characterize the structure and optical properties of NiO changes as functions of the oxygen content. NiO with the cubic structure, single phase, and predominant orientation along (111) is found on both substrates. X-ray diffraction and pole figure analysis further show that NiO on the Si(100) substrate exhibits fiber-textured growth, while twin domain epitaxy was achieved on c-Al2O3, with NiO(111) k Al2O3(0001) and NiO[1 (1) over bar0]k Al2O3[10 (1) over bar0] or NiO[(1) over bar 10]k Al2O3[2 (1) over bar(1) over bar0] epitaxial relationship. The oxygen content in NiO films did not have a significant effect on the refractive index, extinction coefficient, and absorption coefficient. This suggests that the optical properties of NiO films remained unaffected by changes in the oxygen content.

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  • 5.
    Alling, Björn
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
    Khatibi, Ali
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
    Simak, Sergey
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Teoretisk Fysik. Linköpings universitet, Tekniska högskolan.
    Eklund, Per
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
    Hultman, Lars
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
    Theoretical investigation of cubic B1-like and corundum (Cr1−xAlx)2O3 solid solutions2013Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, ISSN 0734-2101, E-ISSN 1520-8559, Vol. 31, nr 3Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    First-principles calculations are employed to investigate the stability and properties of cubic rock-salt-like (Cr1−xAlx)2O3 solid solutions, stabilized by metal site vacancies as recently reported experimentally. It is demonstrated that the metal site vacancies can indeed be ordered in a way that gives rise to a suitable fourfold coordination of all O atoms in the lattice. B1-like structures with ordered and disordered metal site vacancies are studied for (Cr0.5Al0.5)2O3 and found to have a cubic lattice spacing close to the values reported experimentally, in contrast to fluorite-like and perovskite structures. The obtained B1-like structures are higher in energy than corundum solid solutions for all compositions, but with an energy offset per atom similar to other metastable systems possible to synthesize with physical vapor deposition techniques. The obtained electronic structures show that the B1-like systems are semiconducting although with smaller band gaps than the corundum structure.

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  • 6.
    Almer, Jonathan
    et al.
    IKP, Konstruktionsmaterial Linköpings universitet.
    Odén, Magnus
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för konstruktions- och produktionsteknik, Konstruktionsmaterial.
    Hultman, Lars
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik.
    Håkansson, Greger
    Tixon Brukens Sverige AB Linköping.
    Microstructural evolution during tempering of arc-evaporated Cr-N coatings2000Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, ISSN 0734-2101, E-ISSN 1520-8559, Vol. 18, nr 1, s. 121-130Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Cr-N coatings were arc-deposited at 50 and 300 V. The changes in the coating microstructure and phase content during tempering were monitored. As a result, the phase stability and activation energies for defect diffusion were determined as a function of ion energy.

  • 7.
    Andersson, Jon M.
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Plasma och beläggningsfysik. Linköpings universitet, Tekniska högskolan.
    Czigány, Zs.
    Research Institute for Technical Physics and Materials Science, Budapest, Hungary.
    Jin, P.
    National Institute of Advanced Industrial Science and Technology (AIST), Nagoya 463-8560, Japan.
    Helmersson, Ulf
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Plasma och beläggningsfysik. Linköpings universitet, Tekniska högskolan.
    Microstructure of α-alumina thin films deposited at low temperatures on chromia template layers2004Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, ISSN 0734-2101, E-ISSN 1520-8559, Vol. 22, nr 1, s. 117-121Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Radio frequency sputtering has been used to deposit -alumina (-Al2O3) thin films at substrate temperatures of 280–560 °C. The films are shown to be single phased and hard. Nanoindentation gives values of 306±31 and 27±3 GPa for elastic modulus and hardness, respectively, for a substrate temperature of 280 °C. Growth of the phase was achieved by in situ predeposition of a chromia template layer. Chromia crystallizes in the same hexagonal structure as -alumina, with a lattice mismatch of 4.1% in the a- and 4.6% in the c-parameter, and is shown to nucleate readily on the amorphous substrates (silicon with a natural oxide layer). This results in local epitaxy of -alumina on the chromia layer, as is shown by transmission electron microscopy. The alumina grains are columnar with grain widths increasing from 22±7 to 41±9 nm, as the temperature increases from 280 to 560 °C. This is consistent with a surface diffusion dominated growth mode and suggests that -alumina deposition at low temperatures is possible once initial grain nucleation has occurred. Results are also presented demonstrating chromia/-alumina growth on a technological substrate (Haynes230 Ni-based super alloy, Haynes International, Inc.).

  • 8.
    Baer, Donald R.
    et al.
    Pacific Northwest Natl Lab, WA 99352 USA.
    Artyushkova, Kateryna
    Phys Elect, MN 55317 USA.
    Cohen, Hagai
    Weizmann Inst Sci, Israel.
    Easton, Christopher D.
    CSIRO Mfg, Australia.
    Engelhard, Mark
    Pacific Northwest Natl Lab, WA 99352 USA.
    Gengenbach, Thomas R.
    CSIRO Mfg, Australia.
    Greczynski, Grzegorz
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Mack, Paul
    Thermo Fisher Sci, England.
    Morgan, David J.
    Cardiff Univ, Wales.
    Roberts, Adam
    Kratos Analyt Ltd, England.
    XPS guide: Charge neutralization and binding energy referencing for insulating samples2020Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, ISSN 0734-2101, E-ISSN 1520-8559, Vol. 38, nr 3Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    This guide deals with methods to control surface charging during XPS analysis of insulating samples and approaches to extracting useful binding energy information. The guide summarizes the causes of surface charging, how to recognize when it occurs, approaches to minimize charge buildup, and methods used to adjust or correct XPS photoelectron binding energies when charge control systems are used. There are multiple ways to control surface charge buildup during XPS measurements, and examples of systems on advanced XPS instruments are described. There is no single, simple, and foolproof way to extract binding energies on insulating material, but advantages and limitations of several approaches are described. Because of the variety of approaches and limitations of each, it is critical for researchers to accurately describe the procedures that have been applied in research reports and publications.

  • 9.
    Bakhit, Babak
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten. Univ Cambridge, England; Univ Cambridge, England.
    Oxidation properties of quaternary Zr-based diboride thin films grown by hybrid high-power impulse/DC magnetron co-sputtering2024Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, ISSN 0734-2101, E-ISSN 1520-8559, Vol. 42, nr 1, artikel-id 010401Artikel i tidskrift (Övrigt vetenskapligt)
    Abstract [en]

    Sputter-deposited transition metal diborides are subject of increasing attention for protective hard coatings. However, they suffer from high brittleness and rapid oxidation. Alloying with Ta increases their toughness, but their oxidation resistance requires further enhancement. Here, the influence of adding Si on the microstructure, mechanical, and oxidation properties of quaternary Zr1-(x + y)TaxSiyBz thin films grown by hybrid high-power impulse/DC magnetron co-sputtering (ZrB2-DCMS/Ta-HiPIMS/Si-DCMS) is studied. The layers are deposited at two different conditions of Ta-target HiPIMS powers and frequencies (30 W/100 Hz and 60 W/200 Hz series) with Si-target DCMS powers P-Si = 0, 10, 15, and 20 W, while the ZrB2-target DCMS power is maintained constant at 200 W. For the 30 W/100 Hz series, x decreases from 0.20 to 0.15, y increases from 0 to 0.22, and z decreases from 2.0 to 1.8 by increasing P-Si. The Ta/metal ratio remains constant at x = 0.3 for the 60 W/200 Hz series, while y increases from 0 to 0.1, and z decreases from 1.7 to 1.4. All layers show columnar growth and crystallize in a hexagonal-diboride structure, but crystal orientations change by increasing P-Si. The 60 W/200 Hz series have much denser microstructure than the 30 W/100 Hz series. The 60 W/200 Hz series have high hardness values (>= 35 GPa), while the hardness of the 30 W/100 Hz series significantly decreases from similar to 37 to similar to 21 GPa as a function of P-Si. Zr0.7Ta0.3B1.7 has markedly better high-temperature oxidation resistance than Zr0.8Ta0.2B2.0 due to the formation of protective B-containing oxide scales. Alloying with Si considerably decreases the oxidation rate of the 30 W/100 Hz series owing to the formation of oxide scales containing a ZrSiO4 phase with a thin Si oxide top layer; however, the oxidation rate increases for the 60 W/200 Hz series as these quaternary alloys do not contain sufficiently high B and Si to form oxidation protective barriers.

  • 10.
    Bakhit, Babak
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Engberg, David
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Lu, Jun
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Rosén, Johanna
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Högberg, Hans
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Hultman, Lars
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Petrov, Ivan
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten. Univ Illinois, IL 61801 USA.
    Greene, Joseph E
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten. Univ Illinois, IL 61801 USA.
    Greczynski, Grzegorz
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Strategy for simultaneously increasing both hardness and toughness in ZrB2-rich Zr1-xTaxBy thin films2019Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, ISSN 0734-2101, E-ISSN 1520-8559, Vol. 37, nr 3, artikel-id 031506Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Refractory transition-metal diborides exhibit inherent hardness. However, this is not always sufficient to prevent failure in applications involving high mechanical and thermal stress, since hardness is typically accompanied by brittleness leading to crack formation and propagation. Toughness, the combination of hardness and ductility, is required to avoid brittle fracture. Here, the authors demonstrate a strategy for simultaneously enhancing both hardness and ductility of ZrB2-rich thin films grown in pure Ar on Al2O3(0001) and Si(001) substrates at 475 degrees C. ZrB2.4 layers are deposited by dc magnetron sputtering (DCMS) from a ZrB2 target, while Zr1-xTaxBy alloy films are grown, thus varying the B/metal ratio as a function of x, by adding pulsed high-power impulse magnetron sputtering (HiPIMS) from a Ta target to deposit Zr1-xTaxBy alloy films using hybrid Ta-HiPIMS/ZrB2-DCMS sputtering with a substrate bias synchronized to the metal-rich portion of each HiPIMS pulse. The average power P-Ta (and pulse frequency) applied to the HiPIMS Ta target is varied from 0 to 1800W (0 to 300 Hz) in increments of 600W (100 Hz). The resulting boron-to-metal ratio, y = B/(Zr+Ta), in as-deposited Zr1-xTaxBy films decreases from 2.4 to 1.5 as P-Ta is increased from 0 to 1800W, while x increases from 0 to 0.3. A combination of x-ray diffraction (XRD), glancing-angle XRD, transmission electron microscopy (TEM), analytical Z-contrast scanning TEM, electron energy-loss spectroscopy, energy-dispersive x-ray spectroscopy, x-ray photoelectron spectroscopy, and atom-probe tomography reveals that all films have the hexagonal AlB2 crystal structure with a columnar nanostructure, in which the column boundaries of layers with 0 amp;lt;= x amp;lt; 0.2 are B-rich, whereas those with x amp;gt;= 0.2 are Ta-rich. The nanostructural transition, combined with changes in average column widths, results in an similar to 20% increase in hardness, from 35 to 42 GPa, with a simultaneous increase of similar to 30% in nanoindentation toughness, from 4.0 to 5.2MPa root m. Published by the AVS.

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  • 11.
    Bakhit, Babak
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Petrov, Ivan
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten. Univ Illinois, IL 61801 USA; Univ Illinois, IL 61801 USA.
    Greene, Joseph E
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten. Univ Illinois, IL 61801 USA; Univ Illinois, IL 61801 USA.
    Hultman, Lars
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Rosén, Johanna
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Greczynski, Grzegorz
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Controlling the B/Ti ratio of TiBx thin films grown by high-power impulse magnetron sputtering2018Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, ISSN 0734-2101, E-ISSN 1520-8559, Vol. 36, nr 3, artikel-id 030604Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    TiBx thin films grown from compound TiB2 targets by magnetron sputter deposition are typically highly over-stoichiometric, with x ranging from 3.5 to 2.4, due to differences in Ti and B preferential-ejection angles and gas-phase scattering during transport from the target to the substrate. Here, the authors demonstrate that stoichiometric TiB2 films can be obtained using highpower impulse magnetron sputtering (HiPIMS) operated in power-controlled mode. The B/Ti ratio x of films sputter-deposited in Ar is controllably varied from 2.08 to 1.83 by adjusting the length of HiPIMS pulses t(on) between 100 and 30 mu s, while maintaining average power and pulse frequency constant. This results in peak current densities J(T), peak ranging from 0.27 to 0.88 A/cm(2). Energy- and time-resolved mass spectrometry analyses of the ion fluxes incident at the substrate position show that the density of metal ions increases with decreasing t(on) due to a dramatic increase in J(T, peak) resulting in the strong gas rarefaction. With t(on)amp;lt;60 mu s (J(T),(peak)amp;gt; 0.4 A/cm(2)), film growth is increasingly controlled by ions incident at the substrate, rather than neutrals, as a result of the higher plasma dencity and, hence, electron-impact ionization probablity. Thus, since sputter- ejected Ti atoms have a higher probability of being ionized than B atoms, due to their lower first-ionization potential and larger ionization cross-section, the Ti concentration in as-deposited films increases with decreasing ton (increasing J(T,peak)) as ionized sputtered species are steered to the substrate by the plasma in order to maintain charge neutrality. Published by the AVS.

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  • 12.
    Bakhit, Babak
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Primetzhofer, Daniel
    Uppsala University, Sweden.
    Pitthan, Eduardo
    Uppsala University, Sweden.
    Sortica, Mauricio A.
    Uppsala University, Sweden.
    Ntemou, Eleni
    Uppsala University, Sweden.
    Rosén, Johanna
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Hultman, Lars
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Petrov, Ivan
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten. University of Illinois, USA; National Taiwan University of Science and Technology, Taiwan.
    Greczynski, Grzegorz
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Systematic compositional analysis of sputter-deposited boron-containing thin films2021Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, ISSN 0734-2101, E-ISSN 1520-8559, Vol. 39, nr 6, artikel-id 063408Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Boron-containing materials exhibit a unique combination of ceramic and metallic properties that are sensitively dependent on their given chemical bonding and elemental compositions. However, determining the composition, let alone bonding, with sufficient accuracy is cumbersome with respect to boron, being a light element that bonds in various coordinations. Here, we report on the comprehensive compositional analysis of transition-metal diboride (TMBx) thin films (TM = Ti, Zr, and Hf) by energy-dispersive x-ray spectroscopy (EDX), x-ray photoelectron spectroscopy (XPS), time-of-flight elastic recoil detection analysis (ToF-ERDA), Rutherford backscattering spectrometry (RBS), and nuclear reaction analysis (NRA). The films are grown on Si and C substrates by dc magnetron sputtering from stoichiometric TMB2 targets and have hexagonal AlB2-type columnar structures. EDX considerably overestimates B/TM ratios, x, compared to the other techniques, particularly for ZrBx. The B concentrations obtained by XPS strongly depend on the energy of Ar+ ions used for removing surface oxides and contaminants prior to analyses and are more reliable for 0.5 keV Ar+. ToF-ERDA, RBS, and NRA yield consistent compositions in TiBx. They also prove TiBx and ZrBx films to be homogeneous with comparable B/TM ratios for each film. However, ToF-ERDA, employing a 36-MeV 127I8+ beam, exhibits challenges in depth resolution and quantification of HfBx due to plural and multiple scattering and associated energy loss straggling effects. Compared to ToF-ERDA, RBS (for the film grown on C substrates) and NRA provide more reliable B/Hf ratios. Overall, a combination of methods is recommended for accurately pinpointing the compositions of borides that contain heavy transition metals.

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  • 13.
    Bakoglidis, Konstantinos D.
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Schmidt, Susann
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Garbrecht, Magnus
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Ivanov, Ivan G.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska fakulteten.
    Jensen, Jens
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Greczynski, Grzegorz
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Hultman, Lars
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Low-temperature growth of low friction wear-resistant amorphous carbon nitride thin films by mid-frequency, high power impulse, and direct current magnetron sputtering2015Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, ISSN 0734-2101, E-ISSN 1520-8559, Vol. 33, nr 5, artikel-id 05E112Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Amorphous carbon nitride (a-CNx) thin films were deposited on steel AISI52100 and Si(001) substrates using mid-frequency magnetron sputtering (MFMS) with an MF bias voltage, high power impulse magnetron sputtering (HiPIMS) with a synchronized HiPIMS bias voltage, and direct current magnetron sputtering (DCMS) with a DC bias voltage. The films were deposited at a low substrate temperature of 150 °C and a N2/Ar flow ratio of 0.16 at the total pressure of 400 mPa. The negative bias voltage (Vs) was varied from 20 V to 120 V in each of the three deposition modes. The microstructure of the films was characterized by high-resolution transmission electron microscopy (HRTEM) and selected area electron diffraction (SAED), while the film morphology was investigated by scanning electron microscopy (SEM). All films possessed amorphous microstructure with clearly developed columns extending throughout the entire film thickness. Layers grown with the lowest substrate bias of 20 V exhibited pronounced intercolumnar porosity, independent of the technique used. Voids closed and dense films formed at Vs ≥ 60 V, Vs ≥ 100 V and Vs = 120 V for MFMS, DCMS and HiPIMS, respectively. X-ray photoelectron spectroscopy (XPS) revealed that the nitrogen-to-carbon ratio, N/C, of the films ranged between 0.2 and 0.24. Elastic recoil detection analysis (ERDA) showed that Ar content varied between 0 and 0.8 at% and increases as a function of Vs for all deposition techniques. All films exhibited compressive residual stress, σ, which depends on the growth method; HiPIMS produces the least stressed films with stress between – 0.4 and – 1.2 GPa for all Vs values, while for CNx films deposited by MFMS σ = – 4.2 GPa. Nanoindentation showed a significant increase in film hardness and reduced elastic modulus with increasing Vs for all techniques. The harder films were produced by MFMS with hardness as high as 25 GPa. Low friction coefficients, between 0.05 and 0.06, were recorded for all films. Furthermore, CNx films produced by MFMS and DCMS at Vs = 100 V and 120 V presented a high wear resistance with wear coefficients of k ≤ 2.3 x 10-5 mm3/Nm.

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  • 14.
    Bock, Florian
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Teoretisk Fysik. Linköpings universitet, Tekniska fakulteten.
    Tasnadi, Ferenc
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Teoretisk Fysik. Linköpings universitet, Tekniska fakulteten.
    Abrikosov, Igor
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Teoretisk Fysik. Linköpings universitet, Tekniska fakulteten.
    Active learning with moment tensor potentials to predict material properties: Ti0.5Al0.5N at elevated temperature2024Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, ISSN 0734-2101, E-ISSN 1520-8559, Vol. 42, nr 1, artikel-id 013412Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Transition metal nitride alloys possess exceptional properties, making them suitable for cutting applications due to their inherent hardness or as protective coatings due to corrosion resistance. However, the computational demands associated with predicting these properties using ab initio methods can often be prohibitively high at the conditions of their operation at cutting tools, that is, at high temperatures and stresses. Machine learning approaches have been introduced into the field of materials modeling to address the challenge. In this paper, we present an active learning workflow to model the properties of our benchmark alloy system cubic B1 Ti0.5Al0.5N at temperatures up to 1500 K. With a minimal requirement of prior knowledge about the alloy system for our workflow, we train a moment tensor potential (MTP) to accurately model the material's behavior over the entire temperature range and extract elastic and vibrational properties. The outstanding accuracy of MTPs with relatively little training data demonstrates that the presented approach is highly efficient and requires about two orders of magnitude less computational resources than state-of-the-art ab initio molecular dynamics.

  • 15.
    Brenning, Nils
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Plasma och ytbeläggningsfysik. Linköpings universitet, Tekniska fakulteten. Univ Paris Saclay, France; KTH Royal Inst Technol, Sweden.
    Butler, Alexandre
    Univ Paris Saclay, France.
    Hajihoseini, Hamidreza
    Univ Iceland, Iceland.
    Rudolph, Martin
    Leibniz Inst Surface Engn IOM, Germany.
    Raadu, Michael A.
    KTH Royal Inst Technol, Sweden.
    Gudmundsson, Jon Tomas
    KTH Royal Inst Technol, Sweden; Univ Iceland, Iceland.
    Minea, Tiberiu
    Univ Paris Saclay, France.
    Lundin, Daniel
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Plasma och ytbeläggningsfysik. Linköpings universitet, Tekniska fakulteten. Univ Paris Saclay, France.
    Optimization of HiPIMS discharges: The selection of pulse power, pulse length, gas pressure, and magnetic field strength2020Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, ISSN 0734-2101, E-ISSN 1520-8559, Vol. 38, nr 3, artikel-id 033008Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    In high power impulse magnetron sputtering (HiPIMS) operation, there are basically two goals: a high ionized flux fraction of the sputtered target material and a high deposition rate. In this work, it is demonstrated that the former always comes at the cost of the latter. This makes a choice necessary, referred to as the HiPIMS compromise. It is here proposed that this compromise is most easily made by varying the discharge current amplitude, which opens up for optimization of additionally four external process parameters: the pulse length, the working gas pressure, the magnetic field strength, and the degree of magnetic unbalance to achieve the optimum combination of the ionized flux fraction and the deposition rate. As a figure of merit, useful for comparing different discharges, ( 1 - beta t ) is identified, which is the fraction of ionized sputtered material that escapes back-attraction toward the cathode target. It is shown that a discharge with a higher value of ( 1 - beta t ) always can be arranged to give better combinations of ionization and deposition rate than a discharge with a lower ( 1 - beta t ). Maximization of ( 1 - beta t ) is carried out empirically, based on data from two discharges with Ti targets in Ar working gas. These discharges were first modeled in order to convert measured plasma parameters to values of ( 1 - beta t ). The combined effects of varying the different process parameters were then analyzed using a process flow chart model. The effect of varying the degree of unbalance in the studied range was small. For the remaining three parameters, it is found that optimum is achieved by minimizing the magnetic field strength, minimizing the working gas pressure, and minimizing the pulse length as far as compatible with the requirement to ignite and maintain a stable discharge.

  • 16.
    Broitman, E.
    et al.
    Department of Applied Science, College of William and Mary, Williamsburg, VA 23187-8795, United States.
    Hellgren, N.
    Frederick Seitz Materials Res. Lab., University of Illinois, Urbana, IL 61801, United States.
    Czigany, Zs.
    Twesten, R.D.
    Frederick Seitz Materials Res. Lab., University of Illinois, Urbana, IL 61801, United States.
    Luning, J.
    Stanford Synchrotron Radiation Lab., Stanford, CA 94309, United States.
    Petrov, I.
    Frederick Seitz Materials Res. Lab., University of Illinois, Urbana, IL 61801, United States.
    Hultman, Lars
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik.
    Holloway, B.C.
    Department of Applied Science, College of William and Mary, Williamsburg, VA 23187-8795, United States.
    Structural and mechanical properties of diamond-like carbon films deposited by direct current magnetron sputtering2003Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, ISSN 0734-2101, E-ISSN 1520-8559, Vol. 21, nr 4, s. 851-859Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    A systematic study of physical properties of sputter-deposited DLC films was performed as a function of flux ratio and ion energy. The energy and flux ions and neutral atoms impinging on the surface of the growing films were deduced from Langmuir probe measurements and theoretical calculations. The bombardment of growing films by the energetic particles led to changes in microstructure and mechanical properties. Results suggest that the presence of defective graphite formed by subplanted C and Ar atoms is the dominant influence on the mechanical properties of the DLC films.

  • 17.
    Broitman, Esteban
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Flores-Ruiz, Francisco
    Centro de Investigacion y de Estudios Avanzados del I.P.N., Unidad Queretaro.
    Novel method for in-situ and simultaneous nanofriction and nanowear characterization of materials2015Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, ISSN 0734-2101, E-ISSN 1520-8559, Vol. 34, artikel-id 043201Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Nowadays, there is an increased need to know the nanotribological properties of protectivecoatings used in part devices operating under nano- and microcontact situations, e.g., hard diskdrives, magnetic heads, microelectromechanical systems and microsensors, etc. Therefore, there isa demand for instruments and methods testing friction and wear at the nano- and microscales. Inthis work, the authors present a new methodology to measure simultaneously the friction, and wearof a surface. The authors have designed an experiment, where a probe is permanently scanning a10 lm track in a reciprocal movement. Different loads are applied in order to obtain thetopographic information which is used to calculate the wear rate and roughness evolution. Forcelateral sensors register simultaneously the friction force variations. The experimental input data areinformation vectors that contain: load (lN), friction force (lN), vertical Z displacement (nm),lateral X displacement (nm), and time (s). The data are processed using a simple program runningin MathLabVR which eliminates the thermal drift. The software output gives the resulting frictioncoefficient, track roughness, and wear rate as a function of the running cycles of the probe. Thenew method builds a novel bridge to relate tribological mechanisms at different scales

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  • 18.
    Broitman, Esteban
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Flores-Ruiz, Francisco J.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten. IPN, Mexico.
    Di Giulio, Massimo
    University of Salento, Italy.
    Gontad, Francisco
    University of Salento, Italy; Ist Nazl Fis Nucl, Italy.
    Lorusso, Antonella
    University of Salento, Italy; Ist Nazl Fis Nucl, Italy.
    Perrone, Alessio
    University of Salento, Italy; Ist Nazl Fis Nucl, Italy.
    Microstructural, nanomechanical, and microtribological properties of Pb thin films prepared by pulsed laser deposition and thermal evaporation techniques2016Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, ISSN 0734-2101, E-ISSN 1520-8559, Vol. 34, nr 2, s. 021505-Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    In this work, the authors compare the morphological, structural, nanomechanical, and microtribological properties of Pb films deposited by thermal evaporation (TE) and pulsed laser deposition (PLD) techniques onto Si (111) substrates. Films were investigated by scanning electron microscopy, surface probe microscopy, and x-ray diffraction in theta-2 theta geometry to determine their morphology, root-mean-square (RMS) roughness, and microstructure, respectively. TE films showed a percolated morphology with densely packed fibrous grains while PLD films had a granular morphology with a columnar and tightly packed structure in accordance with the zone growth model of Thornton. Moreover, PLD films presented a more polycrystalline structure with respect to TE films, with RMS roughness of 14 and 10 nm, respectively. Hardness and elastic modulus vary from 2.1 to 0.8 GPa and from 14 to 10 GPa for PLD and TE films, respectively. A reciprocal friction test has shown that PLD films have lower friction coefficient and wear rate than TE films. Our study has demonstrated for first time that, at the microscale, Pb films do not show the same simple lubricious properties measured at the macroscale. (C) 2015 American Vacuum Society.

  • 19.
    Broitman, Esteban
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi. Linköpings universitet, Tekniska fakulteten. SKF Res and Dev Ctr, Netherlands.
    Lorusso, Antonella
    Univ Salento, Italy; Ist Nazl Fis Nucl, Italy.
    Perrone, Alessio
    Univ Salento, Italy; Ist Nazl Fis Nucl, Italy.
    Karoutsos, Vagelis
    Univ Patras, Greece.
    Vainos, Nikolaos A.
    Univ Patras, Greece.
    Gontad, Francisco
    Univ Salento, Italy; Ist Nazl Fis Nucl, Italy.
    Nanomechanical and microtribological properties of yttrium thin films for photocathode engineering2019Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, ISSN 0734-2101, E-ISSN 1520-8559, Vol. 37, nr 3, artikel-id 031507Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    The authors study the nanomechanical and microtribological properties of yttrium (Y) thin films deposited by pulsed laser deposition on Cu polycrystalline substrates. Nanoindentation tests reveal that such films have a high hardness of H = 2.3 GPa and a reduced elastic modulus of 71.7 GPa with respect to the Cu substrates. The friction coefficient between a diamond tip and the Y film reaches a steady state value of mu similar to 0.34, lower than that for the Cu (mu similar to 0.38). Moreover, nano-scratch experiments show that Y films are more scratch-resistant than the Cu substrates, probably due to their greater hardness, higher elastic recovery, and lower friction coefficient. Their results confirm that the mechanical and tribological properties of the Y films are suitable for designing and fabricating scratch-resistant hybrid photocathodes and can reduce instabilities and unwanted discharges in the cavity of the radio-frequency gun. Furthermore, the low surface roughness and the low work function of the material are important characteristics for a photocathode based on the Y thin film for the production of high-brightness electron beams. Published by the AVS.

  • 20.
    Buttera, Sydney C.
    et al.
    Carleton University, Canada.
    Ronnby, Karl
    Linköpings universitet, Tekniska fakulteten. Linköpings universitet, Institutionen för fysik, kemi och biologi, Kemi.
    Pedersen, Henrik
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Kemi. Linköpings universitet, Tekniska fakulteten.
    Ojamäe, Lars
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Kemi. Linköpings universitet, Tekniska fakulteten.
    Barry, Sean T.
    Carleton University, Canada.
    Thermal study of an indium trisguanidinate as a possible indium nitride precursor2018Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, ISSN 0734-2101, E-ISSN 1520-8559, Vol. 36, nr 1, artikel-id 01A101Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Tris-N,N,-dimethyl-N,N -diisopropylguanidinatoindium(III) has been investigated both as a chemical vapor deposition precursor and an atomic layer deposition precursor. Although deposition was satisfactory in both cases, each report showed some anomalies in the thermal stability of this compound, warrenting further investigation, which is reported herein. The compound was found to decompose to produce diisopropylcarbodiimide both by computational modeling and solution phase nuclear magnetic resonance characterization. The decomposition was shown to have an onset at approximately 120 degrees C and had a constant rate of decomposition from 150 to 180 degrees C. The ultimate decomposition product was suspected to be bisdimethylamidoN, N,-dimethyl-N,N -diisopropylguanidinato-indium(III), which appeared to be an intractable, nonvolatile polymer. Published by the AVS.

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  • 21.
    Böhlmark, Johan
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Plasma och beläggningsfysik. Linköpings universitet, Tekniska högskolan.
    Alami, Jones
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Plasma och beläggningsfysik. Linköpings universitet, Tekniska högskolan.
    Christou, Chris
    Diamond Light Source, Rutherford Appleton Laboratory, Chilton, United Kingdom.
    Ehiasarian, Arutiun P.
    Materials Research Institute, Sheffield Hallam University, United Kingdom.
    Helmersson, Ulf
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Plasma och beläggningsfysik. Linköpings universitet, Tekniska högskolan.
    Ionization of sputtered metals in high power pulsed magnetron sputtering2005Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, ISSN 0734-2101, E-ISSN 1520-8559, Vol. 23, nr 1, s. 18-22Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    The ion to neutral ratio of the sputtered material have been studied for high power pulsed magnetron sputtering and compared with a continuous direct current (dc) discharge using the same experimental setup except for the power source. Optical emission spectroscopy (OES) was used to study the optical emission from the plasma through a side window. The emission was shown to be dominated by emission from metal ions. The distribution of metal ionized states clearly differed from the distribution of excited states, and we suggest the presence of a hot dense plasma surrounded by a cooler plasma. Sputtered material was ionized close to the target and transported into a cooler plasma region where the emission was also recorded. Assuming a Maxwell–Boltzmann distribution of excited states the emission from the plasma was quantified. This showed that the ionic contribution to the recorded spectrum was over 90% for high pulse powers. Even at relatively low applied pulse powers, the recorded spectra were dominated by emission from ions. OES analysis of the discharge in a continuous dc magnetron discharge was also made, which demonstrated much lower ionization.

  • 22.
    Choolakkal, Arun Haridas
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Högberg, Hans
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Birch, Jens
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Pedersen, Henrik
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Kemi. Linköpings universitet, Tekniska fakulteten.
    Conformal chemical vapor deposition of boron-rich boron carbide thin films from triethylboron2023Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, ISSN 0734-2101, E-ISSN 1520-8559, Vol. 41, nr 1, artikel-id 013401Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    We report conformal chemical vapor deposition (CVD) of boron carbide (BxC) thin films on silicon substrates with 8:1 aspect-ratio morphologies, using triethylboron [B(C2H5)(3)] as a single source CVD precursor. Step coverage (SC) calculated from the cross-sectional scanning electron microscopy measurements shows that films deposited at & LE;450 & DEG;C were highly conformal (SC = 1). We attribute this to the low reaction probability at low substrate temperatures enabling more gas phase diffusion into the features. The chemical state of the material, determined by x-ray photoelectron spectroscopy, shows as a carbide with B-B, B-C, C-B, and C-C chemical bonds. Quantitative analysis by time-of-flight elastic recoil detection analysis reveals that films deposited at 450 & DEG;C are boron-rich with around 82.5 at. % B, 15.6 at. % C, 1.3 at. % O, and 0.6 at. % H, i.e., about B5C. The film density as measured by x-ray reflectometry varies from 1.9 to 2.28 g/cm(3) depending on deposition temperature. (C) 2022 Author(s).All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY)license (http://creativecommons.org/licenses/by/4.0/).

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  • 23.
    Chubarov, Mikhail
    et al.
    Linköpings universitet, Tekniska fakulteten. Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik.
    Högberg, Hans
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Henry, Anne
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Pedersen, Henrik
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Kemi. Linköpings universitet, Tekniska fakulteten.
    Challenge in determining the crystal structure of epitaxial 0001 oriented sp(2)-BN films2018Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, ISSN 0734-2101, E-ISSN 1520-8559, Vol. 36, nr 3, artikel-id 030801Artikel, forskningsöversikt (Refereegranskat)
    Abstract [en]

    Boron nitride (BN) as a thin film is promising for many future electronic applications. On 0001 alpha-Al2O3 and 0001 4H/6H-SiC substrates, chemical vapor deposition yields epitaxial sp(2)-hybridized BN (sp(2)-BN) films oriented around the c-axis. Here, the authors seek to point out that sp(2)-BN can form two different polytypes; hexagonal BN (h-BN) and rhombohedral BN (r-BN), only differing in the stacking of the basal planes but with the identical distance between the basal planes and in-plane lattice parameters. This makes structural identification challenging in c- axis oriented films. The authors suggest the use of a combination of high-resolution electron microscopy with careful sample preparation and thin film x-ray diffraction techniques like pole figure measurements and glancing incidence (in-plane) diffraction to fully distinguish h-BN from r-BN. (C) 2018 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license.

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  • 24.
    Chubarov, Mikhail
    et al.
    Linköpings universitet, Tekniska fakulteten. Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik.
    Pedersen, Henrik
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Kemi. Linköpings universitet, Tekniska fakulteten.
    Högberg, Hans
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Henry, Anne
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Czigany, Zsolt
    Hungarian Academic Science, Hungary.
    Initial stages of growth and the influence of temperature during chemical vapor deposition of sp(2)-BN films2015Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, ISSN 0734-2101, E-ISSN 1520-8559, Vol. 33, nr 6, s. 061520-Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Knowledge of the structural evolution of thin films, starting by the initial stages of growth, is important to control the quality and properties of the film. The authors present a study on the initial stages of growth and the temperature influence on the structural evolution of sp(2) hybridized boron nitride (BN) thin films during chemical vapor deposition (CVD) with triethyl boron and ammonia as precursors. Nucleation of hexagonal BN (h-BN) occurs at 1200 degrees C on alpha-Al2O3 with an AlN buffer layer (AlN/alpha-Al2O3). At 1500 degrees C, h-BN grows with a layer-by-layer growth mode on AlN/alpha-Al2O3 up to similar to 4 nm after which the film structure changes to rhombohedral BN (r-BN). Then, r-BN growth proceeds with a mixed layer-by-layer and island growth mode. h-BN does not grow on 6H-SiC substrates; instead, r-BN nucleates and grows directly with a mixed layer-by-layer and island growth mode. These differences may be caused by differences in substrate surface temperature due to different thermal conductivities of the substrate materials. These results add to the understanding of the growth process of sp(2)-BN employing CVD. (C) 2015 American Vacuum Society.

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  • 25.
    Chun, JS
    et al.
    Univ Illinois, Dept Mat Sci, Urbana, IL 61801 USA Univ Illinois, Frederick Seitz Mat Res Lab, Urbana, IL 61801 USA IBM Corp, Thomas J Watson Res Ctr, Yorktown Heights, NY 10598 USA Linkoping Univ, Dept Phys, Div Thin Film, S-58183 Linkoping, Sweden.
    Carlsson, JRA
    Desjardins, P
    Univ Illinois, Dept Mat Sci, Urbana, IL 61801 USA Univ Illinois, Frederick Seitz Mat Res Lab, Urbana, IL 61801 USA IBM Corp, Thomas J Watson Res Ctr, Yorktown Heights, NY 10598 USA Linkoping Univ, Dept Phys, Div Thin Film, S-58183 Linkoping, Sweden.
    Bergstrom, DB
    Petrov, I
    Univ Illinois, Dept Mat Sci, Urbana, IL 61801 USA Univ Illinois, Frederick Seitz Mat Res Lab, Urbana, IL 61801 USA IBM Corp, Thomas J Watson Res Ctr, Yorktown Heights, NY 10598 USA Linkoping Univ, Dept Phys, Div Thin Film, S-58183 Linkoping, Sweden.
    Greene, JE
    Univ Illinois, Dept Mat Sci, Urbana, IL 61801 USA Univ Illinois, Frederick Seitz Mat Res Lab, Urbana, IL 61801 USA IBM Corp, Thomas J Watson Res Ctr, Yorktown Heights, NY 10598 USA Linkoping Univ, Dept Phys, Div Thin Film, S-58183 Linkoping, Sweden.
    Lavoie, C
    Univ Illinois, Dept Mat Sci, Urbana, IL 61801 USA Univ Illinois, Frederick Seitz Mat Res Lab, Urbana, IL 61801 USA IBM Corp, Thomas J Watson Res Ctr, Yorktown Heights, NY 10598 USA Linkoping Univ, Dept Phys, Div Thin Film, S-58183 Linkoping, Sweden.
    Cabral, C
    Univ Illinois, Dept Mat Sci, Urbana, IL 61801 USA Univ Illinois, Frederick Seitz Mat Res Lab, Urbana, IL 61801 USA IBM Corp, Thomas J Watson Res Ctr, Yorktown Heights, NY 10598 USA Linkoping Univ, Dept Phys, Div Thin Film, S-58183 Linkoping, Sweden.
    Hultman, Lars
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik.
    Synchrotron x-ray diffraction and transmission electron microscopy studies of interfacial reaction paths and kinetics during annealing of fully-002-textured Al/TiN bilayers2001Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, ISSN 0734-2101, E-ISSN 1520-8559, Vol. 19, nr 1, s. 182-191Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Dense fully-002-textured polycrystalline TiN layers, 110 nm thick with a N/TI ratio of 1.02+/-0.03, were grown on SiO2 by ultrahigh vacuum magnetically unbalanced magnetron sputter deposition at T-s = 450 degreesC in pure N-2 utilizing high N-2(+)/Ti Aux ratios and low energy (E-N2(+) = 20 eV) ion irradiation of the growing film. Al overlayers, 160 nm thick and possessing a strong 002 texture inherited from the underlying TiN, were then deposited at T-s = 100 degreesC without breaking vacuum. Synchrotron x-ray diffraction was used to follow interfacial reaction paths and kinetics during postdeposition annealing as a function of time (t(a) = 200 - 1200 s) and temperature (T-a = 500 - 580 degreesC). Changes in bilayer microstructure and microchemistry were investigated using transmission electron microscopy (TEM) and scanning TEM to obtain compositional maps of cross-sectional and plan-view specimens by energy dispersive x-ray analysis. The initial bilayer reaction step during annealing involves the formation of a continuous AIN interfacial layer which, due to local epitaxy with the TIN underlayer, grows with the metastable zinc-blende structure up to a thickness x similar or equal to3-5 nm, and with the wurtzite structure thereafter. Ti atoms released during AIN formation diffuse into the Al layer leading to supersaturation followed by the nucleation of dispersed regions of tetragonal Al3Ti with inherited 002 preferred orientation. The aluminide domains grow rapidly until they reach the free surface, thereafter growth is two dimensional as Al3Ti grains spread radially. The overall activation energy for Al3Ti formation and growth is 1.8+/-0.1 eV. In situ synchrotron x-ray diffraction analyses during thermal ramping show that the onset temperature for interfacial reactions was increased by more than 100 degreesC for fully dense completely 002-textured bilayers compared to Ill-textured bilayers deposited by conventional reactive sputter deposition. (C) 2001 American Vacuum Society.

  • 26.
    Deminskyi, Petro
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Kemi. Linköpings universitet, Tekniska fakulteten.
    Hsu, Chih-Wei
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska fakulteten.
    Bakhit, Babak
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Rouf, Polla
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Kemi. Linköpings universitet, Tekniska fakulteten.
    Pedersen, Henrik
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Kemi. Linköpings universitet, Tekniska fakulteten.
    Surface ligand removal in atomic layer deposition of GaN using triethylgallium2021Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, ISSN 0734-2101, E-ISSN 1520-8559, Vol. 39, nr 1, artikel-id 012411Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Gallium nitride (GaN) is one of the most important semiconductor materials in modern electronics. While GaN films are routinely deposited by chemical vapor deposition at around 1000 degrees C, low-temperature routes for GaN deposition need to be better understood. Herein, we present an atomic layer deposition (ALD) process for GaN-based on triethyl gallium (TEG) and ammonia plasma and show that the process can be improved by adding a reactive pulse, a "B-pulse" between the TEG and ammonia plasma, making it an ABC-type pulsed process. We show that the material quality of the deposited GaN is not affected by the B-pulse, but that the film growth per ALD cycle increases when a B-pulse is added. We suggest that this can be explained by the removal of ethyl ligands from the surface by the B-pulse, enabling a more efficient nitridation by the ammonia plasma. We show that the B-pulsing can be used to enable GaN deposition with a thermal ammonia pulse, albeit of x-ray amorphous films.

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  • 27.
    Deminskyi, Petro
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Kemi. Linköpings universitet, Tekniska fakulteten.
    Rouf, Polla
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Kemi. Linköpings universitet, Tekniska fakulteten.
    Ivanov, Ivan Gueorguiev
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska fakulteten.
    Pedersen, Henrik
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Kemi. Linköpings universitet, Tekniska fakulteten.
    Atomic layer deposition of InN using trimethylindium and ammonia plasma2019Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, ISSN 0734-2101, E-ISSN 1520-8559, Vol. 37, nr 2, artikel-id 020926Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Indium nitride (InN) is a low bandgap, high electron mobility semiconductor material of interest to optoelectronics and telecommunication. Such applications require the deposition of uniform crystalline InN thin films on large area substrates, with deposition temperatures compatible with this temperature-sensitive material. As conventional chemical vapor deposition (CVD) struggles with the low temperature tolerated by the InN crystal, the authors hypothesize that a time-resolved, surface-controlled CVD route could offer a way forward for InN thin film deposition. In this work, the authors report atomic layer deposition of crystalline, wurtzite InN thin films using trimethylindium and ammonia plasma on Si(100). They found a narrow atomic layer deposition window of 240-260 degrees C with a deposition rate of 0.36 A/cycle and that the flow of ammonia into the plasma is an important parameter for the crystalline quality of the film. X-ray diffraction measurements further confirmed the polycrystalline nature of InN thin films. X-ray photoelectron spectroscopy measurements show nearly stoichiometric InN with low carbon level (amp;lt;1 at. %) and oxygen level (amp;lt;5 at. %) in the film bulk. The low carbon level is attributed to a favorable surface chemistry enabled by the NH3 plasma. The film bulk oxygen content is attributed to oxidation upon exposure to air via grain boundary diffusion and possibly by formation of oxygen containing species in the plasma discharge. Published by the AVS.

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  • 28.
    Edström, Daniel
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten. Orebro Univ, Sweden.
    Sangiovanni, Davide Giuseppe
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Teoretisk Fysik. Linköpings universitet, Tekniska fakulteten. Ruhr Univ Bochum, Germany.
    Landälv, Ludvig
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten. Sandvik Coromant AB, Sweden.
    Eklund, Per
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Greene, Joseph E
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten. Univ Illinois, IL 61801 USA; Univ Illinois, IL 61801 USA; Natl Taiwan Univ Sci and Technol, Taiwan.
    Petrov, Ivan
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten. Univ Illinois, IL 61801 USA; Univ Illinois, IL 61801 USA.
    Hultman, Lars
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Chirita, Valeriu
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Mechanical properties of VMoNO as a function of oxygen concentration: Toward development of hard and tough refractory oxynitrides2019Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, ISSN 0734-2101, E-ISSN 1520-8559, Vol. 37, nr 6, artikel-id 061508Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Improved toughness is a central goal in the development of wear-resistant refractory ceramic coatings. Extensive theoretical and experimental research has revealed that NaCl-structure VMoN alloys exhibit surprisingly high ductility combined with high hardness and toughness. However, during operation, protective coatings inevitably oxidize, a problem that may compromise material properties and performance. Here, the authors explore the role of oxidation in altering VMoN properties. Density functional theory and theoretical intrinsic hardness models are used to investigate the mechanical behavior of cubic V0.5Mo0.5N1-xOx solid solutions as a function of the oxygen concentration x. Elastic constant and intrinsic hardness calculations show that oxidation does not degrade the mechanical properties of V0.5Mo0.5N. Electronic structure analyses indicate that the presence of oxygen reduces the covalent bond character, which slightly lowers the alloy strength and intrinsic hardness. Nevertheless, the character of metallic d-d states, which are crucial for allowing plastic deformation and enhancing toughness, remains unaffected. Overall, the authors results suggest that VMoNO oxynitrides, with oxygen concentrations as high as 50%, possess high intrinsic hardness, while still being ductile. Published by the AVS.

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  • 29.
    Edström, Daniel
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Sangiovanni, Davide
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Teoretisk Fysik. Linköpings universitet, Tekniska fakulteten.
    Hultman, Lars
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Petrov, Ivan
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten. University of Illinois, IL 61801 USA; University of Illinois, IL 61801 USA.
    Greene, Joseph E
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten. University of Illinois, USA.
    Chirita, Valeriu
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Large-scale molecular dynamics simulations of TiN/TiN(001) epitaxial film growth2016Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, ISSN 0734-2101, E-ISSN 1520-8559, Vol. 34, nr 4, s. 041509-1-041509-9Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Large-scale classical molecular dynamics simulations of epitaxial TiN/TiN(001) thin film growth at 1200K are carried out using incident flux ratios N/Ti -1, 2, and 4. The films are analyzed as a function of composition, island size distribution, island edge orientation, and vacancy formation. Results show that N/Ti-1 films are globally understoichiometric with dispersed Ti-rich surface regions which serve as traps to nucleate 111-oriented islands, leading to local epitaxial breakdown. Films grown with N/Ti=2 are approximately stoichiometric and the growth mode is closer to layer-by-layer, while N/Ti-4 films are stoichiometric with N-rich surfaces. As N/Ti is increased from 1 to 4, island edges are increasingly polar, i. e., 110-oriented, and N-terminated to accommodate the excess N flux, some of which is lost by reflection of incident N atoms. N vacancies are produced in the surface layer during film deposition with N/Ti-1 due to the formation and subsequent desorption of N-2 molecules composed of a N adatom and a N surface atom, as well as itinerant Ti adatoms pulling up N surface atoms. The N vacancy concentration is significantly reduced as N/Ti is increased to 2; with N/Ti-4, Ti vacancies dominate. Overall, our results show that an insufficient N/Ti ratio leads to surface roughening via nucleation of small dispersed 111 islands, whereas high N/Ti ratios result in surface roughening due to more rapid upper-layer nucleation and mound formation. The growth mode of N/Ti-2 films, which have smoother surfaces, is closer to layer-by-layer. (C) 2016 American Vacuum Society.

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  • 30.
    Eklund, Per
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
    Beckers, Manfred
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
    Frodelius, Jenny
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
    Högberg, Hans
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
    Hultman, Lars
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
    Magnetron sputtering of Ti3SiC2 thin films from a Ti3SiC2 compound target2007Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, ISSN 0734-2101, E-ISSN 1520-8559, Vol. 25, nr 5, s. 1381-1388Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Ti3 Si C2 thin films were synthesized by magnetron sputtering from Ti3 Si C2 and Ti targets. Sputtering from a Ti3 Si C2 target alone resulted in films with a C content of ∼50 at. % or more, due to gas-phase scattering processes and differences in angular and energy distributions between species ejected from the target. Addition of Ti to the deposition flux from a Ti3 Si C2 target is shown to bind the excess C in Ti Cx intergrown with Ti3 Si C2 and Ti4 Si C3. Additionally, a substoichiometric Ti Cx buffer layer is shown to serve as a C sink and enable the growth of Ti3 Si C2.

  • 31. Elisabeth, Abom A.
    et al.
    Hultman, Lars
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik.
    Eriksson, Mats
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Tillämpad Fysik.
    Twesten, R.D.
    Center for Microanalysis of Materials, Seitz Materials Research Laboratory, University of Illinois, Urbana, IL 618 01, United States.
    Properties of combined TiN and Pt thin films applied to gas sensing2002Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, ISSN 0734-2101, E-ISSN 1520-8559, Vol. 20, nr 3, s. 667-673Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    The effect of Pt in the proximity of TiN with respect to the oxidation behavior was addressed. TiN was grown at two different temperatures that are known to produce films with varying porosity. Pt was used as the catalytic metal and either deposited on top of the TiN film grown at 400°C or co-sputtered in a reactive atmosphere of Ar and N2 at the two different deposition temperatures. The films were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), atomic force microscopy (AFM), x-ray diffraction, Auger electron spectroscopy (AES), and x-ray photoemission spectroscopy (XPS), and the gas response of the sensor to hydrogen, ammonia, propene, and acetaldehyde was measured. Aging studies were also carried out for a period of one month. Overall, significant results were obtained.

  • 32.
    Fager, Hanna
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
    Andersson, J.M.
    Seco Tools AB, SE-737 82 Fagersta, Sweden.
    Jensen, Jens
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
    Lu, Jun
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
    Hultman, Lars
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
    Thermal stability and mechanical properties of amorphous arc evaporated Ti-B-Si-N and Ti-B-Si-Al-N coatings grown by cathodic arc evaporation from TiB2, Ti33Al67, and Ti85Si15 cathodes2014Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, ISSN 0734-2101, E-ISSN 1520-8559, Vol. 32, nr 6, s. 061508-Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Ti-B-Al-N, Ti-B-Si-N, and Ti-B-Si-Al-N coatings were grown on cemented carbide substrates in an industrial scale cathodic arc evaporation system using Ti33Al67, Ti85Si15, and TiB2 cathodes in a reactiveN2 atmosphere. The microstructure of the as-deposited coatings changes from nanocrystalline to amorphous with addition of (B+Si+Al), or high amounts of (B+Si) to TiN. In the as-deposited state, the 4 μm-thick amorphous coatings are dense and homogenous, besides slight compositional modulation with Ti-rich layers induced by rotation of the substrate holder fixture during deposition, and have unusually few macroparticles. Annealing at temperatures ranging from 700 °C to 1100 °C results in that the coatings crystallize by clustering of TiN grains. The hardness of as-deposited amorphous coatings is 17-18 GPa, and increases to 21 GPa following annealing at 800 °C. At annealing temperatures of 1000 °C and above the hardness decreases due to inter-diffusion of Co from the substrate to the coating.

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  • 33.
    Fager, Hanna
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Howe, Brandon M.
    US Air Force, OH 45433 USA.
    Greczynski, Grzegorz
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Jensen, Jens
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Mei, A. B.
    University of Illinois, IL 61801 USA; University of Illinois, IL 61801 USA.
    Lu, Jun
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Hultman, Lars
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Greene, Joseph E
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten. University of Illinois, IL 61801 USA; University of Illinois, IL 61801 USA.
    Petrov, Ivan
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten. University of Illinois, IL 61801 USA; University of Illinois, IL 61801 USA.
    Novel hard, tough HfAlSiN multilayers, defined by alternating Si bond structure, deposited using modulated high-flux, low-energy ion irradiation of the growing film2015Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, ISSN 0734-2101, E-ISSN 1520-8559, Vol. 33, nr 5, s. 05E103-1-05E103-9Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Hf1-x-yAlxSiyN (0 less than= x less than= 0.14, 0 less than= y less than= 0.12) single layer and multilayer films are grown on Si(001) at 250 degrees C using ultrahigh vacuum magnetically unbalanced reactive magnetron sputtering from a single Hf0.6Al0.2Si0.2 target in mixed 5%-N-2/Ar atmospheres at a total pressure of 20 mTorr (2.67 Pa). The composition and nanostructure of Hf1-x-yAlxSiyN films are controlled by varying the energy Ei of the ions incident at the film growth surface while maintaining the ion-to-metal flux ratio constant at eight. Switching E-i between 10 and 40 eV allows the growth of Hf0.78Al0.10Si0.12N/Hf0.78Al0.14Si0.08N multilayers with similar layer compositions, but in which the Si bonding state changes from predominantly Si-Si/Si-Hf for films grown with E-i = 10 eV, to primarily Si-N with E-i = 40 eV. Multilayer hardness values, which vary inversely with bilayer period Lambda, range from 20 GPa with Lambda = 20 nm to 27 GPa with Lambda = 2 nm, while fracture toughness increases directly with Lambda. Multilayers with Lambda = 10nm combine relatively high hardness, H similar to 24GPa, with good fracture toughness. (C) 2015 American Vacuum Society.

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  • 34.
    Fiantok, Tomas
    et al.
    Comenius Univ, Slovakia; Comenius Univ, Slovakia.
    Sroba, Viktor
    Comenius Univ, Slovakia.
    Koutna, Nikola
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Izai, Vitalii
    Comenius Univ, Slovakia.
    Roch, Tomas
    Comenius Univ, Slovakia.
    Truchly, Martin
    Comenius Univ, Slovakia.
    Vidis, Marek
    Comenius Univ, Slovakia.
    Satrapinskyy, Leonid
    Comenius Univ, Slovakia.
    Nagy, Stefan
    Inst Mat & Machine Mech SAS, Slovakia.
    Grancic, Branislav
    Comenius Univ, Slovakia.
    Kus, Peter
    Comenius Univ, Slovakia.
    Mikula, Marian
    Comenius Univ, Slovakia; Inst Mat & Machine Mech SAS, Slovakia.
    Structure evolution and mechanical properties of co-sputtered Zr-Al-B-2 thin films2022Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, ISSN 0734-2101, E-ISSN 1520-8559, Vol. 40, nr 3, artikel-id 033414Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Zirconium diboride (ZrB2) represents a promising hard coating material for demanding high-temperature applications and could provide an excellent basis for fine-tuning mechanical properties via the concept of alloying. Here, combining density functional theory and experiments, we investigate the effect of aluminum alloying on thermally induced structure evolution and mechanical properties of alpha-structured Zr1-xAlxB2+Delta. Ab initio calculations predict a strong tendency for spinodal phase separation of hexagonal Zr1-xAlxB2 solid solution into isostructural binaries. Experimental results confirm predictions of the insolubility of aluminum in the ZrB2 phase when the structure of magnetron co-sputtered Zr0.72Al0.28B2.64 films with an aluminum content of 8 at. % has a nanocomposite character consisting of hexagonal alpha-ZrB2 nanocolumns surrounded by an amorphous Al-rich tissue phase. The films are structurally stable up to 1100 degrees C but out-diffusion of Al atoms from boundary regions during annealing was observed. Al alloying causes a significant decrease in hardness when the hardness of the reference as-deposited ZrB2.2 and Zr0.72Al0.28B2.64 is 39 and 23 GPa, respectively. Low hardening effect in ternaries was observed after annealing at 1000 degrees C when the hardness increased from 23.5 to 26.5 GPa due to the locally increased concentration of point defects at the boundaries of the nanocolumns and Al-rich tissue phases. Youngs modulus decrease from 445 (ZrB2.2) to 345 GPa (Zr0.72Al0.28B2.64) indicates a change in the mechanical response of the ternary film toward more ductile behavior.

  • 35.
    Forsén, Rikard
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Nanostrukturerade material. Linköpings universitet, Tekniska högskolan.
    Johansson, Mats
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Nanostrukturerade material. Linköpings universitet, Tekniska högskolan.
    Odén, Magnus
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Nanostrukturerade material. Linköpings universitet, Tekniska högskolan.
    Ghafoor, Naureen
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
    Decomposition and phase transformation in TiCrAlN thin coatings2012Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, ISSN 0734-2101, E-ISSN 1520-8559, Vol. 30, nr 6Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Phase transformations and mechanisms that yield enhanced high temperature mechanical properties of metastable solid solutions of cubic (c)-(TixCryAlz)N coatings are discussed in this paper. Coatings grown by reactive arc evaporation technique with metal composition range y<17 at. % and 45<z<62 at. % are studied and compared with the parent TiAlN material system. The coatings exhibit age hardening up to 1000 ºC which is higher compared to what is observed for TiAlN. In addition, the coatings show a less pronounced hardness decrease when hexagonal (h)-AlN is formed compared to TiAlN. The improved thermal stability is discussed in terms of a lowered coherency stress and a lowered enthalpy of mixing due to the addition of Cr, which results in improved functionality in the working temperature range of 850-1000 ºC of for example cutting tools. Upon annealing up to 1400 ºC the coatings decompose into c-TiN, bcc-Cr and h-AlN. The decomposition takes place via several intermediate phases, c-CrAlN, c-TiCrN and hexagonal (β)-Cr2N. The microstructure  evolution investigated at different stages of spinodal decomposition and phase transformation is correlated to the thermal response and mechanical hardness of the coatings.

  • 36.
    Gangaprasad Rao, Smita
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Illgner, Pascal Manuel
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Boyd, Robert
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Plasma och ytbeläggningsfysik. Linköpings universitet, Tekniska fakulteten.
    Nagy, Gyula
    Uppsala Univ, Sweden.
    Djemia, Philippe
    Univ Sorbonne Paris Nord, France.
    Primetzhofer, Daniel
    Uppsala Univ, Sweden.
    Petrov, Ivan
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten. Univ Illinois, IL 61801 USA.
    Le Febvrier, Arnaud
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Eklund, Per
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Low temperature epitaxial growth of Cantor-nitride thin films by magnetic field assisted magnetron sputtering2023Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, ISSN 0734-2101, E-ISSN 1520-8559, Vol. 41, nr 5, artikel-id 053415Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Low-temperature epitaxial growth of multicomponent alloy-based thin films remains an outstanding challenge in materials science and is important for established fundamental properties of these complex materials. Here, Cantor nitride (CrMnFeCoNi)N thin films were epitaxially grown on MgO(100) substrates at low deposition temperature by magnetic-field-assisted dc-magnetron sputtering, a technique where a magnetic field is applied to steer the dense plasma to the substrate thereby influencing the flux of Ar-ions bombarding the film during growth. Without ion bombardment, the film displayed textured growth. As the ion flux was increased, the films exhibited epitaxial growth. The epitaxial relationship between film and substrate was found to be cube on cube (001)film parallel to(001)MgO, [100]film parallel to[100]MgO. The epitaxy was retained up to a thickness of approximately similar to 100 nm after which the growth becomes textured with a 002 out-of-plane orientation. The elastic constants determined by Brillouin inelastic light scattering were found to be C-11 = 320 GPa, C-12 = 125 GPa, and C-44 = 66 GPa, from which the polycrystalline Youngs modulus was calculated as 204 GPa and Poissons ratio = 0.32, whereas available elastic properties still remained very scarce. (c) 2023 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).

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  • 37.
    Gontad, Francisco
    et al.
    University of Salento, Italy.
    Lorusso, Antonella
    University of Salento, Italy.
    Di Giulio, Massimo
    University of Salento, Italy.
    Eriksson, Fredrik
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Broitman, Esteban
    Linköpings universitet, Institutionen för fysik, kemi och biologi. Linköpings universitet, Tekniska fakulteten.
    Perrone, Alessio
    University of Salento, Italy.
    Growth of lead thin films on silicon and niobium substrates by sputtering technique2017Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, ISSN 0734-2101, E-ISSN 1520-8559, Vol. 35, nr 3, artikel-id 031502Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    In this paper, the authors report the growth of Pb thin films on both Si and Nb substrates by radio-frequency sputtering technique. Deposited films were characterized and tested to deduce the structure, the morphology, the nanomechanical properties, and also the quantum efficiency. Granular structures and large presence of voids were observed by scanning electron microscopy; moreover, the roughness and grain size of the film surface, investigated by surface probe microscopy, increased with the film thickness. Crystallographic orientation, studied by x-ray diffraction, showed the growth of polycrystalline Pb thin films and the presence of weak diffraction peaks related to penta-lead oxide (Pb5O8). The nanomechanical analysis reveals a film hardness with a value (similar to 1.5GPa) well beyond the hardness of Pb bulk (0.04GPa). Finally, twin Pb thin films deposited on Nb substrates were tested as photocathodes showing its great potentiality to be used in superconducting radio-frequency guns with a quantum efficiency of 5 x 10(-5). (C) 2017 American Vacuum Society.

  • 38.
    Gontad, Francisco
    et al.
    University of Salento, Italy; Ist Nazl Fis Nucl, Italy.
    Lorusso, Antonella
    University of Salento, Italy; Ist Nazl Fis Nucl, Italy.
    Klini, Argyro
    Fdn Research and Technology Hellas FORTH, Greece.
    Broitman, Esteban
    Linköpings universitet, Institutionen för fysik, kemi och biologi. Linköpings universitet, Tekniska fakulteten.
    Perrone, Alessio
    University of Salento, Italy; Ist Nazl Fis Nucl, Italy.
    Fotakis, Costas
    Fdn Research and Technology Hellas FORTH, Greece.
    Fabrication of Nb/Pb structures through ultrashort pulsed laser deposition2016Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, ISSN 0734-2101, E-ISSN 1520-8559, Vol. 34, nr 4, artikel-id 041501Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    This work reports the fabrication of Nb/Pb structures with an application as photocathode devices. The use of relatively low energy densities for the ablation of Nb with ultrashort pulses favors the reduction of droplets during the growth of the film. However, the use of laser fluences in this ablation regime results in a consequent reduction in the average deposition rate. On the other hand, despite the low deposition rate, the films present a superior adherence to the substrate and an excellent coverage of the irregular substrate surface, avoiding the appearance of voids or discontinuities on the film surface. Moreover, the low energy densities used for the ablation favor the growth of nanocrystalline films with a similar crystalline structure to the bulk material. Therefore, the use of low ablation energy densities with ultrashort pulses for the deposition of the Nb thin films allows the growth of very adherent and nanocrystalline films with adequate properties for the fabrication of Nb/Pb structures to be included in superconducting radiofrequency cavities. (C) 2016 American Vacuum Society.

  • 39.
    Gorishnyy, T.Z.
    et al.
    Department of Mechanical Engineering, University of Nebraska-Lincoln, Lincoln, NE 68588, United States.
    Olson, L.G.
    Department of Mechanical Engineering, University of Nebraska-Lincoln, Lincoln, NE 68588, United States.
    Oden, Magnus
    Linköpings universitet, Institutionen för konstruktions- och produktionsteknik. Linköpings universitet, Tekniska högskolan.
    Aouadi, S.M.
    Department of Physics, Southern Illinois University, Carbondale, IL 62901-4401, United States.
    Rohde, S.L.
    Department of Mechanical Engineering, University of Nebraska-Lincoln, Lincoln, NE 68588, United States.
    Optimization of wear-resistant coating architectures using finite element analysis2003Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, ISSN 0734-2101, E-ISSN 1520-8559, Vol. 21, nr 1, s. 332-339Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    The design of successful wear-resistant coating architectures requires simultaneous consideration of several factors. In particular, coatings which consist of CrN layers of varying thickness separated by thin Cr layers have the highest wear resistance for both aluminum and steel substrate materials, but a methodology was needed to optimize both the overall coating design and the individual layer thicknesses. This paper provides an initial step toward the development of future application specific coating designs and improved coating design methodologies.

  • 40.
    Greczynski, Grzegorz
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
    Lu, Jun
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
    Bolz, Stephan
    CemeCon AG, Wűrselen, Germany.
    Koelker, Werner
    CemeCon AG, Wűrselen, Germany.
    Schiffers, Christoph
    CemeCon AG, Wűrselen, Germany.
    Lemmer, Oliver
    CemeCon AG, Wűrselen, Germany.
    Petrov, Ivan
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan. University of Illinois, Urbana, USA .
    Greene, Joseph E
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan. University of Illinois, Urbana, USA .
    Hultman, Lars
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
    Novel strategy for low-temperature, high-rate growth of dense, hard, and stress-free refractory ceramic thin films2014Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, ISSN 0734-2101, E-ISSN 1520-8559, Vol. 32, nr 4, s. 041515-Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Growth of fully dense refractory thin films by means of physical vapor deposition (PVD) requires elevated temperatures T-s to ensure sufficient adatom mobilities. Films grown with no external heating are underdense, as demonstrated by the open voids visible in cross-sectional transmission electron microscopy images and by x-ray reflectivity results; thus, the layers exhibit low nanoindentation hardness and elastic modulus values. Ion bombardment of the growing film surface is often used to enhance densification; however, the required ion energies typically extract a steep price in the form of residual rare-gas-ion-induced compressive stress. Here, the authors propose a PVD strategy for the growth of dense, hard, and stress-free refractory thin films at low temperatures; that is, with no external heating. The authors use TiN as a model ceramic materials system and employ hybrid high-power pulsed and dc magnetron co-sputtering (HIPIMS and DCMS) in Ar/N-2 mixtures to grow dilute Ti1-xTaxN alloys on Si(001) substrates. The Ta target driven by HIPIMS serves as a pulsed source of energetic Ta+/Ta2+ metal-ions, characterized by in-situ mass and energy spectroscopy, while the Ti target operates in DCMS mode (Ta-HIPIMS/Ti-DCMS) providing a continuous flux of metal atoms to sustain a high deposition rate. Substrate bias V-s is applied in synchronous with the Ta-ion portion of each HIPIMS pulse in order to provide film densification by heavy-ion irradiation (m(Ta) = 180.95 amu versus m(Ti) = 47.88 amu) while minimizing Ar+ bombardment and subsequent trapping in interstitial sites. Since Ta is a film constituent, primarily residing on cation sublattice sites, film stress remains low. Dense Ti0.92Ta0.08N alloy films, 1.8 mu m thick, grown with T-s less than= 120 degrees C (due to plasma heating) and synchronized bias, V-s = 160 V, exhibit nanoindentation hardness H = 25.9 GPa and elastic modulus E = 497 GPa compared to 13.8 and 318 GPa for underdense Ti-HIPIMS/Ti-DCMS TiN reference layers (T-s less than 120 degrees C) grown with the same V-s, and 7.8 and 248 GPa for DCMS TiN films grown with no applied bias (T-s less than 120 degrees C). Ti0.92Ta0.08N residual stress is low, sigma = -0.7 GPa, and essentially equal to that of Ti-HIPIMS/Ti-DCMS TiN films grown with the same substrate bias.

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  • 41.
    Greczynski, Grzegorz
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
    Lu, Jun
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
    Jensen, Jens
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
    Petrov, Ivan
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
    Greene, Joseph E.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
    Bolz, Stephan
    CemeCon AG, Germany .
    Koelker, Werner
    CemeCon AG, Germany .
    Schiffers, Christoph
    CemeCon AG, Germany .
    Lemmer, Oliver
    CemeCon AG, Germany .
    Hultman, Lars
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
    Metal versus rare-gas ion irradiation during Ti1-xAlxN film growth by hybrid high power pulsed magnetron/dc magnetron co-sputtering using synchronized pulsed substrate bias2012Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, ISSN 0734-2101, E-ISSN 1520-8559, Vol. 30, nr 6Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Metastable NaCl-structure Ti1-xAlxN is employed as a model system to probe the effects of metal versus rare-gas ion irradiation during film growth using reactive high-power pulsed magnetron sputtering (HIPIMS) of Al and dc magnetron sputtering of Ti. The alloy film composition is chosen to be x = 0.61, near the kinetic solubility limit at the growth temperature of 500 degrees C. Three sets of experiments are carried out: a -60V substrate bias is applied either continuously, in synchronous with the full HIPIMS pulse, or in synchronous only with the metal-rich-plasma portion of the HIPIMS pulse. Alloy films grown under continuous dc bias exhibit a thickness-invariant small-grain, two-phase nanostructure (wurtzite AlN and cubic Ti1-xAlxN) with random orientation, due primarily to intense Ar+ irradiation leading to Ar incorporation (0.2 at. %), high compressive stress (-4.6 GPa), and material loss by resputtering. Synchronizing the bias with the full HIPIMS pulse results in films that exhibit much lower stress levels (-1.8GPa) with no measureable Ar incorporation, larger grains elongated in the growth direction, a very small volume fraction of wurtzite AlN, and random orientation. By synchronizing the bias with the metal-plasma phase of the HIPIMS pulses, energetic Ar+ ion bombardment is greatly reduced in favor of irradiation predominantly by Al+ ions. The resulting films are single phase with a dense competitive columnar structure, strong 111 orientation, no measureable trapped Ar concentration, and even lower stress (-0.9 GPa). Thus, switching from Ar+ to Al+ bombardment, while maintaining the same integrated incident ion/metal ratio, eliminates phase separation, minimizes renucleation during growth, and reduces the high concentration of residual point defects, which give rise to compressive stress.

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  • 42.
    Greczynski, Grzegorz
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Petrov, Ivan
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Greene, Joseph E
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Hultman, Lars
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Al capping layers for non-destructive x-ray photoelectron spectroscopy analyses of transition-metal nitride thin films2015Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, ISSN 0734-2101, E-ISSN 1520-8559, Vol. 33, s. 05E101-1-05E101-9, artikel-id 05E101Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    X-ray photoelectron spectroscopy (XPS) compositional analyses of materials that have been air exposed typically require ion etching in order to remove contaminated surface layers. However, the etching step can lead to changes in sample surface and near-surface compositions due to preferential elemental sputter ejection and forward recoil implantation; this is a particular problem for metal/gas compounds and alloys such as nitrides and oxides. Here, we use TiN as a model system and compare XPS analysis results from three sets of polycrystalline TiN/Si(001) films deposited by reactive magnetron sputtering in a separate vacuum chamber. The films are either (a) air-exposed for ? 10 min prior to insertion into the ultra-high-vacuum (UHV) XPS system; (b) air-exposed and subject to ion etching, using different ion energies and beam incidence angles, in the XPS chamber prior to analysis; or (c) Al-capped in-situ in the deposition system prior to air-exposure and loading into the XPS instrument.We show that thin, 1.5-6.0 nm, Al capping layers provide effective barriers to oxidation and contamination of TiN surfaces, thus allowing non-destructive acquisition of high-resolution core-level spectra representative of clean samples, and, hence, correct bonding assignments. The Ti 2p and N 1s satellite features, which are sensitive to ion bombardment, exhibit high intensities comparable to those obtained from single-crystal TiN/MgO(001) films grown and analyzed in-situ in a UHV XPS system and there is no indication of Al/TiN interfacial reactions. XPS-determined N/Ti concentrations acquired from Al/TiN samples agree very well with Rutherford backscattering and elastic recoil analysis results while ion-etched air-exposed samples exhibit strong N loss due to preferential resputtering. The intensities and shapes of the Ti 2p and N 1s core level signals from Al/TiN/Si(001) samples do not change following long-term (up to 70 days) exposure to ambient conditions indicating that the thin Al capping layers provide stable surface passivation without spallation.

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  • 43.
    Greczynski, Grzegorz
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Petrov, Ivan
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten. Univ Illinois, IL 61801 USA; Univ Illinois, IL 61801 USA.
    Greene, Joseph E
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten. Univ Illinois, IL 61801 USA; Natl Taiwan Univ Sci and Technol, Taiwan.
    Hultman, Lars
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Paradigm shift in thin-film growth by magnetron sputtering: From gas-ion to metal-ion irradiation of the growing film2019Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, ISSN 0734-2101, E-ISSN 1520-8559, Vol. 37, nr 6, artikel-id 060801Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Ion refractory ceramic thin films grown at low temperatures by magnetron sputtering. However, in contrast to gas-ion bombardment, the effects of metal-ion irradiation on properties of refractory ceramic thin films have not been extensively studied due to (i) low metal-ion concentrations (a few percents) during standard direct-current magnetron sputtering (DCMS) and (ii) difficulties in separating metal-ion from gas-ion fluxes. Recently, the situation has changed dramatically, thanks to the development of highpower impulse magnetron sputtering (HiPIMS), which provides highly-ionized metal-ion plasmas. In addition, careful choice of sputtering conditions allows exploitation of gas-rarefaction effects such that the charge state, energy, and momentum of metal ions incident at the growing film surface can be tuned. This is possible via the use of pulsed substrate bias, synchronized to the metal-ion-rich portion of each HiPIMS pulse. In this review, the authors begin by summarizing the results of time-resolved mass spectrometry analyses performed at the substrate position during HiPIMS and HiPIMS/DCMS cosputtering of transition-metal (TM) targets in Ar and Ar/N-2 atmospheres. Knowledge of the temporal evolution of metal- and gas-ion fluxes is essential for precise control of the incident metal-ion energy and for minimizing the role of gas-ion irradiation. Next, the authors review results on the growth of binary, pseudobinary, and pseudoternary TM nitride alloys by metal-ion-synchronized HiPIMS. In contrast to gas ions, a fraction of which are trapped at interstitial sites, metal ions are primarily incorporated at lattice sites resulting in much lower compressive stresses. In addition, the closer mass match with the film-forming species results in more efficient momentum transfer and provides the recoil density and energy necessary to eliminate film porosity at low deposition temperatures. Several novel film-growth pathways have been demonstrated: (i) nanostructured N-doped bcc-CrN0.05 films combining properties typically associated with both metals and ceramics, (ii) fully-dense, hard, and stress-free Ti0.39Al0.61N, (iii) single-phase cubic Ti1-xSixN with the highest reported SiN concentrations, (iv) unprecedented AlN supersaturation in single-phase NaCl-structure V1-xAlxN, and (v) a dramatic increase in the hardness, due to selective heavy-metal ion bombardment during growth, of dense Ti0.92Ta0.08N films deposited with no external heating. (C) 2019 Author(s).

  • 44.
    Greczynski, Grzegorz
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Zhirkov, Igor
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Petrov, Ivan
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten. University of Illinois, IL 61801 USA; University of Illinois, IL 61801 USA.
    Greene, Joseph E
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten. University of Illinois, IL 61801 USA; University of Illinois, IL 61801 USA; University of Illinois, IL 61801 USA.
    Rosén, Johanna
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Gas rarefaction effects during high power pulsed magnetron sputtering of groups IVb and VIb transition metals in Ar2017Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, ISSN 0734-2101, E-ISSN 1520-8559, Vol. 35, nr 6, artikel-id 060601Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    The authors use energy- and time-dependent mass spectrometry to analyze the evolution of metal- and gas-ion fluxes incident at the substrate during high-power pulsed magnetron sputtering (HiPIMS) of groups IVb and VIb transition-metal (TM) targets in Ar. For all TMs, the time-and energy-integrated metal/gas-ion ratio at the substrate plane NMe+/NAr+ increases with increasing peak target current density J(T,peak) due to rarefaction. In addition, NMe+/NAr+ exhibits a strong dependence on metal/gas-atom mass ratio m(Me)/m(g) and varies from similar to 1 for Ti (m(Ti)/m(Ar) = 1.20) to similar to 100 for W (m(W)/m(Ar) = 4.60), with J(T,peak) maintained constant at 1 A/cm(2). Time-resolved ion-energy distribution functions confirm that the degree of rarefaction scales with m(Me)/m(g): for heavier TMs, the original sputtered-atom Sigmund-Thompson energy distributions are preserved long after the HiPIMS pulse, which is in distinct contrast to lighter metals for which the energy distributions collapse into a narrow thermalized peak. Hence, precise timing of synchronous substrate-bias pulses, applied in order to reduce film stress while increasing densification, is critical for metal/gas combinations with m(Me)/m(g) near unity, while with m(Me)/m(g) amp;gt;amp;gt; 1, the width of the synchronous bias pulse is essentially controlled by the metal-ion time of flight. The good agreement between results obtained in an industrial system employing 440 cm(2) cathodes and a laboratory-scale system with a 20 cm(2) target is indicative of the fundamental nature of the phenomena. 

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  • 45.
    Greczynski, Grzegorz
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Zhirkov, Igor
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Petrov, Ivan
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten. Univ Illinois, IL 61801 USA; Univ Illinois, IL 61801 USA.
    Greene, Joseph E
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten. Univ Illinois, IL 61801 USA; Univ Illinois, IL 61801 USA; Univ Illinois, IL 61801 USA.
    Rosén, Johanna
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Time evolution of ion fluxes incident at the substrate plane during reactive high-power impulse magnetron sputtering of groups IVb and VIb transition metals in Ar/N-22018Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, ISSN 0734-2101, E-ISSN 1520-8559, Vol. 36, nr 2, artikel-id 020602Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Reactive transition-metal (TM) nitride film growth employing bias-synchronized high power impulse magnetron sputtering (HiPIMS) requires a detailed knowledge of the time evolution of metal-and gas-ion fluxes incident at the substrate plane in order to precisely tune momentum transfer and, hence, provide the recoil density and energy necessary to eliminate film porosity at low deposition temperatures without introducing significant film stress. Here, the authors use energy- and time-dependent mass spectrometry to analyze the evolution of metal-and gas-ion fluxes at the substrate plane during reactive HiPIMS sputtering of groups IVb and VIb TM targets in Ar/N-2 atmospheres. The time-and energy-integrated metal/gas ion ratio NMe+/Ng+ incident at the substrate is significantly lower for group IVb TMs (ranging from 0.2 for Ti to 0.9 for Hf), due to high N-2 reactivity which results in severely reduced target sputtering rates and, hence, decreased rarefaction. In contrast, for less reactive group VIb metals, sputtering rates are similar to those in pure Ar as a result of significant gas heating and high NMe+/Ng+ ratios, ranging from 2.3 for Cr to 98.1 for W. In both sets of experiments, the peak target current density is maintained constant at 1 A/cm(2). Within each TM group, NMe+/N(g+)scales with increasing metal-ion mass. For the group-VIb elements, sputtered-atom Sigmund-Thompson energy distributions are preserved long after the HiPIMS pulse, in contradistinction to group-IVb TMs for which the energy distributions collapse into narrow thermalized peaks. For all TMs, the N+ flux dominates that of N-2(+) ions, as the molecular ions are collisionally dissociated at the target, and N+ exhibits ion energy distribution functions resembling those of metal ions. The latter result implies that both N+ and Me+ species originate from the target. High-energy Ar+ tails, assigned to ionized reflected-Ar neutrals, are observed with heavier TM targets. Published by the AVS.

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  • 46.
    Greene, Joseph E
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten. University of Illinois, IL 61801 USA; National Taiwan University of Science and Technology, Taiwan.
    Tracing the recorded history of thin-film sputter deposition: From the 1800s to 20172017Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, ISSN 0734-2101, E-ISSN 1520-8559, Vol. 35, nr 5, artikel-id 05C204Artikel, forskningsöversikt (Refereegranskat)
    Abstract [en]

    Thin films, ubiquitous in todays world, have a documented history of more than 5000 years. However, thin-film growth by sputter deposition, which required the development of vacuum pumps and electrical power in the 1600s and the 1700s, is a much more recent phenomenon. First reported in the early 1800s, sputter deposition already dominated the optical-coating market by 1880. Preferential sputtering of alloys, sputtering of liquids, multitarget sputtering, and optical spectroscopy for process characterization were all described in the 1800s. Measurements of threshold energies and yields were carried out in the late 1800s, and yields in reasonable agreement with modern data were reported in the 1930s. Roll-to-roll sputter coating on flexible substrates was introduced in the mid-1930s, and the initial demonstration of sustained self-sputtering (i.e., sputtering without gas) was performed in 1970. The term magnetron dates to 1921, and the results of the first magnetron sputtering experiments were published in the late 1930s. The earliest descriptions of a parallel-plate magnetron were provided in a patent filed in 1962, rotatable magnetrons appeared in the early 1980s, and tunable "unbalanced" magnetron sputtering was developed in 1992. Two additional forms of magnetron sputtering evolved during the 1990s, both with the goal of efficiently ionizing sputter-ejected metal atoms: ionized-magnetron sputtering and high-power impulse magnetron sputtering, with the latter now being available in several variants. Radio frequency (rf) glow discharges were reported in 1891, with the initial results from rf deposition and etching experiments published in the 1930s. Modern capacitively-coupled rf sputtering systems were developed and modeled in the early 1960s, and a patent was filed in 1975 that led to pulsed-dc and mid-frequency-ac sputtering. The purposeful synthesis of metal-oxide films goes back to at least 1907, leading to early metal-oxide and nitride sputtering experiments in 1933, although the term "reactive sputtering" was not used in the literature until 1953. The effect of target oxidation on secondary-electron yields and sputtering rates was reported in 1940. The first kinetic models of reactive sputtering appeared in the 1960s; high-rate reactive sputtering, based on partial-pressure control, was developed in the early 1980s. While abundant experimental and theoretical evidence already existed in the late 1800s to the early 1900s demonstrating that sputtering is due to momentum transfer via ion-bombardment-induced near-surface collision cascades, the concept of sputtering resulting from local "impact evaporation" continued in the literature into the 1960s. Modern sputtering theory is based upon a linear-transport model published in 1969. No less than eight Nobel Laureates in Physics and Chemistry played major roles in the evolution of modern sputter deposition. (C) 2017 Author(s).

  • 47. Grossmann, Birgit
    et al.
    Jamnig, Andreas
    Schalk, Nina
    Czettl, Christoph
    Pohler, Markus
    Mitterer, Christian
    Tailoring age hardening of Ti1-xAlxN by Ta alloying2017Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, ISSN 0734-2101, E-ISSN 1520-8559, Vol. 35, nr 060604Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    The microstructure, mechanical properties, and thermal stability of arc evaporated Ti1-x-yAlxTayN hard coatings were systematically investigated by varying the Ta content in the range of 0<y<0.231. A combination of differential scanning calorimetry and vacuum annealing up to 1500°C with subsequent x-ray diffraction analysis and nanoindentation measurements provided comprehensive insight into the microstructural evolution of the coatings and the resulting impact on their mechanical properties. With the addition of Ta to the metastable Ti1-xAlxN solid solution, spinodal decomposition and wurtzite phase formation are shifted to higher temperatures. Consequently,the temperature range where Ta-alloyed coatings maintain their hardness is extended up to 1000°C.

  • 48.
    Gudmundsson, J. T.
    et al.
    University of Michigan.
    Brenning, N.
    KTH.
    Lundin, Daniel
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Plasma och beläggningsfysik. Linköpings universitet, Tekniska högskolan.
    Helmersson, Ulf
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Plasma och beläggningsfysik. Linköpings universitet, Tekniska högskolan.
    High power impulse magnetron sputtering discharge2012Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, ISSN 0734-2101, E-ISSN 1520-8559, Vol. 30, nr 030801Artikel, forskningsöversikt (Refereegranskat)
    Abstract [en]

    The high power impulse magnetron sputtering (HiPIMS) discharge is a recent addition to plasma based sputtering technology. In HiPIMS, high power is applied to the magnetron target in unipolar pulses at low duty cycle and low repetition frequency while keeping the average power about 2 orders of magnitude lower than the peak power. This results in a high plasma density, and high ionization fraction of the sputtered vapor, which allows better control of the film growth by controlling the energy and direction of the deposition species. This is a significant advantage over conventional dc magnetron sputtering where the sputtered vapor consists mainly of neutral species. The HiPIMS discharge is now an established ionized physical vapor deposition technique, which is easily scalable and has been successfully introduced into various industrial applications. The authors give an overview of the development of the HiPIMS discharge, and the underlying mechanisms that dictate the discharge properties. First, an introduction to the magnetron sputtering discharge and its various configurations and modifications is given. Then the development and properties of the high power pulsed power supply are discussed, followed by an overview of the measured plasma parameters in the HiPIMS discharge, the electron energy and density, the ion energy, ion flux and plasma composition, and a discussion on the deposition rate. Finally, some of the models that have been developed to gain understanding of the discharge processes are reviewed, including the phenomenological material pathway model, and the ionization region model.

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  • 49.
    Hajihoseini, H.
    et al.
    Univ Twente, Netherlands.
    Brenning, N.
    KTH Royal Inst Technol, Sweden.
    Rudolph, M.
    Leibniz Inst Surface Engn IOM, Germany.
    Raadu, M. A.
    KTH Royal Inst Technol, Sweden.
    Lundin, Daniel
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Plasma och ytbeläggningsfysik. Linköpings universitet, Tekniska fakulteten.
    Fischer, Joel
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Plasma och ytbeläggningsfysik. Linköpings universitet, Tekniska fakulteten.
    Minea, T. M.
    Univ Paris Saclay, France.
    Gudmundsson, J. T.
    KTH Royal Inst Technol, Sweden; Univ Iceland, Iceland.
    Target ion and neutral spread in high power impulse magnetron sputtering2023Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, ISSN 0734-2101, E-ISSN 1520-8559, Vol. 41, nr 1, artikel-id 013002Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    In magnetron sputtering, only a fraction of the sputtered target material leaving the ionization region is directed toward the substrate. This fraction may be different for ions and neutrals of the target material as the neutrals and ions can exhibit a different spread as they travel from the target surface toward the substrate. This difference can be significant in high power impulse magnetron sputtering (HiPIMS) where a substantial fraction of the sputtered material is known to be ionized. Geometrical factors or transport parameters that account for the loss of produced film-forming species to the chamber walls are needed for experimental characterization and modeling of the magnetron sputtering discharge. Here, we experimentally determine transport parameters for ions and neutral atoms in a HiPIMS discharge with a titanium target for various magnet configurations. Transport parameters are determined to a typical substrate, with the same diameter (100 mm) as the cathode target, and located at a distance 70 mm from the target surface. As the magnet configuration and/or the discharge current are changed, the transport parameter for neutral atoms xi(tn) remains roughly the same, while transport parameters for ions xi(ti) vary greatly. Furthermore, the relative ion-to-neutral transport factors, xi(ti)/xi(tn), that describe the relative deposited fractions of target material ions and neutrals onto the substrate, are determined to be in the range from 0.4 to 1.1.

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  • 50.
    Hajihoseini, Hamidreza
    et al.
    Univ Iceland, Iceland; Univ Paris Saclay, France.
    Cada, Martin
    Acad Sci Czech Republ, Czech Republic.
    Hubicka, Zdenek
    Acad Sci Czech Republ, Czech Republic.
    Unaldi, Selen
    Univ Paris Saclay, France.
    Raadu, Michael A.
    KTH Royal Inst Technol, Sweden.
    Brenning, Nils
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Plasma och ytbeläggningsfysik. Linköpings universitet, Tekniska fakulteten. KTH Royal Inst Technol, Sweden.
    Gudmundsson, Jon Tomas
    Univ Iceland, Iceland; KTH Royal Inst Technol, Sweden.
    Lundin, Daniel
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Plasma och ytbeläggningsfysik. Linköpings universitet, Tekniska fakulteten. Univ Paris Saclay, France.
    Sideways deposition rate and ionized flux fraction in dc and high power impulse magnetron sputtering2020Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, ISSN 0734-2101, E-ISSN 1520-8559, Vol. 38, nr 3, artikel-id 033009Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    The sideways (radial) deposition rate and ionized flux fraction in a high power impulse magnetron sputtering (HiPIMS) discharge are studied and compared to a dc magnetron sputtering (dcMS) discharge, while the magnetic field strength | B | and degree of balancing are varied. A significant deposition of the film forming material perpendicular to the target surface is observed for both sputter techniques. This sideways deposition decreases with increasing axial distance from the target surface. The sideways deposition rate is always the highest in dc operation, while it is lower for HiPIMS operation. The magnetic field strength has a strong influence on the sideways deposition rate in HiPIMS but not in dcMS. Furthermore, in HiPIMS operation, the radial ion deposition rate is always at least as large as the axial ion deposition rate and often around two times higher. Thus, there are a significantly higher number of ions traveling radially in the HiPIMS discharge. A comparison of the total radial as well as axial fluxes across the entire investigated plasma volume between the target and the substrate position allows for revised estimates of radial over axial flux fractions for different magnetic field configurations. It is here found that the relative radial flux of the film forming material is greater in dcMS compared to HiPIMS for almost all cases investigated. It is therefore concluded that the commonly reported reduction of the (axial) deposition rate in HiPIMS compared to dcMS does not seem to be linked with an increase in sideways material transport in HiPIMS.

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